TWI711104B - Heater block and substrate heat treatment apparatus using same - Google Patents
Heater block and substrate heat treatment apparatus using same Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 289
- 238000010438 heat treatment Methods 0.000 title claims abstract description 64
- 238000012545 processing Methods 0.000 claims description 18
- 238000012546 transfer Methods 0.000 abstract description 10
- 239000011521 glass Substances 0.000 description 118
- 238000009826 distribution Methods 0.000 description 16
- 238000000034 method Methods 0.000 description 9
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052736 halogen Inorganic materials 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- -1 tungsten halogen Chemical class 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 2
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/0033—Heating devices using lamps
- H05B3/0038—Heating devices using lamps for industrial applications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
Description
本發明是有關於一種加熱器區塊以及一種基板熱處理裝置,且更具體而言,是有關於一種對基板執行熱處理的加熱器區塊以及一種使用所述加熱器區塊的基板熱處理裝置。 The present invention relates to a heater block and a substrate heat treatment device, and more specifically, to a heater block that performs heat treatment on a substrate and a substrate heat treatment device using the heater block.
熱處理是半導體製程中的基本製程。舉例而言,歐姆接點合金化(ohmic contact alloying)、離子植入損傷退火(ion implantation damage annealing)、摻雜劑活化(dopant activation)及例如TiN、TiSi2、CoCi2等薄膜的形成是需要進行熱處理的製程。 Heat treatment is the basic process in the semiconductor manufacturing process. For example, ohmic contact alloying, ion implantation damage annealing, dopant activation, and the formation of thin films such as TiN, TiSi2, CoCi2, etc. require heat treatment The manufacturing process.
熔爐及快速熱加工(rapid thermal processing,RTP)裝置是執行熱處理的裝置。快速熱加工(RTP)裝置並未受到高度關注,這是因為在均勻地保持基板的整體溫度、使所更換的另一基板也保持相同的溫度-時間特性、以及精確地測量並控制基板溫度方面存在困難。然而,隨著RTP裝置的溫度測量技術及溫度控制 技術的逐步發展,近來RTP裝置已取代了熔爐。 Furnace and rapid thermal processing (rapid thermal processing, RTP) devices are devices that perform heat treatment. Rapid thermal processing (RTP) devices have not received high attention, because they maintain the overall temperature of the substrate uniformly, maintain the same temperature-time characteristics of the replaced substrate, and accurately measure and control the substrate temperature There are difficulties. However, with the temperature measurement technology and temperature control of RTP devices With the gradual development of technology, RTP devices have recently replaced furnaces.
RTP裝置利用鎢鹵素燈(tungsten halogen lamp)的輻射光將熱量傳遞至基板。因此,RTP裝置包括加熱器區塊及多個鎢鹵素燈,所述多個鎢鹵素燈位於加熱器區塊的各側面中面對所述基板的側面處。 The RTP device uses the radiant light of a tungsten halogen lamp to transfer heat to the substrate. Therefore, the RTP device includes a heater block and a plurality of tungsten halogen lamps, and the plurality of tungsten halogen lamps are located at the side surface facing the substrate among the side surfaces of the heater block.
即使使用RTP裝置對基板進行熱處理,仍需要均勻地保持基板的整體溫度。這是因為基板的溫度不均勻會導致例如基板翹曲及錯位(dislocation)以及薄膜滑動(slip)等嚴重問題。為解決基板溫度不均勻的問題,需要一種用於精確地測量並控制基板溫度的技術以及一種用於將均勻熱量傳遞至基板的整個區域的技術。 Even if the RTP device is used to heat the substrate, the overall temperature of the substrate still needs to be maintained uniformly. This is because the uneven temperature of the substrate can cause serious problems such as substrate warpage and dislocation, and film slip. To solve the problem of uneven substrate temperature, a technique for accurately measuring and controlling the substrate temperature and a technique for transferring uniform heat to the entire area of the substrate are required.
用於將均勻熱量傳遞至基板的整個區域的技術是有關於對鎢鹵素燈的排列。因此,與鎢鹵素燈的排列相關的多種技術已為人們所知。 The technique used to transfer uniform heat to the entire area of the substrate is related to the arrangement of tungsten halogen lamps. Therefore, many technologies related to the arrangement of tungsten halogen lamps have been known.
在如圖1所示用於對小半導體基板(例如晶圓)進行熱處理的燈排列的情形中,燈泡在燈安裝表面上被排列成圓形。這是為了通過將小燈泡排列成對應的圓形(因為半導體基板(晶圓)具有圓形形狀)來對半導體基板的全部區執行均勻熱處理。在半導體的熱處理裝置中,集成的小燈泡被排列成對應於半導體基板(晶圓)的形狀,從而可通過二維補償方法對晶圓的邊緣(邊界)區執行熱補償(thermal compensation)。因此,可易於確保熱均勻性。 In the case of a lamp arrangement for heat treatment of a small semiconductor substrate (for example, a wafer) as shown in FIG. 1, the bulbs are arranged in a circle on the lamp mounting surface. This is to perform uniform heat treatment on the entire area of the semiconductor substrate by arranging the small bulbs into a corresponding circle (because the semiconductor substrate (wafer) has a circular shape). In the semiconductor heat treatment device, the integrated small bulbs are arranged to correspond to the shape of the semiconductor substrate (wafer), so that thermal compensation can be performed on the edge (boundary) area of the wafer by a two-dimensional compensation method. Therefore, thermal uniformity can be easily ensured.
相反地,用於對顯示裝置所使用的大玻璃基板進行熱處理的燈排列則如圖2所示利用大的線性燈(linear lamp)形成線性排列。這是為了通過將燈排列成對應的線性形狀(因為玻璃基板具有矩形形狀)來對玻璃基板的全部區執行均勻熱處理。因此,在玻璃基板的熱處理裝置的燈排列的形狀方面,慮及玻璃的尺寸來確定線性燈的長度及排列數目。 On the contrary, the lamp arrangement for heat-treating the large glass substrate used in the display device uses a large linear lamp to form a linear arrangement as shown in FIG. 2. This is to perform uniform heat treatment on the entire area of the glass substrate by arranging the lamps into a corresponding linear shape (because the glass substrate has a rectangular shape). Therefore, in terms of the shape of the lamp arrangement of the heat treatment device for the glass substrate, the length and the number of the arrangement of the linear lamps are determined in consideration of the size of the glass.
同時,此線性燈在單一方向上具有輸入自由度(input degree of freedom)。因此,應通過一維補償方法來對玻璃的邊緣區進行熱補償。當通過一維補償方法執行熱補償時,存在以下限制:玻璃的整個區域的熱均勻性的增強有限。亦即,在線性燈的情形中,由於所述燈應在一個方向上排列,因此存在僅在一個方向上執行補償的一維補償限制。 At the same time, the linear lamp has an input degree of freedom in a single direction. Therefore, a one-dimensional compensation method should be used to thermally compensate the edge area of the glass. When thermal compensation is performed by the one-dimensional compensation method, there is the following limitation: the enhancement of thermal uniformity of the entire area of the glass is limited. That is, in the case of a linear lamp, since the lamps should be arranged in one direction, there is a one-dimensional compensation limitation in which compensation is performed only in one direction.
此外,當玻璃基板的熱處理裝置的燈是利用小燈泡進行排列時,由於需要過多燈泡,因而存在玻璃基板的熱處理裝置的製造成本會增加的限制。 In addition, when the lamps of the heat treatment apparatus for glass substrates are arranged using small bulbs, since too many bulbs are required, there is a limitation that the manufacturing cost of the heat treatment apparatus for glass substrates may increase.
[專利文獻1]韓國專利第1031226號 [Patent Document 1] Korean Patent No. 1031226
本發明提供一種能夠在對矩形基板進行熱處理時確保熱均勻性的加熱器區塊。本發明還對適用於二維補償的燈進行排列 以在對矩形基板進行熱處理時確保熱均勻性。 The present invention provides a heater block capable of ensuring thermal uniformity when performing heat treatment on a rectangular substrate. The invention also arranges lamps suitable for two-dimensional compensation To ensure thermal uniformity when the rectangular substrate is heat-treated.
根據示例性實施例,一種加熱器區塊包括加熱燈,所述加熱燈用以將熱量傳遞至包括具有不同長度的短邊與長邊的矩形基板,所述加熱燈包括多個燈泡,其中所述燈泡被排列成使平行於所述矩形基板的所述短邊安置的所述燈泡的數目與平行於所述矩形基板的所述長邊安置的所述燈泡的數目彼此相同。 According to an exemplary embodiment, a heater block includes a heater lamp for transferring heat to a rectangular substrate including short sides and long sides with different lengths, the heater lamp includes a plurality of bulbs, wherein The bulbs are arranged so that the number of the bulbs arranged parallel to the short side of the rectangular substrate and the number of the bulbs arranged parallel to the long side of the rectangular substrate are the same as each other.
當所述燈泡的短邊:長邊排列比率是平行於所述矩形基板的所述短邊安置的所述燈泡之間的間隔對平行於所述矩形基板的所述長邊安置的所述燈泡之間的間隔的比率時,所述燈泡的所述短邊:長邊排列比率可被確定成使在平行於所述矩形基板的所述短邊的方向上安置的燈泡數目與在平行於所述矩形基板的長邊的方向上安置的燈泡數目彼此相同。 When the short side of the bulb: the long side arrangement ratio is the interval between the bulbs arranged parallel to the short side of the rectangular substrate versus the bulbs arranged parallel to the long side of the rectangular substrate The short-side: long-side arrangement ratio of the bulb can be determined such that the number of bulbs arranged in a direction parallel to the short side of the rectangular substrate and the The number of bulbs arranged in the direction of the long sides of the rectangular substrate is the same as each other.
當所述矩形基板的所述短邊的長度與所述長邊的長度的比率是所述矩形基板的短邊:長邊基板比率時,所述燈泡可被排列成線性形狀,且可根據所述矩形基板的短邊:長邊基板比率確定所述燈泡的所述短邊:長邊排列比率。 When the ratio of the length of the short side of the rectangular substrate to the length of the long side is the ratio of the short side of the rectangular substrate: the long side substrate, the bulbs can be arranged in a linear shape, and can be arranged according to the The short side: long side substrate ratio of the rectangular substrate determines the short side: long side arrangement ratio of the bulb.
所述燈泡的所述短邊:長邊排列比率可被確定為與所述矩形基板的所述短邊:長邊基板比率相同的值。 The short side: long side arrangement ratio of the bulb may be determined to be the same value as the short side: long side substrate ratio of the rectangular substrate.
當欲被熱處理的所述多個矩形基板的所述短邊:長邊基板比率互不相同時,所述燈泡的所述短邊:長邊排列比率可被確定為所述多個矩形基板的所述短邊:長邊基板比率的平均值。 When the short-side: long-side substrate ratios of the plurality of rectangular substrates to be heat-treated are different from each other, the short-side: long-side arrangement ratio of the bulb may be determined as the ratio of the plurality of rectangular substrates The short side: the average value of the substrate ratio on the long side.
所述燈泡的所述短邊:長邊排列比率可具有處於約1:1.14 至約1:1.35範圍內的任一排列比率。 The short side: long side arrangement ratio of the bulb may have a ratio of about 1:1.14 Any arrangement ratio within the range of about 1:1.35.
根據另一示例性實施例,一種加熱器區塊包括加熱燈,所述加熱燈用以將熱量傳遞至包括具有不同長度的短邊與長邊的矩形基板,所述加熱燈包括多個燈泡,其中所述多個燈泡分別平行於所述矩形基板的所述短邊及所述長邊安置,且平行於所述矩形基板的所述短邊的所述燈泡被排列成位於自平行於所述矩形基板的所述長邊的所述燈泡之間的中心點平行於所述短邊延伸的延伸線上。 According to another exemplary embodiment, a heater block includes a heater lamp for transferring heat to a rectangular substrate having short and long sides with different lengths, the heater lamp includes a plurality of bulbs, The plurality of bulbs are respectively arranged parallel to the short side and the long side of the rectangular substrate, and the bulbs parallel to the short side of the rectangular substrate are arranged so as to be self-parallel to the The center point between the bulbs on the long side of the rectangular substrate is parallel to an extension line on which the short side extends.
當平行於矩形基板的所述長邊排列的兩個燈泡的中心點之間的間隙為底邊、且自所述兩個燈泡之間的中心點至在平行於所述短邊的方向上位置最鄰近的燈泡的中心點的距離為高度時,所述燈泡可被排列成使底邊:高度比率為1.5:1。 When the gap between the center points of the two bulbs arranged parallel to the long side of the rectangular substrate is the bottom side, and from the center point between the two bulbs to the position in the direction parallel to the short side When the distance between the center points of the nearest bulbs is the height, the bulbs can be arranged so that the bottom edge: height ratio is 1.5:1.
根據再一示例性實施例,一種加熱器區塊包括加熱燈,所述加熱燈用以將熱量傳遞至包括具有不同長度的短邊與長邊的矩形基板,所述加熱燈包括多個燈泡,其中所述多個燈泡分別平行於所述矩形基板的所述短邊及所述長邊安置,且平行於所述矩形基板的所述長邊的所述燈泡被排列成位於自平行於所述矩形基板的所述短邊的所述燈泡之間的中心點平行於所述長邊延伸的延伸線上。 According to still another exemplary embodiment, a heater block includes a heater lamp for transferring heat to a rectangular substrate including short and long sides with different lengths, the heater lamp includes a plurality of bulbs, Wherein the plurality of bulbs are respectively arranged parallel to the short side and the long side of the rectangular substrate, and the bulbs parallel to the long side of the rectangular substrate are arranged so as to be self-parallel to the The center point between the bulbs on the short side of the rectangular substrate is parallel to an extension line on which the long side extends.
當平行於所述矩形基板的所述短邊排列的兩個燈泡的中心點之間的間隙為底邊、且自所述兩個燈泡之間的中心點至在平行於所述長邊的方向上位置最鄰近的燈泡的中心點的距離為高度 時,所述燈泡可被排列成使底邊:高度比率為1:1.2。 When the gap between the center points of the two bulbs arranged parallel to the short side of the rectangular substrate is the bottom side, and from the center point between the two bulbs to the direction parallel to the long side The distance between the center point of the bulb closest to the upper position is the height When, the bulbs can be arranged so that the bottom edge: height ratio is 1:1.2.
根據又一示例性實施例,一種基板熱處理裝置包括:處理室,包括用於矩形基板的熱處理空間,所述矩形基板包括具有不同長度的短邊及長邊;加熱器區塊,包括產生熱能的多個燈泡,其中當所述燈泡的短邊:長邊排列比率是平行於所述矩形基板的所述短邊安置的所述燈泡之間的間隔對平行於所述矩形基板的所述長邊安置的所述燈泡之間的間隔的比率時,加熱燈包括所述多個燈泡,且所述燈泡的所述短邊:長邊排列比率可被確定成使在平行於所述矩形基板的所述短邊的方向上安置的燈泡數目與在平行於所述矩形基板的長邊的方向上安置的燈泡數目彼此相同;基板支撐構件,用以支撐所述矩形基板;以及熱處理控制部件,用以個別地控制所述燈泡,以使所述矩形基板得到均勻熱處理。 According to yet another exemplary embodiment, a substrate heat treatment apparatus includes: a processing chamber including a heat treatment space for a rectangular substrate including short sides and long sides with different lengths; a heater block including a heat generating A plurality of bulbs, wherein when the short side: long side arrangement ratio of the bulb is the interval between the bulbs arranged parallel to the short side of the rectangular substrate, the distance between the bulbs is parallel to the long side of the rectangular substrate When the ratio of the intervals between the bulbs placed, the heating lamp includes the plurality of bulbs, and the short side: long side arrangement ratio of the bulbs may be determined so that all the bulbs are parallel to the rectangular substrate. The number of bulbs arranged in the direction of the short side and the number of bulbs arranged in the direction parallel to the long side of the rectangular substrate are the same as each other; a substrate support member for supporting the rectangular substrate; and a heat treatment control part for The bulbs are individually controlled so that the rectangular substrate is uniformly heat-treated.
根據再一示例性實施例,一種基板熱處理裝置包括:處理室,包括用於矩形基板的熱處理空間,所述矩形基板包括具有不同長度的短邊及長邊;加熱器區塊,包括用以產生熱能的多個燈泡,其中所述多個燈泡分別平行於所述矩形基板的所述短邊及所述長邊安置,且平行於所述矩形基板的所述短邊的所述燈泡被排列成位於自平行於所述矩形基板的所述長邊的所述燈泡之間的中心點平行於所述短邊延伸的延伸線上;基板支撐構件,用以支撐所述矩形基板;以及熱處理控制部件,用以個別地控制所述燈泡,以使所述矩形基板得到均勻熱處理。 According to yet another exemplary embodiment, a substrate heat treatment apparatus includes: a processing chamber including a heat treatment space for a rectangular substrate including short sides and long sides with different lengths; a heater block including A plurality of thermal energy bulbs, wherein the plurality of bulbs are respectively arranged parallel to the short side and the long side of the rectangular substrate, and the bulbs parallel to the short side of the rectangular substrate are arranged to form Located on an extension line extending parallel to the short side from the center point between the bulbs parallel to the long side of the rectangular substrate; a substrate support member for supporting the rectangular substrate; and a heat treatment control part, It is used to individually control the bulbs so that the rectangular substrate can be uniformly heat-treated.
根據又一示例性實施例,一種基板熱處理裝置包括:處 理室,包括用於矩形基板的熱處理空間,所述矩形基板包括具有不同長度的短邊及長邊;加熱器區塊,包括用以產生熱能的多個燈泡,其中所述多個燈泡分別平行於所述矩形基板的所述短邊及所述長邊安置,且平行於所述矩形基板的所述長邊的所述燈泡被排列成位於自平行於所述矩形基板的所述短邊的所述燈泡之間的中心點平行於所述長邊延伸的延伸線上;基板支撐構件,用以支撐所述矩形基板;以及熱處理控制部件,用以個別地控制所述燈泡,以使所述矩形基板得到均勻熱處理。 According to yet another exemplary embodiment, a substrate heat treatment device includes: The treatment room includes a heat treatment space for a rectangular substrate, the rectangular substrate includes short sides and long sides with different lengths; the heater block includes a plurality of bulbs for generating heat, wherein the plurality of bulbs are respectively parallel The bulbs that are arranged on the short side and the long side of the rectangular substrate and are parallel to the long side of the rectangular substrate are arranged so as to be located in parallel to the short side of the rectangular substrate The center point between the bulbs is parallel to the extension line extending from the long side; a substrate support member for supporting the rectangular substrate; and a heat treatment control part for individually controlling the bulbs so that the rectangular The substrate is uniformly heat-treated.
可將位於所述加熱器區塊的邊緣部分處的所述燈泡控制成比其他燈泡產生更多的熱能。 The bulb located at the edge portion of the heater block can be controlled to generate more heat energy than other bulbs.
10‧‧‧玻璃基板 10‧‧‧Glass substrate
61、62、63、71、72、73、110‧‧‧燈泡 61, 62, 63, 71, 72, 73, 110‧‧‧Bulb
100‧‧‧加熱器區塊 100‧‧‧Heater block
101‧‧‧燈安裝表面 101‧‧‧Light mounting surface
200‧‧‧處理室 200‧‧‧Processing room
300‧‧‧石英窗口 300‧‧‧Quartz window
301‧‧‧密封構件 301‧‧‧Sealing components
400‧‧‧基板支撐構件 400‧‧‧Substrate support member
410‧‧‧升降銷 410‧‧‧Lift pin
a’、b’‧‧‧間隔 a’, b’‧‧‧ interval
A、A1‧‧‧短邊 A, A1‧‧‧Short side
B、B1‧‧‧長邊 B, B1‧‧‧long side
α1、α2‧‧‧底邊 α1, α2‧‧‧Bottom
β1、β2‧‧‧高度 β1、β2‧‧‧Height
結合附圖閱讀以下說明,可更詳細地理解示例性實施例,附圖中:圖1是當燈泡安裝於晶圓熱處理裝置的燈安裝表面上時,燈安裝表面的視圖。 The exemplary embodiments can be understood in more detail by reading the following description in conjunction with the accompanying drawings. In the accompanying drawings: FIG. 1 is a view of the lamp mounting surface when the bulb is mounted on the lamp mounting surface of the wafer heat treatment apparatus.
圖2是當線性燈安裝於玻璃基板熱處理裝置的燈安裝表面上時,燈安裝表面的視圖。 Fig. 2 is a view of the lamp mounting surface when the linear lamp is mounted on the lamp mounting surface of the glass substrate heat treatment device.
圖3是應用根據示例性實施例的加熱器區塊的基板熱處理裝置的剖視圖。 3 is a cross-sectional view of a substrate heat treatment apparatus to which a heater block according to an exemplary embodiment is applied.
圖4是說明當燈泡以預定間隔安裝於加熱器區塊的燈安裝表 面上時,用於對矩形玻璃基板進行熱處理的燈泡的視圖。 Figure 4 illustrates the lamp installation table when the bulbs are installed in the heater block at predetermined intervals On the surface, a view of a bulb used to heat treat a rectangular glass substrate.
圖5是說明當燈泡以慮及基板比率的線性形狀安裝於根據示例性實施例的加熱器區塊的燈安裝表面上時,用於對矩形玻璃基板進行熱處理的燈泡的視圖。 FIG. 5 is a view illustrating a light bulb used for heat treatment of a rectangular glass substrate when the light bulb is mounted on the lamp mounting surface of the heater block according to the exemplary embodiment in a linear shape that takes into account the substrate ratio.
圖6是說明當燈泡以第一實例的三角形狀安裝於根據示例性實施例的加熱器區塊的燈安裝表面上時,用於對矩形玻璃基板進行熱處理的燈泡的視圖。 6 is a view illustrating a light bulb used for heat treatment of a rectangular glass substrate when the light bulb is mounted on the lamp mounting surface of the heater block according to the exemplary embodiment in the triangular shape of the first example.
圖7是說明當燈泡以第二實例的三角形狀安裝於根據示例性實施例的加熱器區塊的燈安裝表面上時,用於對矩形玻璃基板進行熱處理的燈泡的視圖。 FIG. 7 is a view illustrating a bulb used for heat treatment of a rectangular glass substrate when the bulb is mounted on the lamp mounting surface of the heater block according to the exemplary embodiment in the triangular shape of the second example.
圖8是說明當線性燈通過通常方法安置於加熱器區塊中時,被傳遞至玻璃基板的熱量分佈的實驗結果。 Fig. 8 is an experimental result illustrating the distribution of heat transferred to the glass substrate when the linear lamp is installed in the heater block by the usual method.
圖9是說明當燈泡安置於根據實例性實施例的加熱器區塊中時,被傳遞至玻璃基板的熱量分佈的實驗結果。 FIG. 9 is an experiment result illustrating the distribution of heat transferred to the glass substrate when the bulb is placed in the heater block according to the exemplary embodiment.
以下,將參照附圖更詳細地闡述實施例。然而,本發明可具有不同形式而不應被解釋為受限於本文所述的實施例。更確切而言,提供這些實施例是為了使本揭示內容透徹及完整,並將向所屬領域的技術人員充分傳達本發明的範圍。在圖式中,通篇中相同參考編號指示相同元件。 Hereinafter, the embodiments will be explained in more detail with reference to the drawings. However, the present invention may have different forms and should not be construed as being limited to the embodiments described herein. More precisely, these embodiments are provided to make this disclosure thorough and complete, and to fully convey the scope of the present invention to those skilled in the art. In the drawings, the same reference numbers indicate the same elements throughout the text.
以下,玻璃基板意指應用於LCD、OLED及太陽電池等 的大基板。此處,所述大基板並非意指半導體晶圓,而是意指用於顯示器產業及光伏產業(photovoltaic industry)中的具有大面積的玻璃基板。舉例而言,用於顯示器的玻璃基板具有處於第一代的270mm×360mm至最近第八代的2200mm×2500mm大尺寸的範圍的尺寸,且具有矩形結構,所述矩形結構具有為不同長度的短邊與長邊。 Below, glass substrates are used in LCD, OLED, solar cells, etc. Large substrate. Here, the large substrate does not mean a semiconductor wafer, but a glass substrate with a large area used in the display industry and the photovoltaic industry. For example, a glass substrate for a display has a size ranging from 270mm×360mm in the first generation to a large size range of 2200mm×2500mm in the latest eighth generation, and has a rectangular structure with short lengths of different lengths. Side and long side.
圖3是應用根據示例性實施例的加熱器區塊的基板熱處理裝置的剖視圖。 3 is a cross-sectional view of a substrate heat treatment apparatus to which a heater block according to an exemplary embodiment is applied.
處理室200界定作為玻璃基板10的熱處理空間的內部空間,且玻璃基板10放置於熱處理空間內。玻璃基板10具有四角形(矩形)形狀,所述四角形(矩形)形狀具有不同長度的短邊與長邊。此處,所述短邊可對應於玻璃基板10的寬度,且在此種情形中,所述長邊可對應於玻璃基板10的長度。處理室200被形成為閉合中空矩形柱體形狀,但本發明並非僅限於此,而是可為各種柱體形狀。亦即,可為圓柱體及多角形柱體的形狀。此外,在處理室200的一個側面與另一側面中的每一者處,提供用於放入/取出基板的入口(未示出)。此處,任一入口連接至傳遞模組(未示出)。
The
處理室200在其內側處包括用於支撐玻璃基板10的基板支撐構件400。基板支撐構件400可在其內部包括在垂直方向上移動的多個升降銷(lift pin)410,並且可連接至用於提供升降力的機構,例如氣缸(未示出)。玻璃基板10可由升降銷410支撐。
當然,用於將玻璃基板10支撐至基板支撐構件400的機構並非僅限於升降銷410。可不同地利用能夠將玻璃基板10支撐至基板支撐構件400的各種機構,例如利用靜電力的機構(靜電卡盤)或利用真空吸持力的機構(未示出)。
The
可在加熱器區塊100與處理室200之間設置石英視窗300。石英視窗300是由將熱量傳送至位於石英視窗300下方的玻璃基板10的材料形成。石英視窗300在加熱器區塊100與處理室200之間保持處理室200的密封。石英視窗300通過利用密封構件301來密封加熱器區塊100與處理室200之間的間隙以維持加熱器區塊100的真空,並且保護處理室200不受外部環境(壓力、氣體及污染物)影響。此外,石英視窗300保護加熱器區塊100中的所述多個燈泡110,並防止由燈泡110產生的熱量而引起的副產物落至位於處理室200內熱處理空間中的玻璃基板10上。
A
熱處理控制部件(未示出)個別地控制加熱器區塊100中的所述多個燈泡110,以使玻璃基板10得到均勻熱處理。舉例而言,具有矩形形狀的玻璃基板10應得到均勻熱處理。為此,來自與玻璃基板10的邊緣部分面對的燈泡110的輻射熱能應大於來自與玻璃基板10的中心部分面對的燈泡110的輻射熱能。因此,熱處理控制部件可以使來自面對玻璃基板10的每一燈泡110的輻射熱能彼此不同或彼此相同的方式個別地控制燈泡110,從而使玻璃基板10的整個區域受到均勻的熱能輻照。
The heat treatment control part (not shown) individually controls the plurality of
熱處理控制部件個別地控制各燈泡,以使位於加熱器區
塊100的邊緣部分處的燈泡比位於加熱器區塊100的中心部分處的燈泡110產生更多的熱能。這是因為只有將更多熱能傳遞至更遠的邊緣部分,才可對整個玻璃基板進行均勻熱傳遞。此外,當燈泡被排列成線性形狀時,熱處理控制部件個別地控制所述燈泡,以使最鄰近加熱器區塊100的隅角的燈泡比位於加熱器區塊100的邊緣部分的其他燈泡110產生更少的熱能。這是因為由於位於第一側的端部處的燈泡及位於第二側的端部處的燈泡聚集在加熱器區塊100的隅角處,因而在加熱器區塊100的隅角處產生的熱能大於其他邊緣部分的熱能。
The heat treatment control unit individually controls each bulb so that it is located in the heater area
The bulbs at the edge portion of the
加熱器區塊100包括產生熱能的加熱燈。多個燈泡110可作為加熱燈被排列成線性形狀或三角形狀。燈泡110是由玻璃或石英形成的燈泡,且多個燈泡110排列於加熱器區塊100的燈安裝表面101上,以使所述多個燈泡110與玻璃基板10面對彼此。所述多個燈泡110通過使光朝玻璃基板10輻照而傳遞熱能。
The
為對具有不同長度的短邊與長邊的玻璃基板10執行均勻熱傳遞,所述多個燈泡110應均勻地排列於加熱器區塊100的燈安裝表面101上,且應滿足使所述多個燈泡110的數目最小化的條件以降低製造成本。亦即,應對玻璃基板10的每一單位面積輻照相同的輻照量,且應使燈泡的數目最小化。為此,安置於加熱器區塊100的燈安裝表面101上的所述多個燈泡110被排列成線性形狀或三角形狀。
In order to perform uniform heat transfer on the
以下,首先將闡述線性形狀的排列,接著將闡述三角形 狀的排列。 In the following, the arrangement of linear shapes will be explained first, followed by triangles Like arrangement.
首先,闡述所述多個燈泡安置於燈安裝表面101上以排列成線性形狀的實例。由於玻璃基板10具有矩形形狀,因此短邊與長邊具有不同的長度。因此,當燈泡110安置成沿燈安裝表面的短邊及長邊的線性排列具有相同的間隔時,沿所述短邊安置的燈泡110的數目變得不同於沿所述長邊安置的燈泡110的數目。舉例而言,如圖4所示,當矩形玻璃基板10被定位成面對加熱器區塊100的方形燈安裝表面101時,且當燈泡沿燈安裝表面的短邊A(寬度)與長邊B(長度)的方向以相同間隔安置時,沿玻璃基板10的短邊A1(寬度)與長邊B1(高度)的方向放置於面對位置處的燈泡110數目變得不同。舉例而言,參見圖4,可以理解,在玻璃基板10的短邊A1方向上面對玻璃基板10的位置處排列(第一排列)的燈泡110的數目是三,而在玻璃基板10的長邊B1方向上面對玻璃基板10的位置處排列(第二排列)的燈泡110的數目是四。如此一來,由於玻璃基板的長邊長於玻璃基板的短邊,因此被安置成面對玻璃基板的燈泡110的數目根據短邊或長邊的方向而變得不同。
First, an example in which the plurality of bulbs are arranged on the
如上所述,當在平行於玻璃基板的短邊A1的方向上面對玻璃基板排列(第一排列)的燈泡110的數目與在平行於玻璃基板的長邊B1方向上面對玻璃基板排列(第二排列)的燈泡110的數目彼此不同時,由於需要太大數目的燈泡110,因此製造加熱器區塊100的成本效率低。此外,即使安置大量燈泡,在熱能均勻
性方面也是低效率的。
As described above, when the number of
因此,在示例性實施例中,當產生熱能的所述多個燈泡110在加熱器區塊的燈安裝表面101上被排列成線性形狀時,燈泡110被排列成使在平行於玻璃基板的短邊A1的方向上面對玻璃基板排列(第一排列)的燈泡110的數目與在平行於玻璃基板的長邊B1方向的方向上面對玻璃基板排列(第二排列)的燈泡110的數目彼此相等。如此一來,當所述多個燈泡110被安置成面對具有不同長度的短邊與長邊的玻璃基板110時,在平行於玻璃基板的短邊A1的方向上面對玻璃基板排列(第一排列)的燈泡110的數目與在平行於玻璃基板的長邊B1方向的方向上面對玻璃基板排列(第二排列)的燈泡110的數目是相同的,且因此可使所使用的燈泡110最少。儘管上述排列具有比圖4所示燈泡110的排列(例如,其中燈泡110在短邊與長邊上以相同間隔進行安置的燈泡110的排列)低的均勻熱量傳遞效率,然而玻璃基板的熱處理效率不會降低,這是因為熱能可分別沿玻璃基板的短邊與長邊均勻地傳遞。
Therefore, in an exemplary embodiment, when the plurality of
在示例性實施例中,為使在平行於玻璃基板的短邊A1的方向上面對玻璃基板排列(第一排列)的燈泡110的數目與在平行於玻璃基板的長邊B1方向的方向上面對玻璃基板排列(第二排列)的燈泡110的數目可為相同的,所述燈泡的短邊:長邊排列比率被確定成使在平行於玻璃基板的短邊的方向上安置的燈泡數目與在平行於玻璃基板的長邊B1的方向上安置的燈泡110的數目相
同。此處,燈泡的短邊:長邊排列比率意指如圖5所示平行於玻璃基板10的短邊A1安置的燈泡之間的間隔a’對平行於玻璃基板10的長邊B1安置的燈泡之間的間隔b’的比率。為參考起見,燈泡的排列比率意指燈泡被安置的間隔,且具體而言,意指每一燈泡110的中心點之間的間隔。
In an exemplary embodiment, the number of
同時,當玻璃基板10的短邊A1的長度與長邊B1的長度的比率是玻璃基板10的短邊:長邊基板比率時,可根據玻璃基板10的短邊:長邊基板比率確定燈泡110的短邊:長邊排列比率。亦即,可根據作為玻璃基板10的短邊:長邊比率的短邊:長邊基板比率來確定作為當燈泡110安裝於燈安裝表面101上時的排列比率的燈泡110的短邊:長邊排列比率。
At the same time, when the ratio of the length of the short side A1 of the
舉例而言,燈泡110的短邊:長邊排列比率可被實現為具有與玻璃基板10的短邊:長邊基板比率相同的短邊:長邊排列比率。如圖5所示,當玻璃基板10的短邊A1:長邊B1基板比率為1:1.2時,燈泡的短邊:長邊排列比率-其為平行於玻璃基板10的短邊A1安置的燈泡之間的間隔a’對平行於玻璃基板10的長邊B1安置的燈泡之間的間隔b’的比率-也被實現為1:1.2。
For example, the short-side:long-side arrangement ratio of the
同時,當通過對應於玻璃基板10的短邊:長邊基板比率排列燈泡110來製造加熱器區塊100時,可使熱處理裝置的通用性變弱。為解決此問題,另一選擇是可利用玻璃基板10的基板比率的平均值。亦即,可將其中在平行於玻璃基板10的短邊A1的方向上排列(第一排列)的燈泡110的數目與在平行於玻璃基板的
長邊B1方向的方向上排列(第二排列)的燈泡110的數目為相同的方法實現成使燈泡110的短邊:長邊排列比率為短邊:長邊基板比率不同的多個玻璃基板10的短邊:長邊基板比率的平均值。
At the same time, when the
玻璃基板10意指顯示器產業及光伏產業中所使用的具有大面積的玻璃基板。如下表1所示,玻璃基板10具有處於自第一代的270mm×360mm至最近第八代的2200mm×2500mm大尺寸的範圍的各種尺寸。
The
因此,第一代至第八代的這些玻璃基板10的基板比率的平均值可被確定為燈泡110的短邊:長邊排列比率。允許燈泡110的短邊:長邊排列比率具有處於約1:1.14至約1:1.35範圍內的任一排列比率。優選地,由於第一代至第八代的玻璃基板10的寬度:
長度基板比率的平均值為1:1.2,因此當短邊是寬度且長邊是長度時,燈泡110的短邊:長邊排列比率可被實現為具有1:1.2的排列比率。
Therefore, the average value of the substrate ratios of the
以上,闡述了其中燈泡110被排列成線性形狀的實施例。然而,即使燈泡110在燈安裝表面101上不被安置成線性形狀,例如燈泡110被排列成三角形狀,均勻熱能也可傳遞至玻璃基板且燈泡110的數目也可被實現為最小化。以下,將闡述其中燈泡110被排列成三角形狀的實施例。
In the above, the embodiment in which the
由於玻璃基板10具有矩形形狀,因此玻璃基板10的短邊與長邊具有不同長度。因此,為將燈泡110均勻地安置於玻璃基板10上並安置最小數目的燈泡110,燈泡110被排列成三角形狀。舉例而言,所述多個燈泡110如圖6所示平行於玻璃基板10的短邊A1及長邊B1安置。平行於玻璃基板的短邊A1的燈泡被排列成位於自平行於玻璃基板的長邊B1的燈泡之間的中心點平行於短邊A1的延伸線上。
Since the
當平行於玻璃基板的長邊B1排列的兩個燈泡61及62的中心點之間的距離為底邊α1、且自所述兩個燈泡61及62之間的中心點至在平行於短邊A1的方向上位置最鄰近的燈泡63的中心點的距離為高度β1時,所述燈泡被排列成使底邊:高度比率為1.5:1。這是因為當平行於玻璃基板10的長邊B1的三角形的底邊α1對高度β1的比率小於或大於1.5時,由於難以傳遞均勻熱能而難以使熱效率最佳化。
When the distance between the center points of the two
同時,作為另一實施例,如圖7所示,所述多個燈泡同樣地分別平行於玻璃基板10的短邊A1及長邊B1安置。平行於玻
璃基板的長邊B1的燈泡被排列成位於自平行於玻璃基板的短邊A1的燈泡之間的中心點在長邊B1的方向上延伸的平行線上。亦即,當平行於玻璃基板的短邊A1排列的兩個燈泡71及72的中心點之間的距離為底邊α2、且自所述兩個燈泡71及72之間的中心點至在平行於長邊B1的方向上位置最鄰近的燈泡73的中心點的距離為高度β2時,所述燈泡被排列成使底邊:高度比率為1:1.2。這是因為當平行於玻璃基板10的長邊B1的三角形的高度β2對底邊α2的比率小於或大於1.2時,由於難以傳遞均勻熱能而難以使熱效率最佳化。
At the same time, as another embodiment, as shown in FIG. 7, the multiple bulbs are similarly arranged parallel to the short side A1 and the long side B1 of the
為參考起見,自利用二維熱處理方程式對玻璃基板進行模擬的結果可見,此三角形排列比率具有最佳熱效率,且可獲得具有最小數目的燈泡的排列比率。正如所已知的,一旦已知以下方程式1中玻璃基板的測量溫度T,便可計算出分佈於熱處理玻璃基板上的熱分佈能量S。
For reference, it can be seen from the results of simulating the glass substrate using the two-dimensional heat treatment equation that this triangular arrangement ratio has the best thermal efficiency, and the arrangement ratio with the smallest number of bulbs can be obtained. As known, once the measured temperature T of the glass substrate in the
其中,T為所測量絕對溫度,P為燈驅動功率,且j為燈的數目。另外,s為燈距離變數,a為熱分布模型係數,且b為初始熱能量。 Among them, T is the measured absolute temperature, P is the lamp driving power, and j is the number of lamps. In addition, s is the lamp distance variable, a is the thermal distribution model coefficient, and b is the initial thermal energy.
其中,S為熱分佈能量,A為熱分佈形狀,P為燈驅動功率,m為燈泡在短邊方向上的熱分佈位置,且n為燈泡在長邊方向上的熱分佈位置。 Among them, S is the heat distribution energy, A is the heat distribution shape, P is the lamp driving power, m is the heat distribution position of the bulb in the short-side direction, and n is the heat distribution position of the bulb in the long-side direction.
熱分佈能量可如以上方程式2所示根據所述多個燈泡110的分佈位置而改變。自通過調整此分佈位置而得到的模擬及實驗的結果,可獲得具有最小數目的燈泡110的三角排列比率。
The heat distribution energy can be changed according to the distribution positions of the plurality of
同時,在圖8中,說明當通常的線性燈安置於燈安裝表面101上時傳遞至玻璃基板10的熱分佈,且在圖9中,說明當根據示例性實施例的燈泡110安置於燈安裝表面101上時傳遞至玻璃基板10的熱分佈。在圖8及圖9中,x軸及y軸分別標示玻璃基板的寬度邊及長度邊的位置,且高度標示玻璃基板的熱分佈。如圖8所示,由於個別控制會因線性燈的線性排列而受到限制,因此可能不會獲得具有均勻熱分佈的表面。然而,如圖9所示,當燈泡110被排列成三角形狀且進行個別控制時,可以理解,可獲得具有均勻熱分佈的表面。可通過個別地控制排列成三角形狀的燈泡110而使均勻熱分佈的區域變寬。
Meanwhile, in FIG. 8, the heat distribution transmitted to the
以上,闡述了其中利用具有長度互不相同的短邊與長邊的矩形玻璃基板的示例性實施例。然而,基板的類型並非僅限於此,而是可顯而易見的是,本發明可應用於其他各種矩形基板,只要所述矩形基板為具有長度互不相同的短邊與長邊的矩形基板即可。 Above, an exemplary embodiment in which a rectangular glass substrate having short sides and long sides different in length from each other is used is explained. However, the type of the substrate is not limited to this, but it is obvious that the present invention can be applied to various other rectangular substrates, as long as the rectangular substrate is a rectangular substrate having short and long sides with different lengths.
根據示例性實施例,可通過在對矩形基板執行熱處理的加熱器區塊中對所述多個燈泡進行排列,而容易地執行對每一燈 泡的個別控制。此外,根據示例性實施例,慮及矩形基板的寬度與長度的比率來排列所述燈泡,從而可在矩形基板的熱處理期間保持熱均勻性,且可使排列於加熱器區塊中的燈泡數目最小化。因此,可降低利用燈泡的基板熱處理裝置的製造成本。 According to an exemplary embodiment, it is possible to easily perform the adjustment of each lamp by arranging the plurality of bulbs in a heater block that performs heat treatment on a rectangular substrate. Individual control of the bubble. In addition, according to an exemplary embodiment, the bulbs are arranged in consideration of the ratio of the width to the length of the rectangular substrate, so that thermal uniformity can be maintained during the heat treatment of the rectangular substrate, and the number of bulbs arranged in the heater block minimize. Therefore, the manufacturing cost of the substrate heat treatment device using the bulb can be reduced.
儘管已參照具體實施例闡述了本發明,然而本發明並非僅限於此而是僅由申請專利範圍限定。因此,所屬領域的技術人員應容易地理解,在不背離由隨附申請專利範圍界定的本發明精神及範圍的條件下,可對本發明作出各種潤飾及改變。 Although the present invention has been described with reference to specific embodiments, the present invention is not limited thereto but only by the scope of the patent application. Therefore, those skilled in the art should easily understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the present invention defined by the scope of the attached patent application.
10‧‧‧玻璃基板 10‧‧‧Glass substrate
110‧‧‧燈泡 110‧‧‧Bulb
101‧‧‧燈安裝表面 101‧‧‧Light mounting surface
a’、b’‧‧‧間隔 a’, b’‧‧‧ interval
A、A1‧‧‧短邊 A, A1‧‧‧Short side
B、B1‧‧‧長邊 B, B1‧‧‧long side
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