WO2016152582A1 - 電子線式パターン検査装置 - Google Patents
電子線式パターン検査装置 Download PDFInfo
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- WO2016152582A1 WO2016152582A1 PCT/JP2016/057774 JP2016057774W WO2016152582A1 WO 2016152582 A1 WO2016152582 A1 WO 2016152582A1 JP 2016057774 W JP2016057774 W JP 2016057774W WO 2016152582 A1 WO2016152582 A1 WO 2016152582A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
- G01N23/203—Measuring back scattering
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
- G01N21/892—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the flaw, defect or object feature examined
- G01N2021/8924—Dents; Relief flaws
Definitions
- the present invention relates to an electron beam pattern inspection apparatus for semiconductor wafers, and more particularly to an apparatus for inspecting and reviewing hole patterns and groove patterns having a high aspect ratio.
- Patent Document 1 As described in Patent Document 1, as the first background art of the present invention, semiconductor device manufacturer companies have developed more detailed defects, In order to detect defects in high-aspect processes, we have introduced an electron beam wafer inspection system that has higher resolution and deeper focus than optical inspection equipment. A basic configuration of the electron beam type wafer inspection apparatus is shown in FIG.
- secondary electrons 263 are generated from the wafer 261.
- the detector 264 detects some of the secondary electrons 263 as a bright part and a dark part, respectively, and acquires an image by scanning the electron beam on the wafer. Pattern defects are detected by image comparison of adjacent cells or the same circuit portion obtained from the die (usually the former is called cell comparison, the latter is called die comparison), and defect position coordinates, defect map, defect category, etc. Information is output.
- Patent Document 2 discloses a technique for detecting a minute open defect or a short defect in a fine pattern by irradiating the substrate on which the pattern is formed with an electron beam.
- the generated low-energy secondary electrons and high-energy reflected electrons are detected, and first and second SEM (ScanningScanElectron Microscope) images are generated from the respective electrons, and the second SEM image is generated.
- Pattern contour data is obtained by extracting a contour from the image, and applying the contour data to the first SEM image to determine an inspection region and performing binarization processing on the inspection region Techniques for detecting defects are disclosed.
- Patent Documents 1 and 2 have the following problems.
- the first problem is that an electron beam used in the background art is an electron beam having an acceleration voltage of several kilovolts, and is a secondary electron image (referred to as a first electron beam image in Patent Document 2), a reflected electron image (In any of Patent Documents 2 (denoted as a second electron beam image), it is a problem that it is difficult to reveal defects in deep holes and deep grooves having an aspect ratio of 20 or more, which is a new need.
- the second problem is mainly related to Patent Document 1.
- the local fluctuation (edge roughness) of the edge position within the tolerance is erroneously detected as a defect. It is.
- the edge roughness is represented by triangular protrusions (281, 283), since the images are images of holes different from each other, each edge roughness has a different position and size.
- a difference image 286 is generated in the difference image generation step (285) using these images 280 and 282, and binarization processing (287) is performed using a threshold value for the difference image 286, an image 288 is obtained.
- Differences in roughness are also detected as defects.
- Patent Documents 1 and 2 describe a configuration for detecting secondary electrons and reflected electrons (described as backscattered electrons in Patent Document 1) generated from a sample irradiated with a primary electron beam. .
- Information on the surface of the sample is included in a signal obtained by detecting secondary electrons, and surface defects can be detected from the secondary electron image.
- deep hole and deep groove information is generally included in the signals that detect reflected electrons, and reflected electron images detect defects in deep holes and deep grooves rather than secondary electron images. Suitable for However, neither of Patent Documents 1 and 2 describes the detection of a deep hole or deep groove defect from a reflected electron image.
- the present invention solves the above-described problems and can reveal defects in deep holes and deep grooves having an aspect ratio of 20 or more, and can perform high-precision inspection without being affected by edge roughness.
- An electron beam pattern inspection apparatus is provided.
- an electron beam pattern inspection apparatus includes an electron beam irradiation unit that irradiates a sample on which a pattern is formed with a converged electron beam, and an electron that is converged by the electron beam irradiation unit.
- a backscattered electron detector for detecting backscattered electrons having a relatively high energy generated from the sample irradiated with the beam, and a secondary having a relatively low energy generated from the sample irradiated with the electron beam focused by the electron beam irradiator.
- a secondary electron detector that detects electrons, a reflected electron image generator that generates a reflected electron image from a signal obtained by detecting reflected electrons at the reflected electron detector, and a secondary electron that is detected by the secondary electron detector
- the secondary electron image generation unit that generates a secondary electron image from the signal obtained in this way, the reflected electron image generated by the reflected electron image generation unit, and the secondary electron image generated by the secondary electron image generation unit are processed.
- the sample defects A calculation unit that includes an inspection region extraction unit that extracts an inspection region from the secondary electron image, and a region corresponding to the inspection region extracted by the inspection region extraction unit using the reflected electron image And a defect detection unit that detects the defect by inspecting the set region.
- a focused electron beam is irradiated to a sample on which a pattern is formed, scanned, and converged.
- a reflected electron generated from a sample scanned by scanning with an electron beam is detected to generate a reflected electron image, and a relatively high energy generated from a scanned sample irradiated by a focused electron beam.
- a secondary electron image is generated by detecting a secondary electron with a low level, an inspection region is extracted from the generated secondary electron image, and a corresponding reflected inspection region is extracted from the secondary electron image using the generated reflected electron image The area was inspected to detect defects.
- a BSE image obtained by electron beam irradiation at a high acceleration voltage is used for inspection.
- defects in deep holes and deep grooves can be made obvious, so defects in deep holes and deep grooves that can not be detected by electron beam irradiation with an acceleration voltage of several kilovolts can be detected.
- SE images acquired at the same location with the same edge roughness are used as a reference, there is a problem that the edge roughness, which is a problem in the conventional cell comparison method and die comparison method, is erroneously detected as a defect. No longer.
- defects in deep holes and deep grooves having an aspect ratio of 20 or more can be made visible, and high-precision inspection can be performed without being affected by edge roughness. .
- FIG. 1 is a block diagram showing a schematic configuration of an electron beam pattern inspection apparatus according to a first embodiment of the present invention. It is a block diagram which shows the structure of the comparison calculating part of the electron beam type pattern inspection apparatus which concerns on 1st Example of this invention. It is a principle diagram of a conventional electron beam type wafer inspection apparatus. It is a flowchart explaining the problem of the conventional defect determination system. It is a figure explaining the difference between this invention and background art. It is a figure explaining the difference between this invention and background art. It is sectional drawing of the sample explaining the principle of this invention. It is sectional drawing of the sample explaining the principle of this invention. It is sectional drawing of the sample explaining the principle of this invention. It is sectional drawing of the sample explaining the principle of this invention. It is sectional drawing of the sample explaining the principle of this invention. It is sectional drawing of the sample explaining the principle of this invention. It is sectional drawing of the sample explaining the principle of this invention.
- 6B is a graph showing the relationship between the electron beam irradiation position from the center of the hole pattern and the secondary electron detection signal intensity when the pattern of FIGS. 6A and 6B is scanned with an electron beam.
- 6B is a graph showing the relationship between the electron beam irradiation position from the center of the hole pattern and the reflected electron detection signal intensity when the pattern of FIGS. 6A and 6B is scanned with an electron beam. It is a graph which shows the relationship between an acceleration voltage and a reflected-electron detection signal intensity
- the present invention provides an electron beam pattern inspection apparatus that irradiates a sample having a deep hole or deep groove having an aspect ratio of 20 or more with a focused electron beam, and generates reflected electrons with relatively high energy generated from the sample. Secondary electrons with relatively low energy are simultaneously detected by a separate detector to generate a backscattered electron image and a secondary electron image. By utilizing the characteristic that defects appear only in the backscattered electron image, A defect is detected by comparing secondary electron images.
- FIG. 1A is a diagram showing a basic configuration of an electron beam pattern inspection apparatus 100 to which the present invention is applied.
- the electron beam pattern inspection apparatus 100 includes an electron gun 101 that emits a primary electron beam 102, a condenser lens 103 that converges the primary electron beam 102, a polarizing lens 104 that deflects the primary electron beam 102, and an objective that converges the primary electron beam 102.
- the E ⁇ B deflector 107 that changes the trajectory of the secondary electrons 114 generated from the sample 200 irradiated with 102, the photomultiplier tube 115 that detects the secondary electrons whose trajectory has been changed by the E ⁇ B deflector 107, and photoelectrons
- An SE image generation unit 116 that processes a signal output from the multiplier
- An electron gun 101, a condenser lens 103, a polarizing lens 104, an objective lens 105, a stage 108, an annular scintillator 106, an optical fiber 111, a photomultiplier tube 112, and a photomultiplier tube 115 to be fired are vacuumed inside. It is installed in an evacuable column.
- the primary electron beam 102 generated by the electron gun 101 at a high acceleration voltage (for example, 15 kilovolts or more) is focused by the condenser lens 103 and further focused on the surface of the sample 200 by the objective lens 105.
- the sample is scanned two-dimensionally by the deflector 104.
- the sample targeted by the present invention is a deep hole / groove pattern in which the hole / groove depth is about several microns with respect to the hole / groove diameter of about 50 nm.
- the backscattered electrons (BSE) 110 emitted from the sample 200 irradiated with the primary electron beam 102 are detected by the annular scintillator 106 and converted into an optical signal, and are guided to the high electron multiplier 112 by the optical fiber 111.
- a digital image is formed in the BSE image generator 113 from the signal output from the electron multiplier 112.
- an annular YAG scintillator, an annular semiconductor detector, or a Robinson detector can be applied.
- annular form may be sufficient.
- the secondary electrons (SE) 114 emitted from the sample 200 irradiated with the primary electron beam 102 are guided to the high electron multiplier 115 by changing the trajectory by the E ⁇ B deflector 107, and are supplied to the high electron multiplier 115.
- a digital image is formed by the SE image generator 116 from the signal output from 115.
- a feature of this configuration is that a BSE image and an SE image at the same location on the sample 200 are simultaneously captured. By moving the stage 108, an image is taken at an arbitrary position of the sample. The captured image is stored in the storage unit 021.
- the control unit 022 adjusts the voltage applied to the periphery of the electron gun 101, the focus adjustment of the condenser lens 103 and the objective lens 105, the scanning of the primary electron beam 02 on the surface of the sample 200 by the deflection electrode 104, the movement of the stage 108, and the image generation unit 113. , 116 is controlled.
- the comparison calculation unit 022 performs defect detection processing using the captured images generated by the image generation units 113 and 116. Input of sample information, input of imaging conditions, output of inspection results, and the like are performed by the input / output unit 024.
- FIG. 1B shows the configuration of the comparison operation unit 022.
- the comparison calculation unit 022 includes a region extraction unit 0221 that extracts an inspection region from the image obtained by the SE image generation unit 116, and a defect detection unit that detects a defect by processing the image of the inspection region set by the inspection region setting unit 0221. 0223, a feature amount calculation unit 0224 that calculates the feature amount of the defect detected by the defect detection unit 0223, and outputs information on the feature amount of the defect calculated by the feature amount calculation unit 0224 to the storage unit 021 and the input / output unit 024 To do.
- FIG. 4A is a schematic diagram of an SE image of a hole pattern having an internal defect
- FIG. 4B is a schematic diagram of a BSE image of a hole pattern having an internal defect (detailed description of the drawing will be described later).
- the defect portion 253 becomes apparent, but since the defect does not become apparent in the SE image of FIG. 4A, the comparison operation unit 022 uses the SE image as a reference of the normal shape, and the BSE image. It is possible to detect a defect by comparing.
- FIG. 5A shows hole observation by an SE image
- FIG. 5B is a diagram schematically showing the state of hole observation by a BSE image
- FIG. 5A shows a cross-sectional view of the sample 200 in which an upper layer film 201 and a lower layer film 202 are formed, and a hole 203 having a relatively high aspect ratio is formed in the upper layer film 201.
- the reason why the defects in the hole are not revealed in the SE image is that, as shown in FIG. 5A, most of the secondary electrons 114 generated in the hole 203 strike the hole sidewall 204 and disappear.
- the annular scintillator 106 that detects the reflected electrons at a low angle functions favorably, thereby revealing defects inside the hole 203. Is possible.
- FIG. 6A to FIG. 6D are the results of confirming by electron beam simulation (Monte Carlo simulation) that defects appear in the BSE image but defects do not appear in the SE image.
- an upper layer film 601 and a lower layer film 602 are formed, and a hole 603 is formed in the upper layer film 601.
- the hole 603 is a hole having a top diameter of 70 nm as the diameter of the hole inlet 6031, a bottom diameter 6032 as a diameter of the hole bottom 6032 of 70 nm, and a hole depth 6033 of 3.2 ⁇ m (hereinafter referred to as a t70b70 hole).
- an upper layer film 601 and a lower layer film 602 are formed, and a hole 604 is formed in the upper layer film 601.
- the holes 604 are two types of holes (hereinafter referred to as t70b30 holes) in which the top diameter 6041, which is the diameter of the hole inlet 6041, is 70 nm, the bottom diameter 6042 is 30 nm, and the hole depth 6043 is 3.2 um.
- FIG. 6C shows a signal waveform of an image obtained when the sample 600 having the cross-sectional shape as shown in FIG. 6A is imaged by the SEM
- FIG. 6D shows the sample 600 having the cross-sectional shape as shown in FIG. 6B.
- the signal waveform of the image obtained when it images with SEM is shown.
- the acceleration voltage of the primary electron beam 102 was 30 kV
- FIG. 6C shows the SE signal waveform detected by the high electron multiplier 115 in the configuration of FIG. 1 and was obtained by detecting electrons having an energy of 50 eV or less. It is a waveform.
- FIG. 6D shows a low-angle BSE signal waveform detected by the annular scintillator 106 in the configuration of FIG. 1, and is obtained by detecting an electron having an energy of 5000 eV or more and a zenith angle of emitted electrons of 15 to 65 degrees. It is a waveform.
- the horizontal axis of the graphs in FIGS. 6C and 6D is the distance (x) from the center of the hole 603 or 604.
- x 35 nm corresponds to the edge of the hole bottom 6032 of the t70b70 hole (hole 603), and
- x 15 nm corresponds to the edge end of the hole bottom 6042 of the t70b30 hole (hole 604).
- the vertical axis of the graphs in FIGS. 6C and 6D represents the detected signal intensity (Yield) of the signal detected by the high electron multiplier 115 or the annular scintillator 106.
- FIG. 7A to 7C are simulation results showing the necessity of the configuration of the electron optical system according to the present embodiment shown in FIG. 1A.
- FIG. 7A shows two types of holes 701 having a cross-sectional shape formed in the sample 710 as shown in FIG. 7B, with a hole diameter of 50 nm and a depth of 3.2 microns, and the same hole diameter and a depth of 5.1 microns.
- the relationship between the acceleration voltage of the primary electron beam 102 and the detected signal intensity (Yield) when the reflected electrons 110 generated from the hole bottom 711 are detected by the annular scintillator 106 is obtained by simulation.
- an acceleration voltage corresponding to the depth of the hole 701 is required. It can be seen that in order to inspect a sample having a deep hole with an aspect ratio of 20 or more, which is the main target of the present invention, an acceleration voltage of the primary electron beam 102 of at least 15 kilovolts is required.
- FIG. 7C shows the result of calculating the zenith angle distribution of electrons emitted from the sample by simulation.
- the zenith angle is defined as an angle from the incident direction of the primary electron beam 102 as shown in FIG. 7B.
- the horizontal axis represents the zenith angle of the emitted electrons
- the vertical axis represents the detection signal intensity.
- the detection signal intensity (Yield) is large when the zenith angle is around 30-50 degrees, and in order to detect this without missing, an annular scintillator capable of detecting reflected electrons at low angles in all directions is suitable. Is shown.
- FIG. 8 shows specific calculation contents in the comparison calculation unit (022 in FIG. 1).
- the input is the SE image and BSE image shown in FIGS. 4A and 4B.
- 221 is a hole
- 222 is the outside of the hole
- 224 is a hole edge.
- the edge portion is detected brightly by the edge effect.
- edge roughness is represented by triangular protrusions.
- FIG. 4B is a BSE image acquired at the same time, in which 251 is a hole, 252 is a hole exterior, 254 is a hole edge, and 253 is a defect in a hole.
- the in-hole defect becomes apparent in the BSE image but not in the SE image. Since the SE image and the BSE image obtained by the electron beam pattern inspection apparatus 100 having the configuration shown in FIG. 1 are obtained at the same location on the sample, both have the same edge roughness. is there.
- the region extraction unit 0221 performs region extraction using the SE image 220 created by the SE image generation unit 116 (S301), and creates inspection region data 225.
- the SE image the brightness of the hole is sufficiently lower than the outside of the hole or the edge, so that a dark area is extracted by binarization and used as an inspection area.
- a contour line may be extracted and a region surrounded by the contour line may be set as an inspection region.
- the inspection area data 225 is data for designating the inspection target area. In FIG. 8, the inspection target area is shown in white and the other areas are shown in two colors.
- the BSE image 250 generated by the BSE image generation unit 113 and the inspection area data 225 generated by the area extraction unit 0221 are ANDed (S302), and the inspection area ( 226) is set.
- the inspection area 226 is shown in gray and the outside of the inspection area is shown in black.
- the defect detection unit 0223 applies a preset threshold value (showing a setting method in the fifth embodiment) to the inspection region 226 set by the inspection region setting unit 0222 (S303). 227) is detected. Then, the feature amount calculation unit 0224 calculates feature amounts such as the position of the defect portion detected by the defect detection unit 0223, the luminance of the defect portion (luminance before binarization), and the area (S304).
- the embodiment described above is the basic configuration of the present invention. According to the present embodiment, it becomes possible to detect a defect in a deep hole, which could not be detected by a conventional electron beam inspection apparatus having an acceleration voltage of several kilovolts. For this purpose, acceleration voltage of 15 kV or more and low-angle BSE detection function effectively. Furthermore, since the SE image acquired at the same location having the same edge roughness is used as a reference, the problem of erroneously detecting edge roughness as a defect as shown in FIG. Inspection can be realized.
- the present embodiment is also effective for inspecting deep hole shape defects by the processing flow shown in FIG.
- FIG. 9 shows the flow of processing for inspecting the sample in which the eccentricity and the reduction of the hole diameter occur in the back of the deep hole by the comparison calculation unit 022.
- the formation defect at the back of the hole does not appear in the SE image 220, but the BSE image 260 reveals that the position displacement of the hole bottom and the size of the hole bottom diameter are small.
- the processes from S301 to S305 are the same as the steps described in FIG.
- the inspection area data 901 is obtained as a result of the area extraction process of S301 in the area extraction unit 0221, and the inspection is performed as a result of logical product in the processing of S302 in the inspection area setting unit 0222.
- a region image 902 is obtained.
- the threshold value processing is performed on the image 902 using the threshold value stored in the storage unit 021 in advance by the defect extraction unit 0223, thereby obtaining a binarized image 903 in which the defect is manifested.
- the feature amount calculation unit 0224 calculates the feature amount of the defect.
- the BSE image is inspected using the SE image as a reference, it is possible to quantitatively detect the eccentricity and the change in the hole diameter as the defect feature amount extracted by the feature amount calculation unit 0224 in S304. is there.
- the present embodiment is also effective for inspecting deep groove formation defects as shown in FIG.
- FIG. 10 shows a case where the groove is deformed at the corner of the deep groove pattern (for example, a partial depth of the groove is insufficient).
- the formation defect at the back of the groove does not appear in the SE image 270, but appears in the BSE image 280 as a pattern deformation 1010 at the groove bottom.
- the processes from S301 to S305 are the same as the steps described in FIG.
- inspection region data 1001 is obtained as a result of the region extraction processing in S301 in the region extraction unit 0221, and inspection is performed as a result of logical product in the processing in S302 in the inspection region setting unit 0222.
- a region image 1002 is obtained.
- the threshold value processing is performed on the image 1002 using the threshold value stored in advance in the storage unit 021 by the defect extraction unit 0223, thereby obtaining a binarized image 1003 in which the defect 1011 is made obvious.
- the feature amount calculation unit 0224 calculates the feature amount of the defect.
- the BSE image is inspected using the SE image as a reference, it is possible to quantitatively detect pattern formation defects.
- FIG. 11A and FIG. 11B show a second embodiment according to the present invention.
- the comparison operation unit (022 in FIG. 1) described in the first embodiment is replaced with a comparison operation unit 022-1 as shown in FIG. 11A. Since the configuration other than the comparison calculation unit 022-1 is the same as that described with reference to FIG. 1A in the first embodiment, the description thereof is omitted.
- the comparison operation unit 022-1 extracts an inspection region from the SE image obtained by the SE image generation unit 116, and the SE obtained by the SE image generation unit 116.
- a difference image generation unit 0225 that generates a difference image between the image and the image generated by the BSE image generation unit 113, an inspection region extracted by the region extraction unit 0221, and a difference image generated by the difference image generation unit 0225 are used to detect defects.
- a defect detection unit 0226 that performs detection and a feature amount calculation unit 0224 that calculates the feature amount of the defect detected by the defect detection unit 0226, and inputs / outputs information regarding the feature amount of the defect calculated by the feature amount calculation unit 0224 to and from the storage unit 021. Output to the unit 024.
- the input is the SE image and BSE image shown in FIGS. 4A and 4B, as in the first embodiment.
- the region extraction unit 0221 performs region extraction (S301) from the SE image to create the inspection region data 225 as in the first embodiment.
- the difference image generation unit 0225 generates a difference image 401 between the SE image 220 and the BSE image 250 (S305), and the defect detection unit 0226 calculates the difference image 401 and the inspection area data 225.
- a logical product is taken (S306), and a threshold value set in advance is applied to the image 402 obtained as a result, and binarization processing is performed to detect a defect 403 (S307).
- the feature amount calculation unit 0224 calculates the feature amount such as the position of the defect portion, the luminance of the defect portion (luminance before binarization), the area, etc. (S308), and stores information on the feature amount of the defect in the storage unit 021. And output to the input / output unit 024 (S309).
- the BSE image and the SE image are acquired at the same time, the change in luminance of the image due to the change in the amount of irradiation light is synchronized. Therefore, the luminance of the difference image does not change even if the irradiation light quantity changes.
- a threshold value is applied to the difference image, there is an advantage that the inspection sensitivity is not affected by the change in the amount of irradiation light.
- the inspection apparatus When the inspection apparatus is operated for a long time, the amount of irradiation light may fluctuate. However, in this embodiment, since the inspection sensitivity is not affected by this, it is possible to realize a more stable inspection.
- this embodiment is also effective for the inspection of defective formation of deep holes as shown in FIG. 9 and the inspection of defective formation of deep grooves as shown in FIG.
- FIG. 12A and FIG. 12B show a third embodiment according to the present invention.
- the comparison operation unit (022 in FIG. 1) described in the first embodiment is replaced with a comparison operation unit 022-2 as shown in FIG. 12A. Since the configuration other than the comparison calculation unit 022-2 is the same as that described with reference to FIG. 1A in the first embodiment, a description thereof will be omitted.
- the comparison operation unit 022-2 uses the SE image generated by the SE image generation unit 116 as an image of the in-hole region 411 inside the hole and the out-of-hole region outside the hole.
- An image dividing unit 0227 that divides the image 414 and the image 411 in the hole area divided by the image dividing unit 0227 and the BSE image generated by the BSE image generating unit 113 are calculated and the first inspection region is set.
- the second inspection region is set by taking the logical product of the image 414 of the non-hole region divided by the first inspection region setting unit 0228 and the image dividing unit 0229 and the BSE image generated by the BSE image generation unit 113.
- the second inspection area setting unit 0229, the first inspection area set by the first inspection area setting unit 0228 is threshold-processed to detect a defect in the hole
- the input is an SE image 220 and a BSE image 410 obtained by simultaneously imaging the same portion with the optical system shown in FIG. 1A.
- 421 is a defect in a hole
- 422 is an internal defect in a region outside the hole (defect not exposed on the surface). Neither is manifested in the SE image.
- region division is performed using the image dividing unit 0227SE image 220 (S310), and in-hole region data 411 and out-hole region data 414 are created.
- the region division by the image dividing unit 0227 may be performed using the relationship between the luminance in the SE image 220, the inside of the hole ⁇ the outside of the hole ⁇ the edge portion, and the ternary processing may be performed, or the high luminance of the edge portion may be used.
- the contour line may be extracted, and the region surrounded by the contour line may be defined as the in-hole region, and the region outside the contour line may be defined as the out-hole region.
- the first inspection area 412 is set for the BSE image by taking the logical product of the in-hole area data 411 and the BSE image 410 by the in-hole defect detection unit 02210 (S311).
- the outside of the inspection area is shown in black.
- the first inspection area 412 is binarized by applying a preset threshold value a to detect a defect 413 (S312).
- the second inspection region 415 is set for the BSE image by taking the logical product of the out-of-hole region data 414 and the BSE image 410 (S314).
- the outside of the inspection area is shown in black.
- the second inspection area 415 is binarized by applying a preset threshold value b to detect the defect 410 (S315).
- feature amounts such as the position of the defective portion, the luminance of the defective portion (luminance before binarization), and the area are calculated (S316) and output.
- this embodiment it is possible to detect defects inside and outside the hole with sensitivity suitable for each. Note that this embodiment is also effective for the inspection of deep hole formation defects as shown in FIG. 9 and the inspection of deep groove formation defects as shown in FIG.
- FIG. 13A to FIG. 13C show a fourth embodiment according to the present invention.
- the comparison operation unit (022 in FIG. 1) described in the first embodiment is replaced with a comparison operation unit 022-3 as shown in FIG. 13A. Since the configuration other than the comparison operation unit 022-3 is the same as that described with reference to FIG. 1A in the first embodiment, the description thereof is omitted.
- the comparison operation unit 022-3 extracts a region extraction unit 0221 and a region extraction unit 0221 that extract the inspection region from the SE image generated by the SE image generation unit 116.
- the inspection area setting unit 0222 for setting the inspection area from the inspection area extracted in step B and the BSE image generated by the BSE image generation unit 113, and the average value of the brightness of the BSE image in the inspection area set by the inspection area setting unit 0222
- a luminance average value / standard deviation calculation unit 02214 for obtaining a standard deviation
- a defect detection unit 02215 for detecting defects using information on the average value and standard deviation of the luminance of the BSE image obtained by the luminance average value / standard deviation calculation unit 02214
- a feature amount calculation unit 0224 that calculates the feature amount of the defect detected by the defect detection unit 02215 is provided.
- the input is the SE image and BSE image shown in FIGS. 4A and 4B, as in the first embodiment.
- the region extraction unit 0221 performs region extraction on the SE image (S301), creates inspection region data 225, and the inspection region setting unit 0222 obtains a logical product with the BSE image 250 and sets the inspection region 251 in the BSE image.
- Up to the setting (S302) is the same as that in the first embodiment.
- an area where the difference from the average brightness is three times the standard deviation or more is detected as a defect. That is, in the present embodiment, a singular region of brightness within the inspection region is detected as a defect. If the brightness of the entire area in the inspection area changes uniformly, it does not become a defect.
- the feature amount calculation unit 0224 calculates feature amounts such as the position of the detected defect portion, the luminance of the defect portion (luminance before binarization), and the area (S323), and information about the feature amount of the defect is obtained.
- the data is output to the storage unit 021 and the input / output unit 024 (S324).
- the threshold value is automatically adjusted following the overall luminance change, which is advantageous for detecting a defect that appears as a local luminance change in the inspection region. .
- the present embodiment is also effective for inspection of defective formation of deep holes as shown in FIG. 9 and inspection of defective formation of deep grooves as shown in FIG.
- FIG. 14 shows a fifth embodiment according to the present invention.
- This embodiment is a user interface 500 for setting inspection conditions.
- the defect determination mode is selected at 501.
- difference image the SE image is used as a reference, and the difference image between the BSE image and the SE image is set as an inspection target (see Example 2).
- BSE image the mode is a mode in which the SE image is used as a reference and the BSE image is used as an inspection target (see Examples 1, 3, and 4).
- the difference image mode is selected.
- the screen includes a BSE image (502), an SE image (505), a difference image between the BSE image and the SE image (503), an inspection area (506) created from the SE image, and an overlay of the difference image and the inspection area (504).
- the defect detection result (507) is displayed.
- the user can adjust the threshold value for creating the inspection region from the SE image with the slider 506 while checking the result of the action. It is also possible to adjust the threshold value for defect detection while confirming the result of the action with the slider 509.
- FIG. 15 shows a schematic configuration of an electron beam pattern inspection apparatus 800 in the present embodiment. The same parts as those in the electron beam pattern inspection apparatus 100 described in FIG.
- the electron beam pattern inspection apparatus 100 in Example 1 of FIG. 1A has a configuration using the annular scintillator 106 and the photomultiplier tube 115 as detectors, but the electron in this example shown in FIG.
- the linear pattern inspection apparatus 800 includes an E ⁇ B deflector 117 that bends the trajectory of reflected electrons generated from the sample 200 in the optical axis direction (vertical direction) of the primary electron beam 102, and E The point which provided the upper detector 118 which detects the reflected electron 120 by which the orbit was bent by * B deflector 117, and the upper BSE image generation part 119 which processes the detection signal of this upper detector 118, and produces
- the method of inspecting the sample 200 using the electron beam pattern inspection apparatus 800 in the present embodiment is basically the same as the method described in the first embodiment, but S304 of the processing flow described in FIG.
- the defect feature amount calculation process is different.
- the luminance information of the upper BSE image generated by the upper BSE image generator 119 may be a relationship between the luminance information of the upper BSE image generated by the upper BSE image generator 119 and the material of the region irradiated with the primary electron beam 102 of the sample 200. Therefore, in this embodiment, various materials of a known type that may exist on the sample 200 are irradiated with the primary electron beam 102 and the reflected electrons are detected by the upper detector 118 to generate an upper BSE image.
- the brightness information of the BSE image generated by the unit 119 is stored in advance in the database.
- luminance information is extracted from the BSE image generated by the upper BSE image generation unit 119, and the extracted luminance information is collated with a database.
- the material (material) of the defect can be specified.
- the position of the defect portion, the luminance of the defect portion (luminance before binarization), and the area In addition to the feature quantities such as, it is also possible to obtain information on the material (material) of the defect.
- the defect material information is also obtained as a feature of the defect, it is possible to identify the defect generation process and the cause of occurrence in a shorter time than in the past.
- FIGS. 16A and 16D are schematic views of a normal hole 801 and a hole 802 in which bending is generated in the sample 1610, respectively. Sectional views (FIGS. 16A, 16D), SE images (FIGS. 16B, 16E), and BSE images (FIGS. 16C, 16F) of the hole portion from the top.
- the calculation contents in the comparison calculation section (022 in FIG. 1) described in the first embodiment are replaced with the calculation contents shown in FIG. Since the configuration other than the comparison operation unit is the same as that described with reference to FIG. 1A in the first embodiment, the description thereof is omitted.
- the inputs are the SE image 812 of FIG. 16D shown in FIG. 16E and the BSE image 813 of FIG. 16D shown in FIG. 16F.
- FIG. 17B first, pattern areas of the SE image 812 in FIG. 16E and the BSE image 813 in FIG. 16F are extracted (S321, S331), and the SE pattern 8121 and the BSE pattern 8131 are extracted.
- the pattern is white and the background is black.
- the region extraction method is the same as the pattern region extraction in the first embodiment.
- dx and dy are deviations of the pattern center 8132 of the BSE image from the pattern center 8122 of the SE image. This is an index that represents the direction and size of bending.
- distances (L1 to L8) in each direction from the pattern center 8122 of the SE image to the BSE pattern edge 8100 may be calculated. When there is no bending, L1 to L8 have substantially the same value, but when bending occurs, the values of L1 to L8 vary depending on the direction of bending.
- the SE pattern 8200 and the BSE pattern 8100 are compared (S342), a difference image 8140 is generated, and the distance between edges (t1) in each direction as shown in FIG. 17C in S343. To t8) may be calculated.
- t1 to t8 correspond to the taper width in each direction.
- t1 to t8 when there is no bending, t1 to t8 have substantially the same value. However, when bending has occurred, the magnitude varies depending on the direction of bending. Arise. According to the present embodiment, quantitative inspection of bending can be performed.
- the eighth embodiment according to the present invention is another bending detection method using the characteristic that the bending becomes apparent only in the BSE image, as in the seventh embodiment. Since the configuration other than the comparison operation unit is the same as that described with reference to FIG. 1A in the first embodiment, the description thereof is omitted.
- the processing flow in the comparison operation unit is shown in FIG. 18A.
- the inputs are the SE image 812 of the hole 1602 in FIG. 16D shown in FIG. 16E and the BSE image 813 shown in FIG. 16F.
- edge detection is performed using an image profile (S351, S361).
- image profile S351, S361.
- Various methods can be applied to the edge detection. As a specific example, the case where the “threshold method” is applied is shown in FIGS. 18B to 18E.
- FIG. 18C shows the edge detection of the SE image 812 shown in FIG. 18B
- the profile 1802 of FIG. 18E shows the edge detection of the BSE image 813 shown in FIG. 18D.
- Max 1811, 1812, Min 1821, and 1822 of the waveform are detected, and internal values of these appropriate ratios are calculated as threshold values 1831 and 1832, and threshold values 1831 and 1832 and profiles 1801 and 1802 are calculated. This is a method using the intersections 1841 and 1842 as the edge points.
- profiles 1811 and 1812 in each direction are generated from the images 812 and 813, and edges are formed in the profiles 1811 and 1812.
- an edge point sequence conforming to the pattern shape such as 815 and 816 in FIG. 18A can be obtained.
- the feature amount such as the pattern center is calculated from the edge point sequence (S322, S332), and the bending feature amount is calculated (S333).
- This embodiment relates to a composite image generation method suitable for a user to review an inspection result.
- the object of the present embodiment is to generate an observation image so that the positional relationship between the pattern of the SE image and the BSE image can be understood at a glance.
- FIG. 19A shows a flow of composite image generation.
- the input is an SE image 812 and a BSE image 813.
- the region corresponding to the inside of the hole is extracted by binarization or the like. Extract (S321).
- the in-hole region is shown in white, and the others are shown in black.
- image synthesis is performed in which the BSE image is inserted into the in-hole area and the SE image is inserted into the other area (S350), and a synthesized image 817 is generated.
- the brightness of each image is adjusted (offset adjustment, contrast adjustment) in consideration of visibility, and the blend ratio of both images near the boundary is set so that the seam of the images becomes more natural. You may make it change in steps. Alternatively, edge enhancement processing may be performed.
- this embodiment is also effective for reviewing defect detection results other than bending as shown in FIGS.
- FIG. 19B shows an example of the inspection result review screen 1900.
- an SE image (812), a BSE image (813), and a composite image (817) are displayed, and various feature amounts are displayed as a list as inspection results (900, 901, 902).
- the average values (tabs Avg.) 920 to 922 are displayed in addition to the feature amounts (tabs 1 to 6) 910 to 912 of the individual patterns.
- “Eccentricity (x)” 9121 of the list display 902 is dx in FIG. 17C
- “Eccentricity (y)” 9122 is dy in FIG. 17C
- “Eccentric distance” 9123 is the square root of dx 2 + dy 2
- “Eccentric angle” 9124 is tan ⁇ 1 (dy / dx)
- “direction-specific edge width” 9125 is t1 to t8 in FIG. 17D.
- the processing content in the comparison operation unit (022 in FIG. 15) described in the sixth embodiment is replaced with the processing content shown in FIG.
- the bending inspection is performed using the SE image 812 and the BSE image 813.
- the high-angle BSE image 814 and the SE image 812 generated by the upper BSE generation unit in FIG. Conduct a bending inspection using.
- the inspection using the SE image 812 and the BSE image 813 in FIG. 20 is the same as the inspection described in FIG. 17B, and the first bending feature amount is calculated using the pattern feature amounts of the SE image 812 and the BSE image 813. (S333).
- the pattern feature amount of the high-angle BSE image 814 and the SE image 812 is further calculated (S342), and the second bending feature amount is calculated using the calculated pattern feature amount (S343).
- the calculated first bending feature value and the second bending feature value calculated in S343 are integrated to obtain a final output (S344).
- the average value of the first bending feature value and the second bending feature value may be obtained, or defective only when both the first bending feature value and the second bending feature value exceed the reference value. It may be used as such.
- FIG. 20 the two processes in FIG. 17B are provided. Instead, the two processes in FIG. 18A may be provided.
- 021 Storage unit 022, 022-1, 022-2, 022-3 ... Comparison operation unit 023 ... Control unit 024 ... I / O unit 101 ... Electron gun 103 ... Condenser lens 104 ... deflector 105 ... objective lens 106 ... low-angle BSE detection annular scintillator 108 ... stage 111 ... optical fiber 112 ... photomultiplier tube 113 ... BSE image generator 115 ... Photomultiplier tube 200 ... Sample 0221 ... Area extraction part 0222 ... Inspection area setting part 0223, 0226 ... Defect detection part 0224 ... Feature quantity calculation part 0225 ... Difference Image generation unit 0227 ... image division unit 0228 ... first inspection area setting unit 02 9 ... second inspection region setting unit 02210 ... hole defect detector 02211 ... Anagai defect detector 02212 ... hole defect feature quantity calculation unit 02213 ... Anagai defect feature amount calculation unit.
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Abstract
Description
以下、本発明の実施例を図面を用いて説明する。
図5Aは,SE像による穴観察を示し,図5BはBSE像による穴観察の状況を模式的に表す図である。図5Aにおいて、試料200には上層膜201と下層膜202が形成されており、上層膜201にアスペクト比が比較的高い穴203が形成されている状態の断面図を示している。SE像で穴内の欠陥が顕在化しないのは,図5Aに示すように、穴203内で発生した二次電子114のほとんどが,穴側壁204に当たって吸収され消滅してしまうからである。
まず,領域抽出部0221において、SE像生成部116で作成したSE像220を用いて領域抽出を行い(S301),検査領域データ225を作成する。SE像では穴部の輝度が穴外やエッジ部よりも十分に低いので,2値化により暗領域を抽出して,これを検査領域とする。エッジ部の輝度が高いことを利用して,輪郭線を抽出して,輪郭線が囲む領域を検査領域としても良い。検査領域データ225は,検査対象領域を指定するデータであるが,図8においては,検査対象領域を白,それ以外を黒の2色で示した。
図9は,深穴の奥において,偏心および穴径の縮小が起こっている試料を比較演算部022で検査する処理の流れを示す。穴奥の形成不良はSE像220には現れないが,BSE像260には,穴底の位置ずれ,および,穴底径の寸法が小さいことが顕在化される。図9のフローにて,S301からS305までの工程は図8で説明した各ステップと同じ処理を行う。
図10は,深溝パターンの角部において,溝が変形している(溝の部分的な深さ不足など)ケースである。溝奥の形成不良はSE像270には現れないが,BSE像280には,溝底のパターン変形1010として顕在化される。図10のフローにて,S301からS305までの工程は図8で説明した各ステップと同じ処理を行う。
なお,本実施の形態は,図9のような深穴の形成不良の検査,図10のような深溝の形成不良の検査にも有効である。
しきい値=avg+r×σ ・・・(数1)
ここでrは,予め設定した分散値に乗ずる係数である。
本実施例によれば、ベンディングの定量的な検査が可能となる。
Claims (14)
- 収束させた電子ビームをパターンが形成された試料に照射する電子ビーム照射部と、
前記電子ビーム照射部により収束させた電子ビームが照射された前記試料から発生した比較的エネルギが高い反射電子を検出する反射電子検出部と、
前記電子ビーム照射部により収束させた電子ビームが照射された前記試料から発生した比較的エネルギが低い二次電子を検出する二次電子検出部と、
前記反射電子検出部で反射電子を検出して得た信号から反射電子像を生成する反射電子像生成部と、
前記二次電子検出部で二次電子を検出して得た信号から二次電子像を生成する二次電子像生成部と、
前記反射電子像生成部で生成した反射電子像と前記二次電子像生成部で生成した二次電子像とを処理して前記試料の欠陥を検出する演算部と
を備えた電子線式パターン検査装置であって、
前記演算部は、
前記二次電子像から検査領域を抽出する検査領域抽出部と、
前記反射電子像を用いて前記検査領域抽出部で抽出した検査領域に対応する領域を設定して前記設定した領域を検査して欠陥を検出する欠陥検出部と
を有することを特徴とする電子線式パターン検査装置。 - 請求項1記載の電子線式パターン検査装置であって、前記演算部は、前記欠陥検出部で検出した欠陥の特徴量を算出する特徴量算出部を更に有することを特徴とする電子線式パターン検査装置。
- 請求項1記載の電子線式パターン検査装置であって、前記演算部は、前記反射電子像と前記二次電子像との差画像を作成する差画像生成部を更に有し、前記欠陥検出部は前記差画像生成部で生成した差画像について前記検査領域抽出部で抽出した検査領域に対応する領域を設定して前記設定した領域を検査して欠陥を検出することを特徴とする電子線式パターン検査装置。
- 請求項1記載の電子線式パターン検査装置であって、前記演算部の検査領域抽出部は、前記二次電子像からパターン内部の検査領域とパターン外部の検査領域とを設定し、前記欠陥検出部は、前記反射電子像に対して前記二次電子像を用いて設定した前記パターン内部の検査領域と前記パターン外部の検査領域とをそれぞれ検査して欠陥を検出することを特徴とする電子線式パターン検査装置。
- 請求項1記載の電子線式パターン検査装置であって、前記演算部の欠陥検出部は、前記反射電子像の明るさの情報を用いて欠陥検出のしきい値を設定し、前記設定したしきい値を用いて前記反射電子像から欠陥を検出することを特徴とする電子線式パターン検査装置。
- 請求項1記載の電子線式パターン検査装置であって、前記反射電子検出部は、前記電子ビームが照射された前記試料から発生した反射電子のうち、前記電子ビームに対して斜め方向に発生した反射電子を検出する第1の反射電子検出器と、前記電子ビームに沿った方向に発生した反射電子を検出する第2に反射電子検出器を備えたことを特徴とする電子線式パターン検査装置。
- 基板上に形成された深穴ないし深溝パターンを検査するシステムであって,
収束させた電子ビームを試料に照射する電子ビーム照射部と、
前記電子ビームが照射された前記試料から発生した比較的エネルギが高い反射電子と,比較的エネルギが低い二次電子を同時に取得する,反射電子検出部,および,二次電子検出部と,
前記反射電子検出部で反射電子を検出して得た信号から反射電子像を生成する反射電子像生成部と、
前記二次電子検出部で二次電子を検出して得た信号から二次電子像を生成する二次電子像生成部と、
前記反射電子像と,前記二次電子像の画像間の比較により,差異を検出する演算部を有すことを特徴とする。 - 請求項7記載の電子線式パターン検査装置であって、前記演算部は、前記二次電子像のパターンエッジ位置に対する,前記反射電子像のパターンエッジ位置のずれ量を算出することを特徴とする。
- 請求項7記載の電子線式パターン検査装置であって、前記演算部は、前記二次電子像のパターンの中心位置に対する,前記反射電子像のパターンの中心位置のずれ量を算出することを特徴とする。
- 請求項7記載の電子線式パターン検査装置であって、前記演算部は、前記二次電子像と前記反射電子像の合成像を生成する画像合成部を更に有することを特徴とする電子線式パターン検査装置。
- 基板上に形成された深穴ないし深溝パターンを検査するシステムであって,
収束させた電子ビームを試料に照射する電子ビーム照射部と、
前記電子ビームが照射された前記試料から発生した比較的エネルギが高い反射電子のうち低い天頂角成分と,比較的エネルギが高い反射電子のうち高い天頂角成分と,比較的エネルギが低い二次電子を同時に取得する,それぞれ,第1の反射電子検出部,および,第2の反射電子検出部,および,二次電子検出部と
前記第1の反射電子検出部で反射電子を検出して得た信号から第1の反射電子像を生成する第1の反射電子像生成部と、
前記第2の反射電子検出部で反射電子を検出して得た信号から第2の反射電子像を生成する第2の反射電子像生成部と、
前記二次電子検出部で二次電子を検出して得た信号から二次電子像を生成する二次電子像生成部と、
前記第1の反射電子像と,前記第2の反射電子像と前記二次電子像の画像間の比較により,差異を検出する演算部を有すことを特徴とする。 - 請求項11記載の電子線式パターン検査装置であって、前記演算部は、前記二次電子像のパターンエッジ位置に対する,前記第1の反射電子像のパターンエッジ位置のずれ量,および,前記二次電子像のパターンエッジ位置に対する,前記第2の反射電子像のパターンエッジ位置のずれ量を算出することを特徴とする。
- 請求項11記載の電子線式パターン検査装置であって、前記演算部は、前記二次電子像のパターンの重心位置に対する,前記第1の反射電子像のパターンの中心位置のずれ量,および,前記二次電子像のパターンの中心位置に対する前記第2の反射電子像のパターンの中心位置のずれ量を算出することを特徴とする。
- 請求項11記載の電子線式パターン検査装置であって、前記演算部は、前記二次電子像と前記第1の反射電子像と前記第2の反射電子像の合成像を生成する画像合成部を更に有することを特徴とする電子線式パターン検査装置。
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