JP6916877B2 - 貼り合わせウエハの計測 - Google Patents

貼り合わせウエハの計測 Download PDF

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Publication number
JP6916877B2
JP6916877B2 JP2019524901A JP2019524901A JP6916877B2 JP 6916877 B2 JP6916877 B2 JP 6916877B2 JP 2019524901 A JP2019524901 A JP 2019524901A JP 2019524901 A JP2019524901 A JP 2019524901A JP 6916877 B2 JP6916877 B2 JP 6916877B2
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Japan
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wafer
edge profile
line segment
vertical line
image
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Japanese (ja)
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JP2019537263A5 (enExample
JP2019537263A (ja
Inventor
カウシック サー
カウシック サー
トマス クラー
トマス クラー
シーファン リー
シーファン リー
ハイコ アイゼンバッハ
ハイコ アイゼンバッハ
モリッツ ストーリング
モリッツ ストーリング
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KLA Corp
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KLA Corp
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Publication of JP2019537263A5 publication Critical patent/JP2019537263A5/ja
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2433—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring outlines by shadow casting
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/13—Edge detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • G06T7/73—Determining position or orientation of objects or cameras using feature-based methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20048—Transform domain processing
    • G06T2207/20061—Hough transform
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Quality & Reliability (AREA)
  • Geometry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
JP2019524901A 2016-11-29 2017-11-27 貼り合わせウエハの計測 Active JP6916877B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662427373P 2016-11-29 2016-11-29
US62/427,373 2016-11-29
US15/627,834 2017-06-20
US15/627,834 US10540759B2 (en) 2016-11-29 2017-06-20 Bonded wafer metrology
PCT/US2017/063310 WO2018102260A1 (en) 2016-11-29 2017-11-27 Bonded wafer metrology

Publications (3)

Publication Number Publication Date
JP2019537263A JP2019537263A (ja) 2019-12-19
JP2019537263A5 JP2019537263A5 (enExample) 2021-01-14
JP6916877B2 true JP6916877B2 (ja) 2021-08-11

Family

ID=62190293

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019524901A Active JP6916877B2 (ja) 2016-11-29 2017-11-27 貼り合わせウエハの計測

Country Status (7)

Country Link
US (1) US10540759B2 (enExample)
EP (1) EP3507826B1 (enExample)
JP (1) JP6916877B2 (enExample)
KR (1) KR102301552B1 (enExample)
CN (1) CN109964307B (enExample)
TW (1) TWI731197B (enExample)
WO (1) WO2018102260A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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EP4657010A1 (en) 2023-03-14 2025-12-03 Kobelco Research Institute, Inc. Device and method for measuring positional displacement amount of laminated substrate, and semiconductor manufacturing device

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CN110488751B (zh) * 2018-08-29 2022-08-19 中山大学 一种自动化工艺线的石墨料盘视觉定位系统
KR102840203B1 (ko) 2020-09-01 2025-08-01 삼성전자주식회사 기판 정렬 장치 및 이를 구비하는 기판 본딩 설비
JP7682654B2 (ja) * 2021-03-11 2025-05-26 株式会社岡本工作機械製作所 半導体装置の製造方法及び製造装置
IL304714B2 (en) * 2021-04-19 2025-03-01 Kla Corp Edge profile inspection for delamination defects
US12131454B2 (en) * 2021-09-15 2024-10-29 Onto Innovation, Inc. Substrate mapping using deep neural-networks
CN115661143B (zh) * 2022-12-14 2023-05-30 惠州威尔高电子有限公司 用于MiniLED晶圆缺陷的快速检测系统
CN116313971B (zh) * 2023-05-17 2023-10-20 拓荆键科(海宁)半导体设备有限公司 通过边缘检测来进行晶圆键合对准的方法
US20250086780A1 (en) * 2023-09-12 2025-03-13 Kla Corporation Concentricity offset measurement for hybrid bonding

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JP2002050749A (ja) * 2000-07-31 2002-02-15 Canon Inc 複合部材の分離方法及び装置
JP4533563B2 (ja) * 2001-07-13 2010-09-01 株式会社東芝 パターン評価方法，位置合わせ方法、検査装置の検査方法，半導体製造工程の管理方法
JP3629244B2 (ja) 2002-02-19 2005-03-16 本多エレクトロン株式会社 ウエーハ用検査装置
JP2007501942A (ja) 2003-05-19 2007-02-01 マイクロ−エプシロン・メステヒニク・ゲーエムベーハー・ウント・コンパニー・カー・ゲー 好適に円形エッジを有する物体の品質を光学的に制御する光学的試験方法及び光学的試験装置
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JP4585926B2 (ja) 2005-06-17 2010-11-24 株式会社日立ハイテクノロジーズ パターンレイヤーデータ生成装置、それを用いたパターンレイヤーデータ生成システム、半導体パターン表示装置、パターンレイヤーデータ生成方法、及びコンピュータプログラム
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4657010A1 (en) 2023-03-14 2025-12-03 Kobelco Research Institute, Inc. Device and method for measuring positional displacement amount of laminated substrate, and semiconductor manufacturing device

Also Published As

Publication number Publication date
EP3507826A4 (en) 2020-04-15
TW201828254A (zh) 2018-08-01
WO2018102260A1 (en) 2018-06-07
CN109964307A (zh) 2019-07-02
US20180150952A1 (en) 2018-05-31
EP3507826B1 (en) 2025-05-28
CN109964307B (zh) 2023-03-10
KR102301552B1 (ko) 2021-09-13
EP3507826A1 (en) 2019-07-10
KR20190082947A (ko) 2019-07-10
TWI731197B (zh) 2021-06-21
US10540759B2 (en) 2020-01-21
JP2019537263A (ja) 2019-12-19

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