TWI747820B - 感光性樹脂組成物及蝕刻方法 - Google Patents
感光性樹脂組成物及蝕刻方法 Download PDFInfo
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- TWI747820B TWI747820B TW105110559A TW105110559A TWI747820B TW I747820 B TWI747820 B TW I747820B TW 105110559 A TW105110559 A TW 105110559A TW 105110559 A TW105110559 A TW 105110559A TW I747820 B TWI747820 B TW I747820B
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- Prior art keywords
- compound
- acid
- photosensitive resin
- resin composition
- etching
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- 238000005530 etching Methods 0.000 title claims abstract description 55
- 239000011342 resin composition Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 21
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- 229920005989 resin Polymers 0.000 claims abstract description 34
- 239000011347 resin Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 28
- -1 isocyanate compound Chemical class 0.000 claims abstract description 26
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims abstract description 23
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical class C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000012948 isocyanate Substances 0.000 claims abstract description 13
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- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 claims description 9
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 8
- 229940008841 1,6-hexamethylene diisocyanate Drugs 0.000 claims description 7
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
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Abstract
本發明為提供一種對含有高濃度之氫氟酸或氟化銨之蝕刻液的耐性優異之感光性樹脂組成物,以及利用該感光性樹脂組成物之蝕刻方法。
其係藉由含有氫氟酸或氟化銨之蝕刻液進行蝕刻處理的蝕刻方法中所使用之感光性樹脂組成物,該感光性樹脂組成物至少包含(A)酸改性環氧丙烯酸酯、(B)光聚合起始劑、(C)封端化異氰酸酯化合物、及(D)填料,以及蝕刻方法,其係於基材之至少單面形成含有該感光性樹脂組成物所成的感光性樹脂層,曝光感光性樹脂層後進行顯像,並將感光性樹脂層進行加熱之後,藉由含有氫氟酸或氟化銨的蝕刻液進行蝕刻處理。
Description
本發明係關於對含有氫氟酸或氟化銨之蝕刻液的耐性優異之感光性樹脂組成物及利用該感光性樹脂組成物之蝕刻方法。
在將玻璃基材、矽基板、鈦基板等之基材進行蝕刻時,有時會使用含有氫氟酸或氟化銨之蝕刻液。例如,作為於玻璃基材形成圖型的方法,係於玻璃基材上形成感光性樹脂組成物,接著,經由所期望之圖型的光罩來實施曝光,並使感光性樹脂組成物硬化。接著,藉由顯像來去除非曝光部(非硬化部),於玻璃基材上形成由感光性樹脂組成物所構成的抗蝕圖型。然後,可於露出的玻璃基材部吹附含有氫氟酸或氟化銨之蝕刻液來將玻璃溶解,而形成圖型。
作為使用於以如此之含有氫氟酸或氟化銨之蝕刻液進行的蝕刻處理之感光性樹脂組成物,以往係使用負型之感光性樹脂組成物。例如,作為不易從玻璃基材剝
離的光硬化性抗蝕劑材料,係揭示有一種含有側鏈具有乙烯性不飽和雙鍵之丙烯酸樹脂與聚矽烷與光增感劑的抗蝕劑材料(例如,參照專利文獻1)。又,作為與玻璃基材之密著性優異的感光性樹脂組成物,係揭示有一種含有含特定之羧基之黏合劑樹脂、光聚合性單體與起始劑、以及特定之有機矽烷化合物所成的感光性樹脂組成物(例如,參照專利文獻2)。又,作為玻璃蝕刻用之紫外線硬化型抗蝕劑組成物,係揭示有一種含有含酸基樹脂、不飽和化合物、光起始劑、烷氧基矽烷化合物、以及無機微粉末的抗蝕劑組成物(例如,參照專利文獻3)。然而,僅此等之成分,對含有氫氟酸或氟化銨之蝕刻液的耐久性並不充分,而有若浸漬於含有氫氟酸或氟化銨之蝕刻液,則抗蝕圖型會從玻璃基材上剝離的問題。
又,亦揭示一種含有鹼可溶性樹脂、具有乙烯性不飽和基之光聚合性化合物、封端化異氰酸酯化合物、以及填料的感光性樹脂組成物(例如參照專利文獻4)。然而,僅此等之成分的組合,對於如氫氟酸或氟化銨之濃度為15質量%以上般的高濃度之蝕刻液的耐久性並不充分,而有若浸漬於高濃度之蝕刻液,則有抗蝕圖型會從玻璃基材上剝離的情況。
[專利文獻1]日本特開2005-164877號公報
[專利文獻2]日本特開2007-316247號公報
[專利文獻3]日本特開2007-128052號公報
[專利文獻4]日本特開2013-117682號公報
本發明之課題為提供一種對含有高濃度之氫氟酸或氟化銨之蝕刻液的耐性優異之感光性樹脂組成物,以及利用該感光性樹脂組成物之蝕刻方法。
藉由以下手段而可解決上述課題。
(1)一種感光性樹脂組成物,其係於藉由含有氫氟酸或氟化銨之蝕刻液進行蝕刻處理的蝕刻方法中所使用之感光性樹脂組成物,其特徵為:至少包含(A)酸改性環氧丙烯酸酯、(B)光聚合起始劑、(C)封端化異氰酸酯化合物、及(D)填料。
(2)如上述(1)之感光性樹脂組成物,其中,(A)酸改性環氧丙烯酸酯係至少使環氧樹脂(a1)、由丙烯酸及甲基丙烯酸之群中選出的至少1種之化合物(a2)、以及由含羧酸化合物及含羧酸化合物之酐之群中選出的至少1種之化合物(a3)進行反應所成之化合物,環氧樹脂(a1)係雙酚A型環氧樹脂。
(3)如上述(1)或(2)之感光性樹脂組成
物,其中,(A)酸改性環氧丙烯酸酯係至少使環氧樹脂(a1)、由丙烯酸及甲基丙烯酸之群中選出的至少1種之化合物(a2)、以及由含羧酸化合物及含羧酸化合物之酐之群中選出的至少1種之化合物(a3)進行反應所成之化合物,化合物(a3)係由琥珀酸及琥珀酸酐之群中選出的至少1種。
(4)如上述(1)~(3)中任一項之感光性樹脂組成物,其中,(C)封端化異氰酸酯化合物係藉由甲基乙基酮肟所封端化的1,6-六亞甲基二異氰酸酯。
(5)如上述(1)~(4)中任一項之感光性樹脂組成物,其中,(D)填料係滑石。
(6)一種蝕刻方法,其特徵為:於基材之至少單面形成含有如上述(1)~(5)中任一項之感光性樹脂組成物所成的感光性樹脂層,將感光性樹脂層曝光後進行顯像,並將感光性樹脂層進行加熱之後,藉由含有氫氟酸或氟化銨的蝕刻液進行蝕刻處理。
本發明之感光性樹脂組成物係由於含有(A)酸改性環氧丙烯酸酯(以下,有時表記為「成分(A)」)及(B)光聚合起始劑(以下,有時表記為「成分(B)」),因此藉由曝光將硬化膜形成圖型狀。藉由實施鹼顯像,並形成抗蝕圖型之後,進行加熱處理,形成由(C)封端化異氰酸酯化合物(以下,有時表記為
「成分(C)」)中之封端化異氰酸酯基產生的異氰酸酯基與介由成分(A)中的羧基及羥基之熱交聯的強固鍵結,而大幅提昇對含有氫氟酸或氟化銨之蝕刻液的耐性。(D)填料(以下,有時表記為「成分(D)」),係使膜強固,並抑制含有氫氟酸或氟化銨之蝕刻液的浸透。
並且,本發明之感光性樹脂組成物係藉由含有成分(A)~(D),對含有氫氟酸或氟化銨之蝕刻液的耐性優異,即使在藉由如氫氟酸或氟化銨之濃度為15質量%以上般的高濃度之蝕刻液進行蝕刻的情況,也可達成不易從基材上剝離的效果。
以下,針對本發明詳細地進行說明。
本發明之感光性樹脂組成物係至少包含(A)酸改性環氧丙烯酸酯、(B)光聚合起始劑、(C)封端化異氰酸酯化合物、及(D)填料。
作為成分(A),係可列舉至少使環氧樹脂(a1)、由丙烯酸及甲基丙烯酸之群中選出的至少1種之化合物(a2)、以及由含羧酸的化合物及含羧酸的化合物之酐之群中選出的至少1種之化合物(a3)進行反應所成之化合物。此化合物,例如,藉由對環氧樹脂(a1)賦予由丙烯酸及甲基丙烯酸之群中選出的至少1種之化合物(a2),再賦予化合物(a3),而可進行合成。
作為環氧樹脂(a1)係可列舉:酚酚醛清漆
型、甲酚酚醛清漆型、雙酚A型、雙酚F型、三酚型、四酚型、酚-伸二甲苯型、環氧丙基醚型或者該等之鹵化環氧樹脂。
作為化合物(a3)之含羧酸的化合物係可使用馬來酸(Maleic Acid)、琥珀酸(Succinic Acid)、衣康酸(Itaconic Acid)、鄰苯二甲酸(Phthalic Acid)、四氫鄰苯二甲酸(Tetrahydrophthalic Acid)、六氫鄰苯二甲酸(Hexahydrophthalic Acid)、橋聯亞甲基四氫鄰苯二甲酸(Endomethylenetetrahydrophthalic Acid)、甲基橋聯亞甲基四氫鄰苯二甲酸(Methylendomethylenetetrahydrophthalic Acid)、氯菌酸(Chlorendic Acid)、甲基四氫鄰苯二甲酸(Methyltetrahydrophthalic Acid)、偏苯三甲酸(Trimellitic Acid)、苯均四酸(Pyromellitic Acid)、二苯基酮四羧酸(Benzophenonetetracarboxylic Acid)等。作為含羧酸的化合物之酸酐係可列舉上述之含羧酸的化合物之酐。
於成分(A)中,在環氧樹脂(a1)為雙酚A型的情況,或化合物(a3)為由琥珀酸及琥珀酸酐之群中選出的至少1種的情況,係會更加提昇對含有氫氟酸或氟化銨之蝕刻液的耐性。
成分(A)之酸價會對鹼顯像速度、抗蝕劑剝離速度、感光性樹脂層之柔軟度等造成影響。酸價佳為40~120mgKOH/g。此酸價為未達40mgKOH/g時,係有鹼顯像時間增長的傾向,另一方面,若超過120mgKOH/g時,則有對作為被處理體之基材的貼附變差之情況。
又,成分(A)之質量平均分子量佳為3,000~15,000。質量平均分子量為未達3,000時,係難以將硬化前之感光性樹脂組成物形成為被膜狀態。另一方面,若超過15,000時,則有對鹼顯像液之溶解性惡化的傾向。
作為成分(B)係可列舉:二苯基酮、N,N'-四甲基-4,4'-二胺基二苯基酮(米其勒酮(Michler's Ketone))、N,N'-四乙基-4,4'-二胺基二苯基酮、4-甲氧基-4'-二甲基胺基二苯基酮、2-苄基-2-二甲基胺基-1-(4-嗎啉苯基)-庚酮-1、2-甲基-1-[4-(甲硫基)苯基]-2-嗎啉-丙酮-1等之芳香族酮;2-乙基蒽醌、菲醌、2-tert-丁基蒽醌、八甲基蒽醌、1,2-苯并蒽醌、2,3-苯并蒽醌、2-苯基蒽醌、2,3-二苯基蒽醌、1-氯蒽醌、2-甲基蒽醌、1,4-萘醌、9,10-菲醌、2-甲基-1,4-萘醌、2,3-二甲基蒽醌等之醌類;安息香甲基醚、安息香乙基醚、安息香苯基醚等之安息香醚化合物;安息香、甲基安息香、乙基安息香等之安息香化合物;苄基二甲基縮酮等之苄基衍生物;2-(o-氯苯基)-4,5-二苯基咪唑二聚物、2-(o-氯苯基)-4,5-二(甲氧基苯基)咪唑二聚物、2-(o-氟苯基)-4,5-二苯基咪唑二聚物、2-(o-甲氧基苯基)-4,5-二苯基咪唑二聚物、2-(p-甲氧基苯基)-4,5-二苯基咪唑二聚物等之2,4,5-三芳基咪唑二聚物;9-苯基吖啶、1,7-雙(9,9'-吖啶基)庚烷等之吖啶衍生物;N-苯基甘胺酸、N-苯基甘胺酸衍生物、香豆素系化合物等。上述2,4,5-三芳基咪唑二聚物中之2個2,4,5-三芳基咪唑之芳基的取代基係可為相同而賦予對稱的化合物,亦可為
不同而賦予非對稱的化合物。又,亦可以二乙基噻噸酮與二甲基胺基苯甲酸之組合的方式,來組合噻噸酮系化合物與三級胺化合物。此等係可單獨或者將2種以上組合使用。
成分(C)意指異氰酸酯基被封端劑所保護的化合物,藉由使封端劑與異氰酸酯化合物之異氰酸酯基進行反應而得到。封端化異氰酸酯化合物係在常溫時為安定,但若在某種一定條件下進行加熱,則封端劑會開裂而產生異氰酸酯基的化合物。
作為封端劑係有酚、甲酚、p-乙基酚、p-tert-丁基酚等之酚系;乙醇、丁醇、乙二醇、甲基賽路蘇、苄基醇等之醇系;丙二酸二乙酯、乙醯乙酸乙酯等之活性亞甲基系;乙醯苯胺、乙醯胺等之酸醯胺系;其他醯亞胺系;胺系;咪唑系;吡唑系;脲系;胺甲酸系;亞胺系;甲醛肟、乙醛肟、丙酮肟、甲基乙基酮肟、二乙醯單肟、環己酮肟等之肟系;硫醇系;亞硫酸氫鈉、亞硫酸氫鉀等亞硫酸鹽系;內醯胺系等。就常溫保存性、交聯性而言,作為封端劑係以甲基乙基酮肟(Methyl Ethyl Ketoxime)為佳。
作為異氰酸酯化合物係可列舉:2,6-甲伸苯基二異氰酸酯、2,4-甲伸苯基二異氰酸酯、伸二甲苯二異氰酸酯、1,6-六亞甲基二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯、4,4'-亞甲基雙(環己基異氰酸酯)、三甲基己烷亞甲基二異氰酸酯、異佛酮二異氰酸酯、萘二異氰酸酯、聯
甲苯胺二異氰酸酯、離胺酸二異氰酸酯、甲基環己烷-2,4-二異氰酸酯、甲基環己烷-2,6-二異氰酸酯、1,3-(異氰酸甲酯)環己烷、二聚物酸二異氰酸酯、及此等之加合物、雙脲體、異氰脲酸酯體等之預聚物。就感光性樹脂組成物與基材之密著性及顯像性的觀點而言,作為異氰酸酯化合物係以1,6-六亞甲基二異氰酸酯為佳。
作為成分(D)係可列舉:二氧化矽、滑石、石英、鋁氧(alumina)、硫酸鋇、鈦酸鋇、黏土、碳酸鎂、碳酸鈣、氧化鋁、氫氧化鋁、氧化鈦、雲母等。此等之以雷射繞射法所得之平均粒徑D50較佳為0.01μm~20μm,更佳為0.1μm~10μm。未達0.01μm之粒徑時係難以將填料粉碎,價格會提高。又,超過20μm之粒徑時係容易發生抗蝕圖型之晃動(Wobble)。就對含有氫氟酸或氟化銨之蝕刻液的耐性之觀點而言,作為成分(D)係以滑石為佳。
於本發明之感光性樹脂組成物中係可因應需要而含有上述成分(A)~(D)以外的成分。作為如此之成分係可列舉交聯性單體、增感劑、熱聚合抑制劑、可塑劑、著色劑(染料、顏料)、光著色劑、熱著色防止劑、消泡劑、難燃劑、安定劑、密著性賦予劑、整平劑、剝離促進劑、抗氧化劑、香料、熱硬化劑、撥水劑及撥油劑等,可分別含有0.01~20質量%左右。此等之成分係可單獨1種或組合2種以上使用。
本發明之感光性樹脂組成物亦可因應需要而
含有甲醇、乙醇、n-丙醇、2-丁醇、n-己醇等之醇類;丙酮、2-庚酮等之酮類;乙酸乙酯、乙酸丁酯、乙酸-n-戊酯、硫酸甲酯、丙酸乙酯、鄰苯二甲酸二甲酯、苯甲酸乙酯等之酯類;甲苯、二甲苯、苯、乙基苯等之芳香族烴類;四氫呋喃、二乙基醚、乙二醇單甲基醚、乙二醇單乙基醚、1-甲氧基-2-丙醇等之醚類;N,N-二甲基甲醯胺、二甲基亞碸等之溶劑或者此等之混合溶劑。
於本發明之感光性樹脂組成物中,成分(A)之摻合量,佳係對於成分(A)、(B)、(C)及(D)之總量而言為35~55質量%,更佳係40~50質量%。成分(A)之摻合量為未達35質量%時,有被膜性會變差的情況。若成分(A)之摻合量為超過55質量%,則會有降低對於含有氫氟酸或氟化銨之蝕刻液的耐性的情況。
成分(B)之摻合量,佳係對於成分(A)、(B)、(C)及(D)之總量而言為0.1~10質量%,更佳係0.2~5質量%。成分(B)之摻合量為未達0.1質量%時,有光聚合性成為不充分的傾向。另一方面,若超過10質量%,則在曝光時,在感光性樹脂層之表面吸收會增大,而有感光性樹脂層內部之光交聯成為不充分的傾向。
成分(C)之摻合量,佳係對於成分(A)、(B)、(C)及(D)之總量而言為5~25質量%,更佳係10~20質量%。成分(C)之摻合量為未達5質量%時,係有加熱後之對於含有氫氟酸或氟化銨之蝕刻液的耐性會成為不充分的傾向。另一方面,若超過25質量%,
則光硬化會成為不充分,而有解析性成為不充分的傾向。
成分(D)之摻合量,佳係對於成分(A)、(B)、(C)及(D)之總量而言為20~45質量%,更佳係25~40質量%。成分(D)之摻合量為未達20質量%時,在將感光性樹脂組成物製成乾薄膜時,會有容易發生邊緣融合(edge fusion)的情況。另一方面,若超過45質量%,則有在抗蝕劑剝離後(D)成分殘留於基材中,而成為殘渣缺陷的情況。
於本發明之蝕刻方法中,首先,於基材塗佈感光性樹脂組成物,進行乾燥,而形成含有感光性樹脂組成物所成之感光性樹脂層。亦可將預先於載體薄膜形成感光性樹脂層的感光性薄膜(乾薄膜)貼合於基材。接著,實施圖型之曝光,使曝光部硬化。接著,實施鹼顯像,並去除作為抗蝕圖型不需要的部分(非曝光部),而形成僅由硬化之感光性樹脂層所構成的抗蝕圖型。作為鹼顯像液,係可使用例如碳酸鹼金屬鹽之水溶液。對鹼顯像後之抗蝕圖型實施加熱(烘烤)處理。接著,以含有氫氟酸或氟化銨之蝕刻液實施蝕刻處理。其後,可實施抗蝕劑剝離。
作為基材係可列舉:玻璃、陶瓷、氧化銀、矽、鍺、鉭、半導體基板、石英、鈦等。
實施抗蝕圖型之加熱(烘烤)處理,係為了提昇感光性樹脂層與基材之密著、提昇對於含有氫氟酸或氟化銨之蝕刻液的耐性等的目的。加熱溫度係所使用之封
端劑進行開裂之溫度以上為佳。佳為90~250℃,更佳為110~200℃。若未達90℃,則交聯反應之進行會變慢,若超過250℃,則有發生其他成分之分解的可能性。加熱時間係10~90分鐘為佳。
作為載體薄膜,係讓紫外線透過的透明薄膜為佳。例如可使用聚丙烯、聚乙烯、聚酯、聚乙烯醇等。其中,尤其是若使用聚對苯二甲酸乙二酯薄膜,則對於疊層適性、剝離適性、透光性、折射率而言為有利,又,就低價,不脆化,耐溶劑性優異,具有高拉伸強度等的優點而言,非常容易利用。載體薄膜的厚度以1~100μm為佳。
作為於基材或載體薄膜上塗佈感光性樹脂組成物後,進行乾燥形成感光性樹脂層的方法,係可利用輥塗佈、點塗佈、凹版印刷塗佈、氣刀塗佈、模具塗佈、刮棒塗佈等之方法進行。感光性樹脂層的厚度係3~150μm為佳。若未達3μm時,則有感光性樹脂層之對於基材的塗佈或從載體薄膜對於基材的轉印難以進行的情況,若超過150μm時,則有抗蝕圖型之解析性變差的情況。
以下,雖藉由實施例更詳細地說明本發明,但本發明並不限定於此實施例。
將表1~表3所示之各成分進行混合,而得到感光性樹脂組成物。另外,表1~表3中之各成分摻合量的單位係表示質量份。將所得之塗佈液,使用線棒來塗佈於聚對苯二甲酸乙二酯(PET)薄膜(商品名:R310、25μm厚,三菱樹脂公司製)上,於100℃進行8分鐘乾燥,去除溶劑成分,而於PET薄膜之單面上得到由實施例1~13、比較例1~3之感光性樹脂組成物構成的感光性樹脂層(乾燥膜厚:60μm)。
於表1~表3中,各成分係如以下所述。
(A-1)酸改性環氧丙烯酸酯KAYARAD(註冊商標)UXE-3024(商品名,日本化藥公司製,濃度65質量%、環氧樹脂(a1):複合型)
(A-2)酸改性環氧丙烯酸酯KAYARAD(註冊商標)CCR-1235(商品名,日本化藥公司製,濃度62質量%、環氧樹脂(a1):甲酚酚醛清漆型環氧樹脂)
(A-3)酸改性環氧丙烯酸酯KAYARAD(註冊商標)ZAR-1035(商品名,日本化藥公司製,濃度65質量%、環氧樹脂(a1):雙酚A型環氧樹脂)
(A-4)酸改性環氧丙烯酸酯KAYARAD(註冊商標)ZFR-1401H(商品名,日本化藥公司製,濃度62質
量%、環氧樹脂(a1):雙酚F型環氧樹脂)
(A-5)環氧樹脂(a1)為雙酚A型環氧樹脂(商品名:JER828,三菱化學公司製),化合物(a3)為琥珀酸,以環氧樹脂(a1):化合物(a3):丙烯酸之莫耳比為1:2:2進行反應所得之酸改性環氧丙烯酸酯
(A-6)環氧樹脂(a1)為雙酚A型環氧樹脂(商品名:JER828,三菱化學公司製),化合物(a3)為鄰苯二甲酸,以環氧樹脂(a1):化合物(a3):丙烯酸之莫耳比為1:2:2進行反應所得之酸改性環氧丙烯酸酯
(B-1)2-(2'-氯苯基)-4,5-二苯基咪唑二聚物
(B-2)4,4'-雙(二乙基胺基)二苯基酮
(C-1)SUMIDUR(註冊商標)BL3175(商品名,Sumika Covestro Urethane公司製,基質:1,6-六亞甲基二異氰酸酯,封端劑:甲基乙基酮肟,濃度75質量%)
(C-2)DESMODUR(註冊商標)BL1100(商品名,Sumika Covestro Urethane公司製,基質:2,6-甲伸苯基二異氰酸酯,封端劑:ε-己內醯胺)
(C-3)DESMOTHERM(註冊商標)2170(商品名,Sumika Covestro Urethane公司製,基質:4,4'-二苯基甲烷二異氰酸酯,封端劑:活性亞甲基,濃度70質量%)
(D-1)沉澱性硫酸鋇# 100(堺化學公司製)
(D-2)滑石(商品名:LMS-200,FUJI TALC工業公司製,平均粒徑5μm)
(D-3)二氧化矽(商品名:FB-3SDC,電氣化學工業公司製)
(D-4)滑石(商品名:SG95,日本TALC公司製,平均粒徑2.5μm)
(E-1)成分;將甲基丙烯酸甲酯/n-丁基丙烯酸酯/甲基丙烯酸以質量比58/15/27共聚合而成之共聚合樹脂(質量平均分子量70000)
(F-1)2,2'-雙-(4-甲基丙烯醯氧五乙氧基苯基)丙烷(商品名:BPE-500,新中村化學工業公司製)
(F-2)三羥甲基丙烷三丙烯酸酯(商品名:TMP-A,共榮社化學公司製)
接著,於厚度2mm之玻璃基材上,以100℃熱壓著上述所得之實施例1~13及比較例1~3之含有感光性樹脂組成物所成的感光性樹脂層。接著,介由光罩(線/空間=500μm/500μm),以超高壓水銀燈進行曝光。
曝光後,在室溫放置10分鐘,接著剝取PET薄膜,將1質量%之碳酸鈉水溶液以30℃,噴霧壓0.1MPa噴霧於感光性樹脂層的表面,並去除非曝光部,而進行顯像。其後,以20℃,噴霧壓0.1MPa進行水洗後,進行乾燥。然後,實施150℃、30分鐘之烘烤處理。
接著,將上述所製作之抗蝕圖型形成後的玻璃基材,浸漬於高濃度之20質量%氫氟酸水溶液(25℃)40分鐘。實施例1~13之感光性樹脂組成物,係不發生感光性樹脂層之剝離,而可完成50μm以上之深度的蝕刻。另一方面,比較例1~3之感光性樹脂組成物,係發生感光性樹脂層之剝離,而無法達成良好的蝕刻。
將實施例1~4進行比較時,成分(A)為包含使用雙酚A型環氧樹脂作為環氧樹脂(a1)所得到的酸改性環氧丙烯酸酯(A-3),成分(C)為藉由甲基乙基酮肟所封端化的1,6-六亞甲基二異氰酸酯(C-1),成分(D)為滑石(D-2)的實施例2及4,係即使進一步增長浸漬時間,而進行蝕刻至100μm以上之深度,也不會發生感光性樹脂層之剝離。
將實施例2、4、5及6進行比較時,成分(A)為包含使用雙酚A型環氧樹脂作為環氧樹脂(a1)所得到的酸改性環氧丙烯酸酯(A-3)的實施例2及4,係即使進一步增長浸漬時間,而進行蝕刻至100μm以上之深度,也不會發生感光性樹脂層之剝離。
將實施例7、8及9進行比較時,成分(C)為包含藉由甲基乙基酮肟所封端化的1,6-六亞甲基二異氰酸酯(C-1)的實施例7,係即使進一步增長浸漬時間,而進行蝕刻至100μm以上之深度,也不會發生感光性樹脂層之剝離。
將實施例7及10進行比較時,成分(A)為使用琥珀酸作為化合物(a3)所得之酸改性環氧丙烯酸酯(A-5)的實施例7,係即使進一步增長浸漬時間,而進行蝕刻至100μm以上之深度,也不會發生感光性樹脂層之剝離。
將實施例7、11、12及13進行比較時,成分(D)為滑石(D-4)的實施例7及成分(D)為滑石(D-2)的實施例12,係即使進一步增長浸漬時間,而進行蝕刻至100μm以上之深度,也不會發生感光性樹脂層之剝離。
本發明之感光性樹脂組成物係可使用作為當使用含有氫氟酸或氟化銨之蝕刻液進行加工時的抗蝕劑。
Claims (6)
- 一種蝕刻方法,其特徵為:於由玻璃、陶瓷、氧化銀、矽、鍺、鉭、半導體基板、石英、鈦所成之群所選出之材料所構成之基材之至少單面形成含有感光性樹脂組成物所成的感光性樹脂層,曝光感光性樹脂層後進行顯像,並將感光性樹脂層進行加熱之後,藉由含有氫氟酸或氟化銨的蝕刻液進行蝕刻處理的蝕刻方法,前述感光性樹脂組成物,至少包含(A)質量平均分子量為3,000~15,000之酸改性環氧丙烯酸酯、(B)光聚合起始劑、(C)封端化異氰酸酯化合物、及(D)填料。
- 如請求項1之蝕刻方法,其中,(A)酸改性環氧丙烯酸酯係至少使環氧樹脂(a1)、由丙烯酸及甲基丙烯酸之群中選出的至少1種之化合物(a2)、與由含羧酸化合物及含羧酸化合物之酐的群中選出的至少1種之化合物(a3)進行反應所成之化合物,環氧樹脂(a1)係雙酚A型環氧樹脂。
- 如請求項1之蝕刻方法,其中,(A)酸改性環氧丙烯酸酯係至少使環氧樹脂(a1)、由丙烯酸及甲基丙烯酸之群中選出的至少1種之化合物(a2)、與由含羧酸化合物及含羧酸化合物之酐的群中選出的至少1種之化合物(a3)進行反應所成之化合物,化合物(a3)係由琥珀酸及琥珀酸酐的群中選出的至少1種。
- 如請求項1之蝕刻方法,其中,(C)封端化異氰酸酯化合物係封端化的1,6-六亞甲基二異氰酸酯。
- 如請求項1之蝕刻方法,其中,(C)封端化異氰酸酯化合物係藉由甲基乙基酮肟所封端化的1,6-六亞甲基二異氰酸酯。
- 如請求項1之蝕刻方法,其中,(D)填料係滑石。
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