TWI232525B - LOCOS-based junction-pinched SCHOTTKY rectifier and its manufacturing methods - Google Patents

Abstract

The LOCOS-based junction-pinched Schottky rectifier of the present invention comprises a raised diffusion guard ring surrounded by an outer LOCOS field oxide layer, a raised diffusion grid or a plurality of raised diffusion rings or stripes surrounded by the raised diffusion guard ring, a plurality of recessed semiconductor surfaces formed on a lightly-doped epitaxial semiconductor layer surrounded by the raised diffusion guard ring and the raised diffusion grid or by the raised diffusion guard ring and the plurality of raised diffusion rings or stripes, and a metal-silicide layer or a metal layer being at least formed over a portion of the raised diffusion guard ring, the plurality of recessed semiconductor surfaces and the raised diffusion grid or the plurality of raised diffusion rings or stripes. A plurality of compensated diffusion layers can be formed in surface portions of the lightly-doped epitaxial semiconductor layer under the plurality of recessed semiconductor surfaces.

Description

1232525

[Technical field to which the invention belongs] The present invention relates to a Schottky barrier diode (SBD) and a method for manufacturing the same, and in particular, to a localized oxide oxidation (LOCOS-based) junction extrusion ( Junction-pinched) earth (LBJPS) rectifier and its manufacturing method. Fu Ji [Previous Technology] A Schottky screen P early pole contains at least one metal-semiconductor contact system and is recognized as a majority carrier diode and thus as a high-speed switching diode or a high-frequency rectifier. Generally, the Schottky barrier diode requires a diffusion protection to eliminate the edge leakage current and soft breakdown caused by the metal-semiconductor contact. However, the diffusion guard ring needs a deeper interface to reduce the effect of the junction curvature effect of the Schottky barrier diode on the reverse breakdown voltage. Therefore, it is quite difficult for a traditional Schottky barrier diode to have both a lower forward voltage drop of 3 and a larger reverse breakdown voltage. More importantly, a large reverse leakage current due to the effect of the image-force lowering effect on the Schottky barrier survivability has become a major concern for low power dissipation applications.

FIG. 1A shows a schematic cross-sectional view of a junction barrier control Schottky (j B s) rectifier in the prior art, in which a P diffusion gate 1 1 4 is formed in a field surrounded by a field oxide layer 1 1 6 Highly doped n + silicon substrate 丨 丨 〇 of

Page 7, 1232525 V. Description of the invention (2) A part of the surface of a lightly doped n_ epitaxial silicon layer 1 1 2 and a contact metal layer 1 1 3 are formed on the p-diffusion gate 1 1 4 and Above the lightly doped rr epitaxial silicon layer 11 2 surrounded by the p-diffusion gate 1 1 4. The ρ-η junction empty area formed by the p-diffusion gate 1 1 4 with respect to the lightly doped rr epitaxial silicon layer 1 1 2 squeezes the contact metal layer 113 under a small reverse bias. The surface portion of the lightly doped rr epitaxial silicon layer 1 1 2 can be eliminated due to the reverse leakage current generated by the image force reduction effect of the Schottky barrier contact, so the contact metal layer 1 1 3 has a relatively small A low barrier height can be used to reduce forward voltage drops. Obviously, the larger the junction depth of the p-diffusion grid 1 1 4 can reduce the curvature effect of the joint to obtain a higher reverse collapse voltage, but the surface area occupied by the p-diffusion grid 1 1 4 will become larger. In addition, the stray series resistance generated by the lightly doped rr epitaxial silicon layer 1 1 2 between or below the ρ diffusion gate 1 1 4 will become a smaller voltage required for high current or high voltage applications. A limiting factor to voltage drop. A typical example of the prior art is disclosed in U.S. Patent Nos. 4,6 4 1,17 4. FIG. 1B shows a grooved metal-oxygen half barrier Schottky (TM BS) rectifier of the prior art. A grooved gate system is formed in a surface portion of the lightly doped epitaxial silicon layer 112. A liner oxide layer 1 2 0 is formed on the surface of a groove, and a planarized metal layer 1 2 2 is formed on the liner oxide layer 1 2 0 and the groove surrounded by the groove gate. Lightly doped rr epitaxial silicon layer 1 1 2. Obviously, the surface area occupied by the grooved gate is smaller than that of the p diffusion gate 1 1 4 in FIG. 1A and the leakage between the grooved gate and the lightly doped rr epitaxial silicon layer 1 1 2 The current can be added and removed, however, a metal-oxide half-capacitor formed in the groove grid will

Page 8 1232525 V. Description of the invention (3) Presentation to the barrier state—adding 丄 ^ ^ XM ^ ^ extends to a limited number of empty layers, because ΐ i ί ΐ = t area is small and the forward voltage drop system is surrounded by 3 ^ The lightly doped nl spar layer 112 has a core limit σ. Therefore, the recessed metal-oxygen half-barrier Xiao rectifier is limited to applications with smaller forward current. An example of the prior art can be found in U.S. Patent No. 5,6 丨 2,5 6 7 Therefore, a 'primary object of the present invention is to provide a LBJPS rectifier with a convex complex convex diffusion Rings or bands and multiple recessed semiconductor surfaces or conductor rings or bands form a metal-semiconductor contact with a small forward voltage drop and a large reverse breakdown voltage. Another object of the present invention is to provide a local oxidation stop The TBJPS rectifier has a plurality of recessed semiconductor recessed semiconductor rings or bands, and has a compensation diffusion layer formed on the surface portion of a crystalline silicon layer to simultaneously eliminate the effect of the curvature of the junction on the pressure and the effect of the image force reduction on the reverse leakage current. An important object of the present invention is to provide a local oxygen squeeze Schottky (LBJPS) rectifier that is manufactured by a relatively low-cost manufacturing process step. SUMMARY OF THE INVENTION A typical example of the Scattered Tandem (T MM BS) technique of a recessed grid is that a local oxide stone is diffused or a plurality of depressions are obtained at half time to obtain a Shi Xiji interface surface or A plurality of lightly doped lei reverse the electrical effects of collapse. Silicon-based interface

Page 9 1232525 V. Description of the invention (4) The TBJPS rectifier includes at least a protruding diffusion protection ring surrounded by an external local silicon field oxide layer, and a protruding diffusion protection ring surrounded by the protruding diffusion protection ring. A protruding diffusion gate or a plurality of protruding diffusion rings or bands, and a plurality of recessed semiconductor surfaces are formed surrounded by the protruding diffusion gate and the protruding diffusion guard ring or surrounded by a plurality of protruding diffusion rings or bands and the protruding diffusion guard ring. A lightly doped zooxite layer, and a metal lithoate layer or a metal layer are formed on at least a part of the surface of the protruding diffusion protection ring, the plurality of recessed semiconductor surfaces, and the protruding diffusion The gate or the plurality protrudes above a metal contact area of the diffusion ring or band. The plurality of recessed semiconductor surfaces are formed by removing a plurality of internal silicon oxide field oxide layers. A plurality of compensated diffusion layers may be formed within the surface portion of the lightly doped epitaxial silicon layer below the surface of the plurality of recessed semiconductors. The above-mentioned external local silicon oxide field oxide layer and the plurality of internal local silicon oxide field oxide layers are formed using a local silicon oxide (LOCOS) process in a water vapor or wet oxygen environment. The complex compensation diffusion layer described above is implanted with compensation dopants across the pad oxide layer across the pad oxide layer before performing a local silicon oxide process on the external field oxide region (0F0XR) and the complex internal field oxide region (IF0XR). The surface portion of the lightly doped epitaxial silicon layer within. The above-mentioned metal contact area is formed by a mask photoresist step with or without a hard mask layer formed on an outer surface of a thermal silicon dioxide layer over the protruding diffusion protection ring and the external partial silicon oxide. A portion of the surface of the field oxide layer is on the surface. [Embodiment]

Page 10, 1232525 V. Description of the invention (5) Please refer to FIGS. 2A to 2F, which discloses the manufacturing steps for manufacturing a first type of local silicon oxide-based extruded Schottky (LBJPS) rectifier of the present invention And its brief cross-section. FIG. 2A shows that a pad oxide layer 3 02 is formed on an epitaxial semiconductor substrate 3 01/300 of a first conductivity type; and a mask dielectric layer 303 is formed on the pad oxide. Layer 302; then, a first mask photoresist (PR1) step is performed to define a protruding diffusion gate region (RDG) and a protruding diffusion guard ring region (RDGR). The pad oxide layer 302 is a thermal silicon dioxide layer and has a thickness between 200 angstroms and 500 angstroms. The mask dielectric layer 3 0 3 is composed of nitride nitride and is deposited using a low pressure chemical vapor deposition (LPCVD) method. The thickness is between 800 Angstroms and 1500 Angstroms. The stupid semiconductor substrate 3 0 1/3 0 0, 7 bar, 3, 3, and 2 times Wei Li molybdenum instrument is formed on a highly doped silicon substrate 300. The lightly doped epitaxial, "301 dopant concentration is between 10" / cubic centimeter and ιιι / cubic cubic worm crystal layer thickness is between 2 microns and 35 microns. The highly doped The doped material of the hetero-silicon substrate 300 is between 5.0 × 10 cm3 and 1020 cm, and its thickness is between 400 μm and 800 μm. ΐ 二 ϋ: Determined by the size of 2 I inches. From Figure 28, you can clearly see the protruding% Mo Er f Τ production line, which shows an η type. It is worth noting here that this range can be equal to & t by Ϊ Replaced by the diffusion protection ring zone (RDGR). Add the diffusion ring zone or plural protruding diffusion zone to add

Page 11 1232525 V. Description of the invention (6) ---- Remove the first photoresist (PR!) From the forming. The shaped mask dielectric layer 3 03b represents a region forming a protruding diffusion protection ring, and the shaped mask dielectric layer 3 0 3a represents a protruding diffusion gate, ring, or plural protrusions. Area of the diffusion zone. Stomach # Figure IIC. Shown in a water vapour or wet oxygen environment and at a temperature between 9 50 ° C and 1 150 ° C. (: A local silicon oxide (LOCos) system is used to grow an external local silicon oxide field oxide layer 304b within the external field emulsion region (OFOXR) and an internal local silicon oxide Field oxide layer = gate, each of the plurality protruding from the diffusion ring or the complex, protruding from the mother of the expansion ▼. The thickness of the internal / external oxide layer 304a / 3〇4b is between 600,000,00,00,00,0 + 0, I + f forming the mask dielectric layer 3033 / 3〇313 series using hot phosphoric acid, to remove, ... ,, and then an automatic alignment of The H species and the / Λ electric expansion dopant diffuse across the convex diffusion: guard = two f = :: ί gate region (RDG) or a plurality of convex diffusion rings or band-shaped hafnium oxide layer 3 0 2a / 3〇2b is implanted in the surface portion of the light layer 301 to form an ion implantation region 3305a / 〇U 5 b 〇 Figure 2E shows that a dopant drive-in The diffusion protection ring 3 0 5d and a convex private wind 1U convex layer 3202b / 3〇2a and the outer two convex inner mm, the forming pad oxide 304a is also thickened at the same time; Oxygen field oxide layer 3 0 4b / Definition ί mask photoresist mask (the PR2) of the contact region forming step. A first barrier metal mask (the PR2) surrounded

Page 12, 1232525 5. Description of the invention (Ό Figure 2F shows that the shaped thermal dioxide fragment layer 302d / 302c and the 3 0 4 c system use buffered hydrofluoric acid to add the second mask photoresistor (PR2) and A wafer dynamic alignment silicidation process is performed to form a part of the surface of the Au guard ring 3 0 5 d, and an exposed metal layer 3 0 5 d formed by the plurality of concave guard rings 3 0 5 d surrounded by the diffusion gate 305 c. The a system is formed on a part of the surface of the metal silicon layer 3 0 2 d and a part of the surface of the material layer 304 d. The refractory metal petrification includes at least one silver (Ag) and aluminum (A1) Above the metal layer. Here it is worth noting that it is a multi-layer structure of a Schottky barrier metal 3 0 6 a. From Figure 2F, we can clearly see the overall advantages of the Schottky base (LBJPS). And features: ^ internal partial oxidation of silicon oxide outside the second photoresist (PR2) is removed; then, the forming and cleaning process is removed; a conventional self-propelled silicide layer 306a is extended at the protrusion The protruding diffusion gate 3 0 5 c and the protruding semiconductor surface and the protruding diffusion Above the surface of Shi Xi; next, a silicide layer 3 0 6 a, the thermal dioxide and the external local silicon oxide field oxidize the metal silicide layer 3 0 6 a is an object layer, and the formed metal layer 3 〇7a or gold (Au) layer is formed as a barrier. A metal layer such as aluminum may be used instead of the metal petrified layer. The above-mentioned first type of local oxidized metal ballast has the following devices compared with the prior art. The narrow inflow adjustment is more complex than the basic one with a special or Xiao supply ring, and the extension and expansion of the surface is extended to extend the mouth of the convex convex bird. Type oxygen comes out a convex second round of knowledge, then learns to understand the obstacles, the hair shape screen, the original base} by Duote a borrowed Kuan Xiao

Page 13 1232525

(b) The first type of localized silicon oxide of the present invention provides a protruding diffusion protection ring and a stub ring of a Schottky rectifier with a small contact surface or a deep protruding diffusion gate with a small contact surface or a plurality of protruding projections. . / & To obtain a large breakdown voltage device from the low current to the rectification of the cis-specific contact Xiao Xiao produced by the earth barrier, the screen barrier is electrically connected to the junction of the Xiao Xiao Xiao to form divergent oxygen The surface layer of the surface layer of the body and the first half of the first half of the trapped worms exposed the number of concavity and confounding complex light. } Provide a drop (C raises a pressure (d) The first type of local oxide stone of the present invention is ^ ^ 祖祖彬 知 料 正 # 主 '' ^ Xiji's interface squeezes the soil and the Schottky rectifier is quite smooth ^ ^ ^ + Enter the step coverage of the metal under forward current operation. Please refer to Figures 3A to 3E, which shows the fabrication of a second kind of the present invention. The continuation of the LBJps rectifier based on a type of local silicon oxide interface extrusion process and the schematic cross-sectional view of Figure 2B. Figure 2A shows that ion implantation is not performed in an automatic alignment method, and a A dopant of the second conductivity type is implanted across the pad oxide layer 302 within the surface portion of the lightly doped siliceous silicon layer 301 to form a compensation ion implantation region 308b / 3. 0 8a is in the external / internal field oxide region (〇f〇xr / if〇xr). Figure 3B shows the system in a water vapor or wet oxygen environment at 95 π and

Page 14 1232525 V. Description of the invention (9) A local oxide scale (LOCOS) process is performed at an oxidation temperature between 1 1 0 0 ° C to form an external local silicon field oxide layer 304b on Within the external field oxide region (0 F 0 XR) and an internal local oxide field oxide layer 304 a within the internal field oxide region (IF0XR) and simultaneously implant the compensation ion implantation region 308a / 308b Driving in to form the first conductive type compensation diffusion layer 3 0 8d / 3 0 8 c. The compensation diffusion layer 3 0 8 (1/3 0 8 (:) will have a lower dopant distribution of the first conductivity type than the dopants within the lightly doped epitaxial silicon layer 3 0 1. FIG. 3C shows that the forming mask dielectric layer 30 3b / 3 0 3a is added and removed by using hot phosphoric acid; and then, the second conductivity type dopant is ion-distributed in an automatic alignment manner. The lightly doped stupid spar layer 301 which is implanted across the protruding diffusion protection ring region (RDGR) and the protruding diffusion gate region (RDG) across the shaped pad oxide layer 30 2 b / 302a Within the surface portion, the second conductivity type ion implantation area 305b / 305a is formed. The dose of the ion implantation is between 1013 / cm2 and 1014 / cm2. Figure 3D shows an impurity flooding Process to form a protruding diffusion guard ring 3 0 5 d and a protruding diffusion gate 3 0 5 c and drive the compensation diffusion layer 3 0 8 d / 3 0 8 c at the same time; similarly, the The outer / internal localized silicon field oxide layers 304b / 304a and the forming pad oxide layer 3002b / 302a are also thickened at the same time. Fig. 3D again shows the implementation of a second mask Step (PR2) to define a metal contact area surrounded by the shaped second mask photoresist (PR2), as shown in Figure 2E. Figure 3E shows the thermal dioxide within the metal contact area. Shi Xi layer 3 0 2 d / 3 0 2 c and the internal local silicon field oxide layer 3 0 4 c

1232525 V. Description of the Invention (Photo) Photoresistor (PR2) is automatically formed on a part of the surface of the surface. The diffusion gates protrude more than the first type. Schottky squeezes out Schott shock and hydrofluoric acid. Removing, and then removing the forming second mask); then, a metal silicide layer 306a is formed by a conventional silicidation process; then, a forming metal layer 3 0 7 a the metal silicide layer 3 0 6 a On the surface of the formed thermal silicon dioxide layer 3 0 2 e and a part of the external local silicon field oxide layer 3 0 4 d, as shown in FIG. 2F. It is worth emphasizing here that the convex 3 0 5 c can be replaced by a diffusion ring or a plurality of convex diffusion belts surrounded by the convex diffusion protection ring 3 0 5 d. Describe the LBJPS rectifier. Obviously, compared with the first type of local silicon oxide-based junction rectifier, the advantages of the second type of local silicon oxide-based junction rectifier (LBJPS) and The characteristics can be summarized as follows: (a) The second type of locally oxidized silicon-based junction squeeze Schottky rectifier of the present invention provides a compensation diffusion layer under each of the plurality of recessed semiconductor surfaces to reduce the protruding diffusion gate and The dopant concentration of the lightly doped epitaxial silicon layer surrounded by the protruding diffusion guard ring can increase the area of the Schottky contact to further increase the forward working current. The first base of the entire plane, the special table, the body, the guide, the half of the surface, the recessed base, the silicon complex, the oxygen in the local layer, the second layer, the second one, and the second one, and the second one is reissued. Corresponding to the high barrier screen Kit Shaw. Low efficiency, low drop, and low power can be used, such as streaming, video, electricity, electricity, leakage, and reverse.

Page 16 1232525 V. Description of the invention (11) ^ (c) The second type of locally oxidized silicon-based junction squeeze Schottky rectifier of the present invention. A compensation diffusion layer is provided to eliminate the protruding diffusion protection ring and the protrusion. The curvature effect of the junction of the diffusion gate, so a large reverse breakdown voltage can be easily obtained. Please refer to FIG. 4A and FIG. 4B, which show the simplified process steps and cross-sectional views of FIG. 2D. FIG. 4A shows that after performing a dopant driving process, a hard mask layer 309 is formed on a structure surface formed; then, a second mask photoresist (PR2) step is performed. Define a metal contact area described in Figure 2E. The hard mask layer is composed of silicon nitride and is deposited by using LPCVD or plasma CVD, and the thickness is between 100 angstroms and 300 angstroms. FIG. 4B shows that the hard mask layer a of the a, which is located outside the second mask photoresist (PR2), is removed by anisotropic dry etching method. Then, it is located at the second mask The thermal dioxide, silicon layer 3 0 2 d / 3 0 2 c and the internal local silicon oxide field oxide layer 3 0 4 c outside the mask photoresist (PR 2) are added using buffered hydrofluoric acid. Removing; then, removing the formed second mask photoresist (PR 2) and performing a wafer cleaning process; then, performing a conventional automatic alignment silicidation process to form a metal silicide layer 3 0 6 a in the metal contact area Within; then, a shaped metal layer 3 0 7 a is formed, as described in Figure 2E. As can be clearly seen from Figure 4B, compared with Figure 2F, the forming.

Page 17 1232525 5. Description of the invention (12) The hard cover curtain layer 3 0 9a is used not only as an etching stop layer for forming a thick metal layer but also as a purification or protective layer. Please refer to FIG. 5A and FIG. 5B, which illustrate the simplified process steps and a schematic cross-sectional view of FIG. According to the same process steps described in Figure 4A, Figure 5A can be easily obtained. Similarly, according to the same process steps described in FIG. 4B, FIG. 5B can be easily obtained. Compared with FIG. 3E, FIG. 5B provides a formed hard mask layer 309a as an etch stop layer for forming a thick metal layer (not shown) and as a passivation or protection layer.

It is worth emphasizing again that the protruding diffusion gate 3 0 5 c shown in FIG. 4B and FIG. 5B may be replaced by a plurality of protruding diffusion rings or a plurality of protruding diffusion bands. In addition, the metal fossilization layer 3 06 a can be removed, and a shaped metal layer such as aluminum can be directly formed on the metal contact area. Although the present invention is particularly illustrated and described with reference to the attached examples or connotations, it is only a representative statement and not a limitation. Furthermore, the present invention is not limited to the listed details. Those skilled in the art can also understand that changes of various shapes or details can be made without departing from the true spirit and scope of the present invention, but also belong to the present invention. Fans of invention.

Page 18 1232525 The diagram briefly illustrates the basic barrier control of an IS) garden. 〇 Partial and local control system, partial local control system, simple fault control system, groove oxidation, short oxidation process, step oxidation process, oxidation process, chart 1A and chart 1 B shows a schematic cross-sectional view of two different Schottky current converters of the prior art, of which FIG. 1A shows a schematic cross-sectional view of a junction screen tetroki (JBS) rectifier and FIG. 1B shows a metal-oxygen half barrier Schottky ( A schematic view of a TMBS) rectifier. Figures 2A to 2F show cross-sectional views of the manufacturing steps for manufacturing a second type silicon-based extruded Schottky (LBJPS) rectifier of the present invention. / P Figures 3A to 3E show the continuation of Figure 2B and its schematic cross-sectional view of the fabrication of a second type silicon-based junction extrusion Schottky (LB JPS) rectifier of the present invention. Fig. 4A and Fig. 4B show the connection diagrams / second D-steps and schematic cross-sectional diagrams of the manufacture of a third type of silicon-based junction extruded Schottky (LBJPS) rectifier according to the present invention. Only FIGS. 5A and 5B show the steps and the schematic cross-sectional view of the process of manufacturing the fourth type silicon-based junction extruded Schottky (LBJPS) rectifier of the present invention. It only represents the description of the drawing number. 3 0 0 Highly doped silicon substrate 3 0 2 Pad oxide layer 302c / 302d Thermal silicon dioxide layer 303 Mask dielectric layer 304a / 304c Local silicon oxide 3 0 1 Lightly doped epitaxial silicon Layer 3 0 2a / 3 0 2b to form a pad oxide layer 302e to form a thermal dioxide layer 303a / 303b to form a mask dielectric sound field oxide layer stomach

1232525 Brief description of the diagram 3 0 4 b / 3 0 4 d External local silicon field oxide layer 305a / 305b Ion implanted area 305c Protruded diffusion gate 3 0 5 d Protruded diffusion protection ring 3 0 6 a Metal silicide Layer 307a Formed metal layer 308 a / 308b Compensated ion implantation area 308c / 308d / 308e / 308f Compensated diffusion layer 3 0 9 Hard cover curtain layer 309a Hard cover curtain layer

Page 20

Claims (1)

1232525 6. Scope of patent application 1. A partially oxidized Schottky rectifier based on a silicon oxide interface, comprising at least: a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises at least one lightly doped epitaxial semiconductor layer On a highly doped semiconductor substrate; a protruding diffusion guard ring of a second conductivity type is surrounded by an external local silicon field oxide layer and is formed on a surface portion of the lightly doped epitaxial semiconductor layer Wherein a protruding diffusion structure of the second conductivity type is surrounded by the protruding diffusion protection ring and is simultaneously formed in a surface portion of the lightly doped epitaxial semiconductor layer; A plurality of recessed semiconductor surfaces are formed on the lightly doped epitaxial semiconductor layer surrounded by the protruding diffusion guard ring and the protruding diffusion structure, wherein the plurality of recessed semiconductor surfaces are oxidized by removing a plurality of internal local silicon oxide fields. A metal contact layer is formed on at least one metal contact region, wherein the metal contact region includes at least a portion of the surface of the protruding diffusion protection ring, the plurality of recessed semiconductor surfaces, and the protruding diffusion The surface of the structure. 2. The locally oxidized Schottky rectifier as described in item 1 of the scope of patent application, wherein the external local silicon oxide field oxide layer and the multiple internal local silicon oxide field oxide layers are in a water It is formed by a local silicon oxide (LOCOS) process in a vapor or wet oxygen environment. 3. The partially oxidized silicon-based junction extrusion stopper as described in item 1 of the scope of the patent application, wherein the protruding diffusion protection ring and the protruding diffusion structure are Page 21 1232525 6. The scope of the patent application: The second conductive type dopant is implanted in the outer local silicon oxide field oxide layer and the plurality of inner local silicon oxides in an automatic alignment manner across the forming pad oxide layer. Within the surface portion of the lightly doped epitaxial semiconductor layer surrounded by a field oxide layer. 4. The locally oxidized Schottky rectifier as described in item 1 of the scope of the patent application, wherein the first conductive type complex compensation diffusion layer is passed through before a local silicon oxide (LOCOS) process is performed. An ion implantation window surrounded by a forming mask dielectric layer and implanting the second conductivity type dopant across the pad oxide layer on the surface of the lightly doped epitaxial semiconductor layer under the plurality of recessed semiconductor surfaces Within the section. 5. The locally oxidized Schottky rectifier according to item 1 of the scope of patent application, wherein the protruding diffusion structure includes at least one protruding diffusion grid, a plurality of protruding diffusion rings, or a plurality of protruding diffusions. band. 6. The locally oxidized Schottky rectifier as described in item 1 of the scope of the patent application, wherein the contact metal layer includes at least a metal petrochemical layer formed by an auto-aligned petrochemical process . 7. The locally oxidized Schottky rectifier as described in item 1 of the scope of patent application, wherein the protruding diffusion protection ring and the protruding diffusion structure are on the lightly doped epitaxial semiconductor layer. The formed oxide layer is removed by a conventional diffusion process using a liquid source and a solid source. Page 22 1232525 6. Scope of patent application or a gas source to form. 8. The locally oxidized Schottky rectifier as described in item 1 of the scope of the patent application, wherein the metal contact area is formed by a hard mask layer on the external local silicon oxide field oxide layer, the A plurality of internal silicon oxide field oxide layers and a thermal silicon dioxide layer placed on the protruding diffusion protection ring and the protruding diffusion structure are formed by pre-forming. 9. The locally oxidized Schottky rectifier as described in item 1 of the scope of the patent application, wherein the metal contact area is formed with a mask photoresist layer on the external local silicon field oxide layer, The plurality of internal partial silicon oxide field oxide layers, and the thermally oxidized dioxide layer on the protruding diffusion protection ring and the protruding diffusion structure are formed by pre-forming. 1 0. A locally oxidized Schottky rectifier based on a silicon oxide interface, comprising at least: a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises at least a lightly doped epitaxial silicon layer formed on a highly doped On a heterosilicon substrate; a protruding diffusion protection ring of a second conductivity type is surrounded by an external local silicon field oxide layer and is formed on a surface portion of the lightly doped epitaxial silicon layer, wherein the first A protruding diffusion structure of the two-conductivity type is surrounded by the protruding diffusion guard ring and is simultaneously formed in the surface portion of the lightly doped epitaxial silicon layer; a plurality of recessed semiconductor surfaces are formed by the protruding diffusion guard ring. And this Page 23 1232525 6. The scope of the patent application is over the lightly doped epitaxial silicon layer surrounded by a protruding diffusion structure, wherein the plurality of recessed semiconductor surfaces are formed by removing the surface portion of the lightly doped epitaxial silicon layer. Is formed by a plurality of internal localized oxidized field oxide layers on the plurality of compensation compensation diffusion layers; a metal contact region is formed on a part of the surface of the protruding diffusion protection ring, the plurality of compensation compensation diffusion layers, and the Protruding over the diffusion structure; and a Schottky metal layer formed at least on the metal contact region. 11. The locally oxidized Schottky rectifier as described in item 10 of the scope of patent application, wherein the protruding diffusion structure includes at least one protruding diffusion grid, a plurality of protruding diffusion bands, or a plurality of protruding Diffusion ring. 12. The locally oxidized Schottky rectifier as described in item 10 of the scope of patent application, wherein the complex compensation diffusion layer is formed over the forming mask silicon nitride before a local silicon oxide process is performed. A pad oxide layer outside the layer is formed by implanting the second conductivity type dopant within the surface portion of the lightly doped epitaxial silicon layer. 13. The locally oxidized Schottky rectifier as described in item 10 of the scope of patent application, wherein the protruding diffusion protection ring and the protruding diffusion structure are after removing the forming mask silicon nitride layer. A second conductive type dopant is implanted over the lightly doped epitaxial silicon across a forming pad oxide layer located between the outer local silicon oxide field oxide layer and the plurality of inner local silicon oxide field oxide layers. Formed within the surface portion of the layer. On the 24th part of the seed body compaction, an air surface scattering number is borrowed and extended by a base to extend the back or silicon convex, and the source oxygen and the object part of the layer are cyclized and fixed to protect the oxygen. The pads of the field are described as scattered, expanded and expanded to form a source of oxygen, and the liquid between the convex parts of the body. The middle layer of the surrounding area of the bureau is used for foreign objects. The flow level field is applied in order to eliminate the fragmentation system such as base deoxygenation, and it is particularly popular in the Department of Expansion and the Xiao System Bureau. It is connected to the base by the Yang Jihua Yang Huahuahua Bao Bao, the low oxygen department, and the gold bureau. Each item in the 10th Xiao Xiao formation has formed its own advantage. Cheng Lai specializes in making equipment, and invites fluidization to expand the application. As the benchmark plus_Special source 15 Xiaodong 1232525 6. Scope of patent application 1 6. A locally oxidized Schottky rectifier with a silicon oxide interface, comprising at least: a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate includes at least a lightly doped epitaxial silicon layer formed on a highly doped silicon substrate; On a heterosilicon substrate; a protruding diffusion protection ring of a second conductivity type is surrounded by an external local silicon field oxide layer and is formed on a surface portion of the lightly doped epitaxial silicon layer, one of which is convex The out diffusion structure includes at least one protruding diffusion gate, a plurality of protruding diffusion rings, or a plurality of protruding diffusion bands surrounded by the protruding diffusion protection ring and formed on the surface portion of the lightly doped epitaxial silicon layer at the same time. A plurality of recessed semiconductor surfaces are formed on the lightly doped epitaxial silicon layer between the protruding diffusion guard ring and the protruding diffusion structure, wherein the plurality of Page 25 1232525 6. Patent application scope The recessed semiconductor surface is formed by removing a plurality of internal silicon oxide field oxide layers; a metal contact region is formed on a part of the surface of the protruding diffusion protection ring, and the plurality of recessed semiconductors A surface, and the protruding diffusion structure; and a Schottky metal layer is formed at least on the metal contact region. 17. The locally oxidized Schottky rectifier as described in item 16 of the scope of the patent application, wherein the first compensation type diffusion compensation layer is formed on the surface of the plurality of recessed semiconductors and the external partial oxidation. Within the surface portion of the lightly doped epitaxial silicon layer below the silicon field oxide layer. 18. The locally oxidized Schottky rectifier as described in item 16 of the scope of the patent application, wherein the external local silicon oxide field oxide layer and the plurality of internal local silicon oxide field oxide layers are combined in one Water vapor or wet oxygen environment and an oxidation temperature between 95 ° C and 110 ° C are formed by a local silicon oxide (LOCOS) process. 19. The locally oxidized Schottky rectifier according to item 16 of the scope of patent application, wherein the protruding diffusion structure includes at least one protruding diffusion gate, a plurality of protruding diffusion rings, or a plurality of protruding Diffusion zone. 20. The locally oxidized Schottky rectifier as described in item 16 of the scope of patent application, wherein the protruding diffusion protection ring and the protruding diffusion structure Page 26 1232525 6. Scope of patent application It is formed by using a liquid source, a solid source, or a gas source by ion implantation or a thermal diffusion process at the same time. IIHHM