TWI709667B - 奈米雙晶銅金屬層及其製備方法及包含其的基板 - Google Patents
奈米雙晶銅金屬層及其製備方法及包含其的基板 Download PDFInfo
- Publication number
- TWI709667B TWI709667B TW108144788A TW108144788A TWI709667B TW I709667 B TWI709667 B TW I709667B TW 108144788 A TW108144788 A TW 108144788A TW 108144788 A TW108144788 A TW 108144788A TW I709667 B TWI709667 B TW I709667B
- Authority
- TW
- Taiwan
- Prior art keywords
- nano
- substrate
- metal layer
- electroplating
- copper metal
- Prior art date
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 89
- 239000010949 copper Substances 0.000 title claims abstract description 89
- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 238000000034 method Methods 0.000 title claims abstract description 6
- 239000013078 crystal Substances 0.000 claims abstract description 98
- 229910052751 metal Inorganic materials 0.000 claims description 76
- 239000002184 metal Substances 0.000 claims description 76
- 238000009713 electroplating Methods 0.000 claims description 62
- 238000002360 preparation method Methods 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 19
- 229910001431 copper ion Inorganic materials 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 7
- 238000010884 ion-beam technique Methods 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000009864 tensile test Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- DEXFNLNNUZKHNO-UHFFFAOYSA-N 6-[3-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-3-oxopropyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)C(CCC1=CC2=C(NC(O2)=O)C=C1)=O DEXFNLNNUZKHNO-UHFFFAOYSA-N 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- RIRXDDRGHVUXNJ-UHFFFAOYSA-N [Cu].[P] Chemical compound [Cu].[P] RIRXDDRGHVUXNJ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- BSXVKCJAIJZTAV-UHFFFAOYSA-L copper;methanesulfonate Chemical compound [Cu+2].CS([O-])(=O)=O.CS([O-])(=O)=O BSXVKCJAIJZTAV-UHFFFAOYSA-L 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/615—Microstructure of the layers, e.g. mixed structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/10—Agitating of electrolytes; Moving of racks
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/615—Microstructure of the layers, e.g. mixed structure
- C25D5/617—Crystalline layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/12—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by electrolysis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
- H05K2203/0703—Plating
- H05K2203/0726—Electroforming, i.e. electroplating on a metallic carrier thereby forming a self-supporting structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Electroplating Methods And Accessories (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
本揭露提供一種奈米雙晶銅層,其50%以上的體積包括複數個柱狀晶粒,該複數個柱狀晶粒彼此間係互相連接,至少70%之該複數個柱狀晶粒係由複數個奈米雙晶沿著[111]晶軸方向堆疊而成,且相鄰的該複數個柱狀晶粒間之夾角係大於20度且小於或等於60度。此外,本揭露更提供前述奈米雙晶銅層的製備方法及包含其之基板。
Description
本揭露關於一種奈米雙晶銅金屬層、其製備方法及包含其之基板,由指一種晶粒特殊排列的奈米雙晶銅金屬層、其製備方法及包含其之基板。
電子元件的可靠度主要是取決於導線的抗電遷移能力(anti-electromigration ability)。目前的研究中,其中一種能夠提高導線的抗電遷移能力的方法,是在導線結構中添加奈米雙晶金屬結構。如此,當金屬原子沿著電子流動的方向產生電遷移時,由於奈米雙晶金屬結構的雙晶晶界能夠延緩電遷移的金屬原子的流失速度,因此可以降低導線中空孔的形成速率,直接地改善電子元件的使用壽命。也就是說,導線結構中含有越多奈米雙晶金屬結構,導線的抗電遷移能力就會越高。
於目前的奈米雙晶銅結構中,奈米雙晶晶粒多為由基板垂直成長的柱狀晶粒。雖然此種奈米雙晶銅結構已有良好的特性,但若能提供一種新穎的奈米雙晶銅結構,其能展現有別於目前奈米雙晶銅結構的其他特性,則可提供電子元件的另一選擇。
本揭露關於一種奈米雙晶銅金屬層、其製備方法及包含其之基板,其中奈米雙晶銅金屬層具有較佳的伸長率,可大幅提升使用奈米雙晶銅金屬層的電子產品的可靠度。
本揭露提供一種奈米雙晶銅層,其50%以上的體積包括複數個柱狀晶粒,該複數個柱狀晶粒彼此間係互相連接,至少70%之該複數個柱狀晶粒係由複數個奈米雙晶沿著[111]晶軸方向堆疊而成,且相鄰的該複數個柱狀晶粒間之夾角係大於20度且小於或等於60度。
於習知的(111)柱狀晶粒奈米雙晶銅層中,相鄰柱狀晶粒間之夾角多約為0度。於本揭露所提供的新穎奈米雙晶銅層中,相鄰柱狀晶粒間之夾角可大於20度且小於或等於60度,而與習知的奈米雙晶銅層結構不同。此外,經實驗證實,當相鄰柱狀晶粒間之夾角大於20度且小於或等於60度時,奈米雙晶銅層的伸長率較相鄰柱狀晶粒間之夾角約為0度的奈米雙晶銅層要佳。因此,本揭露的奈米雙晶銅層除了保有習知奈米雙晶銅層(即相鄰柱狀晶粒間之夾角約為0度的奈米雙晶銅層)的優異抗電遷移特性以及機械性質外,更具有較佳的伸長率;故本揭露的奈米雙晶銅層的應用領域將更為廣泛。
於本揭露中,至少70%之柱狀晶粒係具有一縱向軸(longitude axis),其中縱向軸係奈米雙晶之堆疊方向(即成長方向),奈米雙晶銅金屬層具有一厚度方向,厚度方向係垂直奈米雙晶銅金屬層之表面。其中,柱狀晶粒之[111]晶軸與縱向軸夾角為大於或等於0度至小於或等於20度;換言之,柱狀晶粒之[111]晶軸與奈米雙晶的堆疊方向(即成長方向)的夾角為大於或等於0度至小於或等於20度。此外,柱狀晶粒之縱向軸之方向係與奈米雙晶銅金屬層之厚度方向
之夾角係大於20度且小於或等於60度。於本揭露的一實施例中,柱狀晶粒之[111]晶軸與奈米雙晶的堆疊方向(即成長方向)的夾角實質上約為0度。
於本揭露中,奈米雙晶銅金屬層的厚度可依據需求進行調整。於本揭露的一實施例中,奈米雙晶銅金屬層之厚度可介於0.1μm至500μm之間。於本揭露的另一實施例中,奈米雙晶銅金屬層之厚度可介於0.8μm至200μm之間。於本揭露的再一實施例中,奈米雙晶銅金屬層之厚度可介於1μm至20μm之間。然而,本揭露並不僅限於此。
於本揭露中,奈米雙晶銅金屬層中的至少70%之柱狀晶粒係由複數個奈米雙晶堆疊而成。於本揭露的一實施例中,奈米雙晶銅金屬層中的至少90%之柱狀晶粒係由複數個奈米雙晶堆疊而成。於本揭露的另一實施例中,奈米雙晶銅金屬層中的每一柱狀晶粒係由複數個奈米雙晶堆疊而成。
於本揭露中,奈米雙晶銅金屬層中的至少70%之柱狀晶粒係由複數個奈米雙晶沿著[111]晶軸方向堆疊而成。於本揭露的一實施例中,奈米雙晶銅金屬層中的至少90%之柱狀晶粒係由複數個奈米雙晶沿著[111]晶軸方向堆疊而成。於本揭露的另一實施例中,奈米雙晶銅金屬層中的每一柱狀晶粒係由複數個奈米雙晶沿著[111]晶軸方向堆疊而成。
於本揭露中,奈米雙晶銅金屬層中的柱狀晶粒之短軸長度可分別介於0.1μm至50μm之間。於本揭露的一實施例中,柱狀晶粒之短軸長度可分別介於0.1μm至30μm之間。於本揭露的另一實施例中,柱狀晶粒之短軸長度可分別介於0.1μm至20μm之間。於本揭露的再一實施例中,柱狀晶粒之短軸長度可分別介於0.1μm至10μm之間。於本揭露中,所謂的「柱狀晶粒之短軸長度」是指與柱狀晶粒堆疊方向實質上垂直的方向上的柱狀晶粒的長度。此外,所謂的
「實質上垂直的方向」是指兩方向的夾角可介於85度至90度之間,且較佳為90度。再者,於本揭露的一實施例中,「柱狀晶粒之短軸長度」也可稱之為柱狀晶粒的寬度。
於本揭露中,奈米雙晶銅金屬層中的柱狀晶粒之厚度可分別介於0.01μm至500μm之間。於本揭露的一實施例中,柱狀晶粒之厚度可分別介於0.1μm至200μm之間。於本揭露的另一實施例中,柱狀晶粒之厚度可分別介於0.1μm至150μm之間。於本揭露的再一實施例中,柱狀晶粒之厚度可分別介於0.1μm至100μm之間。於本揭露的更一實施例中,柱狀晶粒之厚度可分別介於1μm至50μm之間。
本揭露的奈米雙晶銅金屬層是透過電鍍的方式製備而得。在此,本揭露提供一種形成前述奈米雙晶銅金屬層的方法,包括下列步驟:提供一電鍍裝置,該裝置包括一陽極、一陰極、一電鍍液、以及一電力供應源,該電力供應源係分別與該陽極及該陰極連接,且該陽極及該陰極係浸泡於該電鍍液中;以一第一電流密度進行電鍍,其中該第一電流密度介於一系統極限電流密度之0.8至1.0倍之間;以及以一第二電流密度進行電鍍,其中該第二電流密度介於該系統極限電流密度之0.1至0.6倍之間,以於該陰極的一表面成長前述的奈米雙晶銅金屬層。其中,電鍍液係包括有:一銅離子來源、一酸、以及一氯離子來源。
於本揭露的製備方法中,先以一電流密度較高的第一電流密度進行電鍍,其為一成核優於成長的電鍍條件。而後,再以一電流密度較低的第二電流密度進行電鍍,其為一成長優於成核的電鍍條件。如此,可得到本揭露的相鄰柱狀晶粒間之夾角係大於20度且小於或等於60度的奈米雙晶銅金屬層。
特別是,當以一電流密度較高的第一電流進行電鍍時,陰極表面附近的電鍍液中的銅離子來源會快速聚集在陰極表面,而形成一晶種層,該晶種層可包括複數銅核(甚至是奈米雙晶銅核)。當銅離子來源快速聚集在陰極表面形成銅核時,於電解槽中的電鍍液會形成一銅離子濃度梯度,其中,銅離子濃度為銅核表面最低,而遠離陰極表面逐漸增加。此外,由於銅核成顆粒狀,故銅離子濃度梯度會呈現一球形分佈。當形成包括銅核的晶種層後,以一電流密度較低的第二電流密度進行電鍍,而奈米雙晶銅晶粒則由銅核的表面成長堆疊;此時,奈米雙晶銅晶粒的成長會沿著球形銅離子濃度梯度的法線方向進行,使得相鄰晶粒間之夾角較大。而後,當持續以電流密度較低的第二電流進行電鍍時,隨著時間過去,電解槽內不同區域的銅離子濃度相差不大(甚至相同),而可穩定且持續的成長出奈米雙晶銅晶粒。
在電鍍溶液中,銅離子補充至陰極表面的最大速率,即為可以產生電鍍銅的最大電流,稱為極限電流密度(Limiting Current Density)。此極限電流密度與溶液中銅離子濃度、攪拌速率、電鍍液溫度有關。為造成陰極表面銅離子濃度梯度,所需施加的電流可隨不同電鍍槽銅離子濃度、攪拌速率、電鍍液溫度有很大的差異,和極限電流密度大小有較大的相關性,故以極限電流密度之比值做為所需電流密度的定義。
於本揭露的製備方法中,第一電流密度對系統極限電流密度的比值可介於0.8至1.0之間。於本揭露的一實施例中,第一電流密度對系統極限電流密度的比值可介於0.8至0.95之間。
於本揭露的製備方法中,第二電流密度對系統極限電流密度的比值可介於0.1至0.6之間。於本揭露的一實施例中,第二電流密度對系統極限電流密度的比值可介於0.2至0.6之間。
於本揭露的製備方法中,第一電流密度的電鍍時間可介於1秒至20秒之間。於本揭露的一實施例中,第一電流密度的電鍍時間可介於1秒至10秒之間。在此,第一電流密度的電鍍時間不宜太長,否則不易成長出相鄰柱狀晶粒間之夾角係大於20度且小於或等於60度的奈米雙晶銅金屬層。至於第二電流密度的電鍍時間,則根據所需要的奈米雙晶銅金屬層厚度進行調整,而無特殊限制。
於本揭露的製備方法中,當以一電流密度較高的第一電流密度進行電鍍時,可形成一晶種層。因此,本揭露的奈米雙晶銅金屬層可更包括一晶種層,其佔奈米雙晶銅金屬層之1%至50%、1%至30%或1%至10%的體積。
於本揭露的製備方法中,氯離子可用以微調整晶粒成長方向,使奈米雙晶銅晶粒具有優選方向。酸可為一有機或無機酸,以增加電解質濃度而提高電鍍速度,例如可使用硫酸、甲基磺酸、或其混合;且電鍍液中的酸之濃度可介於80g/L至120g/L之間。此外,銅離子來源可為銅之鹽化物,例如,硫酸銅或甲基磺酸銅;且電鍍液中的銅離子濃度可介於20g/L至100g/L之間。於本揭露的一實施例中,銅離子濃度可介於30g/L至80g/L之間。於本揭露的另一實施例中,銅離子濃度可介於40g/L至70g/L之間。當銅離子濃度過高時,則不易成長出相鄰柱狀晶粒間之夾角係大於20度且小於或等於60度的奈米雙晶銅金屬層。再者,電鍍液可更選擇性的包括一添加物,例如:明膠(gelatin)、介面活性劑、或晶格修整劑(lattice modification agent)。
於本揭露的製備方法中,電鍍可以直流電鍍、高速脈衝電鍍、或直流電鍍與高速脈衝電鍍二者交互使用為之。
於本揭露的製備方法中,於電鍍時,陰極或電鍍液可以50到1500rpm之轉速旋轉,以幫助晶粒的成長方向及速率。
於本揭露的製備方法中,陰極可為一表面具有一金屬層之基板、或一金屬基板。例如,基板可為一矽基板、一玻璃基板、一石英基板、一金屬基板、一塑膠基板、一印刷電路板、一三五族材料基板、或其層疊基板。
因此,本揭露更提供一種具有奈米雙晶銅金屬層之基板,包括:一基板;以及如前述的奈米雙晶銅金屬層,設置於基板的表面或內部。在此,基板的例子如前所述,而不再贅述。
於本揭露中,由於奈米雙晶銅金屬層具有優異的機械特性、抗電遷移特性、及伸長率等,而可應用於製備三維積體電路(3D-IC)之直通矽晶穿孔、封裝基板之引腳通孔、各種金屬導線、或基板線路等處,對於積體電路工業之應用發展非常有貢獻。
下文將配合圖式並詳細說明,使本揭露的特徵更明顯。
1:電鍍裝置
11:陽極
12:陰極
13:電鍍液
14:奈米雙晶銅金屬層
15:直流電供應源
圖1為本揭露所使用的電鍍裝置的示意圖。
圖2為本接露所使用電鍍裝置的電壓-電流曲線以量測該系統的極限電流密度(Limiting Current Density)。
圖3為本揭露一實施例的奈米雙晶銅金屬層的聚焦離子束(Focused Ion Beam)剖面圖。
圖4為本揭露一比較例的奈米雙晶銅金屬層的聚焦離子束剖面圖。
圖5為本揭露實施例與比較例的奈米雙晶銅金屬層的應變拉伸曲線圖。
以下係藉由具體實施例說明本揭露之實施方式,熟習此技藝之人士可由本說明書所揭示之內容輕易地了解本揭露之其他優點與功效。本揭露亦可藉由其他不同的具體實施例加以施行或應用,本說明書中的各項細節亦可針對不同觀點與應用,在不悖離本創作之精神下進行各種修飾與變更。
應注意的是,在本文中,除了特別指明者之外,具備「一」元件不限於具備單一的該元件,而可具備一或更多的該元件。
此外,在本文中,除了特別指明者之外,「第一」、「第二」等序數,只是用於區別具有相同名稱的多個元件,並不表示它們之間存在位階、層級、執行順序、或製程順序。一「第一」元件與一「第二」元件可能一起出現在同一構件中,或分別出現在不同構件中。序數較大的一元件的存在不必然表示序數較小的另一元件的存在。
此外,在本文中,所謂的「上」、「下」、「左」、「右」、「前」、「後」、或「之間」等用語,只是用於描述多個元件之間的相對位置,並在解釋上可推廣成包括平移、旋轉、或鏡射的情形。
此外,在本文中,除了特別指明者之外,「一元件在另一元件上」或類似敘述不必然表示該元件接觸該另一元件。
此外,在本文中,「約」一數值是指包括該數值的±10%的範圍,特別是該數值±5%的範圍。
實施例1
圖1為本實施例1所使用的電鍍裝置的示意圖。其中,電鍍裝置1包括有陽極11、陰極12,係浸泡於電鍍液13中並分別連接至一直流電供應源15。在此,陽極11為可溶性磷銅塊;陰極12則為一鈦基板。電鍍液13係包括有硫酸銅(銅離子濃度為30g/L)、氫氯酸(氯離子濃度為50mg/L)、以及硫酸(濃度為100g/L)。
接著,以20 ASD的電流密度之直流電進行電鍍6秒。而後,再以12 ASD的電流密度之直流電進行電鍍300秒,由陰極12表面開始成長奈米雙晶銅。陽極11或電鍍液13有施予約800rpm之攪拌轉速。此外,成長出的奈米雙晶銅金屬層14的厚度約為10μm。
本電鍍系統在800rpm轉速下,將電壓持續增加紀錄電流,量測極限電流密度(Limiting Current Density)為21.6 ASD,如圖2所示。
圖3為本實施例的奈米雙晶銅金屬層的聚焦離子束(Focused Ion Beam)剖面圖。如圖3所示,成長完成之奈米雙晶銅金屬層之50%以上的體積包括複數個柱狀晶粒,這些柱狀晶粒彼此間互相連接。如圖3所示,這些柱狀晶粒是由複數個層狀的奈米雙晶銅所組成,奈米雙晶延伸到奈米雙晶銅金屬層表面,因此奈米雙晶銅金屬層表面所顯露的為雙晶的(111)面。於本實施例中,奈米雙晶銅金屬層之所有表面幾乎均為(111)面。此外,[111]晶軸係為垂直(111)面之軸,故70%以上的柱狀晶粒是由奈米雙晶沿著[111]晶軸方向堆疊而成。於本實施例中,幾乎所有的柱狀晶粒均由奈米雙晶沿著[111]晶軸方向堆疊而成。
特別是,如圖3所示,於本實施例中,相鄰的柱狀晶粒間之夾角不為0度,而是大於20度且小於或等於60度。此外,柱狀晶粒之短軸長度分別介於0.5μm至3μm之間,且柱狀晶粒之厚度分別介於2μm至5μm之間。
比較例1
在此,除了直接以12 ASD的電流密度之直流電進行電鍍300秒外,其餘使用與實施例相同的條件成長奈米雙晶銅金屬層。
圖4為本比較例的奈米雙晶銅金屬層的聚焦離子束剖面圖。如圖3及圖4所示,實施例與比較例的奈米雙晶銅金屬層的最大差異在於,實施例的奈米雙晶銅金屬層中相鄰的柱狀晶粒間之夾角大於20度且小於或等於60度,而比較例的奈米雙晶銅金屬層中相鄰的柱狀晶粒間之夾角接近0度。
應變拉伸試驗
將電鍍銅層自基板剝離,並依IPC-TM-650拉伸測試規範進行測試,將電鍍銅層裁切成12.7mm寬、150mm長之長條狀試片,拉伸試驗機為INSTRON 4465,gauge length為50mm,拉伸速度為5mm/min。
如表1及圖5所示,相較於比較例的奈米雙晶銅金屬層,實施例的奈米雙晶銅金屬層具有較大的伸長率。
實施例2-5
同實施例1之電鍍系統,調整電鍍液銅離子濃度、攪拌轉速、電鍍溫度,可以得到不同極限電流密度,並應用分段電流電鍍參數,電鍍出銅層並以聚焦離子束剖面觀察相鄰柱狀晶粒間夾角是否在20度到60度間。
本揭露的奈米雙晶銅金屬層具有相鄰的柱狀晶粒間之夾角大於20度且小於或等於60度的特徵。此外,本揭露的奈米雙晶銅金屬層更具有較大的伸長率;故本揭露的奈米雙晶銅金屬層的應用領域可更加廣泛。
儘管本揭露已透過多個實施例來說明,應理解的是,只要不背離本揭露的精神及申請專利範圍所主張者,可作出許多其他可能的修飾及變化。
Claims (11)
- 一種奈米雙晶銅金屬層,其中該奈米雙晶銅金屬層之50%以上的體積包括複數個柱狀晶粒,該複數個柱狀晶粒彼此間互相連接,至少70%之該複數個柱狀晶粒係由複數個奈米雙晶沿著[111]晶軸方向堆疊而成,且相鄰的該複數個柱狀晶粒間之夾角係大於20度且小於或等於60度。
- 如請求項1所述的奈米雙晶銅金屬層,其中該奈米雙晶銅金屬層之厚度介於0.1μm至500μm之間。
- 如請求項1所述的奈米雙晶銅金屬層,其中每一該複數個柱狀晶粒係由複數個奈米雙晶沿著[111]晶軸方向堆疊而成。
- 如請求項1所述的奈米雙晶銅金屬層,其中該複數個柱狀晶粒之短軸長度分別介於0.1μm至50μm之間。
- 如請求項1所述的奈米雙晶銅金屬層,其中該複數個柱狀晶粒之厚度分別介於0.01μm至500μm之間。
- 一種奈米雙晶銅金屬層的製備方法,包括下列步驟:提供一電鍍裝置,該裝置包括一陽極、一陰極、一電鍍液、以及一電力供應源,該電力供應源係分別與該陽極及該陰極連接,且該陽極及該陰極係浸泡於該電鍍液中;以一第一電流密度進行電鍍,其中該第一電流密度介於一系統極限電流密度之0.8至1.0倍之間,且電鍍時間係介於1秒至20秒之間;以及以一第二電流密度進行電鍍,其中該第二電流密度介於該系統極限電流密度之0.1至0.6倍之間,以於該陰極的一表面成長如請求項1至5項任一項所述的奈米雙晶銅金屬層。
- 如請求項6所述的製備方法,其中電鍍係以直流電鍍、高速脈衝電鍍、或直流電鍍與高速脈衝電鍍二者交互使用為之。
- 如請求項6所述的製備方法,其中該陰極係一表面具有一金屬層之基板、或一金屬基板。
- 如請求項8所述的製備方法,其中該基板為一矽基板、一玻璃基板、一石英基板、一金屬基板、一塑膠基板、一印刷電路板、一三五族材料基板、或其層疊基板。
- 一種具有奈米雙晶銅金屬層之基板,包括:一基板;以及一如請求項1至5項任一項所述的奈米雙晶銅金屬層,設置於該基板的表面或內部。
- 如請求項10所述的基板,其中該基板為一矽基板、一玻璃基板、一石英基板、一金屬基板、一塑膠基板、一印刷電路板、一三五族材料基板、或其層疊基板。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW108144788A TWI709667B (zh) | 2019-12-06 | 2019-12-06 | 奈米雙晶銅金屬層及其製備方法及包含其的基板 |
CN202011140407.6A CN112921370B (zh) | 2019-12-06 | 2020-10-22 | 纳米双晶铜金属层及其制备方法及包含其的基板 |
US17/097,033 US11242619B2 (en) | 2019-12-06 | 2020-11-13 | Nano-twinned copper layer, method for manufacturing the same, and substrate comprising the same |
JP2020195994A JP7055183B2 (ja) | 2019-12-06 | 2020-11-26 | ナノ双晶銅金属層、その製造方法及びそれを含む基板 |
KR1020200167881A KR102433117B1 (ko) | 2019-12-06 | 2020-12-03 | 나노-트윈 구리 층, 이를 제조하는 방법, 그리고 이를 포함하는 기판 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW108144788A TWI709667B (zh) | 2019-12-06 | 2019-12-06 | 奈米雙晶銅金屬層及其製備方法及包含其的基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
TWI709667B true TWI709667B (zh) | 2020-11-11 |
TW202122639A TW202122639A (zh) | 2021-06-16 |
Family
ID=74202298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108144788A TWI709667B (zh) | 2019-12-06 | 2019-12-06 | 奈米雙晶銅金屬層及其製備方法及包含其的基板 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11242619B2 (zh) |
JP (1) | JP7055183B2 (zh) |
KR (1) | KR102433117B1 (zh) |
CN (1) | CN112921370B (zh) |
TW (1) | TWI709667B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI746383B (zh) * | 2021-03-05 | 2021-11-11 | 國立陽明交通大學 | 摻雜金屬元素的奈米雙晶銅金屬層、包含其之基板及其製備方法 |
TWI803857B (zh) * | 2021-04-23 | 2023-06-01 | 樂鑫材料科技股份有限公司 | 接合結構及其形成方法 |
TWI766752B (zh) * | 2021-07-08 | 2022-06-01 | 國立陽明交通大學 | 鋰電池電極及包含其的鋰電池 |
US11634830B2 (en) | 2021-08-25 | 2023-04-25 | Applied Materials, Inc. | Electrochemical depositions of nanotwin copper materials |
CN114086224B (zh) * | 2021-12-21 | 2023-04-28 | 中国科学院深圳先进技术研究院 | 一种孪晶铜材料及制备方法和用途 |
CN114908386B (zh) * | 2022-05-18 | 2024-05-28 | 江西理工大学 | 极薄多层结构型纳米孪晶铜箔及其制备方法和应用 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201347111A (zh) * | 2012-05-10 | 2013-11-16 | Univ Nat Chiao Tung | 包含有具優選方向成長之Cu6Sn5晶粒之電性連接結構及其製備方法 |
TW201432828A (zh) * | 2013-02-07 | 2014-08-16 | Univ Nat Chiao Tung | 電性連接結構及其製備方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7736448B2 (en) | 2002-11-01 | 2010-06-15 | Institute Of Metal Research Chinese Academy Of Sciences | Nano icrystals copper material with super high strength and conductivity and method of preparing thereof |
JP2004179297A (ja) * | 2002-11-26 | 2004-06-24 | Renesas Technology Corp | 半導体集積回路装置 |
JP2006108464A (ja) * | 2004-10-07 | 2006-04-20 | Kyoden:Kk | 鉛フリーはんだに対応した銅配線基板 |
TWI432613B (zh) * | 2011-11-16 | 2014-04-01 | Univ Nat Chiao Tung | 電鍍沉積之奈米雙晶銅金屬層及其製備方法 |
WO2014030779A1 (ko) * | 2012-08-22 | 2014-02-27 | 한양대학교 에리카산학협력단 | 나노쌍정 구조가 형성된 구리재료의 형성방법 및 이에 의해 제조된 구리재료 |
TWI455663B (zh) * | 2012-10-16 | 2014-10-01 | Univ Nat Chiao Tung | 具有雙晶銅線路層之電路板及其製作方法 |
CN108677213B (zh) * | 2018-05-31 | 2021-01-12 | 中国科学院金属研究所 | 一种通过改变金属材料梯度纳米孪晶结构提高材料力学性能的方法 |
US10985378B2 (en) * | 2018-09-12 | 2021-04-20 | Industrial Technology Research Institute | Electrolyzed copper foil and current collector of energy storage device |
TWI731293B (zh) * | 2019-01-18 | 2021-06-21 | 元智大學 | 奈米雙晶結構 |
-
2019
- 2019-12-06 TW TW108144788A patent/TWI709667B/zh active
-
2020
- 2020-10-22 CN CN202011140407.6A patent/CN112921370B/zh active Active
- 2020-11-13 US US17/097,033 patent/US11242619B2/en active Active
- 2020-11-26 JP JP2020195994A patent/JP7055183B2/ja active Active
- 2020-12-03 KR KR1020200167881A patent/KR102433117B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201347111A (zh) * | 2012-05-10 | 2013-11-16 | Univ Nat Chiao Tung | 包含有具優選方向成長之Cu6Sn5晶粒之電性連接結構及其製備方法 |
TW201432828A (zh) * | 2013-02-07 | 2014-08-16 | Univ Nat Chiao Tung | 電性連接結構及其製備方法 |
Also Published As
Publication number | Publication date |
---|---|
TW202122639A (zh) | 2021-06-16 |
US11242619B2 (en) | 2022-02-08 |
JP2021105211A (ja) | 2021-07-26 |
US20210172086A1 (en) | 2021-06-10 |
CN112921370B (zh) | 2024-04-19 |
KR102433117B1 (ko) | 2022-08-16 |
CN112921370A (zh) | 2021-06-08 |
KR20210072709A (ko) | 2021-06-17 |
JP7055183B2 (ja) | 2022-04-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI709667B (zh) | 奈米雙晶銅金屬層及其製備方法及包含其的基板 | |
CN111463185B (zh) | 纳米双晶结构 | |
TWI432613B (zh) | 電鍍沉積之奈米雙晶銅金屬層及其製備方法 | |
JP2015029027A (ja) | プリント配線板 | |
CN103730445A (zh) | 具有双晶铜线路层的电路板及其制作方法 | |
JP6900621B2 (ja) | ウェハレベルパッケージにおけるシリカ貫通電極の銅配線材に用いる銅電気めっき液及び電気めっき方法 | |
TWI521104B (zh) | 奈米雙晶鎳金屬層、其製備方法、及包含其之電性連接結構、基板及封裝結構 | |
CN104419983A (zh) | 单晶铜、其制备方法及包含其的基板 | |
KR101141923B1 (ko) | 이중 전기도금법을 이용한 전기도금법 및 이로부터 형성되는 금속 박막 | |
JP2013053362A (ja) | エッチング性に優れた回路形成用銅箔、この銅箔を使用した銅張積層板及びプリント配線板 | |
US11578417B2 (en) | Nano-twinned crystal film prepared by water/alcohol-soluble organic additives and method of fabricating the same | |
JP4354139B2 (ja) | 配線基板の製造方法 | |
TWI836253B (zh) | 利用水/醇溶性有機添加劑製備之奈米雙晶層及其製備方法 | |
KR101596437B1 (ko) | 플립칩 패키지 구리 필라의 제조 방법과 이를 위한 동계 전기도금액 | |
KR102559954B1 (ko) | 고연신율 금속박 제조방법 및 고연신율 금속박 | |
US20230220517A1 (en) | NANO-TWINNED Cu-Ni ALLOY LAYER AND METHOD FOR MANUFACTURING THE SAME | |
TWI814182B (zh) | 複合銅層及其製備方法 | |
US20220301980A1 (en) | Through substrate via structure and manufacturing method thereof, redistribution layer structure and manufacturing method thereof | |
TW202144622A (zh) | 利用水/醇溶性有機添加劑製備之奈米雙晶層及其製備方法 | |
Liu et al. | Influence of macroscale dimension on the electrocrystallization of Cu pad and redistributed layer in advanced packaging | |
JP2016132822A (ja) | 電気銅メッキ浴及び電気銅メッキ装置、並びに電気銅メッキ方法 | |
US20180355499A1 (en) | Manufacturing method of ultra-large copper grains without heat treatment | |
WO2017199835A1 (ja) | 電解ニッケル(合金)めっき液 | |
Feng et al. | Effect of leveler on microstructure and stress of electroplated copper for TSV application | |
CN115573009A (zh) | 高深宽比tsv结构、其制备方法与应用 |