JP2019149509A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

To use energy more effectively in a substrate processing apparatus.SOLUTION: A substrate processing apparatus that performs predetermined processing on a substrate by using a predetermined processing solution includes supply means for supplying light or heat used for the predetermined processing, a housing for accommodating the supply means, and suppression means for suppressing leakage of light or heat to the outside of the housing, and the suppression means is provided with power generation means for generating power on the basis of at least one of the light and the heat received from the supply means.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for discharging a processing liquid to a substrate such as a semiconductor wafer and performing an etching process and a cleaning process.

  In recent years, energy saving in factories has been demanded. For example, Patent Document 1 proposes a technique for reducing the amount of processing liquid used for processing a substrate. For example, Patent Document 2 proposes a substrate processing apparatus that converts thermal energy from a hot plate that heats a substrate into electric power energy, and uses the converted electric power energy for driving each part in the apparatus.

Japanese Patent Application Laid-Open No. 2006-162923 JP 2000-068183 A

  The substrate processing apparatus is installed in a temperature-controlled factory (for example, a clean room adjusted to 25 degrees Celsius). The substrate processing apparatus performs an etching process or a cleaning process on the substrate by discharging a processing liquid heated to a temperature suitable for processing by a heating unit to the substrate or immersing the substrate in the heated processing liquid. . In addition, the process of removing the resist film from the substrate may include a process of heating the substrate by a heating unit.

  When the lifetime of the processing liquid elapses, the processing liquid is drained (waste liquid) from the processing tank. The lifetime of the treatment liquid is a use time at which it is determined that the treatment itself is not sufficiently performed if the state of the treatment liquid changes and the treatment liquid is continuously used, and is determined in advance by an experiment or the like.

  If the heat from the heating means is discharged outside the substrate processing apparatus, the environment in the factory may change, and the processing quality of the substrate may be affected. For this reason, the inside of the substrate processing apparatus is covered with a heat insulating material or the like, and the discharge of heat to the outside of the substrate processing apparatus is suppressed. When the heating means emits light, such as a halogen lamp, the environment in the factory may change due to leakage of the light from the substrate processing apparatus, so that the light leaks from the substrate processing apparatus. A light shielding member is provided so as not to cause a problem.

  By the way, the part of the energy generated by the heating means that is not used for heating the processing liquid or the substrate is only shielded by the heat insulating material or the light shielding member, and the energy not used for heating the processing liquid or the substrate is effectively used. It was not utilized.

  Accordingly, one aspect of the disclosed technology is to more effectively use energy in a substrate processing apparatus.

One aspect of the disclosed technology is exemplified by the following substrate processing apparatus. The substrate processing apparatus is a substrate processing apparatus that performs predetermined processing on a substrate using a predetermined processing liquid. The substrate processing apparatus includes a supply unit that supplies light or heat used for a predetermined process, a housing that houses the supply unit, and a suppression unit that suppresses leakage of light or heat to the outside of the housing. The suppression means is provided with a power generation means for generating power based on at least one of light and heat received from the supply means.

  In the disclosed technology, leakage of light or heat used for a predetermined process to the outside of the casing is suppressed by the suppression unit, so that changes in the environment outside the substrate processing apparatus due to leakage of light or heat to the exterior of the casing are suppressed. Is done. The suppression means is provided with a power generation means, and the power generation means generates power based on light or heat supplied by the supply means. Therefore, the light or heat supplied by the supply means can be used more effectively.

  In the disclosed technology, the supply unit may include a heating unit that heats the processing liquid, and the suppression unit may include a blocking member that suppresses leakage of light or heat supplied from the heating unit to the outside of the housing. According to such a technique, even if the treatment liquid is heated, leakage of heat or light used for heating to the outside of the casing is suppressed.

  The disclosed technology may further include detection means for detecting the presence or absence of power generation by the power generation means or the amount of power generation. According to such a technique, the amount of power generated by the power generation means can be monitored.

  The disclosed technology may further include a determination unit that determines whether an abnormality has occurred in the supply unit based on a detection result of the detection unit. The amount of power generated by the power generation means depends on the amount of light and heat supplied by the supply means. Therefore, it is possible to determine whether an abnormality has occurred in the supply unit by monitoring the power generation amount.

  The disclosed technology may further include a control unit that controls the supply unit based on a determination result by the determination unit. As described above, the amount of power generated by the power generation means depends on the amount of light and heat supplied by the supply means. Therefore, whether the amount of light and heat supplied by the supply means is appropriate by detecting the amount of power generation. Can be determined. When it is determined that the amount of light or heat supplied by the supply unit is not appropriate, the control unit can control the supply unit so that the amount of light or heat is appropriate.

  The disclosed technology further includes a notifying unit that notifies a determination result by the determining unit, and an input unit that receives an input of a control command for controlling the supplying unit from the user, and the control unit causes the supplying unit to be abnormal by the determining unit. When it is determined that the alarm has occurred, the notifying unit may execute an abnormality notification, and after the abnormality notification, the supplying unit may be controlled in accordance with a control command received by the input unit. The notification means is, for example, a buzzer that notifies a determination result to a user who uses the substrate processing apparatus, a warning light, or the like. Since it is determined that an abnormality has occurred in the supply unit, the control unit causes the notification unit to execute the abnormality notification, so that the user can be notified that an abnormality has occurred in the substrate processing apparatus. The user who is notified of the determination result by the notification unit inputs a control command for controlling the supply unit via the input unit. The control unit controls the supply unit according to the control command. According to such a technique, when it is determined that the supply unit is not operating normally, the supply unit can be controlled in accordance with an instruction from the user.

  In the disclosed technology, the supply unit may supply at least light, the suppression unit may suppress leakage of light out of the housing, and the power generation unit may include a photovoltaic unit that receives light and generates power. According to such a technique, the photovoltaic unit can generate electric power with the light supplied by the supply means.

In the disclosed technology, the supply unit further supplies heat, the power generation unit further includes a thermoelectric generation unit that generates power by receiving heat, and the photovoltaic unit is disposed closer to the supply unit than the thermoelectric generation unit. According to such a technique, it is possible to generate power based on both light and heat supplied by the supply means. Moreover, since the photovoltaic unit is arranged closer to the supply means than the thermoelectric generator unit, a decrease in the amount of power generated by the photovoltaic unit due to the light supplied by the supplier being blocked by the thermoelectric generator unit is suppressed. The electric power generated by the power generation means may be used for driving the substrate processing apparatus. Moreover, you may further provide the electrical storage unit which accumulates the electric power generated by the electric power generation means.

  The disclosed technology can also be grasped from the side of the substrate processing method.

  The technology of the present disclosure can more effectively utilize energy in a substrate processing apparatus.

FIG. 1 is a diagram illustrating an example of a configuration of a substrate processing apparatus according to an embodiment. FIG. 2 is an example of a functional block diagram of the substrate processing apparatus. FIG. 3 is a diagram illustrating an outline of the internal structure of the heating unit. FIG. 4 is a diagram illustrating an example of the structure in the vicinity of the heating unit of the heating unit. FIG. 5 is a diagram illustrating an example of the internal structure of the cooling unit of the temperature control unit. FIG. 6 is a flowchart for explaining an example of substrate processing by the substrate processing apparatus. FIG. 7 is a diagram illustrating an example of a heating unit according to the first modification. FIG. 8 is a diagram illustrating an example of the cooling unit according to the second modification. FIG. 9 is a diagram illustrating an example of a heat treatment unit of the substrate processing unit according to the second embodiment. FIG. 10 is a diagram illustrating an example of a configuration according to a fifth modification in which a power storage unit is provided outside the temperature control unit and the substrate processing unit. FIG. 11 is a diagram illustrating an example of a heat treatment unit according to a sixth modification.

  Hereinafter, a substrate processing apparatus and a substrate processing method using the substrate processing apparatus according to an embodiment will be described with reference to the drawings. The configuration of the embodiment described below is an exemplification, and the disclosed technology is not limited to the configuration of the embodiment.

<First Embodiment>
FIG. 1 is a diagram illustrating an example of a configuration of a substrate processing apparatus 100 according to the embodiment. The substrate processing apparatus 100 performs an etching process or a cleaning process (hereinafter also simply referred to as “processing”) on a substrate using a processing solution containing one or more chemical solutions and pure water. The treatment liquid may be, for example, a mixed acid aqueous solution containing at least one of phosphoric acid, nitric acid, and acetic acid and pure water, a hydrogen fluoride aqueous solution, pure water, or isopropyl alcohol (IPA). The substrate processing apparatus 100 includes a temperature control unit 10 and a substrate processing unit 20. The temperature control unit 10 and the substrate processing unit 20 are provided on the floor of the factory floor F, and the waste liquid pipes 61 and 62 are provided below the floor F. The substrate processing apparatus 100 also includes a keyboard 101 that receives input from an operator, a buzzer 102 that notifies an abnormality of a device, and a warning lamp 103. Hereinafter, the substrate processing apparatus 100 will be described with reference to FIG. The process is an example of “predetermined process”.

The temperature control unit 10 heats and cools the processing liquid used for processing the substrate. For example, the temperature control unit 10 adjusts the temperature of the processing liquid to a temperature suitable for processing, and supplies the adjusted processing liquid to the substrate processing unit 20 via the supply pipe 115. The treatment liquid is, for example,
Sulfuric acid (H ₂ SO ₄ ), SPM (mixed solution of sulfuric acid and hydrogen peroxide solution), phosphoric acid (H ₃ PO ₄ ) aqueous solution, SC1 (mixed aqueous solution of ammonia and hydrogen peroxide), SC2 (ammonia and hydrochloric acid solution) Mixed aqueous solution), hydrogen fluoride (HF) aqueous solution, pure water and the like. The temperature control unit 10 adjusts each of these processing liquids to a temperature suitable for processing. Suitable temperatures for the treatment are, for example, 70 to 170 degrees Celsius for sulfuric acid (H ₂ SO ₄ ), 150 degrees Celsius for SPM, and 150 to 170 degrees Celsius for an aqueous phosphoric acid (H ₃ PO ₄ ) solution. SC1 is 40 degrees centigrade, SC2 is 50 degrees centigrade, and pure water is 40 degrees centigrade to 80 degrees centigrade. Further, the processing liquid used for processing in the substrate processing unit 20 is returned to the temperature control unit 10 via the return pipe 116. The returned processing liquid is adjusted to a temperature suitable for processing by the temperature control unit 10 and supplied to the substrate processing unit 20 so that the substrate processing unit 20 reuses the processing liquid. The temperature control unit 10 cools the processing liquid whose lifetime has elapsed due to continued reuse to a temperature at which the liquid can be discarded, and the cooled processing liquid is disposed in the factory via the waste liquid piping 61. It drains (discharges) to the factory waste liquid piping 200.

  The substrate processing unit 20 is a unit that processes a substrate. The substrate processing unit 20 may be of a single sheet type in which a processing liquid is discharged onto each of the substrates, or a batch type in which a plurality of substrates are collectively immersed in the processing liquid. May be. The substrate processing unit 20 is supplied with a processing liquid adjusted to a temperature suitable for processing from the temperature control unit 10 and stores the supplied processing liquid in a storage tank. The substrate processing unit 20 performs processing on the substrate using the processing liquid stored in the storage tank. In the substrate processing unit 20, the processing liquid is drained to the factory waste liquid pipe 200 via the waste liquid pipe 62 in the concentration control of the processing liquid, replacement of the processing liquid in the storage tank, and the like.

  The functional blocks of the substrate processing apparatus 100 will be described. FIG. 2 is an example of a functional block diagram of the substrate processing apparatus 100. The temperature control unit 10 and the substrate processing unit 20 described above are comprehensively controlled by the control unit 55. The configuration of the control unit 55 as hardware is the same as that of a general computer. That is, the control unit 55 stores a CPU 551 that performs various arithmetic processes, a ROM 552 that is a read-only memory that stores basic programs, a RAM 553 that is a readable / writable memory that stores various information, and control applications and data. A magnetic disk 554 to be placed is provided. In the present embodiment, the CPU 551 of the control unit 55 executes a predetermined program P, thereby executing temperature adjustment of the processing liquid, execution of processing on the substrate by the substrate processing unit, draining of the processing liquid, and the like. The program P is stored in the storage unit 57.

  Each configuration of the substrate processing apparatus 100 will be further described. The temperature control unit 10 includes a heating unit 11 that heats the processing liquid and a cooling unit 12 that cools the processing liquid. FIG. 3 is a diagram illustrating an outline of the internal structure of the heating unit 11. The heating unit 11 is a unit that heats the processing liquid to a temperature suitable for processing. In the heating unit 11, the processing liquid is stored in the tank 111. The internal pipe 112 has a first connection part 1121 connected to the bottom part (or the vicinity thereof) of the tank 111 and a second connection part 1122 connected to the upper part (for example, the upper wall part or the upper side wall part) of the tank 111. This is a pipe that forms a circulation flow path for returning the processing liquid sent from the tank 111 via the first connection part 1121 to the tank 111 via the second connection part 1122. A heating unit 113 and a thermometer 114 are interposed in the internal pipe 112, and the heating unit 113 is disposed on the first connection unit 1121 side of the thermometer 114.

The processing liquid stored in the tank 111 is sent to the internal pipe 112, and the sent processing liquid is heated by the heating unit 113. The temperature of the processing liquid heated by the heating unit 113 is measured by a thermometer 114 provided in the internal pipe 112 and returned to the tank 111. By such treatment liquid circulation, the treatment liquid stored in the tank 111 is adjusted to a temperature suitable for treatment. The supply pipe 115 includes the first connection part 1121 and the heating part 11 in the internal pipe 112.
3 is a pipe connected to the pipe 3 and a supply valve (not shown) is inserted. Delivery of the processing liquid to the supply pipe 115 is controlled by the supply valve. When the temperature of the processing liquid is adjusted to a temperature suitable for processing, the supply valve is opened. Thereby, the processing liquid stored in the tank 111 is sent to the substrate processing unit 20 through the supply pipe 115.

  The return pipe 116 is a pipe having one end connected to the substrate processing unit 20 and the other end connected to the upper portion (for example, the upper wall portion or the upper side wall portion) of the tank 111. The processing liquid used in the substrate processing unit 20 is returned to the tank 111 by the return pipe 116. The temperature of the processing liquid returned to the tank 111 via the return piping 116 is adjusted in the heating unit 11 and reused for processing. The waste liquid pipe 117 is a pipe that connects the bottom (or the vicinity thereof) of the tank 111 and the cooling unit 12. The processing liquid whose lifetime has elapsed due to repeated reuse is sent to the cooling unit 12 through the waste liquid pipe 117. The tank 111, the heating unit 113, and the thermometer 114 are accommodated in the housing 110, and a blocking member 1101 is provided on the inner wall of the housing 110. The heating unit 113 is an example of “supply means” and “heating means”.

  FIG. 4 is a diagram illustrating an example of a structure in the vicinity of the heating unit 113 of the heating unit 11. The heating unit 113 includes a plurality of halogen lamps 1131. Each of the plurality of halogen lamps 1131 is provided along the internal pipe 112. Each of the halogen lamps 1131 is arranged such that an emission surface 1132 that emits light and heat is directed to the internal pipe 112. When the halogen lamp 1131 releases heat from the emission surface 1132, the processing liquid flowing in the internal pipe 112 is heated. In the first embodiment, as shown in FIG. 4, a plurality of halogen lamps 1131 are provided at a plurality of locations inside the housing 110, but the present invention is not limited to this, and one housing 110 is provided inside the housing 110. A halogen lamp 1131 may be provided.

  If light or heat emitted from the halogen lamp 1131 leaks out of the heating unit 11, the environment in the factory where the substrate processing apparatus 100 is installed is changed. In order to stabilize the quality of processing performed by the substrate processing apparatus 100, the environment (temperature, humidity, etc.) in the factory is strictly managed. If the environment in the factory changes, the quality of the processing may deteriorate. Therefore, the inner wall of the casing 110 of the heating unit 11 is covered with a blocking member 1101 that blocks light and heat. The blocking member 1101 includes a heat insulating member that suppresses leakage of heat to the outside of the housing 110 and a light shielding member that suppresses leakage of light to the outside of the housing 110. The blocking member 1101 suppresses leakage of light and heat to the outside of the heating unit 11.

  By the way, the energy used for heating the processing liquid by the halogen lamp 1131 is, for example, about 95% of the light and heat emitted from the halogen lamp 1131, and the remaining 5% is a member other than the internal pipe 112 in the heating unit 11. Or the blocking member 1101 is heated. The halogen lamp 1131 is an example of “supplying means” and “heating means”. That the halogen lamp 1131 emits light or heat is an example of the “supplying step”. The casing 110 is an example of a “casing”. The blocking member 1101 is an example of “suppressing means”, “blocking member”, and “heat insulating material”.

  Therefore, for example, 5% of the light and heat emitted from the halogen lamp 1131 are not effectively utilized. Therefore, in the present embodiment, the blocking member 1101 is provided with a plurality of power generation units 118 that generate power based on heat and light. The power generation unit 118 includes a photovoltaic device 1181 and a thermoelectric generation device 1183. In the first embodiment, as shown in FIG. 4, a plurality of power generation units 118 are provided in a plurality of locations in the housing 110. However, the embodiment of the present invention is not limited to this, and one power generation unit 118 is provided in the housing 110. A power generation unit 118 may be provided.

The photovoltaic power generation device 1181 includes an emission surface 11 of the halogen lamp 1131 in the power generation unit 118.
32 has a light receiving surface 1182 that receives direct light or indirect light from the halogen lamp 1131 (light reflected or scattered by each part in the housing 110 such as the internal pipe 112). The photovoltaic device 1181 is a device that generates power using the photovoltaic effect of light incident on the light receiving surface 1182. The photovoltaic device 1181 is, for example, a silicon photovoltaic device, a compound photovoltaic device, an organic photovoltaic device, or the like. The thermoelectric generator 1183 has a heat receiving surface 1184 that receives heat from the halogen lamp 1131 and is provided on the opposite side of the emitting surface 1132 with the photovoltaic device 1181 interposed therebetween in the power generator 118. The thermoelectric generator 1183 is a device that generates electricity when the heat receiving surface 1184 receives heat. As the thermoelectric generator 1183, for example, a spin Seebeck heat exchange device or a Peltier element can be adopted.

  The power generation unit 118 is provided so that the light receiving surface 1182 and the heat receiving surface 1184 face the halogen lamp 1131 with the internal pipe 112 interposed therebetween. The power generation unit 118 generates power based on excess heat or light that was not used for heating the processing liquid flowing through the internal pipe 112. Since the photovoltaic device 1181 is arranged closer to the halogen lamp 1131 than the thermoelectric device 1183, light among the light and heat emitted from the halogen lamp 1131 easily reaches the photovoltaic device 1181 directly. Of the light and heat emitted from the halogen lamp 1131, heat can reach the thermoelectric generation device 1183 via the photovoltaic device 1181 and other portions of the power generation unit 118 by heat conduction or the like. For this reason, when the photovoltaic device 1181 and the thermoelectric generation device 1183 are arranged in this order, there is an effect that the power generation efficiency in the power generation unit 118 can be kept high. The power generation unit 118 is an example of “power generation means”. The photovoltaic device 1181 is an example of a “photovoltaic unit”. The thermoelectric generator 1183 is an example of a “thermoelectric generator unit”.

  The power generation unit 118 transmits the generated power to the power storage unit 119 included in the heating unit 11 via the transmission line 1186. The power storage unit 119 is means for storing electric power, and is, for example, a nickel metal hydride battery, a lithium ion battery, a lead storage battery, a sodium sulfur battery, or the like. The electric power stored in the power storage unit 119 is used to drive the temperature control unit 10. One end of the power transmission line 1186 is connected to the power storage unit 119, and the other end of the power transmission line 1186 is connected to one of the plurality of power generation units 118. The power transmission line 1186 includes a branching portion 1189 that branches into a plurality of lines in the middle of the power transmission line 1186. The plurality of other branches of the power transmission line 1186 are connected to the power generation unit 118 that is not connected to the other end of the power transmission line 1186 among the plurality of power generation units 118. Here, among the power transmission lines 1186, a line closer to the power storage unit 119 than the branch unit 1189 is referred to as a merged power transmission line 1187, and a line closer to the power generation unit 118 than the branch unit 1189 is referred to as a branch power transmission line 1188.

  Among the power transmission lines 1186, a wattmeter 1185 is provided in the vicinity of the other end of the power transmission line 1186 and each of the branch power transmission lines 1188 connected to the plurality of power generation units 118. The wattmeter 1185 measures the power generated by the power generation unit 118 and detects the presence or absence of the generated power. The measurement / detection operation by the wattmeter 1185 will be described later.

FIG. 5 is a diagram illustrating an example of the internal structure of the cooling unit 12 of the temperature control unit 10. Since the processing liquid used for the processing is heated by the heating unit 11 and becomes high temperature, it cannot be drained to the factory waste liquid piping 200 as it is. The cooling unit 12 is a unit that cools the processing liquid to a temperature at which the processing liquid can be drained before draining the processing liquid. The cooling unit 12 has an internal pipe 121 having one end connected to the waste liquid pipe 117 of the heating unit 11 and the other end connected to the waste liquid pipe 61. The processing liquid discharged in the heating unit 11 flows into the internal pipe 121 through the waste liquid pipe 117. A plurality of cooling units 122 are provided along the internal pipe 121 for the internal pipe 121 through which the processing liquid flows. Cold water circulates inside the cooling unit 122, and a cooling surface 1221 is provided on the surface of the cooling unit 122 for heat exchange between the cold water and the outside. Each of the plurality of cooling units 122 is arranged with the cooling surface 1221 facing the internal pipe 121 (or so that the cooling surface 1221 and the internal pipe 121 are in contact with each other). The cooling surface 1221 exchanges heat between the processing liquid in the internal pipe 121 and the cold water via the cooling surface 1221, whereby the processing liquid flowing in the internal pipe 121 is cooled.

  The processing liquid flowing in the internal pipe 121 is at a high temperature as described above. Therefore, the inner wall of the housing 120 of the cooling unit 12 is covered with the heat insulating material 1201 so that the heat of the processing liquid does not leak out of the cooling unit 12. The heat insulating material 1201 suppresses heat leakage to the outside of the housing 120. A thermal power generation device 123 is provided on the heat insulating material 1201. As the thermoelectric generator 123, for example, a spin Seebeck heat exchange device or a Peltier element can be adopted. The thermoelectric generator 123 can generate electric power by heat received from the processing liquid flowing in the internal pipe 121.

  The thermoelectric generation device 123 transmits the generated power to the power storage unit 129 via the transmission line 125. The power storage unit 129 is a unit that stores electric power in the same manner as the power storage unit 119 included in the heating unit 11, and is, for example, a nickel metal hydride battery, a lithium ion battery, a lead storage battery, or a sodium sulfur battery. The electric power stored in the power storage unit 129 is used to drive the temperature control unit 10. One end of the power transmission line 125 is connected to the power storage unit 129, and the other end of the power transmission line 125 is connected to one of the plurality of thermoelectric generation devices 123. The power transmission line 125 includes a branching unit 128 that branches into a plurality of lines in the middle of the power transmission line 125. Then, the plurality of branched other ends of the transmission line 125 are respectively connected to the thermoelectric generation devices 123 that are not connected to the other end of the transmission line 125 among the plurality of thermoelectric generation devices 123. Here, in the power transmission line 125, a line closer to the power storage unit 129 than the branch unit 128 is referred to as a merged power transmission line 126, and a line closer to the thermoelectric generation device 123 than the branch unit 128 is referred to as a branch power transmission line 127.

  Among the power transmission lines 125, a wattmeter 124 is provided in each of the branch power transmission lines 127 connected to the vicinity of the other end of the power transmission line 125 and the plurality of thermoelectric generation devices 123. The wattmeter 124 measures the power generated by the thermoelectric power generation device 123 and detects the presence or absence of the generated power. The measurement / detection operation by the wattmeter 124 will be described later.

  FIG. 6 is a flowchart for explaining an example of the substrate processing by the substrate processing apparatus 100, and shows processing realized mainly by the control unit 55 executing the program P. Hereinafter, the substrate processing operation by the substrate processing apparatus 100 will be described with reference to FIGS. 1 to 6 as appropriate.

  First, in the temperature control unit 10, the processing liquid is heated (supply step S1). More specifically, the heating unit 113 of the heating unit 11 operates according to an operation command from the control unit 55 and heats the processing liquid in the internal pipe 112. When the thermometer 114 detects that the temperature of the processing liquid has been adjusted to a temperature suitable for processing, the heated processing liquid is supplied from the temperature control unit 10 to the substrate processing unit 20 via the supply pipe 115. The Further, the processing liquid used for processing in the substrate processing unit 20 is returned from the substrate processing unit 20 to the temperature control unit 10 via the return pipe 116. The supply step S1 is an example of a “supply step”.

Subsequently, the suppression step S2 is executed. In the suppression step S <b> 2, leakage of heat and light emitted from each part to the outside of the temperature control unit 10 is suppressed. Specifically, the light emitted from the heating unit 113 in the supply step S1 is blocked by the light receiving surface 1182 and the blocking member 1101, and the heat released from the heating unit 113 is blocked by the heat receiving surface 1184 and the blocking member 1101 of the thermoelectric generator 1183. And the leakage of light and heat to the outside of the heating unit 11 is suppressed. Further, among the processing liquids heated in the supply step S1, the processing liquid whose lifetime has elapsed is cooled by the cooling unit 12 by passing through the internal pipe 121, and then the factory waste liquid pipe 20
Drained to zero. At that time, the heat released from the internal pipe 121 is blocked by the heat receiving surface 1231 of the thermoelectric generation device 123 included in the cooling unit 12, thereby suppressing the leakage of heat to the outside of the cooling unit 12. The suppression step S2 is an example of a “suppression step”.

  Subsequently, the power generation step S3 is executed. In the power generation step S3, the photovoltaic device 1181 and the thermoelectric generation devices 1183 and 123 generate power using the light and heat received by the light receiving surface 1182 and the heat receiving surfaces 1184 and 1231 in the suppression step S2. The power generation step S3 is an example of a “power generation step”.

  Subsequently, the detection step S4 is executed. In the detection step S4, the control unit 55 detects the power value measured by the wattmeters 1185 and 124. The wattmeters 1185 and 124 are examples of “detecting means”.

  Subsequently, determination step S5 is executed. In the determination step S5, the control unit 55 determines the operation state of the substrate processing apparatus 100 based on the power value detected in the detection step S4. For example, the range of the power generation amount when the heating unit 11 is operating normally (hereinafter referred to as the heating unit power generation range) is stored in the storage unit 57, and the power value that is the detection result of the wattmeter 1185 By comparing the heating unit power generation amount range, the control unit 55 determines whether or not an abnormality has occurred in the substrate processing apparatus 100 (for example, the heating unit 113).

  In addition, for example, the range of power generation when the cooling unit 12 is operating normally (hereinafter referred to as the cooling unit power generation range) is stored in the storage unit 57, and the power that is the detection result of the wattmeter 124 is stored. By comparing the value with the range of the cooling unit power generation amount range, the control unit 55 determines whether or not an abnormality has occurred in the substrate processing apparatus 100 (for example, the cooling unit 122). The control unit 55 that determines the operation state of the substrate processing apparatus 100 is an example of a “determination unit”. The keyboard 101 is an example of “input means”.

  Subsequently, notification step S6 is executed. In the notification step S6, when it is determined in the determination step S5 that an abnormality has occurred, the control unit 55 performs an abnormality notification using the buzzer 102 or the warning lamp 103. In the first embodiment, the execution of the notification step S6 is not essential, and the control step S7 described later may be executed as it is based on the result of the determination step S5. The buzzer 102 and the warning lamp 103 are examples of “notification means”.

  Subsequently, control step S7 is executed. In control step S7, control according to the determination result in determination step S5 is performed. For example, when the power value measured by the wattmeter 1185 is lower than the heating unit power generation amount range, the control unit 55 can determine that the heating by the halogen lamp 1131 is too weak. In such a case, the control unit 55 increases the amount of heat supplied to the processing liquid by the halogen lamp 1131 by increasing the output of the halogen lamp 1131 based on the determination result.

  In addition, for example, when the amount of power measured by the wattmeter 1185 exceeds the heating unit power generation amount range, the control unit 55 can determine that the heating by the halogen lamp 1131 is too strong. In such a case, the control unit 55 reduces the output of the halogen lamp 1131 or stops at least some of the halogen lamps 1131 based on the determination result, so that the amount of heat that the halogen lamp 1131 supplies to the processing liquid. Decrease. The controller 55 can reduce the power consumption of the heating unit 11, that is, the power consumption of the substrate processing apparatus 100, by reducing the output of the halogen lamp 1131 or stopping at least some of the halogen lamps 1131. it can.

For example, the control part 55 can determine with the cooling by the cooling part 122 being too weak, when the electric energy measured by the wattmeter 124 exceeds the cooling unit power generation amount range. In such a case, the control unit 55 promotes cooling of the processing liquid by increasing the flow rate of the cold water supplied to the cooling unit 122 or lowering the temperature of the cold water supplied to the cooling unit 122.

  For example, the control unit 55 can determine that the cooling by the cooling unit 122 is too strong when the power value measured by the wattmeter 124 is lower than the cooling unit power generation amount range. In such a case, the control unit 55 reduces the flow rate of the cold water supplied to the cooling unit 122, weakens the cooling of the cold water supplied to the cooling unit 122, or stops at least some of the cooling units 122. , Prevent the treatment liquid from being overcooled. The control unit 55 can reduce the power consumption of the cooling unit 12, that is, the power consumption of the substrate processing apparatus 100, by weakening the cooling of the cold water or stopping at least some of the cooling units 122.

  Further, for example, the control unit 55 may control the halogen lamp 1131 and the cooling unit 122 by a user who knows that an abnormality has occurred in the notification step S6 and inputs a control command via the keyboard 101. Good.

<Effects of First Embodiment>
In the first embodiment, in the heating unit 11 of the substrate processing apparatus 100, the photovoltaic device 1181 and the thermoelectric generation device 1183 generate power using thermal energy and optical energy that are not used for heating the processing liquid. The generated electric power is stored in the power storage unit 119 and used for driving the device. Therefore, energy saving of the substrate processing apparatus 100 is realized.

  In the first embodiment, in the cooling unit 12 of the substrate processing apparatus 100, the thermoelectric generator 123 generates power using the heat of the high temperature processing liquid. The generated electric power is stored in the power storage unit 129 and used for driving the device. Therefore, energy saving of the substrate processing apparatus 100 is realized.

  In the first embodiment, the generated power is measured by wattmeters 1185 and 124. The control unit 55 compares the power generation range when the apparatus is operating normally with the current values measured by the wattmeters 1185 and 124, thereby causing an abnormality in the temperature control unit 10 and the substrate processing unit 20. Can be detected. Furthermore, the control unit 55 can operate these in an appropriate temperature range by controlling the halogen lamp 1131 and the cooling unit 122 based on the determination results using the measurement results of the wattmeters 1185 and 124. Furthermore, since the control unit 55 performs notification by the buzzer 102 and the warning lamp 103 based on the determination result, it is possible to notify the operator of an abnormality in the substrate processing apparatus 100.

<First Modification>
In the first embodiment, in the heating unit 11, the power generation unit 118 is disposed in the housing 110. In the first modification, an example in which the power generation unit 118 is arranged outside the housing 110 will be described. FIG. 7 is a diagram illustrating an example of the heating unit 11a according to the first modification. In the heating unit 11a, the power generation unit 118 is disposed so as to be in contact with the outer wall of the housing 110. By arranging the power generation unit 118 in this way, the power generation unit 118 can generate power based on light and heat leaking outside the case 110 via the case 110. That is, the photovoltaic device 1181 of the power generation unit 118 can generate power using the received light while blocking the light leaking out of the housing 110 by the light receiving surface 1182. In addition, the thermoelectric generation device 1183 of the power generation unit 118 can generate power using the received heat while blocking heat leaking out of the housing 110 by the heat receiving surface 1184.

Since the processing liquid is heated, the inside of the housing 110 is likely to become high temperature, and some power generation units 118 are likely to have low power generation efficiency under a high temperature environment. By providing the power generation unit 118 outside the housing 110, the power generation unit 118 can be arranged in a lower temperature environment than in the housing 110. Therefore, even if the power generation unit 118 whose power generation efficiency decreases under a high temperature environment is used, the decrease in power generation efficiency is suppressed according to the first modification.

<Second Modification>
In the first embodiment, in the cooling unit 12, the processing liquid is cooled by arranging the cooling unit 122 along the internal pipe 121. In the second modified example, in the second modified example, a tank for storing the processing liquid to be cooled is provided in the cooling unit, and a cooling unit is provided in the tank.

  FIG. 8 is a diagram illustrating an example of the cooling unit 12a according to the second modification. FIG. 8 shows an example of the vicinity of the tank 1202 of the cooling unit 12a. A waste liquid pipe 117 from the heating unit 11 is connected to an upper portion (for example, an upper wall portion or an upper side wall portion) of the tank 1202. In addition, an internal pipe 121 is connected to the bottom (or the vicinity thereof) of the tank 1202. In the tank 1202, the cooling part 122a is immersed in the processing liquid stored.

  As with the cooling unit 122, the cooling unit 122 a circulates cold water therein. The outer surface of the cooling unit 122a is a cooling surface 1221 that exchanges heat with the processing liquid in the tank 1202. The cooling part 122a is formed to provide a plurality of protrusions. Thereby, rather than forming the cooling part 122a in a linear shape, the area for heat exchange between the processing liquid in the tank 1202 and the cooling water can be increased, and the cooling efficiency by the cooling part 122a can be increased. The cooling unit 122a is not limited to a shape having a plurality of protrusions, and other shapes (for example, a spiral shape or a spiral shape) may be employed.

  A plurality of thermoelectric generation devices 123 a are provided outside the outer wall 1203 of the tank 1202. Thermoelectric power generation device 123 a is disposed such that heat receiving surface 1231 a contacts outer wall 1203 of tank 1202. By arranging the thermoelectric generation device 123a in this way, the thermoelectric generation device 123a can suppress heat leaking out of the tank 1202 via the outer wall 1203 of the tank 1202. In addition, the thermoelectric generation device 123a can perform thermoelectric generation by receiving the leaked heat at the heat receiving surface 1231a.

<Third Modification>
In the first embodiment, in the heating unit 11, the power generation unit 118 is disposed in a partial region of the blocking member 1101, but the power generation unit 118 may be disposed on the entire inner surface of the blocking member 1101. Further, in the first embodiment, in the cooling unit 12, the thermoelectric generation device 123 is arranged in a partial region of the heat insulating material 1201, but the thermoelectric generation device 123 may be arranged on the entire inner surface of the heat insulating material 1201. Good.

<Fourth Modification>
In the first embodiment, both the photovoltaic device 1181 and the thermoelectric generation device 1183 are provided in the heating unit 11, but either one of the photovoltaic device 1181 or the thermoelectric generation device 1183 may be provided.

Second Embodiment
In the first embodiment, power generation is performed using heating of the processing liquid and heat of the processing liquid. In the second embodiment, a configuration in which power is generated using heat in the heat treatment for the substrate will be described. The same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted. Hereinafter, a second embodiment will be described with reference to the drawings.

FIG. 9 is a diagram illustrating an example of the heat treatment unit 21 according to the second embodiment. The processing for the substrate W in the substrate processing unit 20 may include heat treatment by the heat treatment unit 21. For example, when removing the resist film from the surface of the substrate W, the heat treatment unit 21 discharges the SPM supplied from the temperature control unit 10 via the supply pipe 115 to the surface of the substrate W, thereby Heat the top SPM. The resist is removed from the surface of the substrate W by the strong oxidizing power of perchisosulfuric acid (H ₂ SO ₅ ) contained in the SPM. The heat processing unit 21 is disposed in the substrate processing unit 20 and performs heat processing on the substrate W. The heat processing unit 21 includes a table 22 on which the substrate W is placed, an infrared lamp 23 that heats the substrate W placed on the table 22 from above, and a discharge nozzle 24 that ejects SPM onto the substrate W. Housed inside. The heat treatment unit 21 is further provided with a heat insulating material 211 on the inner wall of the casing 210 in order to suppress leakage of heat from the infrared lamp 23 to the outside of the heat treatment unit 21. The infrared lamp 23 is an example of a “supplying unit”.

  In the heat treatment unit 21, the thermoelectric generation device 25 is provided on the heat insulating material 211. The thermoelectric generator 25 is provided on the heat insulating material 211 at a position where the infrared ray emitted from the infrared lamp 23 can be received by the heat receiving surface 251. That is, in the heat treatment unit 21, the thermoelectric generator 25 generates electric power based on excess heat that was not used for heating the substrate W. In the heat processing unit 21, the thermoelectric generation device 25 transmits the generated power to the power storage unit 257 included in the heat processing unit 21, and the power storage unit 257 stores the transmitted power. The electric power stored in the power storage unit 257 is used to drive the substrate processing unit 20. One end of the power transmission line 253 is connected to the power storage unit 257, and the other end of the power transmission line 253 is connected to one of the plurality of thermoelectric generation devices 25. The power transmission line 253 includes a branching unit 256 that branches into a plurality of lines in the middle of the power transmission line 253. The plurality of other branched branches of the power transmission line 253 are connected to the thermoelectric generation devices 25 that are not connected to the other end of the power transmission line 253 among the plurality of thermoelectric generation devices 25. Here, in the power transmission line 253, a line closer to the power storage unit 257 than the branch unit 256 is referred to as a merged power transmission line 254, and a line closer to the thermoelectric generation device 25 than the branch unit 256 is referred to as a branch power transmission line 255.

  Among the power transmission lines 253, a wattmeter 252 is provided in the vicinity of the other end of the power transmission line 253 and in each of the branch power transmission lines 255 connected to the plurality of thermoelectric generation devices 25. The wattmeter 252 measures the power generated by the thermoelectric power generation device 25 and detects the presence or absence of the generated power. The measurement / detection operation by the wattmeter 252 will be described later.

  The substrate processing by the heat processing unit 21 according to the second embodiment having the above-described configuration will be described with reference to FIG.

  In the supply step S1, the SPM that is the processing liquid is heated. More specifically, the heating unit 113 of the heating unit 11 operates according to an operation command from the control unit 55 and heats the processing liquid in the internal pipe 112. When the thermometer 114 detects that the temperature of the processing liquid has been adjusted to a temperature suitable for processing, the heated processing liquid is heated from the temperature control unit 10 to the substrate processing unit 20 via the supply pipe 115. Supplied to the unit 21. In the heat treatment unit 21, SPM that is a treatment liquid is ejected from the ejection nozzle 24 to the substrate W.

  When the infrared lamp 23 heats the substrate W, the SPM on the substrate W is heated, and the resist film is removed from the surface of the substrate W. Further, the processing liquid used for processing in the heat processing unit 21 is returned from the substrate processing unit 20 to the temperature control unit 10 via the return pipe 116. The process in which the heating unit 113 in the supply step S1 heats the processing liquid in the internal pipe 112 and the process in which the infrared lamp 23 heats the substrate W are examples of the “supply step”.

  In suppression step S <b> 2, leakage of heat released from the infrared lamp 23 to the outside of the heat treatment unit 21 is suppressed. Specifically, the heat released from the infrared lamp 23 in the supply step S <b> 1 is blocked by the heat receiving surface 251 and the heat insulating material 2101 of the thermoelectric generation device 25, thereby suppressing heat leakage to the outside of the heat treatment unit 21. The suppression step S2 is an example of a “suppression step”.

  In the power generation step S3, the thermoelectric generation device 25 generates power using the heat received by the heat receiving surface 251 in the suppression step S2. The power generation step S3 is an example of a “power generation step”.

  In the detection step S4, the control unit 55 detects the power value measured by the wattmeter 252.

  In the determination step S5, the control unit 55 determines the operation state of the substrate processing apparatus 100 based on the power value that is the detection result detected in the detection step S4. For example, the range of power generation when the heat treatment unit 21 is operating normally (hereinafter referred to as the heat treatment power generation range) is stored in the storage unit 57 and the power value that is the detection result of the wattmeter 252 is stored. And the heat treatment power generation amount range, the control unit 55 determines whether or not an abnormality has occurred in the substrate processing apparatus 100.

  For example, when the current value measured by the wattmeter 252 is higher than the heat treatment power generation amount range, the control unit 55 can determine that the heating by the infrared lamp 23 is too strong. In such a case, the control unit 55 reduces the output of the infrared lamp 23 or stops at least a part of the infrared lamp 23 based on the determination result, so that the amount of heat that the infrared lamp 23 supplies to the substrate W. Decrease. The controller 55 reduces the power consumption of the heat treatment unit 21, that is, the power consumption of the substrate processing apparatus 100, by reducing the output of the infrared lamp 23 or stopping at least some of the infrared lamps 23. Can do.

  For example, the control unit 55 can determine that the heating by the infrared lamp 23 is too weak when the current value measured by the wattmeter 252 is lower than the heat treatment power generation amount range. In such a case, the control unit 55 increases the amount of heat that the infrared lamp 23 supplies to the substrate W by increasing the output of the infrared lamp 23 based on the determination result.

<Effects of Second Embodiment>
In the second embodiment, in the heat treatment unit 21 of the substrate processing apparatus 100, the thermoelectric generator 25 generates power using thermal energy that has not been used for heating the substrate W. The generated electric power is stored in the power storage unit 257 and used for driving the device. Therefore, similarly to the first embodiment, energy saving of the substrate processing apparatus 100 is realized also in the second embodiment.

  In the second embodiment, the generated electric power is measured by the wattmeter 252. The control unit 55 can detect that an abnormality has occurred in the heat treatment unit 21 by comparing the range of power generation when the apparatus is operating normally and the current value measured by the wattmeter 252. . Furthermore, the control part 55 can operate the infrared lamp 23 in a suitable temperature range by controlling the infrared lamp 23 based on the determination result using the measurement result of the wattmeter 252. Furthermore, since the control unit 55 performs notification by the buzzer 102 and the warning lamp 103 based on the determination result, it is possible to notify the operator of an abnormality in the substrate processing apparatus 100.

<Fifth Modification>
In the first embodiment, the power generated by the heating unit 11 is stored in the power storage unit 119 in the heating unit 11, and the power generated in the cooling unit 12 is stored in the power storage unit 129 in the cooling unit 12. In the second embodiment, the electric power generated by the heat processing unit 21 of the substrate processing unit 20 is stored in the power storage unit 257 in the heat processing unit 21. However, the generated power may be stored other than the power storage units 119, 129, and 257. FIG. 10 is a diagram illustrating an example of a configuration according to a fifth modification in which the power storage unit 30 is provided outside the temperature control unit 10 and the substrate processing unit 20. The power storage unit 30 is a unit that stores power, and is, for example, a nickel metal hydride battery, a lithium ion battery, a lead storage battery, a sodium sulfur battery, or the like. The temperature control unit 10, the substrate processing unit 20, and the power storage unit 30 are electrically connected by a power transmission line 72. The electric power generated by the temperature control unit 10 and the substrate processing unit 20 may be transmitted to the power storage unit 30 via the power transmission line 72, and the power storage unit 30 may store the transmitted power. The electric power stored in the power storage unit 30 can be used for driving the temperature control unit 10 and the substrate processing unit 20, for example.

<Sixth Modification>
In the second embodiment, the power storage unit 257 is disposed in the housing 210. However, the power storage unit 257 is not limited to the configuration disposed in the housing 210 and may be disposed outside the housing 210. FIG. 11 is a diagram illustrating an example of the heat treatment unit 21a according to the sixth modification. The heat processing unit 21a is different from the heat processing unit 21 according to the second embodiment in that the power storage unit 257 is disposed outside the housing 210. The atmosphere in the housing 210 includes components of the processing liquid. By disposing the power storage unit 257 outside the housing 210, it is possible to suppress the influence on the power storage unit 257 due to the constituent components of the processing liquid contained in the atmosphere.

DESCRIPTION OF SYMBOLS 100 ... Substrate processing apparatus 10 ... Temperature control unit 11 ... Heating unit 110, 120, 210 ... Case 12 ... Cooling unit 112, 121 ... Internal piping 1131 ... Halogen Lamp 1132... Emission surface 1101... Blocking member 118... Power generation unit 1181... Photoelectric power generation device 1182... Light reception surface 1183, 123, 123 a, 25. , 251 ... Heat-receiving surface 1185, 124, 252 ... Power meter 119, 129, 257 ... Power storage unit 1186, 125, 253, 72 ... Transmission line 1187, 126, 254 ... Merged transmission line 1188, 127, 255... Branching transmission line 1189, 128, 256... Branching part 122, 122 a. DESCRIPTION OF SYMBOLS 1, 2101 ... Heat insulating material 1221 ... Cooling surface 20 ... Substrate processing unit 21 ... Heat processing unit 22 ... Table 23 ... Infrared lamp 24 ... Discharge nozzle 30 ... Power storage Unit 55 ... Control unit 57 ... Storage unit 61, 62 ... Waste liquid pipe 81 ... Supply pipe 82 ... Return pipe 111,1202 ... Tank 114 ... Thermometer 115 ... Supply pipe 116 ... Return pipe 117 ... Waste liquid pipe 200 ... Factory waste liquid pipe F ... Floor W ... Substrate

Claims (11)

A substrate processing apparatus that performs predetermined processing on a substrate using a predetermined processing liquid,
Supply means for supplying light or heat used for the predetermined processing;
A housing that houses the supply means;
Suppression means for suppressing leakage of the light or the heat to the outside of the housing,
The suppression means is provided with a power generation means for generating electric power based on at least one of the light and the heat received from the supply means,
Substrate processing equipment. The supply means includes a heating means for heating the treatment liquid,
The suppression means includes a blocking member that suppresses leakage of light or heat supplied by the heating means to the outside of the housing,
The substrate processing apparatus according to claim 1. It further comprises detection means for detecting the presence or absence of power generation by the power generation means or the amount of power generation.
The substrate processing apparatus according to claim 1 or 2. A determination unit that determines whether an abnormality has occurred in the supply unit based on a detection result of the detection unit;
The substrate processing apparatus according to claim 3. A control unit for controlling the supply unit based on a determination result by the determination unit;
The substrate processing apparatus according to claim 4. Notification means for notifying the determination result by the determination means;
Input means for receiving an input of a control command for controlling the supply means from the user,
The control unit causes the notification unit to perform abnormality notification when the determination unit determines that an abnormality has occurred in the supply unit, and after the abnormality notification, according to the control command received by the input unit Controlling the supply means,
The substrate processing apparatus according to claim 5. The supply means supplies at least light;
The suppression means suppresses leakage of the light out of the housing,
The power generation means includes a photovoltaic unit that receives the light and generates power,
The substrate processing apparatus according to any one of claims 1 to 6. The supply means further supplies heat,
The power generation means further includes a thermoelectric generator unit that receives the heat and generates electric power,
The photovoltaic unit is disposed closer to the supply means than the thermoelectric generator unit.
The substrate processing apparatus according to claim 7. The power generated by the power generation means is used to drive the substrate processing apparatus.
The substrate processing apparatus according to claim 1. A power storage unit for storing the power generated by the power generation means;
The substrate processing apparatus according to claim 1. A substrate processing method executed by a substrate processing apparatus that performs predetermined processing on a substrate using a predetermined processing liquid,
A supply step for supplying light or heat;
A suppressing step of suppressing leakage of the light or the heat to the outside of the substrate processing apparatus;
A power generation step of generating electricity using the light or the heat that has suppressed leakage in the suppression step,
Substrate processing method.

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