TWI713800B - 移位器 - Google Patents

移位器 Download PDF

Info

Publication number
TWI713800B
TWI713800B TW106139558A TW106139558A TWI713800B TW I713800 B TWI713800 B TW I713800B TW 106139558 A TW106139558 A TW 106139558A TW 106139558 A TW106139558 A TW 106139558A TW I713800 B TWI713800 B TW I713800B
Authority
TW
Taiwan
Prior art keywords
oxide semiconductor
metal oxide
semiconductor transistor
output node
inverting output
Prior art date
Application number
TW106139558A
Other languages
English (en)
Chinese (zh)
Other versions
TW201830861A (zh
Inventor
坂口薫
Original Assignee
日商艾普凌科有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商艾普凌科有限公司 filed Critical 日商艾普凌科有限公司
Publication of TW201830861A publication Critical patent/TW201830861A/zh
Application granted granted Critical
Publication of TWI713800B publication Critical patent/TWI713800B/zh

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/0185Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507Interface arrangements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/0185Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507Interface arrangements
    • H03K19/018521Interface arrangements of complementary type, e.g. CMOS
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356104Bistable circuits using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
TW106139558A 2017-02-09 2017-11-15 移位器 TWI713800B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-022483 2017-02-09
JP2017022483A JP2018129727A (ja) 2017-02-09 2017-02-09 レベルシフタ

Publications (2)

Publication Number Publication Date
TW201830861A TW201830861A (zh) 2018-08-16
TWI713800B true TWI713800B (zh) 2020-12-21

Family

ID=63037987

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106139558A TWI713800B (zh) 2017-02-09 2017-11-15 移位器

Country Status (5)

Country Link
US (1) US10418997B2 (enExample)
JP (1) JP2018129727A (enExample)
KR (1) KR20180092804A (enExample)
CN (1) CN108418576A (enExample)
TW (1) TWI713800B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10986154B2 (en) * 2016-05-16 2021-04-20 Glide Talk Ltd. System and method for interleaved media communication and conversion
CN112073048B (zh) * 2020-09-02 2022-11-04 敦泰电子(深圳)有限公司 电平移位电路
CN112311207A (zh) * 2020-11-17 2021-02-02 北京集创北方科技股份有限公司 电压转换装置、电源芯片及电子设备
CN113078896B (zh) * 2021-02-24 2024-08-23 广州安凯微电子股份有限公司 一种低输入电源幅度的电平转换电路
WO2023038314A1 (ko) * 2021-09-09 2023-03-16 광운대학교 산학협력단 에너지 효율 및 입력전압의 범위를 개선한 레벨 시프터
US11855630B2 (en) 2022-05-31 2023-12-26 Texas Instruments Incorporated Floating high-voltage level translator with adaptive bypass circuit
CN117318697B (zh) * 2023-09-15 2024-06-14 辰芯半导体(深圳)有限公司 电平移位电路和电源设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM517481U (zh) * 2015-05-21 2016-02-11 修平學校財團法人修平科技大學 電壓位準轉換器
TW201626719A (zh) * 2014-11-25 2016-07-16 英特爾股份有限公司 電壓準位移位器電路

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59214325A (ja) * 1983-05-19 1984-12-04 Seiko Epson Corp レベルシフト回路
JP3144166B2 (ja) * 1992-11-25 2001-03-12 ソニー株式会社 低振幅入力レベル変換回路
JPH10336007A (ja) * 1997-05-29 1998-12-18 Fujitsu Ltd レベルコンバータ、出力回路及び入出力回路
US6268755B1 (en) * 1997-11-04 2001-07-31 Texas Instruments Incorporated MOSFET predrive circuit with independent control of the output voltage rise and fall time, with improved latch immunity
US7196699B1 (en) * 1998-04-28 2007-03-27 Sharp Kabushiki Kaisha Latch circuit, shift register circuit, logical circuit and image display device operated with a low consumption of power
JP4063982B2 (ja) * 1998-12-04 2008-03-19 松下電器産業株式会社 レベルシフタ回路およびそれを用いた半導体装置
GB2349996A (en) * 1999-05-12 2000-11-15 Sharp Kk Voltage level converter for an active matrix LCD
JP2001036398A (ja) 1999-07-16 2001-02-09 Matsushita Electric Ind Co Ltd レベルシフタ回路
JP3665633B2 (ja) * 2002-09-20 2005-06-29 株式会社東芝 半導体集積回路
JP2005102086A (ja) * 2003-09-26 2005-04-14 Renesas Technology Corp 半導体装置およびレベル変換回路
JP4502190B2 (ja) * 2004-06-08 2010-07-14 ルネサスエレクトロニクス株式会社 レベルシフタ、レベル変換回路及び半導体集積回路
JP4502767B2 (ja) * 2004-09-29 2010-07-14 株式会社リコー レベルシフト回路
JP2006135560A (ja) * 2004-11-05 2006-05-25 Matsushita Electric Ind Co Ltd レベルシフト回路およびこれを含む半導体集積回路装置
JP2006287797A (ja) * 2005-04-04 2006-10-19 Nec Electronics Corp レベル変換回路
US7355446B2 (en) * 2005-05-20 2008-04-08 Samsung Electronics Co., Ltd. Voltage conversion circuit with stable transition delay characteristic
JP4758726B2 (ja) * 2005-10-19 2011-08-31 パナソニック株式会社 レベルシフト回路
US7834662B2 (en) * 2006-12-13 2010-11-16 Apple Inc. Level shifter with embedded logic and low minimum voltage
KR100856128B1 (ko) * 2007-02-12 2008-09-03 삼성전자주식회사 고속 동작이 가능한 레벨 쉬프터 및 그 방법
JP2009260804A (ja) * 2008-04-18 2009-11-05 Toshiba Corp パワーオン検知回路およびレベル変換回路
US7839171B1 (en) * 2009-05-19 2010-11-23 Advanced Micro Devices, Inc. Digital level shifter and methods thereof
US8115514B2 (en) * 2009-06-02 2012-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-charged high-speed level shifters
JP5361685B2 (ja) * 2009-12-01 2013-12-04 株式会社東芝 半導体集積回路
JP5491319B2 (ja) * 2010-08-16 2014-05-14 ルネサスエレクトロニクス株式会社 表示ドライバ回路
JP2013131964A (ja) * 2011-12-22 2013-07-04 Renesas Electronics Corp レベルシフト回路及び表示装置の駆動回路
JP5838141B2 (ja) * 2012-02-27 2015-12-24 ルネサスエレクトロニクス株式会社 半導体集積回路
JP2013187712A (ja) 2012-03-07 2013-09-19 Renesas Electronics Corp レベルシフタ回路及び半導体集積回路並びにレベルシフタ回路の制御方法
JP2014003541A (ja) * 2012-06-20 2014-01-09 Toshiba Corp 半導体集積回路、および、スイッチ装置
KR101931408B1 (ko) * 2012-08-01 2018-12-20 르네사스 일렉트로닉스 가부시키가이샤 레벨 시프트 회로, 반도체 장치
US9197200B2 (en) * 2013-05-16 2015-11-24 Dialog Semiconductor Gmbh Dynamic level shifter circuit
SG11201509704WA (en) * 2013-06-11 2015-12-30 Agency Science Tech & Res Circuit arrangement and method of operating the same
JP2015012351A (ja) * 2013-06-27 2015-01-19 マイクロン テクノロジー, インク. 半導体装置
US9537478B2 (en) * 2014-03-06 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9577626B2 (en) * 2014-08-07 2017-02-21 Skyworks Solutions, Inc. Apparatus and methods for controlling radio frequency switches
US9509308B2 (en) * 2014-09-30 2016-11-29 Synaptics Incorporated Supply-modulation cross domain data interface
US9257973B1 (en) * 2014-11-04 2016-02-09 Texas Instruments Incorporated Supply-state-enabled level shifter interface circuit and method
US9490780B2 (en) * 2014-12-18 2016-11-08 Intel Corporation Apparatuses, methods, and systems for dense circuitry using tunnel field effect transistors
US9917588B2 (en) * 2015-07-08 2018-03-13 Nxp B.V. Level shifter and approach therefor
US9954527B2 (en) * 2015-09-29 2018-04-24 Nvidia Corporation Balanced charge-recycling repeater link
US9584303B1 (en) * 2015-10-28 2017-02-28 Futurewei Technologies, Inc. Reference-less frequency detector with high jitter tolerance
DE102016109114B4 (de) * 2016-05-18 2025-06-18 Infineon Technologies Ag Pegelwandler-Schaltkreis, sowie Messanordnung und Chip mit einem solchen Pegelwandler-Schaltkreis

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201626719A (zh) * 2014-11-25 2016-07-16 英特爾股份有限公司 電壓準位移位器電路
TWM517481U (zh) * 2015-05-21 2016-02-11 修平學校財團法人修平科技大學 電壓位準轉換器

Also Published As

Publication number Publication date
CN108418576A (zh) 2018-08-17
US10418997B2 (en) 2019-09-17
KR20180092804A (ko) 2018-08-20
JP2018129727A (ja) 2018-08-16
TW201830861A (zh) 2018-08-16
US20180226971A1 (en) 2018-08-09

Similar Documents

Publication Publication Date Title
TWI713800B (zh) 移位器
US8154323B2 (en) Output driver operable over wide range of voltages
CN107222196B (zh) 半导体器件
CN106899288B (zh) 电平转换电路
TWI737299B (zh) 緩衝電路與緩衝方法
US8482329B2 (en) High voltage input receiver with hysteresis using low voltage transistors
US9444451B2 (en) Switch circuit
US11979155B2 (en) Semiconductor integrated circuit device and level shifter circuit
US20110298519A1 (en) Level shifter
JP2017212490A (ja) Cmos出力回路
TWI818150B (zh) 電壓偵測器
KR100285979B1 (ko) 전압레벨 변환회로
US20080204078A1 (en) Level shifter for preventing static current and performing high-speed level shifting
US7859305B2 (en) Input/output circuit
JP2988430B2 (ja) レベル変換回路
JP6971941B2 (ja) 半導体装置
TWI854165B (zh) 延遲電路
JP2005150989A (ja) レベルシフト回路
TWI865010B (zh) 位準轉換器
US11264989B1 (en) Semiconductor device
JP7395390B2 (ja) 半導体装置
US10763849B2 (en) Semiconductor integrated circuit
US8593178B2 (en) CMOS logic circuit
JP6318908B2 (ja) インターフェース回路
US20120062274A1 (en) Schmitt circuit

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees