TWI283929B - LOCOS-based schottky barrier diode and its manufacturing methods - Google Patents

Abstract

The LOCOS-based Schottky barrier diode of the present invention comprises a raised diffusion guard ring surrounded by an outer LOCOS field oxide layer, a recessed semiconductor substrate with or without a compensated diffusion layer surrounded by the raised diffusion guard ring, a metal silicide layer formed over a portion of the raised diffusion guard ring and the recessed semiconductor substrate, and a patterned metal layer formed at least over the metal silicide layer, wherein the raised diffusion guard ring is formed between an inner LOCOS field oxide layer and the outer LOCOS field oxide layer and the recessed semiconductor substrate is formed by removing the inner LOCOS field oxide layer. The LOCOS-based Schottky barrier diode comprises the raised diffusion guard ring to reduce junction curvature effect on reverse breakdown voltage, the recessed semiconductor substrate to reduce forward voltage, and the compensated diffusion layer to reduce reverse leakage current.

Description

1283929 V. INSTRUCTION DESCRIPTION OF THE INVENTION (1) Technical Field of the Invention The present invention relates to a Schottky barrier diode and a method of fabricating the same, and in particular to a LOCOS-based xiao The special barrier metal diode (LBSBD) and its manufacturing method are related. [Prior Art] A Schottky barrier diode comprising at least one metal-semiconductor contact is recognized as a majority carrier diode and thus acts as a high speed switching diode or a high frequency rectifier. For Schottky barrier diodes used as a switching power diode, the main design issues are focused on reverse breakdown voltage (VB), reverse leakage current (IR), forward current (IF), and Forward voltage (VF). Typically, a Schottky barrier diode requires a diffusion guard ring to reduce the reverse leakage current generated by the edge effect of the metal-semiconductor contact and to relax the soft collapse caused by the high edge electrical field. However, the diffusion guard ring produces the effect of the junction curvature (c u r v a t u r e ) effect on the reverse collapse voltage and typically requires a deep junction depth to reduce the junction curvature effect. Therefore, it is quite difficult to obtain a large reverse breakdown voltage and a small forward voltage for a known metal-semiconductor contact area. Figure 1 shows a schematic cross-sectional view of a conventional Schottky barrier diode having a diffusion protection ring in which a P+ diffusion protection ring 105 is passed through a layer between two patterned field oxide layers 102a.

1283929 V'Inventive Description (2) A diffusion window (not shown) is formed in a surface portion of an n-/n+ epitaxial germanium substrate 1〇1/100; a metal telluride layer i 0 3 As a - the Schottky barrier metal layer is formed over a portion of the surface of the p+ diffusion protection ring 丨0 5 and is placed in the rr/ surrounded by a forming step borosilicate (BSG) layer 1 〇 6a Above the surface of the n+ epitaxial germanium substrate 101/丨00; a formed metal layer 10 4 a is formed on a portion of the surface of the formed field oxide layer 丨〇 2 a , the forming step borosilicate layer 1 〇 6 a, and the metal lithium layer 1 〇 3 and a back side metal layer (not shown) formed as an ohmic contact metal layer on the n + 矽 substrate 1 这里 can be clearly seen here The fabrication of the Schottky barrier diode + shown in FIG. 1 requires three mask photoresist steps, wherein a first mask photoresist is used to define the diffusion window of the P+ diffusion protection ring; The second surface photoresist step is used to remove the formed field oxide layer 1〇2a (not shown) stepped glass layer 106 (not shown) a portion of the metal layer 10b; and a third mask photoresist step for forming the second metal layer 104a. Obviously, the width of the p+ diffusion protection ring 1〇5 Must be kept wide and the junction depth of the P+ diffusion protection ring 105 must be kept/clothed. Therefore, the cell size of the Schottky barrier diode will become larger and the specified forward current (If) value The forward voltage (Vf) will become larger. In addition, the step c〇verage of the formed metal layer 104a is also poor, and a main object of the present invention is to provide a local oxide oxide barrier. The diode (LBSBD) has a raised diffusion protection % to obtain a large reverse breakdown voltage and a recessed semiconductor substrate

1283929 V. INSTRUCTION DESCRIPTION (3) To obtain a smaller forward voltage Another object of the present invention is to provide an important aspect of the basic invention of a screen P early diode (LBSBD) having a preferred metal emulsification base. The purpose is to provide an & coverage. The barrier-type diode (LBSBD) has a surface portion of the compensation second/Monte-based Schottky semiconductor substrate, and the image-f〇rCe 1〇Wering effect is reduced in the image. Reducing the curvature of the convex diffusion protection ring belongs to electric electricity: and enters the reverse collapse voltage. The hand effect is increased. SUMMARY OF THE INVENTION The present invention discloses a local gas servant # Μ β β π 二 二 β 丨 emulsifier 萧 萧 萧 萧a barrier bismuth body and a method of fabricating the same, the local yttrium oxide Schottky barrier diode comprising at least one semiconductor substrate of a first conductivity type having a lightly doped epitaxial layer formed on one, doped shi Above, a convex diffusion protection f of a second conductivity type is formed between an external localized yttrium oxide field layer and an internal localized yttrium oxide field layer, and a recessed semiconductor substrate has or does not have a convex a compensation diffusion layer surrounded by the diffusion protection ring, a metal lithium layer formed on a portion of the surface of the convex diffusion protection ring and surrounded by the convex diffusion protection ring Above the surface of the recessed semiconductor substrate, and a shaped metal layer formed on at least the metal germanide layer, wherein the compensating diffusion layer spans a pad oxide layer before performing the local germanium oxide process Budding a compensating dose of doping

Page 9 1283929 V. INSTRUCTION DESCRIPTION (4) The quality is formed in a surface portion of the recessed semiconductor substrate and the internal partial oxide field oxide layer is subjected to a diffusion process to form the protruding diffusion protection ring. It is then removed by a mask photoresist step. The local yttrium oxide Schottky barrier diode of the present invention provides the embossed diffusion protection ring to reduce the effect of the junction curvature effect on the reverse collapse voltage, and the recessed semiconductor substrate forms a Schottky barrier contact to reduce the impurity a series resistance and a compensation diffusion layer are formed in one surface portion of the recessed semiconductor substrate to reduce a reverse leakage current generated by an image force reduction effect and further reduce a curvature effect of the junction of the convex diffusion protection ring [Embodiment] Referring now to Figures 2A to 2G, a process step for fabricating a first type of local yttrium oxide Schottky barrier diode of the present invention and a schematic cross-sectional view thereof are disclosed. 2A shows that a pad oxide layer 2 0 2 is formed over a semiconductor substrate 201/200 of a first conductivity type; a mask nitride layer 203 is formed on the pad oxide layer 202. Above; then, a first mask photoresist (PR1) step is performed to define a diffusion guard ring region (pGR). The pad oxide layer 220 is a thermal ceria layer and is grown on the semiconductor substrate 201/200 in a dry oxygen atmosphere having a thickness between 1 〇f Å and 500 Å. The mask tantalum nitride layer is formed by a low pressure chemical vapor deposition (LPCVD) method and has a thickness of between 5 〇〇 and 15 〇〇 ^.

1283929 V. Description of invention (5). The semiconductor substrate 2 0 1 / 2 0 0 at least comprises a lightly doped epitaxial layer 2 0 1 formed on a highly doped germanium substrate 200, wherein the lightly doped epitaxial layer 201 is The doping concentration is between 1〇14/cm3 and 1〇17/cm^3 and the thickness of the epitaxial layer is between 2μm and 35μm, and is determined by the required breakdown voltage; The doping concentration of the highly doped semiconductor substrate 200 is between 1 018 /cm ^ 3 and 5 · 0 X 1 020 /cm ^ 3 and the thickness is between 250 μm and 800 μm, and It is determined by the size of the wafer. Figure 2B shows that the mask nitride layer 206 outside the diffusion protection ring region (DGR) is removed by anisotropic dry residuation to form an internal field oxide layer region ( IF Ο XR ) and an external field oxide layer (OFOXR). Therefore, the forming layer of the nitride layer in the diffusion protection ring region (DGR) is retained. Figure 2C shows that the tantalum oxide layer 202 outside the tantalum nitride layer 2 〇 3 a of the forming mask is removed by buffering hydrofluoric acid or diluted nitrogen acid; then, in a water A partial oxidation enthalpy (LOCOS) process is carried out under steam or diffuse oxygen = to form an internal = wide yttrium oxide field oxide layer 204b in the internal field oxide region (4 and an external local yttria field oxidation) The layer 2 〇4 a is within the outer object area (OF0XR) of the outer p. The internal/external local oxidized oxide field oxide = the thickness of the oxide 204b/204a is between 6000 angstroms and 10000 angstroms, the layer The temperature system is between 950 ° C and 1 200 ° C. The notable f-oxygenated local yttrium oxide process here may not need to remove the forming mask nitriding layer ^ 'the outside of the pad oxidation The layer 202 is oxidized.

1283929

Figure 2D shows this point: ^ Non-isotropic dry etching method ^ f-shaped military screen tantalum nitride layer 2 0 3 a system using hot phosphoric acid or ion implantation, f is added to remove; then, with automatic alignment The oxide layer of the second conductivity type spans the forming pad to form a surface portion of the ion-side + conductor substrate 201/200. 2 〇 5 a. It is worth noting here that if a solid source or a ^ 2 0 2 a is added for removal, a liquid source and a single plant are used. A conventional thermal diffusion process of the body 4 source can be substituted for the second to the guard ring 2 0 5b and the external impurity is driven into the process to form a 嗰 convex diffusion to protect the forming oxidized internal local oxidized stone. The epoch oxide layer 2 04a / 2 04b, the bulging diffusion protection St also becomes thicker at the same time. It is worth emphasizing that the junction depth of / ιλι a Μ & /, β 辰 2 0 5 b is slightly deeper than the bottom surface level of the outer ^ 氧化物 field oxide layer 204c/204d. The protruding diffusion protection ring 2〇 5b may be a highly doped diffusion protection ring, a moderately doped diffusion protection ring or a highly doped diffusion protection ring formed within a moderately doped diffusion protection ring. Figure 1 w does not perform a second mask photoresist (PR2) step, and places the second mask photoresist (pR2) on the external local oxide field oxide 2 0 4c and the protruding diffusion protection ring Above a surface of a hot oxygen 2 0 2b above 2〇5b. The emulsified ruthenium layer photoresist diagram II G shows the local oxide f field oxide layer 2 0 4d outside the formed second mask photoresist (PR2) and the thermal ruthenium dioxide layer 2 〇 2b ^ buffered hydrogen fluoride Acid is added for removal; then, the formed second army, (pR2) is removed and the wafer cleaning process is performed; then / 7 solid gold

Page 12 1283929 V. INSTRUCTION DESCRIPTION (7) The telluride layer 2 0 6 a is formed on an exposed crucible surface by a conventional auto-alignment deuteration process, including one of the protruding diffusion protection rings a portion of the surface and a recessed semiconductor substrate 2 0 1 / 2 0 0 surrounded by the protruding diffusion protection ring 2 0 5b. The metal telluride layer 2 0 6 a is a high temperature resistant (refractory) metallurgical layer. Figure 2G further shows that a shaped metal layer 207a is formed on a portion of the surface of the external partial oxide field oxide layer 204c and the metal by a third mask photoresist (PR3) step (not shown). Above the telluride layer 206a. The shaped metal layer 207a comprises at least one metal layer disposed over a barrier metal layer. The metal layer contains at least aluminum (A1), silver (Ag) or gold (Au). The barrier metal layer comprises at least one high temperature resistant metal layer or one high temperature resistant metal nitride layer. It is worth noting here that the highly doped germanium substrate 200 is back ground to a predetermined thickness to reduce the stray series resistance. Then, perform a back ohmic contact (not shown). Obviously, the characteristics and advantages of the first type of local yttrium oxide Schottky barrier diode of the present invention can be summarized as follows: (a) The first type of local yttrium oxide Schottky barrier diode of the present invention The body provides a convex diffusion protection ring to reduce the effect of the junction curvature effect on the reverse collapse voltage, so a larger reverse collapse voltage can be obtained by a smaller junction depth of the convex diffusion protection ring. (b) the first type of cerium oxide-based Schottky barrier diode of the present invention provides a recessed semiconductor substrate surrounded by the protruding diffusion protection ring to form

1283929 V. INSTRUCTIONS (8) A Schottky barrier metal contact to reduce the stray series resistance of the lightly doped epitaxial layer below a known reverse collapse voltage, thus below a known forward current A smaller forward voltage can be obtained without having to increase the cell area. (c) The first type of local cerium oxide-based Schottky barrier diode of the present invention has an outer partial yttrium oxide field oxide layer and an internal partial yttrium oxide field oxide layer removed to provide a preferred metal Step coverage. (d) The first type of local cerium oxide-based Schottky barrier diode of the present invention can provide a smaller cell area under known reverse collapse voltage, forward voltage and forward current. A reduced bulging diffusion protection ring and an optimized Schottky barrier contact area. Referring now to Figures 3A through 3F, there is disclosed a process step and a cross-sectional view of a second type of localized cerium oxide-based Schottky barrier diode of the present invention. Figure 3A shows an ion implantation process in an auto-alignment manner to form the second conductivity type compensation ion implantation region 208b/208a outside the formation mask tantalum nitride layer 2 0 3 a The surface portion of the lightly doped epitaxial layer 20 1 is within. The implant dose of the compensated ion implantation region 208b/208a is suitably adjusted so that the peak doping concentration is approximately equal to the doping concentration of the lightly doped epitaxial layer 201. Figure 3B shows a partial yttrium oxide process to form an internal

Page 14 1283929

5 til 场 oxide layer 2 〇 4b in the internal field oxide region (IFOXR) ^ an external local oxidized lanthanum oxide layer 2 0 4a in the external field oxide region OyOXR), ', as shown in Figure 2c description. It can be clearly seen here that the compensating ion implantation region 2〇8b/2〇8a of Fig. 3A is simultaneously applied to drive to form the compensating diffusion layer 208d/208c of the first conductivity type. Figure 3C shows that the shaped mask nitride layer in the diffusion protection ring region (DGR) is removed by thermal phosphoric acid or non-isotropic dry etching, and then automatically aligned. The method of ion implantation is as shown in Figure 2D. , three D shows an impurity drive-in process to form a convex diffusion protection ring 2 0 5 b and simultaneously make the forming pad oxide layer 2 〇 2 a and the internal ^ external local yttrium oxide field oxide layer 2 〇 4b / 204a thickens as depicted in Figure 2E. Figure 3E shows a second mask photoresist (PR2) step to form a shaped second mask photoresist (p R 2 ) to the external partial oxide field oxide layer 204c and the thermal ceria layer 202b. Part of the surface. Figure 3 f can be easily obtained according to the same process steps as described in Figure 2G. As can be clearly seen from FIG. 3F, the compensating diffusion layer 2〇8f disposed under the metal telluride layer 206 has a surface portion of the lightly doped smectite 201. A lower doping profile can substantially reduce the effect of the image force effect of the second type of local yttrium oxide Schottky barrier diode of the present invention on the reverse leakage current. In addition, it can be clearly seen that the compensating diffusion layer 2 0 8 f / 2 0 8 e can greatly reduce the junction curvature effect of the diffusion protection ring 205b, and thus has a larger ratio than the graph g

1283929 Inventive Note (10) The breakdown voltage can be easily obtained. Please refer to Figure 4A and Figure 4B for a third type of partial oxidation 矽 箫 箫 屏 屏 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ Figure Continuation Figure 2E is a simplified diagram of the four A-displays. A 个 Μ Λ - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -形成 Forming the second curtain of the J (the second curtain) (PR2) Forming a 'metal dreaming layer 2 0 6a under the second mask photoresist (PR2) and this (not shown). Here, the notched 0-termination zone guard ring 2 0 5b contains at least complex = Λ = = 5 zone. The bump diffusion spreads the dielectric layer 2 0 9 by the tantalum nitride Floating ocean diffusion ring (not shown). The thickness is between 500 Å and 3,000 Å and is accumulated by [^^, and the capping ΚΓΛ/Λ Λ is the first. The covering layer ★ (P2) is not covered by the "pr2" electric layer. The electric layer is made of an anisotropic dry type w and a capping dielectric layer 20 9a; and the forming mask 4 is formed to form a forming cover. The non-isotropic dry etching method or the buffered hydrofluoric acid n〇4b other than the thermal dioxide dioxide layer 2〇2b and the internal partial oxygen masking/resistance (PR2): in addition to the forming second mask light Resistance (PR2); then; m from = deuteration process to form the metal telluride layer 2 〇6 _ Xia-cut main π 01 in the active region of a violent stone 彳 彳 之上 , , , , , , , , , 0 7a is formed on the gold 1 germanide layer 2 0 6 a and a part of the surface of the shaped cover dielectric layer 2〇9& which can be clearly seen from FIG. 4B, the shaped cover layer 2 9a but as a hard mask layer to form the metal telluride layer 2〇63 and do

Page 16 1283929 V. Description of the invention (π) is a passivation or protective layer. More importantly, the shaped cover dielectric layer 209a can provide a etch stop layer that forms a thick metal layer (not shown) as compared to Figure 2G. Referring now to Figures 5A and 5B, there is shown a simplified process step and a simplified cross-sectional view of a fourth type of localized cerium oxide-based Schottky barrier diode of the present invention. Figure 5A shows a cover dielectric layer 209 formed over a surface of the structure shown in Figure 3D; then, a second mask photoresist (P R 2 ) step is performed, as depicted in Figure 4A.

Figure 5B can be easily obtained according to the same process steps as described in Figure 4B. Obviously, compared with Figure 3F, the advantages and characteristics of the fourth type of localized yttrium-based Schottky barrier diode described above are the same as those described in Figure 4B. According to the above description, the advantages and characteristics of the local yttrium oxide Schottky barrier diode of the present invention can be summarized as follows:

(a) The local yttrium oxide Schottky barrier diode of the present invention provides a embossed diffusion protection ring between an internal local yttrium oxide field oxide layer and an external local yttrium oxide field oxide layer to reduce The effect of the junction curvature effect of the convex diffusion protection ring on the reverse collapse voltage of a small junction depth. (b) The local cerium oxide-based Schottky barrier diode of the present invention provides a recessed semiconductor surface located within the lightly doped epitaxial layer to form a depression

Page 17 1283929 V. INSTRUCTIONS (12) The special base barrier contacts to reduce the forward voltage. (c) a local cerium oxide-based Schottky barrier diode of the present invention provides a compensation diffusion layer surrounded by the convex diffusion protection ring to form the Schottky barrier contact to reduce the image force reduction effect to the reverse The effect of leakage current and at the same time eliminating or reducing the effect of the junction curvature effect on the reverse collapse voltage (d) The local yttrium oxide Schottky barrier diode of the present invention provides a smooth surface to improve metal step coverage. (e) The local cerium oxide-based Schottky barrier diode of the present invention provides a covering dielectric layer as a hard mask layer to form the Schottky barrier contact region and the termination region and simultaneously serves as a passivation or protection The layer and a #刻止层 layer forming a thicker metal layer. It is worth noting here that the implant doping within the compensated ion implantation region of 2 0 8 a / 2 0 8 b is boron doping for the rr/n+ germanium substrate 2 0 1 / 2 0 0 . It is worth emphasizing here that the above-mentioned local yttrium oxide Schottky barrier diode can easily fabricate the local yttrium oxide by changing the doping type of the convex diffusion protection ring and the compensation ion implantation region. The Schottky barrier diode is on a p_/p+ 矽 substrate. The present invention has been illustrated and described with particular reference Furthermore, the invention is not limited to the listed

Page 18 1283929 V. Details of the Invention (13), those skilled in the art will also appreciate that various shapes or details can be made without departing from the true spirit and scope of the invention, but also The scope of the invention.

Page 19 1283929 Brief Description of the Drawings Figure 1 shows a schematic cross-sectional view of a Schottky barrier contact structure of the prior art. Figures 2A through 2G illustrate the process steps and a cross-sectional view of a first type of localized yttrium-based Schottky barrier diode of the present invention. Fig. 3A to Fig. 3F show the process steps and a schematic cross-sectional view of the second embodiment of the second type of localized cerium oxide Schottky barrier diode of the present invention. Fig. 4A and Fig. 4B show a simplified process step and a schematic cross-sectional view of the second embodiment of the third type of localized yttrium oxide Schottky barrier diode of the present invention. Fig. 5A and Fig. 5B show a simplified process step and a schematic cross-sectional view of the fourth embodiment of the fourth type of localized yttrium oxide Schottky barrier diode of the present invention. Representative figure description:

2 0 0 highly doped ruthenium substrate 2 0 2 pad oxide layer 202b thermal ruthenium dioxide layer 2 0 3 mask ruthenium nitride layer 2 0 4 a / 2 0 4 c external local ruthenium oxide 204b/204d internal local ruthenium oxide 205a ion implantation zone 206a metal telluride layer 201 lightly doped epitaxial layer 2 0 2 a shaped pad oxide layer 2 0 2 c shaped hot ruthenium dioxide layer 2 0 3 a forming mask nitride tantalum layer field oxidation Layer field oxide layer 2 0 5 b convex diffusion protection ring 207a shaped metal layer

Page 20 1283929 Brief description of the diagram 2 0 8a/ 2 0 8b Compensating ion implantation area 208c/208d/208e/208f Compensating diffusion layer 2 0 9 Covering dielectric layer 209a Forming covering dielectric layer

HI

Claims (1)

1283929 6. Patent application scope 1. A localized yttrium-based Schottky barrier diode comprising at least: a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises at least one lightly doped epitaxial semiconductor layer formed on a highly doped semiconductor plate; a convex diffusion protection ring of a second conductivity type formed between an external localized yttrium oxide oxide layer and an internal localized yttrium oxide oxide layer Within a portion of the surface of the crystalline semiconductor layer, wherein the internal localized yttrium oxide oxide layer is additionally provided to form a recessed semiconductor substrate surrounded by the raised diffusion protection ring; and a metal halide layer is formed An inner surface portion of the protruding diffusion protection ring surrounded by the outer partial oxidation oxide field oxide layer and the recessed semiconductor substrate surrounded by the convex diffusion protection ring. 2. The local cerium oxide-based Schottky barrier diode according to claim 1, wherein the external and internal localized yttrium oxide oxide layer is processed in a water via a local yttrium oxide (LOCOS) process. Oxidation in a vapor or wet oxygen environment. 3. The localized yttrium oxide Schottky barrier diode according to claim 1, wherein the protruding diffusion protection ring comprises at least one highly doped diffusion protection ring and one moderately doped diffusion protection ring. Or a highly doped diffusion protection ring is formed within a moderately doped diffusion protection ring. 4 · The local cerium oxide based Schottky barrier as described in claim 1 1283929 6. Applying for a patent range diode, wherein the above-mentioned protruding diffusion protection ring oxidizes dopants across the external localized yttrium oxide oxide layer and the internal local yttrium oxide field in an automatic alignment manner. A pad oxide layer between the layers is implanted within a surface portion of the lightly doped epitaxial semiconductor layer. 5. The local yttrium oxide Schottky barrier diode of claim 1, wherein the bulging diffusion protection ring is in a self-aligned manner by a liquid source, a solid source, Or a thermal diffusion process of a gas source is formed through a diffusion window between the outer localized yttria oxide layer and the internal local yttrium oxide oxide layer. 6. The localized cerium oxide-based Schottky barrier diode of claim 1, wherein the metal halide layer comprises at least one refractory metal deuteration formed by an auto-alignment deuteration process. Layer of matter. 7. The local yttrium oxide Schottky barrier diode of claim 1, wherein a compensating ion implant of the second conductivity type is used to form a compensation diffusion layer on the exterior and interior A portion of the surface portion of the lightly doped semiconductor layer below the local oxide field oxide layer. A partial cerium oxide-based Schottky barrier diode comprising at least: a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises at least one lightly doped epitaxial layer formed on a highly doped germanium substrate Above Page 23 1283929 VI. Scope of Application A diffusion protection ring region is formed between an external localized yttrium oxide field layer and an internal local yttrium oxide field oxide layer by a LOCOS process. The diffusion protection ring region is doped in an automatic alignment manner to form a convex diffusion protection ring of a second conductivity type within a surface portion of the lightly doped epitaxial layer; a recessed semiconductor The substrate is formed by removing the inner partial yttrium oxide field oxide layer; a refractory metal deuterated layer is formed on an inner surface portion of the protruding diffusion protection ring surrounded by the outer partial yttrium oxide field oxide layer and a recessed semiconductor substrate surrounded by the protruding diffusion protection ring; and a shaped metal layer formed at least on the high temperature resistant metal halide layer. 9. The localized cerium oxide base according to claim 8 a barrier-based diode, wherein the lightly doped epitaxial layer has a doping concentration of 1 014 /cm ^ 3 and 1 017 / cubic centimeter And a thickness between between 2 microns and 35 microns. The local cerium oxide-based Schottky barrier diode according to claim 8, wherein the external and internal localized yttrium oxide oxide layer is formed by the local yttrium oxide (LOCOS) process. It is grown to a thickness between 600 Å and 1 00 Å in a water vapor or wet oxygen environment. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; A moderately doped diffusion protection ring or a highly doped diffusion protection ring is formed within a moderately doped diffusion protection ring. 1 2. The localized cerium oxide-based Schottky barrier diode according to claim 8 wherein one of the compensating diffusion layers is crossed by a pad oxide layer before the local cerium oxide process is performed. The doping of the two conductivity type is on a surface portion of the lightly doped epitaxial layer outside the diffusion protection ring region. The localized yttrium-based Schottky barrier diode according to claim 8, wherein the formed metal layer comprises at least one metal layer disposed on a barrier metal layer and formed in a shaped covering a portion of the surface of the dielectric layer and the metal halide layer. 1 1. A partial cerium oxide-based Schottky barrier diode comprising at least: a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises at least one lightly doped epitaxial layer formed on a highly doped germanium Above the substrate; A diffusion protection ring region is formed by a localized yttria (LOCOS) process between an external localized yttrium oxide field layer and an internal local yttrium oxide field oxide layer formed in a water vapor or wet oxygen environment. The diffusion protection ring region is doped in an auto-aligned manner by ion implantation or a thermal diffusion process to form a protrusion of a second conductivity type Page 25 1283929 6. The patent application scope diffusion protection ring is within a surface portion of the lightly doped epitaxial layer; a recessed semiconductor substrate is formed by removing the internal local oxide field oxide layer, wherein The recessed semiconductor substrate includes at least one compensation diffusion layer formed in a surface portion of the lightly doped epitaxial layer; a high temperature resistant metal telluride layer is formed on the outer partial oxide oxide field oxide layer Extending an inner surface portion of the diffusion protection ring and the recessed semiconductor substrate surrounded by the protruding diffusion protection ring, wherein the high temperature resistant metal telluride layer is formed by an automatic alignment deuteration process; and The formed metal layer is formed on at least a portion of the surface of the shaped cover dielectric layer and the high temperature resistant metal telluride layer. 1. The local yttrium oxide Schottky barrier diode of claim 14, wherein the shaped overlying dielectric layer comprises at least a tantalum nitride system formed over the convex diffusion protection ring An outer surface portion of a thermal ruthenium dioxide layer and a portion of the surface of the outer local yttrium oxide oxide layer. 16. The localized yttrium-based Schottky barrier diode of claim 14, wherein the thermal diffusion process comprises at least one thermal doping using a liquid source, a solid source, or a gas source. Process. 17. The localized yttrium-based Schottky barrier diode of claim 14, wherein the diffusion protection ring region is provided by a first mask Page 26 1283929 VI. Scope of Application The photoresist step is defined by placing a masked tantalum nitride layer on top of a pad (p a d ) oxide layer. 18. The local yttrium oxide Schottky barrier diode according to claim 14, wherein the internal partial oxidized lanthanum oxide layer is utilized after doping the bulging diffusion protection ring. The second mask photoresist step is added for removal. 19. The localized cerium oxide-based Schottky barrier diode according to claim 14, wherein the shaped metal layer comprises at least one layer of silver (Ag), aluminum (A1) or gold (Au). A portion of the barrier metal layer is formed on a portion of the surface of the shaped capping dielectric layer and the refractory metal germanide layer by a third mask photoresist step. The local yttrium oxide Schottky barrier diode of claim 14, wherein the compensating diffusion layer spans a pad oxide layer before the local yttrium oxide layer process is performed. The dopant of the second conductivity type is implanted within a surface portion of the lightly doped epitaxial layer outside the diffusion protection ring region. Page 27