KR102301552B1 - 본딩된 웨이퍼 계측 - Google Patents

본딩된 웨이퍼 계측 Download PDF

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KR102301552B1
KR102301552B1 KR1020197017836A KR20197017836A KR102301552B1 KR 102301552 B1 KR102301552 B1 KR 102301552B1 KR 1020197017836 A KR1020197017836 A KR 1020197017836A KR 20197017836 A KR20197017836 A KR 20197017836A KR 102301552 B1 KR102301552 B1 KR 102301552B1
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KR20190082947A (ko
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카우쉭 사
토마스 크라
쉬팡 리
하이코 아이젠바흐
모리쯔 스퇴링
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/2433—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures for measuring outlines by shadow casting
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/13—Edge detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • G06T7/73—Determining position or orientation of objects or cameras using feature-based methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/20—Special algorithmic details
    • G06T2207/20048—Transform domain processing
    • G06T2207/20061—Hough transform
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Quality & Reliability (AREA)
  • Geometry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
KR1020197017836A 2016-11-29 2017-11-27 본딩된 웨이퍼 계측 Active KR102301552B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662427373P 2016-11-29 2016-11-29
US62/427,373 2016-11-29
US15/627,834 2017-06-20
US15/627,834 US10540759B2 (en) 2016-11-29 2017-06-20 Bonded wafer metrology
PCT/US2017/063310 WO2018102260A1 (en) 2016-11-29 2017-11-27 Bonded wafer metrology

Publications (2)

Publication Number Publication Date
KR20190082947A KR20190082947A (ko) 2019-07-10
KR102301552B1 true KR102301552B1 (ko) 2021-09-13

Family

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KR1020197017836A Active KR102301552B1 (ko) 2016-11-29 2017-11-27 본딩된 웨이퍼 계측

Country Status (7)

Country Link
US (1) US10540759B2 (enExample)
EP (1) EP3507826B1 (enExample)
JP (1) JP6916877B2 (enExample)
KR (1) KR102301552B1 (enExample)
CN (1) CN109964307B (enExample)
TW (1) TWI731197B (enExample)
WO (1) WO2018102260A1 (enExample)

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CN110488751B (zh) * 2018-08-29 2022-08-19 中山大学 一种自动化工艺线的石墨料盘视觉定位系统
KR102840203B1 (ko) 2020-09-01 2025-08-01 삼성전자주식회사 기판 정렬 장치 및 이를 구비하는 기판 본딩 설비
JP7682654B2 (ja) * 2021-03-11 2025-05-26 株式会社岡本工作機械製作所 半導体装置の製造方法及び製造装置
IL304714B2 (en) * 2021-04-19 2025-03-01 Kla Corp Edge profile inspection for delamination defects
US12131454B2 (en) * 2021-09-15 2024-10-29 Onto Innovation, Inc. Substrate mapping using deep neural-networks
CN115661143B (zh) * 2022-12-14 2023-05-30 惠州威尔高电子有限公司 用于MiniLED晶圆缺陷的快速检测系统
JP2024130368A (ja) 2023-03-14 2024-09-30 株式会社コベルコ科研 貼合せ基板の位置ずれ量測定装置および該方法ならびに半導体製造装置
CN116313971B (zh) * 2023-05-17 2023-10-20 拓荆键科(海宁)半导体设备有限公司 通过边缘检测来进行晶圆键合对准的方法
US20250086780A1 (en) * 2023-09-12 2025-03-13 Kla Corporation Concentricity offset measurement for hybrid bonding

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US20120195490A1 (en) 2010-04-11 2012-08-02 Eldad Langmans Method and system for wafer registration
US20130139950A1 (en) 2011-12-02 2013-06-06 Kobelco Research Institute, Inc. Rotational misalignment measuring device of bonded substrate, rotational misalignment measuring method of bonded substrate, and method of manufacturing bonded substrate
WO2016152582A1 (ja) 2015-03-20 2016-09-29 株式会社日立ハイテクノロジーズ 電子線式パターン検査装置

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JP2002050749A (ja) * 2000-07-31 2002-02-15 Canon Inc 複合部材の分離方法及び装置
JP4533563B2 (ja) * 2001-07-13 2010-09-01 株式会社東芝 パターン評価方法，位置合わせ方法、検査装置の検査方法，半導体製造工程の管理方法
JP3629244B2 (ja) 2002-02-19 2005-03-16 本多エレクトロン株式会社 ウエーハ用検査装置
JP2007501942A (ja) 2003-05-19 2007-02-01 マイクロ−エプシロン・メステヒニク・ゲーエムベーハー・ウント・コンパニー・カー・ゲー 好適に円形エッジを有する物体の品質を光学的に制御する光学的試験方法及び光学的試験装置
US7340087B2 (en) 2003-07-14 2008-03-04 Rudolph Technologies, Inc. Edge inspection
JP4500157B2 (ja) 2004-11-24 2010-07-14 株式会社神戸製鋼所 形状計測装置用光学系
JP4585926B2 (ja) 2005-06-17 2010-11-24 株式会社日立ハイテクノロジーズ パターンレイヤーデータ生成装置、それを用いたパターンレイヤーデータ生成システム、半導体パターン表示装置、パターンレイヤーデータ生成方法、及びコンピュータプログラム
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US20120195490A1 (en) 2010-04-11 2012-08-02 Eldad Langmans Method and system for wafer registration
US20130139950A1 (en) 2011-12-02 2013-06-06 Kobelco Research Institute, Inc. Rotational misalignment measuring device of bonded substrate, rotational misalignment measuring method of bonded substrate, and method of manufacturing bonded substrate
WO2016152582A1 (ja) 2015-03-20 2016-09-29 株式会社日立ハイテクノロジーズ 電子線式パターン検査装置

Also Published As

Publication number Publication date
EP3507826A4 (en) 2020-04-15
TW201828254A (zh) 2018-08-01
WO2018102260A1 (en) 2018-06-07
CN109964307A (zh) 2019-07-02
JP6916877B2 (ja) 2021-08-11
US20180150952A1 (en) 2018-05-31
EP3507826B1 (en) 2025-05-28
CN109964307B (zh) 2023-03-10
EP3507826A1 (en) 2019-07-10
KR20190082947A (ko) 2019-07-10
TWI731197B (zh) 2021-06-21
US10540759B2 (en) 2020-01-21
JP2019537263A (ja) 2019-12-19

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