IL267332A - A preparation for metal coating containing a suppressant for filling without a void - Google Patents
A preparation for metal coating containing a suppressant for filling without a voidInfo
- Publication number
- IL267332A IL267332A IL267332A IL26733219A IL267332A IL 267332 A IL267332 A IL 267332A IL 267332 A IL267332 A IL 267332A IL 26733219 A IL26733219 A IL 26733219A IL 267332 A IL267332 A IL 267332A
- Authority
- IL
- Israel
- Prior art keywords
- composition
- metal plating
- suppressing agent
- void free
- free filling
- Prior art date
Links
- 239000002184 metal Substances 0.000 title 1
- 238000007747 plating Methods 0.000 title 1
- 239000011800 void material Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
- C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Polyethers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP16205553 | 2016-12-20 | ||
| PCT/EP2017/083603 WO2018114985A1 (en) | 2016-12-20 | 2017-12-19 | Composition for metal plating comprising suppressing agent for void free filling |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL267332A true IL267332A (en) | 2019-08-29 |
Family
ID=57860616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL267332A IL267332A (en) | 2016-12-20 | 2019-06-13 | A preparation for metal coating containing a suppressant for filling without a void |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US11926918B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP3559317B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2020502370A (cg-RX-API-DMAC7.html) |
| KR (1) | KR102457310B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN110100048B (cg-RX-API-DMAC7.html) |
| IL (1) | IL267332A (cg-RX-API-DMAC7.html) |
| TW (1) | TWI746746B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2018114985A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111051576B (zh) | 2017-09-04 | 2022-08-16 | 巴斯夫欧洲公司 | 用于金属电镀的包含流平剂的组合物 |
| US20190186032A1 (en) * | 2017-12-14 | 2019-06-20 | Soulbrain Co., Ltd. | Composition for cobalt plating and method for forming metal wiring using the same |
| CN111492095B (zh) * | 2017-12-20 | 2025-07-29 | 巴斯夫欧洲公司 | 包含抑制剂的锡或锡合金电镀组合物 |
| JP2021522410A (ja) | 2018-04-20 | 2021-08-30 | ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ | 抑制剤を含むスズ又はスズ合金電気メッキのための組成物 |
| CN111690958B (zh) * | 2019-03-15 | 2023-07-28 | 上海新阳半导体材料股份有限公司 | 一种锡镀液、其制备方法和应用 |
| US20220333262A1 (en) | 2019-09-27 | 2022-10-20 | Basf Se | Composition for copper bump electrodeposition comprising a leveling agent |
| CN114450438A (zh) | 2019-09-27 | 2022-05-06 | 巴斯夫欧洲公司 | 用于铜凸块电沉积的包含流平剂的组合物 |
| CN110938848B (zh) * | 2019-12-26 | 2021-05-11 | 江苏艾森半导体材料股份有限公司 | 一种用于电解沉积铜的组合物及酸铜电镀液 |
| EP4115006B1 (en) | 2020-03-06 | 2025-06-25 | Basf Se | Electroplating with a polycarboxylate ether supressor |
| CN115335434A (zh) | 2020-04-03 | 2022-11-11 | 巴斯夫欧洲公司 | 用于铜凸块电沉积的包含聚氨基酰胺型流平剂的组合物 |
| US20230178430A1 (en) * | 2020-05-08 | 2023-06-08 | Lam Research Corporation | Electroplating cobalt, nickel, and alloys thereof |
| US11280014B2 (en) * | 2020-06-05 | 2022-03-22 | Macdermid Enthone Inc. | Silver/tin electroplating bath and method of using the same |
| EP3922662A1 (en) | 2020-06-10 | 2021-12-15 | Basf Se | Polyalkanolamine |
| JP7781850B2 (ja) * | 2020-07-13 | 2025-12-08 | ビーエーエスエフ ソシエタス・ヨーロピア | コバルトシード上の銅電気メッキ用組成物 |
| US11384446B2 (en) * | 2020-08-28 | 2022-07-12 | Macdermid Enthone Inc. | Compositions and methods for the electrodeposition of nanotwinned copper |
| KR102339867B1 (ko) * | 2021-07-30 | 2021-12-16 | 와이엠티 주식회사 | 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물 |
| KR102339868B1 (ko) * | 2021-07-30 | 2021-12-16 | 와이엠티 주식회사 | 레벨링제 및 이를 포함하는 비아홀 충진을 위한 전기도금 조성물 |
| CN117795135A (zh) * | 2021-08-05 | 2024-03-29 | 麦克德米德乐思公司 | 用于电沉积纳米孪晶铜的组合物和方法 |
| JP2024540824A (ja) | 2021-10-01 | 2024-11-06 | ビーエーエスエフ ソシエタス・ヨーロピア | ポリアミノアミド型レベリング剤を含む銅電着用組成物 |
| US20230203694A1 (en) * | 2021-12-29 | 2023-06-29 | Basf Se | Alkaline composition for copper electroplating comprising a grain refiner |
| WO2024008562A1 (en) | 2022-07-07 | 2024-01-11 | Basf Se | Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition |
| EP4638837A1 (en) | 2022-12-19 | 2025-10-29 | Basf Se | A composition for copper nanotwin electrodeposition |
| WO2025026863A1 (en) | 2023-08-03 | 2025-02-06 | Basf Se | Composition for copper electroplating on a metal seed |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4093594A (en) * | 1976-08-18 | 1978-06-06 | Celanese Polymer Specialties Company | Process for preparing cathodically depositable coating compositions |
| US4146442A (en) * | 1978-05-12 | 1979-03-27 | R. O. Hull & Company, Inc. | Zinc electroplating baths and process |
| US4347108A (en) | 1981-05-29 | 1982-08-31 | Rohco, Inc. | Electrodeposition of copper, acidic copper electroplating baths and additives therefor |
| US4871429A (en) | 1981-09-11 | 1989-10-03 | Learonal, Inc | Limiting tin sludge formation in tin or tin/lead electroplating solutions |
| JP3301707B2 (ja) | 1997-01-20 | 2002-07-15 | ディップソール株式会社 | 錫−銀合金酸性電気めっき浴 |
| JP4296358B2 (ja) | 1998-01-21 | 2009-07-15 | 石原薬品株式会社 | 銀及び銀合金メッキ浴 |
| US6444110B2 (en) | 1999-05-17 | 2002-09-03 | Shipley Company, L.L.C. | Electrolytic copper plating method |
| US7628903B1 (en) | 2000-05-02 | 2009-12-08 | Ishihara Chemical Co., Ltd. | Silver and silver alloy plating bath |
| US6679983B2 (en) | 2000-10-13 | 2004-01-20 | Shipley Company, L.L.C. | Method of electrodepositing copper |
| JP2004518022A (ja) | 2000-11-03 | 2004-06-17 | ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． | 電子デバイス製造のための金属の電気化学的共析出 |
| US6881732B2 (en) * | 2002-06-13 | 2005-04-19 | Chelator Llc | Neuroprotection and cardioprotection afforded by chelators with high affinity and specificity for cations of first transition series elements |
| TWI400365B (zh) | 2004-11-12 | 2013-07-01 | Enthone | 微電子裝置上的銅電沈積 |
| KR20090096715A (ko) * | 2006-12-21 | 2009-09-14 | 바스프 에스이 | 열감응성 중합체 이염 방지제 |
| FR2911878B1 (fr) * | 2007-01-31 | 2012-11-02 | Rhodia Recherches & Tech | Procede de preparation de polyhydroxy-urethanes. |
| US20110077376A1 (en) * | 2008-05-30 | 2011-03-31 | Katsumi Tokumoto | Process for producing hydroxyalkyltriethylenediamine, and catalyst composition for the production of polyurethane resin using it |
| EP2199315B1 (en) | 2008-12-19 | 2013-12-11 | Basf Se | Composition for metal electroplating comprising leveling agent |
| WO2010115757A1 (en) * | 2009-04-07 | 2010-10-14 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| JP5722872B2 (ja) | 2009-04-07 | 2015-05-27 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 |
| WO2010115756A1 (en) | 2009-04-07 | 2010-10-14 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| WO2010115717A1 (en) * | 2009-04-07 | 2010-10-14 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| RU2539895C2 (ru) * | 2009-07-30 | 2015-01-27 | Басф Се | Композиция для нанесения металлического покрытия, содержащая подавляющий агент, для беспустотного заполнения субмикронных элементов поверхности |
| SG177685A1 (en) * | 2009-07-30 | 2012-02-28 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
| MY156200A (en) | 2009-11-27 | 2016-01-29 | Basf Se | Composition for metal electroplating comprising leveling agent |
| KR101829866B1 (ko) * | 2010-06-01 | 2018-02-20 | 바스프 에스이 | 레벨링제를 포함하는 금속 전기도금용 조성물 |
| JP5981938B2 (ja) | 2010-12-21 | 2016-08-31 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | レベリング剤を含有する金属電解めっき組成物 |
| CN102212305B (zh) * | 2011-05-03 | 2013-07-31 | 中国科学院宁波材料技术与工程研究所 | 一种改进羟烷基酰胺/聚酯粉末涂料针孔和流平性的方法 |
| KR101952568B1 (ko) * | 2011-06-01 | 2019-02-27 | 바스프 에스이 | 상호연결 피처 및 실리콘 관통 전극의 보텀-업 충전을 위한 첨가제를 포함하는 금속 전기도금 조성물 |
| DE102011116764A1 (de) * | 2011-10-22 | 2013-04-25 | Gonzalo Urrutia Desmaison | Polykationen und Derivate |
| US8980077B2 (en) | 2012-03-30 | 2015-03-17 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
| US9758885B2 (en) * | 2012-11-09 | 2017-09-12 | Basf Se | Composition for metal electroplating comprising leveling agent |
| US20150122662A1 (en) * | 2013-11-05 | 2015-05-07 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
| US10519557B2 (en) * | 2016-02-12 | 2019-12-31 | Macdermid Enthone Inc. | Leveler compositions for use in copper deposition in manufacture of microelectronics |
| WO2018073011A1 (en) | 2016-10-20 | 2018-04-26 | Basf Se | Composition for metal plating comprising suppressing agent for void free submicron feature filling |
-
2017
- 2017-12-19 CN CN201780078648.2A patent/CN110100048B/zh active Active
- 2017-12-19 CN CN202210633931.XA patent/CN115182004A/zh active Pending
- 2017-12-19 KR KR1020197020953A patent/KR102457310B1/ko active Active
- 2017-12-19 JP JP2019533638A patent/JP2020502370A/ja not_active Withdrawn
- 2017-12-19 US US16/468,467 patent/US11926918B2/en active Active
- 2017-12-19 WO PCT/EP2017/083603 patent/WO2018114985A1/en not_active Ceased
- 2017-12-19 EP EP17835664.8A patent/EP3559317B1/en active Active
- 2017-12-20 TW TW106144836A patent/TWI746746B/zh active
-
2019
- 2019-06-13 IL IL267332A patent/IL267332A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2018114985A1 (en) | 2018-06-28 |
| KR102457310B1 (ko) | 2022-10-20 |
| CN110100048B (zh) | 2022-06-21 |
| US20190309429A1 (en) | 2019-10-10 |
| US11926918B2 (en) | 2024-03-12 |
| EP3559317B1 (en) | 2025-02-12 |
| TWI746746B (zh) | 2021-11-21 |
| CN115182004A (zh) | 2022-10-14 |
| CN110100048A (zh) | 2019-08-06 |
| JP2020502370A (ja) | 2020-01-23 |
| TW201835388A (zh) | 2018-10-01 |
| KR20190091360A (ko) | 2019-08-05 |
| EP3559317A1 (en) | 2019-10-30 |
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