CN107346781A - 功率半导体构件和用于制造功率半导体构件的方法 - Google Patents
功率半导体构件和用于制造功率半导体构件的方法 Download PDFInfo
- Publication number
- CN107346781A CN107346781A CN201710281759.5A CN201710281759A CN107346781A CN 107346781 A CN107346781 A CN 107346781A CN 201710281759 A CN201710281759 A CN 201710281759A CN 107346781 A CN107346781 A CN 107346781A
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- doping
- power semiconductor
- semiconductor component
- epitaxial layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000000926 separation method Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
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- 239000004744 fabric Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
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- 238000005452 bending Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
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- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- 229910001415 sodium ion Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66128—Planar diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102016207117.3 | 2016-04-27 | ||
| DE102016207117.3A DE102016207117A1 (de) | 2016-04-27 | 2016-04-27 | Leistungshalbleiterbauelement und Verfahren zur Herstellung des Leistungshalbleiterbauelements |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107346781A true CN107346781A (zh) | 2017-11-14 |
Family
ID=60081595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710281759.5A Pending CN107346781A (zh) | 2016-04-27 | 2017-04-26 | 功率半导体构件和用于制造功率半导体构件的方法 |
Country Status (4)
| Country | Link |
|---|---|
| CN (1) | CN107346781A (de) |
| DE (1) | DE102016207117A1 (de) |
| FR (1) | FR3050866B1 (de) |
| TW (1) | TWI722175B (de) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030218220A1 (en) * | 2002-05-27 | 2003-11-27 | Mitsubishi Denki Kabushiki Kaisha | Power semiconductor device and method of manufacturing the same |
| US20070222023A1 (en) * | 2006-03-14 | 2007-09-27 | Infineon Technologies Austria Ag | Integrated circuit having a semiconductor arrangement and method for producing it |
| CN103066125A (zh) * | 2011-10-21 | 2013-04-24 | 富士电机株式会社 | 超结半导体器件 |
| US20130181328A1 (en) * | 2012-01-18 | 2013-07-18 | Fuji Electric Co., Ltd. | Semiconductor device |
| US20140027847A1 (en) * | 2010-12-28 | 2014-01-30 | Renesas Electronics Corporation | Semiconductor device |
| US20140117445A1 (en) * | 2010-09-10 | 2014-05-01 | Kabushiki Kaisha Toshiba | Power semiconductor device and method for manufacturing the same |
| US20140197476A1 (en) * | 2013-01-17 | 2014-07-17 | Fuji Electric Co., Ltd. | Semiconductor device |
| US20140210037A1 (en) * | 2013-01-30 | 2014-07-31 | Fuji Electric Co., Ltd. | Semiconductor device |
| US20150162423A1 (en) * | 2013-12-10 | 2015-06-11 | Samsung Electronics Co., Ltd. | Semiconductor power devices and methods of manufacturing the same |
| US20150249149A1 (en) * | 2013-01-16 | 2015-09-03 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semicounductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI283929B (en) * | 2004-09-03 | 2007-07-11 | Silicon Based Tech Corp | LOCOS-based schottky barrier diode and its manufacturing methods |
| TWI232525B (en) * | 2004-09-03 | 2005-05-11 | Silicon Based Tech Corp | LOCOS-based junction-pinched SCHOTTKY rectifier and its manufacturing methods |
| TWI398951B (zh) * | 2009-03-13 | 2013-06-11 | Univ Feng Chia | 具分離式閘極垂直型金氧半電晶體元件結構及其製造方法 |
| TWI441262B (zh) * | 2011-11-18 | 2014-06-11 | Anpec Electronics Corp | 蕭基二極體元件的製作方法 |
-
2016
- 2016-04-27 DE DE102016207117.3A patent/DE102016207117A1/de active Pending
-
2017
- 2017-04-25 TW TW106113756A patent/TWI722175B/zh active
- 2017-04-25 FR FR1753557A patent/FR3050866B1/fr active Active
- 2017-04-26 CN CN201710281759.5A patent/CN107346781A/zh active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030218220A1 (en) * | 2002-05-27 | 2003-11-27 | Mitsubishi Denki Kabushiki Kaisha | Power semiconductor device and method of manufacturing the same |
| US20070222023A1 (en) * | 2006-03-14 | 2007-09-27 | Infineon Technologies Austria Ag | Integrated circuit having a semiconductor arrangement and method for producing it |
| US20140117445A1 (en) * | 2010-09-10 | 2014-05-01 | Kabushiki Kaisha Toshiba | Power semiconductor device and method for manufacturing the same |
| US20140027847A1 (en) * | 2010-12-28 | 2014-01-30 | Renesas Electronics Corporation | Semiconductor device |
| CN103066125A (zh) * | 2011-10-21 | 2013-04-24 | 富士电机株式会社 | 超结半导体器件 |
| US20130181328A1 (en) * | 2012-01-18 | 2013-07-18 | Fuji Electric Co., Ltd. | Semiconductor device |
| US20150249149A1 (en) * | 2013-01-16 | 2015-09-03 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing semicounductor device |
| US20140197476A1 (en) * | 2013-01-17 | 2014-07-17 | Fuji Electric Co., Ltd. | Semiconductor device |
| US20140210037A1 (en) * | 2013-01-30 | 2014-07-31 | Fuji Electric Co., Ltd. | Semiconductor device |
| US20150162423A1 (en) * | 2013-12-10 | 2015-06-11 | Samsung Electronics Co., Ltd. | Semiconductor power devices and methods of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI722175B (zh) | 2021-03-21 |
| FR3050866B1 (fr) | 2023-01-27 |
| DE102016207117A1 (de) | 2017-11-02 |
| FR3050866A1 (fr) | 2017-11-03 |
| TW201740566A (zh) | 2017-11-16 |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20171114 |
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