KR20190123284A - n형 도전 재료 및 그의 제조 방법 - Google Patents

n형 도전 재료 및 그의 제조 방법 Download PDF

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Publication number
KR20190123284A
KR20190123284A KR1020197026641A KR20197026641A KR20190123284A KR 20190123284 A KR20190123284 A KR 20190123284A KR 1020197026641 A KR1020197026641 A KR 1020197026641A KR 20197026641 A KR20197026641 A KR 20197026641A KR 20190123284 A KR20190123284 A KR 20190123284A
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South Korea
Prior art keywords
conductive material
type
carbon nanotubes
metal complex
type conductive
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KR1020197026641A
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English (en)
Korean (ko)
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요시유키 노노구치
쓰요시 가와이
유 이이하라
Original Assignee
고쿠리츠다이가쿠호징 나라 센탄카가쿠기쥬츠 다이가쿠인 다이가쿠
타츠타 전선 주식회사
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Application filed by 고쿠리츠다이가쿠호징 나라 센탄카가쿠기쥬츠 다이가쿠인 다이가쿠, 타츠타 전선 주식회사 filed Critical 고쿠리츠다이가쿠호징 나라 센탄카가쿠기쥬츠 다이가쿠인 다이가쿠
Publication of KR20190123284A publication Critical patent/KR20190123284A/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • H01L35/22—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L35/34—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Carbon And Carbon Compounds (AREA)
KR1020197026641A 2017-02-10 2018-01-30 n형 도전 재료 및 그의 제조 방법 KR20190123284A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017023628 2017-02-10
JPJP-P-2017-023628 2017-02-10
PCT/JP2018/002877 WO2018147126A1 (ja) 2017-02-10 2018-01-30 ｎ型導電材料およびその製造方法

Publications (1)

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KR20190123284A true KR20190123284A (ko) 2019-10-31

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KR1020197026641A KR20190123284A (ko) 2017-02-10 2018-01-30 n형 도전 재료 및 그의 제조 방법

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Country Link
JP (1) JP7036347B2 (ja)
KR (1) KR20190123284A (ja)
CN (1) CN110268535A (ja)
TW (1) TWI711577B (ja)
WO (1) WO2018147126A1 (ja)

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Publication number Priority date Publication date Assignee Title
JP7400442B2 (ja) * 2019-12-23 2023-12-19 東洋インキＳｃホールディングス株式会社 熱電変換材料および熱電変換素子
CN111253759B (zh) * 2020-03-27 2022-02-22 西安交通大学 一种基于金属有机框架与碳纳米管的复合材料的制备方法及器件的制备方法
US20230200242A1 (en) * 2020-05-21 2023-06-22 Denka Company Limited N-type material for thermoelectric conversion, method for producing same, dopant and thermoelectric conversion element
US11746017B2 (en) 2020-07-31 2023-09-05 Denso Corporation Carbon nanotube aggregate
WO2023162480A1 (ja) * 2022-02-25 2023-08-31 デンカ株式会社 熱電変換用ｎ型材料及びその製造方法、ドーパント並びに熱電変換素子

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013047730A1 (ja) 2011-09-28 2013-04-04 富士フイルム株式会社 熱電変換材料及び熱電変換素子
WO2013065631A1 (ja) 2011-10-31 2013-05-10 富士フイルム株式会社 熱電変換材料及び熱電変換素子
WO2015198980A1 (ja) 2014-06-26 2015-12-30 国立大学法人奈良先端科学技術大学院大学 ナノ材料－ドーパント組成物複合体の製造方法、ナノ材料－ドーパント組成物複合体およびドーパント組成物

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JP2002097010A (ja) * 2000-09-20 2002-04-02 Japan Science & Technology Corp ハイブリッド単層カーボンナノチューブの作製方法
JP2003017508A (ja) * 2001-07-05 2003-01-17 Nec Corp 電界効果トランジスタ
JP2007070155A (ja) * 2005-09-06 2007-03-22 Institute Of Physical & Chemical Research 内包体、内包体の製造方法および製造装置
JP5326093B2 (ja) 2006-11-22 2013-10-30 日本電気株式会社 半導体装置及びその製造方法
JP5334151B2 (ja) * 2007-09-20 2013-11-06 日本電気株式会社 電界放出発光素子
JP2010192245A (ja) * 2009-02-18 2010-09-02 Nec Corp エミッタの製造方法、エミッタ、電界放出発光素子の製造方法、電界放出発光素子及び照明装置
JP2013098299A (ja) * 2011-10-31 2013-05-20 Fujifilm Corp 熱電変換材料及び熱電変換素子
JP5951539B2 (ja) * 2013-03-26 2016-07-13 富士フイルム株式会社 熱電変換材料、熱電変換素子ならびにこれを用いた熱電発電用物品およびセンサー用電源
JP5984748B2 (ja) * 2013-07-01 2016-09-06 富士フイルム株式会社 熱電変換素子および熱電変換モジュール
JP6047468B2 (ja) * 2013-09-04 2016-12-21 富士フイルム株式会社 熱電変換材料、熱電変換素子、熱電発電用物品およびセンサー用電源
JP6704577B2 (ja) * 2015-02-23 2020-06-03 国立大学法人 奈良先端科学技術大学院大学 カーボンナノチューブ−ドーパント組成物複合体の製造方法およびカーボンナノチューブ−ドーパント組成物複合体
JP2016171322A (ja) * 2015-03-09 2016-09-23 日本ゼオン株式会社 熱電変換素子用組成物、熱電変換素子用成形体、熱電変換素子、熱電変換モジュール、熱電変換素子用組成物の製造方法、および熱電変換素子用成形体の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013047730A1 (ja) 2011-09-28 2013-04-04 富士フイルム株式会社 熱電変換材料及び熱電変換素子
WO2013065631A1 (ja) 2011-10-31 2013-05-10 富士フイルム株式会社 熱電変換材料及び熱電変換素子
WO2015198980A1 (ja) 2014-06-26 2015-12-30 国立大学法人奈良先端科学技術大学院大学 ナノ材料－ドーパント組成物複合体の製造方法、ナノ材料－ドーパント組成物複合体およびドーパント組成物

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T. Park et. al., Energy Environ. Sci.6, 788-792, 2013

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JPWO2018147126A1 (ja) 2019-12-12
TW201840464A (zh) 2018-11-16
TWI711577B (zh) 2020-12-01
JP7036347B2 (ja) 2022-03-15
WO2018147126A1 (ja) 2018-08-16
CN110268535A (zh) 2019-09-20

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