TWI722175B - 功率半導體構件和產生功率半導體構件的方法 - Google Patents

功率半導體構件和產生功率半導體構件的方法 Download PDF

Info

Publication number
TWI722175B
TWI722175B TW106113756A TW106113756A TWI722175B TW I722175 B TWI722175 B TW I722175B TW 106113756 A TW106113756 A TW 106113756A TW 106113756 A TW106113756 A TW 106113756A TW I722175 B TWI722175 B TW I722175B
Authority
TW
Taiwan
Prior art keywords
area
region
power semiconductor
doping
doped
Prior art date
Application number
TW106113756A
Other languages
English (en)
Chinese (zh)
Other versions
TW201740566A (zh
Inventor
阿爾斐德 葛拉荷
沃夫岡 費勒
Original Assignee
德商羅伯特博斯奇股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 德商羅伯特博斯奇股份有限公司 filed Critical 德商羅伯特博斯奇股份有限公司
Publication of TW201740566A publication Critical patent/TW201740566A/zh
Application granted granted Critical
Publication of TWI722175B publication Critical patent/TWI722175B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66128—Planar diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW106113756A 2016-04-27 2017-04-25 功率半導體構件和產生功率半導體構件的方法 TWI722175B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016207117.3 2016-04-27
DE102016207117.3A DE102016207117A1 (de) 2016-04-27 2016-04-27 Leistungshalbleiterbauelement und Verfahren zur Herstellung des Leistungshalbleiterbauelements

Publications (2)

Publication Number Publication Date
TW201740566A TW201740566A (zh) 2017-11-16
TWI722175B true TWI722175B (zh) 2021-03-21

Family

ID=60081595

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106113756A TWI722175B (zh) 2016-04-27 2017-04-25 功率半導體構件和產生功率半導體構件的方法

Country Status (4)

Country Link
CN (1) CN107346781A (de)
DE (1) DE102016207117A1 (de)
FR (1) FR3050866B1 (de)
TW (1) TWI722175B (de)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200610156A (en) * 2004-09-03 2006-03-16 Silicon Based Tech Corp LOCOS-based schottky barrier diode and its manufacturing methods
TW200610061A (en) * 2004-09-03 2006-03-16 Silicon Based Tech Corp LOCOS-based junction-pinched schottky rectifier and its manufacturing methods
TW201034188A (en) * 2009-03-13 2010-09-16 Univ Feng Chia Vertical type MOSFET device structure with split gates and method for manufacturing the same
TW201322339A (zh) * 2011-11-18 2013-06-01 Anpec Electronics Corp 蕭基二極體元件的製作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347547A (ja) * 2002-05-27 2003-12-05 Mitsubishi Electric Corp 電力用半導体装置及びその製造方法
DE102006011697B4 (de) * 2006-03-14 2012-01-26 Infineon Technologies Austria Ag Integrierte Halbleiterbauelementeanordnung und Verfahren zu deren Herstellung
JP5235960B2 (ja) * 2010-09-10 2013-07-10 株式会社東芝 電力用半導体装置及びその製造方法
JP5719167B2 (ja) * 2010-12-28 2015-05-13 ルネサスエレクトロニクス株式会社 半導体装置
JP5915076B2 (ja) * 2011-10-21 2016-05-11 富士電機株式会社 超接合半導体装置
JP2013149761A (ja) * 2012-01-18 2013-08-01 Fuji Electric Co Ltd 半導体装置
JP5991384B2 (ja) * 2013-01-16 2016-09-14 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6248392B2 (ja) * 2013-01-17 2017-12-20 富士電機株式会社 半導体装置
JP6089733B2 (ja) * 2013-01-30 2017-03-08 富士電機株式会社 半導体装置
US9406543B2 (en) * 2013-12-10 2016-08-02 Samsung Electronics Co., Ltd. Semiconductor power devices and methods of manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200610156A (en) * 2004-09-03 2006-03-16 Silicon Based Tech Corp LOCOS-based schottky barrier diode and its manufacturing methods
TW200610061A (en) * 2004-09-03 2006-03-16 Silicon Based Tech Corp LOCOS-based junction-pinched schottky rectifier and its manufacturing methods
TW201034188A (en) * 2009-03-13 2010-09-16 Univ Feng Chia Vertical type MOSFET device structure with split gates and method for manufacturing the same
TW201322339A (zh) * 2011-11-18 2013-06-01 Anpec Electronics Corp 蕭基二極體元件的製作方法

Also Published As

Publication number Publication date
FR3050866B1 (fr) 2023-01-27
CN107346781A (zh) 2017-11-14
DE102016207117A1 (de) 2017-11-02
FR3050866A1 (fr) 2017-11-03
TW201740566A (zh) 2017-11-16

Similar Documents

Publication Publication Date Title
JP5365009B2 (ja) 半導体装置およびその製造方法
JP5914060B2 (ja) 炭化珪素半導体装置の製造方法
JP6269860B2 (ja) 半導体装置
US8598622B2 (en) Semiconductor device
US9905684B2 (en) Semiconductor device having schottky junction between substrate and drain electrode
US20170213766A1 (en) Semiconductor device and manufacturing method of the same
JP2015146406A (ja) 縦型電子デバイスの製造方法および縦型電子デバイス
JP2014011342A (ja) 炭化珪素半導体装置
US20150255290A1 (en) Method for manufacturing semiconductor device
CN109427563B (zh) 碳化硅器件和用于制造碳化硅器件的方法
JP6455514B2 (ja) 半導体装置および半導体装置の製造方法
TWI722175B (zh) 功率半導體構件和產生功率半導體構件的方法
CN108788473B (zh) 化合物半导体装置及其制造方法以及树脂密封型半导体装置
JP6227255B2 (ja) ダイオード及びその製造方法
US10896961B2 (en) Semiconductor device
US8728923B2 (en) Manufacturing method of semiconductor device
JP2012089735A (ja) 半導体装置およびその製造方法
JP6537711B2 (ja) 半導体装置
CN111009571B (zh) 半导体装置
JP5970806B2 (ja) 絶縁ゲート型半導体装置の製造方法
CN109390384B (zh) 碳化硅半导体装置及碳化硅半导体装置的制造方法
JP6309211B2 (ja) 炭化ケイ素半導体装置
JP2009054718A (ja) 半導体装置の製造方法
JP2013012652A (ja) 逆阻止絶縁ゲート型バイポーラトランジスタとその製造方法
JP2017135273A (ja) 半導体装置およびその製造方法