TWI714278B - 投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法 - Google Patents

投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法 Download PDF

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Publication number
TWI714278B
TWI714278B TW108134443A TW108134443A TWI714278B TW I714278 B TWI714278 B TW I714278B TW 108134443 A TW108134443 A TW 108134443A TW 108134443 A TW108134443 A TW 108134443A TW I714278 B TWI714278 B TW I714278B
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TW
Taiwan
Prior art keywords
projection lens
mask
plane
image
projection
Prior art date
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TW108134443A
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English (en)
Chinese (zh)
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TW202004367A (zh
Inventor
史蒂芬 安德烈
丹尼爾 戈登
托拉夫 葛納
喬哈尼斯 勞夫
諾伯特 瓦伯拉
瑞卡達 舒納德
桑賈 舒納德
Original Assignee
德商卡爾蔡司Ｓｍｔ有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G03F7/70266—Adaptive optics, e.g. deformable optical elements for wavefront control, e.g. for aberration adjustment or correction
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Mounting And Adjusting Of Optical Elements (AREA)
  • Microscoopes, Condenser (AREA)
TW108134443A 2014-09-15 2015-09-14 投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法 TWI714278B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014218474.6 2014-09-15
DE102014218474.6A DE102014218474A1 (de) 2014-09-15 2014-09-15 Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie

Publications (2)

Publication Number Publication Date
TW202004367A TW202004367A (zh) 2020-01-16
TWI714278B true TWI714278B (zh) 2020-12-21

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TW108134443A TWI714278B (zh) 2014-09-15 2015-09-14 投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法
TW104130274A TWI681258B (zh) 2014-09-15 2015-09-14 投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法

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Country Status (8)

Country Link
US (2) US10048592B2 (enExample)
EP (1) EP3195060B1 (enExample)
JP (2) JP6714595B2 (enExample)
KR (1) KR102469060B1 (enExample)
CN (2) CN111505909A (enExample)
DE (1) DE102014218474A1 (enExample)
TW (2) TWI714278B (enExample)
WO (1) WO2016041805A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014218474A1 (de) * 2014-09-15 2016-03-17 Carl Zeiss Smt Gmbh Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren für die EUV-Mikrolithographie
DE102016205072A1 (de) * 2016-03-29 2017-03-16 Carl Zeiss Smt Gmbh Optisches System für die Mikrolithografie sowie Verfahren zum Betreiben eines optischen Systems für die Mikrolithografie
DE102016212477A1 (de) 2016-07-08 2018-01-11 Carl Zeiss Smt Gmbh Messverfahren und Messsystem zur interferometrischen Vermessung der Abbildungsqualität eines optischen Abbildungssystems
DE102016219330A1 (de) 2016-10-06 2018-04-12 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage und Verfahren zur Verringerung aus dynamischen Beschleunigungen herrührenden Deformationen von Komponenten der Projektionsbelichtungsanlage
WO2018134010A1 (en) * 2017-01-17 2018-07-26 Asml Netherlands B.V. Lithographic apparatus and method
DE102017216679A1 (de) * 2017-09-20 2019-03-21 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage
WO2019072703A1 (en) * 2017-10-11 2019-04-18 Asml Netherlands B.V. FLOW OF OPTIMIZATION OF PROCESS OF FORMATION OF REASONS
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
JP2019124796A (ja) * 2018-01-16 2019-07-25 キヤノン株式会社 結像光学系、画像投射装置およびカメラシステム
DE102019200696B4 (de) * 2019-01-21 2022-02-10 Carl Zeiss Smt Gmbh Vorrichtung, Verfahren und Computerprogram zum Bestimmen einer Position eines Elements auf einer fotolithographischen Maske
JP7357488B2 (ja) * 2019-09-04 2023-10-06 キヤノン株式会社 露光装置、および物品製造方法
CN111381431B (zh) * 2020-05-11 2021-04-13 江苏舜合物联网科技有限公司 投影画面跟随可卷曲屏幕同步升降或同步平移的实现方法
JP2022022912A (ja) * 2020-07-10 2022-02-07 キヤノン株式会社 露光装置および物品製造方法
CN113031201B (zh) * 2021-03-15 2022-02-11 中国科学院长春光学精密机械与物理研究所 一种在轨补偿主镜曲率半径误差影响的调整方法
DE102022208204A1 (de) 2022-08-08 2023-08-31 Carl Zeiss Smt Gmbh Verfahren zur Kompensation von Abbildungsfehlern einer EUV-Projektionsbelichtungsanlage
DE102023130957A1 (de) * 2023-11-08 2025-05-08 Carl Zeiss Smt Gmbh Verfahren zum Bestimmen wenigstens eines Manipulatorfreiheitsgrads, Verfahren zum Definieren wenigstens eines virtuellen Manipulators, Verfahren zum Betrieb einer Projektionsbelichtungsanlage sowie Projektionsbelichtungsanlage

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0987601A2 (en) * 1998-09-17 2000-03-22 Nikon Corporation An exposure apparatus and exposure method using same
US20130128251A1 (en) * 2010-09-15 2013-05-23 Carl Zeiss Smt Gmbh Imaging optical system
TWI681258B (zh) * 2014-09-15 2020-01-01 德商卡爾蔡司Ｓｍｔ有限公司 投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999026278A1 (en) 1997-11-14 1999-05-27 Nikon Corporation Exposure apparatus and method of manufacturing the same, and exposure method
DE19908526A1 (de) * 1999-02-26 2000-08-31 Zeiss Carl Fa Beleuchtungssystem mit Feldspiegeln zur Erzielung einer gleichförmigen Scanenergie
JP2004023020A (ja) * 2002-06-20 2004-01-22 Nikon Corp 投影光学系及び縮小投影露光装置
US6897940B2 (en) * 2002-06-21 2005-05-24 Nikon Corporation System for correcting aberrations and distortions in EUV lithography
DE102004014766A1 (de) 2003-04-02 2004-10-21 Carl Zeiss Smt Ag Verfahren zur Verzeichnungskorrektur in einer mikrolithographischen Projektionsbelichtungsanlage
US6853440B1 (en) 2003-04-04 2005-02-08 Asml Netherlands B.V. Position correction in Y of mask object shift due to Z offset and non-perpendicular illumination
JP2005166778A (ja) * 2003-12-01 2005-06-23 Canon Inc 露光装置、デバイスの製造方法
US7522260B1 (en) * 2004-09-29 2009-04-21 Carl Zeiss Smt Ag Method for correcting astigmatism in a microlithography projection exposure apparatus, a projection objective of such a projection exposure apparatus, and a fabrication method for micropatterned components
JP5069232B2 (ja) * 2005-07-25 2012-11-07 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の投影対物レンズ
TWI366004B (en) 2005-09-13 2012-06-11 Zeiss Carl Smt Gmbh Microlithography projection optical system, microlithographic tool comprising such an optical system, method for microlithographic production of microstructured components using such a microlithographic tool, microstructured component being produced by s
CN100474115C (zh) * 2006-04-04 2009-04-01 上海微电子装备有限公司 光刻机成像光学系统像差现场测量方法
US7894038B2 (en) * 2007-03-14 2011-02-22 Asml Netherlands B.V. Device manufacturing method, lithographic apparatus, and a computer program
EP2048540A1 (en) * 2007-10-09 2009-04-15 Carl Zeiss SMT AG Microlithographic projection exposure apparatus
NL1036108A1 (nl) * 2007-11-09 2009-05-12 Asml Netherlands Bv Device Manufacturing Method and Lithographic Apparatus, and Computer Program Product.
JP2009266886A (ja) * 2008-04-22 2009-11-12 Nikon Corp マスク、マスク保持装置、露光装置及びデバイスの製造方法
JP2009302149A (ja) * 2008-06-10 2009-12-24 Nikon Corp 露光装置およびデバイスの製造方法
JP2010245331A (ja) * 2009-04-07 2010-10-28 Canon Inc 制御装置を備える光学素子駆動装置
DE102010029651A1 (de) 2010-06-02 2011-12-08 Carl Zeiss Smt Gmbh Verfahren zum Betrieb einer Projektionsbelichtungsanlage für die Mikrolithographie mit Korrektur von durch rigorose Effekte der Maske induzierten Abbildungsfehlern
DE102011080437A1 (de) 2010-09-30 2012-04-05 Carl Zeiss Smt Gmbh Abbildendes optisches System für die Mikrolithographie
JP6410406B2 (ja) * 2012-11-16 2018-10-24 キヤノン株式会社 投影光学系、露光装置および物品の製造方法
JP6013930B2 (ja) * 2013-01-22 2016-10-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2014154721A (ja) * 2013-02-08 2014-08-25 Toshiba Corp フォトマスク、フォトマスク作成装置およびフォトマスクの作製方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0987601A2 (en) * 1998-09-17 2000-03-22 Nikon Corporation An exposure apparatus and exposure method using same
US20130128251A1 (en) * 2010-09-15 2013-05-23 Carl Zeiss Smt Gmbh Imaging optical system
TWI681258B (zh) * 2014-09-15 2020-01-01 德商卡爾蔡司Ｓｍｔ有限公司 投影透鏡、投影曝光裝置、與ｅｕｖ微影的投影曝光方法

Also Published As

Publication number Publication date
KR102469060B1 (ko) 2022-11-22
US10591825B2 (en) 2020-03-17
KR20170053713A (ko) 2017-05-16
JP2017528775A (ja) 2017-09-28
TW201621470A (zh) 2016-06-16
TWI681258B (zh) 2020-01-01
JP7208953B2 (ja) 2023-01-19
CN107077074B (zh) 2020-04-10
US20170168399A1 (en) 2017-06-15
US20180364583A1 (en) 2018-12-20
CN111505909A (zh) 2020-08-07
JP6714595B2 (ja) 2020-06-24
EP3195060A1 (en) 2017-07-26
EP3195060B1 (en) 2018-09-05
WO2016041805A1 (en) 2016-03-24
JP2020149070A (ja) 2020-09-17
US10048592B2 (en) 2018-08-14
TW202004367A (zh) 2020-01-16
CN107077074A (zh) 2017-08-18
DE102014218474A1 (de) 2016-03-17

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