TWI736790B - 加工裝置以及加工方法 - Google Patents

加工裝置以及加工方法 Download PDF

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Publication number
TWI736790B
TWI736790B TW107127646A TW107127646A TWI736790B TW I736790 B TWI736790 B TW I736790B TW 107127646 A TW107127646 A TW 107127646A TW 107127646 A TW107127646 A TW 107127646A TW I736790 B TWI736790 B TW I736790B
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TW
Taiwan
Prior art keywords
grinding
workpiece
height position
sealed substrate
displacement sensor
Prior art date
Application number
TW107127646A
Other languages
English (en)
Chinese (zh)
Other versions
TW201913798A (zh
Inventor
藤原直己
黄善夏
Original Assignee
日商Ｔｏｗａ股份有限公司
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Publication of TW201913798A publication Critical patent/TW201913798A/zh
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Publication of TWI736790B publication Critical patent/TWI736790B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
    • B26D1/01—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work
    • B26D1/12—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor involving a cutting member which does not travel with the work having a cutting member moving about an axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Forests & Forestry (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Dicing (AREA)
TW107127646A 2017-08-22 2018-08-08 加工裝置以及加工方法 TWI736790B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-159274 2017-08-22
JP2017159274A JP6482618B2 (ja) 2017-08-22 2017-08-22 加工装置及び加工方法

Publications (2)

Publication Number Publication Date
TW201913798A TW201913798A (zh) 2019-04-01
TWI736790B true TWI736790B (zh) 2021-08-21

Family

ID=65514497

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107127646A TWI736790B (zh) 2017-08-22 2018-08-08 加工裝置以及加工方法

Country Status (4)

Country Link
JP (1) JP6482618B2 (ja)
KR (1) KR102198458B1 (ja)
CN (1) CN109420979B (ja)
TW (1) TWI736790B (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112008593A (zh) * 2020-09-09 2020-12-01 福建省青山纸业股份有限公司 一种自动研磨装置
JP7154336B2 (ja) * 2021-03-26 2022-10-17 Ｔｏｗａ株式会社 切断装置、及び、切断品の製造方法
WO2024052967A1 (ja) * 2022-09-05 2024-03-14 株式会社レゾナック 半導体装置の製造方法、構造体及び半導体装置
NL2033761B1 (en) * 2022-12-20 2024-06-26 Besi Netherlands Bv Sawing device for forming saw-cuts into a semiconductor product and method therefor

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5899792A (en) * 1996-12-10 1999-05-04 Nikon Corporation Optical polishing apparatus and methods
US20050009456A1 (en) * 2001-11-01 2005-01-13 Tatsuya Sasaki Polishing apparatus
TW201312644A (zh) * 2011-09-15 2013-03-16 Sintokogio Ltd 硬脆性材料之研削、研磨加工系統及研削、研磨方法
US20130128247A1 (en) * 2011-11-21 2013-05-23 Asml Netherlands B.V. Level Sensor, a Method for Determining a Height Map of a Substrate, and a Lithographic Apparatus
WO2014142058A1 (ja) * 2013-03-12 2014-09-18 新東工業株式会社 センタレス研磨装置
JP2014220443A (ja) * 2013-05-10 2014-11-20 株式会社ディスコ パッケージ基板の加工方法
TW201529232A (zh) * 2014-01-21 2015-08-01 Kinik Co 具有最佳磨料露出率之化學機械研磨修整器
TW201608618A (zh) * 2014-07-28 2016-03-01 Disco Corp 晶圓之加工方法
TW201709371A (zh) * 2015-04-21 2017-03-01 Disco Corp 晶圓的加工方法
TW201707861A (zh) * 2015-08-26 2017-03-01 Disco Corp 磨削方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1270148A1 (en) * 2001-06-22 2003-01-02 Infineon Technologies SC300 GmbH & Co. KG Arrangement and method for conditioning a polishing pad
JP2003151923A (ja) * 2001-11-14 2003-05-23 Tokyo Seimitsu Co Ltd ダイシング装置
JP2003168655A (ja) * 2001-12-03 2003-06-13 Tokyo Seimitsu Co Ltd ダイシング装置
JP2003214822A (ja) * 2002-01-25 2003-07-30 Disco Abrasive Syst Ltd 深さ計測装置及び深さ計測方法並びに切削装置
JP2005175148A (ja) * 2003-12-10 2005-06-30 Tokyo Seimitsu Co Ltd ダイシング方法
JP2005353749A (ja) * 2004-06-09 2005-12-22 Tokyo Seimitsu Co Ltd ダイシング装置及びダイシング方法
JP4555092B2 (ja) * 2005-01-05 2010-09-29 株式会社ディスコ レーザー加工装置
JP2007042810A (ja) * 2005-08-02 2007-02-15 Tokyo Seimitsu Co Ltd ワーク切断方法
JP5335250B2 (ja) * 2008-01-29 2013-11-06 株式会社ディスコ ウエーハの切削加工方法
JP2013056388A (ja) * 2011-09-08 2013-03-28 Disco Corp 加工装置
JP2014184495A (ja) * 2013-03-21 2014-10-02 Toshiba Corp 加工治具、加工装置、および加工方法
JP6218526B2 (ja) * 2013-09-20 2017-10-25 Ｔｏｗａ株式会社 切断装置及び切断方法
JP6262593B2 (ja) 2014-04-21 2018-01-17 株式会社ディスコ 研削装置
JP6521687B2 (ja) * 2015-03-23 2019-05-29 株式会社ディスコ 切削ブレードの検査方法
JP6494377B2 (ja) 2015-03-31 2019-04-03 株式会社東京精密 ワーク加工装置
JP2016213240A (ja) * 2015-04-30 2016-12-15 Ｔｏｗａ株式会社 製造装置及び製造方法
JP2017005056A (ja) * 2015-06-08 2017-01-05 株式会社ディスコ ウエーハの加工方法
JP6800745B2 (ja) * 2016-12-28 2020-12-16 株式会社ディスコ 半導体パッケージの製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5899792A (en) * 1996-12-10 1999-05-04 Nikon Corporation Optical polishing apparatus and methods
US20050009456A1 (en) * 2001-11-01 2005-01-13 Tatsuya Sasaki Polishing apparatus
TW201312644A (zh) * 2011-09-15 2013-03-16 Sintokogio Ltd 硬脆性材料之研削、研磨加工系統及研削、研磨方法
US20130128247A1 (en) * 2011-11-21 2013-05-23 Asml Netherlands B.V. Level Sensor, a Method for Determining a Height Map of a Substrate, and a Lithographic Apparatus
WO2014142058A1 (ja) * 2013-03-12 2014-09-18 新東工業株式会社 センタレス研磨装置
JP2014220443A (ja) * 2013-05-10 2014-11-20 株式会社ディスコ パッケージ基板の加工方法
TW201529232A (zh) * 2014-01-21 2015-08-01 Kinik Co 具有最佳磨料露出率之化學機械研磨修整器
TW201608618A (zh) * 2014-07-28 2016-03-01 Disco Corp 晶圓之加工方法
TW201709371A (zh) * 2015-04-21 2017-03-01 Disco Corp 晶圓的加工方法
TW201707861A (zh) * 2015-08-26 2017-03-01 Disco Corp 磨削方法

Also Published As

Publication number Publication date
CN109420979B (zh) 2022-02-11
KR20190021155A (ko) 2019-03-05
JP2019040899A (ja) 2019-03-14
CN109420979A (zh) 2019-03-05
JP6482618B2 (ja) 2019-03-13
KR102198458B1 (ko) 2021-01-06
TW201913798A (zh) 2019-04-01

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