TWI711489B - Substrate processing device and substrate processing method - Google Patents

Abstract

A substrate processing device that uses a predetermined processing liquid to perform predetermined processing on a substrate; wherein it has: a supply means that supplies light or heat used in the predetermined processing; a frame body that contains and supplies means; and suppression Means, which suppress the leakage of light or heat toward the outside of the frame; The suppression means is provided with a power generation means based on at least one of the light and heat received from the supply means to generate power.

Description

Substrate processing device and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method that discharge a processing liquid to a substrate such as a semiconductor wafer to perform etching processing or cleaning processing.

In recent years, energy conservation in factories has been required. For example, Patent Document 1 proposes a technique for reducing the amount of processing liquid used in substrate processing. For example, Patent Document 2 discloses a substrate processing device that converts thermal energy from a heating plate that heats a substrate into electrical energy, and uses the converted electrical energy to drive various parts of the device.

[Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2016-162923

[Patent Document 2] Japanese Patent Laid-Open No. 2000-068183

The substrate processing device is installed in a temperature-controlled factory (for example, a clean room adjusted to 25 degrees Celsius). The substrate processing apparatus discharges a processing liquid heated to a temperature suitable for processing by a heating means, or immerses the substrate in the heated processing liquid, and performs etching or cleaning processing on the substrate. In addition, in the process of removing the resist film from the substrate, there are cases in which the process includes heating the substrate by heating means.

After the life time of the treatment liquid, the treatment liquid will be discharged from the treatment tank (wasted liquid). The so-called life time of the treatment liquid refers to the use time during which the treatment liquid is judged to be unable to fully perform the treatment itself if the state of the treatment liquid continues to change if the treatment liquid is continuously used, and is determined in advance by experiments.

If the heat from the heating means is discharged to the outside of the substrate processing device, the environment in the factory will change, and there is a possibility of affecting the processing quality of the substrate. Therefore, covering the inside of the substrate processing apparatus with a heat insulating material or the like can prevent heat from being discharged outside the substrate processing apparatus. When the heating means is a light emitting device such as a halogen lamp, because the light leaks from the substrate processing device, there is also a situation that changes the environment in the factory, so the light will not be emitted from the substrate processing device A light-shielding member is provided in the way of leakage.

However, the part of the energy emitted by the heating means that is not used for heating the processing liquid or substrate is only shielded by the heat insulating material or shading member, and the energy not used for heating the processing liquid or substrate is not effective Use it wisely.

Therefore, one aspect of the technology of the present invention is to use energy more effectively in a substrate processing apparatus.

One aspect of the technology of the present invention is exemplified by the following substrate processing apparatus. This substrate processing device is a substrate processing device that uses a predetermined processing liquid to perform predetermined processing on a substrate. The substrate processing apparatus is equipped with: supply means, which supply light or heat used in a predetermined process; a frame, which contains and supply means; and suppression means, which suppress light or heat from leaking out of the frame; the suppression means is provided with A means of generating electricity based on at least one of light and heat received from the supply means.

In the technology of the present invention, since the leakage of light or heat used in a predetermined process to the outside of the frame is suppressed by the suppression means, the external environment of the substrate processing apparatus caused by the leakage of light or heat to the outside of the frame can be suppressed The change. A power generation means is provided in the suppression means, and the power generation means generates power based on the light or heat supplied by the supply means. Therefore, the light or heat supplied by the supply means can be used more effectively.

In the technology of the present invention, the supply means may also include a heating means for heating the treatment liquid, and the suppression means may also include a blocking member for suppressing the leakage of light or heat supplied by the heating means to the outside of the frame. According to such a technique, even if the treatment liquid is heated, the heat or light used for heating can be prevented from leaking out of the housing.

In the technology of the present invention, a detection means for detecting the presence or absence of power generation or the amount of power generation performed by the power generation means may be further provided. According to such a technology, it is possible to monitor the amount of power generated by the power generation means.

In the technology of the present invention, it is also possible to further have a judging means for judging whether an abnormality has occurred in the supply means based on the detection result detected by the detecting means. The amount of power generated by the power generation means depends on the amount of light or heat supplied by the supply means. Therefore, by monitoring the amount of power generation, it can be determined whether an abnormality has occurred in the supply means.

In the technology of the present invention, it is also possible to further include a control unit that controls the supply means based on the judgment result determined by the judgment means. As described above, the amount of power generated by the power generation means depends on the amount of light or heat supplied by the supply means. Therefore, it is possible to determine whether the amount of light or heat supplied by the supply means is appropriate by detecting the amount of power generation. When the control unit determines that the amount of light or heat supplied by the supply means is inappropriate, it can control the supply means in such a way that the amount of light or heat becomes appropriate.

In the technology of the present invention, it may be further provided with: notification means, which notifies the judgment result determined by the judgment means; and input means, which accepts the input of the control instruction from the user to control the supply means; the control part When it is determined by the judging means that an abnormality has occurred in the supply means, the notification means is made to execute the abnormal notification, and after the abnormality notification, the supply means is controlled in accordance with the control command accepted by the input means. The notification means is, for example, a buzzer, a warning light, etc. that notify a user who uses the substrate processing apparatus of the determination result. When it is determined that an abnormality has occurred in the supply means, the control unit causes the notification means to perform an abnormality notification, and therefore can notify the user of the abnormality of the substrate processing apparatus. The user notified of the determination result by the notification means inputs a control command to control the supply means via the input means through the input means. The control unit controls the supply means in accordance with the control command. According to such a technology, when it is determined that the supply means is not operating normally, the supply means can be controlled according to instructions from the user.

In the technology of the present invention, the supply means can also supply at least light, the suppression means suppress the leakage of light to the outside of the frame, and the power generation means includes a photovoltaic power generation unit that receives light to generate power. According to such a technology, the photovoltaic power generation unit can generate electricity by the light supplied by the supply means.

In the technology of the present invention, the supply means further supplies heat, and the power generation means further includes a thermal power generation unit that receives heat to generate power, and the photovoltaic power generation unit is arranged on the side of the thermal power generation unit more than the supply means. According to such a technology, electricity can be generated based on both the light and heat supplied by the supply means. In addition, by arranging the photovoltaic power generation unit on the side of the supply means than the thermal power generation unit, it is possible to prevent the light supplied by the supply means from being blocked by the thermal power generation unit to reduce the power generation of the photovoltaic power generation unit. The power generated by the power generation means can also be used to drive the substrate processing device. In addition, it may be further provided with a power storage unit that stores electric power generated by the power generation means.

The technology of the present invention can also be grasped from the aspect of the substrate processing method.

The technology of the present invention can utilize energy more effectively in a substrate processing apparatus.

10‧‧‧Temperature adjustment control unit

11.11a‧‧‧Heating unit

12, 12a‧‧‧cooling unit

20‧‧‧Substrate Processing Unit

21, 21a‧‧‧Heating treatment section (heating treatment unit)

22‧‧‧Platform

23‧‧‧Infrared light

24‧‧‧Discharge nozzle

25, 123, 123a, 1183‧‧‧ thermal power generation device

30‧‧‧Power storage unit

50‧‧‧Generator

55‧‧‧Control Department

57‧‧‧Storage Department

61, 62, 117‧‧‧ Waste liquid piping

72, 125, 253, 1186‧‧‧ Transmission wire

81, 115‧‧‧Supply piping

82、116‧‧‧Return piping

100‧‧‧Substrate processing equipment

101‧‧‧Keyboard

102‧‧‧Buzzer

103‧‧‧Warning light

110, 120, 210‧‧‧Frame

111, 1202‧‧‧ slot

112, 121‧‧‧Internal piping

113‧‧‧Heating section

114‧‧‧Thermometer

118‧‧‧Power Generation Department

119, 129, 257‧‧‧Power Storage Department

122, 122a‧‧‧cooling part

124、252、1185‧‧‧Electricity meter

126、254、1187‧‧‧Combined transmission wire

127, 255, 1188‧‧‧Branch transmission line

128, 256, 1189‧‧‧Branch

200‧‧‧Factory waste piping

211, 1201, 2101‧‧‧Insulation material

251, 1184, 1231, 1231a‧‧‧Heating surface

551‧‧‧CPU

552‧‧‧ROM

553‧‧‧RAM

554‧‧‧disk

1101‧‧‧Interrupting member

1121‧‧‧The first connecting part

1122‧‧‧Second connecting part

1131‧‧‧Halogen lamp

1132‧‧‧Ejection surface

1181‧‧‧Photovoltaic power generation device

1182‧‧‧Light receiving surface

1203‧‧‧Outer wall

1221‧‧‧Cooling Noodle

F‧‧‧Floor

P‧‧‧ program

W‧‧‧Substrate

FIG. 1 is a diagram showing an example of the structure of the substrate processing apparatus of the embodiment.

Figure 2 is an example of a functional block diagram of the substrate processing apparatus.

Fig. 3 is a diagram illustrating the outline of the internal structure of the heating unit.

Fig. 4 is a diagram showing an example of the structure near the heating part of the heating unit.

Fig. 5 is a diagram showing an example of the internal structure of the cooling unit of the temperature adjustment control unit.

FIG. 6 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus.

Fig. 7 is a diagram showing an example of the heating unit of the first modification.

Fig. 8 is a diagram showing an example of a cooling unit in a second modification.

Fig. 9 is a diagram showing an example of a heat treatment section of the substrate treatment unit of the second embodiment.

Fig. 10 is a diagram showing an example of the configuration of a fifth modification in which an electric storage unit is provided outside the temperature adjustment control unit and the substrate processing unit.

Fig. 11 is a diagram showing an example of a heat treatment part of a sixth modification.

Hereinafter, a substrate processing apparatus and a substrate processing method using the substrate processing apparatus according to an embodiment will be described with reference to the drawings. The configuration of the embodiment shown below is only an example, and the technology of the present invention is not limited to the configuration of the embodiment.

<First Embodiment>

FIG. 1 is a diagram showing an example of the structure of a substrate processing apparatus 100 of the embodiment. The substrate processing apparatus 100 uses a processing solution containing more than one chemical solution and pure water to perform etching processing or cleaning processing (hereinafter also referred to as "processing") on a substrate. The treatment liquid may also be, for example, a mixed acid aqueous solution containing at least one of phosphoric acid, nitric acid, and acetic acid and pure water, an aqueous hydrogen fluoride solution, pure water, or isopropyl alcohol (IPA; isopropyl alcohol). The substrate processing apparatus 100 includes a temperature adjustment control unit 10 and a substrate processing unit 20. The temperature adjustment control unit 10 and the substrate processing unit 20 are installed on the floor of the floor F of the factory, and the waste liquid pipes 61 and 62 are installed under the floor of the floor F. The substrate processing apparatus 100 is also provided with a keyboard 101 for receiving input from an operator, a buzzer 102 for notifying an abnormality of the machine, etc., and a warning light 103. Hereinafter, referring to FIG. 1, the substrate processing apparatus 100 will be described. The processing is an example of the "predetermined processing".

The temperature adjustment control unit 10 performs heating and cooling of the processing liquid used in the processing of the substrate. The temperature adjustment control unit 10 adjusts the temperature of the processing liquid to a temperature suitable for processing, and supplies the adjusted processing liquid to the substrate processing unit 20 through the supply pipe 115. The treatment liquid is, for example, sulfuric acid (H ₂ SO ₄ ), SPM (Sulfuric Acid-Hydrogen Peroxide Mixture; a mixture of sulfuric acid and hydrogen peroxide), phosphoric acid (H ₃ PO ₄ ) aqueous solution, SC1 (Standard Clean 1) 1); mixed aqueous solution of ammonia and hydrogen peroxide), SC2 (Standard Clean 2; mixed aqueous solution of ammonia and hydrochloric acid), hydrogen fluoride (HF) aqueous solution, pure water, etc. The temperature adjustment control unit 10 adjusts each of these treatment liquids to a temperature suitable for treatment. Suitable temperature for treatment such as: sulfuric acid (H ₂ SO ₄ ) is 70°C to 170°C, SPM is 150°C, phosphoric acid (H ₃ PO ₄ ) aqueous solution is 150°C to 170°C, SC1 is 40°C, SC2 is 50 degrees Celsius, and pure water is 40 degrees to 80 degrees Celsius. In addition, the processing liquid used for processing in the substrate processing unit 20 is returned to the temperature adjustment control unit 10 via the return pipe 116. The returned processing liquid is adjusted to a temperature suitable for processing by the temperature adjustment control unit 10 and is supplied to the substrate processing unit 20, thereby being reused for processing in the substrate processing unit 20. The temperature adjustment control unit 10 cools the processing liquid that has passed its life time due to continuous reuse to a temperature at which the waste liquid can be used, and discharges (discharges) the cooled processing liquid through the waste liquid piping 61 to the plant located in the factory. The waste liquid piping is the factory waste liquid piping 200.

The substrate processing unit 20 is a unit that processes substrates. The substrate processing unit 20 may be a single-chip type in which a processing liquid is discharged and processed one substrate at a time, or a batch type in which a plurality of substrates are collectively immersed in the processing liquid for processing. The processing liquid adjusted to a temperature suitable for processing is supplied from the temperature adjustment control unit 10 to the substrate processing unit 20, and the supplied processing liquid is stored in a storage tank. The substrate processing unit 20 uses the processing liquid stored in the storage tank to process the substrate. The substrate processing unit 20 discharges the processing liquid to the factory waste liquid piping 200 through the waste liquid piping 62 during the concentration control of the processing liquid or the replacement of the processing liquid in the storage tank.

The functional blocks of the substrate processing apparatus 100 will be described. FIG. 2 is an example of a functional block diagram of the substrate processing apparatus 100. The temperature adjustment control unit 10 and the substrate processing unit 20 described above are integratedly controlled by the control unit 55. The hardware configuration of the control unit 55 is the same as that of a general computer. That is, the control unit 55 is equipped with a CPU (Central Processing Unit) 551 for performing various arithmetic processing, a read-only memory (ROM (Read-Only Memory)) 552 for storing basic programs, RAM (Random Access Memory) 553, which stores various information, which can be read and written freely, and disk 554, which stores control applications or data in advance. In this embodiment, the CPU 551 of the control unit 55 executes a predetermined program P to perform temperature adjustment of the processing liquid, execution of substrate processing by the substrate processing unit, and discharge of the processing liquid. The above-mentioned program P is stored in the storage unit 57.

Each configuration of the substrate processing apparatus 100 will be further described. The temperature adjustment control unit 10 includes a heating unit 11 for heating the treatment liquid and a cooling unit 12 for cooling the treatment liquid. FIG. 3 is a diagram illustrating the outline of the internal structure of the heating unit 11. The heating unit 11 is a unit for heating the processing liquid to a temperature suitable for processing. In the heating unit 11, the processing liquid is stored in the tank 111. The internal piping 112 has a first connection portion 1121 connected to the bottom (or its vicinity) of the groove 111 and a second connection portion 1122 connected to the upper portion (for example, upper wall portion or upper side wall portion) of the groove 111, and is formed The processing liquid sent out from the tank 111 via the first connection portion 1121 passes through the second connection portion 1122 to the piping of the circulating flow path returned to the tank 111. A heating unit 113 and a thermometer 114 are interposed in the internal pipe 112, and the heating unit 113 is arranged on the first connection portion 1121 side of the thermometer 114.

The processing liquid stored in the tank 111 is sent to the internal pipe 112, and the sent processing liquid is heated by the heating unit 113. The temperature of the processing liquid heated by the heating unit 113 is measured by a thermometer 114 provided in the internal pipe 112 and returned to the tank 111. Through the circulation of the processing liquid, the processing liquid stored in the tank 111 is adjusted to a temperature suitable for processing. The supply pipe 115 is a pipe connected by a pipe between the first connection portion 1121 and the heating portion 113 in the internal pipe 112, and a supply valve (not shown) is interposed. With the supply valve, the delivery of the processing liquid to the supply pipe 115 can be controlled. If the temperature of the processing liquid is adjusted to a temperature suitable for processing, the supply valve is opened. Thereby, the processing liquid stored in the tank 111 is sent to the substrate processing unit 20 via the supply pipe 115.

The return piping 116 is a piping whose one end is connected to the substrate processing unit 20 and the other end is connected to the upper part of the tank 111 (for example, the upper wall part or the upper side wall part). The processing liquid used in the substrate processing unit 20 is returned to the tank 111 by the return pipe 116. The processing liquid returned to the tank 111 via the return piping 116 is temperature-controlled in the heating unit 11 and is reused for processing. The waste liquid piping 117 is a piping connecting the bottom (or its vicinity) of the tank 111 and the cooling unit 12. Due to the repeated reuse, the processing liquid whose life time has passed is sent to the cooling unit 12 through the waste liquid pipe 117. The tank 111, the heating part 113 and the thermometer 114 are housed in the housing 110, and a blocking member 1101 is provided on the inner wall of the housing 110. The heating part 113 is an example of "supply means" and "heating means".

4 is a diagram showing an example of the structure near the heating portion 113 of the heating unit 11. The heating unit 113 includes a plurality of halogen lamps 1131. Each of the plural halogen lamps 1131 is installed along the internal pipe 112. Each of the halogen lamps 1131 is arranged so that the emission surface 1132 that emits light or heat faces the internal pipe 112. When the halogen lamp 1131 emits heat from the emission surface 1132, the processing liquid flowing in the internal pipe 112 is heated. Furthermore, in the first embodiment, as shown in FIG. 4, it is difficult to install a plurality of halogen lamps 1131 in a plurality of positions inside the frame 110, but the implementation of the present invention is not limited to this, and may be installed in the frame 110 A halogen lamp 1131 is installed inside.

If the light or heat emitted from the halogen lamp 1131 leaks out of the heating unit 11, the environment in the factory where the substrate processing apparatus 100 is installed will be changed. In order to stabilize the quality of the processing performed by the substrate processing apparatus 100, the environment (temperature, humidity, etc.) in the factory is strictly managed. If the environment in the factory changes, there is a possibility that the quality of the processing will decrease. Therefore, the inner wall of the frame body 110 of the heating unit 11 is covered by the blocking member 1101 that blocks light and heat. The blocking member 1101 includes a heat insulating member that suppresses the leakage of heat to the outside of the frame 110 and a light shielding member that suppresses the leakage of light to the outside of the frame 110. With the blocking member 1101, the leakage of light and heat to the outside of the heating unit 11 can be suppressed.

However, the energy used to heat the treatment liquid by the halogen lamp 1131 is, for example, about 95% of the light or heat emitted by the halogen lamp 1131, and the remaining 5% will affect the heating unit 11 other than the internal piping 112 The member is heated, or the blocking member 1101 is heated. The halogen lamp 1131 is an example of "supply means" and "heating means". The case where the halogen lamp 1131 emits light or heat is an example of the "supply step". The frame 110 is an example of the "frame". The blocking member 1101 is an example of "suppression means", "blocking member" and "heat insulation material".

Therefore, out of the light or heat emitted by the halogen lamp 1131, for example, 5% is not effectively used. Therefore, in this embodiment, the shielding member 1101 is provided with a plurality of power generating units 118 that generate power based on heat or light. The power generation unit 118 includes a photovoltaic power generation device 1181 and a thermal power generation device 1183. Furthermore, in the first embodiment, as shown in FIG. 4, a plurality of power generating units 118 are provided in a plurality of locations inside the frame 110, but the implementation of the present invention is not limited to this, and may be applied to the frame. A power generation unit 118 is provided inside 110.

The photovoltaic power generation device 1181 is installed on the emission surface 1132 side of the halogen lamp 1131 in the power generation section 118, and has the function of receiving direct light or indirect light from the halogen lamp 1131 (reflected or scattered by the internal piping 112 and other parts of the frame 110). Light) of the light-receiving surface 1182. The photovoltaic power generation device 1181 is a device that uses the photoelectric effect generated by the light incident on the light receiving surface 1182 to generate power. The photovoltaic power generation device 1181 is, for example, a silicon photovoltaic power generation device, a compound photovoltaic power generation device, an organic photovoltaic power generation device, and the like. The thermal power generation device 1183 is provided on the opposite side of the emission surface 1132 via the photovoltaic power generation device 1181 in the power generation unit 118, and has a heating surface 1184 that receives heat from the halogen lamp 1131. The thermal power generation device 1183 is a device that generates power by receiving heat from the heating surface 1184. The thermal power generation device 1183 may use, for example, a Spin Seebeck heat exchange device or a Peltier element.

The power generating unit 118 is installed such that the light receiving surface 1182 and the heating surface 1184 face the halogen lamp 1131 via the internal pipe 112. The power generation unit 118 generates power based on the remaining heat and light that are not used for heating the treatment liquid flowing through the internal pipe 112. Since the photovoltaic power generation device 1181 is arranged on the halogen lamp 1131 side of the thermal power generation device 1183, the light emitted from the halogen lamp 1131 and the light in heat can easily reach the photovoltaic power generation device 1181 directly. In addition, the light and heat in the heat emitted from the halogen lamp 1131 can reach the thermal power generation device 1183 through the photovoltaic power generation device 1181 or other parts of the power generation unit 118 by heat conduction or the like. Therefore, if the photovoltaic power generation device 1181 and the thermal power generation device 1183 are arranged in this order, the power generation efficiency of the power generation unit 118 can be maintained high. The power generation unit 118 is an example of "power generation means". The photovoltaic power generation device 1181 is an example of a "photovoltaic power generation unit". The thermal power generation device 1183 is an example of a "thermal power generation unit".

The power generation unit 118 transmits the generated electric power to the power storage unit 119 included in the heating unit 11 via the transmission line 1186. The power storage unit 119 is a means for storing electric power, such as a nickel-hydrogen battery, a lithium-ion battery, a lead storage battery, a sodium-sulfur battery, and the like. The electric power stored in the power storage unit 119 is used for driving the temperature adjustment control unit 10. One end of the transmission line 1186 is connected to the power storage unit 119, and the other end of the transmission line 1186 is connected to one of the plurality of power generation units 118. The transmission line 1186 has a branch portion 1189 that branches into a plurality of lines in the middle of the transmission line 1186. In addition, the other ends of the branch of the transmission line 1186 are respectively connected to the power generation section 118 of the plurality of power generation sections 118 that is not connected to the other end of the transmission line 1186. Here, the wire on the side of the power storage unit 119 from the branch portion 1189 of the transmission wire 1186 is referred to as the merged transmission wire 1187, and the wire on the side of the power generation portion 118 from the branch portion 1189 is referred to as the branch transmission wire 1188.

In the transmission line 1186, a power meter 1185 is provided near the other end of the transmission line 1186 and each of the branch transmission lines 1188 connected to the plurality of power generation units 118. The power meter 1185 measures the power generated by the power generation unit 118 or detects the presence or absence of the generated power. The measurement and detection actions using the power meter 1185 will be described later.

FIG. 5 is a diagram showing an example of the internal structure of the cooling unit 12 of the temperature adjustment control unit 10. The treatment liquid used for the treatment becomes high temperature due to heating by the heating unit 11, and therefore cannot be directly discharged to the factory waste liquid piping 200. The cooling unit 12 is a unit that cools the treatment liquid to a temperature that can be discharged before the treatment liquid is discharged. The cooling unit 12 has a waste liquid pipe 117 connected to the heating unit 11 at one end, and an internal pipe 121 connected to the waste liquid pipe 61 at the other end. The processing liquid discharged from the heating unit 11 flows into the internal pipe 121 through the waste liquid pipe 117. With respect to the internal pipe 121 through which the processing liquid flows, a plurality of cooling units 122 are provided along the internal pipe 121. Cold water circulates inside the cooling part 122, and the surface of the cooling part 122 is provided with a cooling surface 1221 through which the cold water exchanges heat with the outside. Each of the plural cooling parts 122 is arranged so that the cooling surface 1221 faces the internal pipe 121 (or the cooling surface 1221 is in contact with the internal pipe 121). The cooling surface 1221 exchanges heat between the processing liquid and the cold water in the internal pipe 121 via the cooling surface 1221, thereby cooling the processing liquid flowing in the internal pipe 121.

The processing liquid flowing in the internal pipe 121 is high temperature as described above. Therefore, in order to prevent the heat of the treatment liquid from leaking to the outside of the cooling unit 12, the inner wall of the frame 120 of the cooling unit 12 is covered with a heat insulating material 1201. The heat insulating material 1201 prevents heat from leaking out of the frame 120. The thermal power generation device 123 is installed on the heat insulating material 1201. The thermal power generation device 123 may employ, for example, a rotating Seebeck heat exchange device or a Peltier element. The thermal power generation device 123 can generate power by using heat received from the processing liquid flowing in the internal pipe 121.

The thermoelectric power generation device 123 transmits the generated electric power to the power storage unit 129 via the transmission line 125. The power storage unit 129 is a means for storing electric power similarly to the power storage unit 119 provided in the heating unit 11, and is, for example, a nickel-hydrogen battery, a lithium ion battery, a lead storage battery, a sodium-sulfur battery, and the like. The electric power stored in the power storage unit 129 is used for driving the temperature adjustment control unit 10. One end of the transmission line 125 is connected to the power storage unit 129, and the other end of the transmission line 125 is connected to one of the plurality of thermal power generation devices 123. The transmission line 125 has a branch portion 128 that branches into a plurality of lines in the middle of the line of the transmission line 125. In addition, the other ends of the branches of the transmission line 125 are respectively connected to the thermoelectric power generation devices 123 that are not connected to the other end of the transmission line 125 among the plurality of thermal power generation devices 123. Here, the wire on the side of the power storage unit 129 from the branch portion 128 of the transmission wire 125 is referred to as the merged transmission wire 126, and the wire on the side of the thermal power generation device 123 from the branch portion 128 is referred to as the branch transmission wire 127.

In the transmission line 125, a power meter 124 is provided near the other end of the transmission line 125 and each of the branch transmission lines 127 connected to the plurality of thermal power generation devices 123. The power meter 124 measures the power generated by the thermal power generation device 123 or detects the presence or absence of the generated power. The measurement and detection actions using the power meter 124 will be described later.

FIG. 6 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus 100, and mainly shows the processing realized by the control unit 55 executing the program P. Hereinafter, the operation of the substrate processing performed by the substrate processing apparatus 100 will be described while referring to FIGS. 1 to 6 as appropriate.

First, in the temperature adjustment control unit 10, the treatment liquid is heated (supply step S1). More specifically, the heating unit 113 of the heating unit 11 is operated by an operation command from the control unit 55 to heat the processing liquid in the internal pipe 112. If the temperature of the processing liquid is adjusted to a temperature suitable for processing, the heated processing liquid detected by the thermometer 114 is supplied from the temperature adjustment control unit 10 to the substrate processing unit 20 through the supply pipe 115. In addition, the processing liquid used for processing in the substrate processing unit 20 is returned from the substrate processing unit 20 to the temperature adjustment control unit 10 via the return pipe 116. The supply step S1 is an example of the "supply step".

Next, the suppression step S2 is executed. In the suppression step S2, the heat or light emitted from each part can be suppressed from leaking out of the temperature adjustment control unit 10. Specifically, the light-receiving surface 1182 and the blocking member 1101 are used to block the light emitted from the heating part 113 in the supply step S1, and the heating surface 1184 of the thermoelectric generator 1183 and the blocking member 1101 are used to block the self-heating. The heat emitted by the portion 113 prevents light or heat from leaking out of the heating unit 11. In addition, among the processing liquid heated in the supply step S1, the processing liquid whose life time has passed is cooled by the cooling unit 12 by passing through the internal pipe 121, and is then discharged to the factory waste liquid pipe 200. At this time, the heat receiving surface 1231 of the thermoelectric power generation device 123 provided in the cooling unit 12 blocks the heat emitted from the internal pipe 121, thereby preventing the heat from leaking out of the cooling unit 12. The suppression step S2 is an example of the "suppression step".

Next, the power generation step S3 is executed. In the power generation step S3, the light or heat received by the light-receiving surface 1182 or the heat-receiving surface 1184, 1231 in the step S2 is suppressed, and the photovoltaic power generation device 1181 or the thermal power generation device 1183, 123 performs power generation. The power generation step S3 is an example of the "power generation step".

Then, the detection step S4 is executed. In the detection step S4, the control unit 55 detects the power values measured by the power meters 1185 and 124. Electricity meters 1185 and 124 are examples of "detection means".

Next, the determination step S5 is executed. In the determination step S5, the control unit 55 determines the operation state of the substrate processing apparatus 100 based on the power value detected in the detection step S4. For example, the power generation range of the heating unit 11 during normal operation (hereinafter referred to as the heating unit power generation range) is stored in the storage unit 57 in advance, and the power value detected by the power meter 1185 is compared with the power generation of the heating unit. The control unit 55 determines whether an abnormality has occurred in the substrate processing apparatus 100 (for example, the heating unit 113).

In addition, for example, the range of the power generation amount when the cooling unit 12 is operating normally (hereinafter referred to as the cooling unit power generation range) is stored in the storage unit 57 in advance, and the power value detected by the power meter 124 is compared with the cooling unit In the range of the power generation amount range, the control unit 55 determines whether an abnormality has occurred in the substrate processing apparatus 100 (for example, the cooling unit 122). The control unit 55 that determines the operating state of the substrate processing apparatus 100 is an example of "determination means". The keyboard 101 is an example of "input means".

Next, the notification step S6 is performed. In the notification step S6, if it is determined that an abnormality has occurred in the determination step S5, the control unit 55 performs abnormal notification using the buzzer 102 or the warning light 103. Furthermore, in the first embodiment, the execution of the notification step S6 is not necessary, and it may be configured to directly execute the control step S7 described later based on the result of the determination step S5. The buzzer 102 and the warning light 103 are examples of "notification means".

Then, the control step S7 is executed. In the control step S7, control corresponding to the judgment result of the judgment step S5 is performed. For example, the control unit 55 can determine that the heating by the halogen lamp 1131 is too weak when the power value measured by the power meter 1185 is lower than the power generation range of the heating unit. In this case, the control unit 55 increases the output of the halogen lamp 1131 to increase the amount of heat supplied to the treatment liquid by the halogen lamp 1131 based on the determination result.

Also, for example, when the amount of electric power measured by the electric power meter 1185 exceeds the power generation range of the heating unit, the control unit 55 may determine that the heating by the halogen lamp 1131 is too strong. In this case, the control unit 55 reduces the output of the halogen lamp 1131 or stops at least a part of the halogen lamp 1131 based on the determination result, so that the amount of heat supplied to the treatment liquid by the halogen lamp 1131 is reduced. The control unit 55 reduces the output of the halogen lamp 1131 or stops at least a part of the halogen lamp 1131, thereby reducing the power consumption of the heating unit 11, that is, reducing the power consumption of the substrate processing apparatus 100.

Also, for example, when the amount of electric power measured by the power meter 124 exceeds the power generation range of the cooling unit, the control unit 55 may determine that the cooling by the cooling unit 122 is too weak. In this case, the control unit 55 promotes the cooling of the processing liquid by increasing the flow rate of the cold water supplied to the cooling unit 122 or decreasing the temperature of the cold water supplied to the cooling unit 122.

Also, for example, when the power value measured by the power meter 124 is lower than the power generation range of the cooling unit, the control unit 55 can determine that the cooling performed by the cooling unit 122 is too strong. In this case, the control unit 55 reduces the flow rate of the cold water supplied to the cooling unit 122, weakens the cooling of the cold water supplied to the cooling unit 122, or stops at least a part of the cooling unit 122, so that the processing liquid is not excessively cooled . The control unit 55 can also reduce the power consumption of the cooling unit 12, that is, the power consumption of the substrate processing apparatus 100, by weakening the cooling of the cold water or stopping at least a part of the cooling unit 122.

In addition, for example, the control unit 55 can also control the halogen lamp 1131 or the cooling unit 122 by inputting a control command through the keyboard 101 by a user who knows that an abnormality has occurred due to the notification step S6.

<Effects of the first embodiment>

In the first embodiment, in the heating unit 11 of the substrate processing apparatus 100, the photovoltaic power generation device 1181 or the thermal power generation device 1183 uses thermal energy or light energy that is not used for heating the processing liquid to generate power. The generated electric power is stored in the power storage unit 119 and used to drive the device. Therefore, energy saving of the substrate processing apparatus 100 can be realized.

In the first embodiment, in the cooling unit 12 of the substrate processing apparatus 100, the thermal heating and power generation device 123 of a high-temperature processing liquid is used to generate electricity. The generated electric power is stored in the power storage unit 129 and used for driving the device. Therefore, energy saving of the substrate processing apparatus 100 can be realized.

In the first embodiment, the generated power is measured by the power meters 1185 and 124. The control unit 55 can detect abnormalities in the temperature adjustment control unit 10 or the substrate processing unit 20 by comparing the range of the power generation amount when the device is operating normally and the current value measured by the power meters 1185 and 124. In addition, the control unit 55 controls the halogen lamp 1131 and the cooling unit 122 according to the determination result of the measurement results using the power meters 1185 and 124, so that these can be operated in an appropriate temperature range. In addition, since the control unit 55 performs notification using the buzzer 102 or the warning light 103 based on the determination result, it can notify the operator of the abnormality of the substrate processing apparatus 100.

<First modification>

In the first embodiment, the power generation unit 118 in the heating unit 11 is arranged in the housing 110. In the first modification example, an example in which the power generation unit 118 is arranged outside the housing 110 will be described. FIG. 7 is a diagram showing an example of the heating unit 11a of the first modification. In the heating unit 11a, the power generation unit 118 is arranged in contact with the outer wall of the housing 110. With the power generation part 118 being configured in this way, the power generation part 118 can generate power based on the light or heat leaked to the outside of the housing 110 through the housing 110. That is, the photovoltaic power generation device 1181 of the power generation unit 118 can use the received light to generate power while blocking the light leaking to the outside of the housing 110 by the light receiving surface 1182. In addition, the thermal power generation device 1183 of the power generation unit 118 can use the received heat to generate power while blocking the heat leaking to the outside of the frame 110 by the heating surface 1184.

Since the processing liquid is heated, the inside of the housing 110 tends to become high temperature, and the power generation part 118 also has a tendency to reduce the power generation efficiency in a high temperature environment. By providing the power generating part 118 outside the frame 110, the power generating part 118 can be arranged in a lower temperature environment than the inside of the frame 110. Therefore, even if the power generation part 118 whose power generation efficiency is reduced in a high temperature environment is used, the reduction in power generation efficiency can be suppressed according to the first modification.

<Second Modification>

In the first embodiment, the cooling unit 122 is arranged along the internal pipe 121 in the cooling unit 12 to cool the processing liquid. In the second modification, the tank for storing the cooled processing liquid is provided in the cooling unit, and a cooling part is provided in the tank.

FIG. 8 is a diagram showing an example of the cooling unit 12a of the second modification. FIG. 8 shows an example of the vicinity of the groove 1202 of the cooling unit 12a. A waste liquid pipe 117 from the heating unit 11 is connected to the upper part of the tank 1202 (for example, the upper wall part or the upper side wall part). In addition, an internal pipe 121 is connected to the bottom of the tank 1202 (or near it). In the tank 1202, the cooling part 122a is immersed in the stored treatment liquid.

The cooling part 122a, like the cooling part 122, circulates cold water inside. The outer surface of the cooling portion 122a becomes the cooling surface 1221, and exchanges heat with the processing liquid in the tank 1202. The cooling portion 122a is formed by providing a plurality of protrusions. Thereby, compared with forming the cooling portion 122a into a linear shape, the area for heat exchange between the processing liquid and the cooling water in the tank 1202 can be increased, and the cooling efficiency of the cooling portion 122a can be improved. Furthermore, the cooling portion 122a is not limited to a shape having a plurality of protrusions, and other shapes (for example, a shape wound into a spiral shape or a spiral shape) may be adopted.

On the outer side of the outer wall 1203 of the tank 1202, a plurality of thermoelectric power generation devices 123a are provided. The thermoelectric power generation device 123a is configured such that the heat receiving surface 1231a is in contact with the outer wall 1203 of the groove 1202. Since the thermoelectric power generation device 123a is configured in this way, the thermoelectric power generation device 123a can suppress heat leaking out of the groove 1202 through the outer wall 1203 of the groove 1202. In addition, the thermal power generation device 123a can perform thermal power generation by receiving the leaked heat with the heating surface 1231a.

<3rd modification>

In the first embodiment, in the heating unit 11, the power generation part 118 is arranged in a partial area of the blocking member 1101, but the power generation part 118 may be arranged on the entire inner surface of the blocking member 1101. In addition, in the first embodiment, in the cooling unit 12, although the thermoelectric power generation device 123 is arranged in a partial area of the heat insulating material 1201, the thermoelectric power generation device 123 may be arranged on the entire inner surface of the heat insulating material 1201.

<Fourth Modification>

In the first embodiment, although both the photovoltaic power generation device 1181 and the thermal power generation device 1183 are provided in the heating unit 11, any one of the photovoltaic power generation device 1181 and the thermal power generation device 1183 may be provided.

<Second Embodiment>

In the first embodiment, the heating of the treatment liquid or the heat of the treatment liquid is used to generate electricity. In the second embodiment, a description will be given of a configuration in which power generation is generated by using the heat of the heating treatment of the substrate. The same components as those of the first embodiment are given the same symbols, and their descriptions are omitted. Hereinafter, the second embodiment will be described with reference to the drawings.

Fig. 9 is a diagram showing an example of the heat treatment section 21 of the second embodiment. The processing of the substrate W in the substrate processing unit 20 may include heat processing performed by the heat processing unit 21. For example, when removing the resist film from the surface of the substrate W, the heat treatment section 21 discharges the SPM supplied from the temperature adjustment control unit 10 through the supply pipe 115 to the surface of the substrate W, and performs SPM on the surface of the substrate W. heating. The resist is removed from the surface of the substrate W by the strong oxidizing power of peroxymonosulfuric acid (H ₂ SO ₅ ) contained in the SPM. The heat processing unit 21 is arranged in the substrate processing unit 20 and heats the substrate W. The heating processing unit 21 accommodates a platform 22 on which the substrate W is placed, an infrared lamp 23 for heating the substrate W placed on the platform 22 from above, and a discharge nozzle 24 for discharging SPM to the substrate W in the housing 210. In order to prevent the heat from leaking from the infrared lamp 23 to the outside of the heat treatment part 21, the heat treatment part 21 is further provided with a heat insulating material 211 on the inner wall of the housing 210. The infrared lamp 23 is an example of "supply means".

In the heat treatment unit 21, a thermal power generation device 25 is provided on the heat insulating material 211. The thermal power generation device 25 is installed at a position where the heating surface 251 can receive the infrared rays emitted from the infrared lamp 23, and is installed on the heat insulating material 211. That is, in the heat treatment section 21, the thermoelectric power generation device 25 generates power based on the remaining heat that is not used for heating the substrate W. In the heating processing section 21, the thermoelectric power generation device 25 transmits the generated electric power to the power storage section 257 included in the heating processing section 21, and the power storage section 257 stores the transmitted electric power. The electric power stored in the power storage unit 257 is used for driving the substrate processing unit 20. One end of the transmission line 253 is connected to the power storage unit 257, and the other end of the transmission line 253 is connected to one of the plurality of thermal power generation devices 25. The transmission line 253 has a branch portion 256 that branches into a plurality of lines in the middle of the line of the transmission line 253. In addition, the other ends of the branch of the transmission line 253 are respectively connected to the thermal power generation device 25 of the plurality of thermal power generation devices 25 that is not connected to the other end of the transmission line 253. Here, the line of the transmission line 253 on the side of the power storage unit 257 from the branch portion 256 is referred to as the merged transmission line 254, and the line on the side of the thermal power generation device 25 from the branch portion 256 is referred to as the branch transmission line 255.

In the transmission line 253, a power meter 252 is provided near the other end of the transmission line 253 and each of the branch transmission lines 255 connected to the plurality of thermal power generation devices 25. The power meter 252 measures the power generated by the thermal power generation device 25 or detects the presence or absence of the generated power. The measurement and detection actions performed by the power meter 252 will be described later.

The substrate treatment performed by the heat treatment section 21 of the second embodiment having the configuration described above will be described with reference to FIG. 6.

In the supply step S1, heating of SPM as a processing liquid is performed. More specifically, the heating unit 113 of the heating unit 11 is operated by an operation command from the control unit 55 to heat the processing liquid in the internal pipe 112. If the temperature of the processing liquid has been adjusted to a temperature suitable for processing is detected by the thermometer 114, the heated processing liquid is supplied from the temperature adjustment control unit 10 to the substrate processing unit 20 through the supply pipe 115 Heat treatment part 21. In the heat treatment section 21, SPM as a treatment liquid is discharged from the discharge nozzle 24 to the substrate W.

The SPM on the substrate W is heated by the infrared lamp 23 to heat the substrate W, so that the resist film is removed from the surface of the substrate W. In addition, the processing liquid used for processing in the heat processing unit 21 is returned from the substrate processing unit 20 to the temperature adjustment control unit 10 via the return pipe 116. The process of heating the processing liquid in the internal pipe 112 by the heating unit 113 and the process of heating the substrate W by the infrared lamp 23 in the supply step S1 are examples of the "supply step".

In the suppression step S2, the heat emitted from the infrared lamp 23 is suppressed from leaking to the outside of the heating treatment section 21. Specifically, the heat receiving surface 251 and the heat insulating material 2101 of the thermoelectric generating device 25 block the heat emitted from the infrared lamp 23 in the supply step S1, thereby suppressing the leakage of heat to the outside of the heat treatment section 21. The suppression step S2 is an example of the "suppression step".

In the power generation step S3, the thermoelectric power generation device 25 uses the heat received by the heating surface 251 in the suppression step S2 to generate power. The power generation step S3 is an example of the "power generation step".

In the detection step S4, the control unit 55 detects the power value measured by the power meter 252.

In the determination step S5, the control unit 55 determines the operation state of the substrate processing apparatus 100 based on the power value detected in the detection step S4 as the detection result. For example, the power generation range (hereinafter referred to as the heating power generation range) when the heating treatment unit 21 is operating normally is stored in the storage unit 57 in advance, and the power value detected by the power meter 252 is compared with the heating treatment In the power generation range, the control unit 55 determines whether an abnormality has occurred in the substrate processing apparatus 100.

For example, the control unit 55 can determine that the heating by the infrared lamp 23 is too strong when the current value measured by the power meter 252 is higher than the power generation range of the heating treatment. In this case, the control unit 55 reduces the output of the infrared lamp 23 or stops at least a part of the infrared lamp 23 according to the determination result, so that the amount of heat supplied from the infrared lamp 23 to the substrate W is reduced. The control unit 55 can reduce the power consumption of the heating processing unit 21, that is, the power consumption of the substrate processing apparatus 100, by reducing the output of the infrared lamp 23 or stopping at least a part of the infrared lamp 23.

In addition, for example, when the current value measured by the power meter 252 is lower than the heating processing power generation range, the control unit 55 may determine that the heating by the infrared lamp 23 is too weak. In this case, the control unit 55 increases the output of the infrared lamp 23 to increase the amount of heat supplied to the substrate W by the infrared lamp 23 based on the determination result.

<Effects of the second embodiment>

In the second embodiment, in the heating processing section 21 of the substrate processing apparatus 100, the thermoelectric power generation device 25 uses thermal energy not used for heating of the substrate W to generate electricity. The generated electric power is stored in the power storage unit 257 and used for driving the device. Therefore, as in the first embodiment, energy saving of the substrate processing apparatus 100 can be achieved even in the second embodiment.

In the second embodiment, the generated power is measured by the power meter 252. The control unit 55 can detect that an abnormality has occurred in the heating processing unit 21 by comparing the range of the power generation amount when the device is operating normally and the current value measured by the power meter 252. In addition, the control unit 55 controls the infrared lamp 23 according to the determination result of the measurement result using the power meter 252, so that the infrared lamp 23 can operate in an appropriate temperature range. In addition, since the control unit 55 performs notification using the buzzer 102 or the warning light 103 based on the determination result, it can notify the operator of the abnormality of the substrate processing apparatus 100.

<Fifth Modification>

In the first embodiment, the power generated in the heating unit 11 is stored in the power storage unit 119 in the heating unit 11, and the power generated in the cooling unit 12 is stored in the power storage unit 129 in the cooling unit 12. Furthermore, in the second embodiment, the electric power generated by the heating processing unit 21 of the substrate processing unit 20 is stored in the power storage unit 257 in the heating processing unit 21. However, the generated electric power may also be stored outside the power storage units 119, 129, and 257. FIG. 10 is a diagram showing an example of the configuration of a fifth modification in which an electric storage unit 30 is provided outside the temperature adjustment control unit 10 and the substrate processing unit 20. The power storage unit 30 is a unit that stores electric power, and is, for example, a nickel-hydrogen battery, a lithium ion battery, a lead storage battery, a sodium-sulfur battery, or the like. The temperature adjustment control unit 10 and the substrate processing unit 20 and the power storage unit 30 are electrically connected by a transmission wire 72. The power generated by the temperature adjustment control unit 10 and the substrate processing unit 20 may also be transmitted to the power storage unit 30 through the transmission line 72, and the power storage unit 30 stores the transmitted power. The electric power stored in the power storage unit 30 can be used for driving the temperature adjustment control unit 10 and the substrate processing unit 20, for example.

<The sixth modification>

In the second embodiment, the power storage unit 257 is arranged in the housing 210. However, the power storage unit 257 is not limited to being arranged in the frame 210, and may be arranged outside the frame 210. FIG. 11 is a diagram showing an example of the heat treatment portion 21a of the sixth modification. The heat treatment part 21a is arranged outside the housing 210 in the power storage part 257, and is different from the heat treatment part 21 of the second embodiment. The ambient gas in the frame 210 contains the constituent components of the processing liquid and the like. By disposing the power storage unit 257 outside the housing 210, it is possible to suppress the influence on the power storage unit 257 due to the components of the processing liquid contained in the ambient gas.

11‧‧‧Heating Unit

110‧‧‧Frame

112‧‧‧Internal piping

113‧‧‧Heating section

118‧‧‧Power Generation Department

119‧‧‧Power Storage Department

1101‧‧‧Interrupting member

1131‧‧‧Halogen lamp

1132‧‧‧Ejection surface

1181‧‧‧Photovoltaic power generation device

1182‧‧‧Light receiving surface

1183‧‧‧Thermal Power Plant

1184‧‧‧heated surface

1185‧‧‧Power meter

1186‧‧‧ Transmission wire

1187‧‧‧Combined transmission line

1188‧‧‧Branch transmission line

1189‧‧‧Branch

Claims (10)

A substrate processing device that uses a predetermined processing solution to perform a predetermined processing on a substrate; it is characterized in that it is provided with: a supply means that supplies the light used in the above-mentioned predetermined processing; a frame body that houses the above-mentioned supply means; And a suppression means for suppressing the leakage of the light toward the outside of the frame; the suppression means is provided with a power generation means including a photovoltaic power generation unit that generates power based on the light received from the supply means. The substrate processing apparatus of claim 1, wherein the supply means includes heating means for heating the processing liquid, and the suppression means includes a blocking means for suppressing leakage of light or heat supplied by the heating means to the outside of the housing member. The substrate processing apparatus of claim 1, wherein it is further provided with a detection means for detecting the presence or absence of power generation or the amount of power generation performed by the above-mentioned power generation means. The substrate processing apparatus of claim 3, wherein it is further provided with a judging means for judging whether an abnormality has occurred in the supply means based on the detection result detected by the detecting means. The substrate processing apparatus according to claim 4, which further includes a control unit that controls the supply means based on the judgment result determined by the judgment means. For example, the substrate processing apparatus of claim 5, which further includes: notification means for notifying the determination result determined by the above determination means; and input means for receiving control commands from the user to control the above supply means的input; The above-mentioned control unit is judged by the above-mentioned means to determine that the above-mentioned supply means has issued When an abnormality occurs, the notification means is caused to execute the abnormal notification, and after the abnormal notification, the supply means is controlled in accordance with the control command accepted by the input means. The substrate processing apparatus of claim 1, wherein the supply means further supplies heat, the power generation means further includes a thermal power generation unit that receives the heat to generate power, and the photovoltaic power generation unit is arranged to supply more than the thermal power generation unit Means side. The substrate processing apparatus of claim 1, wherein the electric power generated by the power generation means is used for driving the substrate processing apparatus. The substrate processing apparatus according to any one of claims 1 to 8, which further includes a power storage unit that stores the power generated by the power generation means. A substrate processing method, which is performed by a substrate processing apparatus that uses a predetermined processing solution to perform predetermined processing on a substrate; characterized in that it has: a supply step, which supplies light; and a suppression step, which suppresses the light toward the substrate processing Leakage outside the device; and a power generation step, which uses the light that is prevented from leaking in the suppression step to generate power.

Images