TWI709006B - Pattern drawing device and pattern drawing method - Google Patents
Pattern drawing device and pattern drawing method Download PDFInfo
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/24—Curved surfaces
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
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Abstract
基板處理裝置,係以藉由複數個描繪單元之各描繪線在基板上描繪之圖案彼此能隨著基板往長條方向之移動而在基板之寬度方向接合之方式,將複數個描繪單元配置於基板之寬度方向。控制部,預先儲存關於藉由複數個描繪單元之各個形成在基板上之描繪線彼此之位置關係之校準資訊,且根據該校準資訊與從移動測量裝置輸出之移動資訊,調整藉由複數個描繪單元之各個之描繪束形成在基板上之圖案之描繪位置。The substrate processing device is a method in which the patterns drawn on the substrate by the drawing lines of the multiple drawing units can be joined in the width direction of the substrate as the substrate moves in the longitudinal direction, and the multiple drawing units are arranged in the The width direction of the substrate. The control unit pre-stores calibration information about the positional relationship between the drawing lines formed on the substrate by each of the plurality of drawing units, and adjusts by the plurality of drawing lines based on the calibration information and the movement information output from the mobile measuring device The drawing position of the pattern formed on the substrate by the drawing beam of each unit.
Description
本發明係關於用以在基板上形成細微電子元件之構造體之基板處理裝置、元件製造方法及基板處理方法。The present invention relates to a substrate processing apparatus, a device manufacturing method, and a substrate processing method for forming a structure of microelectronic components on a substrate.
作為習知基板處理裝置,有一種在片狀媒體(基板)上之既定位置進行描繪的製造裝置廣為人知(例如,參照專利文獻1)。專利文獻1中記載之製造裝置,係對於寬度方向易伸縮之可撓性長條片狀基板,藉檢測對準標記以測量片狀基板之伸縮,依據伸縮修正描繪位置(加工位置)。As a conventional substrate processing apparatus, there is a manufacturing apparatus that performs drawing at a predetermined position on a sheet medium (substrate) (for example, refer to Patent Document 1). The manufacturing device described in
專利文獻1:日本特開2010-91990號公報Patent Document 1: Japanese Patent Application Publication No. 2010-91990
於專利文獻1之製造裝置,係藉由一邊將基板往搬送方向搬送、一邊切換空間調變元件(DMD:Digital Micro mirror Device)據以進行曝光,以複數個描繪單元將圖案描繪於基板。於專利文獻1之製造裝置,雖係將於基板之寬度方向相鄰之圖案彼此以複數個描繪單元加以接合曝光,但為抑制接合曝光之誤差,係反饋(feedback)進行測試(test)曝光與顯影所生成之在接合部之圖案之位置誤差的測量結果。然而,包含此種測試曝光、顯影、測量等作業之反饋步驟,雖亦視其頻度,但卻得暫時停止製造線,不僅降低製品之生產性、亦有可能產生基板之浪費。In the manufacturing device of
本發明之態樣係有鑑於上述課題而生,其目的在提供一種即使是使用複數個描繪單元於基板之寬度方向接合圖案以進行曝光(描繪)之情形時,亦能降低圖案彼此之接合誤差,而能於基板高精度安定的描繪大面積圖案之基板處理裝置、元件製造方法及基板處理方法。The aspect of the present invention was developed in view of the above-mentioned problems, and its purpose is to provide a method that can reduce the bonding error between patterns even when a plurality of drawing units are used to join patterns in the width direction of the substrate for exposure (drawing). , And a substrate processing device, device manufacturing method, and substrate processing method that can draw large-area patterns on a substrate with high precision and stability.
本發明第1態樣之基板處理裝置,具備:搬送裝置,將長條片狀基板之一部分一邊以具有往該長條方向彎曲之支承面之支承構件支承一邊使其往該長條方向移動;描繪裝置,包含對以該支承面支承之該基板一邊投射已調變之描繪束、一邊在與該長條方向交叉之該基板之寬度方向於較該基板之寬度窄之範圍掃描並沿著以該掃描所得之描繪線描繪既定圖案之複數個描繪單元,以該複數個描繪單元之各描繪線描繪於該基板上之圖案彼此隨著該基板往長條方向之移動而於該基板之寬度方向接合之方式,將該複數個描繪單元配置於該基板之寬度方向;移動測量裝置,輸出對應該搬送裝置進行之該基板之移動量或移動位置之移動資訊;以及控制部,預先儲存關於藉由該複數個描繪單元之各個形成在該基板上之該描繪線彼此之位置關係之校準資訊,且根據該校準資訊與從該移動測量裝置輸出之移動資訊,調整藉由該複數個描繪單元之各個之該描繪束形成在該基板上之圖案之描繪位置。The substrate processing apparatus according to the first aspect of the present invention includes: a conveying device that moves a part of the long sheet-like substrate in the long direction while being supported by a supporting member having a supporting surface that is curved in the long direction; The drawing device includes projecting a modulated drawing beam on the substrate supported by the supporting surface, and scanning along the width direction of the substrate crossing the longitudinal direction in a narrower range than the width of the substrate. The drawing lines obtained by the scanning describe a plurality of drawing units of a predetermined pattern, and the patterns drawn on the substrate by the drawing lines of the plurality of drawing units are in the width direction of the substrate along with the movement of the substrate in the longitudinal direction In the joining method, the plurality of drawing units are arranged in the width direction of the substrate; the measuring device is moved to output the movement information corresponding to the movement amount or the movement position of the substrate by the conveying device; and the control unit prestores information about the The calibration information of the positional relationship between the drawing lines formed on the substrate for each of the plurality of drawing units, and according to the calibration information and the movement information output from the mobile measuring device, each of the drawing units by the plurality of drawing units is adjusted The drawing position of the pattern formed by the drawing beam on the substrate.
本發明第2態樣之元件製造方法,使用本發明第1態樣之基板處理裝置以將該圖案形成於該基板。The device manufacturing method of the second aspect of the present invention uses the substrate processing apparatus of the first aspect of the present invention to form the pattern on the substrate.
本發明第3態樣之基板處理方法,係將電子元件之圖案描繪在長條片狀基板,其特徵在於,包含:以既定速度將該片狀基板往長條方向搬送之動作;使從脈衝光源裝置以頻率Fz脈衝振盪之紫外波長域之光束在該片狀基板之表面聚光成點光,且藉由光掃描器使該光束振盪,使該點光沿著往與該長條方向交叉之寬度方向延伸之長度LBL之描繪線掃描之動作;以及在該點光掃描之期間,根據對應該圖案之描繪資料調變該點光之強度之動作;設該光束之一個脈衝之聚光形成之點光與下一個脈衝之聚光形成之點光沿著該描繪線之間隔為CXs、該點光沿著該描繪線之實效尺寸為Xs、該點光掃描該長度LBL之掃描時間為Ts時,設定成滿足Xs>CXs且Fz>LBL/(Ts・Xs)之關係。The substrate processing method of the third aspect of the present invention draws the pattern of the electronic component on the elongated sheet substrate, and is characterized in that it includes: an action of transporting the sheet substrate in the elongate direction at a predetermined speed; The light source device condenses a light beam in the ultraviolet wavelength range with a frequency Fz pulse oscillation on the surface of the sheet substrate into a point light, and the light beam is oscillated by an optical scanner so that the point light crosses the strip direction along the direction The action of scanning the line of drawing of the length LBL extending in the width direction; and during the scanning of the spot light, the action of adjusting the intensity of the spot light according to the drawing data corresponding to the pattern; set a pulse of the beam of light to form The distance between the point light and the point light formed by the concentrated light of the next pulse along the traced line is CXs, the effective size of the point light along the traced line is Xs, and the scanning time of the point light scanning the length LBL is Ts When it is set to satisfy the relationship of Xs>CXs and Fz>LBL/(Ts・Xs).
本發明第4態樣之基板處理方法,係將電子元件之圖案描繪在長條片狀基板,其特徵在於,包含:以既定速度將該片狀基板往長條方向搬送之步驟;使從脈衝光源裝置以頻率Fz脈衝振盪之紫外波長域之光束在該片狀基板之表面聚光成點光,且使該點光沿著往與該片狀基板之長條方向交叉之寬度方向延伸之描繪線掃描之步驟;以及在該點光掃描之期間,根據該圖案分割成像素單位之描繪資料,藉由光切換元件調變該光束之強度之步驟;將該光切換元件調變時之回應頻率Fss與該光束之脈衝振盪之頻率Fz設定成Fz>Fss之關係。The substrate processing method of the fourth aspect of the present invention draws the pattern of the electronic component on the elongated sheet substrate, and is characterized in that it includes the step of transporting the sheet substrate in the elongate direction at a predetermined speed; The light source device condenses a light beam in the ultraviolet wavelength range with a frequency Fz pulse oscillating on the surface of the sheet substrate into a point light, and makes the point light extend along the width direction intersecting the longitudinal direction of the sheet substrate The step of line scanning; and during the point light scanning, the pattern is divided into pixel units according to the drawing data, and the light switching element is used to modulate the intensity of the light beam; the response frequency when the light switching element is modulated Fss and the pulse oscillation frequency Fz of the beam are set to a relationship of Fz>Fss.
根據本發明之態樣,能提供一種降低使用複數個描繪單元於基板之寬度方向接合圖案進行曝光時之接合誤差,而能對基板合適地進行使用複數個描繪單元進行之描繪的基板處理裝置、元件製造方法。再者,可提供一種提高一個描繪單元沿著描繪線描繪圖案時之描繪精度(曝光量之均勻性等)或忠實度之基板處理方法。According to an aspect of the present invention, it is possible to provide a substrate processing apparatus that reduces the bonding error during exposure of a bonding pattern in the width direction of a substrate using a plurality of drawing units, and can appropriately perform drawing on a substrate using a plurality of drawing units, Component manufacturing method. Furthermore, it is possible to provide a substrate processing method that improves the drawing accuracy (uniformity of exposure, etc.) or fidelity when a drawing unit draws a pattern along a drawing line.
針對用以實施本發明之形態(實施形態),一邊參照圖面一邊詳細説明。本發明當然不受限於以下實施形態記載之内容。又,以下記載之構成要素中,包含業者容易想定者、以及實質相同之物。此外,以下記載之構成要素可適當組合。又,在不脫離本發明要旨範圍內,可進行構成要素之各種省略、置換或變更。The form (embodiment) for implementing the present invention will be described in detail with reference to the drawings. Of course, the present invention is not limited to the content described in the following embodiments. In addition, the constituent elements described below include those that are easy to imagine by the industry and those that are substantially the same. In addition, the constituent elements described below can be combined as appropriate. In addition, various omissions, substitutions, or changes of constituent elements can be made without departing from the scope of the present invention.
[第1實施形態]
圖1係顯示第1實施形態之曝光裝置(基板處理裝置)之全體構成的圖。第1實施形態之基板處理裝置係對基板P施以曝光處理的曝光裝置EX,曝光裝置EX組裝在對曝光後基板P施以各種處理以製造元件之元件製造系統1中。首先,説明元件製造系統1。[First Embodiment]
FIG. 1 is a diagram showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment. The substrate processing apparatus of the first embodiment is an exposure apparatus EX that applies exposure processing to a substrate P, and the exposure device EX is incorporated in a
<元件製造系統>
元件製造系統1,係製造作為元件之可撓性顯示器的生產線(可撓性顯示器製造線)。可撓性顯示器,例如有機EL顯示器等。此元件製造系統1,係將可撓性(flexible)長條基板P捲成筒狀之未圖示之供應用捲筒送出該基板P,在對送出之基板P連續的施以各種處理後,將處理後之基板P作為可撓性元件捲繞於未圖示之回收用捲筒之所謂的捲對捲(Ro11 to Ro11)方式。於第1實施形態之元件製造系統1,係將薄膜狀之片狀基板P從供應用捲筒送出,從供應用捲筒送出之基板P依序經處理裝置U1、曝光裝置EX、處理裝置U2後,捲繞於回收用捲筒之例。此處,說明元件製造系統1之處理對象的基板P。<Component manufacturing system>
The
基板P,係由例如樹脂薄膜、不鏽鋼等之金屬或合金構成之箔(foil)等。樹脂薄膜之材質,可使用包含例如聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯乙烯基共聚物樹脂、聚氯乙烯樹脂、纖維素樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、聚乙烯醇樹脂等材料中之一種或二種以上者。The substrate P is a foil made of metal or alloy such as resin film, stainless steel, and the like. The material of the resin film includes, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, and polycarbonate. Ester resin, polystyrene resin, polyvinyl alcohol resin and other materials one or more than two kinds.
基板P,以選擇例如熱膨脹係數顯著不大、可實質忽視在對基板P實施之各種處理中因受熱而產生之變形量者較佳。熱膨脹係數,可藉由例如將無機填充物混合於樹脂薄膜據以設定為較對應處理温度等之閾值小。無機填充物,可以是例如氧化鈦、氧化鋅、氧化鋁、氧化矽等。又,基板P可以是以浮製法等製造之厚度100μm程度之極薄玻璃之單層體、或於此極薄玻璃貼合上述樹脂薄膜、或箔等的積層體。For the substrate P, it is better to select, for example, the thermal expansion coefficient is not significant, and the amount of deformation due to heat during various treatments performed on the substrate P can be substantially ignored. The coefficient of thermal expansion can be set to be smaller than the threshold value corresponding to the processing temperature, for example, by mixing inorganic fillers in the resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, aluminum oxide, silicon oxide, and the like. In addition, the substrate P may be a single layer of ultra-thin glass with a thickness of about 100 μm manufactured by a float method or the like, or a laminate of the above-mentioned resin film, foil, etc. bonded to this ultra-thin glass.
以此方式構成之基板P,被捲繞成捲筒狀而成為供應用捲筒,此供應用捲筒被裝著於元件製造系統1。裝有供應用捲筒之元件製造系統1,對從供應用捲筒往長條方向送出之基板P反覆實行用以製造元件之各種處理。因此,於處理後之基板P上,於長條方向以一定間隔連接之狀態形成有複數個電子元件(顯示面板、印刷基板等)用之圖案。也就是說,從供應用捲筒送出之基板P,為多面用之基板。此外,基板P亦可以是預先藉由既定前處理,將其表面予以改質而活性化者、或於表面形成用以精密圖案化之微細間隔壁構造(以壓印(imprint)法形成之凹凸構造)者。The substrate P configured in this manner is wound into a roll shape to become a supply roll, and this supply roll is mounted in the
經處理後之基板P,被捲繞成捲筒狀作為回收用捲筒加以回收。回收用捲筒,被安裝於未圖示之切割裝置。裝有回收用捲筒之切割裝置,將處理後之基板P分割(切割)成各個元件,據以成為複數個元件。基板P之尺寸,例如,寬度方向(短邊之方向)之尺寸為10cm~2m程度、而長度方向(長條之方向)尺寸則為10m以上。當然,基板P之尺寸不限於上述尺寸The processed substrate P is wound into a roll shape to be recovered as a recovery roll. The recycling reel is installed in a cutting device not shown. Equipped with a cutting device for recycling rolls, the processed substrate P is divided (cut) into individual components, which are then multiple components. The size of the substrate P, for example, the size in the width direction (the direction of the short side) is about 10 cm to 2 m, and the size in the length direction (the direction of the long strip) is more than 10 m. Of course, the size of the substrate P is not limited to the above size
接著,參照圖1説明元件製造系統1。元件製造系統1具備處理裝置U1、曝光裝置EX、以及處理裝置U2。又,圖1,係X方向、Y方向及Z方向成正交之正交座標系。X方向,係於水平面内從處理裝置U1經曝光裝置EX朝向處理裝置U2之方向。Y方向,係於水平面内與X方向正交之方向,為基板P之寬度方向。Z方向,係X方向與Y方向正交之方向(鉛直方向),XY面,係與設置曝光裝置EX之製造線之設置面E平行。Next, the
處理裝置U1,係對於曝光裝置EX進行曝光處理之基板P進行前製程之處理(前處理)。處理裝置U1,將經前處理之基板P送向曝光裝置EX。此時,被送至曝光裝置EX之基板P,係其表面形成有感光性機能層(光感應層)之基板(感光基板)P。The processing device U1 is a pre-processing (pre-processing) for the substrate P subjected to the exposure processing by the exposure device EX. The processing device U1 sends the pre-processed substrate P to the exposure device EX. At this time, the substrate P sent to the exposure apparatus EX is a substrate (photosensitive substrate) P on which a photosensitive functional layer (photosensitive layer) is formed.
此處,感光性機能層係作為溶液塗於基板P上,經乾燥而成為層(膜)。典型的感光性機能層,有光阻劑作為顯影處理後無需之材料,在受紫外線照射之部分之親撥液性經改質之感光性矽烷耦合劑(SAM)、或受紫外線照射之部分露出鍍敷還元基之感光性還元材等。作為感光性機能層使用感光性矽烷耦合劑時,由於基板P上被紫外線曝光之圖案部分由撥液性改質為親液性,因此於成為親液性之部分上選擇性塗布導電性墨水(含有銀或銅等導電性奈米粒子之墨水),以形成圖案層。作為感光性機能層使用感光性還元材時,由於會在基板P上被紫外線曝光之圖案部分露出鍍敷還元基,因此,曝光後,立即將基板P浸漬於含鈀離子等之鍍敷液中一定時間,以形成(析出)鈀之圖案層。Here, the photosensitive functional layer is coated on the substrate P as a solution, and dried to become a layer (film). A typical photosensitive functional layer has a photoresist as a material that is not needed after development. The liquid-repellent modified photosensitive silane coupling agent (SAM) in the part irradiated by ultraviolet rays or the part irradiated by ultraviolet rays is exposed Photosensitive reduction materials based on plating reduction. When a photosensitive silane coupling agent is used as the photosensitive functional layer, since the pattern portion on the substrate P exposed to ultraviolet rays is changed from liquid repellency to lyophilic, conductive ink is selectively coated on the lyophilic portion ( Ink containing conductive nano particles such as silver or copper) to form a pattern layer. When a photosensitive reducing material is used as the photosensitive functional layer, the plating reducing base will be exposed on the pattern portion of the substrate P exposed by ultraviolet rays. Therefore, immediately after exposure, the substrate P is immersed in a plating solution containing palladium ions or the like For a certain period of time, a patterned layer of palladium is formed (precipitated).
曝光裝置EX,對從處理裝置U1供應之基板P描繪例如顯示器面板用之各種電路或各種配線等之圖案。詳情留待後敘,此曝光裝置EX,係將從複數個描繪單元UW1~UW5之各個投射向基板P之光束LB(以下,亦稱描繪光束LB。)之各個掃描於既定掃描方向所得之複數個描繪線LL1~LL5,於基板P曝光出既定圖案。The exposure device EX draws patterns such as various circuits or various wirings for display panels on the substrate P supplied from the processing device U1. The details will be described later. This exposure device EX is a plurality of light beams LB (hereinafter also referred to as drawing light beams LB.) projected from each of the plurality of drawing units UW1 to UW5 to the substrate P and scanned in a predetermined scanning direction. The lines LL1 to LL5 are drawn, and a predetermined pattern is exposed on the substrate P.
處理裝置U2承接於曝光裝置EX曝光處理後之基板P,對基板P進行後製程之處理(後處理)。處理裝置U2,在基板P之感光性機能層為光阻劑之情形時,進行在基板P之玻璃轉移温度以下之後烘烤處理、顯影處理、洗淨處理、乾燥處理等。又,在基板P之感光性機能層為感光性鍍敷還元材之情形時,處理裝置U2則進行無電電鍍處理、洗淨處理、乾燥處理等。此外,在基板P之感光性機能層為感光性矽烷耦合劑之情形時,處理裝置U2係進行對基板P上成為親液性之部分之液狀墨水之選擇性塗布處理、乾燥處理等。經由此種處理裝置U2,於基板P上形成元件之圖案層。The processing device U2 receives the substrate P after exposure processing by the exposure device EX, and performs post-process processing (post-processing) on the substrate P. The processing device U2, when the photosensitive functional layer of the substrate P is a photoresist, performs post-baking processing, development processing, cleaning processing, drying processing, etc., below the glass transition temperature of the substrate P. In addition, when the photosensitive functional layer of the substrate P is a photosensitive plating reduction material, the processing device U2 performs electroless plating, cleaning, drying, etc. In addition, when the photosensitive function layer of the substrate P is a photosensitive silane coupling agent, the processing device U2 performs selective coating treatment, drying treatment, etc. of the liquid ink of the lyophilic portion on the substrate P. Through this processing device U2, a patterned layer of the device is formed on the substrate P.
<曝光裝置(基板處理裝置)> 接著,參照圖1至圖10,說明曝光裝置EX。圖2係顯示圖1之曝光裝置主要部之配置的立體圖。圖3係顯示在基板上之對準顯微鏡與描繪線之配置關係的圖。圖4係顯示圖1之曝光裝置之旋轉圓筒及描繪裝置(描繪單元)之構成的圖。圖5係顯示圖1之曝光裝置主要部之配置的俯視圖。圖6係顯示圖1之曝光裝置之分歧光學系之構成的立體圖。圖7係顯示圖1之曝光裝置之複數個描繪單元内之掃描器之配置關係的圖。圖8係說明用以消除因掃描器反射面之傾斜造成之描繪線偏移之光學構成的圖。圖9係顯示在基板上之對準顯微鏡與描繪線之編碼器讀頭之配置關係的立體圖。圖10係顯示圖1之曝光裝置之旋轉圓筒表面構造之一例的立體圖。<Exposure equipment (substrate processing equipment)> Next, the exposure apparatus EX will be described with reference to FIGS. 1 to 10. Fig. 2 is a perspective view showing the configuration of the main parts of the exposure apparatus of Fig. 1. Fig. 3 is a diagram showing the arrangement relationship between the alignment microscope and the drawing line on the substrate. 4 is a diagram showing the configuration of the rotating cylinder and the drawing device (drawing unit) of the exposure device of FIG. 1. Fig. 5 is a plan view showing the arrangement of the main parts of the exposure apparatus of Fig. 1; FIG. 6 is a perspective view showing the structure of a branched optical system of the exposure device of FIG. 1. FIG. FIG. 7 is a diagram showing the arrangement relationship of scanners in a plurality of drawing units of the exposure apparatus of FIG. 1. FIG. FIG. 8 is a diagram illustrating an optical structure used to eliminate the deviation of the drawing line caused by the tilt of the reflective surface of the scanner. Fig. 9 is a perspective view showing the arrangement relationship between the alignment microscope on the substrate and the encoder read head for drawing lines. Fig. 10 is a perspective view showing an example of the surface structure of a rotating cylinder of the exposure apparatus of Fig. 1.
如圖1所示,曝光裝置EX,係不使用光罩之曝光裝置、所謂的無光罩方式的描繪曝光裝置,於本實施形態,係藉由將基板P一邊以一定速度連續往搬送方向(長條方向)搬送、一邊將描繪光束LB之點(spot)光於既定掃描方向(基板P之寬度方向)高速掃描,據以進行於基板P表面之描繪,於基板P上形成既定圖案之逐線(raster scan)方式的直接描繪曝光裝置。As shown in Fig. 1, the exposure apparatus EX is an exposure apparatus that does not use a mask, a so-called maskless drawing exposure apparatus. In this embodiment, the substrate P is continuously moved in the conveying direction at a constant speed ( The longitudinal direction) is conveyed, and the spot light of the drawing beam LB is scanned at a high speed in the predetermined scanning direction (the width direction of the substrate P), and the drawing on the surface of the substrate P is performed accordingly, and the predetermined pattern is formed on the substrate P. Line (raster scan) direct drawing exposure device.
如圖1所示,曝光裝置EX具備描繪裝置11、基板搬送機構12、對準顯微鏡AM1、AM2、以及控制部16。描繪裝置11具備複數個描繪單元UW1~UW5。描繪裝置11,在被作為基板搬送機構12一部分之圓筒狀旋轉圓筒DR之外周面上方緊貼支承之狀態下搬送之基板P之一部分,藉由複數個描繪單元UW1~UW5描繪既定圖案。基板搬送機構12,將從前製程之處理裝置U1搬送而來之基板P,以既定速度往後製程之處理裝置U2搬送。對準顯微鏡AM1、AM2,為進行待描繪於基板P上之圖案與基板P之相對的位置對準,檢測預先形成在基板P之對準標記等。包含電腦、微電腦、CPU、FPGA等之控制部16,控制曝光裝置EX之各部,使各部實施處理。控制部16可以是控制元件製造系統1之上位控制裝置之一部分或全部。又,控制部16受上位控制裝置控制。上位控制裝置,可以是例如管理生產線之主電腦等之其他裝置。As shown in FIG. 1, the exposure apparatus EX includes a
又,如圖2所示,曝光裝置EX具備支承描繪裝置11及基板搬送機構12之至少一部(旋轉圓筒DR等)之裝置框架13,於該裝置框架13安裝有檢測旋轉圓筒DR之旋轉角度位置及旋轉速度、旋轉軸方向之變位等的旋轉光束點光SP位置檢測機構(圖4及圖9所示之編碼器讀頭等)、與圖1(或圖3、圖9)所示之對準顯微鏡AM1、AM2等。再者,於曝光裝置EX内,如圖4、圖5所示的設有射出作為描繪光束LB之紫外雷射光(脈衝光)的光源裝置CNT。此曝光裝置EX,將從光源裝置CNT射出之描繪光束LB,以大致均等光量(照度)分配至構成描繪裝置11之複數個描繪單元UW1~UW5之各個。In addition, as shown in FIG. 2, the exposure apparatus EX includes a
如圖1所示,曝光裝置EX係收納在調溫室EVC内。調溫室EVC,透過被動或主動的防振單元SU1、SU2設置在製造工場之設置面(地面)E。防振單元SU1、SU2設在設置面E上,用以降低來自設置面E之振動。調溫室EVC,藉由將内部保持於既定温度,據以抑制在内部搬送之基板P因温度造成之形狀變化。As shown in Fig. 1, the exposure device EX is housed in the temperature control room EVC. The greenhouse EVC is installed on the installation surface (ground) E of the manufacturing workshop through passive or active anti-vibration units SU1 and SU2. The anti-vibration units SU1 and SU2 are installed on the installation surface E to reduce vibration from the installation surface E. The temperature-regulating EVC keeps the inside at a predetermined temperature, thereby suppressing the change in the shape of the substrate P conveyed inside due to temperature.
曝光裝置EX之基板搬送機構12,從基板P之搬送方向上游側起依序具有邊緣位置控制器EPC、驅動滾輪DR4、張力調整滾輪RT1、旋轉圓筒(圓筒圓筒)DR、張力調整滾輪RT2、驅動滾輪DR6、及驅動滾輪DR7。The
邊緣位置控制器EPC係調整從處理裝置U1搬送之基板P於寬度方向(Y方向)之位置。邊緣位置控制器EPC,以從處理裝置U1送來之基板P之寬度方向端部(邊緣)位置,能相對目標位置在±十數μm~數十μm程度之範圍內,而使基板P於寬度方向微動,修正基板P於寬度方向之位置。The edge position controller EPC adjusts the position of the substrate P conveyed from the processing device U1 in the width direction (Y direction). The edge position controller EPC uses the width direction end (edge) position of the substrate P sent from the processing unit U1 to be within the range of ± tens of μm to tens of μm relative to the target position, so that the substrate P is in the width The direction is slightly moved to correct the position of the substrate P in the width direction.
夾持方式之驅動滾輪DR4,一邊夾持從邊緣位置控制器EPC搬送而來之基板P之正反兩面一邊旋轉,將基板P送向搬送方向之下游側,以將基板P往旋轉圓筒DR搬送。旋轉圓筒DR,一邊使基板P上之圖案待曝光之部分緊貼於從延伸於Y方向之旋轉中心線(旋轉軸)AX2具一定半徑之圓筒狀外周面以加以支承、一邊繞旋轉中心線AX2旋轉,據以將基板P往長條方向搬送。The driving roller DR4 of the clamping method rotates while clamping the front and back sides of the substrate P transferred from the edge position controller EPC, and sends the substrate P to the downstream side in the conveying direction to transfer the substrate P to the rotating cylinder DR Transport. Rotate the cylinder DR, while supporting the part of the pattern on the substrate P to be exposed to the cylindrical outer peripheral surface with a certain radius from the rotation center line (rotation axis) AX2 extending in the Y direction, and around the rotation center The line AX2 rotates to transport the substrate P in the longitudinal direction.
為使此種旋轉圓筒DR繞旋轉中心線AX2旋轉,於旋轉圓筒DR之兩側設有與旋轉中心線AX2同軸之軸(shaft)部Sf2,軸部Sf2,如圖2所示,透過軸承被軸支於裝置框架13。於此軸部Sf2,賦予來自未圖示之驅動源(馬達及減速齒輪機構等)之旋轉力矩。又,將包含旋轉中心線AX2與YZ面平行之面,設為中心面p3。In order to make the rotating cylinder DR rotate around the rotation center line AX2, a shaft portion Sf2 and a shaft portion Sf2 that are coaxial with the rotation center line AX2 are provided on both sides of the rotation cylinder DR, as shown in Figure 2, through The bearing is supported by the
2組張力調整滾輪RT1、RT2,對被捲繞支承於旋轉圓筒DR之基板P賦予既定張力。2組夾持式驅動滾輪DR6、DR7於基板P之搬送方向相隔既定間隔配置,對曝光後之基板P賦予既定之鬆弛DL。藉由驅動滾輪DR6夾持搬送之基板P之上游側旋轉、驅動滾輪DR7夾持搬送之基板P之下游側旋轉,據以將基板P搬送向處理裝置U2。此時,基板P由於被賦予有鬆弛DL,因能吸收較驅動滾輪DR6在搬送方向下游側產生之基板P之搬送速度之變動,隔絕因搬送速度之變動對基板P造成之曝光處理之影響。The two sets of tension adjusting rollers RT1 and RT2 apply a predetermined tension to the substrate P wound and supported by the rotating cylinder DR. Two sets of clamping drive rollers DR6 and DR7 are arranged at a predetermined interval in the conveying direction of the substrate P, and a predetermined slack DL is given to the substrate P after exposure. The drive roller DR6 clamps and rotates the upstream side of the transported substrate P, and the drive roller DR7 rotates the downstream side of the transported substrate P, thereby transporting the substrate P to the processing device U2. At this time, since the substrate P is given a slack DL, it can absorb the change in the conveying speed of the substrate P on the downstream side of the driving roller DR6 in the conveying direction, and isolate the influence of the exposure processing of the substrate P due to the change in the conveying speed.
從而,基板搬送機構12,能對從處理裝置U1搬送而來之基板P,藉由邊緣位置控制器EPC調整於寬度方向之位置。基板搬送機構12,將寬度方向之位置經調整之基板P,藉由驅動滾輪DR4搬送至張力調整滾輪RT1,將通過張力調整滾輪RT1之基板P搬送至旋轉圓筒DR。基板搬送機構12,藉由使旋轉圓筒DR旋轉,據以將被支承於旋轉圓筒DR之基板P搬送向張力調整滾輪RT2。基板搬送機構12,將搬送至張力調整滾輪RT2之基板P搬送至驅動滾輪DR6,將搬送至驅動滾輪DR6之基板P搬送至驅動滾輪DR7。接著,基板搬送機構12藉由驅動滾輪DR6及驅動滾輪DR7,一邊對基板P賦予鬆弛DL、一邊將基板P搬送向處理裝置U2。Therefore, the
再次參照圖2,說明曝光裝置EX之裝置框架13。圖2中,X方向、Y方向及Z方向為一正交之正交座標系,係與圖1相同之正交座標系。2 again, the
如圖2所示,裝置框架13,從Z方向之下方側依序具有本體框架21、支承機構三點座22、第1光學平台23、移動機構24、以及第2光學平台25。本體框架21係透過防振單元SU1、SU2設置在設置面E上之部分。本體框架21,將旋轉圓筒DR及張力調整滾輪RT1(未圖示)、RT2軸支(支承)成可旋轉。第1光學平台23,設在旋轉圓筒DR之鉛直方向上方側,透過三點座22設置於本體框架21。三點座22,將第1光學平台23以3個支承點加以支承,於各支承點之Z方向位置(高度位置)可調整。因此,三點座22可將第1光學平台23之平台面相對水平面之傾斜調整為既定傾斜。又,於裝置框架13之組裝時,本體框架21與三點座22之間,可在XY面内,於X方向及Y方向進行位置調整。另一方面,於裝置框架13之組裝後,本體框架21與三點座22之間則成為在XY面内被固定之狀態(剛性狀態)。As shown in FIG. 2, the
第2光學平台25設在第1光學平台23之鉛直方向上方側,透過移動機構24設置於第1光學平台23。第2光學平台25,其平台面與第1光學平台23之平台面平行。於第2光學平台25,設有描繪裝置11之複數個描繪單元UW1~UW5。移動機構24,可在將第1光學平台23及第2光學平台25各個之平台面保持成平行之狀態下,以延伸於鉛直方向之既定旋轉軸I為中心,相對第1光學平台23使第2光學平台25精密的微幅旋轉。其旋轉範圍,例如係相對基準位置在±數百毫弧度程度,能以1~數毫弧度之分解能力進行角度設定之構造。又,移動機構24,亦具備可在將第1光學平台23及第2光學平台25各個之平台面保持於平行之狀態下,相對第1光學平台23使第2光學平台25於X方向及Y方向之至少一方精密的微幅移動的機構,可使旋轉軸I從基準位置往X方向或Y方向以μm級之分解能力微幅變位。此旋轉軸I,於基準位置,係於中心面p3内延伸於鉛直方向且通過捲繞在旋轉圓筒DR之基板P表面(順著圓周面彎曲之描繪面)内之既定點(基板P之寬度方向中點)(參照圖3)。藉由此種移動機構24,相對第1光學平台23使第2光學平台25旋轉或移動,即能一體的調整複數個描繪單元UW1~UW5相對旋轉圓筒DR、或被捲繞於旋轉圓筒DR之基板P之位置。The second optical table 25 is provided on the upper side of the first optical table 23 in the vertical direction, and the
接著,參照圖5說明光源裝置CNT。光源裝置CNT設置在裝置框架13之本體框架21上。光源裝置CNT射出投射於基板P之作為描繪光束LB之雷射光。光源裝置CNT,具有射出適於基板P上之感光性機能層之曝光之既定波長帶域、光活性作用強之紫外帶之光的光源。作為光源,可利用例如連續振盪、或以數KHz~數百MHz程度脈衝振盪出YAG之第三高次諧波雷射光(波長355nm)的雷射光源。Next, the light source device CNT will be described with reference to FIG. 5. The light source device CNT is arranged on the
光源裝置CNT具備雷射光產生部CU1及波長轉換部CU2。雷射光產生部CU1具備雷射光源OSC、以及光纖增幅器FB1、FB2。雷射光產生部CU1射出基本波雷射光Ls。光纖增幅器FB1、FB2將基本波雷射光Ls以光纖加以增幅。雷射光產生部CU1使增幅之基本波雷射光Lr射入波長轉換部CU2。於波長轉換部CU2設有波長轉換光學元件、分光鏡及偏光分束器、稜鏡等,藉由此等光(波長)選擇零件之使用取出第三高次諧波雷射波長355nm之雷射光(描繪光束LB)。此時,使發出種光之雷射光源OSC與系統時脈等同步進行脈衝點燈,光源裝置CNT即作為數KHz~數百MHz程度之脈衝光發出波長355nm之描繪光束LB。又,使用此種光纖增幅器之情形時,依據雷射光源OSC之脈衝驅動之態樣,可將最終輸出之雷射光(Lr及LB)之1脈衝發光時間控制成微微秒級。The light source device CNT includes a laser light generating unit CU1 and a wavelength conversion unit CU2. The laser light generating unit CU1 includes a laser light source OSC, and fiber amplifiers FB1 and FB2. The laser light generating unit CU1 emits the fundamental wave laser light Ls. The fiber amplifiers FB1 and FB2 amplify the basic wave laser light Ls with optical fibers. The laser light generating unit CU1 injects the amplified fundamental wave laser light Lr into the wavelength conversion unit CU2. The wavelength conversion part CU2 is equipped with a wavelength conversion optical element, a beam splitter, a polarizing beam splitter, a beam, etc., and the third harmonic laser with a wavelength of 355nm is extracted by the use of such light (wavelength) selection parts (Draw light beam LB). At this time, the laser light source OSC that emits seed light is pulsed in synchronization with the system clock, etc., and the light source device CNT emits a drawing beam LB with a wavelength of 355 nm as pulsed light of about several KHz to several hundred MHz. Moreover, when using this kind of fiber amplifier, according to the state of pulse driving of the laser light source OSC, the light emission time of one pulse of the final laser light (Lr and LB) can be controlled to the order of picoseconds.
又,作為光源,亦可利用例如具有紫外帶之輝線(g線、h線、i線等)之水銀燈等之燈光源、於波長450nm以下之紫外帶具有振盪峰值之雷射二極體、發光二極體(LED)等之固體光源、或發出遠紫外光(DUV光)之KrF準分子雷射光(波長248nm)、ArF準分子雷射光(波長193nm)、XeC1準分子雷射(波長308nm)等之氣體雷射光源。In addition, as a light source, for example, a mercury lamp with a bright line in the ultraviolet band (g-line, h-line, i-line, etc.), a laser diode with an oscillation peak in the ultraviolet band below 450nm, and a luminous Solid light sources such as diodes (LED), or KrF excimer laser light (wavelength 248nm) that emits far ultraviolet light (DUV light), ArF excimer laser light (wavelength 193nm), XeC1 excimer laser light (wavelength 308nm) Other gas laser light sources.
此處,從光源裝置CNT射出之描繪光束LB,如後述般,透過各描繪單元UW1~UW5内所設之偏光分束器PBS投射於基板P。一般而言,偏光分束器PBS會反射為S偏光之直線偏光的光束,而使為P偏光之直線偏光的光束穿透。因此,於光源裝置CNT,以射入偏光分束器PBS之描繪光束LB為射出直線偏光(S偏光)之光束的雷射光較佳。此外,由於雷射光之能量密度高,因此能適當的確保投射於基板P之光束之照度。Here, the drawing light beam LB emitted from the light source device CNT is projected on the substrate P through the polarization beam splitter PBS provided in each drawing unit UW1 to UW5 as described later. Generally speaking, the polarization beam splitter PBS reflects the linearly polarized light beam of S polarization, and transmits the linearly polarized light beam of P polarization. Therefore, in the light source device CNT, the drawing light beam LB that enters the polarizing beam splitter PBS is preferably a laser light that emits a linearly polarized (S-polarized) light beam. In addition, since the energy density of the laser light is high, the illuminance of the light beam projected on the substrate P can be appropriately ensured.
其次,針對曝光裝置EX之描繪裝置11,亦參照圖3加以説明。描繪裝置11係使用複數個描繪單元UW1~UW5之所謂的多光束型描繪裝置11。此描繪裝置11,將從光源裝置CNT射出之描繪光束LB分歧為複數條,並將分歧之複數個描繪光束LB沿著如圖3之基板P上之複數條(第1實施形態中例如為5條)描繪線LL1~LL5分別聚光為微小之點光(數μm徑)加以掃描。描繪裝置11,將以複數個描繪線LL1~LL5之各個在基板P上描繪之圖案彼此於基板P之寬度方向加以接合。首先,參照圖3,說明以描繪裝置11掃描複數個描繪光束LB據以在基板P上形成之複數條描繪線LL1~LL5(點光之掃描軌跡)。Next, the
如圖3所示,複數條描繪線LL1~LL5,夾著中心面p3於旋轉圓筒DR之周方向配置成2行。於旋轉方向上游側之基板P上,與Y軸平行的配置奇數號之第1描繪線LL1、第3描繪線LL3及第5描繪線LL5於旋轉方向下游側之基板P上,與Y軸平行的配置偶數號之第2描繪線LL2及第4描繪線LL4。As shown in FIG. 3, a plurality of drawing lines LL1 to LL5 are arranged in two rows in the circumferential direction of the rotating cylinder DR with the center plane p3 interposed therebetween. On the substrate P on the upstream side in the rotation direction, the odd-numbered first drawing line LL1, third drawing line LL3, and fifth drawing line LL5 are arranged parallel to the Y axis on the substrate P on the downstream side in the rotation direction, parallel to the Y axis The even-numbered second drawing line LL2 and the fourth drawing line LL4 are arranged.
各描繪線LL1~LL5於基板P之寬度方向(Y方向)、也就是說沿旋轉圓筒DR之旋轉中心線AX2大致平行形成,較基板P於寬度方向之長度短。嚴謹來說,各描繪線LL1~LL5,為在藉由基板搬送機構12以基準速度搬送基板P時,以複數條描繪線LL1~LL5所得之圖案之接合誤差為最小,可相對旋轉圓筒DR之旋轉中心線AX2延伸之方向(軸方向或寬度方向)傾斜既定角度分。The drawing lines LL1 to LL5 are formed substantially parallel to the width direction (Y direction) of the substrate P, that is, along the rotation center line AX2 of the rotating cylinder DR, and are shorter than the length of the substrate P in the width direction. Strictly speaking, each drawing line LL1 ~ LL5, when the substrate P is transported by the
奇數號之第1描繪線LL1、第3描繪線LL3及第5描繪線LL5,於旋轉圓筒DR之中心線AX2方向相距既定間隔配置。又,偶數號之第2描繪線LL2及第4描繪線LL4,於旋轉圓筒DR之中心線AX2方向相距既定間隔配置。,此時,第2描繪線LL2係於中心線AX2方向配置在第1描繪線LL1與第3描繪線LL3之間。同樣的,第3描繪線LL3係於中心線AX2方向配置在第2描繪線LL2與第4描繪線LL4之間。第4描繪線LL4於中心線AX2方向配置在第3描繪線LL3與第5描繪線LL5之間。此外,第1~第5描繪線LL1~LL5係配置成涵蓋描繪於基板P上之曝光區域A7之寬度方向(軸方向)全寬。The odd-numbered first drawing line LL1, third drawing line LL3, and fifth drawing line LL5 are arranged at predetermined intervals in the direction of the center line AX2 of the rotating cylinder DR. In addition, the even-numbered second drawing line LL2 and the fourth drawing line LL4 are arranged at predetermined intervals in the direction of the center line AX2 of the rotating cylinder DR. At this time, the second drawing line LL2 is arranged between the first drawing line LL1 and the third drawing line LL3 in the direction of the center line AX2. Similarly, the third drawing line LL3 is arranged between the second drawing line LL2 and the fourth drawing line LL4 in the direction of the center line AX2. The fourth drawing line LL4 is arranged between the third drawing line LL3 and the fifth drawing line LL5 in the direction of the center line AX2. In addition, the first to fifth drawing lines LL1 to LL5 are arranged so as to cover the full width of the exposure area A7 drawn on the substrate P in the width direction (axial direction).
沿著奇數號之第1描繪線LL1、第3描繪線LL3及第5描繪線LL5掃描之描繪光束LB之點光之掃描方向,為一維方向、相同方向。又,沿偶數號之第2描繪線LL2及第4描繪線LL4掃描之描繪光束LB之點光之掃描方向,為一維方向、相同方向。此時,沿奇數號描繪線LL1、LL3、LL5掃描之描繪光束LB之點光之掃描方向(+Y方向)與沿偶數號描繪線LL2、LL4掃描之描繪光束LB之點光之掃描方向(-Y方向),如圖3中之箭頭所示,為相反方向。此係因使描繪單元UW1~UW5之各個為相同構成,在使奇數號描繪單元與偶數號描繪單元於XY面内旋轉180°對向配置、且使設於各描繪單元UW1~UW5之作為光束掃描器之旋轉多邊形鏡(polygon mirror)旋轉於同一方向之故。因此,從基板P之搬送方向來看,奇數號描繪線LL3、LL5之描繪開始位置與偶數號描繪線LL2、LL4之描繪開始位置,係於Y方向以點光之徑尺寸以下之誤差相鄰接(或一致),同樣的,奇數號描繪線LL1、LL3之描繪結束位置與偶數號描繪線LL2、LL4之描繪結束位置,係於Y方向以點光之徑尺寸以下之誤差相鄰接(或一致)。The scanning direction of the point light of the drawing beam LB scanned along the odd-numbered first drawing line LL1, third drawing line LL3, and fifth drawing line LL5 is a one-dimensional direction and the same direction. In addition, the scanning direction of the point light of the drawing light beam LB scanned along the even-numbered second drawing line LL2 and the fourth drawing line LL4 is a one-dimensional direction and the same direction. At this time, the scanning direction (+Y direction) of the point light of the drawing beam LB scanned along the odd-numbered drawing lines LL1, LL3, LL5 and the scanning direction of the point light of the drawing beam LB scanned along the even-numbered drawing lines LL2, LL4 (- Y direction), as shown by the arrow in Figure 3, is the opposite direction. This is because each of the drawing units UW1 to UW5 has the same configuration, and the odd-numbered drawing unit and the even-numbered drawing unit are arranged in opposite directions in the XY plane by rotating 180°, and the drawing units UW1 to UW5 are arranged as light beams. The rotating polygon mirror of the scanner rotates in the same direction. Therefore, from the perspective of the conveying direction of the substrate P, the drawing start position of the odd-numbered drawing lines LL3 and LL5 and the drawing start position of the even-numbered drawing lines LL2 and LL4 are adjacent to each other in the Y direction with an error below the diameter of the spot light. Same (or the same). Similarly, the drawing end positions of the odd-numbered drawing lines LL1 and LL3 and the drawing end positions of the even-numbered drawing lines LL2 and LL4 are adjacent to each other in the Y direction with an error below the diameter of the spot light ( Or consistent).
如以上之説明,奇數號描繪線LL1、LL3、LL5之各個係在基板P上與旋轉圓筒DR之旋轉中心線AX2大致平行之方式,於基板P之寬度方向配置成一行。而偶數號描繪線LL2、LL4之各個係在基板P上與旋轉圓筒DR之旋轉中心線AX2大致平行之方式,於基板P之寬度方向配置成一行。As described above, each of the odd-numbered drawing lines LL1, LL3, and LL5 are arranged in a row in the width direction of the substrate P in such a way that they are substantially parallel to the rotation center line AX2 of the rotating cylinder DR on the substrate P. The even-numbered drawing lines LL2 and LL4 are arranged on the substrate P in such a way that they are substantially parallel to the rotation center line AX2 of the rotating cylinder DR, and are arranged in a row in the width direction of the substrate P.
其次,參照圖4至圖7說明描繪裝置11。描繪裝置11,具有上述複數個描繪單元UW1~UW5、將來自光源裝置CNT之描繪光束LB分歧後導向描繪單元UW1~UW5之分歧光學系SL、以及用以進行校準之校準檢測系31。Next, the
分歧光學系SL將從光源裝置CNT射出之描繪光束LB分歧為複數條,並將分歧之複數條描繪光束LB分別導向複數個描繪單元UW1~UW5。分歧光學系SL,具有將從光源裝置CNT射出之描繪光束LB分歧為2條之第1光學系41、以第1光學系41分歧之一描繪光束LB射入之第2光學系42、及以第1光學系41分歧之另一描繪光束LB射入之第3光學系43。又,於分歧光學系SL之第1光學系41中設有在與描繪光束LB之行進軸正交之面内使描繪光束LB2維橫移之光束位移機構44,於分歧光學系SL之第3光學系43中設有使描繪光束LB2維橫移之光束位移機構45。分歧光學系SL,其光源裝置CNT側之一部分設置於本體框架21,另一方面,描繪單元UW1~UW5側之另一部分則設置於第2光學平台25。The branching optical system SL branches the drawing light beam LB emitted from the light source device CNT into a plurality of light beams, and directs the branched drawing light beams LB to the plural drawing units UW1 to UW5, respectively. The branched optical system SL includes a first
第1光學系41,具有1/2波長板51、偏光鏡(偏光分束器)52、散光器(beam diffuser)53、第1反射鏡54、第1中繼透鏡55、第2中繼透鏡56、光束位移機構44、第2反射鏡57、第3反射鏡58、第4反射鏡59、以及第1分束器60。又,從圖4、圖5中不易理解各構件之配置關係,因此,亦參照圖6之立體圖加以説明。The first
如圖6所示,從光源裝置CNT往+X方向射出之描繪光束LB射入1/2波長板51。1/2波長板51在描繪光束LB之入射面内可旋轉。射入1/2波長板51之描繪光束LB,其偏光方向為對應1/2波長板51之旋轉位置(角度)的既定偏光方向。通過1/2波長板51之描繪光束LB射入偏光鏡52。偏光鏡52使描繪光束LB中所含之既定偏光方向之光成分穿透,另一方面則將之外之偏光方向之光成分反射向+Y方向。因此,以偏光鏡52反射之描繪光束LB之強度,可藉由1/2波長板51及偏光鏡52之協力動作,視1/2波長板51之旋轉位置加以調整。As shown in FIG. 6, the drawing light beam LB emitted in the +X direction from the light source device CNT is incident on the 1/2
穿透過偏光鏡52之描繪光束LB之一部分(不要的光成分)照射於散光器(捕光)53。散光器53吸收射入之描繪光束LB之部分光成分,以抑制該光成分漏至外部。進一步的,亦用在進行描繪光束LB通過之各種光學系之調整作業時,由於雷射功率在最大狀態下功率過強而有危險,為使散光器53能吸收描繪光束LB之較多光成分,而改變1/2波長板51之旋轉位置(角度),以使朝向描繪單元UW1~UW5之描繪光束LB之功率大幅衰減。A part of the drawing light beam LB (unnecessary light component) that has passed through the
被偏光鏡52反射向+Y方向之描繪光束LB,因第1反射鏡54而反射向+X方向,透過第1中繼透鏡55及第2中繼透鏡56射入光束位移機構44,到達第2反射鏡57。The drawing light beam LB reflected in the +Y direction by the
第1中繼透鏡55使來自光源裝置CNT之描繪光束LB(大致平行之光束)收斂形成光束腰,第2中繼透鏡56使收斂後發散之描繪光束LB再次成為平行光束。The
光束位移機構44,如圖6所示,包含沿描繪光束LB之行進方向(+X方向)配置之2片平行平面板(石英),該平行平面板之一設置成能繞與Y軸平行之軸傾斜,另一平行平面板則設置成稜繞與Z軸平行之軸傾斜。依據各平行平面板之傾斜角度,描繪光束LB於ZY面内橫移而從光束位移機構44射出。The
之後,描繪光束LB被第2反射鏡57反射向-Y方向,到達第3反射鏡58,再被第3反射鏡58反射向-Z方向而到達第4反射鏡59。藉由第4反射鏡59,描繪光束LB被反射向+Y方向而射入第1分束器60。第1分束器60將描繪光束LB之部分光量成分反射向-X方向以導向第2光學系42,並將描繪光束LB之其餘光量成分導向第3光學系43。本實施形態中,被導向第2光學系42之描繪光束LB在之後被分配於3個描繪單元UW1、UW3、UW5,被導向第3光學系43之描繪光束LB在之後被分配於2個描繪單元UW2、UW4。因此,第1分束器60在光分割面之反射率與穿透率之比以3:2(反射率60%、穿透率40%)較佳,但不一定非如此不可,亦可以是1:1。After that, the drawing light beam LB is reflected in the -Y direction by the
此處,第3反射鏡58與第4反射鏡59係在移動機構24之旋轉軸I上相距既定間隔設置。亦即,於第3反射鏡58反射而朝向第4反射鏡59之描繪光束LB(平行光束)之中心線,係設定成與旋轉軸I一致(成同軸)。Here, the third reflecting
又,包含第3反射鏡58至光源裝置CNT為止之構成(在圖4之Z方向上方側,以二點鍊線圍繞之部分)係設於本體框架21側,另一方面,包含第4反射鏡59至複數個描繪單元UW1~UW5之構成(在圖4之Z方向下方側,以二點鍊線圍繞之部分)係設於第2光學平台25側。由於第3反射鏡58與第4反射鏡59係設置成即使以移動機構24使第1光學平台23與第2光學平台25相對旋轉,描繪光束LB亦會與旋轉軸I同軸通過,因此從第4反射鏡59至第1分束器60之描繪光束LB之光路不會變更。從而,即使以移動機構24使第2光學平台25相對第1光學平台23旋轉,亦能將從設置在本體框架21側之光源裝置CNT射出之描繪光束LB,適當、安定的引導向設在第2光學平台25側之複數個描繪單元UW1~UW5。In addition, the structure including the
第2光學系42,將於第1光學系41之第1分束器60分歧之一方之描繪光束LB,分歧導向後述之奇數號描繪單元UW1、UW3、UW5。第2光學系42,具有第5反射鏡61、第2分束器62、第3分束器63、以及第6反射鏡64。The second
於第1光學系41之第1分束器60被反射向-X方向之描繪光束LB,被第5反射鏡61往-Y方向反射後,射入第2分束器62。射入第2分束器62之描繪光束LB,其一部分被反射向-Z方向,導向奇數號之1個描繪單元UW5(參照圖5)。穿透過第2分束器62之描繪光束LB射入第3分束器63。射入第3分束器63之描繪光束LB,其一部分被反射向-Z方向,導向奇數號之1個描繪單元UW3(參照圖5)。而穿透過第3分束器63之描繪光束LB之一部分被第6反射鏡64反射向-Z方向,導向奇數號之1個描繪單元UW1(參照圖5)。又,於第2光學系42,照射於奇數號描繪單元UW1、UW3、UW5之描繪光束LB,相對-Z方向略微傾斜。The drawing light beam LB reflected in the −X direction by the
又,為有效利用描繪光束LB之功率,使第2分束器62之反射率與穿透率之比接近1:2、第3分束器63之反射率與穿透率之比接近1:1較佳。In addition, in order to effectively utilize the power of the drawing light beam LB, the ratio of reflectivity to transmittance of the
另一方面,第3光學系43將於第1光學系41之第1分束器60分歧之另一方之描繪光束LB,分歧導向後述之偶數號描繪單元UW2、UW4。第3光學系43,具有第7反射鏡71、光束位移機構45、第8反射鏡72、第4分束器73、以及第9反射鏡74。On the other hand, the third
於第1光學系41之第1分束器60往+Y方向穿透之描繪光束LB,被第7反射鏡71反射向+X方向,穿透光束位移機構45後射入第8反射鏡72。光束位移機構45,係以和光束位移機構44同樣之可傾斜的2片平行平面板(石英)構成,使朝向第8反射鏡72往+X方向前進之描繪光束LB於ZY面内橫移。The drawing light beam LB transmitted in the +Y direction by the
被第8反射鏡72反射向-Y方向之描繪光束LB,射入第4分束器73。照射於第4分束器73之描繪光束LB,其一部分被反射向-Z方向,導向偶數號之1個描繪單元UW4(參照圖5)。穿透過第4分束器73之描繪光束LB,被第9反射鏡74反射向-Z方向,導向偶數號之1個描繪單元UW2。又,於第3光學系43,照射於偶數號描繪單元UW2、UW4之描繪光束LB,亦係相對-Z方向略微傾斜。The drawing light beam LB reflected in the −Y direction by the
如以上所述,於分歧光學系SL,朝向複數個描繪單元UW1~UW5,將來自光源裝置CNT之描繪光束LB分歧為複數條。此時,第1分束器60、第2分束器62、第3分束器63及第4分束器73,其反射率(穿透率)係視描繪光束LB之分歧數調整為適當的反射率,以使照射於複數個描繪單元UW1~UW5之描繪光束LB之光束強度為相同強度。As described above, in the branch optical system SL, the drawing light beam LB from the light source device CNT is branched into a plurality of drawing units UW1 to UW5. At this time, the reflectance (transmittance) of the
光束位移機構44配置在第2中繼透鏡56與第2反射鏡57之間。光束位移機構44可將在基板P上形成之描繪線LL1~LL5之所有位置,在基板P之描繪面内以μm級進行微調。The
又,光束位移機構45,可將基板P上形成之描繪線LL1~LL5中、偶數號之第2描繪線LL2及第4描繪線LL4於基板P之描繪面内以μm級進行微調。In addition, the
進一步參照圖4、圖5及圖7,說明複數個描繪單元UW1~UW5。如圖4(及圖1)所示,複數個描繪單元UW1~UW5係夾著中心面p3於旋轉圓筒DR之周方向配置成2行。複數個描繪單元UW1~UW5,於夾著中心面p3配置第1、第3、第5描繪線LL1、LL3、LL5之側(圖5之-X方向側),配置第1描繪單元UW1、第3描繪單元UW3及第5描繪單元UW5。第1描繪單元UW1、第3描繪單元UW3及第5描繪單元UW5,於Y方向相距既定間隔配置。又,複數個描繪單元UW1~UW5,於夾著中心面p3配置第2、第4描繪線LL2、LL4之側(圖5之+X方向側),配置第2描繪單元UW2及第4描繪單元UW4。第2描繪單元UW2及第4描繪單元UW4,於Y方向相距既定間隔配置。此時,如之前之圖2、或圖5所示,第2描繪單元UW2,於Y方向係配置在第1描繪單元UW1與第3描繪單元UW3之間。同樣的,第3描繪單元UW3,於Y方向係配置在第2描繪單元UW2與第4描繪單元UW4之間。第4描繪單元UW4,於Y方向配置在第3描繪單元UW3與第5描繪單元UW5之間。又,如圖4所示,第1描繪單元UW1、第3描繪單元UW3及第5描繪單元UW5與第2描繪單元UW2及第4描繪單元UW4,從Y方向看,係以中心面p3為中心對稱配置。4, 5, and 7, a plurality of drawing units UW1 to UW5 will be described. As shown in FIG. 4 (and FIG. 1), a plurality of drawing units UW1 to UW5 are arranged in two rows in the circumferential direction of the rotating cylinder DR with the center plane p3 interposed therebetween. A plurality of drawing units UW1 to UW5 are arranged on the side where the first, third, and fifth drawing lines LL1, LL3, LL5 are sandwiched between the central plane p3 (the side in the -X direction in Fig. 5), and the first drawing unit UW1 and the 3 drawing unit UW3 and fifth drawing unit UW5. The first drawing unit UW1, the third drawing unit UW3, and the fifth drawing unit UW5 are arranged at predetermined intervals in the Y direction. In addition, a plurality of drawing units UW1 to UW5 are arranged on the side where the second and fourth drawing lines LL2 and LL4 are arranged sandwiching the center plane p3 (+X direction side in FIG. 5), and the second drawing unit UW2 and the fourth drawing unit UW4 are arranged . The second drawing unit UW2 and the fourth drawing unit UW4 are arranged at a predetermined interval in the Y direction. At this time, as shown in FIG. 2 or FIG. 5, the second drawing unit UW2 is arranged in the Y direction between the first drawing unit UW1 and the third drawing unit UW3. Similarly, the third drawing unit UW3 is arranged between the second drawing unit UW2 and the fourth drawing unit UW4 in the Y direction. The fourth drawing unit UW4 is arranged in the Y direction between the third drawing unit UW3 and the fifth drawing unit UW5. In addition, as shown in FIG. 4, the first drawing unit UW1, the third drawing unit UW3, the fifth drawing unit UW5, the second drawing unit UW2, and the fourth drawing unit UW4 are centered on the center plane p3 when viewed from the Y direction. Symmetrical configuration.
其次,參照圖4說明各描繪單元UW1~UW5内之光學系之構成。又,由於各描繪單元UW1~UW5為相同構成,因此以第1描繪單元UW1(以下,僅稱描繪單元UW1)為例加以説明。Next, the configuration of the optical system in each drawing unit UW1 to UW5 will be described with reference to FIG. 4. In addition, since the drawing units UW1 to UW5 have the same configuration, the first drawing unit UW1 (hereinafter, simply referred to as drawing unit UW1) will be described as an example.
圖4所示之描繪單元UW1,為沿描繪線LL1(第1描繪線LL1)掃描描繪光束LB之點光,具備光偏向器81、偏光分束器PBS、1/4波長板82、掃描器83、彎折鏡84、f-θ透鏡系85、以及包含柱面透鏡86之Y倍率修正用光學構件(透鏡群)86B。又,與偏光分束器PBS相鄰設有校準檢測系31。The drawing unit UW1 shown in FIG. 4 scans the point light of the drawing light beam LB along the drawing line LL1 (first drawing line LL1), and includes a
光偏向器81,係使用例如聲光元件(AOM:AcoustIic Optic Modulator)。AOM係藉由是否在内部以超音波(高頻訊號)生成繞射光柵,據以在使入射之描繪光束之1次繞射光產生於既定繞射角方向之ON狀態、與不產生一次繞射光之OFF狀態進行切換的光切換元件。The
圖1所示之控制部16,藉由進行光偏向器81之ON/OFF切換,據以高速進行描繪光束LB對基板P之投射/非投射的切換。具體而言,以分歧光學系SL分配之描繪光束LB之1個透過中繼透鏡91相對-Z方向略微傾斜的照射於光偏向器81。當將光偏向器81切換為OFF時,描繪光束LB即以傾斜狀態直進,而被設在通過光偏向器81之後之遮光板92遮光。另一方面,當將光偏向器81切換為ON時,描繪光束LB(1次繞射光)即往-Z方向偏向,通過光偏向器81而照射於設在光偏向器81之Z方向上的偏光分束器PBS。因此,當將光偏向器81切換為ON時,描繪光束LB之點光即投射於基板P,當將光偏向器81切換為OFF時,描繪光束LB之點光不會投射於基板P。The
又,由於AOM係配置在藉由中繼透鏡91收斂之描繪光束LB之光腰的位置,因此從光偏向器81射出之描繪光束LB(1次繞射光)會發散。為此,於光偏向器81之後設有使發散之描繪光束LB變回平行光束的中繼透鏡93。In addition, since the AOM is arranged at the position of the light waist of the drawing light beam LB converged by the
偏光分束器PBS反射從光偏向器81透過中繼透鏡93照射之描繪光束LB。從偏光分束器PBS射出之描繪光束LB依1/4波長板82、掃描器83(旋轉多面鏡)、彎折鏡84、f-θ透鏡系85、Y倍率修正用光學構件86B及柱面透鏡86之順序前進,於基板P上聚光成掃描點光。The polarization beam splitter PBS reflects the drawing light beam LB irradiated from the
另一方面,偏光分束器PBS與設在偏光分束器PBS與掃描器83之間之1/4波長板82協力動作,投射在基板P或其下之旋轉圓筒DR外周面之描繪光束LB之反射光,依Y倍率修正用光學構件86B、柱面透鏡86、f-θ透鏡系85、彎折鏡84、掃描器83之順序反向前進,因此可使該反射光穿透。也就是說,從光偏向器81照射於偏光分束器PBS之描繪光束LB係S偏光之直線偏光的雷射光,被偏光分束器PBS反射。又,被偏光分束器PBS反射之描繪光束LB,通過1/4波長板82、掃描器83、彎折鏡84、f-θ透鏡系85、Y倍率修正用光學構件86B、柱面透鏡86照射於基板P,聚光於基板P上之描繪光束LB之點光成為圓偏光。來自基板P(或旋轉圓筒DR外周面)之反射光,藉反向前進於描繪光束LB之送光路,並再次通過1/4波長板82,而成為P偏光之直線偏光的雷射光。因此,從基板P(或旋轉圓筒DR)到達偏光分束器PBS之反射光穿透偏光分束器PBS,透過中繼透鏡94照射於校準檢測系31之光電感測器31Cs。On the other hand, the polarizing beam splitter PBS and the quarter-
如前所述,偏光向分束器PBS係配置在包含掃描器83之掃描光學系與校準檢測系31之間的光分割器。由於校準檢測系31共用多數將描繪光束LB送往基板P之送光光學系的一部分,因此係一簡易且精巧的光學系。As described above, the polarization beam splitter PBS is an optical splitter arranged between the scanning optical system including the
如圖4及圖7所示,掃描器83具有反射鏡96、旋轉多面鏡(旋轉多面鏡)97、與原點檢測器98。通過1/4波長板82之描繪光束LB(平行光束),透過柱面透鏡95被反射鏡96在XY面内反射,照射於旋轉多面鏡97。旋轉多面鏡97包含延伸於Z方向之旋轉軸97a、與形成在旋轉軸97a周圍之複數個反射面97b而構成。旋轉多面鏡97,藉由以旋轉軸97a為中心往既定旋轉方向旋轉,據以使照射於反射面97b之描繪光束LB(經光偏向器81強度調變之光束)之反射角在XY面内連續變化,據此,反射之描繪光束LB即因彎折鏡84、f-θ透鏡系85、第2柱面透鏡86(及Y倍率修正用光學構件86B)而聚光成點光,沿基板P上之描繪線LL1(同樣的,沿LL2~LL5)掃描。原點檢測器98係檢測沿基板P之描繪線LL1(同樣的,沿LL2~LL5)掃描之描繪光束LB之原點。原點檢測器98,夾著於各反射面97b反射之描繪光束LB,配置在反射鏡96之相反側。As shown in FIGS. 4 and 7, the
圖7中,為簡化説明,原點檢測器98雖僅圖示光電檢測器,但實際上,設有朝向描繪光束LB投射之旋轉多面鏡97之反射面97b投射檢測用光束之LED及半導體雷射等的檢測用光源,原點檢測器98對該檢測用光束於反射面97b之反射光透過細狹縫進行光電檢測。In FIG. 7, for simplicity of explanation, although the
據此,原點檢測器98被設定為相對點光照射於基板P上之描繪線LL1(LL2~LL5)之描繪開始位置的時間點,恆早一定時間,輸出表示原點之脈衝訊號。According to this, the
從掃描器83照射於彎折鏡84之描繪光束LB被彎折鏡84反射向-Z方向,射入f-θ透鏡系85、柱面透鏡86(及Y倍率修正用光學構件86B)。The drawing light beam LB irradiated on the bending
當旋轉多面鏡97之各反射面97b相對旋轉軸97a之中心線非嚴謹的平行、而是略微傾斜(面傾斜)時,投射在基板P上之點光形成之描繪線(LL1~LL5),會就每一反射面97b在基板P上於X方向偏移。因此,使用圖8,說明藉由2個柱面透鏡95、86之設置,針對旋轉多面鏡97之各反射面97b之面傾斜,降低或消除描繪線LL1~LL5往X方向之偏移情形。When the
圖8之左側顯示將柱面透鏡95、掃描器83、f-θ透鏡系85、柱面透鏡86之光路展開於XY平面之狀態,圖8之右側則顯示將該光路於XZ平面内展開的狀態。作為基本的光學配置,旋轉多面鏡97之被描繪光束LB照射之反射面97b係配置成位於f-θ透鏡系85之入射光瞳位置(前側焦點位置)。據此,相對旋轉多面鏡97之旋轉角θp/2,射入f-θ透鏡系85之描繪光束LB之入射角成為θp,與該入射角θp成正比決定投射於基板P(被照射面)上之點光之像高位置。又,藉由將反射面97b配置在f-θ透鏡系85之前側焦點位置,投射於基板P之描繪光束LB在描繪線上之任何位置下皆成為遠心狀態(為點光之描繪光束之主光線恆與f-θ透鏡系85之光軸AXf成平行的狀態)。The left side of Fig. 8 shows the state where the optical path of the
如圖8所示,2個柱面透鏡95、86在與旋轉多面鏡97之旋轉軸97a垂直之面(XY面)内,皆做為折射力(power)為零之平行平板玻璃發揮其功能,於旋轉軸97a延伸之Z方向(XZ面内)則作為具有一定之正折射力的凸透鏡發揮其功能。射入第1柱面透鏡95之描繪光束LB(大致平行光束)之剖面形狀雖為數mm程度之圓形,但當將柱面透鏡95在XZ面内之焦點位置透過反射鏡96設定在旋轉多面鏡97之反射面97b上時,於XY面内即具有數mm之光束寬度,於Z方向則由收斂之狹縫狀點光在反射面97b上延伸於旋轉方向聚光。As shown in Fig. 8, the two
於旋轉多面鏡97之反射面97b反射之描繪光束LB,在XY面内雖為平行光束,但在XZ面内(旋轉軸97a延伸之方向)則係成為發散光束射入f-θ透鏡系85。因此,從f-θ透鏡系85射出後之描繪光束LB,在XZ面内(旋轉軸97a延伸之方向)雖大致為平行光束,但因第2柱面透鏡86之作用,在XZ面内、亦即在基板P上在與描繪線LL1~LL5延伸之方向正交之基板P之搬送方向,亦係聚光為點光。其結果,於基板P上之各描繪線上,投射圓形之小點光。The drawing beam LB reflected on the reflecting
藉由柱面透鏡86之設置,如圖8之右側所示,於XZ面内,可將旋轉多面鏡97之反射面97b與基板P(被照射面)設定成光學上像共軛關係。因此,即使旋轉多面鏡97之各反射面97b相對與描繪光束LB之掃描方向正交之非掃描方向(旋轉軸97a延伸之方向)具有傾斜誤差,基板P上之描繪線(LL1~LL5)之位置,亦不會偏移於點光之非掃描方向(基板P之搬送方向)。如上所述,藉由在旋轉多面鏡97之前與後設置柱面透鏡95、86,即能構成對非掃描方向之多面反射面之面傾斜修正光學系。With the arrangement of the
此處,如圖7所示,複數個描繪單元UW1~UW5之各掃描器83係相對中心面p3成對稱構成。複數個掃描器83,其與描繪單元UW1、UW3、UW5對應之3個掃描器83係配置在旋轉圓筒DR之旋轉方向上游側(圖7之-X方向側),與描繪單元UW2、UW4對應之2個掃描器83則配置在旋轉圓筒DR之旋轉方向下游側(圖7之+X方向側)。而上游側之3個掃描器83與下游側之2個掃描器83係夾著中心面p3對向配置。如此,上游側之3個掃描器83與下游側之2個掃描器83係以旋轉軸I(Z軸)為中心旋轉180°之配置關係。因此,當上游側之3個旋轉多面鏡97例如一邊向左旋轉、一邊於旋轉多面鏡97照射描繪光束LB時,被旋轉多面鏡97反射之描繪光束LB,即從描繪開始位置朝向描繪結束位置往既定掃描方向(例如圖7之+Y方向)掃描。另一方面,當下游側之2個旋轉多面鏡97一邊往左旋轉、一邊於旋轉多面鏡97照射描繪光束LB時,被旋轉多面鏡97反射之描繪光束LB,即從描繪開始位置朝向描繪結束位置,往與上游側之3個旋轉多面鏡97’相反之掃描方向(例如圖7之-Y方向)掃描。Here, as shown in FIG. 7, the
此處,於圖4之XZ面内觀察時,從奇數號描繪單元UW1、UW3、UW5到達基板P之描繪光束LB之軸線,係與設置方位線Le1一致之方向。也就是說,設置方位線Le1,於XZ面内,係連結奇數號描繪線LL1、LL3、LL5與旋轉中心線AX2之線。同樣的,於圖4之XZ面内觀察時,從偶數號描繪單元UW2、UW4到達基板P之描繪光束LB之軸線,係與設置方位線Le2一致之方向。也就是說,設置方位線Le2,於XZ面内,係連結偶數號描繪線LL2、LL4與旋轉中心線AX2之線。因此,於基板P成點光投射之描繪光束LB之各行進方向(主光線),皆係設定成朝向旋轉圓筒DR之旋轉中心線AX2。Here, when viewed in the XZ plane of FIG. 4, the axis of the drawing light beam LB reaching the substrate P from the odd-numbered drawing units UW1, UW3, UW5 is in the same direction as the installation direction line Le1. That is, the azimuth line Le1 is set, and the line connecting the odd-numbered drawing lines LL1, LL3, LL5 and the rotation center line AX2 in the XZ plane. Similarly, when viewed in the XZ plane of FIG. 4, the axis of the drawing light beam LB reaching the substrate P from the even-numbered drawing units UW2 and UW4 is in the same direction as the installation azimuth line Le2. In other words, the azimuth line Le2 is set, and in the XZ plane, the line connecting the even-numbered drawing lines LL2, LL4 and the rotation center line AX2. Therefore, each traveling direction (primary ray) of the drawing light beam LB projected on the substrate P as a point light is set to face the rotation center line AX2 of the rotating cylinder DR.
Y倍率修正用光學構件86B配置在f-θ透鏡系85與基板P之間。Y倍率修正用光學構件86B,可使以各描繪單元UW1~UW5形成之描繪線LL1~LL5,於Y方向,等方的微幅放大或縮小。The Y magnification correction
具體而言,可使用將涵蓋描繪線LL1~LL5之各個之一定厚度之穿透性平行平面板(石英)於描繪線延伸之方向機械性的加以彎曲(bending)以使描繪線之Y方向倍率(掃描長)可變的機構,或使凸透鏡、凹透鏡、凸透鏡之3群透鏡系之一部分於光軸方向移動以使描繪線之Y方向倍率(掃描長)可變的機構等。Specifically, a penetrating parallel plane plate (quartz) of a certain thickness covering each of the drawing lines LL1 to LL5 can be mechanically bent in the direction in which the drawing line extends to make the drawing line's Y-direction magnification (Scan length) A variable mechanism, or a mechanism that moves a part of the three-group lens system of a convex lens, a concave lens, and a convex lens in the optical axis direction to change the Y-direction magnification (scan length) of the drawing line.
以此方式構成之描繪裝置11,由控制部16控制各部於基板P上描繪既定圖案。也就是說,控制部16,在投射於基板P之描繪光束LB往掃描方向掃描之期間中,根據待描繪於基板P之圖案之CAD資訊,藉由對光偏向器81進行ON/OFF調變據以使描繪光束LB偏向,以於基板P之光感應層上描繪出圖案。又,控制部16使沿描繪線LL1掃描之描繪光束LB之掃描方向、與基板P藉由旋轉圓筒DR之旋轉往搬送方向之移動同步,據以在曝光區域A7中對應描繪線LL1之部分描繪既定圖案。In the
其次,一併參照圖3與圖9,說明對準顯微鏡AM1、AM2。對準顯微鏡AM1、AM2檢測預先形成在基板P上之對準標記、或形成在旋轉圓筒DR上之基準標記及基準圖案等。以下,將基板P之對準標記及旋轉圓筒DR之基準標記及基準圖案,僅簡稱為標記。對準顯微鏡AM1、AM2係用於進行基板P與描繪在基板P上之既定圖案之位置對準、或旋轉圓筒DR與描繪裝置11之校準。Next, referring to FIGS. 3 and 9 together, the alignment microscopes AM1 and AM2 will be described. The alignment microscopes AM1 and AM2 detect alignment marks formed in advance on the substrate P, or fiducial marks and fiducial patterns formed on the rotating cylinder DR. Hereinafter, the alignment mark of the substrate P and the reference mark and reference pattern of the rotating cylinder DR are simply referred to as marks. The alignment microscopes AM1 and AM2 are used to align the position of the substrate P and a predetermined pattern drawn on the substrate P, or to align the rotating cylinder DR and the
對準顯微鏡AM1、AM2,較以描繪裝置11形成之描繪線LL1~LL5,設置在旋轉圓筒DR之旋轉方向(基板P之搬送方向)上游側。又,對準顯微鏡AM1較對準顯微鏡AM2配置在旋轉圓筒DR之旋轉方向上游側。The alignment microscopes AM1 and AM2 are arranged on the upstream side of the rotation direction of the rotating cylinder DR (the conveying direction of the substrate P) compared to the drawing lines LL1 to LL5 formed by the
對準顯微鏡AM1、AM2,係由將照明光投射於基板P或旋轉圓筒DR並射入於標記產生之光之作為檢測探針的對物透鏡系GA(圖9中僅代表性的顯示對準顯微鏡AM2之對物透鏡系GA4)、以及將透過對物透鏡系GA受光之標記之像(亮視野像、暗視野像、螢光像等)以2維CCD、CMOS等加以拍攝的攝影系GD(圖9中僅代表性的顯示對準顯微鏡AM2之拍攝GD4)等構。又,對準用之照明光係對基板P上之光感應層幾乎不具有感度之波長帶之光、例如波長500~800nm程度光。The alignment microscopes AM1 and AM2 are composed of an objective lens system GA (only a representative display pair shown in FIG. 9) that projects illumination light on the substrate P or rotating cylinder DR and incident on the mark generated light as a detection probe The objective lens of the quasi microscope AM2 is GA4), and the image of the mark (bright field image, dark field image, fluorescent image, etc.) received through the objective lens GA is photographed with 2D CCD, CMOS, etc. GD (Figure 9 is only representative of the shooting GD4 aimed at the microscope AM2). In addition, the illumination light for alignment is light in a wavelength band that has little sensitivity to the light-sensitive layer on the substrate P, for example, light with a wavelength of about 500 to 800 nm.
對準顯微鏡AM1於Y方向(基板P之寬度方向)排成一行設有複數個(例如3個)。同樣的,對準顯微鏡AM2於Y方向(基板P之寬度方向)排成一行設有複數個(例如3個)。也就是說,對準顯微鏡AM1、AM2合計設有6個。The alignment microscope AM1 is arranged in a row in the Y direction (the width direction of the substrate P) with a plurality of (for example, 3). Similarly, there are a plurality of alignment microscopes AM2 arranged in a row in the Y direction (the width direction of the substrate P) (for example, three). That is, there are six alignment microscopes AM1 and AM2 in total.
圖3中,為易於理解,於6個對準顯微鏡AM1、AM2之各對物透鏡系GA中,顯示3個對準顯微鏡AM1之各對物透鏡系GA1~GA3之配置。3個對準顯微鏡AM1之各對物透鏡系GA1~GA3對基板P(或旋轉圓筒DR之外周面)上之觀察區域(檢測位置)Vw1~Vw3,如圖3所示,係在與旋轉中心線AX2平行之Y方向,以既定間隔配置。如圖9所示,通過各觀察區域Vw1~Vw3中心之各對物透鏡系GA1~GA3之光軸La1~La3,皆與XZ面平行。同樣的,3個對準顯微鏡AM2之各對物透鏡系GA對基板P(或旋轉圓筒DR之外周面)上之觀察區域Vw4~Vw6,如圖3所示,在與旋轉中心線AX2平行之Y方向,以既定間隔配置。如圖9所示,通過各觀察區域Vw4~Vw6中心之各對物透鏡系GA之光軸La4~La6,亦皆與XZ面平行。而觀察區域Vw1~Vw3與觀察區域Vw4~Vw6,係於旋轉圓筒DR之旋轉方向以既定間隔配置。In FIG. 3, for ease of understanding, in each pair of objective lens systems GA of 6 alignment microscopes AM1 and AM2, the arrangement of each pair of objective lens systems GA1 to GA3 of 3 alignment microscopes AM1 is shown. The three pairs of objective lenses of the alignment microscope AM1 are GA1~GA3 on the observation area (detection position) Vw1~Vw3 on the substrate P (or the outer peripheral surface of the rotating cylinder DR), as shown in Fig. The Y direction where the center line AX2 is parallel, is arranged at a predetermined interval. As shown in FIG. 9, the optical axes La1 to La3 of the pairs of objective lenses GA1 to GA3 passing through the centers of the observation regions Vw1 to Vw3 are all parallel to the XZ plane. Similarly, each pair of objective lens of the three alignment microscope AM2 is the observation area Vw4~Vw6 on the substrate P (or the outer peripheral surface of the rotating cylinder DR) by GA, as shown in Figure 3, in parallel with the rotation center line AX2 The Y direction is arranged at a predetermined interval. As shown in FIG. 9, the optical axes La4 to La6 of the pair of objective lenses GA passing through the centers of the observation regions Vw4 to Vw6 are also parallel to the XZ plane. The observation areas Vw1 to Vw3 and the observation areas Vw4 to Vw6 are arranged at predetermined intervals in the rotation direction of the rotating cylinder DR.
此對準顯微鏡AM1、AM2對標記之觀察區域Vw1~Vw6,係於基板P及旋轉圓筒DR上,例如設定在500~200μm對角程度之範圍。此處,對準顯微鏡AM1之光軸La1~La3、亦即對物透鏡系GA之光軸La1~La3,係設定成與從旋轉中心線AX2延伸於旋轉圓筒DR之徑方向之設置方位線Le3相同方向。如此,設置方位線Le3,於圖9之XZ面内觀察時,係連結對準顯微鏡AM1之觀察區域Vw1~Vw3與旋轉中心線AX2之線。同樣的,對準顯微鏡AM2之光軸La4~La6、亦即對物透鏡系GA之光軸La4~La6,係設定成與從旋轉中心線AX2延伸於旋轉圓筒DR之徑方向之設置方位線Le4相同方向。如此,設置方位線Le4,於圖9之XZ面内觀察時,係連結對準顯微鏡AM2之觀察區域Vw4~Vw6與旋轉中心線AX2之線。此時,對準顯微鏡AM1由於與對準顯微鏡AM2相較係配置在旋轉圓筒DR之旋轉方向上游側,因此中心面p3與設置方位線Le3所成之角度,較中心面p3與設置方位線Le4所成之角度大。The observation areas Vw1 to Vw6 of the alignment microscopes AM1 and AM2 for the marks are set on the substrate P and the rotating cylinder DR, for example, set in a range of 500-200 μm diagonal. Here, the optical axis La1 to La3 of the alignment microscope AM1, that is, the optical axis La1 to La3 of the objective lens system GA, are set to be aligned with the installation direction line extending from the rotation center line AX2 in the radial direction of the rotation cylinder DR Le3 is in the same direction. In this way, the azimuth line Le3 is set, and when it is observed in the XZ plane of FIG. 9, it is a line connecting the observation areas Vw1 to Vw3 of the alignment microscope AM1 and the rotation center line AX2. Similarly, the alignment of the optical axis La4~La6 of the microscope AM2, that is, the optical axis La4~La6 of the objective lens GA, is set to be aligned with the installation azimuth line extending from the rotation center line AX2 in the radial direction of the rotation cylinder DR Le4 is in the same direction. In this way, the azimuth line Le4 is set, and when observed in the XZ plane of FIG. 9, it is a line connecting the observation areas Vw4 to Vw6 of the alignment microscope AM2 and the rotation center line AX2. At this time, the alignment microscope AM1 is arranged on the upstream side of the rotation direction of the rotating cylinder DR compared with the alignment microscope AM2, so the angle formed by the center plane p3 and the installation azimuth line Le3 is greater than the center plane p3 and the installation azimuth line The angle formed by Le4 is large.
於基板P上,如圖3所示,以5個描繪線LL1~LL5之各個描繪之曝光區域A7,於X方向相距既定間隔配置。於基板P上之曝光區域A7周圍,有用以進行位置對準之複數個對準標記Ks1~Ks3(以下,簡稱標記),例如形成為十字狀。On the substrate P, as shown in FIG. 3, the exposure areas A7 drawn by each of the five drawing lines LL1 to LL5 are arranged at a predetermined interval in the X direction. Around the exposure area A7 on the substrate P, there are a plurality of alignment marks Ks1 to Ks3 (hereinafter referred to as marks) for position alignment, for example, formed in a cross shape.
圖3中,標記Ks1係在曝光區域A7之-Y側周邊區域於X方向以一定間隔設置,標記Ks3在曝光區域A7之+Y側周邊區域於X方向以一定間隔設置。進一步的,標記Ks2,在X方向相鄰之2個曝光區域A7間之空白區域中,設在Y方向之中央。In Fig. 3, the mark Ks1 is arranged at a certain interval in the X direction in the -Y side peripheral area of the exposure area A7, and the mark Ks3 is arranged at a certain interval in the X direction in the +Y side peripheral area of the exposure area A7. Further, the mark Ks2 is set in the center of the Y direction in the blank area between the two adjacent exposure areas A7 in the X direction.
標記Ks1,係以在對準顯微鏡AM1之對物透鏡系GA1之觀察區域Vw1内、及對準顯微鏡AM2之對物透鏡系GA之觀察區域Vw4内,於基板P之搬送期間能被依序捕捉之方式形成。又,標記Ks3,係以在對準顯微鏡AM1之對物透鏡系GA3之觀察區域Vw3内、及對準顯微鏡AM2之對物透鏡系GA之觀察區域Vw6内,於基板P之搬送期間能被依序捕捉之方式形成。進一步的,標記Ks2,係以分別在對準顯微鏡AM1之對物透鏡系GA2之觀察區域Vw2内、及對準顯微鏡AM2之對物透鏡系GA之觀察區域Vw5内,於基板P之搬送期間被依序捕捉之方式形成。The mark Ks1 is to be captured in sequence in the observation area Vw1 of the objective lens system GA1 of the alignment microscope AM1 and the observation area Vw4 of the objective lens system GA of the alignment microscope AM2, during the transport of the substrate P The way to form. In addition, the mark Ks3 is used in the observation area Vw3 of the objective lens GA3 of the alignment microscope AM1 and the observation area Vw6 of the objective lens GA of the alignment microscope AM2, which can be followed during the transportation of the substrate P The way of order capture is formed. Further, the mark Ks2 is to be respectively in the observation area Vw2 of the objective lens GA2 of the alignment microscope AM1 and the observation area Vw5 of the objective lens GA of the alignment microscope AM2, during the transport of the substrate P Formed by sequential capture.
因此,3個對準顯微鏡AM1、AM2中之旋轉圓筒DR之Y方向兩側之對準顯微鏡AM1、AM2,可隨時觀察或檢測形成在基板P之寬度方向兩側之標記Ks1、Ks3。此外,3個對準顯微鏡AM1、AM2中之旋轉圓筒DR之Y方向中央之對準顯微鏡AM1、AM2,可隨時觀察或檢測形成在形成在描繪於基板P上之曝光區域A7彼此間之空白部等之標記Ks2。Therefore, the three alignment microscopes AM1 and AM2 on both sides of the rotating cylinder DR in the three alignment microscopes AM1 and AM2 can observe or detect the marks Ks1 and Ks3 formed on both sides of the width direction of the substrate P at any time. In addition, the three alignment microscopes AM1 and AM2 in the Y-direction center of the rotating cylinder DR among the three alignment microscopes AM1 and AM2 can observe or detect the gap formed between the exposure areas A7 formed on the substrate P at any time. The mark Ks2 of the Ministry etc.
此處,曝光裝置EX係所謂的多光束型描繪裝置,因此為了將以複數個描繪單元UW1~UW5之各描繪線LL1~LL5於基板P上描繪之複數個圖案彼此於Y方向適當的加以接合,用以將複數個描繪單元UW1~UW5之接合精度抑制在容許範圍内之校準是必須的。此外,對準顯微鏡AM1、AM2對複數個描繪單元UW1~UW5之各描繪線LL1~LL5之觀察區域Vw1~Vw6之相對位置關係,須以基準線管理加以精密的求出。為進行此基準線管理,亦須校準。Here, the exposure device EX is a so-called multi-beam type drawing device, so in order to appropriately join the plural patterns drawn on the substrate P with the drawing lines LL1 to LL5 of the drawing units UW1 to UW5 in the Y direction. , Calibration is necessary to keep the joining accuracy of the multiple drawing units UW1~UW5 within the allowable range. In addition, the relative positional relationship of the alignment microscopes AM1 and AM2 to the observation areas Vw1 to Vw6 of the respective drawing lines LL1 to LL5 of the plurality of drawing units UW1 to UW5 must be accurately determined by reference line management. To perform this baseline management, calibration is also necessary.
於用以確認複數個描繪單元UW1~UW5之接合精度的校準、用以進行對準顯微鏡AM1、AM2之基準線管理之校準中,須於支承基板P之旋轉圓筒DR外周面之至少一部設置基準標記或基準圖案。因此,如圖10所示,於曝光裝置EX,係使用在外周面設有基準標記或基準圖案之旋轉圓筒DR。In the calibration for confirming the joining accuracy of the multiple drawing units UW1~UW5, and the calibration for the reference line management of the alignment microscopes AM1 and AM2, at least a part of the outer peripheral surface of the rotating cylinder DR of the support substrate P Set the fiducial mark or fiducial pattern. Therefore, as shown in FIG. 10, in the exposure apparatus EX, the rotating cylinder DR provided with the reference mark or reference pattern on the outer peripheral surface is used.
旋轉圓筒DR於其外周面之兩端側,如圖3、圖9所示同樣形成有構成後述旋轉位置檢測機構14之一部分之標尺部GPa、GPb。又,旋轉圓筒DR,於標尺部GPa、GPb之内側,於全周刻設有由凹狀槽、或凸狀邊緣構成之寬度窄的限制帶CLa、CLb。基板P之Y方向寬度被設定為校該2條限制帶CLa、CLb之Y方向間隔小,基板P係在旋轉圓筒DR之外周面中、緊貼以限制帶CLa、CLb所夾之内側區域而被支承。The rotating cylinder DR is formed with scale parts GPa and GPb that constitute a part of the rotation position detection mechanism 14 described later, as shown in FIGS. 3 and 9 on both ends of the outer peripheral surface. In addition, the rotating cylinder DR is provided with narrow restriction bands CLa and CLb formed by concave grooves or convex edges on the inside of the scale portions GPa and GPb. The Y-direction width of the substrate P is set to adjust the Y-direction interval of the two restriction belts CLa and CLb to be small. The substrate P is placed in the outer peripheral surface of the rotating cylinder DR and closely adheres to the inner area sandwiched by the restriction belts CLa and CLb. And be supported.
旋轉圓筒DR,在以限制帶CLa、CLb所夾之外周面,設有將相對旋轉中心線AX2以+45度傾斜之複數個線圖案RL1(線圖案)、與相對旋轉中心線AX2以-45度傾斜之複數個線圖案RL2(線圖案)以一定間距(週期)Pf1、Pf2重複刻設之網格狀的基準圖案(亦可利用為基準標記)RMP。又,線圖案RL1及線圖案RL2之寬度為LW。The rotating cylinder DR is provided with a plurality of line patterns RL1 (line patterns) inclined at +45 degrees relative to the rotation center line AX2 on the outer peripheral surface sandwiched by the restriction bands CLa and CLb, and the relative rotation center line AX2 is set to -45 A grid-like reference pattern (also used as a reference mark) RMP that is repeatedly engraved with a plurality of line patterns RL2 (line patterns) with a certain pitch (period) Pf1 and Pf2 with a degree of inclination. In addition, the width of the line pattern RL1 and the line pattern RL2 is LW.
基準圖案RMP,為避免在基板P與旋轉圓筒DR外周面之接觸部分產生摩擦力或基板P之張力等之變化,係全面均一之斜圖案(斜格子狀圖案)。又,線圖案RL1、RL2並不一定必須是傾斜45度,亦可以是將線圖案RL1作成與Y軸平行、線圖案RL2作成與X軸平行之縱橫的網格狀圖案。此外,不一定須使線圖案RL1、RL2以90度交叉,亦可使相鄰之2條線圖案RL1與相鄰之2條線圖案RL2所圍成之矩形區域,以成為正方形(或長方形)以外之菱形的角度使線圖案RL1、RL2交叉。The reference pattern RMP is an oblique pattern (oblique grid pattern) that is uniform across the entire surface in order to avoid changes in friction or tension of the substrate P at the contact portion between the substrate P and the outer peripheral surface of the rotating cylinder DR. In addition, the line patterns RL1 and RL2 do not necessarily have to be inclined at 45 degrees, and the line pattern RL1 may be made parallel to the Y axis, and the line pattern RL2 may be made into a grid pattern parallel to the X axis. In addition, it is not necessary to make the line patterns RL1 and RL2 cross at 90 degrees, and the rectangular area enclosed by the two adjacent line patterns RL1 and the adjacent two line patterns RL2 can be made into a square (or rectangle). The angle of the other rhombus crosses the line patterns RL1 and RL2.
其次,參照圖3、圖4及圖9説明旋轉位置檢測機構14。如圖9所示,旋轉位置檢測機構14係以光學方式檢測旋轉圓筒DR之旋轉位置之物,可適用例如使用旋轉編碼器等之編碼器系統。旋轉位置檢測機構14係具有設在旋轉圓筒DR之兩端部之標尺部GPa、GPb、以及與標尺部GPa、GPb之各個對向之複數個編碼器讀頭EN1、EN2、EN3、EN4的移動測量裝置。圖4及圖9中,雖僅顯示與標尺部GPa對向之4個編碼器讀頭EN1、EN2、EN3、EN4,但在標尺部GPb亦同樣的有對向配置之編碼器讀頭EN1、EN2、EN3、EN4。旋轉位置檢測機構14,可檢測旋轉圓筒DR兩端部之偏移(於旋轉中心線AX2延伸之Y方向的微幅變位)的變位計YN1、YN2、YN3、YN4。Next, the rotation position detection mechanism 14 will be described with reference to FIGS. 3, 4, and 9. As shown in FIG. 9, the rotation position detection mechanism 14 optically detects the rotation position of the rotating cylinder DR, and can be applied to an encoder system using, for example, a rotary encoder. The rotation position detection mechanism 14 has scale parts GPa and GPb provided at both ends of the rotating cylinder DR, and a plurality of encoder read heads EN1, EN2, EN3, EN4 opposed to each of the scale parts GPa and GPb Mobile measuring device. In Figures 4 and 9, although only the four encoder heads EN1, EN2, EN3, and EN4 facing the scale part GPa are shown, the scale part GPB also has the oppositely arranged encoder heads EN1. EN2, EN3, EN4. The rotation position detection mechanism 14 can detect the displacement of the two ends of the rotating cylinder DR (the slight displacement in the Y direction extending from the rotation center line AX2) displacement gauges YN1, YN2, YN3, YN4.
標尺部GPa、GPb之刻度,於旋轉圓筒DR之外周面周方向全體分別形成為環狀。標尺部GPa、GPb係於旋轉圓筒DR之外周面周方向以一定間距(例如20μm)刻設凹狀或凸狀之格子線的繞射光柵,構成為遞增(incremental)型標尺。因此,標尺部GPa、GPb繞著旋轉中心線AX2與旋轉圓筒DR一體旋轉。The scales of the scale parts GPa and GPb are respectively formed in a ring shape in the circumferential direction of the outer peripheral surface of the rotating cylinder DR. The scale parts GPa and GPb are diffraction gratings in which concave or convex grid lines are engraved at a certain pitch (for example, 20 μm) in the circumferential direction of the outer peripheral surface of the rotating cylinder DR, and are configured as incremental scales. Therefore, the scale parts GPa and GPb rotate integrally with the rotation cylinder DR around the rotation center line AX2.
基板P,係在避開旋轉圓筒DR兩端之標尺部GPa、GPb之内側、也就是說,捲繞在限制帶CLa、CLb之内側。若須有嚴格之配置關係時,係設定標尺部GPa、GPb之外周面、與捲繞在旋轉圓筒DR之基板P之部分之外周面成同一面(距中心線AX2同一半徑)。為達成此,將標尺部GPa、GPb之外周面,相對旋轉圓筒DR之基板捲繞用外周面,作成於徑方向高基板P之厚度分即可。因此,可將形成於旋轉圓筒DR之標尺部GPa、GPb之外周面,設定為與基板P之外周面大致同一半徑。從而,編碼器讀頭EN1、EN2、EN3、EN4,可在與捲繞於旋轉圓筒DR之基板P上之描繪面相同徑方向位置檢測標尺部GPa、GPb,縮小測量位置與處理位置因旋轉系之徑方向相異而產生之阿貝誤差。The substrate P is located inside the scale parts GPa and GPb avoiding both ends of the rotating cylinder DR, that is, it is wound inside the restriction belts CLa and CLb. If a strict arrangement relationship is required, set the outer peripheral surface of the scale parts GPa and GPb to be the same surface as the outer peripheral surface of the substrate P wound around the rotating cylinder DR (the same radius from the center line AX2). In order to achieve this, the outer peripheral surfaces of the scale parts GPa and GPb and the outer peripheral surface for winding the substrate relative to the rotating cylinder DR can be made into the thickness of the substrate P higher in the radial direction. Therefore, the outer peripheral surfaces of the scale portions GPa and GPb formed on the rotating cylinder DR can be set to have substantially the same radius as the outer peripheral surface of the substrate P. Therefore, the encoder heads EN1, EN2, EN3, EN4 can detect the scale parts GPa and GPb in the same radial direction as the drawing surface of the substrate P wound on the rotating cylinder DR, reducing the measurement position and processing position due to rotation The Abbe error caused by the difference of the diameter direction of the system.
編碼器讀頭EN1、EN2、EN3、EN4,從旋轉中心線AX2觀察係分別配置在標尺部GPa、GPb之周圍,於旋轉圓筒DR之周方向之不同位置。此編碼器讀頭EN1、EN2、EN3、EN4連接於控制部16。編碼器讀頭EN1、EN2、EN3、EN4朝標尺部GPa、GPb投射測量用光束,對其反射光束(繞射光)進行光電檢測,據以將對應標尺部GPa、GPb之周方向位置變化之檢測訊號(例如,具有90度相位差之2相訊號)輸出至控制部16。控制部16,藉由對該檢測訊號以未圖示之計數回路加以内挿進行數位處理,即能以次微米之分解能力測量旋轉圓筒DR之角度變化、亦即,測量其外周面之周方向位置變化。控制部16,亦可從旋轉圓筒DR之角度變化測量基板P之搬送速度。The encoder reading heads EN1, EN2, EN3, EN4, viewed from the rotation center line AX2, are respectively arranged around the scale parts GPa and GPb, at different positions in the circumferential direction of the rotating cylinder DR. The encoder read heads EN1, EN2, EN3, and EN4 are connected to the
又,如圖4及圖9所示,編碼器讀頭EN1係配置在設置方位線Le1上。設置方位線Le1,係於XZ面内,連結編碼器讀頭EN1之測量用光束對標尺部GPa(GPb)上之投射區域(讀取位置)與旋轉中心線AX2的線。又,如上所述,設置方位線Le1,係於XZ面内,連結描繪線LL1、LL3、LL5與旋轉中心線AX2之線。由以上可知,連結編碼器讀頭EN1之讀取位置與旋轉中心線AX2之線、與連結描繪線LL1、LL3、LL5與旋轉中心線AX2之線係相同方位線。In addition, as shown in FIGS. 4 and 9, the encoder read head EN1 is arranged on the set orientation line Le1. The azimuth line Le1 is set in the XZ plane to connect the projection area (reading position) of the measuring beam of the encoder read head EN1 to the scale part GPa (GPb) and the rotation center line AX2. Furthermore, as described above, the azimuth line Le1 is set to be in the XZ plane, and the line connecting the drawing lines LL1, LL3, LL5 and the rotation center line AX2. It can be seen from the above that the line connecting the reading position of the encoder head EN1 and the rotation center line AX2 and the line connecting the drawing lines LL1, LL3, LL5 and the rotation center line AX2 are the same azimuth line.
同樣的,如圖4及圖9所示,編碼器讀頭EN2係配置在設置方位線Le2上。設置方位線Le2,係於XZ面内,連結編碼器讀頭EN2之測量用光束對標尺部GPa(GPb)上之投射區域(讀取位置)與旋轉中心線AX2之線。又,如上所述,設置方位線Le2,係於XZ面内,連結描繪線LL2、LL4與旋轉中心線AX2之線。由以上可知,連結編碼器讀頭EN2之讀取位置與旋轉中心線AX2之線、與連結描繪線LL2、LL4與旋轉中心線AX2之線係相同方位線。Similarly, as shown in Figures 4 and 9, the encoder read head EN2 is arranged on the set orientation line Le2. The azimuth line Le2 is set in the XZ plane to connect the projection area (reading position) of the measuring beam of the encoder read head EN2 to the scale part GPa (GPb) and the rotation center line AX2. In addition, as described above, the azimuth line Le2 is set to be in the XZ plane and connects the drawing lines LL2, LL4 and the rotation center line AX2. It can be seen from the above that the line connecting the reading position of the encoder head EN2 and the rotation center line AX2 is the same azimuth line as the line connecting the drawing lines LL2, LL4 and the rotation center line AX2.
又,如圖4及圖9所示,編碼器讀頭EN3係配置在設置方位線Le3上。設置方位線Le3,係於XZ面内,連結編碼器讀頭EN3之測量用光束對標尺部GPa(GPb)上之投射區域(讀取位置)與旋轉中心線AX2之線。又,如上所述,設置方位線Le3,係於XZ面内,連結對準顯微鏡AM1對基板P之觀察區域Vw1~Vw3與旋轉中心線AX2之線。由以上可知,連結編碼器讀頭EN3之讀取位置與旋轉中心線AX2之線、與連結對準顯微鏡AM1之觀察區域Vw1~Vw3與旋轉中心線AX2之線,在XZ面内觀察時係相同方位線。Furthermore, as shown in FIGS. 4 and 9, the encoder read head EN3 is arranged on the set orientation line Le3. The azimuth line Le3 is set in the XZ plane to connect the projection area (reading position) of the measuring beam of the encoder read head EN3 to the scale part GPa (GPb) and the rotation center line AX2. In addition, as described above, the azimuth line Le3 is set in the XZ plane, and connects the alignment microscope AM1 to the observation area Vw1 to Vw3 of the substrate P and the rotation center line AX2. It can be seen from the above that the line connecting the reading position of the encoder head EN3 with the rotation center line AX2, and the line connecting the observation area Vw1~Vw3 of the microscope AM1 with the rotation center line AX2 are the same when viewed in the XZ plane Bearing line.
同樣的,如圖4及圖9所示,編碼器讀頭EN4係配置在設置方位線Le4上。設置方位線Le4,係於XZ面内,連結編碼器讀頭EN4之測量用光束對標尺部GPa(GPb)上之投射區域(讀取位置)與旋轉中心線AX2之線。又,如上所述,設置方位線Le4,係於XZ面内,連結對準顯微鏡AM2對基板P之觀察區域Vw4~Vw6與旋轉中心線AX2之線。由以上可知,連結編碼器讀頭EN4之讀取位置與旋轉中心線AX2之線、與連結對準顯微鏡AM2之觀察區域Vw4~Vw6與旋轉中心線AX2之線,於XZ面内觀察時係相同方位線。Similarly, as shown in Figures 4 and 9, the encoder read head EN4 is arranged on the set orientation line Le4. The azimuth line Le4 is set in the XZ plane to connect the projection area (reading position) of the measuring beam of the encoder read head EN4 to the scale part GPa (GPb) and the rotation center line AX2. In addition, as described above, the azimuth line Le4 is set in the XZ plane and connects the observation area Vw4 to Vw6 of the substrate P by the alignment microscope AM2 and the rotation center line AX2. It can be seen from the above that the line connecting the reading position of the encoder read head EN4 with the rotation center line AX2, and the line connecting the observation area Vw4~Vw6 of the microscope AM2 with the rotation center line AX2 are the same when viewed in the XZ plane Bearing line.
將編碼器讀頭EN1、EN2、EN3、EN4之設置方位(以旋轉中心線AX2為之中心之在XZ面内的角度方向)以設置方位線Le1、Le2、Le3、Le4表示之情形時,如圖4所示,係將複數個描繪單元UW1~UW5及編碼器讀頭EN1、EN2配置成設置方位線Le1、Le2相對中心面p3成角度±θ°。設置方位線Le1與設置方位線Le2,係設置成編碼器讀頭EN1與編碼器讀頭EN2在標尺部GPa(GPb)之刻度周圍,空間上非干涉的狀態。When the setting orientation of the encoder reading head EN1, EN2, EN3, EN4 (the angle direction in the XZ plane centered on the rotation center line AX2) is represented by the setting orientation line Le1, Le2, Le3, Le4, such as As shown in FIG. 4, a plurality of drawing units UW1 to UW5 and encoder reading heads EN1 and EN2 are arranged such that the azimuth lines Le1 and Le2 are set at an angle of ±θ° with respect to the center plane p3. The setting azimuth line Le1 and the setting azimuth line Le2 are set so that the encoder read head EN1 and the encoder read head EN2 are around the scale of the scale part GPa (GPb), in a state of non-interference in space.
變位計YN1、YN2、YN3、YN4,從旋轉中心線AX2觀察時分別配置在標尺部GPa或GPb之周圍,於旋轉圓筒DR周方向之不同位置。此變位計YN1、YN2、YN3、YN4連接於控制部16。The displacement gauges YN1, YN2, YN3, and YN4 are respectively arranged around the scale part GPa or GPb when viewed from the rotation center line AX2, at different positions in the circumferential direction of the rotating cylinder DR. The displacement gauges YN1, YN2, YN3, and YN4 are connected to the
變位計YN1、YN2、YN3、YN4,可藉由在與捲繞在旋轉圓筒DR之基板P上之描繪面盡可能於徑方向接近之位置進行變位檢測,縮小阿貝誤差。變位計YN1、YN2、YN3、YN4,藉由朝旋轉圓筒DR兩端部之一方投射測量用光束,並對其反射光束(或繞射光)進行光電檢測,據以將對應旋轉圓筒DR兩端部之Y方向(基板P之寬度方向)之位置變化的檢測訊號輸出至控制部16。控制部16,藉由對該檢測訊號以未圖示之測量電路(計數電路或内挿電路等)進行數位處理,能以次微米之分解能力測量旋轉圓筒DR(及基板P)之Y方向之變位變化。控制部16,亦可從旋轉圓筒DR兩端部之一方之變化,測量旋轉圓筒DR之偏移旋轉。The displacement gauges YN1, YN2, YN3, and YN4 can detect the displacement at a position as close as possible to the drawing surface on the substrate P wound on the rotating cylinder DR in the radial direction to reduce the Abbe error. The displacement gauges YN1, YN2, YN3, YN4 project the measuring beam toward one of the two ends of the rotating cylinder DR, and the reflected beam (or diffracted light) is photoelectrically detected, and the corresponding rotating cylinder DR The detection signal of the position change in the Y direction (the width direction of the substrate P) at both ends is output to the
變位計YN1、YN2、YN3、YN4,雖然4個中只要有1個即夠,但為了測量旋轉圓筒DR之偏移旋轉等,只要4個中有3個以上的話,即能掌握旋轉圓筒DR兩端部之一方之面移動(動態傾斜變化等)。又,若可由控制部16以對準顯微鏡AM1、AM2固定的測量基板P上之標記或圖案(或旋轉圓筒DR上之標記等)的話,亦可省略變位計YN1、YN2、YN3、YN4。Displacement gauges YN1, YN2, YN3, YN4, although only one of the four is sufficient, but for measuring the offset rotation of the rotating cylinder DR, etc., as long as there are more than three of the four, the rotation circle can be grasped One of the two ends of the cylinder DR moves (dynamic tilt change, etc.). Moreover, if the
此處,控制部16,係以編碼器讀頭EN1、EN2檢測標尺部(旋轉圓筒DR)GPa、GPb之旋轉角度位置,根據所檢測之旋轉角度位置,進行使用奇數號及偶數號描繪單元UW1~UW5之描繪。也就是說,控制部16,在投射於基板P之描繪光束LB往掃描方向掃描之期間中,根據待描繪於基板P之圖案之CAD資訊進行光偏向器81之ON/OFF調變,但亦可將使用光偏向器81之ON/OFF調變之時序,根據所檢測之旋轉角度位置來進行,即能於基板P之光感應層上以良好精度描繪圖案。Here, the
又,控制部16,可藉由儲存以對準顯微鏡AM1、AM2檢測基板P上之對準標記Ks1~Ks3時,以編碼器讀頭EN3、EN4檢測之標尺部GPa、GPb(旋轉圓筒DR)之旋轉角度位置,能求出基板P上之對準標記Ks1~Ks3之位置與旋轉圓筒DR之旋轉角度位置的對應關係。同樣的,控制部16,藉由儲存以對準顯微鏡AM1、AM2檢測旋轉圓筒DR上之基準圖案RMP時,以編碼器讀頭EN3、EN4檢測之標尺部GPa、GPb(旋轉圓筒DR)之旋轉角度位置,能求出旋轉圓筒DR上之基準圖案RMP之位置與旋轉圓筒DR之旋轉角度位置的對應關係。如以上所述,對準顯微鏡AM1、AM2,可精密的測量於觀察區域Vw1~Vw6内,對標記進行取樣(sampling)之瞬間之旋轉圓筒DR之旋轉角度位置(或周方向位置)。於曝光裝置EX,即根據此測量結果,進行基板P與描繪於基板P上之既定圖案的對位(對準)、或旋轉圓筒DR與描繪裝置11之校準。In addition, the
又,實際之取樣,係在以編碼器讀頭EN3、EN4測量之旋轉圓筒DR之旋轉角度位置,成為與預先大略獲知之基板P上之標記或旋轉圓筒DR上之基準圖案RMP之位置對應的角度位置時,即將從對準顯微鏡AM1、AM2之各攝影系GD輸出之影像資訊高速的寫入影像記憶體等據以進行。亦即,係以編碼器讀頭EN3、EN4測量之旋轉圓筒DR之旋轉角度位置為觸發(trigger),對從各攝影系GD輸出之影像資訊進行取樣。又,與此不同的,亦有回應一定頻率之時脈訊號之各脈衝,對以編碼器讀頭EN3、EN4測量之旋轉圓筒DR之旋轉角度位置(計數測量值)與從各攝影系GD輸出之影像資訊同時進行取樣的方法。In addition, the actual sampling is based on the rotation angle position of the rotating cylinder DR measured by the encoder reading heads EN3 and EN4, which corresponds to the position of the mark on the substrate P or the reference pattern RMP on the rotating cylinder DR roughly known in advance. The corresponding angular position is about to write the image information output from the GD of the imaging systems of the alignment microscopes AM1 and AM2 into the image memory at a high speed. That is, the rotation angle position of the rotating cylinder DR measured by the encoder reading heads EN3 and EN4 is used as a trigger to sample the image information output from each photography system GD. Also, different from this, there are also pulses that respond to a clock signal of a certain frequency. The position of the rotation angle of the rotating cylinder DR measured by the encoder reading head EN3, EN4 (counting measurement value) and the GD from each imaging system The method of sampling the output image information at the same time.
又,基板P上之標記及旋轉圓筒DR上之基準圖案RMP,由於係相對觀察區域Vw1~Vw6移動於一方向,於從各攝影系GD輸出之影像資訊之取樣時,作為CCD或CMOS之攝影元件以使用快門速度快者較佳。隨此,亦須提升照明觀察區域Vw1~Vw6之照明光之輝度,作為對準顯微鏡AM1、AM2之照明光源,亦可考慮使用閃光燈或高輝度LED等。In addition, since the mark on the substrate P and the reference pattern RMP on the rotating cylinder DR are moved in one direction relative to the observation area Vw1~Vw6, they are used as CCD or CMOS when sampling the image information output from each imaging system GD It is better to use the faster shutter speed for the photographic element. Along with this, the brightness of the illuminating light in the illuminating observation area Vw1~Vw6 must also be increased. As the illuminating light source for the microscopes AM1 and AM2, flashlights or high-brightness LEDs can also be considered.
圖11係顯示在基板上之描繪線與描繪圖案之位置關係的説明圖。描繪單元UW1~UW5,藉由沿著描繪線LL1~LL5掃描描繪光束LB之點光,據以描繪圖案PT1~PT5。描繪線LL1~LL5之描繪開始位置OC1~OC5為圖案PT1~PT5之描繪始端PTa。描繪線LL1~LL5之描繪結束位置EC1~EC5為圖案PT1~PT5之描繪終端PTb。FIG. 11 is an explanatory diagram showing the positional relationship between the drawing line and the drawing pattern on the substrate. The drawing units UW1 to UW5 draw the patterns PT1 to PT5 by scanning the point light of the drawing light beam LB along the drawing lines LL1 to LL5. The drawing start positions OC1 to OC5 of the drawing lines LL1 to LL5 are the drawing start ends PTa of the patterns PT1 to PT5. The drawing end positions EC1 to EC5 of the drawing lines LL1 to LL5 are the drawing ends PTb of the patterns PT1 to PT5.
圖案PT1之描繪始端PTa、描繪終端PTb中之描繪終端PTb與圖案PT2之描繪終端PTb接合。同樣的,圖案PT2之描繪始端PTa與圖案PT3之描繪始端PTa接合、圖案PT3之描繪終端PTb與圖案PT4之描繪終端PTb接合、圖案PT4之描繪始端PTa與圖案PT5之描繪始端PTa接合。如此,描繪於基板P上之圖案PT1~PT5彼此即隨著基板P往長條方向之移動而於基板P之寬度方向接合,於大的曝光區域A7全體描繪出元件圖案。The drawing start end PTa of the pattern PT1 and the drawing end PTb of the drawing end PTb are joined to the drawing end PTb of the pattern PT2. Similarly, the drawing start end PTa of the pattern PT2 is joined to the drawing start end PTa of the pattern PT3, the drawing end PTb of the pattern PT3 is joined to the drawing end PTb of the pattern PT4, and the drawing beginning PTa of the pattern PT4 is joined to the drawing beginning PTa of the pattern PT5. In this way, the patterns PT1 to PT5 drawn on the substrate P are joined in the width direction of the substrate P as the substrate P moves in the longitudinal direction, and the device pattern is drawn on the entire large exposure area A7.
圖12係顯示描繪光束之點光與描繪線之關係的説明圖。描繪單元UW1~UW5中,代表性的說明描繪單元UW1及UW2之描繪線LL1及LL2。由於描繪單元UW3~UW5之描繪線LL3~LL5亦相同,因此省略其説明。旋藉由轉多面鏡97之等速旋轉,描繪光束LB之光束點光SP即沿著基板P上之描繪線LL1及LL2,掃描從描繪開始位置OC1、OC2至描繪結束位置EC1、EC2之描繪線之長度LBL。Fig. 12 is an explanatory diagram showing the relationship between the point light of the drawing beam and the drawing line. Among the drawing units UW1 to UW5, the drawing lines LL1 and LL2 of the drawing units UW1 and UW2 will be described representatively. Since the drawing lines LL3 to LL5 of the drawing units UW3 to UW5 are also the same, the description thereof is omitted. By rotating the
一般來說,於直接描曝光方式,即使是裝置在描繪可曝光之最小尺寸之圖案時,亦係以複數個點光SP之多重曝光(多重寫入)來實現高精度且安定之圖案描繪。如圖12所示,設於描繪線LL1及LL2上,點光SP之實效直徑為Xs時,由於描繪光束LB為脈衝光,因此以1個脈衝光(微微秒級之發光時間)生成之點光SP與下1個脈衝光生成之點光SP,係以直徑Xs之約1/2距離CXs於Y方向(主掃描方向)重疊之方式進行掃描。Generally speaking, in the direct-tracing exposure method, even when the device is drawing a pattern of the smallest size that can be exposed, multiple exposures (multiple writing) of multiple spot lights SP are used to achieve high-precision and stable pattern drawing. As shown in Figure 12, set on the drawing lines LL1 and LL2, when the effective diameter of the spot light SP is Xs, since the drawing light beam LB is pulsed light, the point is generated by 1 pulsed light (lighting time in the order of picoseconds) The light SP and the point light SP generated by the next pulsed light are scanned in such a way that approximately 1/2 the distance CXs of the diameter Xs overlaps in the Y direction (main scanning direction).
又,與沿各描繪線LL1、LL2之點光SP之主掃描同時,基板P以一定速度被搬送向+X方向,因此各描繪線LL1、LL2於基板P上往X方向以一定間距移動(副掃描)。該間距,此處亦係設定為點光SP之直徑Xs之約1/2距離CXs,但不限於此。據此,於副掃描方向(X方向)亦係以直徑Xs之1/2(或除此以外之重疊距離亦可)距離CXs於X方向相鄰之點光SP彼此重疊曝光。進一步的,以在描繪線LL1之描繪結束位置EC1撃發之光束點光SP與在描繪線LL2之描繪結束位置EC2撃發之光束點光SP,隨著基板P往長條方向之移動(即副掃描)於基板P之寬度方向(Y方向)以重疊距離CXs接合之方式,設定描繪線LL1之描繪開始位置OC1與描繪結束位置EC1、及描繪線LL2之描繪開始位置OC2與描繪結束位置EC2。In addition, at the same time as the main scanning of the spot light SP along the respective drawing lines LL1 and LL2, the substrate P is conveyed in the +X direction at a constant speed. Therefore, the respective drawing lines LL1 and LL2 move on the substrate P in the X direction at a constant pitch (sub scanning). The distance is also set here as about 1/2 the distance CXs of the diameter Xs of the spot light SP, but it is not limited to this. Accordingly, in the sub-scanning direction (X-direction), the adjacent point lights SP in the X-direction are exposed to overlap each other at a distance CXs of 1/2 of the diameter Xs (or other overlapping distances). Further, the beam spot light SP emitted at the drawing end position EC1 of the drawing line LL1 and the beam spot light SP emitted at the drawing end position EC2 of the drawing line LL2 move along with the substrate P in the longitudinal direction (ie Sub-scanning) Set the drawing start position OC1 and the drawing end position EC1 of the drawing line LL1 in the width direction (Y direction) of the substrate P (the Y direction) to set the drawing start position OC2 and the drawing end position EC2 of the drawing line LL2 .
例如,當設光束點光SP之實效直徑Xs為4μm時,能良好的曝光出以點光SP之2列×2行(於主掃描與副掃描之兩方向重疊排排列之合計4個點光)占有之面積、或以3列×3行(於主掃描與副掃描之兩方向重疊排列之合計9個點光)占有之面積為最小尺寸的圖案,亦即最小尺寸為6μm~8μm程度之線寬度的圖案。又,當使旋轉多面鏡97之反射面97b為10面、繞旋轉軸97a之旋轉多面鏡97之旋轉速度為1萬rpm以上時,可使藉由旋轉多面鏡97在描繪線(LL1~LL5)上之點光SP(描繪光束LB)之掃描次數(設係掃描頻率Fms)為1666.66…Hz以上。此係代表可在基板P上於每1秒之搬送方向(X方向)描繪1666條以上之描繪線分之圖案。因此,若基板P每一秒之搬送距離(搬送速度)變慢,則點光彼此在副掃描方向(X方向)之重疊距離CXs可設定在點光之直徑Xs之1/2以下之值,例如1/3、1/4、1/5、…,此情形,藉由點光沿著描繪線之複數次掃描使相同描繪圖案曝光,能使賦予基板P之感光層之曝光量增加。For example, when the effective diameter Xs of the beam spot light SP is set to 4μm, 2 columns×2 rows of the spot light SP can be well exposed (a total of 4 spot lights arranged in two overlapping directions of the main scanning and sub-scanning) ) The area occupied or the area occupied by 3 columns×3 rows (a total of 9 spot lights arranged in the main scanning and sub-scanning directions) is the smallest size pattern, that is, the smallest size is about 6μm~8μm Line width pattern. In addition, when the reflecting
又,藉由旋轉圓筒DR之旋轉驅動之基板P之搬送速度為5mm/s程度時,可將圖12所示之描繪線LL1(LL2~LL5亦相同)之X方向(基板P之搬送方向)之間距(距離CXs)作成約3μm程度。Moreover, when the transfer speed of the substrate P driven by the rotation of the rotating cylinder DR is about 5 mm/s, the X direction (the transfer direction of the substrate P) of the drawing line LL1 shown in FIG. 12 (the same applies to LL2 to LL5) ) The distance (distance CXs) is about 3μm.
本實施形態之場合,於主掃描方向(Y方向)之圖案描繪之分解能力R,係由點光SP之實效直徑Xs與掃描頻率Fms,與構成光偏向器81之聲光元件(AOM)之ON/OFF最小切換時間來決定。作為聲光元件(AOM),使用最高回應頻率Fss=50MHz者時,可使ON狀態與OFF狀態之各時間為20nS程度。再者,由於藉由旋轉多面鏡97之1個反射面97b之描繪光束LB之實效掃描期間(描繪線之長度LBL分之點光掃描),係1個反射面97b之旋轉角度分之1/3程度,因此當將描繪線之長度LBL設為30mm時,依存於光偏向器81之切換時間之決定之分解能力R,即為R=LBL/(1/3)/(1/Fms)×(1/Fss)≒3μm。In the case of this embodiment, the resolution R of the pattern drawing in the main scanning direction (Y direction) is determined by the effective diameter Xs and scanning frequency Fms of the spot light SP, and the acousto-optic element (AOM) constituting the
從此關係式,為提升圖案描繪之分解能力R,例如作為光偏向器81之聲光元件(AOM)使用最高回應頻率Fss為100MHz者,並將ON/OFF之切換時間設定為10nsec。據此,分解能力R即成為一半之1.5μm。此場合,係使基板P藉由旋轉圓筒DR之旋轉之搬送速度為一半。作為提升分解能力R之其他方法,例如亦可提高旋轉多面鏡97之旋轉速度。From this relationship, in order to improve the resolution R of pattern drawing, for example, the acousto-optic element (AOM) of the
一般來說,於微影製程中使用之光阻劑,係使用光阻感度Sr約為30mj/cm2
程度之物。設光學系之穿透率ΔTs為0.5(50%)、在旋轉多面鏡97之1個反射面97b中之實效掃描期間為1/3程度、描繪線之長度LBL為30mm、描繪單元UW1~UW5之數Nuw為5、旋轉圓筒DR之基板P之搬送速度Vp為5mm/s(300mm/min)的話,光源裝置CNT所需之雷射功率Pw,可由次式加以預估。Generally speaking, the photoresist used in the photolithography process is a material with a photoresist sensitivity Sr of about 30mj/cm 2 . Suppose the transmittance ΔTs of the optical system is 0.5 (50%), the effective scanning period in one
Pw=30/60×3×30×5/0.5/(1/3)=1350mWPw=30/60×3×30×5/0.5/(1/3)=1350mW
假設,描繪單元為7個時,光源裝置CNT所需之雷射功率Pw,如次式。Suppose that when there are 7 drawing units, the laser power Pw required by the light source device CNT is as follows.
Pw=30/60×3×30×7/0.5/(1/3)=1890mWPw=30/60×3×30×7/0.5/(1/3)=1890mW
例如,若光阻感度為80mj/cm2 程度的話,為以相同速度進行曝光,作為光束輸出需有3~5W程度之光源裝置CNT。取代此種高功率光源之使用,若使基板P藉由旋轉圓筒DR之旋轉之搬送速度Vp相對初期值之5mm/s降低至30/80的話,作為光束輸出亦可使用1.4~1.9W程度之光源裝置進行曝光。For example, if the photoresistance sensitivity is about 80 mj/cm 2 , in order to perform exposure at the same speed, a light source device CNT of about 3 to 5 W is required as a beam output. To replace the use of such a high-power light source, if the transfer speed Vp of the substrate P by the rotation of the rotating cylinder DR is reduced to 30/80 from the initial value of 5mm/s, it can be used as a beam output of about 1.4~1.9W The light source device for exposure.
又,若設描繪線之長度LBL為30mm,並假設光束點光SP之點直徑Xs、與光偏向器81之聲光元件(AOM)之光切換所決定之分解能力(指定光束位置之最小格(grid),相當於1像素)Xg相等,皆為3μm時,設10面旋轉多面鏡97之旋轉速度為1萬rpm時之旋轉多面鏡97之1旋轉之時間為3/500秒、旋轉多面鏡97之1個反射面97b之實效掃描期間為1個反射面97b之旋轉角度分之1/3時,1個反射面97b之實效掃描時間Ts(秒)即可以(3/500)×(1/10)×(1/3)求出,約為Ts=1/5000(秒)。據此,光源裝置CNT為脈衝雷射時之脈衝發光頻率Fz,即可以Fz=LBL/(Ts・Xs)求出,Fz=50MHz為最低頻率。從而,於實施形態,即需要輸出頻率50MHz以上之脈衝雷射的光源裝置CNT。有鑑於此,光源裝置CNT之衝發光頻率Fz,最好是光偏向器81之聲光元件(AOM)之最高回應頻率Fss(例如50MHz)的2倍以上(例如100MHz)。Furthermore, if the length LBL of the drawing line is set to 30mm, and it is assumed that the spot diameter Xs of the beam spot light SP, and the resolution power determined by the light switch of the acousto-optic element (AOM) of the optical deflector 81 (the smallest grid of the designated beam position) (Grid), equivalent to 1 pixel) Xg is equal, when both are 3μm, suppose the rotation speed of the 10-sided
進一步的,將光偏向器81之聲光元件(AOM)切換為ON狀態/OFF狀態之驅動訊號,為避免聲光元件(AOM)從ON狀態遷移至OFF狀態之期間、或從OFF狀態遷移至ON狀態之期間產生脈衝發光,最好是進行使光源裝置CNT與以脈衝發光頻率Fz振盪之時脈訊號同步的控制。Furthermore, the acousto-optic element (AOM) of the
其次,將光束點光SP之點直徑Xs與光源裝置CNT之脈衝發光頻率Fz之關係,從光束形狀(重疊的2個點光SP之強度分布)之觀點,使用圖13之圖表加以説明。圖13之橫軸係代表點光SP在沿描繪線之Y方向、或沿基板P之搬送方向之X方向的描繪位置、或點光SP之尺寸,縱軸係代表將單獨點光SP之峰值強度規格化為1.0之相對強度值。又,此處,係設單獨點光SP之強度分布為J1,假定為高斯分布來加以説明。Next, the relationship between the spot diameter Xs of the beam spot light SP and the pulse emission frequency Fz of the light source device CNT is explained from the viewpoint of the beam shape (the intensity distribution of the two overlapping spot lights SP) using the graph of FIG. 13. The horizontal axis of FIG. 13 represents the drawing position of the spot light SP in the Y direction along the drawing line or the X direction along the conveying direction of the substrate P, or the size of the spot light SP, and the vertical axis represents the peak value of the individual spot light SP The intensity is normalized to a relative intensity value of 1.0. In addition, here, the intensity distribution of the individual spot light SP is assumed to be J1 and Gaussian distribution for explanation.
圖13中,單獨點光SP之強度分布J1,係設相對峰值強度以1/e2 之強度具有3μm之直徑。強度分布J2~J6,係顯示將此種點光SP之2脈衝分,於主掃描方向或副掃描方向錯開位置照射時於基板P上所得之積算的強度分布(輪廓)之模擬結果,分別係使位置之錯開量(間隔距離)不同者。In Fig. 13, the intensity distribution J1 of a single spot light SP is assumed to have a diameter of 3 μm with an intensity of 1/e 2 relative to the peak intensity. The intensity distributions J2~J6 show the simulation results of the integrated intensity distribution (profile) obtained on the substrate P when the two pulses of the spot light SP are divided into the main scanning direction or the sub-scanning direction. Make the position staggered amount (separation distance) different.
圖13之圖表中,強度分布J5係顯示2脈衝分之點光SP錯開與直徑3μm相同之間隔距離之情形,強度分布J4為2脈衝分之點光SP之間隔距離為2.25μm之情形、強度分布J3為2脈衝分之點光SP之間隔距離為1.5μm之情形。由此強度分布J3~J5之變化明顯可知,於強度分布J5,直徑3μm之點光SP以3μm間隔照射之條件之情形時,積算之輪廓,為2個點光各個之中心位置最高的瘤狀,於2個點光之中點位置,規格化強度僅能獲得0.3程度。相對於此,直徑3μm之點光SP以1.5μm間隔照射之條件時積算之輪廓,於輪廓中明顯之瘤狀分布,夾著2個點光之中點位置大致平坦。In the graph in Fig. 13, the intensity distribution J5 shows that the point light SP of 2 pulses is staggered by the same distance as the diameter of 3μm, and the intensity distribution J4 is the case where the distance of the point light SP of 2 pulses is 2.25μm. The distribution J3 is the case where the distance between the two-pulse point light SP is 1.5 μm. From this, the change of intensity distribution J3~J5 is obvious. In the case of intensity distribution J5, when the spot light SP with a diameter of 3μm is irradiated at an interval of 3μm, the integrated contour is the tumor shape with the highest center position of each of the two spot lights. , At the midpoint of the two spot lights, the normalized intensity can only be obtained at 0.3 degree. On the other hand, when the spot light SP with a diameter of 3 μm is irradiated at an interval of 1.5 μm, the integrated contour has obvious nodules in the contour, and the position of the midpoint between the two spot lights is roughly flat.
又,圖13中,強度分布J2係顯示將2脈衝分之點光SP之間隔距離設為0.75μm時之積算輪廓,強度分布J6係將間隔距離設定為單獨點光SP之強度分布J1之半值全寬度(FWHM)1.78μm時之積算輪廓。In addition, in Fig. 13, the intensity distribution J2 shows the cumulative profile when the separation distance of the spot light SP of 2 pulses is set to 0.75 μm, and the intensity distribution J6 is the half of the intensity distribution J1 of the individual spot light SP. The value of the total width (FWHM) 1.78μm when the integrated contour.
如以上所述,在以較點光SP之直徑Xs相同間隔短之間隔距離CXs照射2個點光之脈衝振盪之條件時,由於易顯著出現2個瘤狀分布,因此,最好是設定為曝光時不會產生強度不均(描繪精度之劣化)的最佳間隔距離。如圖13之強度分布J3或J6般,以單一點光SP之直徑Xs之一半程度(例如40~60%)之間隔距離CXs重疊較佳。此種最佳間隔距離CXs,於主掃描方向,可藉由調整光源裝置CNT之脈衝發光頻率Fz、與沿描繪線之點光SP之掃描速度或掃描時間Ts(旋轉多面鏡97之旋轉速度)至少一方來加以設定,於副掃描方向,可藉由調整描繪線之掃描頻率Fms(旋轉多面鏡97之旋轉速度)與基板P之X方向移動速度中之至少一方來加以設定。As mentioned above, when the pulse oscillation condition of two spot lights is irradiated at the same interval as the diameter Xs of the spot light SP, the interval distance CXs is shorter, because 2 nodules are likely to appear, so it is best to set it to The optimal separation distance without intensity unevenness (deterioration of drawing accuracy) during exposure. As with the intensity distribution J3 or J6 in Fig. 13, it is better to overlap the spacing distance CXs at a half-degree (for example, 40-60%) of the diameter Xs of the single spot light SP. This optimal separation distance CXs can be adjusted in the main scanning direction by adjusting the pulse emission frequency Fz of the light source device CNT, and the scanning speed of the spot light SP along the drawing line or the scanning time Ts (rotation speed of the rotating polygon mirror 97) At least one of them can be set. In the sub-scanning direction, it can be set by adjusting at least one of the scanning frequency Fms (rotation speed of the rotating polygon mirror 97) of the drawing line and the moving speed of the substrate P in the X direction.
例如,在無法高精度調整旋轉多面鏡97之旋轉速度絶對值(點光之掃描時間Ts)之情形時,藉由微調整光源裝置CNT之脈衝發光頻率Fz,可將於主掃描方向之點光SP之間隔距離CXs與點光之直徑Xs(尺寸)之比率,調整至最佳範圍。For example, when the absolute value of the rotation speed of the rotating polygon mirror 97 (the scanning time Ts of the spot light) cannot be adjusted with high precision, by finely adjusting the pulse emission frequency Fz of the light source device CNT, the spot light in the main scanning direction Adjust the ratio of the SP spacing distance CXs to the point light diameter Xs (size) to the best range.
如以上所述,在使2個點光SP於掃描方向重疊時,亦即,Xs>CXs時,光源裝置CNT係將脈衝發光頻率Fz設定為Fz>LBL/(Ts・Xs)之關係,滿足Fz=LBL/(Ts・CXs)之關係。例如,光源裝置CNT之脈衝發光頻率Fz為100MHz時,設旋轉多面鏡97為10面而以1萬rpm旋轉時,以1/e2
、或半值全寬度(FWHM)規定之點光之實效直徑Xs為3μm,可將來自各描繪單元UW1~UW5之脈衝雷射光束(點光),於各描繪線LL1~LL5上以直徑Xs之約一半之1.5μm間隔(CXs)照射。據此,圖案描繪時之曝光量均勻性獲得提升,即便是微細圖案亦能獲得基於描繪資料之忠實的曝光像(光阻像),達成高精度的描繪。As described above, when the two spot lights SP overlap in the scanning direction, that is, when Xs>CXs, the light source device CNT sets the pulse emission frequency Fz to the relationship of Fz>LBL/(Ts·Xs) to satisfy Fz=LBL/(Ts・CXs) relationship. For example, when the pulse emission frequency Fz of the light source device CNT is 100MHz, and the
進一步的,以聲光元件(AOM)之光切換速度決定之分解能力(最高回應頻率Fss)與光源裝置CNT之脈衝振盪頻率Fz,若設h為任意整數時,必須是換算為位置或時間後整數倍之關係,亦即必須是Fz=h・Fss之關係。此係由於為避免聲光元件(AOM)之光切換時序,在從光源裝置CNT發出脈衝光束之中進行ON/OFF。Further, the resolution capability (the highest response frequency Fss) determined by the light switching speed of the acousto-optic element (AOM) and the pulse oscillation frequency Fz of the light source device CNT, if h is any integer, it must be converted to position or time The relationship of integer multiples must be the relationship of Fz=h·Fss. This is because in order to avoid the light switching sequence of the acousto-optic element (AOM), the ON/OFF is performed during the pulse beam emitted from the light source device CNT.
第1實施形態之曝光裝置EX,由於係使用將光纖增幅器FB1、FB2與波長轉換部CU2之波長轉換元件加以組合之脈衝雷射光源之光源裝置CNT,因此於紫外波長帶(400~300nm),容易地得到此種具有高振盪頻率之脈衝光。The exposure apparatus EX of the first embodiment uses the pulse laser light source CNT which combines the fiber amplifiers FB1 and FB2 and the wavelength conversion element of the wavelength conversion unit CU2, and therefore operates in the ultraviolet wavelength band (400-300nm) , Easily obtain this kind of pulsed light with high oscillation frequency.
此外,聲光元件(AOM)之光切換,係根據將待描繪圖案分割成例如3μm×3μm之像素單位、以「0」、「1」表示是否對各像素單位照射脈衝束之點光之位元列(描繪資料)進行。描繪線之長度LBL為30mm之情形,點光之一次掃描中之像素數成為一萬像素,聲光元件(AOM)具備在掃描時間Ts之期間切換一萬像素量之位元列之回應性(回應頻率Fss)。另一方面,主掃描方向之相鄰點光彼此,例如以重疊直徑Xs之1/2程度之方式設定脈衝振盪頻率Fz。因此,在上述關係式Fz=h・Fss,以整數h為2以上、亦即Fz>Fss之方式設定脈衝振盪頻率Fz與聲光元件(AOM)之光切換之回應頻率Fss之關係較佳。In addition, the light switching of the acousto-optic element (AOM) is based on dividing the pattern to be drawn into pixel units of, for example, 3μm×3μm, with "0" and "1" indicating whether or not to irradiate the position of the point light of the pulse beam to each pixel unit Yuan column (delineation data) is performed. When the length of the drawing line LBL is 30mm, the number of pixels in one scan of the spot light becomes 10,000 pixels, and the acousto-optic element (AOM) has the responsiveness of switching the bit row of 10,000 pixels during the scanning time Ts ( Response frequency Fss). On the other hand, adjacent spot lights in the main scanning direction are set with the pulse oscillation frequency Fz, for example, to overlap about 1/2 of the diameter Xs. Therefore, in the above-mentioned relational expression Fz=h·Fss, it is better to set the relationship between the pulse oscillation frequency Fz and the response frequency Fss of the light switching of the acousto-optic element (AOM) with the integer h being 2 or more, that is, Fz>Fss.
其次,說明曝光裝置EX之描繪裝置11之調整方法。圖14係關於第1實施形態之曝光裝置之調整方法的流程圖。圖15係以示意方式顯示旋轉圓筒之基準圖案與描繪線之關係的説明圖。圖16係以示意方式顯示從將來自旋轉圓筒之基準圖案之反射光於亮視野受光之光電感測器輸出之訊號的説明圖。控制部16,為進行掌握複數個描繪單元UW1~UW5之位置關係的校準,如圖15所示,使旋轉圓筒DR旋轉。旋轉圓筒DR,可搬送描繪光束LB可穿透程度之具透光性的基板P。Next, the adjustment method of the
如上所述,基準圖案RMP與旋轉圓筒DR之外周面成一體。如圖15所示,基準圖案RMP中、任意之基準圖案RMP1隨著旋轉圓筒DR外周面之移動而移動。因此,基準圖案RMP1在通過描繪線LL1、LL3、LL5後,通過描繪線LL2、LL4。例如,控制部16在相同基準圖案RMP1通過描繪線LL1、LL3、LL5後時,使描繪單元UW1、UW3、UW5之描繪光束LB掃描。控制部16,在相同基準圖案RMP1通過描繪線LL2、LL4後時,使描繪單元UW2、UW4之描繪光束LB掃描(步驟S1)。因此、基準圖案RMP1即成為用以掌握描繪單元UW1~UW5之位置關係的基準。As described above, the reference pattern RMP is integrated with the outer peripheral surface of the rotating cylinder DR. As shown in FIG. 15, among the reference patterns RMP, an arbitrary reference pattern RMP1 moves with the movement of the outer peripheral surface of the rotating cylinder DR. Therefore, the reference pattern RMP1 passes the drawing lines LL1, LL3, and LL5, and then passes the drawing lines LL2, LL4. For example, the
上述校準檢測系31之光電感測器31Cs(圖4),透過包含f-θ透鏡系85與掃描器83之掃描光學系,檢測來自基準圖案RMP1之反射光。光電感測器31Cs連接於控制部16,控制部16檢測光電感測器31Cs之檢測訊號(步驟S2)。例如,描繪單元UW1~UW5就描繪線LL1~LL5毎一個,將複數個描繪光束LB之各個於既定掃描方向掃描複數行。The photoelectric sensor 31Cs of the calibration detection system 31 (FIG. 4) passes through the scanning optical system including the f-
例如,如圖16所示,描繪單元UW1~UW5,將描繪光束LB從描繪開始位置OC1起沿著上述旋轉圓筒DR之旋轉中心線AX2之方向(Y方向)進行描繪線之長度LBL(參照圖12)的第1行掃描SC1。其次,描繪單元UW1~UW5,將描繪光束LB從描繪開始位置OC1起沿著上述旋轉圓筒DR之旋轉中心線AX2之方向(Y方向)進行描繪線之長度LBL(參照圖12)的第2行掃描SC2。其次,描繪單元UW1~UW5,將描繪光束LB從描繪開始位置OC1起沿著上述旋轉圓筒DR之旋轉中心線AX2之方向(Y方向)進行描繪線之長度LBL(參照圖12)的第3行掃描SC3。For example, as shown in FIG. 16, the drawing units UW1 to UW5 draw the drawing light beam LB from the drawing start position OC1 along the direction (Y direction) of the rotation center line AX2 of the rotating cylinder DR to draw the line length LBL (refer to Figure 12) Scan SC1 on
旋轉圓筒DR,由於係繞旋轉中心線AX2旋轉,因此第1行掃描SC1,第2行掃描SC2及第3行掃描SC3在基準圖案RMP1上之X方向位置,有ΔP1、ΔP2之差異。又,控制部16,亦可以是進行在使旋轉圓筒DR靜止之狀態下進行沿第1行掃描SC1之描繪光束LB之掃描,之後,在使旋轉圓筒DR旋轉ΔP1分後靜止,進行沿第2行掃描SC2之描繪光束LB之掃描,後再次使旋轉圓筒DR旋轉ΔP2後靜止,進行沿第3行掃描SC3之描繪光束LB之掃描、以此順序使各部動作的程序。Since the rotating cylinder DR rotates around the rotation center line AX2, the X-direction positions of the first scan SC1, the second scan SC2, and the third scan SC3 on the reference pattern RMP1 are different by ΔP1 and ΔP2. In addition, the
如上所述,基準圖案RMP,係設定成形成在旋轉圓筒DR外周面之彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2,較上述描繪線之長度LBL小。因此、當投射第1行掃描SC1,第2行掃描SC2及第3行掃描SC3之描繪光束LB時,描繪光束LB至少照射於交點部Cr1、Cr2。線圖案RL1、RL2係於旋轉圓筒DR之表面以凹凸形成。當將旋轉圓筒DR表面之凹凸之段差量作成特定條件時,描繪光束LB投射於線圖案RL1、RL2而產生之反射光,會部分的產生反射強度之差。例如,如圖16所示,線圖案RL1、RL2係旋轉圓筒DR表面之凹部時,當描繪光束LB投射於線圖案RL1、RL2時,於線圖案RL1、RL2反射之反射光即被光電感測器31Cs於亮視野受光。As described above, the reference pattern RMP is set so that the intersections Cr1 and Cr2 of the two line patterns RL1 and RL2 that cross each other formed on the outer peripheral surface of the rotating cylinder DR are smaller than the length LBL of the drawing line. Therefore, when the drawing light beam LB of the first line scan SC1, the second line scan SC2, and the third line scan SC3 is projected, the drawing light beam LB irradiates at least the intersection portions Cr1 and Cr2. The line patterns RL1 and RL2 are formed with concavities and convexities on the surface of the rotating cylinder DR. When the level difference between the unevenness of the surface of the rotating cylinder DR is set as a specific condition, the reflected light generated by the drawing light beam LB projected on the line patterns RL1 and RL2 will partly produce a difference in reflection intensity. For example, as shown in FIG. 16, when the line patterns RL1 and RL2 are recesses on the surface of the rotating cylinder DR, when the drawing light beam LB is projected on the line patterns RL1 and RL2, the reflected light reflected on the line patterns RL1 and RL2 is photo-induced The detector 31Cs receives light in the bright field.
控制部16根據來自光電感測器31Cs之輸出訊號,檢測基準圖案RMP之邊緣位置psc1。例如,控制部16根據第1行掃描SC1時從光電感測器31Cs所得之輸出訊號,儲存第1行掃描位置資料Dsc1、與基準圖案RMP之邊緣位置psc1之中間值mpsc1。The
其次,控制部16根據第2行掃描SC2時從光電感測器31Cs所得之輸出訊號,儲存第2行掃描位置資料Dsc2、與基準圖案RMP之邊緣位置psc1之中間值mpsc1。此外,控制部16根據第3行掃描SC3時從光電感測器31Cs所得之輸出訊號,儲存第3行掃描位置資料Dsc3、與基準圖案RMP之邊緣位置psc1之中間值mpsc1。Next, the
控制部16從第1行掃描位置資料Dsc1,第2行掃描位置資料Dsc2及第3行掃描位置資料Dsc3、與複數個基準圖案RMP之邊緣位置psc1之中間值mpsc1,透過運算求出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2之座標位置。其結果,控制部16亦可運算出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2與描繪開始位置OC1之關係。針對其他描繪單元UW2~5亦同樣的,控制部16可運算出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2與描繪開始位置OC2~OC5(參照圖11)之關係。又,上述中間值mpsc1亦可從從光電感測器31Cs輸出之訊號之峰值求出。The
以上,針對於線圖案RL1、RL2反射之反射光由光電感測器31Cs在亮視野受光之情形作了説明,但光電感測器31Cs亦可將於線圖案RL1、RL2反射之反射光在暗視野受光。圖17係以示意方式顯示將來自旋轉圓筒之基準圖案之反射光於暗視野受光之光電感測器的説明圖。圖18係以示意方式顯示從將來自旋轉圓筒之基準圖案之反射光於暗視野受光之光電感測器輸出之訊號的説明圖。如圖17所示,校準檢測系31,在中繼透鏡94與光電感測器31Cs之間配置具有環帶狀光穿透部之遮光構件31f。因此、光電感測器31Cs,係受光於線圖案RL1、RL2反射之反射光中之邊緣散射光或繞射光。例如,如圖18所示,線圖案RL1、RL2係旋轉圓筒DR表面之凹部時,當描繪光束LB投射於線圖案RL1、RL2時,光電感測器31Cs即將於線圖案RL1、RL2反射之反射光於暗視野加以受光。Above, the case where the reflected light reflected by the line patterns RL1 and RL2 is received by the photoelectric sensor 31Cs in a bright field has been explained. However, the photoelectric sensor 31Cs can also be used to darken the reflected light from the line patterns RL1 and RL2. The field of view receives light. Fig. 17 is an explanatory diagram schematically showing a photoelectric sensor that receives light reflected from a reference pattern of a rotating cylinder in a dark field. FIG. 18 is an explanatory diagram schematically showing a signal output from a photoelectric sensor that receives light reflected from a reference pattern of a rotating cylinder in a dark field. As shown in FIG. 17, the
控制部16根據從光電感測器31Cs輸出之訊號,檢測基準圖案RMP之邊緣位置pscd1。例如,控制部16根據第1行掃描SC1時從光電感測器31Cs所得之輸出訊號,儲存第1行掃描位置資料Dsc1、與基準圖案RMP之邊緣位置pscd1之中間值mpscd1。其次,控制部16根據第2行掃描SC2時從光電感測器31Cs所得之輸出訊號,儲存第2行掃描位置資料Dsc2、與基準圖案RMP之邊緣位置pscd1之中間值mpscd1。控制部16根據第3行掃描SC3時從光電感測器31Cs所得之輸出訊號,儲存第3行掃描位置資料Dsc3、與基準圖案RMP之邊緣位置pscd1之中間值mpscd1。The
控制部16,從第1行掃描位置資料Dsc1,第2行掃描位置資料Dsc2及第3行掃描位置資料Dsc3、與複數個基準圖案RMP之邊緣位置pscd1之中間值mpscd1,透過運算求出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2。其結果,控制部16,透過運算求出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2之座標位置與描繪開始位置OC1之關係。The
針對其他描繪單元UW2~5亦同樣的,控制部16可運算出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2與描繪開始位置OC2~OC5之關係。如以上所述,於線圖案RL1、RL2反射之反射光由光電感測器31Cs於暗視野受光之情形時,可提高複數個基準圖案RMP之邊緣位置pscd1之精度。The same applies to the other drawing units UW2 to UW5. The
如圖14所示,控制部16,從於步驟S2檢測之檢測訊號求出對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)(步驟S3)。圖19係以示意方式顯示旋轉圓筒之基準圖案彼此之位置關係的説明圖。圖20係以示意方式顯示複數個描繪線之相對位置關係的説明圖。如上所述,配置奇數號第1描繪線LL1,第3描繪線LL3及第5描繪線LL5,如圖19所示,就第1描繪線LL1,第3描繪線LL3及第5描繪線LL5之各個,所檢測之交點部Cr1間之基準距離PL預先儲存於控制部16。同樣的,就第2描繪線LL2及第4描繪線LL4之各個,所檢測之交點部Cr1間之基準距離PL亦預先儲存於控制部16。又,就第2描繪線LL2及第3描繪線LL3之各個,所檢測之交點部Cr1間之基準距離ΔPL亦預先儲存於控制部16。進一步的,就第4描繪線LL4及第5描繪線LL5之各個,所檢測之交點部Cr1間之基準距離ΔPL亦預先儲存於控制部16。As shown in FIG. 14, the
例如,如圖20所示,控制部16,就第1描繪線LL1之描繪開始位置OC1已根據來自原點檢測器98(參照圖7)之訊號掌握了位置關係,因此能求出交點部Cr1與描繪開始位置OC1之距離BL1。又,控制部16,就第3描繪線LL3之描繪開始位置OC3已由原點檢測器98檢測了位置,因此能求出交點部Cr1與描繪開始位置OC3之距離BL3。從而、控制部16可根據距離BL1,距離BL3及基準距離PL求出描繪開始位置OC1與描繪開始位置OC3之位置關係,儲存沿描繪線LL1、LL3掃描之描繪光束LB之原點間之原點間距離ΔOC13。同樣的,控制部16,就第5描繪線LL5之描繪開始位置OC5已由原點檢測器98檢測了位置,因此能求出交點部Cr1與描繪開始位置OC5之距離BL5。從而、控制部16可根據距離BL3、距離BL5及基準距離PL求出描繪開始位置OC3與描繪開始位置OC5之位置關係,儲存沿描繪線LL3、LL5掃描之描繪光束LB之原點間之原點間距離ΔOC35。For example, as shown in FIG. 20, the
控制部16,就第2描繪線LL2之描繪開始位置OC2已由原點檢測器98檢測了位置,因此能求出交點部Cr1與描繪開始位置OC2之距離BL2。又,控制部16,就第4描繪線LL4之描繪開始位置OC4已由原點檢測器98檢測了位置,因此能求出交點部Cr1與描繪開始位置OC4之距離BL4。從而、控制部16可根據距離BL2,距離BL4及基準距離PL求出描繪開始位置OC2與描繪開始位置OC4之位置關係,儲存沿描繪線LL2、LL4掃描之描繪光束LB之原點間之原點間距離ΔOC24。Since the
又,控制部16,由於描繪開始位置OC1與描繪開始位置OC2係透過上述相同基準圖案RMP1求出之位置,因此能容易的儲存沿描繪線LL1、LL2掃描之描繪光束LB之原點間之原點間距離ΔOC12。如以上之説明,曝光裝置EX能求出複數個描繪單元UW1~UW5各個之原點(描繪開始點)之彼此的位置關係。In addition, the
又,控制部16,可從在第2描繪線LL2及第3描繪線LL3檢測之交點部Cr1間之基準距離ΔPL,檢測描繪開始位置OC2與描繪開始位置OC3之接合誤差。進一步的,可從在第4描繪線LL4及第5描繪線LL5檢測之交點部Cr1間之基準距離ΔPL,檢測描繪開始位置OC4與描繪開始位置OC5之接合誤差。In addition, the
在從各描繪線LL1~LL5之描繪開始位置OC1~OC5到描繪結束位置EC1~EC5為止之期間檢測2個交點部Cr1、Cr2。據此,即能檢測從描繪開始位置OC1~OC5到描繪結束位置EC1~EC5為止之掃描方向。其結果,控制部16可檢測各描繪線LL1~LL5相對沿中心線AX2之方向(Y方向)之角度誤差。Two intersections Cr1 and Cr2 are detected during the period from the drawing start positions OC1 to OC5 of the drawing lines LL1 to LL5 to the drawing end positions EC1 to EC5. According to this, it is possible to detect the scanning direction from the drawing start position OC1 to OC5 to the drawing end position EC1 to EC5. As a result, the
控制部16,針對上述基準圖案RMP1,求出對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)。包含基準圖案RMP1之基準圖案RMP,係以一定間距(週期)Pf1、Pf2重複刻設之網格狀基準圖案。因此、控制部16針對以各間距Pf1、Pf2重複之基準圖案RMP,求出對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),運算與複數個描繪線LL1~LL5之相對位置關係之偏差相關之資訊。其結果,控制部16能更進一步提高對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)之精度。The
其次,如圖14所示,控制部16進行調整描繪狀態之處理(步驟S4)。控制部16,根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以編碼器讀頭EN1、EN2檢測之標尺部(旋轉圓筒DR)GPa、GPb之旋轉角度位置,調整奇數號及偶數號之描繪單元UW1~UW5之描繪位置。編碼器讀頭EN1、EN2可根據上述標尺部(旋轉圓筒DR)GPa、GPb檢測基板P之搬送量。Next, as shown in FIG. 14, the
圖21,與先前之圖12同樣的,係以示意方式顯示基板之每單位時間之移動距離與移動距離内所含之描繪線數之關係的説明圖。如圖21所示,編碼器讀頭EN1、EN2可檢測並儲存基板P之每單位時間之移動距離ΔX。又,亦可藉由上述對準顯微鏡AM1、AM2逐次檢測複數個對準標記Ks1~Ks3,以求出並儲存移動距離ΔX。Fig. 21 is an explanatory diagram schematically showing the relationship between the movement distance per unit time of the substrate and the number of drawing lines contained in the movement distance, similar to the previous Fig. 12. As shown in Figure 21, the encoder read heads EN1 and EN2 can detect and store the movement distance ΔX of the substrate P per unit time. In addition, it is also possible to sequentially detect a plurality of alignment marks Ks1 to Ks3 by the above-mentioned alignment microscopes AM1 and AM2 to obtain and store the movement distance ΔX.
於基板P之每單位時間之移動距離ΔX,以描繪單元UW1描繪之複數個描繪線LL1係以光束點光SP之光束線SPL1、SPL2及SPL3描繪,以各個光束點光SP之點直徑Xs之約1/2於X方向(及Y方向)重疊之方式掃描。同樣的,描繪線LL1之描繪終端PTb側之光束點光SP與描繪線LL2之描繪終端PTb側之光束點光SP,係隨著基板P往長條方向之移動於基板P之寬度方向以重疊距離CXs接合。The moving distance ΔX per unit time on the substrate P is drawn by the drawing unit UW1. The multiple drawing lines LL1 are drawn by the beam lines SPL1, SPL2, and SPL3 of the beam spot light SP, and the spot diameter Xs of each beam spot light SP Scan about 1/2 in the X direction (and Y direction) overlapping mode. Similarly, the beam spot SP on the drawing terminal PTb side of the drawing line LL1 and the beam spot SP on the drawing terminal PTb side of the drawing line LL2 are overlapped in the width direction of the substrate P as the substrate P moves in the longitudinal direction. Distance CXs junction.
例如,當旋轉圓筒DR上下動時,奇數號及偶數號描繪單元UW1~UW5之X方向描繪位置即產生偏移,有可能產生例如X方向之倍率差。控制部16,使旋轉圓筒DR搬送之基板P之搬送速度(移動速度)慢時,光束線SPL1、SPL2及SPL3之X方向間隔距離CXs變小,可調整X方向之描繪倍率變小。相反的,當加快旋轉圓筒DR搬送之基板P之搬送速度(移動速度)時,光束線SPL1、SPL2及SPL3之X方向間隔距離CXs即變大,可調整X方向之描繪倍率變大。以上,針對描繪線LL1參照圖21作了説明,針對其他之描繪線LL2~LL5亦同。控制部16,根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以編碼器讀頭EN1、EN2檢測之標尺部(旋轉圓筒DR)GPa、GPb之旋轉角度位置,變更在基板P之長條方向之基板P每單位時間之移動距離ΔX、與該移動距離内所含之光束線SPL1、SPL2及SPL3之數量的關係。因此,控制部16可調整奇數號及偶數號描繪單元UW1~UW5於X方向之描繪位置。For example, when the rotating cylinder DR moves up and down, the X-direction drawing positions of the odd-numbered and even-numbered drawing units UW1 to UW5 are shifted, which may cause, for example, a magnification difference in the X direction. When the
圖22係以示意方式說明與脈衝光源之系統時脈同步發光之脈衝光的説明圖。以下,針對描繪線LL2亦參照圖21加以説明,針對描繪線LL1、LL3~LL5亦同。光源裝置CNT可與作為系統時脈SQ之脈衝訊號wp同步擊出光束點光SP。藉由改變系統時脈SQ之頻率Fz,脈衝訊號wp之脈衝間隔Δwp(=1/Fz)亦改變。該時間性的脈衝間隔Δwp,於描繪線LL2上,係對應每一脈衝之點光SP之主掃描方向之間隔距離CXs。控制部16,係使描繪光束LB之光束點光SP沿基板P上之描繪線LL2掃描描繪線之長度LBL。FIG. 22 is an explanatory diagram schematically illustrating the pulsed light that emits light in synchronization with the system clock of the pulsed light source. Hereinafter, the drawing line LL2 is also described with reference to FIG. 21, and the same is true for the drawing lines LL1, LL3 to LL5. The light source device CNT can simultaneously strike the beam spot light SP with the pulse signal wp as the system clock SQ. By changing the frequency Fz of the system clock SQ, the pulse interval Δwp (=1/Fz) of the pulse signal wp is also changed. The temporal pulse interval Δwp, on the drawing line LL2, corresponds to the interval distance CXs in the main scanning direction of the spot light SP of each pulse. The
控制部16,具備在描繪光束LB沿描繪線LL2進行掃描之期間,部分的變更系統時脈SQ之週期,以使脈衝間隔Δwp在描繪線LL2中之任意位置増減的功能。例如,原本之系統時脈SQ為100MHz之場合,控制部16,在掃描描繪線之長度LBL之期間以一定時間間隔(週期)部分的將系統時脈SQ變更為例如101MHz(或99MHz)。其結果,光束點光SP在描繪線之長度LBL之數量即増減。換言之,控制部16,在掃描描繪線之長度LBL之期間,以既定次(1以上)之週期間隔部分的増減系統時脈SQ之工作比。據此,光源CNT產生之光束點光SP之間隔即變化脈衝間隔Δwp之變化分,光束點光SP彼此之重疊距離CXs變化。而Y方向之描繪始端PTa與描繪終端PTb之距離,看起來即伸縮。The
舉一例而言,描繪線之長度LBL為30mm時,將其11等分而就每一約3mm之描繪長(週期間隔)僅使1處之系統時脈SQ之脈衝間隔Δwp増減。脈衝間隔Δwp之増減量,如圖13之説明,若將不會招致隨著相鄰2個點光SP之間隔距離CXs之變化的積算輪廓(強度分布)之大幅悪化之範圍、例如將基準之間隔距離CSx設為點光之直徑Xs(3μm)之50%的話,相對其設為約±15%左右。若設脈衝間隔Δwp之増減為+10%(間隔距離CSx為點光之直徑Xs之60%)的話,在長度LBL之描繪線中之離散的10處之各處,1脈衝分之點光會產生往主掃描方向延伸直徑Xs之10%分的位置偏移。其結果,描繪後之描繪線之長度LBL,會相對30mm延長3μm。此係代表描繪於基板P上之圖案往Y方向擴大0.01%(100ppm)之意。據此,即使是在基板P於Y方向伸縮之情形時,亦能因應使描繪圖案於Y方向伸縮進行曝光。For example, when the length of the drawing line LBL is 30 mm, it is divided into 11 equal parts, and the pulse interval Δwp of the system clock SQ is increased or decreased for each drawing length of approximately 3 mm (period interval). The increase or decrease of the pulse interval Δwp, as illustrated in Fig. 13, will not cause the range of the accumulated contour (intensity distribution) that changes with the change in the distance CXs between the two adjacent point lights SP to be greatly degraded, for example, the reference If the separation distance CSx is set to 50% of the diameter Xs (3μm) of the spot light, it is set to about ±15%. If the increase or decrease of the pulse interval Δwp is +10% (the interval distance CSx is 60% of the diameter Xs of the spot light), at 10 discrete locations in the drawing line of the length LBL, 1 pulse of spot light will be generated The position is shifted by 10% of the diameter Xs in the main scanning direction. As a result, the length LBL of the drawing line after drawing is extended by 3 μm relative to 30 mm. This means that the pattern drawn on the substrate P is expanded by 0.01% (100 ppm) in the Y direction. According to this, even when the substrate P is expanded and contracted in the Y direction, exposure can be performed in accordance with the expansion and contraction of the drawing pattern in the Y direction.
將增減脈衝間隔Δwp之位置,例如,設成能於描繪線LL1~LL5之1次掃描,例如預設於系統時脈SQ之每100脈衝、每200脈衝、・・・之任意值的構成。如此一來,即能將描繪圖案之主掃描方向(Y方向)之伸縮量在比較大範圍內進行變更,因應基板P之伸縮及變形,動態的進行倍率修正。因此,於本實施形態之曝光裝置EX之控制部16中包含系統時脈SQ之產生電路,該產生電路具有脈衝間隔Δwp以一定之原時脈訊號為系統時脈SQ產生之時脈振盪部、與輸入該原時脈訊號計數(count)預先設定之脈衝數分後將系統時脈SQ之次一時脈脈衝產生為止之時間相對脈衝間隔Δwp使之増減之時間遷移部。又,描繪線(長度LBL)中,使系統時脈SQ之脈衝間隔Δwp増減之部分之數量,雖係視待描繪之圖案之Y方向之倍率修正比(ppm)大致決定,最少時,可以是對應長度LBL之點光SP之掃描時間Ts中之至少1處。Set the position to increase or decrease the pulse interval Δwp, for example, to be able to scan the drawing line LL1~LL5 once, for example, preset to any value of every 100 pulses, every 200 pulses, ... of the system clock SQ . In this way, the amount of expansion and contraction in the main scanning direction (Y direction) of the drawing pattern can be changed in a relatively large range, and the magnification can be dynamically corrected in response to the expansion and deformation of the substrate P. Therefore, the
圖23係顯示使系統時脈SQ之脈衝間隔Δwp部分地可變之時脈產生電路之一例。圖23中,從時脈振盪部200輸出與系統時脈SQ相同頻率之基本時脈訊號CKL。基本時脈訊號CKL係施加於藉由對基本時脈訊號CKL之各脈衝附加既定延遲時間Td產生系統時脈SQ之延遲電路202、及輸出將基本時脈訊號CKL之頻率例如增加20倍之增倍時脈訊號CKs之增倍電路204。FIG. 23 shows an example of a clock generating circuit that makes the pulse interval Δwp of the system clock SQ partially variable. In FIG. 23, the basic clock signal CKL with the same frequency as the system clock SQ is output from the
延遲電路202在內部具有將增倍時脈訊號CKs之脈衝數計數至既定值ΔNs為止之計數器。該計數器對既定值ΔNs進行計數之期間相當於延遲時間Td。既定值ΔNs係藉由預設定電路206設定。預設定電路206在內部具備作為既定值ΔNs之初始值之標準值Ns0
,從外部(主CPU等)傳送來預設定值Dsb(與延遲時間Td之變化量ΔTd對應之值)後,將新的既定值ΔNs覆寫成前一刻之既定值ΔNs+Dsb。The
該覆寫係回應來自對從延遲電路202輸出之系統時脈SQ之脈衝進行計數之計數器電路208之完成脈衝訊號b進行。計數器電路208具備下述構成,即對系統時脈SQ之脈衝數進行計數至預設定值Dsa而輸出完成脈衝訊號b後,將計數值重置成零後再次反覆對系統時脈SQ之脈衝數進行計數。預設定值Dsa雖為對應描繪線之長度LBL被N等分時之一個長度LBL/N之點光之脈衝數Nck,但不一定要對應長度LBL/N,亦可為任意值。此外,由上述延遲電路202、預設定電路206、計數器電路208構成時間偏移部。The overwriting is performed in response to the completion pulse signal b from the
圖24係顯示圖23之電路構成中各部之訊號之時間遷移之時序圖。在預設定電路206設定作為初始值之標準值Ns0
,設施加於延遲電路202之既定值ΔNs為標準值Ns0
。在計數器電路208計數至設定之脈衝數Nck之前,亦即在完成脈衝訊號b產生前之狀態,來自預設定電路206之既定值ΔNs為Ns0,延遲電路202,如圖24所示,從基本時脈訊號CKL之各脈衝之上升對增倍時脈訊號CKs之脈衝數進行計數至既定值ΔNs,與該計數完成同時地作為系統時脈SQ輸出一個脈衝wp。是以,從基本時脈訊號CKL之脈衝之上升至系統時脈SQ之對應脈衝wp之上升為止之延遲時間Td1
相當於對增倍時脈訊號CKs之脈衝進行計數至既定值ΔNs之時間。FIG. 24 is a timing diagram showing the time transition of the signals of each part in the circuit configuration of FIG. 23. The standard value Ns 0 is set as the initial value in the
圖24中,藉由對應基本時脈訊號CKL之脈衝CKn在延遲時間Td1
後產生之系統時脈SQ之脈衝wp,計數器電路208進行計數至預設定值Dsa(脈衝數Nck)後,計數器電路208輸出完成脈衝訊號b,與此回應地,預設定電路206將新的既定值ΔNs覆寫成前一刻之既定值ΔNs+Dsb。預設定值Dsb為對應圖22所示之脈衝間隔Δwp之變化量(ΔTd)之數值,圖24中,雖設定成負值,但正值亦相同。是以,在基本時脈訊號CKL之脈衝CKn之下一個脈衝CKn+1產生前,在延遲電路202設定對應較以標準值Ns0
設定之延遲時間Td1
短ΔTd之延遲時間Td2
之既定值ΔNs。In FIG. 24, the
藉此,回應基本時脈訊號CKL之脈衝CKn+1產生之系統時脈SQ之脈衝wp’與前一刻之脈衝wp之脈衝間隔Δwp’較之前之脈衝間隔Δwp短。在脈衝wp’產生後,計數器電路208計數至脈衝數Nck次之系統時脈SQ為止前,不會產生完成脈衝訊號b,因此設定在延遲電路202之既定值ΔNs維持為對應延遲時間Td2
之值,在完成脈衝訊號b接著產生為止,系統時脈SQ以相對於基本時脈訊號CKL一律地延遲延遲時間Td2
之狀態輸出。是以,以基本時脈訊號CKL之頻率Fz決定之脈衝間隔Δwp與時間偏移所修正之脈衝間隔Δwp’之比β成為
β=Δwp’/Δwp=1±(ΔTd/Δwp) (其中,ΔTd<Δwp)
沿著描繪線描繪之圖案之寬度方向之尺寸,在β>1時較以描繪資料規定之設計值放大,在β<1時(圖24之情形)較設計值縮小。Thereby, the pulse interval Δwp' of the pulse wp' of the system clock SQ generated in response to the pulse CKn+1 of the basic clock signal CKL and the pulse wp of the previous moment is shorter than the previous pulse interval Δwp. After the pulse wp' is generated, the
在上述圖23之電路構成,就系統時脈SQ之脈衝數Nck次之計數分別反覆執行使在完成脈衝訊號b產生後一刻所作之系統時脈SQ之一個脈衝wp之脈衝間隔Δwp變化時間ΔTd動作。此外,圖23之電路構成之情形,若設預設定電路206在內部儲存之標準值Ns0
為20、從外部設定之預設定值Dsb為零,則不論有無產生完成脈衝訊號b,既定值ΔNs維持20(Y方向之描繪倍率未修正之狀態)。又,由於設增倍時脈訊號CKs之頻率為基本時脈訊號CKL之頻率之20倍,因此設既定值ΔNs為20之情形,將預設定值Dsb設定成+1(或-1),則既定值ΔNs,每當產生完成脈衝訊號b時,被覆寫成20, 21, 22, ・・・(或20, 19, 18・・・)般地增加(或減少)。再者,增倍時脈訊號CKs之一個脈衝相當於標準之脈衝間隔Δwp(脈衝間隔距離CXs)之1/20(5%),因此若預設定值Dsb改變±1,則二個連續之點光之重疊之比例以5%單位改變。In the above circuit configuration of Fig. 23, the pulse number Nck of the system clock SQ is counted repeatedly to make the pulse interval Δwp change time ΔTd of a pulse wp of the system clock SQ immediately after the generation of the pulse signal b is completed. . In addition, in the case of the circuit configuration of Fig. 23, if the standard value Ns 0 stored in the
如上述,回應此種脈衝間隔Δwp部分増減之系統時脈SQ而從脈衝雷射之光源裝置CNT輸出之脈衝光束,係對描繪單元UW1~UW5之各個共通的供應,因此,以描繪線LL1~LL5之各個描繪之圖案會於Y方向以相同比率伸縮。因此,如圖12(或圖11)所説明般,為維持於Y方向相鄰之描繪線間之接合精度,係修正描繪時序,以使描繪線LL1~LL5各個之描繪開始位置OC1~OC5(或描繪結束位置EC1~EC5)往Y方向移動。As mentioned above, the pulse beam output from the light source device CNT of the pulse laser in response to the system clock SQ of the partial increase in the pulse interval Δwp is supplied to each of the drawing units UW1 to UW5. Therefore, the drawing lines LL1 to Each drawing pattern of LL5 will expand and contract at the same ratio in the Y direction. Therefore, as illustrated in FIG. 12 (or FIG. 11), in order to maintain the accuracy of joining between the drawing lines adjacent in the Y direction, the drawing timing is corrected so that the drawing start positions OC1 to OC5 of the drawing lines LL1 to LL5 ( Or the drawing end position EC1~EC5) move in the Y direction.
使系統時脈SQ之脈衝間隔Δwp部分地可變之電路構成之例,除了圖23、圖24所示般使延遲時間Td1
, Td2
數位地可變之方式外,亦可為類比地可變之構成。又,亦可為每當計數器電路208在對系統時脈SQ進行計數至預設定值Dsb(脈衝數Nck)為止時修正之一處之脈衝間隔Δwp’相對於標準之脈衝間隔Δwp增減例如1%之些微值之構成。此情形,在沿著掃描線之長度LBL之點光之一次掃描中,只要依據必要之倍率修正量改變將標準之脈衝間隔Δwp修正成脈衝間隔Δwp’之部位之數即可。例如,若設修正之部位之數為100,則在點光之一次掃描描繪之圖案在Y方向之尺寸增減相當於脈衝間隔Δwp之量。An example of a circuit configuration that makes the pulse interval Δwp of the system clock SQ partially variable, in addition to the method of digitally variable delay times Td 1 and Td 2 as shown in Figs. 23 and 24, can also be analogous. Change the composition. Alternatively, the pulse interval Δwp' at one of the corrections may increase or decrease with respect to the standard pulse interval Δwp every time the
再者,圖4中所示之光偏向器(AOM)81之ON/OFF切換,雖係回應作為描繪資料送出之串列位元列(位元值「0」或「1」之排列)進行,該位元值之送出,可與脈衝間隔Δwp部分増減之系統時脈SQ之脈衝訊號wp(圖22)同步。具體而言,在產生1個脈衝訊號wp致產生下1個脈衝訊號wp為止之期間,將1個位元值送出至光偏向器(AOM)81之驅動電路,甘味元值為「1」、而前1個位元值為「0」時,將光偏向器(AOM)81從OFF狀態切換為ON狀態即可。Furthermore, the ON/OFF switching of the optical deflector (AOM) 81 shown in Figure 4 is performed in response to the serial bit string sent as drawing data (arrangement of bit value "0" or "1") , The sending of the bit value can be synchronized with the pulse signal wp of the system clock SQ (Figure 22) with the partial increase and decrease of the pulse interval Δwp. Specifically, during the period between the generation of one pulse signal wp and the generation of the next pulse signal wp, one bit value is sent to the driving circuit of the optical deflector (AOM) 81, and the sweetness value is "1", When the first bit value is "0", just switch the optical deflector (AOM) 81 from OFF state to ON state.
控制部16,可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及可檢測旋轉圓筒DR兩端部之偏移之變位計YN1、YN2、YN3、YN4所檢測之資訊,調整以奇數號及偶數號描繪單元UW1~UW5進行之Y方向之描繪位置,以抵銷因旋轉圓筒DR之旋轉偏移所產生之Y方向誤差。又,控制部16,可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及可檢測旋轉圓筒DR兩端部之偏移之變位計YN1、YN2、YN3、YN4所檢測之資訊,變更以奇數號及偶數號描繪單元UW1~UW5進行之Y方向之長度(描繪線之長度LBL),以抵銷因旋轉圓筒DR之旋轉偏移所產生之Y方向之誤差。The
又,控制部16,可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以對準顯微鏡AM1、AM2檢測之資訊,調整以奇數號及偶數號描繪單元UW1~UW5進行之X方向或Y方向之描繪位置,以抵銷基板P之X方向或Y方向之誤差。Moreover, the
第1實施形態之曝光裝置EX,如上述般包含以來自複數個描繪單元UW1~UW5各個之描繪光束LB,以包含形成在基板P上之複數個描繪線LL1~LL5之描繪面内之既定點旋轉軸I為中心,於前述描繪面内相對第1光學平台23使第2光學平台25位移之作為位移修正機構之移動機構24。藉由對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),複數個描繪線LL1~LL5之全體對X方向及Y方向中之至少1者有誤差時,控制部16,可對移動機構24之驅動部進行驅動控制,使第2光學平台25往X方向及Y方向之至少一方位移抵消誤差之位移量。The exposure apparatus EX of the first embodiment includes, as described above, the drawing light beam LB from each of the drawing units UW1 to UW5 to include the predetermined points in the drawing surface of the drawing lines LL1 to LL5 formed on the substrate P The rotation axis I is the center, and the second optical table 25 is displaced relative to the first optical table 23 in the aforementioned drawing plane. The moving
當使第2光學平台25往X方向及Y方向之至少一方位移時,圖6所示之第4反射鏡59即往X方向或Y方向變位該位移量。特別是第4反射鏡59之Y方向變位,在使來自第3反射鏡58之描繪光束LB反射向+Y方向時,使之往Z方向位移。因此,藉由第1光學系41中之光束位移機構44,修正該往Z方向之位移。據此,對第4反射鏡59之後之第2光學系42及第3光學系43,即能維持光束LB通過正確的光路。When the second optical table 25 is displaced in at least one of the X direction and the Y direction, the
又,於第1實施形態之曝光裝置EX中,因對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),而使複數個描繪線LL1~LL5對X方向及Y方向之至少1個有誤差時,控制部16,可對移動機構24之驅動部進行驅動控制,使形成在基板P上之描繪線LL1~LL5往X方向或Y方向微幅移動抵消誤差之位移量。In addition, in the exposure apparatus EX of the first embodiment, due to the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement error, the plurality of drawing lines LL1 to LL5 are aligned in the X direction When there is an error in at least one of and in the Y direction, the
再者,第1實施形態之曝光裝置EX中,因對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),使複數個描繪線LL1~LL5中之奇數號或偶數號描繪線對X方向及Y方向之至少1個有誤差時,控制部16,可以抵消誤差之位移量之方式,對光束位移機構45進行驅動控制,以使形成在基板P上之偶數號描繪線LL2、LL4往X方向或Y方向微幅移動,以微調與形成在基板P上之奇數號描繪線LL1、LL3、LL5之相對位置關係。Furthermore, in the exposure apparatus EX of the first embodiment, due to the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement error, the odd number of the plurality of drawing lines LL1 to LL5 Or when the even-numbered drawing line has an error in at least one of the X-direction and the Y-direction, the
又,控制部16,亦可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以變位計YN1、YN2、YN3、YN4或對準顯微鏡AM1、AM2檢測之資訊,調整描繪單元UW1~UW5之Y倍率。例如,f-θ透鏡系85所含之遠心f-θ透鏡之像高與入射角成正比。因此,僅調整描繪單元UW1之Y倍率時,控制部16,可根據調整資訊(校準資訊)及以變位計YN1、YN2、YN3、YN4或對準顯微鏡AM1、AM2檢測之資訊,個別調整f-θ透鏡系85之焦點距離f,據以調整Y倍率。此整調整機構中,可組合例如用以進行倍率修正之彎板(bending plate)、遠心f-θ透鏡之倍率修正機構、用以進行位移調整之halving(可傾斜之平行平板玻璃)中之任一以上。此外,將以一定旋轉速度旋轉之旋轉多面鏡97之旋轉速度作成可略為改變,即可使與系統時脈SQ同步描繪之各點光SP(脈衝光)之間隔距離CXs略為改變(將相鄰點光彼此之重疊量略微錯開),結果亦能調整Y倍率。In addition, the
第1實施形態之曝光裝置EX,如上述般包含以來自複數個描繪單元UW1~UW5各個之描繪光束LB,以包含形成在基板P上之複數個描繪線LL1~LL5之描繪面内之既定點旋轉軸I為中心,於前述描繪面内相對第1光學平台23使第2光學平台25位移之作為位移修正機構之移動機構24。因對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),使複數個描繪線LL1~LL5相對Y方向有角度誤差,控制部16,可以對移動機構24之驅動部進行驅動控制,以使第2光學平台25旋轉抵銷角度誤差之旋轉量。The exposure apparatus EX of the first embodiment includes, as described above, the drawing light beam LB from each of the drawing units UW1 to UW5 to include the predetermined points in the drawing surface of the drawing lines LL1 to LL5 formed on the substrate P The rotation axis I is the center, and the second optical table 25 is displaced relative to the first optical table 23 in the aforementioned drawing plane. The moving
又,當產生需對各描繪單元UW1~UW5個別的進行旋轉修正時,可藉由使圖8所示之f-θ透鏡系85與第2柱面透鏡86繞光軸AXf微幅旋轉,據以使各描繪線LL1~LL5於基板P上個別的微幅旋轉(傾斜)。以旋轉多面鏡97掃描之光束LB,於非掃描方向係沿柱面透鏡86之母線成像(聚光),因此藉由柱面透鏡86繞光軸AXf之旋轉,可使各描繪線LL1~LL5旋轉(傾斜)。In addition, when it is necessary to individually perform rotation correction for each drawing unit UW1 to UW5, the f-
第1實施形態之曝光裝置EX,只要處理上述步驟S4之控制裝置進行之描繪位置調整之處理之至少1種即可。又,第1實施形態之曝光裝置EX,亦可組合上述步驟S4之控制裝置進行之描繪位置調整之處理以進行處理。The exposure apparatus EX of the first embodiment only needs to process at least one of the processing of the drawing position adjustment performed by the control device in step S4. In addition, the exposure apparatus EX of the first embodiment may be combined with the processing of the drawing position adjustment performed by the control device in step S4.
藉由以上説明之基板處理裝置之調整方法,於第1實施形態之曝光裝置EX,可省去(無需)用以抑制於基板P之寬度方向(Y方向)相鄰之圖案PT1~PT5彼此之接合誤差的測試曝光,或大幅減少其次數。因此,第1實施形態之曝光裝置EX,可縮短測試曝光、乾燥及顯影製程、曝光結果之確認作業等需耗費時間之校準作業。此外,第1實施形態之曝光裝置EX,可抑制因測試曝光而反饋之次數分之基板P的浪費。第1實施形態之曝光裝置EX,可更早的取得對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)。第1實施形態之曝光裝置EX,可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),預先進行修正,據以容易的修正在X方向或Y方向之位移、旋轉、倍率等之各成分。又,第1實施形態之曝光裝置EX,可提高在基板P上重疊曝光之精度。According to the adjustment method of the substrate processing apparatus described above, in the exposure apparatus EX of the first embodiment, it is possible to omit (no need) to suppress the pattern PT1 to PT5 adjacent to each other in the width direction (Y direction) of the substrate P The test exposure of the joint error may greatly reduce its frequency. Therefore, the exposure apparatus EX of the first embodiment can shorten the time-consuming calibration operations such as test exposure, drying and development processes, and confirmation of exposure results. In addition, the exposure apparatus EX of the first embodiment can suppress the waste of the substrate P in the number of feedbacks due to test exposure. The exposure apparatus EX of the first embodiment can obtain the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement error earlier. The exposure apparatus EX of the first embodiment can be corrected in advance based on the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the arrangement error between each other, so that it can be easily corrected in the X direction or the Y direction. The components of displacement, rotation, magnification, etc. In addition, the exposure apparatus EX of the first embodiment can improve the accuracy of overlapping exposure on the substrate P.
又,第1實施形態之曝光裝置EX,雖係以光偏向器81包含聲光元件,以旋轉多面鏡97進行描繪光束LB之點掃描為例作了説明,但除點掃描之外,亦可以是使用DMD(Digital Micro mirror Device)或SLM(Spatial light modulator:空間光調變器)描繪圖案之方式。In addition, although the exposure apparatus EX of the first embodiment has been described with the
[第2實施形態] 其次,説明第2實施形態之曝光裝置EX。又,於第2實施形態,為避免與第1實施形態重複之記載,僅針對與第1實施形態相異之部分進行説明,針對與第1實施形態相同之構成要素係賦予與第1實施形態相同符號加以説明。[Second Embodiment] Next, the exposure apparatus EX of the second embodiment will be explained. Also, in the second embodiment, in order to avoid overlapping descriptions with the first embodiment, only the differences from the first embodiment will be described, and the same components as those in the first embodiment will be given to the first embodiment. The same symbols are used for description.
第2實施形態之曝光裝置EX中,校準檢測系31之光電感測器31Cs並非檢測基準圖案(亦可作為基準標記加以利用)RMP而是檢測基板P上之對準標記Ks1~Ks3之反射光(散射光)。對準標記Ks1~Ks3係配置在通過複數個描繪單元UW1~UW5之各描繪線LL1~LL5之任一者之Y方向之基板P上之位置。當描繪光束LB之點光SP掃描到對準標記Ks1~Ks3時,於對準標記Ks1~Ks3反射之散射光即被光電感測器31Cs於亮視野或暗視野受光。In the exposure apparatus EX of the second embodiment, the photoelectric sensor 31Cs of the
控制部16根據從光電感測器31Cs輸出之訊號,檢測對準標記Ks1~Ks3之邊緣位置。並與第1實施形態同樣的,控制部16可從以光電感測器31Cs檢測之檢測訊號,求出對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)。The
又,控制部16,可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以對準顯微鏡AM1、AM2檢測之資訊,調整奇數號及偶數號描繪單元UW1~UW5之X方向或Y方向之描繪位置,以抵銷基板P之X方向或Y方向之誤差。當描繪光束LB之點光SP投射於對準標記Ks1~Ks3時,對準標記Ks1~Ks3上之感光層即感光,有可能於之後之製程中對準標記Ks1~Ks3潰散。因此,最好是能設置複數行對準標記Ks1~Ks3,對準顯微鏡AM1、AM2則讀取未因曝光潰散之對準標記Ks1~Ks3。In addition, the
因此,第2實施形態之曝光裝置EX,可於圖案描繪用資料中包含,可因曝光潰散之對準標記Ks1~Ks3之近旁以描繪光束LB之點光SP掃描,而在不希望因曝光潰散之對準標記Ks1~Ks3之近旁則以點光SP不會照射之方式,進行光偏向器(AOM)81之ON/OFF的資料。據此,可在以描繪光束LB進行曝光之同時、大致即時取得校準資訊,且亦能讀取對準標記Ks1~Ks3(基板P之位置)。Therefore, the exposure apparatus EX of the second embodiment can be included in the pattern drawing data, and the spot light SP of the drawing beam LB can be scanned near the alignment marks Ks1 to Ks3 that are collapsed due to exposure. In the vicinity of the alignment marks Ks1~Ks3, the ON/OFF data of the light deflector (AOM) 81 is performed in a way that the spot light SP will not be irradiated. According to this, it is possible to obtain calibration information approximately in real time while performing exposure with the drawing light beam LB, and also to read the alignment marks Ks1 to Ks3 (the position of the substrate P).
第2實施形態之曝光裝置EX,與第1實施形態之曝光裝置EX同樣的,可省去用以抑制接合誤差之測試曝光、或大幅減少其次數。除此之外,於第2實施形態之曝光裝置EX,可在基板P曝光圖案之同時,測量對應複數個描繪線LL1~LL5之配置狀態或彼此之配置關係等之誤差資訊,及早(大致即時)取得與之對應之調整資訊(校準資訊)。因此,第2實施形態之曝光裝置EX,可根據提早測量之誤差資訊、或調整資訊(校準資訊),一邊進行元件圖案之曝光、一邊逐次進行為保持既定精度之修正及調整,而能容易的抑制於多描繪頭方式中成問題之於X方向或Y方向之位移誤差、旋轉誤差、倍率誤差等各誤差成分之描繪單元間接合精度之降低。據此,第2實施形態之曝光裝置EX,能將基板P上重疊曝光時之重疊精度維持於高狀態。The exposure apparatus EX of the second embodiment is the same as the exposure apparatus EX of the first embodiment, and it is possible to omit or greatly reduce the number of test exposures for suppressing bonding errors. In addition, in the exposure apparatus EX of the second embodiment, the pattern of the substrate P can be exposed at the same time, and error information such as the arrangement state or mutual arrangement relationship of the plurality of drawing lines LL1 to LL5 can be measured, early (almost real-time) ) Obtain the corresponding adjustment information (calibration information). Therefore, the exposure apparatus EX of the second embodiment can easily perform corrections and adjustments to maintain a predetermined accuracy while exposing the device pattern based on the error information of the early measurement or the adjustment information (calibration information). It suppresses the degradation of the joint accuracy between the drawing units of each error component such as displacement error, rotation error, and magnification error in the X-direction or Y-direction that are problematic in the multi-drawing head method. According to this, the exposure apparatus EX of the second embodiment can maintain the superposition accuracy during superposition exposure on the substrate P in a high state.
<元件製造方法> 其次,參照圖25,說明元件製造方法。圖25係顯示各實施形態之元件製造方法的流程圖。<Component manufacturing method> Next, referring to FIG. 25, a method of manufacturing the element will be described. Fig. 25 is a flowchart showing the device manufacturing method of each embodiment.
圖25所示之元件製造方法,首先,係進行例如使用有機EL等自發光元件形成之顯示面板之功能、性能設計,以CAD等設計所需之電路圖案及配線圖案(步驟S201)。並準備捲繞有作為顯示面板之基材之可撓性基板P(樹脂薄膜、金屬箔膜、塑膠等)之供應用捲筒(步驟S202)。又,於此步驟S202中準備之捲筒狀基板P,可以是視需要將其表面改質者、或事前已形成底層(例如透過印記(imprint)方式之微小凹凸)者、或預先積層有光感應性之功能膜或透明膜(絶緣材料)者。In the device manufacturing method shown in FIG. 25, first, the function and performance design of a display panel formed using a self-luminous device such as organic EL is performed, and the required circuit patterns and wiring patterns are designed by CAD or the like (step S201). And prepare a supply reel on which the flexible substrate P (resin film, metal foil film, plastic, etc.) as the base material of the display panel is wound (step S202). In addition, the roll-shaped substrate P prepared in this step S202 may be one whose surface has been modified as necessary, or one that has been formed in advance (for example, micro-concave and convex through imprint method), or one that has been pre-laminated with light. Inductive functional film or transparent film (insulating material).
接著,於基板P上形成構成顯示面板元件以電極或配線、絶緣膜、TFT(薄膜半導體)等構成之底板層,並以積層於該底板之方式形成以有機EL等自發光元件構成之發光層(顯示像素部)(步驟S203)。於此步驟S203中,亦包含使用於先前各實施形態説明之曝光裝置EX,對光阻劑層進行曝光使之顯影的習知微影製程、對取代光阻劑而塗有感光性矽烷耦合劑之基板P進行圖案曝光以將表面改質為親撥水性以形成圖案的曝光製程、對光感應性之觸媒層進行圖案曝光以賦予選擇性之鍍敷還元性並以無電解鍍敷法形成金屬膜圖案(配線、電極等)的濕式製程、或以含有銀奈米粒子之導電性墨水等描繪圖案的印刷製程等之處理。Next, a base layer composed of electrodes or wiring, insulating film, TFT (thin film semiconductor), etc., which constitute the display panel element is formed on the substrate P, and a light-emitting layer composed of self-luminous elements such as organic EL is formed by stacking on the base plate (Display pixel portion) (Step S203). In this step S203, it also includes the conventional lithography process of exposing and developing the photoresist layer using the exposure device EX described in the previous embodiments, and coating the photoresist with a photosensitive silane coupling agent The substrate P is subjected to pattern exposure to modify the surface to be water-repellent to form an exposure process for patterning, and the photosensitive catalyst layer is subjected to pattern exposure to impart selective plating reduction properties, and is formed by electroless plating Wet process of metal film patterns (wiring, electrodes, etc.), or printing process of drawing patterns with conductive ink containing silver nanoparticles.
接著,針對以捲筒方式於長條基板P上連續製造之每一顯示面板元件切割基板P、或於各顯示面板元件表面貼合保護膜(耐環境障壁層)或彩色濾光片膜等,組裝元件(步驟S204)。接著,進行顯示面板元件是否可正常作動、或是否滿足所欲性能及特性之檢查步驟(步驟S205)。經由以上方式,即能製造顯示面板(可撓性顯示器)。又,作成可撓性長條片狀基板之電子元件不限於顯示面板,亦可以是做為用以連接搭載於汽車或電車等之各種電子零件間之導線(配線帶)之可撓性配線網。Then, cut the substrate P for each display panel element continuously manufactured on the long substrate P in a roll manner, or attach a protective film (environmental barrier layer) or color filter film on the surface of each display panel element, etc., Assemble components (step S204). Then, a step of checking whether the display panel element can operate normally or whether it meets the desired performance and characteristics is performed (step S205). Through the above methods, display panels (flexible displays) can be manufactured. In addition, the electronic components made into the flexible long sheet-like substrate are not limited to the display panel, but can also be used as a flexible wiring network for connecting wires (wiring tapes) between various electronic parts mounted in automobiles, trams, etc. .
1:元件製造系統
11:描繪裝置
12:基板搬送機構
13:裝置框架
14:旋轉位置檢測機構
16:控制部
23:第1光學平台
24:移動機構
25:第2光學平台
31:校準檢測系
31Cs:光電感測器
31f:遮光構件
73:第4分束器
81:光偏向器
83:掃描器
96:反射鏡
97:旋轉多面鏡
97a:旋轉軸
97b:反射面
98:原點檢測器
AM1、AM2:對準顯微鏡
DR:旋轉圓筒
EN1、EN2、EN3、EN4:編碼器讀頭
EX:曝光裝置
I:旋轉軸
LL1~LL5:描繪線
PBS:偏光分束器
UW1~UW5:描繪單元1: Component manufacturing system
11: Drawing device
12: Substrate transport mechanism
13: device frame
14: Rotation position detection mechanism
16: Control Department
23: 1st optical platform
24: mobile agency
25: 2nd optical platform
31: Calibration and Testing System
31Cs:
[圖1]係顯示第1實施形態之曝光裝置(基板處理裝置)之全體構成的圖。 [圖2]係顯示圖1之曝光裝置主要部之配置的立體圖。 [圖3]係顯示在基板上之對準顯微鏡與描繪線之配置關係的圖。 [圖4]係顯示圖1之曝光裝置之旋轉圓筒及描繪裝置之構成的圖。 [圖5]係顯示圖1之曝光裝置主要部之配置的俯視圖。 [圖6]係顯示圖1之曝光裝置之分歧光學系之構成的立體圖。 [圖7]係顯示圖1之曝光裝置之複數個掃描器之配置關係的圖。 [圖8]係說明用以消除因掃描器反射面之傾斜造成之描繪線偏移之光學構成的圖。 [圖9]係顯示在基板上之對準顯微鏡與描繪線與編碼器讀頭之配置關係的立體圖。 [圖10]係顯示圖1之曝光裝置之旋轉圓筒之表面構造的立體圖。 [圖11]係顯示在基板上之描繪線與描繪圖案之位置關係的説明圖。 [圖12]係顯示光束點與描繪線之關係的説明圖。 [圖13]係模擬在基板上所得之2脈衝份之光束點之重疊量造成之強度分布變化的圖表。 [圖14]係關於第1實施形態之曝光裝置之調整方法的流程圖。 [圖15]係以示意方式顯示旋轉圓筒之基準圖案與描繪線之關係的説明圖。 [圖16]係以示意方式顯示從將來自旋轉圓筒之基準圖案之反射光於亮視野受光之光電感測器輸出之訊號的説明圖。 [圖17]係以示意方式顯示將來自旋轉圓筒之基準圖案之反射光於暗視野受光之光電感測器的説明圖。 [圖18]係以示意方式顯示從將來自旋轉圓筒之基準圖案之反射光於暗視野受光之光電感測器輸出之訊號的説明圖。 [圖19]係以示意方式顯示旋轉圓筒之基準圖案彼此之位置關係的説明圖。 [圖20]係以示意方式顯示複數個描繪線之相對位置關係的説明圖。 [圖21]係以示意方式顯示基板之每單位時間之移動距離與移動距離内所含之描繪線條數之關係的説明圖。 [圖22]係以示意方式顯示與脈衝光源之系統時脈同步之脈衝光的説明圖。 [圖23]係說明產生脈衝光源之系統時脈之電路構成之一例之方塊圖。 [圖24]係顯示圖23之電路構成中各部之訊號之遷移之時序圖。 [圖25]係顯示各元件製造方法的流程圖。Fig. 1 is a diagram showing the overall configuration of the exposure apparatus (substrate processing apparatus) of the first embodiment. [Fig. 2] A perspective view showing the configuration of the main parts of the exposure apparatus in Fig. 1. [Fig. [Figure 3] is a diagram showing the arrangement relationship between the alignment microscope and the drawing line on the substrate. [Fig. 4] is a diagram showing the structure of the rotating cylinder and the drawing device of the exposure device of Fig. 1. [Fig. [FIG. 5] A plan view showing the arrangement of the main parts of the exposure apparatus of FIG. 1. [FIG. 6] A perspective view showing the structure of a branched optical system of the exposure device in FIG. 1. [Fig. 7] A diagram showing the arrangement relationship of a plurality of scanners of the exposure device in Fig. 1. [Fig. [Fig. 8] A diagram illustrating the optical structure used to eliminate the deviation of the drawing line caused by the tilt of the reflective surface of the scanner. [Figure 9] is a perspective view showing the arrangement relationship between the alignment microscope and the drawing line on the substrate and the encoder read head. [Fig. 10] A perspective view showing the surface structure of the rotating cylinder of the exposure device in Fig. 1. [Fig. [Fig. 11] An explanatory diagram showing the positional relationship between the drawing line and the drawing pattern on the substrate. [Fig. 12] is an explanatory diagram showing the relationship between the beam spot and the drawing line. [Figure 13] A graph that simulates the intensity distribution change caused by the overlap of the beam spots of 2 pulses obtained on the substrate. [FIG. 14] It is a flowchart about the adjustment method of the exposure apparatus of 1st Embodiment. [Fig. 15] is an explanatory diagram schematically showing the relationship between the reference pattern of the rotating cylinder and the drawing line. [Fig. 16] is an explanatory diagram schematically showing the signal output from the photoelectric sensor that receives the reflected light from the reference pattern of the rotating cylinder in the bright field. [Fig. 17] is an explanatory diagram schematically showing a photoelectric sensor that receives light reflected from a reference pattern of a rotating cylinder in a dark field. [Figure 18] is an explanatory diagram schematically showing the signal output from the photoelectric sensor that receives the reflected light from the reference pattern of the rotating cylinder in the dark field. [Fig. 19] is an explanatory diagram schematically showing the positional relationship between the reference patterns of the rotating cylinder. [Fig. 20] is an explanatory diagram schematically showing the relative positional relationship of a plurality of drawing lines. [Fig. 21] is an explanatory diagram schematically showing the relationship between the moving distance per unit time of the substrate and the number of drawing lines contained in the moving distance. [Fig. 22] An explanatory diagram showing the pulsed light synchronized with the system clock of the pulsed light source in a schematic manner. [FIG. 23] A block diagram illustrating an example of the circuit configuration of the system clock for generating a pulsed light source. [Fig. 24] is a timing diagram showing the transition of signals of various parts in the circuit configuration of Fig. 23. [Fig. 25] A flowchart showing the manufacturing method of each element.
31:校準檢測系 31: Calibration and Testing System
31Cs:光電感測器 31Cs: Photoelectric sensor
41:第1光學系 41: First Optical Department
42:第2光學系 42: The second optical system
43:第3光學系 43: The 3rd Department of Optics
44:光束位移機構 44: beam displacement mechanism
45:光束位移機構 45: beam displacement mechanism
51:1/2波長板 51: 1/2 wavelength plate
52:偏光鏡(偏光分束器) 52: Polarizer (polarizing beam splitter)
53:散光器 53: Diffuser
54:第1反射鏡 54: 1st mirror
55:第1中繼透鏡 55: The first relay lens
56:第2中繼透鏡 56: The second relay lens
57:第2反射鏡 57: 2nd mirror
58:第3反射鏡 58: 3rd mirror
59:第4反射鏡 59: 4th mirror
60:第1分束器 60: 1st beam splitter
61:第5反射鏡 61: 5th mirror
62:第2分束器 62: 2nd beam splitter
63:第3分束器 63: 3rd beam splitter
64:第6反射鏡 64: 6th mirror
71:第7反射鏡 71: 7th mirror
72:第8反射鏡 72: 8th mirror
73:第4分束器 73: 4th beam splitter
74:第9反射鏡 74: 9th mirror
81:光偏向器 81: Optical deflector
82:1/4波長板 82: 1/4 wavelength plate
84:彎折鏡 84: Bending Mirror
85:f-θ透鏡系 85: f-θ lens system
86:柱面透鏡 86: Cylindrical lens
86B:Y倍率修正用光學構件(透鏡群) 86B: Optical component for Y magnification correction (lens group)
91:中繼透鏡 91: Relay lens
92:遮光板 92: visor
93:中繼透鏡 93: Relay lens
94:中繼透鏡 94: Relay lens
95:柱面透鏡 95: Cylindrical lens
97:旋轉多面鏡 97: Rotating polygon mirror
97a:旋轉軸 97a: Rotation axis
97b:反射面 97b: reflective surface
AX2:旋轉中心線 AX2: Rotation centerline
CNT:光源裝置 CNT: light source device
DR:旋轉圓筒 DR: rotating cylinder
EN1、EN2、EN3、EN4:編碼器讀頭 EN1, EN2, EN3, EN4: Encoder reading head
GPa、GPb:標尺部 GPa, GPb: scale part
I:旋轉軸 I: Rotation axis
LB:光束 LB: beam
Le1~Le4:設置方位線 Le1~Le4: Set bearing line
P:基板 P: substrate
PBS:偏光分束器 PBS: Polarizing beam splitter
Sf2:軸部 Sf2: Shaft
SL:分歧光學系 SL: Branch Optics
UW1~UW5:描繪單元 UW1~UW5: drawing unit
Claims (12)
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TW109101148A TWI709006B (en) | 2014-04-01 | 2015-03-27 | Pattern drawing device and pattern drawing method |
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TWI684836B (en) | 2020-02-11 |
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TWI674484B (en) | 2019-10-11 |
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CN106133610B (en) | 2017-12-29 |
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CN106133610A (en) | 2016-11-16 |
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