TWI751196B - 含金屬氮化物粒子、分散組成物、硬化性組成物、硬化膜及它們的製造方法以及彩色濾光片、固體攝影元件、固體攝像裝置、紅外線感測器 - Google Patents

含金屬氮化物粒子、分散組成物、硬化性組成物、硬化膜及它們的製造方法以及彩色濾光片、固體攝影元件、固體攝像裝置、紅外線感測器 Download PDF

Info

Publication number
TWI751196B
TWI751196B TW106131597A TW106131597A TWI751196B TW I751196 B TWI751196 B TW I751196B TW 106131597 A TW106131597 A TW 106131597A TW 106131597 A TW106131597 A TW 106131597A TW I751196 B TWI751196 B TW I751196B
Authority
TW
Taiwan
Prior art keywords
metal
atom
containing nitride
group
curable composition
Prior art date
Application number
TW106131597A
Other languages
English (en)
Chinese (zh)
Other versions
TW201815682A (zh
Inventor
浜田大輔
久保田誠
田口貴規
坂本裕貴
Original Assignee
日商富士軟片股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商富士軟片股份有限公司 filed Critical 日商富士軟片股份有限公司
Publication of TW201815682A publication Critical patent/TW201815682A/zh
Application granted granted Critical
Publication of TWI751196B publication Critical patent/TWI751196B/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
    • C01B21/0763—Preparation from titanium, zirconium or hafnium halides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F283/00—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
    • C08F283/04—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polycarbonamides, polyesteramides or polyimides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/28—Nitrogen-containing compounds
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Materials For Photolithography (AREA)
  • Optical Filters (AREA)
TW106131597A 2016-09-30 2017-09-14 含金屬氮化物粒子、分散組成物、硬化性組成物、硬化膜及它們的製造方法以及彩色濾光片、固體攝影元件、固體攝像裝置、紅外線感測器 TWI751196B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016193263 2016-09-30
JP2016-193263 2016-09-30

Publications (2)

Publication Number Publication Date
TW201815682A TW201815682A (zh) 2018-05-01
TWI751196B true TWI751196B (zh) 2022-01-01

Family

ID=61763448

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106131597A TWI751196B (zh) 2016-09-30 2017-09-14 含金屬氮化物粒子、分散組成物、硬化性組成物、硬化膜及它們的製造方法以及彩色濾光片、固體攝影元件、固體攝像裝置、紅外線感測器

Country Status (4)

Country Link
JP (2) JPWO2018061644A1 (fr)
KR (1) KR102294518B1 (fr)
TW (1) TWI751196B (fr)
WO (1) WO2018061644A1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7029546B2 (ja) * 2018-09-11 2022-03-03 富士フイルム株式会社 遮光性組成物、硬化膜、カラーフィルタ、遮光膜、固体撮像素子、画像表示装置
DE102019124713A1 (de) 2018-11-27 2020-05-28 Samsung Electronics Co., Ltd. Vorrichtungen und Verfahren zur Steuerung einer Exposition gegenüber drahtloser Kommunikation
JP2020200376A (ja) * 2019-06-07 2020-12-17 三菱ケミカル株式会社 樹脂組成物、積層フィルム、積層フィルムの製造方法及び積層フィルムの使用用途
CN113104822A (zh) * 2021-03-31 2021-07-13 攀枝花学院 氧化钛还原氮化的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0222110A (ja) * 1988-04-23 1990-01-25 Tioxide Group Plc 窒素化合物
TW200631898A (en) * 2004-12-28 2006-09-16 Ishihara Sangyo Kaisha Black-type titanium oxynitride
TW201101489A (en) * 2009-02-13 2011-01-01 Semiconductor Energy Lab Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3744188B2 (ja) * 1998-03-16 2006-02-08 住友金属鉱山株式会社 熱線遮蔽膜形成用塗布液及び熱線遮蔽膜
JP4058850B2 (ja) * 1999-08-11 2008-03-12 住友金属鉱山株式会社 日射フィルター膜形成用塗布液
JP4640961B2 (ja) * 2005-07-27 2011-03-02 株式会社日清製粉グループ本社 微粒子の製造方法および装置
JP5095939B2 (ja) * 2004-12-28 2012-12-12 石原産業株式会社 黒色系酸窒化チタン
JP5035720B2 (ja) * 2007-04-17 2012-09-26 三菱マテリアル株式会社 導電性黒色粉末の製造方法と導電性黒色膜
JP5424591B2 (ja) * 2008-07-29 2014-02-26 三菱マテリアル株式会社 黒色顔料分散液とその製造方法および用途
JP5264350B2 (ja) * 2008-07-29 2013-08-14 三菱マテリアル株式会社 黒色チタン酸窒化物粉末とその製造方法および用途
JP5099094B2 (ja) 2008-09-18 2012-12-12 東レ株式会社 黒色樹脂組成物、樹脂ブラックマトリクス、カラーフィルターおよび液晶表示装置
JP4970597B2 (ja) * 2008-10-06 2012-07-11 昭和電工株式会社 炭窒化物混合物粒子または炭窒酸化物混合物粒子の製造方法及びその用途
TWI483999B (zh) * 2009-06-15 2015-05-11 Toray Industries 黑色複合微粒子、黑色樹脂組成物、彩色濾光片基板及液晶顯示裝置
JP5747475B2 (ja) * 2010-10-29 2015-07-15 三菱マテリアル電子化成株式会社 青色遮蔽黒色粉末とその製造方法および用途
JP5618364B2 (ja) * 2010-11-04 2014-11-05 一般財団法人ファインセラミックスセンター 超微粒かつ均質なチタン系炭窒化物固溶体粉末の製造方法
JP5723699B2 (ja) * 2011-02-25 2015-05-27 富士フイルム株式会社 遮光性組成物、遮光性組成物の製造方法、ソルダレジスト、パターン形成方法、及び固体撮像素子
JP5623958B2 (ja) * 2011-03-30 2014-11-12 富士フイルム株式会社 感放射線性組成物、パターン形成方法、カラーフィルタ及びその製造方法、並びに、固体撮像素子
KR20140068852A (ko) * 2011-06-27 2014-06-09 식스포인트 머터리얼즈 인코퍼레이티드 전이금속 질화물을 함유하는 전극을 지닌 울트라커패시터
JP5798978B2 (ja) * 2012-05-17 2015-10-21 富士フイルム株式会社 着色感放射線性組成物、これを用いたカラーフィルタ
JP5986157B2 (ja) * 2013-08-27 2016-09-06 太陽インキ製造株式会社 硬化性樹脂組成物、ドライフィルム、硬化物およびプリント配線板
JP6639827B2 (ja) * 2014-08-08 2020-02-05 太陽インキ製造株式会社 硬化性樹脂組成物、ドライフィルム、硬化物およびプリント配線板
JP5941180B1 (ja) * 2015-03-20 2016-06-29 太陽インキ製造株式会社 硬化性樹脂組成物、ドライフィルム、硬化物およびプリント配線板

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0222110A (ja) * 1988-04-23 1990-01-25 Tioxide Group Plc 窒素化合物
TW200631898A (en) * 2004-12-28 2006-09-16 Ishihara Sangyo Kaisha Black-type titanium oxynitride
TW201101489A (en) * 2009-02-13 2011-01-01 Semiconductor Energy Lab Transistor, semiconductor device including the transistor, and manufacturing method of the transistor and the semiconductor device

Also Published As

Publication number Publication date
TW201815682A (zh) 2018-05-01
JPWO2018061644A1 (ja) 2019-09-05
JP7373000B2 (ja) 2023-11-01
KR102294518B1 (ko) 2021-08-27
KR20190041493A (ko) 2019-04-22
JP2022079500A (ja) 2022-05-26
WO2018061644A1 (fr) 2018-04-05

Similar Documents

Publication Publication Date Title
TWI798453B (zh) 遮光性樹脂組成物、硬化膜、濾色器、遮光膜、固體攝像元件、圖像顯示裝置
JP7373000B2 (ja) 金属窒化物含有粒子、分散組成物、硬化性組成物、硬化膜、及びそれらの製造方法、並びにカラーフィルタ、固体撮像素子、固体撮像装置、赤外線センサ
KR102202906B1 (ko) 조성물, 경화막, 컬러 필터, 고체 촬상 소자, 적외선 센서, 근적외선 센서, 및 근접 센서
JP6680907B2 (ja) 硬化性組成物、硬化膜、カラーフィルタ、遮光膜、固体撮像素子、画像表示装置、及び、硬化膜の製造方法
KR102453516B1 (ko) 경화막의 제조 방법, 고체 촬상 소자의 제조 방법
TWI774679B (zh) 硬化性組成物、硬化膜、濾色器、遮光膜、固體攝像元件、圖像顯示裝置、硬化膜的製造方法及多官能硫醇化合物
WO2020066420A1 (fr) Composition de protection contre la lumière, film durci, film de protection contre la lumière et élément d'imagerie à semi-conducteur
TWI766099B (zh) 硬化膜之製造方法、固體攝像元件之製造方法、圖像顯示裝置之製造方法
KR20210022710A (ko) 차광성 조성물, 경화막, 컬러 필터, 차광막, 광학 소자, 고체 촬상 소자, 헤드라이트 유닛
JP6727344B2 (ja) 硬化性組成物、化合物、硬化膜、硬化膜の製造方法、カラーフィルタの製造方法、固体撮像素子、赤外線センサ
TWI746819B (zh) 硬化性組成物、硬化膜、遮光膜、固體攝像元件、固體攝像裝置及硬化膜的製造方法
JP6741616B2 (ja) 収容体、収容体の製造方法、及び、硬化膜の製造方法
TW202311404A (zh) 組成物、遮光膜、固體攝像元件、圖像顯示裝置、硬化膜的製造方法