TWI713677B - 高生產力浸泡退火系統 - Google Patents

高生產力浸泡退火系統 Download PDF

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TWI713677B
TWI713677B TW106101335A TW106101335A TWI713677B TW I713677 B TWI713677 B TW I713677B TW 106101335 A TW106101335 A TW 106101335A TW 106101335 A TW106101335 A TW 106101335A TW I713677 B TWI713677 B TW I713677B
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傑寇柏 纽曼
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Abstract

本文中所述的實施例係關於用於熱處理基板的裝置及方法。在一個實施例中，處理系統包括耦合至複數個裝載閘腔室的工廠介面。該複數個裝載閘腔室耦合至收容自動機的傳輸腔室。熱處理腔室耦合至傳輸腔室，且自動機被配置為在裝載閘腔室及熱處理腔室之間傳輸基板。多基板支架（其安置在熱處理腔室內）旋轉以促進高效的基板熱處理。安置在端口充氣部中的氣幕裝置提供處理腔室及傳輸腔室之間的環境隔離，同時允許在熱處理腔室及傳輸腔室之間進行高效的基板傳輸。

Description

高生產力浸泡退火系統
本揭示案的實施例大體而言係關於基板的熱處理。更特定言之，本文中所述的實施例係關於用於浸泡退火的裝置及方法。
加熱裝置通常用在半導體工業中以供處理基板。一般而言，一般存在加熱裝置的兩個板配置。第一者為批次系統，其中多個基板（亦即25-200個基板）被加載進管狀爐且緩慢加熱至所需溫度。批式系統可被視為溫度平衡設備之處在於，爐壁大約處於與加熱元件及被加熱之基板相同的溫度下。批式系統一般稱為「熱壁系統」，因為爐壁處於高溫下。批式系統的主要優點是同時處理許多基板的能力，此造成每個基板的成本減少。然而，批式系統遭受若干缺點，其中之一是可用以提高或降低基板溫度的速度。批式熔爐的大的熱質量防止溫度快速改變，且導致相對長的處理時間（範圍從約15分鐘到數小時或更久）。
第二配置是快速熱處理（RTP），其中將輻射能用作能源來在小的處理容積中加熱單一基板。例如，RTP系統一般包括用於固持基板的基板支架及發射用於加熱基板之光能的光源。在熱處理期間，依據所需的溫度狀態在受控的條件下加熱基板。
RTP系統一般在非平衡狀態下操作。一般相對於經加熱基板冷卻腔室的壁，且該等壁可稱為「冷壁」系統。RTP系統的優點是快速改變基板溫度的能力，此允許可在一秒及數分鐘之間的短的加熱循環。然而，RTP系統的一個缺點是每個受處理基板的成本，因為是針對一次處理單一基板而裝備系統。
據此，在本領域中存在改良基板退火裝置的需要。
在一個實施方式中，提供了一種基板處理裝置。該裝置包括熱處理腔室，該熱處理腔室包括：可旋轉基板支架，該可旋轉基板支架被調整尺寸為在該可旋轉基板支架上支撐複數個基板；及熱源，該熱源安置在該可旋轉基板支架上方或下方。傳輸腔室，該傳輸腔室耦合至該熱處理腔室，且基板傳輸設備安置在該傳輸腔室內。充氣壁，定義端口充氣部，且從該熱處理腔室延伸進該傳輸腔室，且一沖洗設備耦合至該端口充氣部內的該等充氣壁。第一裝載閘腔室耦合至該傳輸腔室，而第二裝載閘腔室耦合至該傳輸腔室。該第一裝載閘腔室及該第二裝載閘腔室耦合至該熱處理腔室對面的該傳輸腔室。
在另一實施例中，提供了一種基板處理裝置。該基板處理裝置包括：熱處理腔室，該熱處理腔室具有主體，該主體定義處理容積；及氣體分佈設備，該氣體分佈設備安置在該處理容積內。可旋轉基板支架安置在該氣體分佈設備對面的該處理容積內，且該可旋轉基板支架被調整尺寸為在該可旋轉基板支架上支撐複數個基板。熱源安置在該可旋轉基板支架上方或下方的該處理容積中。傳輸腔室耦合至該熱處理腔室，且基板傳輸設備安置在該傳輸腔室內。充氣壁，定義端口充氣部，且從該熱處理腔室延伸進該傳輸腔室，且沖洗設備耦合至該端口充氣部內的該等充氣壁。複數個裝載閘腔室耦合至該熱處理腔室對面的該傳輸腔室。
在又另一實施例中，提供了一種基板處理裝置。該基板處理裝置包括熱處理腔室，該熱處理腔室具有：可旋轉基板支架，該可旋轉基板支架被調整尺寸為在該可旋轉基板支架上支撐複數個基板；及熱源，該熱源安置在該可旋轉基板支架上方或下方。傳輸腔室，耦合至該熱處理腔室，且基板傳輸設備安置在該處理腔室內。充氣壁，定義端口充氣部，且從該熱處理腔室延伸進該傳輸腔室，且沖洗設備耦合至該端口充氣部內的該等充氣壁。第一裝載閘腔室耦合至該傳輸腔室，並且第二裝載閘腔室耦合至該傳輸腔室。該第一裝載閘腔室及該第二裝載閘腔室耦合至該熱處理腔室對面的該傳輸腔室，且該第一裝載閘腔室及該第二裝載閘腔室耦合至該傳輸腔室對面的工廠介面。
本文中所述的實施例係關於用於熱處理基板的裝置及方法。在一個實施例中，處理系統包括耦合至複數個裝載閘腔室的工廠介面。該複數個裝載閘腔室耦合至收容自動機的傳輸腔室。熱處理腔室耦合至傳輸腔室，且自動機被配置為在裝載閘腔室及熱處理腔室之間傳輸基板。多基板支架（其安置在熱處理腔室內）旋轉以促進高效的基板熱處理。安置在端口充氣部中的沖洗裝置提供處理腔室及傳輸腔室之間的環境隔離，同時允許在熱處理腔室及傳輸腔室之間進行高效的基板傳輸。
圖1繪示依據本文中所述之實施例之處理系統100的示意平面圖。處理系統100包括耦合至傳輸腔室104的熱處理腔室102。複數個裝載閘腔室（例如第一裝載閘腔室106及第二裝載閘腔室108）耦合至在熱處理腔室102對面的傳輸腔室。裝載閘腔室106、108可被調整尺寸為在任何給定時間點接納約5個及約25個之間的基板。裝載閘腔室106、108中的各者耦合至工廠介面110。
一或更多個盒112（其一般被配置為收容經處理及未處理的基板）可可移除地耦合至工廠介面110。處理系統110可被設計為減少處理系統100的整體覆蓋區以改良工廠佔地面積的高效使用。藉由利用多個裝載閘腔室，可增加效率，因為可不斷地在一個裝載閘腔室中取用未處理的基板，同時經處理的基板被維持在另一裝載閘腔室中，反之亦然。
熱處理腔室102被配置為針對各種應用（例如預或後處理操作、摻雜物結合等等）熱處理基板或將基板退火。熱處理腔室102被調整尺寸且配置為單次地熱處理複數個基板（亦即3或更多個、5或更多個等等），同時允許經處理及未處理基板的高效基板交換。傳輸腔室104（其收容自動機）可用以在裝載閘腔室106、108及熱處理腔室102之間傳輸經處理及未處理基板。在一個實施例中，可將熱處理腔室102、傳輸腔室104及裝載閘腔室106、108維持在實質類似的壓力（例如大氣或減少的壓力（亦即真空環境））下，以允許在處理系統100內進行高效的基板傳輸。
圖2A繪示依據本文中所述之實施例之圖1之處理系統100之一部分的示意橫截面圖。處理系統100包括經由端口215耦合至傳輸腔室104的熱處理腔室102。端口215被調整尺寸為促進由基板傳輸設備225（亦即自動機）將基板220傳遞過該端口。基板傳輸設備225包括一或更多個傳輸臂（亦即葉片），該等傳輸臂彼此協調運作以促進在處理系統100內進行高效的基板傳輸。在一個實施例中，基板傳輸設備具有五個臂。例如，基板傳輸設備225可包括第一臂及第二臂。在一個實施例中，第一臂用以供應基板或從處理容積208移除基板，而第二臂向或從裝載閘腔室106、108擷取或供應基板。亦可將額外的臂與第一及第二臂同步化，以促進處理容積208及裝載閘腔室106、108之間的基板傳輸。
熱處理腔室102定義處理容積208。氣體分佈設備204（亦即蓮蓬頭）安置在處理容積208內，且可耦合至熱處理腔室102的壁。一或更多個氣體分佈口207形成於氣體分佈設備204中，以允許將氣體傳遞過該等氣體分佈口。氣體分佈設備204亦可流體耦合至處理氣體源205。處理氣體源205被配置為經由氣體分佈設備204的氣體分佈口207向處理容積208供應一或更多個處理氣體。用於熱處理基板220的合適氣體包括在處理容積208內所維持的條件下實質上並不在基板220上進行沉積或蝕刻該基板的氣體。氣體的實例包括惰性氣體（亦即稀有氣體）或在熱處理條件下實質上是非反應性的其他氣體（亦即N2 、H2 等等）。真空泵240亦可與處理容積208流體連通，且可被配置為取決於所需的熱處理條件在其中產生各種程度的真空。
基板支架206亦安置在處理容積208內。基板支架206可以適用於熱處理的材料製造，例如陶瓷材料（例如碳化矽）或石墨材料。在一個實施例中，基板支架206形成自石墨且塗有碳化矽材料。基板支架材料可被選擇為在具有約200℃及約1100℃間之溫度的環境中有效地運作。一般而言，基板支架206安置在氣體分佈設備204對面。基板支架206可包括複數個井、環或用以在熱處理期間支撐基板220的其他基板支撐裝置。
升降銷230及升降馬達228亦可耦合至基板支架206以促進將基板220定位在基板支架206上及將該基板移開該基板支架。一般而言，升降銷230在與基板傳輸設備225接合以加載及卸載基板220時被致動到上升位置。升降銷230在基板220在熱處理期間由基板支架206支撐的情況下被安置在下降位置。
在一個實施例中，馬達203耦合至基板支架206。馬達203被配置為允許基板支架206旋轉移動。例如，基板支架206可以類似旋轉料架的方式旋轉。操作時，馬達203將基板支架206旋轉至第一位置以接收第一基板，將基板支架206旋轉至第二位置以接收第二基板等等，使得基板220在旋轉基板支架206期間被不斷地熱處理。
基板220的熱處理繼續直到由基板傳輸設備225移除基板220為止。設想的是，馬達203可與基板傳輸設備225同步化，以允許高效及精確地加載基板220及從基板支架206卸載該基板。例如，馬達203可被配置為暫停旋轉一段時間，以允許由基板傳輸設備225向及從基板支架206供應或移除基板220。在一個實施例中，安置在基板支架206上的基板220作出完全旋轉，使得在相同的位置下加載基板220及從處理容積208卸載該基板。
端口215（其安置在熱處理腔室102及傳輸腔室104之間）包括與端口215對準的開口235。氣體源218與定義端口充氣部240的開口235流體連通。端口充氣部240可進一步由充氣壁242所定義，該充氣壁從端口215附近的熱處理腔室102延伸。
圖2B繪示依據本文中所述之實施例之端口充氣部240的詳細示意橫截面圖。沖洗設備244耦合至充氣壁242，使得沖洗設備244延伸在端口充氣部240的內周緣附近。沖洗設備244包括定義沖洗氣體容積224的主體226。沖洗氣體容積224與氣體源218流體連通，且來自氣體源218的氣體經由形成於沖洗設備244之主體226中的複數個開口222被供應至端口充氣部240。
在熱處理腔室102的操作期間及在向或從傳輸腔室104傳輸基板期間，沖洗氣體流進端口充氣部240以產生「氣幕」，該氣幕防止或最小化來自處理容積208的處理氣體進入傳輸腔室104的情況。氣體源218可提供任何合適的沖洗氣體，例如氬、氦、氮或氫。在一個實施例中，處理氣體源205及氣體源218分別向處理容積208及端口充氣部240提供相同的氣體。在另一實施例中，處理氣體源205及氣體源218可分別向處理容積208及端口充氣部240提供不同的氣體。
藉由利用沖洗設備244，避免了利用狹縫閥門，且可達成更高效的基板傳輸。例如，消除了與開啟及關閉以供進行傳輸操作的狹縫閥門相關聯的時間。設想的是，取決於基板傳輸設備225的配置，可如每12秒一樣地快地或更快地傳輸基板。據此，若基板支架206包括5個基板位置，基板可能在從熱處理腔室102移除之前花費約60秒在熱處理。設想的是，若需要較大量的熱處理時間，則可採用基板傳輸上的延遲以增加基板在熱處理腔室102中的滯留時間。一般而言，設想的是，可以等於或大於基板傳輸設備交換時間乘以基板支架206上之基板位置數量的一定量時間來熱處理基板。
圖3繪示依據本文中所述之實施例之熱處理腔室102的示意橫截面圖。在所繪示的實施例中，加熱器302安置在基板支架206下方的處理容積208內。換言之，加熱器302可定位在端口215下方，該端口實質上與基板支架206上在熱處理期間由基板佔據的位置共面。加熱器302可為電阻式加熱器、石墨加熱器或其他類型的電加熱器。加熱器302可為環形的（如所繪示）或被配置為向被熱處理的基板提供實質均勻的加熱輪廓的另一合適形狀。加熱器302可被配置為將處理容積208中的溫度維持在約200℃及約1100℃之間。支撐基板之基板支架206的厚度可被選擇為使得基板支架206的熱質量允許實質恆定地加熱安置在基板支架206上的基板。例如，基板支架206的熱質量可促進跨基板支架206的直徑維持實質恆溫。
替代的加熱源（例如燈等等）亦可用以加熱基板支架206及處理容積208。與加熱器302類似，替代的加熱源可安置在基板支架206下方。在利用燈的實施例中，透光材料可安置在燈及基板支架206之間。例如，石英窗可安置在燈及基板支架206之間。
圖4繪示依據本文中所述之實施例之熱處理腔室102的示意橫截面圖。在所繪示的實施例中，加熱器402安置在基板支架206上方的處理容積208內。換言之，加熱器402可定位在端口215上方，該端口實質上與基板支架206上在熱處理期間由基板佔據的位置共面。與加熱器302類似，加熱器402可為電阻式加熱器、石墨加熱器或其他類型的電加熱器。加熱器402可為環形的（如所繪示）或被配置為向被熱處理的基板提供實質均勻的加熱輪廓的另一合適形狀。加熱器402可被配置為將處理容積208中的溫度維持在約200℃及約1100℃之間。支撐基板之基板支架206的厚度可被選擇為使得基板支架206的熱質量允許實質恆定地加熱安置在基板支架206上的基板。
替代的加熱源（例如燈等等）亦可用以加熱基板支架206及處理容積208。與加熱器402類似，替代的加熱源可安置在基板支架206上方。在利用燈的實施例中，透光材料可安置在燈及基板支架206之間。例如，石英窗可安置在燈及基板支架206之間。
圖5繪示依據本文中所述之實施例之基板支架206的示意平面圖。如先前所述，基板支架206被配置為在熱處理期間支撐複數個基板220。儘管所繪示的實施例描繪針對五個基板而配置的基板支架206，設想的是可由基板支架206支撐更大或更少數量的基板。在一個實施例中，基板支架206被配置為支撐複數個300 mm直徑的基板。亦可由被調整尺寸為接納300 mm基板以外之基板尺寸的基板支架來支撐其他基板直徑（例如200 mm或450 mm）。
總而言之，提供了熱批式處理腔室，其利用可旋轉的基板支架以供處理複數個基板。與傳輸腔室中的基板傳輸裝置結合的多個裝載閘腔室允許了高處理量的熱處理，該熱處理能夠經濟地處理大量基板同時維持通常與單一基板處理腔室相關聯的優點。例如，在利用本文中所述之實施例的情況下，可更快地改變及/或維持熱處理腔室的溫度，同時亦實現較高處理量的優點。
儘管以上所述是針對本揭示案的實施例，但是可自行設計本揭示案之其他的及進一步的實施例而不脫離本揭示案的基本範疇，且本揭示案的範疇是由隨後的請求項所決定的。
100‧‧‧處理系統102‧‧‧熱處理腔室104‧‧‧腔室106‧‧‧第一裝載閘腔室108‧‧‧第二裝載閘腔室110‧‧‧工廠介面112‧‧‧盒203‧‧‧馬達204‧‧‧氣體分佈設備205‧‧‧處理氣體源206‧‧‧基板支架207‧‧‧氣體分佈口208‧‧‧處理容積215‧‧‧端口218‧‧‧氣體源220‧‧‧基板222‧‧‧開口224‧‧‧沖洗氣體容積225‧‧‧設備226‧‧‧主體228‧‧‧升降馬達230‧‧‧升降銷235‧‧‧開口240‧‧‧端口充氣部242‧‧‧充氣壁244‧‧‧沖洗設備302‧‧‧加熱器402‧‧‧加熱器
可藉由參照實施例（其中之某些係繪示於隨附的繪圖中）來擁有本揭示案的更特定描述，使得可使用詳細的方式來了解（以上所簡要概述的）以上所載之本揭示案特徵。然而，要注意的是，隨附的繪圖僅繪示示例性實施例且因此並被不視為其範疇的限制，可容許其他等效的實施例。
圖1繪示依據本文中所述之實施例之處理系統的示意平面圖。
圖2A繪示依據本文中所述之實施例之圖1之處理系統之一部分的示意橫截面圖。
圖2B繪示依據本文中所述之實施例之端口充氣部的示意橫截面詳細圖。
圖3繪示依據本文中所述之實施例之熱處理腔室的示意橫截面圖。
圖4繪示依據本文中所述之實施例之熱處理腔室的示意橫截面圖。
圖5繪示依據本文中所述之實施例之基板支架的示意平面圖。
為了促進了解，已使用了相同參考標號（於可能處）以指定普遍用於該等圖式的相同元件。設想的是，可在不進一步重述的情況下有益地將一個實施例的元件及特徵併入其他實施例。
國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無
國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無
(請換頁單獨記載) 無
100‧‧‧處理系統
102‧‧‧熱處理腔室
104‧‧‧腔室
203‧‧‧馬達
204‧‧‧氣體分佈設備
205‧‧‧處理氣體源
206‧‧‧基板支架
207‧‧‧氣體分佈口
208‧‧‧處理容積
215‧‧‧端口
218‧‧‧氣體源
220‧‧‧基板
225‧‧‧設備
228‧‧‧升降馬達
230‧‧‧升降銷
235‧‧‧開口
240‧‧‧端口充氣部
242‧‧‧充氣壁

Claims (20)

  1. 一種基板處理裝置，包括： 一熱處理腔室，包括： 一可旋轉基板支架，被調整尺寸為在其上支撐複數個基板；及 一熱源，安置在該可旋轉基板支架上方或下方； 一傳輸腔室，耦合至該熱處理腔室，其中一基板傳輸設備安置在該傳輸腔室內； 充氣壁，定義一端口充氣部且從該熱處理腔室延伸進該傳輸腔室，其中一沖洗設備耦合至該端口充氣部內的該等充氣壁； 一第一裝載閘腔室，耦合至該傳輸腔室；及 一第二裝載閘腔室，耦合至該傳輸腔室，其中該第一裝載閘腔室及該第二裝載閘腔室耦合至該熱處理腔室對面的該傳輸腔室。
  2. 如請求項1所述之裝置，其中該可旋轉基板支架被調整尺寸為接納五個300 mm的基板。
  3. 如請求項1所述之裝置，其中該可旋轉基板支架形成自塗有碳化矽的石墨。
  4. 如請求項1所述之裝置，其中該熱源為一電阻式加熱器。
  5. 如請求項4所述之裝置，其中該電阻式加熱器是環形的。
  6. 如請求項1所述之裝置，其中該熱源為一石墨加熱器。
  7. 如請求項1所述之裝置，其中該沖洗設備延伸在該端口充氣部的一內周緣附近。
  8. 如請求項1所述之裝置，其中該沖洗設備具有一主體，該主體在該主體中定義一容積。
  9. 如請求項8所述之裝置，其中複數個開口形成於該沖洗設備的該主體中，以將該容積與該端口充氣部流體耦合。
  10. 如請求項9所述之裝置，其中該容積流體耦合至一沖洗氣體源。
  11. 如請求項1所述之裝置，其中該第一裝載閘腔室及該第二裝載閘腔室各被調整尺寸為接納5及25個之間的基板。
  12. 一種基板處理裝置，包括： 一熱處理腔室，包括： 一主體，定義一處理容積； 一氣體分佈設備，安置在該處理容積內； 一可旋轉基板支架，安置在該氣體分佈設備對面的該處理容積內，該可旋轉基板支架被調整尺寸為在該可旋轉基板支架上支撐複數個基板；及 一熱源，安置在該可旋轉基板支架上方或下方的該處理容積中； 一傳輸腔室，耦合至該熱處理腔室，其中一基板傳輸設備安置在該傳輸腔室內； 充氣壁，定義從該熱處理腔室延伸進該傳輸腔室的一端口充氣部，其中一沖洗設備耦合至該端口充氣部內的該等充氣壁；及 複數個裝載閘腔室，耦合至該熱處理腔室對面的該傳輸腔室。
  13. 如請求項12所述之裝置，更包括： 一處理氣體源，經由該氣體分佈設備耦合至該熱處理腔室且與該處理容積流體連通。
  14. 如請求項13所述之裝置，其中該處理氣體源向該處理容積供應一惰性氣體。
  15. 如請求項13所述之裝置，更包括： 一沖洗氣體源，與該端口充氣部流體連通。
  16. 如請求項15所述之裝置，其中該處理氣體源及該沖洗氣體源分別向該處理容積及該端口充氣部供應相同的氣體。
  17. 如請求項16所述之裝置，其中該沖洗設備具有一主體，該主體在該主體中定義一容積，且該沖洗氣體源與該容積流體連通。
  18. 如請求項17所述之裝置，其中該容積透過形成於該沖洗氣體設備的該主體中的開口與該端口充氣部流體連通。
  19. 如請求項18所述之裝置，其中該沖洗氣體設備延伸在該端口充氣部的一內周緣附近。
  20. 一種基板處理裝置，包括： 一熱處理腔室，包括： 一可旋轉基板支架，被調整尺寸為在其上支撐複數個基板；及 一熱源，安置在該可旋轉基板支架上方或下方； 一傳輸腔室，耦合至該熱處理腔室，其中一基板傳輸設備安置在該傳輸腔室內； 充氣壁，定義一端口充氣部且從該熱處理腔室延伸進該傳輸腔室，其中一沖洗設備耦合至該端口充氣部內的該等充氣壁； 一第一裝載閘腔室，耦合至該傳輸腔室； 一第二裝載閘腔室，耦合至該傳輸腔室，其中該第一裝載閘腔室及該第二裝載閘腔室耦合至該熱處理腔室對面的該傳輸腔室；及 一工廠介面，其中該第一裝載閘腔室及該第二裝載閘腔室耦合至該傳輸腔室對面的該工廠介面。
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