TWI711489B - 基板處理裝置及基板處理方法 - Google Patents

基板處理裝置及基板處理方法 Download PDF

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Publication number
TWI711489B
TWI711489B TW108103870A TW108103870A TWI711489B TW I711489 B TWI711489 B TW I711489B TW 108103870 A TW108103870 A TW 108103870A TW 108103870 A TW108103870 A TW 108103870A TW I711489 B TWI711489 B TW I711489B
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TW
Taiwan
Prior art keywords
power generation
substrate processing
unit
heating
power
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TW108103870A
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English (en)
Chinese (zh)
Other versions
TW201945082A (zh
Inventor
橋詰彰夫
園田敦
Original Assignee
日商斯庫林集團股份有限公司
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Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW201945082A publication Critical patent/TW201945082A/zh
Application granted granted Critical
Publication of TWI711489B publication Critical patent/TWI711489B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW108103870A 2018-02-28 2019-01-31 基板處理裝置及基板處理方法 TWI711489B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018034560A JP7060206B2 (ja) 2018-02-28 2018-02-28 基板処理装置および基板処理方法
JP2018-034560 2018-02-28

Publications (2)

Publication Number Publication Date
TW201945082A TW201945082A (zh) 2019-12-01
TWI711489B true TWI711489B (zh) 2020-12-01

Family

ID=67805221

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108103870A TWI711489B (zh) 2018-02-28 2019-01-31 基板處理裝置及基板處理方法

Country Status (3)

Country Link
JP (1) JP7060206B2 (ja)
TW (1) TWI711489B (ja)
WO (1) WO2019167516A1 (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3160926U (ja) * 2010-03-30 2010-07-15 東京エレクトロン株式会社 熱処理装置
WO2013002026A1 (ja) * 2011-06-27 2013-01-03 コニカミノルタホールディングス株式会社 ガスバリア性フィルム、ガスバリア性フィルムの製造方法、および電子デバイス
JP2014178071A (ja) * 2013-03-15 2014-09-25 Tokyo Electron Ltd 熱処理装置の異常検知装置、熱処理装置及び熱処理装置の異常検知方法、並びに、異常検知方法のプログラム
WO2016125240A1 (ja) * 2015-02-02 2016-08-11 日産自動車株式会社 触媒層修正方法、及び触媒層修正装置
WO2017110953A1 (ja) * 2015-12-24 2017-06-29 株式会社Flosfia 成膜方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07183307A (ja) * 1993-12-21 1995-07-21 Kokusai Electric Co Ltd 半導体製造装置
JP2000068183A (ja) 1998-08-19 2000-03-03 Dainippon Screen Mfg Co Ltd 基板加熱処理装置ならびに基板加熱処理装置の熱エネルギー変換方法および熱エネルギー回収方法
TWI534341B (zh) 2011-09-26 2016-05-21 Hitachi Int Electric Inc A substrate processing apparatus, a manufacturing method of a semiconductor device, and a recording medium

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3160926U (ja) * 2010-03-30 2010-07-15 東京エレクトロン株式会社 熱処理装置
WO2013002026A1 (ja) * 2011-06-27 2013-01-03 コニカミノルタホールディングス株式会社 ガスバリア性フィルム、ガスバリア性フィルムの製造方法、および電子デバイス
JP2014178071A (ja) * 2013-03-15 2014-09-25 Tokyo Electron Ltd 熱処理装置の異常検知装置、熱処理装置及び熱処理装置の異常検知方法、並びに、異常検知方法のプログラム
WO2016125240A1 (ja) * 2015-02-02 2016-08-11 日産自動車株式会社 触媒層修正方法、及び触媒層修正装置
WO2017110953A1 (ja) * 2015-12-24 2017-06-29 株式会社Flosfia 成膜方法

Also Published As

Publication number Publication date
TW201945082A (zh) 2019-12-01
JP7060206B2 (ja) 2022-04-26
WO2019167516A1 (ja) 2019-09-06
JP2019149509A (ja) 2019-09-05

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