JP2012522900A5 - - Google Patents

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Publication number
JP2012522900A5
JP2012522900A5 JP2012503976A JP2012503976A JP2012522900A5 JP 2012522900 A5 JP2012522900 A5 JP 2012522900A5 JP 2012503976 A JP2012503976 A JP 2012503976A JP 2012503976 A JP2012503976 A JP 2012503976A JP 2012522900 A5 JP2012522900 A5 JP 2012522900A5
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JP
Japan
Prior art keywords
copper
metal
alkylene
substrate
composition according
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JP2012503976A
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English (en)
Japanese (ja)
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JP5722872B2 (ja
JP2012522900A (ja
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Priority claimed from PCT/EP2010/054281 external-priority patent/WO2010115796A1/en
Publication of JP2012522900A publication Critical patent/JP2012522900A/ja
Publication of JP2012522900A5 publication Critical patent/JP2012522900A5/ja
Application granted granted Critical
Publication of JP5722872B2 publication Critical patent/JP5722872B2/ja
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JP2012503976A 2009-04-07 2010-03-31 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物 Active JP5722872B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP09157540 2009-04-07
EP09157540.7 2009-04-07
US25632809P 2009-10-30 2009-10-30
US61/256,328 2009-10-30
PCT/EP2010/054281 WO2010115796A1 (en) 2009-04-07 2010-03-31 Composition for metal plating comprising suppressing agent for void free submicron feature filling

Publications (3)

Publication Number Publication Date
JP2012522900A JP2012522900A (ja) 2012-09-27
JP2012522900A5 true JP2012522900A5 (cg-RX-API-DMAC7.html) 2014-09-11
JP5722872B2 JP5722872B2 (ja) 2015-05-27

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ID=42935669

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JP2012503976A Active JP5722872B2 (ja) 2009-04-07 2010-03-31 サブミクロンの窪みの無ボイド充填用の抑制剤含有金属めっき組成物

Country Status (11)

Country Link
US (2) US20120018310A1 (cg-RX-API-DMAC7.html)
EP (1) EP2417285B1 (cg-RX-API-DMAC7.html)
JP (1) JP5722872B2 (cg-RX-API-DMAC7.html)
KR (1) KR101759352B1 (cg-RX-API-DMAC7.html)
CN (1) CN102365395B (cg-RX-API-DMAC7.html)
IL (1) IL215157A (cg-RX-API-DMAC7.html)
MY (1) MY156728A (cg-RX-API-DMAC7.html)
RU (1) RU2542219C2 (cg-RX-API-DMAC7.html)
SG (1) SG174393A1 (cg-RX-API-DMAC7.html)
TW (1) TWI487814B (cg-RX-API-DMAC7.html)
WO (1) WO2010115796A1 (cg-RX-API-DMAC7.html)

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TWI400365B (zh) 2004-11-12 2013-07-01 Enthone 微電子裝置上的銅電沈積
WO2010115756A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
SG177685A1 (en) 2009-07-30 2012-02-28 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
SG183821A1 (en) 2010-03-18 2012-10-30 Basf Se Composition for metal electroplating comprising leveling agent
JP5981938B2 (ja) 2010-12-21 2016-08-31 ビーエーエスエフ ソシエタス・ヨーロピアBasf Se レベリング剤を含有する金属電解めっき組成物
EP2468927A1 (en) 2010-12-21 2012-06-27 Basf Se Composition for metal electroplating comprising leveling agent
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
KR101952568B1 (ko) 2011-06-01 2019-02-27 바스프 에스이 상호연결 피처 및 실리콘 관통 전극의 보텀-업 충전을 위한 첨가제를 포함하는 금속 전기도금 조성물
US9758885B2 (en) 2012-11-09 2017-09-12 Basf Se Composition for metal electroplating comprising leveling agent
EP3839103B1 (en) 2015-06-30 2023-07-19 MacDermid Enthone Inc. Cobalt filling of interconnects in microelectronics
EP3516096A4 (en) * 2016-09-22 2020-10-21 MacDermid Enthone Inc. MICROELECTRONIC COPPER ELECTRODEPOSITION
WO2018073011A1 (en) 2016-10-20 2018-04-26 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN110100048B (zh) * 2016-12-20 2022-06-21 巴斯夫欧洲公司 包含用于无空隙填充的抑制试剂的用于金属电镀的组合物
US11035048B2 (en) * 2017-07-05 2021-06-15 Macdermid Enthone Inc. Cobalt filling of interconnects
CN111051576B (zh) 2017-09-04 2022-08-16 巴斯夫欧洲公司 用于金属电镀的包含流平剂的组合物
ES2847957T3 (es) 2018-06-11 2021-08-04 Atotech Deutschland Gmbh Un baño ácido de galvanoplastia de zinc o aleación de zinc-níquel para el depósito de una capa de zinc o aleación de zinc-níquel
CN114450438A (zh) 2019-09-27 2022-05-06 巴斯夫欧洲公司 用于铜凸块电沉积的包含流平剂的组合物
US20220333262A1 (en) 2019-09-27 2022-10-20 Basf Se Composition for copper bump electrodeposition comprising a leveling agent
CN115335434A (zh) 2020-04-03 2022-11-11 巴斯夫欧洲公司 用于铜凸块电沉积的包含聚氨基酰胺型流平剂的组合物
EP3922662A1 (en) 2020-06-10 2021-12-15 Basf Se Polyalkanolamine
JP2024540824A (ja) 2021-10-01 2024-11-06 ビーエーエスエフ ソシエタス・ヨーロピア ポリアミノアミド型レベリング剤を含む銅電着用組成物
WO2024008562A1 (en) 2022-07-07 2024-01-11 Basf Se Use of a composition comprising a polyaminoamide type compound for copper nanotwin electrodeposition
EP4638837A1 (en) 2022-12-19 2025-10-29 Basf Se A composition for copper nanotwin electrodeposition
KR20250136853A (ko) * 2023-01-18 2025-09-16 맥더미드 엔쏜 인코포레이티드 전도성 기판 상의 얇은 구리 필름의 전착

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