TWI746746B - 包含用於無空隙填充的抑制劑之用於金屬電鍍的組成物 - Google Patents

包含用於無空隙填充的抑制劑之用於金屬電鍍的組成物 Download PDF

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TWI746746B
TWI746746B TW106144836A TW106144836A TWI746746B TW I746746 B TWI746746 B TW I746746B TW 106144836 A TW106144836 A TW 106144836A TW 106144836 A TW106144836 A TW 106144836A TW I746746 B TWI746746 B TW I746746B
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Taiwan
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item
composition
patent application
scope
copper
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TW106144836A
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English (en)
Chinese (zh)
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TW201835388A (zh
Inventor
馬塞 派翠克 琴勒
迪耶特 邁爾
馬可 亞諾
亞莉珊卓 哈格
夏洛特 艾姆尼
亞歷山大 福路格
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德商巴斯夫歐洲公司
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Polyethers (AREA)
TW106144836A 2016-12-20 2017-12-20 包含用於無空隙填充的抑制劑之用於金屬電鍍的組成物 TWI746746B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
??16205553.7 2016-12-20
EP16205553 2016-12-20
EP16205553.7 2016-12-20

Publications (2)

Publication Number Publication Date
TW201835388A TW201835388A (zh) 2018-10-01
TWI746746B true TWI746746B (zh) 2021-11-21

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TW106144836A TWI746746B (zh) 2016-12-20 2017-12-20 包含用於無空隙填充的抑制劑之用於金屬電鍍的組成物

Country Status (8)

Country Link
US (1) US11926918B2 (cg-RX-API-DMAC7.html)
EP (1) EP3559317B1 (cg-RX-API-DMAC7.html)
JP (1) JP2020502370A (cg-RX-API-DMAC7.html)
KR (1) KR102457310B1 (cg-RX-API-DMAC7.html)
CN (2) CN110100048B (cg-RX-API-DMAC7.html)
IL (1) IL267332A (cg-RX-API-DMAC7.html)
TW (1) TWI746746B (cg-RX-API-DMAC7.html)
WO (1) WO2018114985A1 (cg-RX-API-DMAC7.html)

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US11384446B2 (en) * 2020-08-28 2022-07-12 Macdermid Enthone Inc. Compositions and methods for the electrodeposition of nanotwinned copper
KR102339867B1 (ko) * 2021-07-30 2021-12-16 와이엠티 주식회사 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물
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CN117795135A (zh) * 2021-08-05 2024-03-29 麦克德米德乐思公司 用于电沉积纳米孪晶铜的组合物和方法
JP2024540824A (ja) 2021-10-01 2024-11-06 ビーエーエスエフ ソシエタス・ヨーロピア ポリアミノアミド型レベリング剤を含む銅電着用組成物
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Also Published As

Publication number Publication date
IL267332A (en) 2019-08-29
WO2018114985A1 (en) 2018-06-28
KR102457310B1 (ko) 2022-10-20
CN110100048B (zh) 2022-06-21
US20190309429A1 (en) 2019-10-10
US11926918B2 (en) 2024-03-12
EP3559317B1 (en) 2025-02-12
CN115182004A (zh) 2022-10-14
CN110100048A (zh) 2019-08-06
JP2020502370A (ja) 2020-01-23
TW201835388A (zh) 2018-10-01
KR20190091360A (ko) 2019-08-05
EP3559317A1 (en) 2019-10-30

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