TWI724495B - 固晶裝置及半導體裝置的製造方法 - Google Patents

固晶裝置及半導體裝置的製造方法 Download PDF

Info

Publication number
TWI724495B
TWI724495B TW108129073A TW108129073A TWI724495B TW I724495 B TWI724495 B TW I724495B TW 108129073 A TW108129073 A TW 108129073A TW 108129073 A TW108129073 A TW 108129073A TW I724495 B TWI724495 B TW I724495B
Authority
TW
Taiwan
Prior art keywords
axis direction
waveform
aforementioned
vibration
head
Prior art date
Application number
TW108129073A
Other languages
English (en)
Chinese (zh)
Other versions
TW202025314A (zh
Inventor
楯充明
Original Assignee
日商捷進科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商捷進科技有限公司 filed Critical 日商捷進科技有限公司
Publication of TW202025314A publication Critical patent/TW202025314A/zh
Application granted granted Critical
Publication of TWI724495B publication Critical patent/TWI724495B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
TW108129073A 2018-09-19 2019-08-15 固晶裝置及半導體裝置的製造方法 TWI724495B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018174833A JP7128697B2 (ja) 2018-09-19 2018-09-19 ダイボンディング装置および半導体装置の製造方法
JP2018-174833 2018-09-19

Publications (2)

Publication Number Publication Date
TW202025314A TW202025314A (zh) 2020-07-01
TWI724495B true TWI724495B (zh) 2021-04-11

Family

ID=69848723

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108129073A TWI724495B (zh) 2018-09-19 2019-08-15 固晶裝置及半導體裝置的製造方法

Country Status (4)

Country Link
JP (1) JP7128697B2 (enExample)
KR (1) KR102276898B1 (enExample)
CN (2) CN110931366B (enExample)
TW (1) TWI724495B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115623697B (zh) * 2022-12-06 2023-04-07 常州铭赛机器人科技股份有限公司 芯片贴装机构

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040016995A1 (en) * 2002-07-25 2004-01-29 Kuo Shun Meen MEMS control chip integration
US20070290282A1 (en) * 2006-06-15 2007-12-20 Nanochip, Inc. Bonded chip assembly with a micro-mover for microelectromechanical systems
TW201409596A (zh) * 2012-07-26 2014-03-01 Nitto Denko Corp 半導體晶圓的安裝方法及半導體晶圓的安裝裝置
US20150001707A1 (en) * 2013-06-28 2015-01-01 Stats Chippac, Ltd. Semiconductor Device and Method of Using Substrate With Conductive Posts and Protective Layers to Form Embedded Sensor Die Package
TW201539590A (zh) * 2014-03-13 2015-10-16 史達晶片有限公司 半導體裝置及形成微機電系統封裝的方法
TW201540809A (zh) * 2014-03-31 2015-11-01 日東電工股份有限公司 黏晶（ｄｉｅ ｂｏｎｄ）薄膜、附有切割片之黏晶薄膜、半導體裝置、及半導體裝置之製造方法
TW201545886A (zh) * 2014-01-27 2015-12-16 Corning Inc 用於薄片與載體之受控制接合的物件及方法
US20170110599A1 (en) * 2011-09-15 2017-04-20 STATS ChipPAC Pte. Ltd. Semiconductor Device and Method of Forming Semiconductor Die with Active Region Responsive to External Stimulus
TW201725492A (zh) * 2015-12-24 2017-07-16 摩達伊諾琴股份有限公司 複合裝置以及包含該複合裝置的電子裝置
TW201825298A (zh) * 2016-08-31 2018-07-16 日商半導體能源研究所股份有限公司 半導體裝置的製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003224143A (ja) * 2002-01-30 2003-08-08 Toray Eng Co Ltd 姿勢制御方法および装置並びにその装置を用いた接合装置
US7311004B2 (en) * 2003-03-10 2007-12-25 Capstan Ag Systems, Inc. Flow control and operation monitoring system for individual spray nozzles
US20040204777A1 (en) * 2003-04-14 2004-10-14 Alon Harpaz Precision motion control using feed forward of acceleration
JP2005340780A (ja) * 2004-04-27 2005-12-08 Matsushita Electric Ind Co Ltd 電子部品装着装置および電子部品装着方法
US9802225B2 (en) * 2005-06-27 2017-10-31 General Vibration Corporation Differential haptic guidance for personal navigation
EP2075534A4 (en) * 2007-09-19 2013-05-29 Murata Manufacturing Co COMPOSITE SENSOR AND ACCELERATION SENSOR
JP5652155B2 (ja) * 2010-11-24 2015-01-14 セイコーエプソン株式会社 振動片、センサーユニット、電子機器、振動片の製造方法、および、センサーユニットの製造方法
JP5320420B2 (ja) 2011-02-18 2013-10-23 株式会社日立ハイテクインスツルメンツ モータ制御装置およびモータ制御方法
JP5713787B2 (ja) 2011-04-28 2015-05-07 芝浦メカトロニクス株式会社 電子部品の実装装置
JP5705052B2 (ja) * 2011-07-26 2015-04-22 株式会社新川 ダイボンディング装置
US9162880B2 (en) * 2012-09-07 2015-10-20 LuxVue Technology Corporation Mass transfer tool
KR20140118792A (ko) * 2013-03-29 2014-10-08 세이코 엡슨 가부시키가이샤 진동 소자, 진동자, 발진기, 전자 기기, 센서, 및 이동체
JP6276545B2 (ja) * 2013-09-18 2018-02-07 ファスフォードテクノロジ株式会社 ダイボンダ
JP6337395B2 (ja) * 2014-05-09 2018-06-06 パナソニックＩｐマネジメント株式会社 入出力操作装置
JP6247965B2 (ja) 2014-03-12 2017-12-13 ファスフォードテクノロジ株式会社 半導体製造方法及びダイボンダ
JP6374189B2 (ja) 2014-03-17 2018-08-15 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040016995A1 (en) * 2002-07-25 2004-01-29 Kuo Shun Meen MEMS control chip integration
US20070290282A1 (en) * 2006-06-15 2007-12-20 Nanochip, Inc. Bonded chip assembly with a micro-mover for microelectromechanical systems
US20170110599A1 (en) * 2011-09-15 2017-04-20 STATS ChipPAC Pte. Ltd. Semiconductor Device and Method of Forming Semiconductor Die with Active Region Responsive to External Stimulus
TW201409596A (zh) * 2012-07-26 2014-03-01 Nitto Denko Corp 半導體晶圓的安裝方法及半導體晶圓的安裝裝置
US20150001707A1 (en) * 2013-06-28 2015-01-01 Stats Chippac, Ltd. Semiconductor Device and Method of Using Substrate With Conductive Posts and Protective Layers to Form Embedded Sensor Die Package
TW201545886A (zh) * 2014-01-27 2015-12-16 Corning Inc 用於薄片與載體之受控制接合的物件及方法
TW201539590A (zh) * 2014-03-13 2015-10-16 史達晶片有限公司 半導體裝置及形成微機電系統封裝的方法
TW201540809A (zh) * 2014-03-31 2015-11-01 日東電工股份有限公司 黏晶（ｄｉｅ ｂｏｎｄ）薄膜、附有切割片之黏晶薄膜、半導體裝置、及半導體裝置之製造方法
TW201725492A (zh) * 2015-12-24 2017-07-16 摩達伊諾琴股份有限公司 複合裝置以及包含該複合裝置的電子裝置
TW201825298A (zh) * 2016-08-31 2018-07-16 日商半導體能源研究所股份有限公司 半導體裝置的製造方法

Also Published As

Publication number Publication date
CN110931366A (zh) 2020-03-27
JP7128697B2 (ja) 2022-08-31
CN117393466A (zh) 2024-01-12
KR20200033176A (ko) 2020-03-27
JP2020047760A (ja) 2020-03-26
CN110931366B (zh) 2023-10-31
TW202025314A (zh) 2020-07-01
KR102276898B1 (ko) 2021-07-14

Similar Documents

Publication Publication Date Title
TWI697981B (zh) 晶粒接合裝置及半導體裝置之製造方法
TWI702660B (zh) 黏晶裝置及半導體裝置的製造方法
TWI591746B (zh) Die bonder
JP2009140945A (ja) 部品吸着装置、その吸着位置補正方法および実装機
JP6374189B2 (ja) ダイボンダ及びボンディング方法
TW201810457A (zh) 黏晶機（ｄｉｅ ｂｏｎｄｅｒ）及接合（ｂｏｎｄｉｎｇ）方法
TWI663828B (zh) 黏晶裝置及半導體裝置的製造方法
TWI724495B (zh) 固晶裝置及半導體裝置的製造方法
CN111730626A (zh) 调整机器人装置的动作的动作调整装置及动作调整方法
WO2015132994A1 (ja) ボンディング装置
TWI743887B (zh) 晶粒接合裝置及半導體裝置的製造方法
JP5576219B2 (ja) ダイボンダおよびダイボンディング方法
JP7704534B2 (ja) ダイボンディング装置および半導体装置の製造方法
JP6391225B2 (ja) フリップチップボンダ及びフリップチップボンディング方法
JP2025135723A (ja) 半導体製造装置、モータ制御装置および半導体装置の製造方法
JP2016092192A (ja) 電子装置の製造方法
KR102488379B1 (ko) 모터 제어 장치, 다이 본딩 장치 및 반도체 장치의 제조 방법
JP2025042557A (ja) 実装装置、半導体装置の製造方法および実装装置の制御方法
JP2024130456A (ja) 半導体製造装置、ヘッドテーブルおよび半導体装置の製造方法
CN118342491A (zh) 接合装置、接合方法及计算机可读存储介质