TWI711577B - ｎ型導電材料及該製造方法 - Google Patents

ｎ型導電材料及該製造方法 Download PDF

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Publication number
TWI711577B
TWI711577B TW107104468A TW107104468A TWI711577B TW I711577 B TWI711577 B TW I711577B TW 107104468 A TW107104468 A TW 107104468A TW 107104468 A TW107104468 A TW 107104468A TW I711577 B TWI711577 B TW I711577B
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Taiwan
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conductive material
type conductive
type
carbon nanotube
metal complex
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TW107104468A
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Chinese (zh)
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TW201840464A (zh
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野野口斐之
河合壯
飯原友
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國立大學法人奈良先端科學技術大學院大學
日商拓自達電線股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
TW107104468A 2017-02-10 2018-02-08 ｎ型導電材料及該製造方法 TWI711577B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-023628 2017-02-10
JP2017023628 2017-02-10

Publications (2)

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TW201840464A TW201840464A (zh) 2018-11-16
TWI711577B true TWI711577B (zh) 2020-12-01

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TW107104468A TWI711577B (zh) 2017-02-10 2018-02-08 ｎ型導電材料及該製造方法

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JP (1) JP7036347B2 (ja)
KR (1) KR20190123284A (ja)
CN (1) CN110268535A (ja)
TW (1) TWI711577B (ja)
WO (1) WO2018147126A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7400442B2 (ja) * 2019-12-23 2023-12-19 東洋インキＳｃホールディングス株式会社 熱電変換材料および熱電変換素子
CN111253759B (zh) * 2020-03-27 2022-02-22 西安交通大学 一种基于金属有机框架与碳纳米管的复合材料的制备方法及器件的制备方法
CN115552647A (zh) * 2020-05-21 2022-12-30 电化株式会社 热电转换用n型材料及其制造方法、掺杂剂以及热电转换元件
US11746017B2 (en) 2020-07-31 2023-09-05 Denso Corporation Carbon nanotube aggregate
WO2023162480A1 (ja) * 2022-02-25 2023-08-31 デンカ株式会社 熱電変換用ｎ型材料及びその製造方法、ドーパント並びに熱電変換素子

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007070155A (ja) * 2005-09-06 2007-03-22 Institute Of Physical & Chemical Research 内包体、内包体の製造方法および製造装置
WO2015198980A1 (ja) * 2014-06-26 2015-12-30 国立大学法人奈良先端科学技術大学院大学 ナノ材料－ドーパント組成物複合体の製造方法、ナノ材料－ドーパント組成物複合体およびドーパント組成物

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JP2002097010A (ja) * 2000-09-20 2002-04-02 Japan Science & Technology Corp ハイブリッド単層カーボンナノチューブの作製方法
JP2003017508A (ja) * 2001-07-05 2003-01-17 Nec Corp 電界効果トランジスタ
US8093580B2 (en) 2006-11-22 2012-01-10 Nec Corporation Semiconductor device and method of manufacturing the same
JP5334151B2 (ja) * 2007-09-20 2013-11-06 日本電気株式会社 電界放出発光素子
JP2010192245A (ja) 2009-02-18 2010-09-02 Nec Corp エミッタの製造方法、エミッタ、電界放出発光素子の製造方法、電界放出発光素子及び照明装置
WO2013047730A1 (ja) 2011-09-28 2013-04-04 富士フイルム株式会社 熱電変換材料及び熱電変換素子
JP5789580B2 (ja) 2011-10-31 2015-10-07 富士フイルム株式会社 熱電変換材料及び熱電変換素子
JP2013098299A (ja) * 2011-10-31 2013-05-20 Fujifilm Corp 熱電変換材料及び熱電変換素子
JP5951539B2 (ja) * 2013-03-26 2016-07-13 富士フイルム株式会社 熱電変換材料、熱電変換素子ならびにこれを用いた熱電発電用物品およびセンサー用電源
JP5984748B2 (ja) * 2013-07-01 2016-09-06 富士フイルム株式会社 熱電変換素子および熱電変換モジュール
JP6047468B2 (ja) * 2013-09-04 2016-12-21 富士フイルム株式会社 熱電変換材料、熱電変換素子、熱電発電用物品およびセンサー用電源
JP6704577B2 (ja) * 2015-02-23 2020-06-03 国立大学法人 奈良先端科学技術大学院大学 カーボンナノチューブ−ドーパント組成物複合体の製造方法およびカーボンナノチューブ−ドーパント組成物複合体
JP2016171322A (ja) * 2015-03-09 2016-09-23 日本ゼオン株式会社 熱電変換素子用組成物、熱電変換素子用成形体、熱電変換素子、熱電変換モジュール、熱電変換素子用組成物の製造方法、および熱電変換素子用成形体の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007070155A (ja) * 2005-09-06 2007-03-22 Institute Of Physical & Chemical Research 内包体、内包体の製造方法および製造装置
WO2015198980A1 (ja) * 2014-06-26 2015-12-30 国立大学法人奈良先端科学技術大学院大学 ナノ材料－ドーパント組成物複合体の製造方法、ナノ材料－ドーパント組成物複合体およびドーパント組成物

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Publication number Publication date
WO2018147126A1 (ja) 2018-08-16
JPWO2018147126A1 (ja) 2019-12-12
TW201840464A (zh) 2018-11-16
JP7036347B2 (ja) 2022-03-15
CN110268535A (zh) 2019-09-20
KR20190123284A (ko) 2019-10-31

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