JP7128697B2 - ダイボンディング装置および半導体装置の製造方法 - Google Patents

ダイボンディング装置および半導体装置の製造方法 Download PDF

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JP7128697B2
JP7128697B2 JP2018174833A JP2018174833A JP7128697B2 JP 7128697 B2 JP7128697 B2 JP 7128697B2 JP 2018174833 A JP2018174833 A JP 2018174833A JP 2018174833 A JP2018174833 A JP 2018174833A JP 7128697 B2 JP7128697 B2 JP 7128697B2
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axis direction
die
vibration
bonding
waveform
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Japanese (ja)
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JP2020047760A (ja
JP2020047760A5 (enExample
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充明 楯
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Fasford Technology Co Ltd
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Fasford Technology Co Ltd
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Priority to JP2018174833A priority Critical patent/JP7128697B2/ja
Priority to TW108129073A priority patent/TWI724495B/zh
Priority to KR1020190108739A priority patent/KR102276898B1/ko
Priority to CN201910880445.6A priority patent/CN110931366B/zh
Priority to CN202311305066.7A priority patent/CN117393466A/zh
Publication of JP2020047760A publication Critical patent/JP2020047760A/ja
Publication of JP2020047760A5 publication Critical patent/JP2020047760A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
JP2018174833A 2018-09-19 2018-09-19 ダイボンディング装置および半導体装置の製造方法 Active JP7128697B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018174833A JP7128697B2 (ja) 2018-09-19 2018-09-19 ダイボンディング装置および半導体装置の製造方法
TW108129073A TWI724495B (zh) 2018-09-19 2019-08-15 固晶裝置及半導體裝置的製造方法
KR1020190108739A KR102276898B1 (ko) 2018-09-19 2019-09-03 다이 본딩 장치, 및 반도체 장치의 제조 방법
CN201910880445.6A CN110931366B (zh) 2018-09-19 2019-09-18 芯片贴装装置及半导体器件的制造方法
CN202311305066.7A CN117393466A (zh) 2018-09-19 2019-09-18 芯片贴装装置及半导体器件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018174833A JP7128697B2 (ja) 2018-09-19 2018-09-19 ダイボンディング装置および半導体装置の製造方法

Publications (3)

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JP2020047760A JP2020047760A (ja) 2020-03-26
JP2020047760A5 JP2020047760A5 (enExample) 2021-08-12
JP7128697B2 true JP7128697B2 (ja) 2022-08-31

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JP2018174833A Active JP7128697B2 (ja) 2018-09-19 2018-09-19 ダイボンディング装置および半導体装置の製造方法

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Country Link
JP (1) JP7128697B2 (enExample)
KR (1) KR102276898B1 (enExample)
CN (2) CN110931366B (enExample)
TW (1) TWI724495B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115623697B (zh) * 2022-12-06 2023-04-07 常州铭赛机器人科技股份有限公司 芯片贴装机构

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012234952A (ja) 2011-04-28 2012-11-29 Shibaura Mechatronics Corp 電子部品の実装装置及び実装方法
JP2015173551A (ja) 2014-03-12 2015-10-01 ファスフォードテクノロジ株式会社 半導体製造方法及びダイボンダ
JP2015177110A (ja) 2014-03-17 2015-10-05 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法

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US20040016995A1 (en) * 2002-07-25 2004-01-29 Kuo Shun Meen MEMS control chip integration
US7311004B2 (en) * 2003-03-10 2007-12-25 Capstan Ag Systems, Inc. Flow control and operation monitoring system for individual spray nozzles
US20040204777A1 (en) * 2003-04-14 2004-10-14 Alon Harpaz Precision motion control using feed forward of acceleration
JP2005340780A (ja) * 2004-04-27 2005-12-08 Matsushita Electric Ind Co Ltd 電子部品装着装置および電子部品装着方法
US9802225B2 (en) * 2005-06-27 2017-10-31 General Vibration Corporation Differential haptic guidance for personal navigation
US20070290282A1 (en) * 2006-06-15 2007-12-20 Nanochip, Inc. Bonded chip assembly with a micro-mover for microelectromechanical systems
EP2075534A4 (en) * 2007-09-19 2013-05-29 Murata Manufacturing Co COMPOSITE SENSOR AND ACCELERATION SENSOR
JP5652155B2 (ja) * 2010-11-24 2015-01-14 セイコーエプソン株式会社 振動片、センサーユニット、電子機器、振動片の製造方法、および、センサーユニットの製造方法
JP5320420B2 (ja) 2011-02-18 2013-10-23 株式会社日立ハイテクインスツルメンツ モータ制御装置およびモータ制御方法
JP5705052B2 (ja) * 2011-07-26 2015-04-22 株式会社新川 ダイボンディング装置
US9564413B2 (en) * 2011-09-15 2017-02-07 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus
JP6045837B2 (ja) * 2012-07-26 2016-12-14 日東電工株式会社 半導体ウエハのマウント方法および半導体ウエハのマウント装置
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KR20140118792A (ko) * 2013-03-29 2014-10-08 세이코 엡슨 가부시키가이샤 진동 소자, 진동자, 발진기, 전자 기기, 센서, 및 이동체
US9368423B2 (en) * 2013-06-28 2016-06-14 STATS ChipPAC Pte. Ltd. Semiconductor device and method of using substrate with conductive posts and protective layers to form embedded sensor die package
JP6276545B2 (ja) * 2013-09-18 2018-02-07 ファスフォードテクノロジ株式会社 ダイボンダ
JP6337395B2 (ja) * 2014-05-09 2018-06-06 パナソニックＩｐマネジメント株式会社 入出力操作装置
CN106132688B (zh) * 2014-01-27 2020-07-14 康宁股份有限公司 用于薄片与载体的受控粘结的制品和方法
US9527723B2 (en) * 2014-03-13 2016-12-27 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming microelectromechanical systems (MEMS) package
JP6356458B2 (ja) * 2014-03-31 2018-07-11 日東電工株式会社 ダイボンドフィルム、ダイシングシート付きダイボンドフィルム、半導体装置、及び、半導体装置の製造方法
KR101877503B1 (ko) * 2015-12-24 2018-07-11 주식회사 모다이노칩 복합 소자 및 이를 구비하는 전자기기
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JP2012234952A (ja) 2011-04-28 2012-11-29 Shibaura Mechatronics Corp 電子部品の実装装置及び実装方法
JP2015173551A (ja) 2014-03-12 2015-10-01 ファスフォードテクノロジ株式会社 半導体製造方法及びダイボンダ
JP2015177110A (ja) 2014-03-17 2015-10-05 ファスフォードテクノロジ株式会社 ダイボンダ及びボンディング方法

Also Published As

Publication number Publication date
CN110931366A (zh) 2020-03-27
CN117393466A (zh) 2024-01-12
KR20200033176A (ko) 2020-03-27
JP2020047760A (ja) 2020-03-26
CN110931366B (zh) 2023-10-31
TWI724495B (zh) 2021-04-11
TW202025314A (zh) 2020-07-01
KR102276898B1 (ko) 2021-07-14

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