TWI738800B - 為引線迴路產生引線迴路輪廓的方法以及檢查相鄰的引線迴路之間具有足夠間隙的方法 - Google Patents

為引線迴路產生引線迴路輪廓的方法以及檢查相鄰的引線迴路之間具有足夠間隙的方法 Download PDF

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TWI738800B
TWI738800B TW106120567A TW106120567A TWI738800B TW I738800 B TWI738800 B TW I738800B TW 106120567 A TW106120567 A TW 106120567A TW 106120567 A TW106120567 A TW 106120567A TW I738800 B TWI738800 B TW I738800B
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巴西爾 米爾頓
偉 秦
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美商庫利克和索夫工業公司
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Abstract

本發明提供了一種產生與半導體封裝相關的引線迴路輪廓的方法。所述方法包括以下步驟：(a)提供與半導體封裝相關的封裝資料；和(b)產生半導體封裝的引線迴路的迴路輪廓，所述迴路輪廓包括沿著所述引線迴路的長度的至少一部分的容許帶。

Description

為引線迴路產生引線迴路輪廓的方法以及檢查相鄰的引線迴路之間具有足夠間隙的方法
本發明涉及引線迴路的形成，具體涉及為半導體封裝中的引線迴路產生引線迴路輪廓的改良方法。
在半導體器件的加工和封裝中，引線鍵合仍然是在封裝體內的兩個位置之間(例如，在半導體晶粒的晶粒墊片和引線框的引線之間)提供電氣互連的主要方法。更詳而言之，使用引線鍵合器(也稱為引線鍵合機)將引線迴路形成在各個位置之間，並以電氣互連。例如，可使用球鍵合機、楔形鍵合機和條帶鍵合機等形成引線迴路。在球鍵合機上形成的示例性的引線迴路包括(i)鍵合至第一鍵合位置(例如，半導體晶粒的晶粒墊片)的球鍵合，(ii)鍵合至第二鍵合位置(例如，引線框的引線)的針腳式鍵合，和(iii)位於球鍵合和針腳式鍵合之間的一定長度的引線。設計引線鍵合工業的示例性專利文獻包括：美國專利8,302,840號、美國專利9,496,240號和美國專利申請公佈2001/0072406號，這些專利文獻中的每篇的全部內容通過引用結合於此。
在具有高數目的引線迴路的封裝(例如，高引腳數引線鍵合應用)中，引線迴路可以在空間中重疊(例如，在三維空間中彼此交錯)。然而，在鍵合器上的迴路成形的最佳化過程很費力，通常需要幾周或幾個月的時間。此外，在完成迴路成形的最佳化之後，並不能保證將擬定的所有引線迴路包含在給定封裝中迴路是確實可行的。圍繞引線迴路的可行性的不確定性，將迫使封裝設計者考慮(除引線鍵合外的)其它可替代的封裝技術。
因此，提供為半導體封裝中的引線迴路產生引線迴路輪廓的改良方法是迫切需要的。
根據本發明的示例性實施例，提供了一種產生與半導體封裝相關的引線迴路的方法。所述方法包括以下步驟：(a)提供與半導體封裝相關的封裝資料；以及(b)產生半導體封裝的引線迴路的迴路輪廓，該迴路輪廓包括沿著該引線迴路的長度的至少一部分的容許帶。
本發明的方法還可以被實施為裝置(例如，實施為引線鍵合機的智能的一部分)，或者被實施為電腦可讀載體上的電腦程式指令(例如，實施為用於與引線鍵合機結合使用的電腦可讀載體)。
在本文中，「迴路輪廓」或「引線迴路輪廓」等用語是指第一鍵合位置(例如，引線迴路的球鍵合位置)和第二鍵合位置(例如，引線迴路的針腳式鍵合位置)之間的引線迴路形狀的規格。迴路輪廓通常由引線鍵合機的使用者設定，並且包括給定的引線迴路的期望規格。例如，迴路輪廓規格通常包括(i)要包括在引線迴路中的彎曲和(或)扭結的數目，和(ii)空間中的彎曲或扭結的位置(例如，相對於第一鍵合位置和第二鍵合位置中的至少一個位置的xyz座標)。由於最大迴路高度通常出現在引線迴路的彎曲或扭結處，所以迴路輪廓也可以包括所得的引線迴路的最大迴路高度。「迴路形狀」或「引線迴路形狀」等用詞通常與「迴路輪廓」或「引線迴路輪廓」同義使用。根據本發明的某些方面，迴路輪廓還應包括圍繞(或繞著)引線迴路的至少一部分設置的容許帶。
在本文中，「容許帶」或「間隙區域」等用詞是指圍繞(或繞著)給定的引線迴路輪廓的範圍(例如，3D區域)。根據本發明的示例性態樣，理想的是，相鄰的容許帶不會彼此重疊，或者如果它們彼此重疊，它們可以在預定的規格內重疊。當然，在本發明的範疇內，使相鄰的容許帶也可以重疊。此外，容許帶也適用於諸如晶粒的一部分(例如，晶粒邊緣)、相鄰的部件(例如，表面安裝部件)等的其它障礙物。也就是說，根據本發明的示例性態樣，理想的是，容許帶不會與此類障礙物的位置重疊。
根據本發明的特定實施例，提供了將引線迴路輪廓(例如，引線迴路形狀)最佳化的方法，所述方法包括三維引線迴路的最佳化。所述方法可包括為半導體封裝中的每個引線迴路產生三維(3D)的迴路輪廓。當引線迴路在引線鍵合器上被鍵合時，引線迴路經常會傾斜和搖擺。本發明的各個方面基於引線迴路的物理特性考慮了它們的潛在缺陷(例如，引線傾斜、引線搖擺等)，並設置了圍繞每個引線的容許帶(例如，也可稱為容許區域、間隙區域、衝突區域等)。這種容許帶可形成為包括平截頭體、橢圓體。此外，在這種容許帶之間執行間隙/干擾檢查的方法允許堅固的迴路形狀設計，並允許迴路最佳化的時間顯著縮短。
為了執行這種間隙/干擾檢查，演算法(例如，在引線鍵合器的電腦上運行的或者在引線鍵合器以外的電腦上運行的演算法)可以利用引線迴路形狀、扭結位置、引線跨度、引線長度、引線鍵合位置等。在確認可接受的引線迴路輪廓(包括可接受的容許帶)後，可以使用額外的處理過程(包括其它演算法)來確定(例如，使用在引線鍵合機的電腦、或另一台電腦等上運行的一個或多個演算法來自動確定)形成被包括在半導體封裝中的引線迴路的順序。
現在參考附圖，圖1A示出了在半導體晶粒102和引線框的引線104a之間延伸的引線迴路100。如圖1A所示，引線迴路100具有例如包括各種扭結、彎曲和引線跨度的迴路輪廓(例如，迴路形狀)。圖1B示出了引線迴路100，引線迴路100在引線迴路100的第一端連接至(半導體晶粒102的)晶粒墊片102a並在引線迴路100的第二端連接至引線104a。圖1C示出了引線迴路100的透視圖。
根據本發明的特定示例性實施例，容許帶被包括在引線迴路輪廓中。圖2A至圖2C示出了這種迴路輪廓的示例。更詳而言之，圖2A所示的引線迴路100的迴路輪廓包括容許帶100a。容許帶100a包括多個區段：區段100a1、區段100a2、區段100a3和區段100a4。在容許帶100a的各個區段之間的是如球體、橢圓體等的形狀。在圖2A至圖2C的示例中，容許帶沿著其長度具有均勻直徑的圓形形狀。然而，應當理解的是，本發明的迴路輪廓中的容許帶的形式可以有其他顯著的變化。例如，這種容許帶可以具有非圓形形狀，(例如，橢圓形或其它形狀)，並且容許帶的直徑(或其它可測量的量)可以沿著引線迴路的長度變化。
圖3A至圖3C示出了與圖2A至圖2C所示的容許帶100a相比不同的、與引線迴路100相連的容許帶200a。如圖3A至圖3C所示，容許帶200a包括區段200a1、區段200a2、區段200a3和區段200a4。如在圖3A至圖3C中進一步示出的，區段200a1、區段200a2、區段200a3和區段200a4中的每個具有沿著它們各自的長度變化的形狀。例如，參考區段200a1，隨著引線遠離半導體晶粒102上的第一鍵合位置向上延伸，容許帶的尺寸也隨之增大。
根據本發明的內容，在半導體封裝中具有多個引線迴路(例如，一個或多個引線迴路與其它引線迴路可能重疊或交錯)的應用中，包括容許帶的迴路輪廓特別實用。圖4A至圖4C示出了在半導體晶粒402與引線框的引線404a、404b之間延伸的兩個引線迴路400、410。更具體來說，引線迴路400在晶粒墊片402a和引線404a之間延伸。同樣地，引線迴路410在晶粒墊片402b和引線404b之間延伸。
圖5A至圖5C示出了包括容許帶的引線迴路400和引線迴路410的迴路輪廓。更具體而言，引線迴路400包括容許帶400a(其中，容許帶400a包括如以上結合其它容許帶描述的多個區段)和容許帶410a(其中，容許帶410a包括如上所述的區段)。如圖5C所示，容許帶400a和容許帶410a之間存在足夠的間隙。
為了確定引線迴路的相鄰容許帶之間是否存在足夠的間隙，可以使用演算法(等)來檢查相鄰容許帶是否符合如相鄰容許帶之間的可接受的間隙水平的預定標準。在確定給定的應用中的可接受的間隙量時，這種演算法可以取決於現有資料(例如，在資料結構、資料庫、查閱資料表等中的現有資料)。如果檢查指示不符合預定標準(例如，在包括容許帶的迴路輪廓的至少一部分之間沒有可接受的間隙水平)，則可以調整一個或多個迴路輪廓。在調整後，可以再執行一次檢查以確定是否符合預定標準。
圖6A示出了在半導體晶粒602和引線框的引線604a、引線604b、引線604c之間延伸的三個引線迴路600、610和620。更具體來說，引線迴路600在半導體晶粒602的晶粒墊片(未示於圖中)和引線604a之間延伸。同樣地，引線迴路610在半導體晶粒602的晶粒墊片(未示於圖中)和引線604b之間延伸。同樣地，引線迴路620在半導體晶粒602的晶粒墊片(未示於圖中)和引線604c之間延伸。為了具體說明本發明的態樣，現假設「檢查」確定了相鄰的引線迴路610和引線迴路620不符合預定標準。更具體來說，假設在引線迴路610和引線迴路620的容許帶之間沒有足夠的間隙。如在圖6B所示的示例中，引線迴路620(此時被稱為引線迴路620')的迴路輪廓(迴路形狀)已經被改變以提供足夠的間隙。更詳而言之，引線迴路620的扭結位置被改變而得到引線迴路620'。以下將結合圖7A至圖7C以及圖8A至圖8C詳細描述此過程。
具體參考圖7A至圖7C，引線迴路600、引線迴路610和引線迴路620中的每個包括各自的容許帶600a、容許帶610a和容許帶620a。如圖7C所示，容許帶610a和容許帶620a之間沒有足夠的間隙。具體參考圖8A至圖8C，其中，引線迴路620的迴路輪廓已經被改變(如上文結合圖6B所描述的，其中，引線迴路現在被標記為620')，此時足夠的間隙被提供在容許帶610a和容許帶620a'之間。
圖9是根據本發明的特定示例性實施例的流程圖。本領域技術人員應當理解，流程圖中包括的某些步驟可以被省略；某些附加步驟可以被添加；並且，步驟的順序可以從所示的順序被改變。
圖9示出了一種產生與半導體封裝相關的引線迴路輪廓的方法。在步驟900中，提供與半導體封裝相關的封裝資料(例如，半導體封裝的二維引線佈局)。可以使用關於封裝的電腦資料(例如，與半導體封裝相關的CAD資料)將這種封裝資料提供至引線鍵合機。在另一示例中，可以使用引線鍵合機的線上(例如，在鍵合器上)教學參考系統來提供封裝資料。封裝資料的具體件數當然會因應用而異；然而，可作為封裝資料提供至引線鍵合機(或者與引線鍵合機分開，例如提供至離線電腦系統)的資料的類型的示例包括半導體晶粒高度、半導體晶粒的晶粒墊片位置、引線框的引線位置，第一鍵合位置和第二鍵合位置之間的相對距離、引線直徑以及引線類型。
在步驟902中，產生半導體封裝的複數個引線迴路的迴路輪廓。迴路輪廓(例如，引線迴路形狀)包括沿著引線迴路的長度的至少一部分的容許帶。在步驟904中，執行檢查以確定步驟902中產生的複數個引線迴路的迴路輪廓是否符合預定標準(例如，這種預定標準可包括在迴路輪廓之間的可接受的間隙水平)。
如果符合預定標準(如在步驟904中的檢查期間所確定的)，則在步驟906中使用迴路輪廓為引線迴路中的每個產生迴路成形參數。如果不符合預定標準(如在步驟904中的檢查期間所確定的)，在步驟908中調整迴路輪廓中的至少一個(例如，參見結合圖6B及圖7A至圖7C所示出和描述的對迴路輪廓的調整)。在步驟908後，在步驟904中對調整後的迴路輪廓重複檢查，可以重複所述處理過程直到在步驟906中符合預定標準。可替代地，在預定數目的循環(或時間、或其它標準)後，該工藝可以被放棄(終止)，並且半導體器件可被認為不適用於引線鍵合。在另一替代方案中，使用者能夠覆寫(手動地或自動地)不符合的預定標準。
根據本發明的特定示例性實施例，使用在電腦(例如，與在引線鍵合機上的或與引線鍵合機分離的電腦)上運行的演算法來限定迴路成形參數(從而限定迴路成形軌跡)。示例性的迴路成形參數包括：(a)用於形成引線迴路的工具軌跡，工具軌跡包括每段運動的端點位置和端點之間的軌跡；(b)通過引線鍵合機的換能器施加的鍵合能量參數；(c)通過引線鍵合機施加的鍵合力參數；(d)與鍵合能量和鍵合力中的至少一個相關的時間參數；(e)在形成所期望的引線迴路的引線鍵合循環的至少一部分期間的鍵合工具速度；(f)在形成所期望的引線迴路的引線鍵合循環的至少一部分期間的引線夾具位置。
結合迴路成形參數的推導，演算法可以利用儲存在引線鍵合機中(或儲存在另一位置中)的迴路模型資料來更接近地估計與所期望的引線迴路相關的迴路成形參數。例如，通過實驗和測試，使用各種引線類型，用於各種類型的引線迴路的所期望的迴路成形參數可以被推導出來並儲存在引線鍵合機的記憶體中(例如，通過查閱資料表等)或者能夠被引線鍵合機訪問(通過電腦網路等)。
根據本發明的內容，可以使迴路最佳化的時間顯著降低。此外，本發明也提供堅固的迴路形狀設計，同時考慮鄰近的引線迴路形狀。此外，封裝設計者可以避免在複雜的高引腳數應用中成環的可行性的不確定性。
雖然本說明書中係顯示並針對本發明特定的實施例進行說明，但本發明的範疇不應受到本說明書的詳細內容所限制。相較之下，在不脫離本發明的申請專利範圍所保護的範疇以及等同的範疇的條件下，可以對本發明做出各種改良。
100‧‧‧引線迴路 100a‧‧‧容許帶 100a1‧‧‧區段 100a2‧‧‧區段 100a3‧‧‧區段 100a4‧‧‧區段 102‧‧‧半導體晶粒 102a‧‧‧晶粒墊片 104a‧‧‧引線 200a‧‧‧容許帶 200a1‧‧‧區段 200a2‧‧‧區段 200a3‧‧‧區段 200a4‧‧‧區段 400‧‧‧引線迴路 400a‧‧‧容許帶 402‧‧‧半導體晶粒 402a‧‧‧晶粒墊片 402b‧‧‧晶粒墊片 404a‧‧‧引線 404b‧‧‧引線 410‧‧‧引線迴路 410a‧‧‧容許帶 600‧‧‧引線迴路 600a‧‧‧容許帶 602‧‧‧半導體晶粒 604a‧‧‧引線 604b‧‧‧引線 604c‧‧‧引線 610‧‧‧引線迴路 610a‧‧‧容許帶 620‧‧‧引線迴路 620'‧‧‧引線迴路 620a‧‧‧容許帶 620a'‧‧‧容許帶 900‧‧‧步驟 902‧‧‧步驟 904‧‧‧步驟 906‧‧‧步驟 908‧‧‧步驟
本領域中具有通常知識者在參照附圖閱讀下方的詳細說明後，可以對本發明有更良好的了解。在此要強調的是，根據慣例，圖式中的各個特徵並未依照比例繪製。相對的，為了圖式的清晰性，各個特徵的尺寸係隨意地放大或縮小。其中，該些附圖包括： 圖1A是用於說明本發明的特定示例性實施例的引線迴路的側視圖； 圖1B是圖1A的引線迴路的俯視圖； 圖1C是圖1A的引線迴路的透視圖； 圖2A是根據本發明的示例性實施例的包括容許帶的引線迴路的側視圖； 圖2B是圖2A的引線迴路的俯視圖； 圖2C是圖2A的引線迴路的透視圖； 圖3A是根據本發明的示例性實施例的具有不同容許帶的圖2A的引線迴路的側視圖； 圖3B是圖3A的引線迴路的俯視圖； 圖3C是圖3A的引線迴路的透視圖； 圖4A是用於說明本發明的特定示例性實施例的兩個引線迴路的側視圖； 圖4B是圖4A的引線迴路的俯視圖； 圖4C是圖4A的引線迴路的透視圖； 圖5A是根據本發明的示例性實施例的具有容許帶的圖4A的兩個引線迴路的側視圖； 圖5B是圖5A的俯視圖； 圖5C是圖5A的透視圖； 圖6A是用於說明本發明的特定示例性實施例的三個引線迴路的側視圖，所述三個引線迴路中的兩個引線迴路之間存在干擾； 圖6B是根據本發明的示例性實施例的圖6A的三個引線迴路的側視圖，所述三個引線迴路中的一個的迴路輪廓已被調整； 圖7A是根據本發明的示例性實施例的包括容許帶的圖6A的三個引線迴路的側視圖； 圖7B是圖7A的俯視圖； 圖7C是圖7A的透視圖； 圖8A是根據本發明的示例性實施例的圖7A的三個引線迴路的側視圖，所述三個引線迴路中的一個的迴路輪廓已被調整； 圖8B是圖8A的俯視圖； 圖8C是圖8A的透視圖；以及 圖9是根據本發明的示例性實施例的產生與半導體封裝相關的引線迴路輪廓的方法的流程圖。
900‧‧‧步驟
902‧‧‧步驟
904‧‧‧步驟
906‧‧‧步驟
908‧‧‧步驟

Claims (21)

  1. 一種產生與半導體封裝相關的引線迴路輪廓的方法，該方法包括以下步驟：(a)提供與該半導體封裝相關的一封裝資料；以及(b)產生用於該半導體封裝的複數個引線迴路的迴路輪廓，各該迴路輪廓包括沿著相應的該引線迴路的一長度的至少一部分的一容許帶，該容許帶界定圍繞該迴路輪廓的一預定的間隙區域，其中，各該迴路輪廓係考慮到相應的該引線迴路的潛在缺陷而被產生。
  2. 根據申請專利範圍第1項所述的方法，該步驟(b)包括產生包括該容許帶的各該引線迴路的一三維迴路輪廓。
  3. 根據申請專利範圍第1項所述的方法，進一步包括步驟(c)：檢查該步驟(b)中產生的該等引線迴路的該等迴路輪廓是否符合一預定標準。
  4. 根據申請專利範圍第3項所述的方法，該預定標準包括該等迴路輪廓之間的可接受的一間隙水平。
  5. 根據申請專利範圍第3項所述的方法，如果該等迴路輪廓不符合該預定標準，則調整該等迴路輪廓中的至少一個。
  6. 根據申請專利範圍第1項所述的方法，使用一引線鍵合機上的電腦執行該步驟(b)。
  7. 根據申請專利範圍第1項所述的方法，使用一與引線鍵合機分開的電腦執行該步驟(b)。
  8. 根據申請專利範圍第1項所述的方法，各該引線迴路連接該半導體封裝上的至少兩個分別的接觸點。
  9. 根據申請專利範圍第1項所述的方法，該容許帶是該引線迴路在沿著該引線迴路的該長度的複數個位置處的一可接受位置的指示。
  10. 根據申請專利範圍第1項所述的方法，該等引線迴路輪廓用於在一引線鍵合機上推導複數個迴路成形參數。
  11. 根據申請專利範圍第10項所述的方法，所推導出的該等迴路成形參數包括以下參數中的至少一個：(i)用於形成該引線迴路的工具軌跡；(ii)通過該引線鍵合機的換能器施加的鍵合能量參數；(iii)通過該引線鍵合機施加的鍵合力參數；(iv)與鍵合能量參數和鍵合力參數中的至少一個相關的時間參數；(v)在形成該引線迴路的引線鍵合循環的至少一部分期間的鍵合工具速度；以及，(vi)在形成該引線迴路的引線鍵合循環的至少一部分期間的引線夾具位置。
  12. 根據申請專利範圍第1項所述的方法，該步驟(b)包括為該複數個引線迴路中的每一個產生包括分別的該容許帶的該迴路輪廓，該等引線迴路構造成用於鍵合在該半導體封裝上，該等引線迴路中的每個的該容許帶是相應的該迴路輪廓的形狀的函數。
  13. 根據申請專利範圍第1項所述的方法，該容許帶在沿著該引線迴路的該長度的各個點處具有一圓形形狀。
  14. 根據申請專利範圍第13項所述的方法，該容許帶的該圓形形狀具有均勻的直徑。
  15. 根據申請專利範圍第13項所述的方法，該容許帶的該圓形形狀具有在沿著該引線迴路的該長度的不同位置處變化的直徑。
  16. 根據申請專利範圍第1項所述的方法，該容許帶在沿著各該引線迴路的該長度的各點處具有一非圓形形狀。
  17. 根據申請專利範圍第1項所述的方法，該步驟(a)中提供的該封裝資料包括以下資料中的至少一個：(a1)與該半導體封裝相關的CAD資料，以及(a2)使用該引線鍵合機的一線上教學參考系統推導出的封裝資料。
  18. 根據申請專利範圍第1項所述的方法，該步驟(a)中提供的該封裝資料包括半導體晶粒高度、半導體晶粒的晶粒墊片的位置、引線框的引線位置、第一鍵合位置和第二鍵合位置之間的相對距離、引線直徑以及引線類型中的至少一個。
  19. 根據申請專利範圍第1項所述的方法，在一球鍵合機上使用一球鍵合工藝形成該等引線迴路。
  20. 根據申請專利範圍第1項所述的方法，在一楔形鍵合機上使用一楔形鍵合工藝形成該等引線迴路。
  21. 根據申請專利範圍第1項所述的方法，在一條帶鍵合機上使用一條帶鍵合工藝形成該等引線迴路。
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