TWI731197B - 量測系統、用於晶圓量測之方法及非暫時性電腦可讀媒體 - Google Patents

量測系統、用於晶圓量測之方法及非暫時性電腦可讀媒體 Download PDF

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TWI731197B
TWI731197B TW106141279A TW106141279A TWI731197B TW I731197 B TWI731197 B TW I731197B TW 106141279 A TW106141279 A TW 106141279A TW 106141279 A TW106141279 A TW 106141279A TW I731197 B TWI731197 B TW I731197B
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wafer
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TW106141279A
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TW201828254A (zh
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考希克 沙
湯瑪士 克拉
緒方 李
海可 艾森貝克
摩里斯 史托林
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美商克萊譚克公司
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2433—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring outlines by shadow casting
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/13—Edge detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • G06T7/73—Determining position or orientation of objects or cameras using feature-based methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20048—Transform domain processing
    • G06T2207/20061—Hough transform
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Quality & Reliability (AREA)
  • Geometry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
TW106141279A 2016-11-29 2017-11-28 量測系統、用於晶圓量測之方法及非暫時性電腦可讀媒體 TWI731197B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662427373P 2016-11-29 2016-11-29
US62/427,373 2016-11-29
US15/627,834 2017-06-20
US15/627,834 US10540759B2 (en) 2016-11-29 2017-06-20 Bonded wafer metrology

Publications (2)

Publication Number Publication Date
TW201828254A TW201828254A (zh) 2018-08-01
TWI731197B true TWI731197B (zh) 2021-06-21

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US (1) US10540759B2 (enExample)
EP (1) EP3507826B1 (enExample)
JP (1) JP6916877B2 (enExample)
KR (1) KR102301552B1 (enExample)
CN (1) CN109964307B (enExample)
TW (1) TWI731197B (enExample)
WO (1) WO2018102260A1 (enExample)

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JP7682654B2 (ja) * 2021-03-11 2025-05-26 株式会社岡本工作機械製作所 半導体装置の製造方法及び製造装置
IL304714B2 (en) * 2021-04-19 2025-03-01 Kla Corp Edge profile inspection for delamination defects
US12131454B2 (en) * 2021-09-15 2024-10-29 Onto Innovation, Inc. Substrate mapping using deep neural-networks
CN115661143B (zh) * 2022-12-14 2023-05-30 惠州威尔高电子有限公司 用于MiniLED晶圆缺陷的快速检测系统
JP2024130368A (ja) 2023-03-14 2024-09-30 株式会社コベルコ科研 貼合せ基板の位置ずれ量測定装置および該方法ならびに半導体製造装置
CN116313971B (zh) * 2023-05-17 2023-10-20 拓荆键科(海宁)半导体设备有限公司 通过边缘检测来进行晶圆键合对准的方法
US20250086780A1 (en) * 2023-09-12 2025-03-13 Kla Corporation Concentricity offset measurement for hybrid bonding

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TWI447842B (zh) * 2010-12-13 2014-08-01 Ev Group E Thallner Gmbh 判定對準誤差的裝置、器件和方法

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Publication number Publication date
EP3507826A4 (en) 2020-04-15
TW201828254A (zh) 2018-08-01
WO2018102260A1 (en) 2018-06-07
CN109964307A (zh) 2019-07-02
JP6916877B2 (ja) 2021-08-11
US20180150952A1 (en) 2018-05-31
EP3507826B1 (en) 2025-05-28
CN109964307B (zh) 2023-03-10
KR102301552B1 (ko) 2021-09-13
EP3507826A1 (en) 2019-07-10
KR20190082947A (ko) 2019-07-10
US10540759B2 (en) 2020-01-21
JP2019537263A (ja) 2019-12-19

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