TWI711104B - 加熱器區塊及利用所述加熱器區塊的基板熱處理裝置 - Google Patents
加熱器區塊及利用所述加熱器區塊的基板熱處理裝置 Download PDFInfo
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- TWI711104B TWI711104B TW104117449A TW104117449A TWI711104B TW I711104 B TWI711104 B TW I711104B TW 104117449 A TW104117449 A TW 104117449A TW 104117449 A TW104117449 A TW 104117449A TW I711104 B TWI711104 B TW I711104B
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- 239000000758 substrate Substances 0.000 title claims abstract description 289
- 238000010438 heat treatment Methods 0.000 title claims abstract description 64
- 238000012545 processing Methods 0.000 claims description 18
- 238000012546 transfer Methods 0.000 abstract description 10
- 239000011521 glass Substances 0.000 description 118
- 238000009826 distribution Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 9
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052736 halogen Inorganic materials 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- -1 tungsten halogen Chemical class 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 2
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Furnace Details (AREA)
- Control Of Resistance Heating (AREA)
- Resistance Heating (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2014-0065147 | 2014-05-29 | ||
KR1020140065147A KR101809141B1 (ko) | 2014-05-29 | 2014-05-29 | 히터 블록 및 기판 열처리 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201545260A TW201545260A (zh) | 2015-12-01 |
TWI711104B true TWI711104B (zh) | 2020-11-21 |
Family
ID=54725455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104117449A TWI711104B (zh) | 2014-05-29 | 2015-05-29 | 加熱器區塊及利用所述加熱器區塊的基板熱處理裝置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6545532B2 (ja) |
KR (1) | KR101809141B1 (ja) |
CN (1) | CN105140153B (ja) |
TW (1) | TWI711104B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106353909A (zh) * | 2016-11-28 | 2017-01-25 | 深圳市华星光电技术有限公司 | 加热板和烘烤装置 |
KR102161165B1 (ko) | 2018-05-18 | 2020-09-29 | 에이피시스템 주식회사 | 히터 블록, 열 처리 장치 및 방법 |
CN114026268A (zh) * | 2019-06-25 | 2022-02-08 | 皮考逊公司 | 衬底背面保护 |
WO2023206463A1 (zh) * | 2022-04-29 | 2023-11-02 | 京东方科技集团股份有限公司 | 阵列基板和显示面板 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100496170C (zh) * | 1999-11-30 | 2009-06-03 | 松下电器产业株式会社 | 红外线灯、加热装置和生产红外线灯的方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2940047B2 (ja) * | 1989-02-14 | 1999-08-25 | 株式会社日本自動車部品総合研究所 | 熱処理装置および熱処理方法 |
JPH10223549A (ja) * | 1997-02-07 | 1998-08-21 | Citizen Watch Co Ltd | ランプアニール装置 |
JP2000068222A (ja) | 1998-08-21 | 2000-03-03 | Dainippon Screen Mfg Co Ltd | 基板熱処理装置 |
JP4146558B2 (ja) | 1998-12-07 | 2008-09-10 | 大日本スクリーン製造株式会社 | 基板熱処理方法および基板熱処理装置 |
JP3996717B2 (ja) | 1998-12-22 | 2007-10-24 | 大日本スクリーン製造株式会社 | 基板熱処理装置 |
JP3659863B2 (ja) * | 2000-04-06 | 2005-06-15 | 大日本スクリーン製造株式会社 | 熱処理装置 |
FR2815395B1 (fr) * | 2000-10-13 | 2004-06-18 | Joint Industrial Processors For Electronics | Dispositif de chauffage rapide et uniforme d'un substrat par rayonnement infrarouge |
JP2002289547A (ja) * | 2001-03-28 | 2002-10-04 | Dainippon Screen Mfg Co Ltd | 熱処理装置 |
JP4429609B2 (ja) | 2002-06-25 | 2010-03-10 | 大日本スクリーン製造株式会社 | 熱処理装置 |
US6818864B2 (en) * | 2002-08-09 | 2004-11-16 | Asm America, Inc. | LED heat lamp arrays for CVD heating |
JP2005072045A (ja) * | 2003-08-26 | 2005-03-17 | Toshiba Corp | 半導体装置およびその製造方法 |
KR20050040591A (ko) * | 2003-10-29 | 2005-05-03 | 동부아남반도체 주식회사 | 반도체 급속열처리 장치 및 급속열처리 방법 |
JP4024764B2 (ja) * | 2004-01-20 | 2007-12-19 | 松下電器産業株式会社 | 光照射熱処理方法および光照射熱処理装置 |
JP4757217B2 (ja) * | 2007-03-09 | 2011-08-24 | 東京エレクトロン株式会社 | 基板処理装置 |
CN103515177A (zh) * | 2012-06-20 | 2014-01-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室、基片加工设备及其温度控制方法 |
CN102913786A (zh) * | 2012-09-24 | 2013-02-06 | 苏州晶品光电科技有限公司 | 一种近全方位发光的led片式光源 |
JP2015088749A (ja) * | 2013-10-28 | 2015-05-07 | エーピー システムズ インコーポレイテッド | 基板処理装置 |
-
2014
- 2014-05-29 KR KR1020140065147A patent/KR101809141B1/ko active IP Right Grant
-
2015
- 2015-05-29 TW TW104117449A patent/TWI711104B/zh not_active IP Right Cessation
- 2015-05-29 CN CN201510289357.0A patent/CN105140153B/zh not_active Expired - Fee Related
- 2015-05-29 JP JP2015109856A patent/JP6545532B2/ja not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100496170C (zh) * | 1999-11-30 | 2009-06-03 | 松下电器产业株式会社 | 红外线灯、加热装置和生产红外线灯的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN105140153B (zh) | 2019-09-17 |
JP2015226069A (ja) | 2015-12-14 |
TW201545260A (zh) | 2015-12-01 |
KR20150138496A (ko) | 2015-12-10 |
KR101809141B1 (ko) | 2018-01-19 |
CN105140153A (zh) | 2015-12-09 |
JP6545532B2 (ja) | 2019-07-17 |
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MM4A | Annulment or lapse of patent due to non-payment of fees |