TWI639064B - Substrate processing device and element manufacturing method - Google Patents

Substrate processing device and element manufacturing method Download PDF

Info

Publication number
TWI639064B
TWI639064B TW104109884A TW104109884A TWI639064B TW I639064 B TWI639064 B TW I639064B TW 104109884 A TW104109884 A TW 104109884A TW 104109884 A TW104109884 A TW 104109884A TW I639064 B TWI639064 B TW I639064B
Authority
TW
Taiwan
Prior art keywords
substrate
light
line
rotating cylinder
units
Prior art date
Application number
TW104109884A
Other languages
Chinese (zh)
Other versions
TW201600941A (en
Inventor
加藤正紀
奈良奎
鈴木智也
渡辺智行
鬼頭義昭
堀正和
Original Assignee
日商尼康股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商尼康股份有限公司 filed Critical 日商尼康股份有限公司
Publication of TW201600941A publication Critical patent/TW201600941A/en
Application granted granted Critical
Publication of TWI639064B publication Critical patent/TWI639064B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/24Curved surfaces
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)

Abstract

基板處理裝置,係以藉由複數個描繪單元之各描繪線在基板上描繪之圖案彼此能隨著基板往長條方向之移動而在基板之寬度方向接合之方式,將複數個描繪單元配置於基板之寬度方向。控制部,預先儲存關於藉由複數個描繪單元之各個形成在基板上之描繪線彼此之位置關係之校準資訊,且根據該校準資訊與從移動測量裝置輸出之移動資訊,調整藉由複數個描繪單元之各個之描繪束形成在基板上之圖案之描繪位置。 The substrate processing device arranges a plurality of drawing units on the substrate in such a manner that the patterns drawn on the substrate by the drawing lines of the plurality of drawing units can be joined to each other in the width direction of the substrate as the substrate moves in a long direction. The width direction of the substrate. The control section stores in advance calibration information on the positional relationship of the drawing lines formed on the substrate by each of the plurality of drawing units, and adjusts the drawing by the plurality of drawing based on the calibration information and the movement information output from the mobile measurement device. Each of the drawing beams of the unit is a drawing position of a pattern formed on the substrate.

Description

基板處理裝置及元件製造方法 Substrate processing device and element manufacturing method

本發明係關於用以在基板上形成細微電子元件之構造體之基板處理裝置、元件製造方法及基板處理方法。 The present invention relates to a substrate processing apparatus, a component manufacturing method, and a substrate processing method for forming a structure of a microelectronic element on a substrate.

作為習知基板處理裝置,有一種在片狀媒體(基板)上之既定位置進行描繪的製造裝置廣為人知(例如,參照專利文獻1)。專利文獻1中記載之製造裝置,係對於寬度方向易伸縮之可撓性長條片狀基板,藉檢測對準標記以測量片狀基板之伸縮,依據伸縮修正描繪位置(加工位置)。 As a conventional substrate processing apparatus, there is a well-known manufacturing apparatus for drawing on a predetermined position on a sheet-like medium (substrate) (for example, refer to Patent Document 1). The manufacturing device described in Patent Document 1 is a flexible long sheet substrate that can be expanded and contracted in the width direction, and detects the alignment mark to measure the expansion and contraction of the sheet substrate, and corrects the drawing position (processing position) based on the expansion and contraction.

專利文獻1:日本特開2010-91990號公報 Patent Document 1: Japanese Patent Application Laid-Open No. 2010-91990

於專利文獻1之製造裝置,係藉由一邊將基板往搬送方向搬送、一邊切換空間調變元件(DMD:Digital Micro mirror Device)據以進行曝光,以複數個描繪單元將圖案描繪於基板。於專利文獻1之製造裝置,雖係將於基板之寬度方向相鄰之圖案彼此以複數個描繪單元加以接合曝光,但為抑制接合曝光之誤差,係反饋(feedback)進行測試(test)曝光與顯影所生成之在接合部之圖案之位置誤差的測量結果。然而,包含此種測試曝光、顯影、測量等作業之反饋步驟,雖亦視其頻度,但卻得暫時停止製造線,不僅降低製品之生產性、亦有可能產生基板之浪費。 In the manufacturing apparatus of Patent Document 1, a substrate is moved by a space modulation element (DMD: Digital Micro Mirror Device) while the substrate is being moved in the conveying direction, and the pattern is drawn on the substrate by a plurality of drawing units. In the manufacturing device of Patent Document 1, although the patterns adjacent to each other in the width direction of the substrate are bonded and exposed by a plurality of drawing units, in order to suppress the error of the bonded exposure, feedback is performed to test the exposure and The measurement results of the position error of the pattern at the joint produced by the development. However, including the feedback steps of such tests as exposure, development, and measurement, although depending on its frequency, it is necessary to temporarily stop the production line, which not only reduces the productivity of the product, but also wastes the substrate.

本發明之態樣係有鑑於上述課題而生,其目的在提供一種即使是使用複數個描繪單元於基板之寬度方向接合圖案以進行曝光(描繪)之情形時,亦能降低圖案彼此之接合誤差,而能於基板高精度安定的描繪大面積圖案之基板處理裝置、元件製造方法及基板處理方法。 The aspect of the present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a method of reducing the joining error between patterns even when a plurality of drawing units are used to join the patterns in the width direction of the substrate for exposure (drawing). , And a substrate processing device capable of drawing a large-area pattern on a substrate with high accuracy and stability, a device manufacturing method, and a substrate processing method.

本發明第1態樣之基板處理裝置,具備:搬送裝置,將長條片狀基板之一部分一邊以具有往該長條方向彎曲之支承面之支承構件支承一邊使其往該長條方向移動;描繪裝置,包含對以該支承面支承之該基板一邊投射已調變之描繪束、一邊在與該長條方向交叉之該基板之寬度方向於較該基板之寬度窄之範圍掃描並沿著以該掃描所得之描繪線描繪既定圖案之複數個描繪單元,以該複數個描繪單元之各描繪線描繪於該基板上之圖案彼此隨著該基板往長條方向之移動而於該基板之寬度方向接合之方式,將該複數個描繪單元配置於該基板之寬度方向;移動測量裝置,輸出對應該搬送裝置進行之該基板之移動量或移動位置之移動資訊;以及控制部,預先儲存關於藉由該複數個描繪單元之各個形成在該基板上之該描繪線彼此之位置關係之校準資訊,且根據該校準資訊與從該移動測量裝置輸出之移動資訊,調整藉由該複數個描繪單元之各個之該描繪束形成在該基板上之圖案之描繪位置。 A substrate processing apparatus according to a first aspect of the present invention includes a conveying device that moves a portion of the long sheet-shaped substrate while supporting a portion of the long sheet-shaped substrate with a support member bent in the long direction while moving the long piece-like substrate in the long direction; The drawing device includes, while projecting a modulated drawing beam on the substrate supported by the support surface, scanning in a width direction of the substrate crossing the strip direction in a narrower range than the width of the substrate, and scanning along the The drawing lines obtained by the scanning draw a plurality of drawing units of a predetermined pattern, and the patterns drawn on the substrate by each drawing line of the plurality of drawing units are in the width direction of the substrate as the substrate moves in the strip direction In the joining method, the plurality of drawing units are arranged in the width direction of the substrate; the moving measuring device outputs the movement information of the movement amount or position of the substrate corresponding to the carrying device; and the control section stores in advance Each of the plurality of drawing units forms calibration information on the positional relationship of the drawing lines on the substrate, and according to the calibration information And the mobile information output from the mobile measurement device, adjusting a drawing position of a pattern formed on the substrate by the drawing beam of each of the plurality of drawing units.

本發明第2態樣之元件製造方法,使用本發明第1態樣之基板處理裝置以將該圖案形成於該基板。 According to the second aspect of the present invention, the element manufacturing method uses the substrate processing apparatus of the first aspect of the present invention to form the pattern on the substrate.

本發明第3態樣之基板處理方法,係將電子元件之圖案描繪在長條片狀基板,其特徵在於,包含:以既定速度將該片狀基板往長條方向搬送之動作;使從脈衝光源裝置以頻率Fz脈衝振盪之紫外波長域之光束 在該片狀基板之表面聚光成點光,且藉由光掃描器使該光束振盪,使該點光沿著往與該長條方向交叉之寬度方向延伸之長度LBL之描繪線掃描之動作;以及在該點光掃描之期間,根據對應該圖案之描繪資料調變該點光之強度之動作;設該光束之一個脈衝之聚光形成之點光與下一個脈衝之聚光形成之點光沿著該描繪線之間隔為CXs、該點光沿著該描繪線之實效尺寸為Xs、該點光掃描該長度LBL之掃描時間為Ts時,設定成滿足Xs>CXs且Fz>LBL/(Ts‧Xs)之關係。 The substrate processing method according to the third aspect of the present invention is a method for drawing a pattern of an electronic component on a long sheet substrate, and includes the following operations: conveying the sheet substrate in a long direction at a predetermined speed; Light source device oscillating light beam in ultraviolet wavelength range with frequency Fz pulse Condensing spot light on the surface of the sheet substrate, and oscillating the light beam by a light scanner to scan the spot light along a drawing line of a length LBL extending in a width direction crossing the strip direction ; And during the scanning of the spot light, the action of modulating the intensity of the spot light according to the drawing data corresponding to the pattern; set the spot light formed by the condensed light of one pulse of the beam and the spot formed by the condensed light of the next pulse When the interval between the light along the drawing line is CXs, the effective size of the point light along the drawing line is Xs, and the scanning time of the point light scanning the length LBL is Ts, it is set to satisfy Xs> CXs and Fz> LBL / (Ts‧Xs).

本發明第4態樣之基板處理方法,係將電子元件之圖案描繪在長條片狀基板,其特徵在於,包含:以既定速度將該片狀基板往長條方向搬送之步驟;使從脈衝光源裝置以頻率Fz脈衝振盪之紫外波長域之光束在該片狀基板之表面聚光成點光,且使該點光沿著往與該片狀基板之長條方向交叉之寬度方向延伸之描繪線掃描之步驟;以及在該點光掃描之期間,根據該圖案分割成像素單位之描繪資料,藉由光切換元件調變該光束之強度之步驟;將該光切換元件調變時之回應頻率Fss與該光束之脈衝振盪之頻率Fz設定成Fz>Fss之關係。 According to a fourth aspect of the present invention, a substrate processing method includes drawing a pattern of an electronic component on a long sheet-shaped substrate, which is characterized in that it includes the steps of transporting the sheet-shaped substrate in a long direction at a predetermined speed; The light source device converges a light beam in the ultraviolet wavelength range oscillated with a frequency Fz into a spot light on the surface of the sheet substrate, and draws the point light along a width direction that intersects the strip direction of the sheet substrate. The step of line scanning; and the step of modulating the intensity of the light beam by a light switching element during the point light scanning according to the drawing data divided into pixel units according to the pattern; the response frequency when the light switching element is modulated The relationship between Fss and the frequency Fz of the pulse oscillation of the beam is set to Fz> Fss.

根據本發明之態樣,能提供一種降低使用複數個描繪單元於基板之寬度方向接合圖案進行曝光時之接合誤差,而能對基板合適地進行使用複數個描繪單元進行之描繪的基板處理裝置、元件製造方法。再者,可提供一種提高一個描繪單元沿著描繪線描繪圖案時之描繪精度(曝光量之均勻性等)或忠實度之基板處理方法。 According to the aspect of the present invention, it is possible to provide a substrate processing apparatus capable of reducing a bonding error when a plurality of drawing units are used to expose a bonding pattern in a width direction of a substrate and appropriately performing drawing using a plurality of drawing units on a substrate. Element manufacturing method. Furthermore, a substrate processing method capable of improving the drawing accuracy (uniformity of exposure amount, etc.) or the fidelity when a drawing unit draws a pattern along a drawing line can be provided.

1‧‧‧元件製造系統 1‧‧‧component manufacturing system

11‧‧‧描繪裝置 11‧‧‧ depicting device

12‧‧‧基板搬送機構 12‧‧‧ substrate transfer mechanism

13‧‧‧裝置框架 13‧‧‧device frame

14‧‧‧旋轉位置檢測機構 14‧‧‧rotation position detection mechanism

16‧‧‧控制部 16‧‧‧Control Department

23‧‧‧第1光學平台 23‧‧‧The first optical platform

24‧‧‧移動機構 24‧‧‧ Mobile agency

25‧‧‧第2光學平台 25‧‧‧The second optical platform

31‧‧‧校準檢測系 31‧‧‧ Calibration and Inspection Department

31Cs‧‧‧光電感測器 31Cs‧‧‧Photoelectric sensor

31f‧‧‧遮光構件 31f‧‧‧Shading member

73‧‧‧第4分束器 73‧‧‧ 4th beam splitter

81‧‧‧光偏向器 81‧‧‧light deflector

83‧‧‧掃描器 83‧‧‧Scanner

96‧‧‧反射鏡 96‧‧‧Reflector

97‧‧‧旋轉多面鏡 97‧‧‧ rotating polygon mirror

97a‧‧‧旋轉軸 97a‧‧‧rotation shaft

97b‧‧‧反射面 97b‧‧‧Reflective surface

98‧‧‧原點檢測器 98‧‧‧ origin detector

AM1、AM2‧‧‧對準顯微鏡 AM1, AM2‧‧‧ aiming microscope

DR‧‧‧旋轉圓筒 DR‧‧‧rotating cylinder

EN1、EN2、EN3、EN4‧‧‧編碼器讀頭 EN1, EN2, EN3, EN4‧‧‧ encoder read head

EX‧‧‧曝光裝置 EX‧‧‧Exposure device

I‧‧‧旋轉軸 I‧‧‧rotation axis

LL1~LL5‧‧‧描繪線 LL1 ~ LL5‧‧‧Drawing line

PBS‧‧‧偏向分束器 PBS‧‧‧biased beam splitter

UW1~UW5‧‧‧描繪單元 UW1 ~ UW5‧‧‧Drawing unit

圖1係顯示第1實施形態之曝光裝置(基板處理裝置)之全體構成的圖。 FIG. 1 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment.

圖2係顯示圖1之曝光裝置主要部之配置的立體圖。 FIG. 2 is a perspective view showing a configuration of a main part of the exposure apparatus of FIG. 1. FIG.

圖3係顯示在基板上之對準顯微鏡與描繪線之配置關係的圖。 FIG. 3 is a diagram showing an arrangement relationship between an alignment microscope and a drawing line on a substrate.

圖4係顯示圖1之曝光裝置之旋轉圓筒及描繪裝置之構成的圖。 FIG. 4 is a diagram showing the configuration of a rotating cylinder and a drawing device of the exposure apparatus of FIG. 1. FIG.

圖5係顯示圖1之曝光裝置主要部之配置的俯視圖。 FIG. 5 is a plan view showing a configuration of a main part of the exposure apparatus of FIG. 1. FIG.

圖6係顯示圖1之曝光裝置之分歧光學系之構成的立體圖。 FIG. 6 is a perspective view showing a configuration of a branch optical system of the exposure apparatus of FIG. 1.

圖7係顯示圖1之曝光裝置之複數個掃描器之配置關係的圖。 FIG. 7 is a diagram showing an arrangement relationship of a plurality of scanners of the exposure apparatus of FIG. 1. FIG.

圖8係說明用以消除因掃描器反射面之傾斜造成之描繪線偏移之光學構成的圖。 FIG. 8 is a diagram illustrating an optical configuration for eliminating a shift in a drawing line caused by a tilt of a reflecting surface of a scanner.

圖9係顯示在基板上之對準顯微鏡與描繪線與編碼器讀頭之配置關係的立體圖。 FIG. 9 is a perspective view showing an arrangement relationship between an alignment microscope, a drawing line, and an encoder read head on a substrate.

圖10係顯示圖1之曝光裝置之旋轉圓筒之表面構造的立體圖。 FIG. 10 is a perspective view showing a surface structure of a rotating cylinder of the exposure apparatus of FIG. 1. FIG.

圖11係顯示在基板上之描繪線與描繪圖案之位置關係的說明圖。 11 is an explanatory diagram showing a positional relationship between a drawing line and a drawing pattern on a substrate.

圖12係顯示光束點與描繪線之關係的說明圖。 FIG. 12 is an explanatory diagram showing a relationship between a beam spot and a drawing line.

圖13係模擬在基板上所得之2脈衝份之光束點之重疊量造成之強度分布變化的圖表。 FIG. 13 is a graph simulating a change in the intensity distribution caused by the overlapping amount of the beam points of two pulses obtained on the substrate.

圖14係關於第1實施形態之曝光裝置之調整方法的流程圖。 FIG. 14 is a flowchart of a method of adjusting the exposure apparatus according to the first embodiment.

圖15係以示意方式顯示旋轉圓筒之基準圖案與描繪線之關係的說明圖。 15 is an explanatory diagram schematically showing a relationship between a reference pattern of a rotating cylinder and a drawing line.

圖16係以示意方式顯示從將來自旋轉圓筒之基準圖案之反射光於亮視野受光之光電感測器輸出之訊號的說明圖。 FIG. 16 is an explanatory diagram schematically showing a signal output from a photo sensor that reflects light reflected from a reference pattern of a rotating cylinder in a bright field of light.

圖17係以示意方式顯示將來自旋轉圓筒之基準圖案之反射光於暗視野受光之光電感測器的說明圖。 FIG. 17 is an explanatory diagram schematically showing a photo sensor that reflects light reflected from a reference pattern of a rotating cylinder in a dark field.

圖18係以示意方式顯示從將來自旋轉圓筒之基準圖案之反射光於暗視野受光之光電感測器輸出之訊號的說明圖。 FIG. 18 is an explanatory diagram schematically showing a signal output from a photo sensor that reflects light reflected from a reference pattern of a rotating cylinder in a dark field.

圖19係以示意方式顯示旋轉圓筒之基準圖案彼此之位置關係的說明圖。 FIG. 19 is an explanatory diagram schematically showing the positional relationship between the reference patterns of the rotating cylinder.

圖20係以示意方式顯示複數個描繪線之相對位置關係的說明圖。 FIG. 20 is an explanatory diagram schematically showing the relative positional relationship of a plurality of drawn lines.

圖21係以示意方式顯示基板之每單位時間之移動距離與移動距離內所含之描繪線條數之關係的說明圖。 FIG. 21 is an explanatory diagram schematically showing the relationship between the moving distance per unit time of the substrate and the number of drawn lines included in the moving distance.

圖22係以示意方式顯示與脈衝光源之系統時脈同步之脈衝光的說明圖。 FIG. 22 is an explanatory diagram showing a pulsed light synchronized with the clock of the system of the pulsed light source in a schematic manner.

圖23係說明產生脈衝光源之系統時脈之電路構成之一例之方塊圖。 FIG. 23 is a block diagram illustrating an example of a circuit configuration of a system clock generating a pulse light source.

圖24係顯示圖23之電路構成中各部之訊號之遷移之時序圖。 FIG. 24 is a timing chart showing the signal migration of each part in the circuit configuration of FIG. 23.

圖25係顯示各元件製造方法的流程圖。 FIG. 25 is a flowchart showing a method of manufacturing each element.

針對用以實施本發明之形態(實施形態),一邊參照圖面一邊詳細說明。本發明當然不受限於以下實施形態記載之內容。又,以下記載之構成要素中,包含業者容易想定者、以及實質相同之物。此外,以下記載之構成要素可適當組合。又,在不脫離本發明要旨範圍內,可進行構成要素之各種省略、置換或變更。 The aspect (embodiment) for implementing the present invention will be described in detail with reference to the drawings. The invention is not limited to the contents described in the following embodiments. In addition, the constituent elements described below include those that are easy to be imagined by the industry and those that are substantially the same. In addition, the constituent elements described below can be appropriately combined. In addition, various omissions, substitutions, or changes of the constituent elements can be made without departing from the scope of the present invention.

〔第1實施形態〕 [First Embodiment]

圖1係顯示第1實施形態之曝光裝置(基板處理裝置)之全體構成的 圖。第1實施形態之基板處理裝置係對基板P施以曝光處理的曝光裝置EX,曝光裝置EX組裝在對曝光後基板P施以各種處理以製造元件之元件製造系統1中。首先,說明元件製造系統1。 FIG. 1 is a diagram showing the overall configuration of an exposure apparatus (substrate processing apparatus) according to the first embodiment. Illustration. The substrate processing apparatus of the first embodiment is an exposure apparatus EX that applies an exposure process to the substrate P, and the exposure apparatus EX is incorporated in the element manufacturing system 1 that applies various processes to the exposed substrate P to produce elements. First, the component manufacturing system 1 will be described.

<元件製造系統> <Component manufacturing system>

元件製造系統1,係製造作為元件之可撓性顯示器的生產線(可撓性顯示器製造線)。可撓性顯示器,例如有機EL顯示器等。此元件製造系統1,係將可撓性(flexible)長條基板P捲成筒狀之未圖示之供應用捲筒送出該基板P,在對送出之基板P連續的施以各種處理後,將處理後之基板P作為可撓性元件捲繞於未圖示之回收用捲筒之所謂的捲對捲(Ro11 to Ro11)方式。於第1實施形態之元件製造系統1,係將薄膜狀之片狀基板P從供應用捲筒送出,從供應用捲筒送出之基板P依序經處理裝置U1、曝光裝置EX、處理裝置U2後,捲繞於回收用捲筒之例。此處,說明元件製造系統1之處理對象的基板P。 The component manufacturing system 1 is a production line (flexible display manufacturing line) that manufactures flexible displays as components. Flexible displays, such as organic EL displays. This component manufacturing system 1 is to roll out a flexible long substrate P into a cylinder (not shown) for supply rolls, and after the substrate P is continuously subjected to various processes, The so-called roll-to-roll (Ro11 to Ro11) method in which the processed substrate P is wound as a flexible element on a recycling roll (not shown). In the element manufacturing system 1 of the first embodiment, a film-like sheet substrate P is sent out from a supply roll, and the substrate P sent out from the supply roll is sequentially processed through a processing device U1, an exposure device EX, and a processing device U2. After that, it is wound around a reel for recycling. Here, the substrate P to be processed by the component manufacturing system 1 will be described.

基板P,係由例如樹脂薄膜、不鏽鋼等之金屬或合金構成之箔(foil)等。樹脂薄膜之材質,可使用包含例如聚乙烯樹脂、聚丙烯樹脂、聚酯樹脂、乙烯乙烯基共聚物樹脂、聚氯乙烯樹脂、纖維素樹脂、聚醯胺樹脂、聚醯亞胺樹脂、聚碳酸酯樹脂、聚苯乙烯樹脂、聚乙烯醇樹脂等材料中之一種或二種以上者。 The substrate P is a foil made of a metal or an alloy such as a resin film and stainless steel. For the material of the resin film, for example, polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, and polycarbonate can be used. One or two or more kinds of materials such as ester resin, polystyrene resin, and polyvinyl alcohol resin.

基板P,以選擇例如熱膨脹係數顯著不大、可實質忽視在對基板P實施之各種處理中因受熱而產生之變形量者較佳。熱膨脹係數,可藉由例如將無機填充物混合於樹脂薄膜據以設定為較對應處理温度等之閾值小。無機填充物,可以是例如氧化鈦、氧化鋅、氧化鋁、氧化矽等。又, 基板P可以是以浮製法等製造之厚度100μm程度之極薄玻璃之單層體、或於此極薄玻璃貼合上述樹脂薄膜、或箔等的積層體。 The substrate P is preferably selected such that, for example, the coefficient of thermal expansion is significantly small, and the amount of deformation caused by heat in various processes performed on the substrate P can be substantially ignored. The thermal expansion coefficient can be set to be smaller than a threshold value corresponding to a processing temperature or the like by, for example, mixing an inorganic filler with a resin film. Examples of the inorganic filler include titanium oxide, zinc oxide, aluminum oxide, and silicon oxide. also, The substrate P may be a single-layered body of ultra-thin glass having a thickness of about 100 μm produced by a float method or the like, or a laminated body in which the above-mentioned resin film, foil, or the like is bonded to the extremely thin glass.

以此方式構成之基板P,被捲繞成捲筒狀而成為供應用捲筒,此供應用捲筒被裝著於元件製造系統1。裝有供應用捲筒之元件製造系統1,對從供應用捲筒往長條方向送出之基板P反覆實行用以製造元件之各種處理。因此,於處理後之基板P上,於長條方向以一定間隔連接之狀態形成有複數個電子元件(顯示面板、印刷基板等)用之圖案。也就是說,從供應用捲筒送出之基板P,為多面用之基板。此外,基板P亦可以是預先藉由既定前處理,將其表面予以改質而活性化者、或於表面形成用以精密圖案化之微細間隔壁構造(以壓印(imprint)法形成之凹凸構造)者。 The substrate P configured in this manner is wound into a roll shape to become a supply roll, and this supply roll is mounted on the component manufacturing system 1. The component manufacturing system 1 equipped with the supply rolls repeatedly executes various processes for manufacturing the components on the substrate P sent out from the supply rolls in a long direction. Therefore, a pattern for a plurality of electronic components (display panel, printed substrate, etc.) is formed on the processed substrate P in a state of being connected at a certain interval in the longitudinal direction. That is, the substrate P sent out from the supply roll is a multi-sided substrate. In addition, the substrate P may be a surface modified and activated by a predetermined pretreatment in advance, or a fine partition wall structure (an unevenness formed by an imprint method) for precise patterning may be formed on the surface. Constructor).

經處理後之基板P,被捲繞成捲筒狀作為回收用捲筒加以回收。回收用捲筒,被安裝於未圖示之切割裝置。裝有回收用捲筒之切割裝置,將處理後之基板P分割(切割)成各個元件,據以成為複數個元件。基板P之尺寸,例如,寬度方向(短邊之方向)之尺寸為10cm~2m程度、而長度方向(長條之方向)尺寸則為10m以上。當然,基板P之尺寸不限於上述尺寸 The processed substrate P is wound into a roll shape and recovered as a roll for collection. The recovery roll is mounted on a cutting device (not shown). A cutting device equipped with a reel for roll-up is used to divide (cut) the processed substrate P into individual components, thereby becoming a plurality of components. The size of the substrate P is, for example, about 10 cm to 2 m in the width direction (direction of the short side), and more than 10 m in the length direction (length direction). Of course, the size of the substrate P is not limited to the above-mentioned size

接著,參照圖1說明元件製造系統1。元件製造系統1具備處理裝置U1、曝光裝置EX、以及處理裝置U2。又,圖1,係X方向、Y方向及Z方向成正交之正交座標系。X方向,係於水平面內從處理裝置U1經曝光裝置EX朝向處理裝置U2之方向。Y方向,係於水平面內與X方向正交之方向,為基板P之寬度方向。Z方向,係X方向與Y方向正交之方向(鉛直方向),XY面,係與設置曝光裝置EX之製造線之設置面E平行。 Next, a component manufacturing system 1 will be described with reference to FIG. 1. The component manufacturing system 1 includes a processing device U1, an exposure device EX, and a processing device U2. FIG. 1 is an orthogonal coordinate system in which the X direction, the Y direction, and the Z direction are orthogonal. The X direction is a direction from the processing device U1 to the processing device U2 through the exposure device EX in a horizontal plane. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is the width direction of the substrate P. The Z direction is a direction (vertical direction) orthogonal to the X direction and the Y direction, and the XY plane is parallel to the installation surface E of the manufacturing line on which the exposure device EX is installed.

處理裝置U1,係對於曝光裝置EX進行曝光處理之基板P進行前製程之處理(前處理)。處理裝置U1,將經前處理之基板P送向曝光裝置EX。此時,被送至曝光裝置EX之基板P,係其表面形成有感光性機能層(光感應層)之基板(感光基板)P。 The processing device U1 is a process (pre-processing) for performing a pre-process on the substrate P subjected to the exposure processing by the exposure apparatus EX. The processing device U1 sends the pre-processed substrate P to the exposure device EX. At this time, the substrate P sent to the exposure device EX is a substrate (photosensitive substrate) P having a photosensitive functional layer (photosensitive layer) formed on its surface.

此處,感光性機能層係作為溶液塗於基板P上,經乾燥而成為層(膜)。典型的感光性機能層,有光阻劑作為顯影處理後無需之材料,在受紫外線照射之部分之親撥液性經改質之感光性矽烷耦合劑(SAM)、或受紫外線照射之部分露出鍍敷還元基之感光性還元材等。作為感光性機能層使用感光性矽烷耦合劑時,由於基板P上被紫外線曝光之圖案部分由撥液性改質為親液性,因此於成為親液性之部分上選擇性塗布導電性墨水(含有銀或銅等導電性奈米粒子之墨水),以形成圖案層。作為感光性機能層使用感光性還元材時,由於會在基板P上被紫外線曝光之圖案部分露出鍍敷還元基,因此,曝光後,立即將基板P浸漬於含鈀離子等之鍍敷液中一定時間,以形成(析出)鈀之圖案層。 Here, the photosensitive functional layer is applied as a solution on the substrate P, and dried to form a layer (film). A typical photosensitive functional layer has a photoresist as a material that is not required after the development process, and the lyophilized modified silane coupling agent (SAM) in the part exposed to ultraviolet light or the part exposed to ultraviolet light is exposed Photosensitive material for plating reduction. When a photosensitive silane coupling agent is used as the photosensitive functional layer, since the portion of the pattern exposed to ultraviolet light on the substrate P is changed from liquid-repellent to lyophilic, a conductive ink is selectively applied to the portion that becomes lyophilic ( Ink containing conductive nano particles such as silver or copper) to form a pattern layer. When a photosensitive material is used as the photosensitive functional layer, the plating portion is exposed on the pattern portion exposed to the ultraviolet rays on the substrate P. Therefore, the substrate P is immediately immersed in a plating solution containing palladium ions or the like after exposure. For a certain period of time, a pattern layer of palladium is formed (precipitated).

曝光裝置EX,對從處理裝置U1供應之基板P描繪例如顯示器面板用之各種電路或各種配線等之圖案。詳情留待後敘,此曝光裝置EX,係將從複數個描繪單元UW1~UW5之各個投射向基板P之光束LB(以下,亦稱描繪光束LB。)之各個掃描於既定掃描方向所得之複數個描繪線LL1~LL5,於基板P曝光出既定圖案。 The exposure apparatus EX draws patterns of various circuits or various wirings for a display panel, for example, on the substrate P supplied from the processing apparatus U1. Details are left to be described later. This exposure device EX is a plurality of light beams LB (hereinafter, also referred to as drawing beams LB) that are projected from each of the plurality of drawing units UW1 to UW5 toward the substrate P in a predetermined scanning direction. The lines LL1 to LL5 are drawn, and a predetermined pattern is exposed on the substrate P.

處理裝置U2承接於曝光裝置EX曝光處理後之基板P,對基板P進行後製程之處理(後處理)。處理裝置U2,在基板P之感光性機能層為光阻劑之情形時,進行在基板P之玻璃轉移温度以下之後烘烤處理、 顯影處理、洗淨處理、乾燥處理等。又,在基板P之感光性機能層為感光性鍍敷還元材之情形時,處理裝置U2則進行無電電鍍處理、洗淨處理、乾燥處理等。此外,在基板P之感光性機能層為感光性矽烷耦合劑之情形時,處理裝置U2係進行對基板P上成為親液性之部分之液狀墨水之選擇性塗布處理、乾燥處理等。經由此種處理裝置U2,於基板P上形成元件之圖案層。 The processing device U2 receives the substrate P exposed by the exposure device EX, and performs post-processing (post-processing) on the substrate P. The processing device U2, when the photosensitive functional layer of the substrate P is a photoresist, performs a baking process after the glass transition temperature of the substrate P is below, Development processing, washing processing, drying processing, and the like. When the photosensitive functional layer of the substrate P is a photosensitive plating material, the processing device U2 performs an electroless plating process, a cleaning process, a drying process, and the like. In addition, when the photosensitive functional layer of the substrate P is a photosensitive silane coupling agent, the processing device U2 performs a selective coating process, a drying process, and the like of the liquid ink on the substrate P that becomes a lyophilic part. Through such a processing device U2, a pattern layer of an element is formed on the substrate P.

<曝光裝置(基板處理裝置)> <Exposure device (substrate processing device)>

接著,參照圖1至圖10,說明曝光裝置EX。圖2係顯示圖1之曝光裝置主要部之配置的立體圖。圖3係顯示在基板上之對準顯微鏡與描繪線之配置關係的圖。圖4係顯示圖1之曝光裝置之旋轉圓筒及描繪裝置(描繪單元)之構成的圖。圖5係顯示圖1之曝光裝置主要部之配置的俯視圖。圖6係顯示圖1之曝光裝置之分歧光學系之構成的立體圖。圖7係顯示圖1之曝光裝置之複數個描繪單元內之掃描器之配置關係的圖。圖8係說明用以消除因掃描器反射面之傾斜造成之描繪線偏移之光學構成的圖。圖9係顯示在基板上之對準顯微鏡與描繪線之編碼器讀頭之配置關係的立體圖。圖10係顯示圖1之曝光裝置之旋轉圓筒表面構造之一例的立體圖。 Next, an exposure apparatus EX will be described with reference to FIGS. 1 to 10. FIG. 2 is a perspective view showing a configuration of a main part of the exposure apparatus of FIG. 1. FIG. FIG. 3 is a diagram showing an arrangement relationship between an alignment microscope and a drawing line on a substrate. FIG. 4 is a diagram showing the configuration of a rotating cylinder and a drawing device (drawing unit) of the exposure device of FIG. 1. FIG. FIG. 5 is a plan view showing a configuration of a main part of the exposure apparatus of FIG. 1. FIG. FIG. 6 is a perspective view showing a configuration of a branch optical system of the exposure apparatus of FIG. 1. FIG. 7 is a diagram showing the arrangement relationship of the scanners in the plurality of drawing units of the exposure apparatus of FIG. 1. FIG. FIG. 8 is a diagram illustrating an optical configuration for eliminating a shift in a drawing line caused by a tilt of a reflecting surface of a scanner. FIG. 9 is a perspective view showing an arrangement relationship between an alignment microscope on a substrate and an encoder reading head that draws a line. FIG. 10 is a perspective view showing an example of a surface structure of a rotating cylinder of the exposure apparatus of FIG. 1. FIG.

如圖1所示,曝光裝置EX,係不使用光罩之曝光裝置、所謂的無光罩方式的描繪曝光裝置,於本實施形態,係藉由將基板P一邊以一定速度連續往搬送方向(長條方向)搬送、一邊將描繪光束LB之點(spot)光於既定掃描方向(基板P之寬度方向)高速掃描,據以進行於基板P表面之描繪,於基板P上形成既定圖案之逐線(raster scan)方式的直接描繪曝光裝置。 As shown in FIG. 1, the exposure device EX is an exposure device that does not use a mask, a so-called maskless drawing exposure device. In this embodiment, the substrate P is continuously moved to the conveying direction at a constant speed ( (Strip direction), while scanning the spot of the drawing beam LB at a high speed in a predetermined scanning direction (width direction of the substrate P), and performing drawing on the surface of the substrate P to form a predetermined pattern on the substrate P. Line (raster scan) direct drawing exposure device.

如圖1所示,曝光裝置EX具備描繪裝置11、基板搬送機構 12、對準顯微鏡AM1、AM2、以及控制部16。描繪裝置11具備複數個描繪單元UW1~UW5。描繪裝置11,在被作為基板搬送機構12一部分之圓筒狀旋轉圓筒DR之外周面上方緊貼支承之狀態下搬送之基板P之一部分,藉由複數個描繪單元UW1~UW5描繪既定圖案。基板搬送機構12,將從前製程之處理裝置U1搬送而來之基板P,以既定速度往後製程之處理裝置U2搬送。對準顯微鏡AM1、AM2,為進行待描繪於基板P上之圖案與基板P之相對的位置對準,檢測預先形成在基板P之對準標記等。包含電腦、微電腦、CPU、FPGA等之控制部16,控制曝光裝置EX之各部,使各部實施處理。控制部16可以是控制元件製造系統1之上位控制裝置之一部分或全部。又,控制部16受上位控制裝置控制。上位控制裝置,可以是例如管理生產線之主電腦等之其他裝置。 As shown in FIG. 1, the exposure device EX includes a drawing device 11 and a substrate transfer mechanism. 12. Align the microscopes AM1, AM2, and control unit 16. The drawing device 11 includes a plurality of drawing units UW1 to UW5. The drawing device 11 draws a predetermined pattern by a plurality of drawing units UW1 to UW5 while a part of the substrate P is conveyed while being supported closely above the outer peripheral surface of the cylindrical rotating cylinder DR as a part of the substrate conveying mechanism 12. The substrate transfer mechanism 12 transfers the substrate P transferred from the processing device U1 of the previous process to the processing device U2 of the subsequent process at a predetermined speed. The alignment microscopes AM1 and AM2 are used for aligning the relative positions of the pattern to be drawn on the substrate P and the substrate P, and detecting alignment marks and the like formed on the substrate P in advance. A control unit 16 including a computer, a microcomputer, a CPU, an FPGA, and the like controls each unit of the exposure apparatus EX so that each unit performs processing. The control unit 16 may be a part or the whole of a higher-level control device of the control element manufacturing system 1. The control unit 16 is controlled by a higher-level control device. The higher-level control device may be another device such as a host computer that manages the production line.

又,如圖2所示,曝光裝置EX具備支承描繪裝置11及基板搬送機構12之至少一部(旋轉圓筒DR等)之裝置框架13,於該裝置框架13安裝有檢測旋轉圓筒DR之旋轉角度位置及旋轉速度、旋轉軸方向之變位等的旋轉光束點光SP位置檢測機構(圖4及圖9所示之編碼器讀頭等)、與圖1(或圖3、圖9)所示之對準顯微鏡AM1、AM2等。再者,於曝光裝置EX內,如圖4、圖5所示的設有射出作為描繪光束LB之紫外雷射光(脈衝光)的光源裝置CNT。此曝光裝置EX,將從光源裝置CNT射出之描繪光束LB,以大致均等光量(照度)分配至構成描繪裝置11之複數個描繪單元UW1~UW5之各個。 As shown in FIG. 2, the exposure device EX includes an apparatus frame 13 that supports at least a part of the drawing device 11 and the substrate transfer mechanism 12 (rotating cylinder DR, etc.). Rotary beam spot light SP position detection mechanism (such as the encoder reading head shown in Fig. 4 and Fig. 9) such as the rotation angle position, rotation speed, and displacement of the rotation axis direction, and Fig. 1 (or Fig. 3 and Fig. 9) The alignment microscopes AM1, AM2, etc. are shown. Furthermore, as shown in FIGS. 4 and 5, an exposure device EX is provided with a light source device CNT that emits ultraviolet laser light (pulse light) as a drawing light beam LB. This exposure device EX distributes the drawing light beam LB emitted from the light source device CNT to each of a plurality of drawing units UW1 to UW5 constituting the drawing device 11 at substantially equal light amounts (illumination).

如圖1所示,曝光裝置EX係收納在調溫室EVC內。調溫室EVC,透過被動或主動的防振單元SU1、SU2設置在製造工場之設置面 (地面)E。防振單元SU1、SU2設在設置面E上,用以降低來自設置面E之振動。調溫室EVC,藉由將內部保持於既定温度,據以抑制在內部搬送之基板P因温度造成之形狀變化。 As shown in FIG. 1, the exposure device EX is housed in a greenhouse EVC. Adjust the greenhouse EVC and install it on the installation surface of the manufacturing plant through passive or active vibration isolation units SU1 and SU2 (Ground) E. The anti-vibration units SU1 and SU2 are provided on the installation surface E to reduce vibration from the installation surface E. The greenhouse EVC is adjusted to keep the interior at a predetermined temperature, thereby suppressing a change in the shape of the substrate P that is transported in the interior due to temperature.

曝光裝置EX之基板搬送機構12,從基板P之搬送方向上游側起依序具有邊緣位置控制器EPC、驅動滾輪DR4、張力調整滾輪RT1、旋轉圓筒(圓筒圓筒)DR、張力調整滾輪RT2、驅動滾輪DR6、及驅動滾輪DR7。 The substrate conveying mechanism 12 of the exposure device EX has an edge position controller EPC, a driving roller DR4, a tension adjusting roller RT1, a rotating cylinder (cylindrical cylinder) DR, and a tension adjusting roller in order from the upstream side of the substrate P in the conveying direction. RT2, driving roller DR6, and driving roller DR7.

邊緣位置控制器EPC係調整從處理裝置U1搬送之基板P於寬度方向(Y方向)之位置。邊緣位置控制器EPC,以從處理裝置U1送來之基板P之寬度方向端部(邊緣)位置,能相對目標位置在±十數μm~數十μm程度之範圍內,而使基板P於寬度方向微動,修正基板P於寬度方向之位置。 The edge position controller EPC adjusts the position of the substrate P transferred from the processing device U1 in the width direction (Y direction). The edge position controller EPC can position the substrate P in the width direction at the end (edge) of the substrate P sent from the processing device U1 within a range of ± ten μm to several tens μm relative to the target position. The direction moves slightly to correct the position of the substrate P in the width direction.

夾持方式之驅動滾輪DR4,一邊夾持從邊緣位置控制器EPC搬送而來之基板P之正反兩面一邊旋轉,將基板P送向搬送方向之下游側,以將基板P往旋轉圓筒DR搬送。旋轉圓筒DR,一邊使基板P上之圖案待曝光之部分緊貼於從延伸於Y方向之旋轉中心線(旋轉軸)AX2具一定半徑之圓筒狀外周面以加以支承、一邊繞旋轉中心線AX2旋轉,據以將基板P往長條方向搬送。 The driving roller DR4 of the clamping method rotates the front and back sides of the substrate P transferred from the edge position controller EPC while holding the substrate P to the downstream side of the conveying direction to move the substrate P to the rotating cylinder DR. Transport. Rotate the cylinder DR while supporting the portion of the pattern on the substrate P that is to be exposed on the cylindrical outer peripheral surface with a certain radius from the rotation centerline (rotation axis) AX2 extending in the Y direction, while supporting the circle. The wire AX2 is rotated to carry the substrate P in a long direction.

為使此種旋轉圓筒DR繞旋轉中心線AX2旋轉,於旋轉圓筒DR之兩側設有與旋轉中心線AX2同軸之軸(shaft)部Sf2,軸部Sf2,如圖2所示,透過軸承被軸支於裝置框架13。於此軸部Sf2,賦予來自未圖示之驅動源(馬達及減速齒輪機構等)之旋轉力矩。又,將包含旋轉中心 線AX2與YZ面平行之面,設為中心面p3。 In order to rotate such a rotating cylinder DR around the rotation centerline AX2, shaft portions Sf2 and shaft portions Sf2 coaxial with the rotation centerline AX2 are provided on both sides of the rotation cylinder DR, as shown in FIG. The bearing is supported by the device frame 13 by a shaft. A rotational torque is applied to a shaft portion Sf2 from a driving source (motor, reduction gear mechanism, etc.) (not shown). Also, will include the center of rotation A plane where the line AX2 is parallel to the YZ plane is referred to as a center plane p3.

2組張力調整滾輪RT1、RT2,對被捲繞支承於旋轉圓筒DR之基板P賦予既定張力。2組夾持式驅動滾輪DR6、DR7於基板P之搬送方向相隔既定間隔配置,對曝光後之基板P賦予既定之鬆弛DL。藉由驅動滾輪DR6夾持搬送之基板P之上游側旋轉、驅動滾輪DR7夾持搬送之基板P之下游側旋轉,據以將基板P搬送向處理裝置U2。此時,基板P由於被賦予有鬆弛DL,因能吸收較驅動滾輪DR6在搬送方向下游側產生之基板P之搬送速度之變動,隔絕因搬送速度之變動對基板P造成之曝光處理之影響。 The two sets of tension adjusting rollers RT1 and RT2 apply a predetermined tension to the substrate P that is wound and supported on the rotating cylinder DR. The two sets of grip driving rollers DR6 and DR7 are arranged at a predetermined interval in the conveying direction of the substrate P, and the substrate P after exposure is given a predetermined slack DL. The upstream side of the substrate P conveyed by the driving roller DR6 is rotated and the downstream side of the substrate P conveyed by the driving roller DR7 is rotated, so that the substrate P is conveyed to the processing device U2. At this time, since the substrate P is provided with the slack DL, it can absorb the variation in the conveyance speed of the substrate P that is generated downstream of the driving roller DR6 in the conveying direction, and isolates the influence of the exposure processing caused by the change in the conveyance speed on the substrate P.

從而,基板搬送機構12,能對從處理裝置U1搬送而來之基板P,藉由邊緣位置控制器EPC調整於寬度方向之位置。基板搬送機構12,將寬度方向之位置經調整之基板P,藉由驅動滾輪DR4搬送至張力調整滾輪RT1,將通過張力調整滾輪RT1之基板P搬送至旋轉圓筒DR。基板搬送機構12,藉由使旋轉圓筒DR旋轉,據以將被支承於旋轉圓筒DR之基板P搬送向張力調整滾輪RT2。基板搬送機構12,將搬送至張力調整滾輪RT2之基板P搬送至驅動滾輪DR6,將搬送至驅動滾輪DR6之基板P搬送至驅動滾輪DR7。接著,基板搬送機構12藉由驅動滾輪DR6及驅動滾輪DR7,一邊對基板P賦予鬆弛DL、一邊將基板P搬送向處理裝置U2。 Therefore, the substrate transfer mechanism 12 can adjust the position of the substrate P transferred from the processing apparatus U1 in the width direction by the edge position controller EPC. The substrate transfer mechanism 12 transfers the substrate P whose width position is adjusted to the tension adjusting roller RT1 by the driving roller DR4, and transfers the substrate P passing the tension adjusting roller RT1 to the rotating cylinder DR. The substrate transfer mechanism 12 transfers the substrate P supported by the rotation cylinder DR to the tension adjustment roller RT2 by rotating the rotation cylinder DR. The substrate transfer mechanism 12 transfers the substrate P transferred to the tension adjusting roller RT2 to the driving roller DR6, and transfers the substrate P transferred to the driving roller DR6 to the driving roller DR7. Next, the substrate transfer mechanism 12 transfers the substrate P to the processing device U2 while applying the slack DL to the substrate P by the driving roller DR6 and the driving roller DR7.

再次參照圖2,說明曝光裝置EX之裝置框架13。圖2中,X方向、Y方向及Z方向為一正交之正交座標系,係與圖1相同之正交座標系。 Referring again to FIG. 2, the device frame 13 of the exposure device EX will be described. In FIG. 2, the X direction, the Y direction, and the Z direction are orthogonal orthogonal coordinate systems, which are the same orthogonal coordinate systems as those in FIG. 1.

如圖2所示,裝置框架13,從Z方向之下方側依序具有本 體框架21、支承機構三點座22、第1光學平台23、移動機構24、以及第2光學平台25。本體框架21係透過防振單元SU1、SU2設置在設置面E上之部分。本體框架21,將旋轉圓筒DR及張力調整滾輪RT1(未圖示)、RT2軸支(支承)成可旋轉。第1光學平台23,設在旋轉圓筒DR之鉛直方向上方側,透過三點座22設置於本體框架21。三點座22,將第1光學平台23以3個支承點加以支承,於各支承點之Z方向位置(高度位置)可調整。因此,三點座22可將第1光學平台23之平台面相對水平面之傾斜調整為既定傾斜。又,於裝置框架13之組裝時,本體框架21與三點座22之間,可在XY面內,於X方向及Y方向進行位置調整。另一方面,於裝置框架13之組裝後,本體框架21與三點座22之間則成為在XY面內被固定之狀態(剛性狀態)。 As shown in FIG. 2, the device frame 13 has The body frame 21, the support mechanism three-point mount 22, the first optical platform 23, the moving mechanism 24, and the second optical platform 25. The main body frame 21 is a portion provided on the installation surface E through the vibration isolation units SU1 and SU2. The main body frame 21 is rotatably supported (supported) by a rotating cylinder DR, a tension adjusting roller RT1 (not shown), and an RT2. The first optical stage 23 is provided on the vertical upper side of the rotating cylinder DR, and is provided on the main body frame 21 through the three-point mount 22. The three-point mount 22 supports the first optical platform 23 at three support points, and the Z-direction position (height position) of each support point can be adjusted. Therefore, the three-point mount 22 can adjust the tilt of the platform surface of the first optical platform 23 with respect to the horizontal plane to a predetermined tilt. When assembling the device frame 13, the position between the main body frame 21 and the three-point seat 22 can be adjusted in the X direction and the Y direction in the XY plane. On the other hand, after the device frame 13 is assembled, the body frame 21 and the three-point seat 22 are fixed in the XY plane (rigid state).

第2光學平台25設在第1光學平台23之鉛直方向上方側,透過移動機構24設置於第1光學平台23。第2光學平台25,其平台面與第1光學平台23之平台面平行。於第2光學平台25,設有描繪裝置11之複數個描繪單元UW1~UW5。移動機構24,可在將第1光學平台23及第2光學平台25各個之平台面保持成平行之狀態下,以延伸於鉛直方向之既定旋轉軸I為中心,相對第1光學平台23使第2光學平台25精密的微幅旋轉。其旋轉範圍,例如係相對基準位置在±數百毫弧度程度,能以1~數毫弧度之分解能力進行角度設定之構造。又,移動機構24,亦具備可在將第1光學平台23及第2光學平台25各個之平台面保持於平行之狀態下,相對第1光學平台23使第2光學平台25於X方向及Y方向之至少一方精密的微幅移動的機構,可使旋轉軸I從基準位置往X方向或Y方向以μm級之分解 能力微幅變位。此旋轉軸I,於基準位置,係於中心面p3內延伸於鉛直方向且通過捲繞在旋轉圓筒DR之基板P表面(順著圓周面彎曲之描繪面)內之既定點(基板P之寬度方向中點)(參照圖3)。藉由此種移動機構24,相對第1光學平台23使第2光學平台25旋轉或移動,即能一體的調整複數個描繪單元UW1~UW5相對旋轉圓筒DR、或被捲繞於旋轉圓筒DR之基板P之位置。 The second optical stage 25 is provided on the upper side in the vertical direction of the first optical stage 23, and is provided on the first optical stage 23 through the moving mechanism 24. The platform surface of the second optical platform 25 is parallel to the platform surface of the first optical platform 23. On the second optical stage 25, a plurality of drawing units UW1 to UW5 of the drawing device 11 are provided. The moving mechanism 24 can maintain the platform surfaces of each of the first optical platform 23 and the second optical platform 25 in parallel, and center the predetermined rotation axis I extending in the vertical direction as the center, and position the first optical platform 23 relative to the first optical platform 23. 2Optical stage 25 precision micro-rotation. The rotation range is, for example, a structure that can set the angle with a resolution of 1 to several milliradians relative to the reference position within a range of ± hundreds of milliradians. In addition, the moving mechanism 24 is also capable of maintaining the second optical table 25 in the X direction and the Y direction with respect to the first optical table 23 while maintaining the flat surfaces of each of the first optical table 23 and the second optical table 25 in parallel. At least one of the directions can move the rotation axis I from the reference position to the X direction or the Y direction with a resolution of μm. Ability to slightly shift. This rotation axis I, at the reference position, is a predetermined point (the surface of the substrate P) that extends in the vertical direction in the center plane p3 and is wound around the surface of the substrate P (the drawing surface curved along the circumferential surface) of the rotating cylinder DR. Midpoint in the width direction) (see Fig. 3). By such a moving mechanism 24, the second optical table 25 can be rotated or moved relative to the first optical table 23, that is, the plurality of drawing units UW1 to UW5 can be adjusted integrally with respect to the rotating cylinder DR or wound around the rotating cylinder. Position of substrate P of DR.

接著,參照圖5說明光源裝置CNT。光源裝置CNT設置在裝置框架13之本體框架21上。光源裝置CNT射出投射於基板P之作為描繪光束LB之雷射光。光源裝置CNT,具有射出適於基板P上之感光性機能層之曝光之既定波長帶域、光活性作用強之紫外帶之光的光源。作為光源,可利用例如連續振盪、或以數KHz~數百MHz程度脈衝振盪出YAG之第三高次諧波雷射光(波長355nm)的雷射光源。 Next, the light source device CNT will be described with reference to FIG. 5. The light source device CNT is provided on the main body frame 21 of the device frame 13. The light source device CNT emits laser light that is projected on the substrate P as a drawing light beam LB. The light source device CNT has a light source that emits light in a predetermined wavelength band suitable for the exposure of the photosensitive functional layer on the substrate P and in the ultraviolet band with strong photoactivity. As the light source, for example, a laser light source that continuously oscillates or oscillates the third-order harmonic laser light (wavelength 355 nm) of YAG with pulses of several KHz to hundreds of MHz can be used.

光源裝置CNT具備雷射光產生部CU1及波長轉換部CU2。雷射光產生部CU1具備雷射光源OSC、以及光纖增幅器FB1、FB2。雷射光產生部CU1射出基本波雷射光Ls。光纖增幅器FB1、FB2將基本波雷射光Ls以光纖加以増幅。雷射光產生部CU1使増幅之基本波雷射光Lr射入波長轉換部CU2。於波長轉換部CU2設有波長轉換光學元件、分光鏡及偏光分束器、稜鏡等,藉由此等光(波長)選擇零件之使用取出第三高次諧波雷射波長355nm之雷射光(描繪光束LB)。此時,使發出種光之雷射光源OSC與系統時脈等同步進行脈衝點燈,光源裝置CNT即作為數KHz~數百MHz程度之脈衝光發出波長355nm之描繪光束LB。又,使用此種光纖增幅器之情形時,依據雷射光源OSC之脈衝驅動之態樣,可將最終輸出之雷射光(Lr 及LB)之1脈衝發光時間控制成微微秒級。 The light source device CNT includes a laser light generation unit CU1 and a wavelength conversion unit CU2. The laser light generating unit CU1 includes a laser light source OSC and fiber amplifiers FB1 and FB2. The laser light generating unit CU1 emits a fundamental wave laser light Ls. The fiber amplifiers FB1 and FB2 amplify the fundamental wave laser light Ls with an optical fiber. The laser light generating unit CU1 causes the fundamental laser light Lr of a large amplitude to enter the wavelength conversion unit CU2. The wavelength conversion unit CU2 is provided with a wavelength conversion optical element, a beam splitter, a polarizing beam splitter, a chirp, and the like, and by using the light (wavelength) selection part, the third high-harmonic laser wavelength 355 nm laser light is taken out. (Draw beam LB). At this time, the laser light source OSC that emits various kinds of light is pulsed in synchronization with the system clock and the like, and the light source device CNT emits a drawing beam LB with a wavelength of 355 nm as pulse light having a frequency of several KHz to hundreds of MHz. In addition, in the case of using such an optical fiber amplifier, according to the pulse driving state of the laser light source OSC, the final output laser light (Lr And LB), one pulse emission time is controlled to picosecond order.

又,作為光源,亦可利用例如具有紫外帶之輝線(g線、h線、i線等)之水銀燈等之燈光源、於波長450nm以下之紫外帶具有振盪峰值之雷射二極體、發光二極體(LED)等之固體光源、或發出遠紫外光(DUV光)之KrF準分子雷射光(波長248nm)、ArF準分子雷射光(波長193nm)、XeC1準分子雷射(波長308nm)等之氣體雷射光源。 In addition, as the light source, for example, a lamp light source such as a mercury lamp having a glow line (g-line, h-line, i-line, etc.) in the ultraviolet band, a laser diode having an oscillation peak in the ultraviolet band below 450 nm, and light emission can also be used. Solid-state light source such as a diode (LED), or KrF excimer laser (wavelength 248nm), ArF excimer laser (wavelength 193nm), XeC1 excimer laser (wavelength 308nm) that emits far ultraviolet light (DUV light) And other gas laser light sources.

此處,從光源裝置CNT射出之描繪光束LB,如後述般,透過各描繪單元UW1~UW5內所設之偏光分束器PBS投射於基板P。一般而言,偏光分束器PBS會反射為S偏光之直線偏光的光束,而使為P偏光之直線偏光的光束穿透。因此,於光源裝置CNT,以射入偏光分束器PBS之描繪光束LB為射出直線偏光(S偏光)之光束的雷射光較佳。此外,由於雷射光之能量密度高,因此能適當的確保投射於基板P之光束之照度。 Here, the drawing light beam LB emitted from the light source device CNT is projected onto the substrate P through a polarizing beam splitter PBS provided in each of the drawing units UW1 to UW5 as described later. Generally speaking, the polarizing beam splitter PBS reflects a linearly polarized light beam that is S polarized light, and transmits a linearly polarized light beam that is P polarized light. Therefore, in the light source device CNT, it is preferable that the drawing light beam LB that enters the polarizing beam splitter PBS is a laser light that emits linearly polarized light (S-polarized light). In addition, since the laser light has a high energy density, the illuminance of the light beam projected onto the substrate P can be appropriately ensured.

其次,針對曝光裝置EX之描繪裝置11,亦參照圖3加以說明。描繪裝置11係使用複數個描繪單元UW1~UW5之所謂的多光束型描繪裝置11。此描繪裝置11,將從光源裝置CNT射出之描繪光束LB分歧為複數條,並將分歧之複數個描繪光束LB沿著如圖3之基板P上之複數條(第1實施形態中例如為5條)描繪線LL1~LL5分別聚光為微小之點光(數μm徑)加以掃描。描繪裝置11,將以複數個描繪線LL1~LL5之各個在基板P上描繪之圖案彼此於基板P之寬度方向加以接合。首先,參照圖3,說明以描繪裝置11掃描複數個描繪光束LB據以在基板P上形成之複數條描繪線LL1~LL5(點光之掃描軌跡)。 Next, the drawing device 11 of the exposure device EX will also be described with reference to FIG. 3. The drawing device 11 is a so-called multi-beam type drawing device 11 using a plurality of drawing units UW1 to UW5. This drawing device 11 divides the drawing light beams LB emitted from the light source device CNT into plural pieces, and divides the plural drawing light beams LB along the plural pieces on the substrate P shown in FIG. 3 (for example, 5 in the first embodiment). Bars) LL1 to LL5 are collected and scanned as small spot lights (diameters of several μm). The drawing device 11 joins the patterns drawn on the substrate P by a plurality of drawing lines LL1 to LL5 in the width direction of the substrate P. First, referring to FIG. 3, a description will be given of a plurality of drawing lines LL1 to LL5 (scanning traces of point light) formed on the substrate P by scanning the drawing device LB with the drawing device 11.

如圖3所示,複數條描繪線LL1~LL5,夾著中心面p3於旋 轉圓筒DR之周方向配置成2行。於旋轉方向上游側之基板P上,與Y軸平行的配置奇數號之第1描繪線LL1、第3描繪線LL3及第5描繪線LL5於旋轉方向下游側之基板P上,與Y軸平行的配置偶數號之第2描繪線LL2及第4描繪線LL4。 As shown in FIG. 3, a plurality of lines LL1 to LL5 are drawn, sandwiching the center plane p3 in the rotation The rotating cylinder DR is arranged in two rows in the circumferential direction. An odd-numbered first drawing line LL1, a third drawing line LL3, and a fifth drawing line LL5 are arranged on the substrate P on the upstream side of the rotation direction in parallel to the Y axis, and are parallel to the Y axis on the substrate P on the downstream side of the rotation direction. The second drawing line LL2 and the fourth drawing line LL4 are arranged in even numbers.

各描繪線LL1~LL5於基板P之寬度方向(Y方向)、也就是說沿旋轉圓筒DR之旋轉中心線AX2大致平行形成,較基板P於寬度方向之長度短。嚴謹來說,各描繪線LL1~LL5,為在藉由基板搬送機構12以基準速度搬送基板P時,以複數條描繪線LL1~LL5所得之圖案之接合誤差為最小,可相對旋轉圓筒DR之旋轉中心線AX2延伸之方向(軸方向或寬度方向)傾斜既定角度分。 Each of the drawing lines LL1 to LL5 is formed in the width direction (Y direction) of the substrate P, that is, substantially parallel to the rotation center line AX2 of the rotation cylinder DR, and is shorter than the length of the substrate P in the width direction. Strictly speaking, each of the drawing lines LL1 to LL5 is to minimize the joining error of the pattern obtained by drawing the lines LL1 to LL5 with a plurality of drawing lines LL1 to LL5 when the substrate P is conveyed by the substrate conveying mechanism 12 at a reference speed. The extending direction (axis direction or width direction) of the rotation center line AX2 is inclined by a predetermined angle.

奇數號之第1描繪線LL1、第3描繪線LL3及第5描繪線LL5,於旋轉圓筒DR之中心線AX2方向相距既定間隔配置。又,偶數號之第2描繪線LL2及第4描繪線LL4,於旋轉圓筒DR之中心線AX2方向相距既定間隔配置。,此時,第2描繪線LL2係於中心線AX2方向配置在第1描繪線LL1與第3描繪線LL3之間。同樣的,第3描繪線LL3係於中心線AX2方向配置在第2描繪線LL2與第4描繪線LL4之間。第4描繪線LL4於中心線AX2方向配置在第3描繪線LL3與第5描繪線LL5之間。此外,第1~第5描繪線LL1~LL5係配置成涵蓋描繪於基板P上之曝光區域A7之寬度方向(軸方向)全寬。 The odd-numbered first drawing line LL1, the third drawing line LL3, and the fifth drawing line LL5 are arranged at predetermined intervals in the direction of the center line AX2 of the rotating cylinder DR. The even-numbered second drawing line LL2 and the fourth drawing line LL4 are arranged at predetermined intervals in the direction of the center line AX2 of the rotating cylinder DR. At this time, the second drawing line LL2 is arranged between the first drawing line LL1 and the third drawing line LL3 in the direction of the center line AX2. Similarly, the third drawing line LL3 is arranged between the second drawing line LL2 and the fourth drawing line LL4 in the direction of the center line AX2. The fourth drawing line LL4 is arranged between the third drawing line LL3 and the fifth drawing line LL5 in the direction of the center line AX2. The first to fifth drawing lines LL1 to LL5 are arranged so as to cover the full width in the width direction (axis direction) of the exposure area A7 drawn on the substrate P.

沿著奇數號之第1描繪線LL1、第3描繪線LL3及第5描繪線LL5掃描之描繪光束LB之點光之掃描方向,為一維方向、相同方向。又,沿偶數號之第2描繪線LL2及第4描繪線LL4掃描之描繪光束LB之點光之 掃描方向,為一維方向、相同方向。此時,沿奇數號描繪線LL1、LL3、LL5掃描之描繪光束LB之點光之掃描方向(+Y方向)與沿偶數號描繪線LL2、LL4掃描之描繪光束LB之點光之掃描方向(-Y方向),如圖3中之箭頭所示,為相反方向。此係因使描繪單元UW1~UW5之各個為相同構成,在使奇數號描繪單元與偶數號描繪單元於XY面內旋轉180°對向配置、且使設於各描繪單元UW1~UW5之作為光束掃描器之旋轉多邊形鏡(polygon mirror)旋轉於同一方向之故。因此,從基板P之搬送方向來看,奇數號描繪線LL3、LL5之描繪開始位置與偶數號描繪線LL2、LL4之描繪開始位置,係於Y方向以點光之徑尺寸以下之誤差相鄰接(或一致),同樣的,奇數號描繪線LL1、LL3之描繪結束位置與偶數號描繪線LL2、LL4之描繪結束位置,係於Y方向以點光之徑尺寸以下之誤差相鄰接(或一致)。 The scanning direction of the spot light of the drawing light beam LB scanned along the odd-numbered first drawing line LL1, the third drawing line LL3, and the fifth drawing line LL5 is a one-dimensional direction and the same direction. In addition, the point light of the drawing light beam LB scanned along the even-numbered second drawing line LL2 and the fourth drawing line LL4 The scanning direction is a one-dimensional direction and the same direction. At this time, the scanning direction (+ Y direction) of the point light of the drawing beam LB scanned along the odd-numbered drawing lines LL1, LL3, and LL5 and the scanning direction of the point light of the drawing beam LB scanned along the even-numbered drawing lines LL2, LL4 ( -Y direction), as shown by the arrow in FIG. 3, is the opposite direction. This is because each of the drawing units UW1 to UW5 has the same configuration. The odd-numbered drawing units and the even-numbered drawing units are rotated 180 ° in the XY plane to face each other, and the light beams provided in each of the drawing units UW1 to UW5 are used as light beams. The scanner's rotating polygon mirror rotates in the same direction. Therefore, from the conveying direction of the substrate P, the drawing start positions of the odd-numbered drawing lines LL3 and LL5 and the drawing start positions of the even-numbered drawing lines LL2 and LL4 are adjacent to each other in the Y direction with an error below the diameter of the spot light. In the same way, the drawing end positions of the odd-numbered drawing lines LL1 and LL3 and the drawing end positions of the even-numbered drawing lines LL2 and LL4 are adjacent to each other in the Y direction with an error below the diameter of the point light Or consistent).

如以上之說明,奇數號描繪線LL1、LL3、LL5之各個係在基板P上與旋轉圓筒DR之旋轉中心線AX2大致平行之方式,於基板P之寬度方向配置成一行。而偶數號描繪線LL2、LL4之各個係在基板P上與旋轉圓筒DR之旋轉中心線AX2大致平行之方式,於基板P之寬度方向配置成一行。 As described above, each of the odd-numbered drawing lines LL1, LL3, and LL5 is arranged on the substrate P so as to be substantially parallel to the rotation center line AX2 of the rotating cylinder DR, and is arranged in a line in the width direction of the substrate P. Each of the even-numbered drawing lines LL2 and LL4 is arranged on the substrate P so as to be substantially parallel to the rotation center line AX2 of the rotating cylinder DR, and is arranged in a line in the width direction of the substrate P.

其次,參照圖4至圖7說明描繪裝置11。描繪裝置11,具有上述複數個描繪單元UW1~UW5、將來自光源裝置CNT之描繪光束LB分歧後導向描繪單元UW1~UW5之分歧光學系SL、以及用以進行校準之校準檢測系31。 Next, the drawing device 11 will be described with reference to FIGS. 4 to 7. The drawing device 11 includes the plurality of drawing units UW1 to UW5 described above, a branching optical system SL that diverges the drawing light beam LB from the light source device CNT to the drawing units UW1 to UW5, and a calibration detection system 31 for performing calibration.

分歧光學系SL將從光源裝置CNT射出之描繪光束LB分歧為複數條,並將分歧之複數條描繪光束LB分別導向複數個描繪單元UW1 ~UW5。分歧光學系SL,具有將從光源裝置CNT射出之描繪光束LB分歧為2條之第1光學系41、以第1光學系41分歧之一描繪光束LB射入之第2光學系42、及以第1光學系41分歧之另一描繪光束LB射入之第3光學系43。又,於分歧光學系SL之第1光學系41中設有在與描繪光束LB之進行軸正交之面內使描繪光束LB2維橫移之光束位移機構44,於分歧光學系SL之第3光學系43中設有使描繪光束LB2維橫移之光束位移機構45。分歧光學系SL,其光源裝置CNT側之一部分設置於本體框架21,另一方面,描繪單元UW1~UW5側之另一部分則設置於第2光學平台25。 The divergent optical system SL diverges the plural drawing beams LB emitted from the light source device CNT into a plurality of pieces, and directs the plural plural drawing beams LB to the plural drawing units UW1. ~ UW5. The divergent optical system SL includes a first optical system 41 that splits the drawing light beam LB emitted from the light source device CNT into two, a second optical system 42 that draws the light beam LB into one of the divergences of the first optical system 41, and The third optical system 43 into which the first optical system 41 diverges and another drawing beam LB enters. Further, the first optical system 41 of the branched optical system SL is provided with a beam displacement mechanism 44 for horizontally moving the drawing beam LB in a plane orthogonal to the progress axis of the drawing optical beam LB, and the third optical system SL of the branched optical system SL is provided. The optical system 43 is provided with a beam displacement mechanism 45 for horizontally moving the drawing beam LB2 in two dimensions. In the branch optical system SL, one part of the light source device CNT side is provided on the main body frame 21, and the other part of the drawing unit UW1 to UW5 side is provided on the second optical platform 25.

第1光學系41,具有1/2波長板51、偏光鏡(偏光分束器)52、散光器(beam diffuser)53、第1反射鏡54、第1中繼透鏡55、第2中繼透鏡56、光束位移機構44、第2反射鏡57、第3反射鏡58、第4反射鏡59、以及第1分束器60。又,從圖4、圖5中不易理解各構件之配置關係,因此,亦參照圖6之立體圖加以說明。 The first optical system 41 includes a 1/2 wavelength plate 51, a polarizer (polarizing beam splitter) 52, a beam diffuser 53, a first reflecting mirror 54, a first relay lens 55, and a second relay lens. 56. A beam displacement mechanism 44, a second reflecting mirror 57, a third reflecting mirror 58, a fourth reflecting mirror 59, and a first beam splitter 60. In addition, since it is difficult to understand the arrangement relationship of each component from FIG. 4 and FIG. 5, the description is also made with reference to the perspective view of FIG. 6.

如圖6所示,從光源裝置CNT往+X方向射出之描繪光束LB射入1/2波長板51。1/2波長板51在描繪光束LB之入射面內可旋轉。射入1/2波長板51之描繪光束LB,其偏光方向為對應1/2波長板51之旋轉位置(角度)的既定偏光方向。通過1/2波長板51之描繪光束LB射入偏光鏡52。偏光鏡52使描繪光束LB中所含之既定偏光方向之光成分穿透,另一方面則將之外之偏光方向之光成分反射向+Y方向。因此,以偏光鏡52反射之描繪光束LB之強度,可藉由1/2波長板51及偏光鏡52之協力動作,視1/2波長板51之旋轉位置加以調整。 As shown in FIG. 6, the drawing light beam LB emitted from the light source device CNT in the + X direction enters the 1/2 wavelength plate 51. The 1/2 wavelength plate 51 is rotatable within the incident surface of the drawing light beam LB. The polarization direction of the depicted light beam LB incident on the 1/2 wavelength plate 51 is a predetermined polarization direction corresponding to the rotation position (angle) of the 1/2 wavelength plate 51. The light beam LB passing through the 1/2 wavelength plate 51 is incident on the polarizer 52. The polarizing mirror 52 transmits light components of a predetermined polarization direction contained in the drawing light beam LB, and reflects light components in other polarization directions to the + Y direction. Therefore, the intensity of the depicted light beam LB reflected by the polarizer 52 can be adjusted by the rotation of the 1/2 wavelength plate 51 through the cooperative action of the 1/2 wavelength plate 51 and the polarizer 52.

穿透過偏光鏡52之描繪光束LB之一部分(不要的光成分) 照射於散光器(捕光)53。散光器53吸收射入之描繪光束LB之部分光成分,以抑制該光成分漏至外部。進一步的,亦用在進行描繪光束LB通過之各種光學系之調整作業時,由於雷射功率在最大狀態下功率過強而有危險,為使散光器53能吸收描繪光束LB之較多光成分,而改變1/2波長板51之旋轉位置(角度),以使朝向描繪單元UW1~UW5之描繪光束LB之功率大幅衰減。 Part of the drawing beam LB passing through the polarizer 52 (unwanted light component) The light is irradiated to a diffuser (light capture) 53. The diffuser 53 absorbs a part of the light component of the incident light beam LB to suppress the light component from leaking to the outside. Further, it is also used in the adjustment of various optical systems through which the drawing beam LB passes. Because the laser power is too strong at the maximum state, it is dangerous. In order to make the diffuser 53 absorb more light components of the drawing beam LB, While changing the rotation position (angle) of the 1/2 wavelength plate 51 so that the power of the drawing beam LB toward the drawing units UW1 to UW5 is greatly attenuated.

被偏光鏡52反射向+Y方向之描繪光束LB,因第1反射鏡54而反射向+X方向,透過第1中繼透鏡55及第2中繼透鏡56射入光束位移機構44,到達第2反射鏡57。 The drawing beam LB reflected in the + Y direction by the polarizer 52 is reflected in the + X direction by the first mirror 54 and passes through the first relay lens 55 and the second relay lens 56 and enters the beam displacement mechanism 44 to reach the first 2Mirror 57.

第1中繼透鏡55使來自光源裝置CNT之描繪光束LB(大致平行之光束)收斂形成光束腰,第2中繼透鏡56使收斂後發散之描繪光束LB再次成為平行光束。 The first relay lens 55 converges the drawing light beam LB (substantially parallel light beam) from the light source device CNT to form a beam waist, and the second relay lens 56 causes the converged drawing light beam LB to become a parallel light beam again.

光束位移機構44,如圖6所示,包含沿描繪光束LB之行進方向(+X方向)配置之2片平行平面板(石英),該平行平面板之一設置成能繞與Y軸平行之軸傾斜,另一平行平面板則設置成稜繞與Z軸平行之軸傾斜。依據各平行平面板之傾斜角度,描繪光束LB於ZY面內橫移而從光束位移機構44射出。 The beam displacement mechanism 44 includes, as shown in FIG. 6, two parallel plane plates (quartz) arranged along the traveling direction (+ X direction) of the beam LB. One of the parallel plane plates is arranged to be able to run parallel to the Y axis. The axis is inclined, and the other parallel plane plate is arranged so that the edge is inclined about an axis parallel to the Z axis. According to the inclination angle of each parallel plane plate, the light beam LB is laterally moved in the ZY plane and is emitted from the beam displacement mechanism 44.

之後,描繪光束LB被第2反射鏡57反射向-Y方向,到達第3反射鏡58,再被第3反射鏡58反射向-Z方向而到達第4反射鏡59。藉由第4反射鏡59,描繪光束LB被反射向+Y方向而射入第1分束器60。第1分束器60將描繪光束LB之部分光量成分反射向-X方向以導向第2光學系42,並將描繪光束LB之其餘光量成分導向第3光學系43。本實施 形態中,被導向第2光學系42之描繪光束LB在之後被分配於3個描繪單元UW1、UW3、UW5,被導向第3光學系43之描繪光束LB在之後被分配於2個描繪單元UW2、UW4。因此,第1分束器60在光分割面之反射率與穿透率之比以3:2(反射率60%、穿透率40%)較佳,但不一定非如此不可,亦可以是1:1。 Thereafter, the drawing beam LB is reflected by the second mirror 57 in the -Y direction, reaches the third mirror 58, and is reflected by the third mirror 58 in the -Z direction, and reaches the fourth mirror 59. The fourth reflecting mirror 59 reflects the drawing light beam LB in the + Y direction and enters the first beam splitter 60. The first beam splitter 60 reflects a part of the light amount components of the drawing light beam LB in the -X direction to guide the second optical system 42, and guides the remaining light amount components of the drawing light beam LB to the third optical system 43. This implementation In the form, the drawing light beam LB guided to the second optical system 42 is then distributed to three drawing units UW1, UW3, UW5, and the drawing light beam LB guided to the third optical system 43 is then allocated to two drawing units UW2 , UW4. Therefore, the ratio of the reflectance to the transmittance of the first beam splitter 60 on the light splitting surface is preferably 3: 2 (reflection 60%, transmittance 40%), but it is not necessarily necessary, and it may be 1: 1.

此處,第3反射鏡58與第4反射鏡59係在移動機構24之旋轉軸I上相距既定間隔設置。亦即,於第3反射鏡58反射而朝向第4反射鏡59之描繪光束LB(平行光束)之中心線,係設定成與旋轉軸I一致(成同軸)。 Here, the third reflecting mirror 58 and the fourth reflecting mirror 59 are provided at a predetermined interval on the rotation axis I of the moving mechanism 24. That is, the center line of the drawing light beam LB (parallel light beam) reflected by the third mirror 58 and directed toward the fourth mirror 59 is set to coincide with (coaxially) with the rotation axis I.

又,包含第3反射鏡58至光源裝置CNT為止之構成(在圖4之Z方向上方側,以二點鍊線圍繞之部分)係設於本體框架21側,另一方面,包含第4反射鏡59至複數個描繪單元UW1~UW5之構成(在圖4之Z方向下方側,以二點鍊線圍繞之部分)係設於第2光學平台25側。由於第3反射鏡58與第4反射鏡59係設置成即使以移動機構24使第1光學平台23與第2光學平台25相對旋轉,描繪光束LB亦會與旋轉軸I同軸通過,因此從第4反射鏡59至第1分束器60之描繪光束LB之光路不會變更。從而,即使以移動機構24使第2光學平台25相對第1光學平台23旋轉,亦能將從設置在本體框架21側之光源裝置CNT射出之描繪光束LB,適當、安定的引導向設在第2光學平台25側之複數個描繪單元UW1~UW5。 In addition, the structure including the third reflecting mirror 58 to the light source device CNT (the portion surrounded by the two-point chain line on the upper side in the Z direction in FIG. 4) is provided on the main body frame 21 side, and on the other hand, it includes the fourth reflection The configuration of the mirror 59 to the plurality of drawing units UW1 to UW5 (the part surrounded by a two-point chain line on the lower side in the Z direction in FIG. 4) is provided on the second optical table 25 side. Since the third reflecting mirror 58 and the fourth reflecting mirror 59 are provided so that the first optical stage 23 and the second optical stage 25 are relatively rotated by the moving mechanism 24, the drawing light beam LB will pass coaxially with the rotation axis I. The optical paths of the drawing beams LB of the four mirrors 59 to the first beam splitter 60 are not changed. Therefore, even if the second optical table 25 is rotated relative to the first optical table 23 by the moving mechanism 24, the drawing light beam LB emitted from the light source device CNT provided on the main body frame 21 side can be guided appropriately and stably to the first optical table 23. 2 A plurality of drawing units UW1 to UW5 on the optical platform 25 side.

第2光學系42,將於第1光學系41之第1分束器60分歧之一方之描繪光束LB,分歧導向後述之奇數號描繪單元UW1、UW3、UW5。第2光學系42,具有第5反射鏡61、第2分束器62、第3分束器63、以及 第6反射鏡64。 The second optical system 42 divides the first drawing beam LB of the first optical beam splitter 60 of the first optical system 41 into the drawing light beam LB, and guides the divided light beams LB to the odd-numbered drawing units UW1, UW3, and UW5 described later. The second optical system 42 includes a fifth mirror 61, a second beam splitter 62, a third beam splitter 63, and The sixth reflector 64.

於第1光學系41之第1分束器60被反射向-X方向之描繪光束LB,被第5反射鏡61往-Y方向反射後,射入第2分束器62。射入第2分束器62之描繪光束LB,其一部分被反射向-Z方向,導向奇數號之1個描繪單元UW5(參照圖5)。穿透過第2分束器62之描繪光束LB射入第3分束器63。射入第3分束器63之描繪光束LB,其一部分被反射向-Z方向,導向奇數號之1個描繪單元UW3(參照圖5)。而穿透過第3分束器63之描繪光束LB之一部分被第6反射鏡64反射向-Z方向,導向奇數號之1個描繪單元UW1(參照圖5)。又,於第2光學系42,照射於奇數號描繪單元UW1、UW3、UW5之描繪光束LB,相對-Z方向略微傾斜。 The first beam splitter 60 of the first optical system 41 is reflected by the drawing beam LB in the -X direction, is reflected by the fifth mirror 61 in the -Y direction, and enters the second beam splitter 62. A part of the drawing light beam LB that has entered the second beam splitter 62 is reflected in the -Z direction, and is guided to one of the odd-numbered drawing units UW5 (see Fig. 5). The drawn light beam LB transmitted through the second beam splitter 62 is incident on the third beam splitter 63. A part of the drawing light beam LB that has entered the third beam splitter 63 is reflected in the -Z direction, and is guided to one of the odd-numbered drawing units UW3 (see Fig. 5). A part of the drawing beam LB passing through the third beam splitter 63 is reflected by the sixth mirror 64 in the -Z direction, and is guided to one of the odd-numbered drawing units UW1 (see FIG. 5). Further, in the second optical system 42, the drawing light beams LB irradiated to the odd-numbered drawing units UW1, UW3, and UW5 are slightly inclined with respect to the -Z direction.

又,為有效利用描繪光束LB之功率,使第2分束器62之反射率與穿透率之比接近1:2、第3分束器63之反射率與穿透率之比接近1:1較佳。 In addition, in order to effectively use the power of the drawing beam LB, the ratio of the reflectance and transmittance of the second beam splitter 62 is close to 1: 2, and the ratio of the reflectance and transmittance of the third beam splitter 63 is close to 1: 1 is better.

另一方面,第3光學系43將於第1光學系41之第1分束器60分歧之另一方之描繪光束LB,分歧導向後述之偶數號描繪單元UW2、UW4。第3光學系43,具有第7反射鏡71、光束位移機構45、第8反射鏡72、第4分束器73、以及第9反射鏡74。 On the other hand, the third optical system 43 diverges the drawing beam LB on the other side of the first beam splitter 60 of the first optical system 41 and diverges to the even-numbered drawing units UW2 and UW4 described later. The third optical system 43 includes a seventh mirror 71, a beam displacement mechanism 45, an eighth mirror 72, a fourth beam splitter 73, and a ninth mirror 74.

於第1光學系41之第1分束器60往+Y方向穿透之描繪光束LB,被第7反射鏡71反射向+X方向,穿透光束位移機構45後射入第8反射鏡72。光束位移機構45,係以和光束位移機構44同樣之可傾斜的2片平行平面板(石英)構成,使朝向第8反射鏡72往+X方向前進之描繪光束LB於ZY面內橫移。 The drawing beam LB transmitted through the first beam splitter 60 of the first optical system 41 in the + Y direction is reflected by the seventh mirror 71 in the + X direction, passes through the beam displacement mechanism 45, and enters the eighth mirror 72 . The beam shifting mechanism 45 is composed of two parallel flat plates (quartz) that can be tilted in the same way as the beam shifting mechanism 44 and moves the drawing beam LB advancing toward the eighth mirror 72 in the + X direction in the ZY plane.

被第8反射鏡72反射向-Y方向之描繪光束LB,射入第4分束器73。照射於第4分束器73之描繪光束LB,其一部分被反射向-Z方向,導向偶數號之1個描繪單元UW4(參照圖5)。穿透過第4分束器73之描繪光束LB,被第9反射鏡74反射向-Z方向,導向偶數號之1個描繪單元UW2。又,於第3光學系43,照射於偶數號描繪單元UW2、UW4之描繪光束LB,亦係相對-Z方向略微傾斜。 The drawing beam LB reflected in the -Y direction by the eighth mirror 72 enters the fourth beam splitter 73. A part of the drawing light beam LB irradiated to the fourth beam splitter 73 is reflected in the -Z direction, and is guided to one even drawing unit UW4 (see FIG. 5). The drawing light beam LB transmitted through the fourth beam splitter 73 is reflected by the ninth reflector 74 in the -Z direction, and is guided to one even drawing unit UW2. In addition, in the third optical system 43, the drawing light beams LB radiated to the even-numbered drawing units UW2 and UW4 are also slightly inclined with respect to the -Z direction.

如以上所述,於分歧光學系SL,朝向複數個描繪單元UW1~UW5,將來自光源裝置CNT之描繪光束LB分歧為複數條。此時,第1分束器60、第2分束器62、第3分束器63及第4分束器73,其反射率(穿透率)係視描繪光束LB之分歧數調整為適當的反射率,以使照射於複數個描繪單元UW1~UW5之描繪光束LB之光束強度為相同強度。 As described above, in the branching optical system SL, the plurality of rendering light beams LB from the light source device CNT are branched into a plurality of rendering units UW1 to UW5. At this time, the reflectance (transmittance) of the first beam splitter 60, the second beam splitter 62, the third beam splitter 63, and the fourth beam splitter 73 is appropriately adjusted depending on the number of divergences of the drawing beam LB. So that the light beam intensity of the drawing light beams LB irradiated to the plurality of drawing units UW1 to UW5 is the same.

光束位移機構44配置在第2中繼透鏡56與第2反射鏡57之間。光束位移機構44可將在基板P上形成之描繪線LL1~LL5之所有位置,在基板P之描繪面內以μm級進行微調。 The beam displacement mechanism 44 is disposed between the second relay lens 56 and the second reflector 57. The beam displacement mechanism 44 can fine-tune all positions of the drawing lines LL1 to LL5 formed on the substrate P in the μm order within the drawing surface of the substrate P.

又,光束位移機構45,可將基板P上形成之描繪線LL1~LL5中、偶數號之第2描繪線LL2及第4描繪線LL4於基板P之描繪面內以μm級進行微調。 In addition, the beam displacement mechanism 45 can fine-tune the second drawing line LL2 and the fourth drawing line LL4 of the even number among the drawing lines LL1 to LL5 formed on the substrate P in the μm order on the drawing surface of the substrate P.

進一步參照圖4、圖5及圖7,說明複數個描繪單元UW1~UW5。如圖4(及圖1)所示,複數個描繪單元UW1~UW5係夾著中心面p3於旋轉圓筒DR之周方向配置成2行。複數個描繪單元UW1~UW5,於夾著中心面p3配置第1、第3、第5描繪線LL1、LL3、LL5之側(圖5之-X方向側),配置第1描繪單元UW1、第3描繪單元UW3及第5描繪單 元UW5。第1描繪單元UW1、第3描繪單元UW3及第5描繪單元UW5,於Y方向相距既定間隔配置。又,複數個描繪單元UW1~UW5,於夾著中心面p3配置第2、第4描繪線LL2、LL4之側(圖5之+X方向側),配置第2描繪單元UW2及第4描繪單元UW4。第2描繪單元UW2及第4描繪單元UW4,於Y方向相距既定間隔配置。此時,如之前之圖2、或圖5所示,第2描繪單元UW2,於Y方向係配置在第1描繪單元UW1與第3描繪單元UW3之間。同樣的,第3描繪單元UW3,於Y方向係配置在第2描繪單元UW2與第4描繪單元UW4之間。第4描繪單元UW4,於Y方向配置在第3描繪單元UW3與第5描繪單元UW5之間。又,如圖4所示,第1描繪單元UW1、第3描繪單元UW3及第5描繪單元UW5與第2描繪單元UW2及第4描繪單元UW4,從Y方向看,係以中心面p3為中心對稱配置。 Further referring to FIGS. 4, 5 and 7, a plurality of drawing units UW1 to UW5 will be described. As shown in FIG. 4 (and FIG. 1), the plurality of drawing units UW1 to UW5 are arranged in two rows in the circumferential direction of the rotating cylinder DR with the center plane p3 interposed therebetween. The plurality of drawing units UW1 to UW5 are provided with the first, third, and fifth drawing lines LL1, LL3, and LL5 on the center plane p3 (the -X direction side in FIG. 5), and the first drawing unit UW1 and 3 drawing unit UW3 and 5th drawing sheet Yuan UW5. The first drawing unit UW1, the third drawing unit UW3, and the fifth drawing unit UW5 are arranged at predetermined intervals in the Y direction. In addition, the plurality of drawing units UW1 to UW5 are arranged on the side (the + X direction side in FIG. 5) of the second and fourth drawing lines LL2 and LL4 with the center plane p3 interposed therebetween, and the second drawing unit UW2 and the fourth drawing unit are arranged. UW4. The second drawing unit UW2 and the fourth drawing unit UW4 are arranged at predetermined intervals in the Y direction. At this time, as shown in FIG. 2 or FIG. 5 described above, the second drawing unit UW2 is arranged between the first drawing unit UW1 and the third drawing unit UW3 in the Y direction. Similarly, the third drawing unit UW3 is arranged between the second drawing unit UW2 and the fourth drawing unit UW4 in the Y direction. The fourth drawing unit UW4 is arranged between the third drawing unit UW3 and the fifth drawing unit UW5 in the Y direction. As shown in FIG. 4, the first drawing unit UW1, the third drawing unit UW3, the fifth drawing unit UW5, the second drawing unit UW2, and the fourth drawing unit UW4 are centered on the center plane p3 when viewed from the Y direction Symmetric configuration.

其次,參照圖4說明各描繪單元UW1~UW5內之光學系之構成。又,由於各描繪單元UW1~UW5為相同構成,因此以第1描繪單元UW1(以下,僅稱描繪單元UW1)為例加以說明。 Next, the configuration of the optical system in each of the drawing units UW1 to UW5 will be described with reference to FIG. 4. Since the drawing units UW1 to UW5 have the same configuration, the first drawing unit UW1 (hereinafter, simply referred to as the drawing unit UW1) will be described as an example.

圖4所示之描繪單元UW1,為沿描繪線LL1(第1描繪線LL1)掃描描繪光束LB之點光,具備光偏向器81、偏光分束器PBS、1/4波長板82、掃描器83、彎折鏡84、f-θ透鏡系85、以及包含柱面透鏡86之Y倍率修正用光學構件(透鏡群)86B。又,與偏向分束器PBS相鄰設有校準檢測系31。 The drawing unit UW1 shown in FIG. 4 is for scanning the spot light of the drawing beam LB along the drawing line LL1 (the first drawing line LL1), and includes a light deflector 81, a polarizing beam splitter PBS, a 1/4 wavelength plate 82, and a scanner. 83. A bending mirror 84, an f-θ lens system 85, and a Y-power correction optical member (lens group) 86B including a cylindrical lens 86. A calibration detection system 31 is provided adjacent to the deflection beam splitter PBS.

光偏向器81,係使用例如聲光元件(AOM:AcoustIic Optic Modulator)。AOM係藉由是否在內部以超音波(高頻訊號)生成繞射光柵, 據以在使入射之描繪光束之1次繞射光產生於既定繞射角方向之ON狀態、與不產生一次繞射光之OFF狀態進行切換的光切換元件。 The light deflector 81 is, for example, an acoustooptic device (AOM: AcoustIic Optic Modulator). AOM is based on whether the diffraction grating is generated internally by ultrasonic waves (high frequency signals). According to this, a light switching element that switches the primary diffraction light incident to the ON state in a predetermined diffraction angle direction and the OFF state that does not generate primary diffraction light is generated.

圖1所示之控制部16,藉由進行光偏向器81之ON/OFF切換,據以高速進行描繪光束LB對基板P之投射/非投射的切換。具體而言,以分歧光學系SL分配之描繪光束LB之1個透過中繼透鏡91相對-Z方向略微傾斜的照射於光偏向器81。當將光偏向器81切換為OFF時,描繪光束LB即以傾斜狀態直進,而被設在通過光偏向器81之後之遮光板92遮光。另一方面,當將光偏向器81切換為ON時,描繪光束LB(1次繞射光)即往-Z方向偏向,通過光偏向器81而照射於設在光偏向器81之Z方向上的偏光分束器PBS。因此,當將光偏向器81切換為ON時,描繪光束LB之點光即投射於基板P,當將光偏向器81切換為OFF時,描繪光束LB之點光不會投射於基板P。 The control unit 16 shown in FIG. 1 switches the projection / non-projection of the drawing beam LB to the substrate P at high speed by performing ON / OFF switching of the light deflector 81. Specifically, one of the drawing light beams LB allocated by the branch optical system SL passes through the relay lens 91 and is irradiated to the light deflector 81 with a slight inclination with respect to the -Z direction. When the light deflector 81 is switched OFF, the drawing light beam LB goes straight in an inclined state, and the light shielding plate 92 provided after passing through the light deflector 81 blocks light. On the other hand, when the light deflector 81 is turned ON, the drawing light beam LB (first-order diffraction light) is deflected in the -Z direction, and the light deflector 81 is irradiated onto the Z direction provided in the light deflector 81. Polarized beam splitter PBS. Therefore, when the light deflector 81 is switched on, the point light of the drawing beam LB is projected on the substrate P, and when the light deflector 81 is switched off, the point light of the drawing beam LB is not projected on the substrate P.

又,由於AOM係配置在藉由中繼透鏡91收斂之描繪光束LB之光腰的位置,因此從光偏向器81射出之描繪光束LB(1次繞射光)會發散。為此,於光偏向器81之後設有使發散之描繪光束LB變回平行光束的中繼透鏡93。 In addition, since the AOM is disposed at the position of the optical waist of the drawing light beam LB converged by the relay lens 91, the drawing light beam LB (primary diffraction light) emitted from the light deflector 81 diverges. To this end, a relay lens 93 is provided behind the light deflector 81 to change the divergent drawing light beam LB back to a parallel light beam.

偏光分束器PBS反射從光偏向器81透過中繼透鏡93照射之描繪光束LB。從偏光分束器PBS射出之描繪光束LB依1/4波長板82、掃描器83(旋轉多面鏡)、彎折鏡84、f-θ透鏡系85、Y倍率修正用光學構件86B及柱面透鏡86之順序前進,於基板P上聚光成掃描點光。 The polarizing beam splitter PBS reflects the drawing beam LB radiated from the light deflector 81 through the relay lens 93. The drawing light beam LB emitted from the polarizing beam splitter PBS is based on a 1/4 wavelength plate 82, a scanner 83 (rotating polygon mirror), a bending mirror 84, an f-θ lens system 85, a Y-magnification correction optical member 86B, and a cylindrical surface. The order of the lens 86 advances, and the light is collected on the substrate P into scanning spot light.

另一方面,偏光分束器PBS與設在偏光分束器PBS與掃描器83之間之1/4波長板82協力動作,投射在基板P或其下之旋轉圓筒DR 外周面之描繪光束LB之反射光,依Y倍率修正用光學構件86B、柱面透鏡86、f-θ透鏡系85、彎折鏡84、掃描器83之順序反向前進,因此可使該反射光穿透。也就是說,從光偏向器81照射於偏光分束器PBS之描繪光束LB係S偏光之直線偏光的雷射光,被偏光分束器PBS反射。又,被偏光分束器PBS反射之描繪光束LB,通過1/4波長板82、掃描器83、彎折鏡84、f-θ透鏡系85、Y倍率修正用光學構件86B、柱面透鏡86照射於基板P,聚光於基板P上之描繪光束LB之點光成為圓偏光。來自基板P(或旋轉圓筒DR外周面)之反射光,藉反向前進於描繪光束LB之送光路,並再次通過1/4波長板82,而成為P偏光之直線偏光的雷射光。因此,從基板P(或旋轉圓筒DR)到達偏光分束器PBS之反射光穿透偏光分束器PBS,透過中繼透鏡94照射於校準檢測系31之光電感測器31Cs。 On the other hand, the polarizing beam splitter PBS and the 1/4 wavelength plate 82 provided between the polarizing beam splitter PBS and the scanner 83 work in concert to project on the substrate P or a rotating cylinder DR below it. The reflected light of the drawing beam LB on the outer peripheral surface is reversely advanced in the order of the Y-magnification correction optical member 86B, the cylindrical lens 86, the f-θ lens system 85, the bending mirror 84, and the scanner 83. Light penetrates. That is, the linearly polarized laser light depicting the light beam LB series S-polarized light irradiated from the light deflector 81 to the polarization beam splitter PBS is reflected by the polarization beam splitter PBS. The drawing beam LB reflected by the polarizing beam splitter PBS passes through the 1/4 wavelength plate 82, the scanner 83, the bending mirror 84, the f-θ lens system 85, the Y-magnification correction optical member 86B, and the cylindrical lens 86. The spot light of the drawing light beam LB that is irradiated on the substrate P and condensed on the substrate P becomes circularly polarized light. The reflected light from the substrate P (or the outer peripheral surface of the rotating cylinder DR) advances in a reverse direction to the light transmission path of the drawing beam LB, and passes through the quarter-wave plate 82 again, and becomes a laser light of linearly polarized light of P polarization. Therefore, the reflected light reaching the polarizing beam splitter PBS from the substrate P (or the rotating cylinder DR) passes through the polarizing beam splitter PBS, and is irradiated to the photodetector 31Cs of the calibration detection system 31 through the relay lens 94.

如前所述,偏光向分束器PBS係配置在包含掃描器83之掃描光學系與校準檢測系31之間的光分割器。由於校準檢測系31共用多數將描繪光束LB送往基板P之送光光學系的一部分,因此係一簡易且精巧的光學系。 As described above, the polarizing beam splitter PBS is a light splitter arranged between the scanning optical system including the scanner 83 and the calibration detection system 31. Since the calibration detection system 31 shares a part of the light-transmitting optical system that mostly sends the drawing beam LB to the substrate P, it is a simple and compact optical system.

如圖4及圖7所示,掃描器83具有反射鏡96、旋轉多面鏡(旋轉多面鏡)97、與原點檢測器98。通過1/4波長板82之描繪光束LB(平行光束),透過柱面透鏡95被反射鏡96在XY面內反射,照射於旋轉多面鏡97。旋轉多面鏡97包含延伸於Z方向之旋轉軸97a、與形成在旋轉軸97a周圍之複數個反射面97b而構成。旋轉多面鏡97,藉由以旋轉軸97a為中心往既定旋轉方向旋轉,據以使照射於反射面97b之描繪光束LB(經光偏向器81強度調變之光束)之反射角在XY面內連續變化,據此,反射 之描繪光束LB即因彎折鏡84、f-θ透鏡系85、第2柱面透鏡86(及Y倍率修正用光學構件86B)而聚光成點光,沿基板P上之描繪線LL1(同樣的,沿LL2~LL5)掃描。原點檢測器98係檢測沿基板P之描繪線LL1(同樣的,沿LL2~LL5)掃描之描繪光束LB之原點。原點檢測器98,夾著於各反射面97b反射之描繪光束LB,配置在反射鏡96之相反側。 As shown in FIGS. 4 and 7, the scanner 83 includes a reflecting mirror 96, a rotating polygon mirror (rotating polygon mirror) 97, and an origin detector 98. The drawing light beam LB (parallel light beam) passing through the 1/4 wavelength plate 82 passes through the cylindrical lens 95 and is reflected by the mirror 96 in the XY plane, and irradiates the rotating polygon mirror 97. The rotating polygon mirror 97 includes a rotating shaft 97a extending in the Z direction and a plurality of reflecting surfaces 97b formed around the rotating shaft 97a. The rotating polygon mirror 97 rotates in a predetermined rotation direction with the rotation axis 97a as a center, so that the reflection angle of the drawing light beam LB (light beam modulated by the light deflector 81) on the reflecting surface 97b is within the XY plane. Continuous change, and accordingly, reflection The drawing light beam LB is condensed into point light by the bending mirror 84, the f-θ lens system 85, and the second cylindrical lens 86 (and the Y-magnification correction optical member 86B), and is drawn along the drawing line LL1 ( Similarly, scan along LL2 ~ LL5). The origin detector 98 detects the origin of the drawing beam LB scanned along the drawing line LL1 (similarly, along LL2 to LL5) of the substrate P. The origin detector 98 is arranged on the opposite side of the reflecting mirror 96 with the drawing light beam LB reflected by each reflecting surface 97b.

圖7中,為簡化說明,原點檢測器98雖僅圖示光電檢測器,但實際上,設有朝向描繪光束LB投射之旋轉多面鏡97之反射面97b投射檢測用光束之LED及半導體雷射等的檢測用光源,原點檢測器98對該檢測用光束於反射面97b之反射光透過細狹縫進行光電檢測。 In FIG. 7, to simplify the description, although the origin detector 98 only shows a photodetector, in fact, an LED and a semiconductor mine are provided which project a detection beam toward a reflecting surface 97 b of a rotating polygon mirror 97 that projects the drawing beam LB. The light source for detection, such as radiation, is detected by the origin detector 98 through the fine slit through the reflection light of the detection light beam on the reflecting surface 97b.

據此,原點檢測器98被設定為相對點光照射於基板P上之描繪線LL1(LL2~LL5)之描繪開始位置的時間點,恆早一定時間,輸出表示原點之脈衝訊號。 Based on this, the origin detector 98 is set to output a pulse signal representing the origin at a certain time in the beginning of the drawing starting position of the drawing line LL1 (LL2 to LL5) on the substrate P relative to the point light.

從掃描器83照射於彎折鏡84之描繪光束LB被彎折鏡84反射向-Z方向,射入f-θ透鏡系85、柱面透鏡86(及Y倍率修正用光學構件86B)。 The drawing beam LB radiated from the scanner 83 to the bending mirror 84 is reflected by the bending mirror 84 in the -Z direction, and enters the f-θ lens system 85 and the cylindrical lens 86 (and the Y-magnification correction optical member 86B).

當旋轉多面鏡97之各反射面97b相對旋轉軸97a之中心線非嚴謹的平行、而是略微傾斜(面傾斜)時,投射在基板P上之點光形成之描繪線(LL1~LL5),會就每一反射面97b在基板P上於X方向偏移。因此,使用圖8,說明藉由2個柱面透鏡95、86之設置,針對旋轉多面鏡97之各反射面97b之面傾斜,降低或消除描繪線LL1~LL5往X方向之偏移情形。 When each reflection surface 97b of the rotating polygon mirror 97 is not strictly parallel to the center line of the rotation axis 97a, but is slightly inclined (plane inclined), the drawing lines (LL1 ~ LL5) formed by the point light projected on the substrate P, Each reflecting surface 97b is shifted in the X direction on the substrate P. Therefore, with reference to FIG. 8, with the arrangement of the two cylindrical lenses 95 and 86, the tilt of the reflecting surfaces 97 b of the rotating polygon mirror 97 is reduced and the shift of the drawing lines LL1 to LL5 in the X direction is reduced or eliminated.

圖8之左側顯示將柱面透鏡95、掃描器83、f-θ透鏡系85、 柱面透鏡86之光路展開於XY平面之狀態,圖8之右側則顯示將該光路於XZ平面內展開的狀態。作為基本的光學配置,旋轉多面鏡97之被描繪光束LB照射之反射面97b係配置成位於f-θ透鏡系85之入射光瞳位置(前側焦點位置)。據此,相對旋轉多面鏡97之旋轉角θp/2,射入f-θ透鏡系85之描繪光束LB之入射角成為θp,與該入射角θp成正比決定投射於基板P(被照射面)上之點光之像高位置。又,藉由將反射面97b配置在f-θ透鏡系85之前側焦點位置,投射於基板P之描繪光束LB在描繪線上之任何位置下皆成為遠心狀態(為點光之描繪光束之主光線恆與f-θ透鏡系85之光軸AXf成平行的狀態)。 The left side of FIG. 8 shows a cylindrical lens 95, a scanner 83, an f-θ lens system 85, The optical path of the cylindrical lens 86 is developed in the XY plane, and the right side of FIG. 8 shows the optical path in the XZ plane. As a basic optical configuration, the reflecting surface 97 b of the rotating polygon mirror 97 irradiated by the depicted light beam LB is arranged so as to be located at the entrance pupil position (front focus position) of the f-θ lens system 85. Based on this, the relative rotation angle θp / 2 of the relative rotating polygon mirror 97, and the incident angle of the drawing beam LB entering the f-θ lens system 85 becomes θp, which is proportional to the incident angle θp, and is determined to be projected on the substrate P (irradiated surface) The point of light is the height of the image. In addition, by arranging the reflecting surface 97b at the focal position in front of the f-θ lens system 85, the drawing beam LB projected on the substrate P becomes telecentric at any position on the drawing line (the main ray of the drawing beam of point light) Constant to the optical axis AXf of the f-θ lens system 85).

如圖8所示,2個柱面透鏡95、86在與旋轉多面鏡97之旋轉軸97a垂直之面(XY面)內,皆做為折射力(power)為零之平行平板玻璃發揮其功能,於旋轉軸97a延伸之Z方向(XZ面內)則作為具有一定之正折射力的凸透鏡發揮其功能。射入第1柱面透鏡95之描繪光束LB(大致平行光束)之剖面形狀雖為數mm程度之圓形,但當將柱面透鏡95在XZ面內之焦點位置透過反射鏡96設定在旋轉多面鏡97之反射面97b上時,於XY面內即具有數mm之光束寬度,於Z方向則由收斂之狹縫狀點光在反射面97b上延伸於旋轉方向聚光。 As shown in FIG. 8, the two cylindrical lenses 95 and 86 perform their functions as parallel flat glasses with zero power in the plane (XY plane) perpendicular to the rotation axis 97 a of the rotating polygon mirror 97. The Z direction (in the XZ plane) extending in the rotation axis 97a functions as a convex lens with a certain positive refractive power. Although the cross-sectional shape of the drawing beam LB (substantially parallel light beam) incident on the first cylindrical lens 95 is a circle of several mm, when the focal position of the cylindrical lens 95 in the XZ plane is set to the multi-rotation surface through the mirror 96 When the reflecting surface 97b of the mirror 97 is on the XY plane, it has a beam width of several mm, and in the Z direction, the converging slit-shaped spot light extends on the reflecting surface 97b and converges in the rotation direction.

於旋轉多面鏡97之反射面97b反射之描繪光束LB,在XY面內雖為平行光束,但在XZ面內(旋轉軸97a延伸之方向)則係成為發散光束射入f-θ透鏡系85。因此,從f-θ透鏡系85射出後之描繪光束LB,在XZ面內(旋轉軸97a延伸之方向)雖大致為平行光束,但因第2柱面透鏡86之作用,在XZ面內、亦即在基板P上在與描繪線LL1~LL5延伸之 方向正交之基板P之搬送方向,亦係聚光為點光。其結果,於基板P上之各描繪線上,投射圓形之小點光。 The drawing light beam LB reflected on the reflecting surface 97b of the rotating polygon mirror 97 is a parallel light beam in the XY plane, but in the XZ plane (the direction in which the rotation axis 97a extends) becomes a divergent light beam and enters the f-θ lens system 85. . Therefore, although the drawing light beam LB emitted from the f-θ lens system 85 is approximately a parallel light beam in the XZ plane (the direction in which the rotation axis 97a extends), the second cylindrical lens 86 acts in the XZ plane. That is, on the substrate P, it extends from the drawing lines LL1 to LL5. The conveying direction of the substrate P whose direction is orthogonal is also the point light. As a result, a circular small spot light is projected on each drawing line on the substrate P.

藉由柱面透鏡86之設置,如圖8之右側所示,於XZ面內,可將旋轉多面鏡97之反射面97b與基板P(被照射面)設定成光學上像共軛關係。因此,即使旋轉多面鏡97之各反射面97b相對與描繪光束LB之掃描方向正交之非掃描方向(旋轉軸97a延伸之方向)具有傾斜誤差,基板P上之描繪線(LL1~LL5)之位置,亦不會偏移於點光之非掃描方向(基板P之搬送方向)。如上所述,藉由在旋轉多面鏡97之前與後設置柱面透鏡95、86,即能構成對非掃描方向之多面反射面之面傾斜修正光學系。 With the arrangement of the cylindrical lens 86, as shown in the right side of FIG. 8, in the XZ plane, the reflection surface 97b of the rotating polygon mirror 97 and the substrate P (irradiated surface) can be set in an optical image conjugate relationship. Therefore, even if each reflection surface 97b of the rotating polygon mirror 97 has a tilt error with respect to a non-scanning direction (a direction in which the rotation axis 97a extends) orthogonal to the scanning direction of the drawing beam LB, the drawing lines (LL1 ~ LL5) on the substrate P The position is not shifted in the non-scanning direction of the spot light (the transport direction of the substrate P). As described above, by providing the cylindrical lenses 95 and 86 before and after rotating the polygon mirror 97, it is possible to constitute a surface tilt correction optical system for a polygonal reflecting surface in a non-scanning direction.

此處,如圖7所示,複數個描繪單元UW1~UW5之各掃描器83係相對中心面p3成對稱構成。複數個掃描器83,其與描繪單元UW1、UW3、UW5對應之3個掃描器83係配置在旋轉圓筒DR之旋轉方向上游側(圖7之-X方向側),與描繪單元UW2、UW4對應之2個掃描器83則配置在旋轉圓筒DR之旋轉方向下游側(圖7之+X方向側)。而上游側之3個掃描器83與下游側之2個掃描器83係夾著中心面p3對向配置。如此,上游側之3個掃描器83與下游側之2個掃描器83係以旋轉軸I(Z軸)為中心旋轉180°之配置關係。因此,當上游側之3個旋轉多面鏡97例如一邊向左旋轉、一邊於旋轉多面鏡97照射描繪光束LB時,被旋轉多面鏡97反射之描繪光束LB,即從描繪開始位置朝向描繪結束位置往既定掃描方向(例如圖7之+Y方向)掃描。另一方面,當下游側之2個旋轉多面鏡97一邊往左旋轉、一邊於旋轉多面鏡97照射描繪光束LB時,被旋轉多面鏡97反射之描繪光束LB,即從描繪開始位置朝向描繪結束位置,往與上游側之3 個旋轉多面鏡97’相反之掃描方向(例如圖7之-Y方向)掃描。 Here, as shown in FIG. 7, the scanners 83 of the plurality of drawing units UW1 to UW5 are symmetrically formed with respect to the center plane p3. A plurality of scanners 83. The three scanners 83 corresponding to the drawing units UW1, UW3, and UW5 are arranged on the upstream side (direction -X side in FIG. 7) of the rotation direction of the rotating cylinder DR, and are connected to the drawing units UW2 and UW4. The corresponding two scanners 83 are arranged on the downstream side (+ X direction side in FIG. 7) in the rotation direction of the rotating cylinder DR. The three scanners 83 on the upstream side and the two scanners 83 on the downstream side are arranged to face each other with the center plane p3 interposed therebetween. In this way, the three scanners 83 on the upstream side and the two scanners 83 on the downstream side are arranged to rotate 180 ° around the rotation axis I (Z axis). Therefore, when the three rotating polygon mirrors 97 on the upstream side rotate, for example, to the left and illuminate the drawing beam LB on the rotating polygon mirror 97, the drawing beam LB reflected by the rotating polygon mirror 97 goes from the drawing start position to the drawing end position. Scan in a predetermined scanning direction (for example, + Y direction in FIG. 7). On the other hand, when the two rotating polygon mirrors 97 on the downstream side rotate to the left and illuminate the drawing beam LB on the rotating polygon mirror 97, the drawing beam LB reflected by the rotating polygon mirror 97 goes from the drawing start position to the drawing end. Location, 3 to the upstream side The rotating polygon mirrors 97 'scan in opposite scanning directions (e.g., the -Y direction of Fig. 7).

此處,於圖4之XZ面內觀察時,從奇數號描繪單元UW1、UW3、UW5到達基板P之描繪光束LB之軸線,係與設置方位線Le1一致之方向。也就是說,設置方位線Le1,於XZ面內,係連結奇數號描繪線LL1、LL3、LL5與旋轉中心線AX2之線。同樣的,於圖4之XZ面內觀察時,從偶數號描繪單元UW2、UW4到達基板P之描繪光束LB之軸線,係與設置方位線Le2一致之方向。也就是說,設置方位線Le2,於XZ面內,係連結偶數號描繪線LL2、LL4與旋轉中心線AX2之線。因此,於基板P成點光投射之描繪光束LB之各行進方向(主光線),皆係設定成朝向旋轉圓筒DR之旋轉中心線AX2。 Here, when viewed in the XZ plane of FIG. 4, the axis of the drawing beam LB reaching the substrate P from the odd-numbered drawing units UW1, UW3, and UW5 is in a direction consistent with the set azimuth line Le1. That is, the azimuth line Le1 is set, and in the XZ plane, it is a line connecting the odd-numbered drawing lines LL1, LL3, and LL5 and the rotation center line AX2. Similarly, when viewed in the XZ plane of FIG. 4, the axis of the drawing beam LB reaching the substrate P from the even-numbered drawing units UW2 and UW4 is the same direction as the azimuth line Le2. In other words, the azimuth line Le2 is set, and in the XZ plane, it is a line connecting the even-numbered drawing lines LL2 and LL4 and the rotation center line AX2. Therefore, each traveling direction (principal light) of the drawing light beam LB projected as a point light on the substrate P is set to face the rotation center line AX2 of the rotation cylinder DR.

Y倍率修正用光學構件86B配置在f-θ透鏡系85與基板P之間。Y倍率修正用光學構件86B,可使以各描繪單元UW1~UW5形成之描繪線LL1~LL5,於Y方向,等方的微幅放大或縮小。 The Y-magnification correction optical member 86B is disposed between the f-θ lens system 85 and the substrate P. The optical component 86B for Y magnification correction enables the drawing lines LL1 to LL5 formed by the respective drawing units UW1 to UW5 to be enlarged or reduced slightly in the Y direction in equal directions.

具體而言,可使用將涵蓋描繪線LL1~LL5之各個之一定厚度之穿透性平行平面板(石英)於描繪線延伸之方向機械性的加以彎曲(bending)以使描繪線之Y方向倍率(掃描長)可變的機構,或使凸透鏡、凹透鏡、凸透鏡之3群透鏡系之一部分於光軸方向移動以使描繪線之Y方向倍率(掃描長)可變的機構等。 Specifically, a penetrating parallel plane plate (quartz) covering a certain thickness of each of the drawing lines LL1 to LL5 can be mechanically bent in the direction in which the drawing line extends to make the drawing line Y-direction magnification. (Scan length) a variable mechanism, or a mechanism in which a part of the three lens systems of a convex lens, a concave lens, and a convex lens is moved in the optical axis direction so that the Y-direction magnification (scan length) of the drawn line is variable.

以此方式構成之描繪裝置11,由控制部16控制各部於基板P上描繪既定圖案。也就是說,控制部16,在投射於基板P之描繪光束LB往掃描方向掃描之期間中,根據待描繪於基板P之圖案之CAD資訊,藉由對光偏向器81進行ON/OFF調變據以使描繪光束LB偏向,以於基板P之 光感應層上描繪出圖案。又,控制部16使沿描繪線LL1掃描之描繪光束LB之掃描方向、與基板P藉由旋轉圓筒DR之旋轉往搬送方向之移動同步,據以在曝光區域A7中對應描繪線LL1之部分描繪既定圖案。 In the drawing device 11 configured in this manner, the control unit 16 controls each unit to draw a predetermined pattern on the substrate P. That is, the control unit 16 performs ON / OFF adjustment of the light deflector 81 based on the CAD information of the pattern to be drawn on the substrate P while the drawing beam LB projected on the substrate P is scanning in the scanning direction. According to this, the drawing light beam LB is deflected, so that the substrate P A pattern is drawn on the light-sensing layer. In addition, the control unit 16 synchronizes the scanning direction of the drawing beam LB scanned along the drawing line LL1 with the movement of the substrate P to the conveying direction by the rotation of the rotating cylinder DR, and accordingly corresponds to the portion of the drawing line LL1 in the exposure area A7. Draw a predetermined pattern.

其次,一併參照圖3與圖9,說明對準顯微鏡AM1、AM2。對準顯微鏡AM1、AM2檢測預先形成在基板P上之對準標記、或形成在旋轉圓筒DR上之基準標記及基準圖案等。以下,將基板P之對準標記及旋轉圓筒DR之基準標記及基準圖案,僅簡稱為標記。對準顯微鏡AM1、AM2係用於進行基板P與描繪在基板P上之既定圖案之位置對準、或旋轉圓筒DR與描繪裝置11之校準。 Next, the alignment microscopes AM1 and AM2 will be described with reference to FIGS. 3 and 9. The alignment microscopes AM1 and AM2 detect alignment marks formed on the substrate P in advance, or reference marks and reference patterns formed on the rotating cylinder DR. Hereinafter, the alignment marks of the substrate P and the reference marks and reference patterns of the rotating cylinder DR are simply referred to as marks. The alignment microscopes AM1 and AM2 are used for aligning the positions of the substrate P and a predetermined pattern drawn on the substrate P, or the calibration of the rotating cylinder DR and the drawing device 11.

對準顯微鏡AM1、AM2,較以描繪裝置11形成之描繪線LL1~LL5,設置在旋轉圓筒DR之旋轉方向(基板P之搬送方向)上游側。又,對準顯微鏡AM1較對準顯微鏡AM2配置在旋轉圓筒DR之旋轉方向上游側。 The alignment microscopes AM1 and AM2 are positioned more upstream than the drawing lines LL1 to LL5 formed by the drawing device 11 in the rotation direction (the conveying direction of the substrate P) of the rotating cylinder DR. The alignment microscope AM1 is disposed on the upstream side in the rotation direction of the rotating cylinder DR than the alignment microscope AM2.

對準顯微鏡AM1、AM2,係由將照明光投射於基板P或旋轉圓筒DR並射入於標記產生之光之作為檢測探針的對物透鏡系GA(圖9中僅代表性的顯示對準顯微鏡AM2之對物透鏡系GA4)、以及將透過對物透鏡系GA受光之標記之像(亮視野像、暗視野像、螢光像等)以2維CCD、CMOS等加以拍攝的攝影系GD(圖9中僅代表性的顯示對準顯微鏡AM2之拍攝GD4)等構。又,對準用之照明光係對基板P上之光感應層幾乎不具有感度之波長帶之光、例如波長500~800nm程度光。 The aiming microscopes AM1 and AM2 are object lens systems GA (see FIG. 9 which are representative lenses only) as detection probes that project illumination light onto the substrate P or the rotating cylinder DR and emit the light generated by the mark. Quasi-microscope AM2 (objective lens system GA4), and a photography system that captures images (bright field image, dark field image, fluorescent image, etc.) of the mark received by the objective lens system GA (bright field image, dark field image, fluorescent image, etc.) GD (only representative display GD4 of the alignment microscope AM2 in FIG. 9). In addition, the illumination light for alignment is light in a wavelength band that has almost no sensitivity to the light-sensing layer on the substrate P, for example, light having a wavelength of about 500 to 800 nm.

對準顯微鏡AM1於Y方向(基板P之寬度方向)排成一行設有複數個(例如3個)。同樣的,對準顯微鏡AM2於Y方向(基板P之 寬度方向)排成一行設有複數個(例如3個)。也就是說,對準顯微鏡AM1、AM2合計設有6個。 A plurality of alignment microscopes AM1 (for example, three) are arranged in a row in the Y direction (the width direction of the substrate P). Similarly, align the microscope AM2 in the Y direction (the substrate P A plurality of (for example, three) are arranged in a row in a width direction. That is, a total of six alignment microscopes AM1 and AM2 are provided.

圖3中,為易於理解,於6個對準顯微鏡AM1、AM2之各對物透鏡系GA中,顯示3個對準顯微鏡AM1之各對物透鏡系GA1~GA3之配置。3個對準顯微鏡AM1之各對物透鏡系GA1~GA3對基板P(或旋轉圓筒DR之外周面)上之觀察區域(檢測位置)Vw1~Vw3,如圖3所示,係在與旋轉中心線AX2平行之Y方向,以既定間隔配置。如圖9所示,通過各觀察區域Vw1~Vw3中心之各對物透鏡系GA1~GA3之光軸La1~La3,皆與XZ面平行。同樣的,3個對準顯微鏡AM2之各對物透鏡系GA對基板P(或旋轉圓筒DR之外周面)上之觀察區域Vw4~Vw6,如圖3所示,在與旋轉中心線AX2平行之Y方向,以既定間隔配置。如圖9所示,通過各觀察區域Vw4~Vw6中心之各對物透鏡系GA之光軸La4~La6,亦皆與XZ面平行。而觀察區域Vw1~Vw3與觀察區域Vw4~Vw6,係於旋轉圓筒DR之旋轉方向以既定間隔配置。 In FIG. 3, for ease of understanding, the configuration of each pair of objective lens systems GA1 to GA3 of the three alignment microscopes AM1 is shown in the pair of objective lens systems GA of the six alignment microscopes AM1 and AM2. Each pair of objective lenses of the three alignment microscopes AM1 are GA1 ~ GA3 on the observation area (detection position) Vw1 ~ Vw3 on the substrate P (or the outer peripheral surface of the rotating cylinder DR), as shown in FIG. The center line AX2 is parallel to the Y direction and is arranged at a predetermined interval. As shown in FIG. 9, the optical axes La1 to La3 of the object lens systems GA1 to GA3 passing through the centers of the respective observation areas Vw1 to Vw3 are parallel to the XZ plane. Similarly, the observation areas Vw4 to Vw6 on the pair of objective lenses of the three alignment microscopes AM2, GA, and the substrate P (or the outer peripheral surface of the rotating cylinder DR) are parallel to the rotation center line AX2, as shown in FIG. The Y direction is arranged at predetermined intervals. As shown in FIG. 9, the optical axes La4 to La6 of the object lens systems GA passing through the centers of the respective observation areas Vw4 to Vw6 are also parallel to the XZ plane. The observation areas Vw1 to Vw3 and the observation areas Vw4 to Vw6 are arranged at predetermined intervals in the rotation direction of the rotating cylinder DR.

此對準顯微鏡AM1、AM2對標記之觀察區域Vw1~Vw6,係於基板P及旋轉圓筒DR上,例如設定在500~200μm對角程度之範圍。此處,對準顯微鏡AM1之光軸La1~La3、亦即對物透鏡系GA之光軸La1~La3,係設定成與從旋轉中心線AX2延伸於旋轉圓筒DR之徑方向之設置方位線Le3相同方向。如此,設置方位線Le3,於圖9之XZ面內觀察時,係連結對準顯微鏡AM1之觀察區域Vw1~Vw3與旋轉中心線AX2之線。同樣的,對準顯微鏡AM2之光軸La4~La6、亦即對物透鏡系GA之光軸La4~La6,係設定成與從旋轉中心線AX2延伸於旋轉圓筒DR之徑方向之設置 方位線Le4相同方向。如此,設置方位線Le4,於圖9之XZ面內觀察時,係連結對準顯微鏡AM2之觀察區域Vw4~Vw6與旋轉中心線AX2之線。此時,對準顯微鏡AM1由於與對準顯微鏡AM2相較係配置在旋轉圓筒DR之旋轉方向上游側,因此中心面p3與設置方位線Le3所成之角度,較中心面p3與設置方位線Le4所成之角度大。 The observation areas Vw1 to Vw6 of the alignment marks AM1 and AM2 on the marks are on the substrate P and the rotating cylinder DR, and are set, for example, in a range of 500 to 200 μm diagonally. Here, the optical axes La1 to La3 of the microscope AM1, that is, the optical axes La1 to La3 of the objective lens system GA, are set so as to correspond to the installation azimuth lines extending from the rotation center line AX2 in the radial direction of the rotating cylinder DR. Le3 is in the same direction. In this way, the azimuth line Le3 is set, and when viewed in the XZ plane of FIG. 9, it is a line connecting the observation areas Vw1 to Vw3 of the alignment microscope AM1 and the rotation center line AX2. Similarly, the optical axes La4 to La6 of the alignment microscope AM2, that is, the optical axes La4 to La6 of the objective lens system GA, are set so as to extend from the rotation center line AX2 to the radial direction of the rotating cylinder DR. The bearing line Le4 is in the same direction. In this way, the azimuth line Le4 is set, and when viewed in the XZ plane of FIG. 9, it is a line connecting the observation area Vw4 to Vw6 of the alignment microscope AM2 and the rotation center line AX2. At this time, since the alignment microscope AM1 is disposed on the upstream side of the rotation direction of the rotating cylinder DR compared with the alignment microscope AM2, the angle formed by the center plane p3 and the installation azimuth line Le3 is more than the center plane p3 and the installation azimuth line. Le4 makes a big angle.

於基板P上,如圖3所示,以5個描繪線LL1~LL5之各個描繪之曝光區域A7,於X方向相距既定間隔配置。於基板P上之曝光區域A7周圍,有用以進行位置對準之複數個對準標記Ks1~Ks3(以下,簡稱標記),例如形成為十字狀。 On the substrate P, as shown in FIG. 3, the exposure areas A7 drawn by each of the five drawing lines LL1 to LL5 are arranged at predetermined intervals in the X direction. Around the exposure area A7 on the substrate P, a plurality of alignment marks Ks1 to Ks3 (hereinafter, referred to as marks) for position alignment are formed in a cross shape, for example.

圖3中,標記Ks1係在曝光區域A7之-Y側周邊區域於X方向以一定間隔設置,標記Ks3在曝光區域A7之+Y側周邊區域於X方向以一定間隔設置。進一步的,標記Ks2,在X方向相鄰之2個曝光區域A7間之空白區域中,設在Y方向之中央。 In FIG. 3, the marks Ks1 are arranged at a certain interval in the X direction in the peripheral area on the -Y side of the exposure area A7, and the marks Ks3 are arranged at a certain interval in the X direction in the peripheral area on the + Y side of the exposure area A7. Further, the mark Ks2 is set in the center of the Y direction in a blank area between two adjacent exposure areas A7 in the X direction.

標記Ks1,係以在對準顯微鏡AM1之對物透鏡系GA1之觀察區域Vw1內、及對準顯微鏡AM2之對物透鏡系GA之觀察區域Vw4內,於基板P之搬送期間能被依序捕捉之方式形成。又,標記Ks3,係以在對準顯微鏡AM1之對物透鏡系GA3之觀察區域Vw3內、及對準顯微鏡AM2之對物透鏡系GA之觀察區域Vw6內,於基板P之搬送期間能被依序捕捉之方式形成。進一步的,標記Ks2,係以分別在對準顯微鏡AM1之對物透鏡系GA2之觀察區域Vw2內、及對準顯微鏡AM2之對物透鏡系GA之觀察區域Vw5內,於基板P之搬送期間被依序捕捉之方式形成。 The mark Ks1 is within the observation area Vw1 of the objective lens GA1 of the alignment microscope AM1 and the observation area Vw4 of the objective lens GA of the alignment microscope AM2, and can be sequentially captured during the transfer of the substrate P Way of forming. The mark Ks3 is within the observation area Vw3 of the objective lens system GA3 of the alignment microscope AM1 and the observation area Vw6 of the objective lens system GA of the alignment microscope AM2. The order capture method is formed. Further, Ks2 is marked within the observation area Vw2 of the objective lens system GA2 of the alignment microscope AM1 and the observation area Vw5 of the objective lens system GA2 of the alignment microscope AM2, respectively, during the transfer of the substrate P. Formed in order to capture.

因此,3個對準顯微鏡AM1、AM2中之旋轉圓筒DR之Y 方向兩側之對準顯微鏡AM1、AM2,可隨時觀察或檢測形成在基板P之寬度方向兩側之標記Ks1、Ks3。此外,3個對準顯微鏡AM1、AM2中之旋轉圓筒DR之Y方向中央之對準顯微鏡AM1、AM2,可隨時觀察或檢測形成在形成在描繪於基板P上之曝光區域A7彼此間之空白部等之標記Ks2。 Therefore, the Y of the rotating cylinder DR in the three alignment microscopes AM1 and AM2 The alignment microscopes AM1 and AM2 on both sides of the direction can observe or detect the marks Ks1 and Ks3 formed on both sides in the width direction of the substrate P at any time. In addition, the three alignment microscopes AM1 and AM2 of the alignment microscopes AM1 and AM2 in the Y-direction center of the rotating cylinder DR among the alignment microscopes AM1 and AM2 can observe or detect the gaps between the exposure areas A7 formed on the substrate P at any time. The mark of the Ministry is Ks2.

此處,曝光裝置EX係所謂的多光束型描繪裝置,因此為了將以複數個描繪單元UW1~UW5之各描繪線LL1~LL5於基板P上描繪之複數個圖案彼此於Y方向適當的加以接合,用以將複數個描繪單元UW1~UW5之接合精度抑制在容許範圍內之校準是必須的。此外,對準顯微鏡AM1、AM2對複數個描繪單元UW1~UW5之各描繪線LL1~LL5之觀察區域Vw1~Vw6之相對位置關係,須以基準線管理加以精密的求出。為進行此基準線管理,亦須校準。 Here, since the exposure device EX is a so-called multi-beam type drawing device, a plurality of patterns drawn on the substrate P by the drawing lines LL1 to LL5 of the plurality of drawing units UW1 to UW5 are appropriately joined to each other in the Y direction. It is necessary to calibrate the joint accuracy of the plurality of drawing units UW1 ~ UW5 within the allowable range. In addition, the relative positional relationship of the alignment microscopes AM1 and AM2 to the observation areas Vw1 to Vw6 of the respective drawing lines LL1 to LL5 of the plurality of drawing units UW1 to UW5 must be accurately calculated with reference line management. For this baseline management, calibration is also required.

於用以確認複數個描繪單元UW1~UW5之接合精度的校準、用以進行對準顯微鏡AM1、AM2之基準線管理之校準中,須於支承基板P之旋轉圓筒DR外周面之至少一部設置基準標記或基準圖案。因此,如圖10所示,於曝光裝置EX,係使用在外周面設有基準標記或基準圖案之旋轉圓筒DR。 In the calibration for confirming the joint accuracy of the plurality of drawing units UW1 to UW5 and the calibration for the reference line management of the alignment microscopes AM1 and AM2, at least a part of the outer peripheral surface of the rotating cylinder DR supporting the substrate P must be Set a reference mark or reference pattern. Therefore, as shown in FIG. 10, the exposure device EX uses a rotating cylinder DR provided with a reference mark or a reference pattern on the outer peripheral surface.

旋轉圓筒DR於其外周面之兩端側,如圖3、圖9所示同樣形成有構成後述旋轉位置檢測機構14之一部分之標尺部GPa、GPb。又,旋轉圓筒DR,於標尺部GPa、GPb之內側,於全周刻設有由凹狀槽、或凸狀邊緣構成之寬度窄的限制帶CLa、CLb。基板P之Y方向寬度被設定為校該2條限制帶CLa、CLb之Y方向間隔小,基板P係在旋轉圓筒DR之外周面中、緊貼以限制帶CLa、CLb所夾之內側區域而被支承。 As shown in FIGS. 3 and 9, the rotating cylinder DR is formed with scale portions GPa and GPb constituting a part of a rotation position detecting mechanism 14 described later, as shown in FIGS. 3 and 9. In addition, the rotating cylinder DR is provided inside the scale portions GPa and GPb, and is provided with narrow-shaped restriction bands CLa and CLb composed of concave grooves or convex edges on the entire circumference. The width in the Y direction of the substrate P is set so that the Y-direction interval between the two restriction bands CLa and CLb is small. The substrate P is in the outer peripheral surface of the rotating cylinder DR and is closely attached to the inner region sandwiched by the restriction bands CLa and CLb. While being supported.

旋轉圓筒DR,在以限制帶CLa、CLb所夾之外周面,設有將相對旋轉中心線AX2以+45度傾斜之複數個線圖案RL1(線圖案)、與相對旋轉中心線AX2以-45度傾斜之複數個線圖案RL2(線圖案)以一定間距(週期)Pf1、Pf2重複刻設之網格狀的基準圖案(亦可利用為基準標記)RMP。又,線圖案RL1及線圖案RL2之寬度為LW。 The rotating cylinder DR is provided with a plurality of line patterns RL1 (line patterns) inclined to the rotation center line AX2 by +45 degrees on the outer peripheral surface sandwiched by the restriction bands CLa and CLb, and- A plurality of line patterns RL2 (line patterns) inclined at 45 degrees are repeatedly engraved into a grid-like reference pattern (also used as a reference mark) RMP at a certain pitch (period) Pf1, Pf2. The width of the line patterns RL1 and RL2 is LW.

基準圖案RMP,為避免在基板P與旋轉圓筒DR外周面之接觸部分產生摩擦力或基板P之張力等之變化,係全面均一之斜圖案(斜格子狀圖案)。又,線圖案RL1、RL2並不一定必須是傾斜45度,亦可以是將線圖案RL1作成與Y軸平行、線圖案RL2作成與X軸平行之縱橫的網格狀圖案。此外,不一定須使線圖案RL1、RL2以90度交叉,亦可使相鄰之2條線圖案RL1與相鄰之2條線圖案RL2所圍成之矩形區域,以成為正方形(或長方形)以外之菱形的角度使線圖案RL1、RL2交叉。 The reference pattern RMP is a uniform uniform oblique pattern (oblique grid pattern) in order to avoid changes in friction between the substrate P and the outer peripheral surface of the rotating cylinder DR or the tension of the substrate P. In addition, the line patterns RL1 and RL2 do not necessarily have to be inclined at 45 degrees, and the line pattern RL1 may be formed in a grid-like pattern in parallel with the Y axis and the line pattern RL2 in parallel with the X axis. In addition, it is not necessary to cross the line patterns RL1 and RL2 at 90 degrees, and a rectangular area surrounded by two adjacent line patterns RL1 and two adjacent line patterns RL2 may be made into a square (or rectangle). Lines RL1 and RL2 intersect at an angle other than the rhombus.

其次,參照圖3、圖4及圖9說明旋轉位置檢測機構14。如圖9所示,旋轉位置檢測機構14係以光學方式檢測旋轉圓筒DR之旋轉位置之物,可適用例如使用旋轉編碼器等之編碼器系統。旋轉位置檢測機構14係具有設在旋轉圓筒DR之兩端部之標尺部GPa、GPb、以及與標尺部GPa、GPb之各個對向之複數個編碼器讀頭EN1、EN2、EN3、EN4的移動測量裝置。圖4及圖9中,雖僅顯示與標尺部GPa對向之4個編碼器讀頭EN1、EN2、EN3、EN4,但在標尺部GPb亦同樣的有對向配置之編碼器讀頭EN1、EN2、EN3、EN4。旋轉位置檢測機構14,可檢測旋轉圓筒DR兩端部之偏移(於旋轉中心線AX2延伸之Y方向的微幅變位)的變位計YN1、YN2、YN3、YN4。 Next, the rotation position detection mechanism 14 will be described with reference to FIGS. 3, 4 and 9. As shown in FIG. 9, the rotational position detection mechanism 14 is an object that optically detects the rotational position of the rotary cylinder DR, and an encoder system using, for example, a rotary encoder can be applied. The rotation position detecting mechanism 14 is provided with a scale portion GPa and GPb provided at both ends of the rotating cylinder DR, and a plurality of encoder read heads EN1, EN2, EN3, and EN4 opposite to the scale portions GPa and GPb. Mobile measuring device. In Figs. 4 and 9, only the four encoder read heads EN1, EN2, EN3, and EN4 facing the scale portion GPa are shown, but the encoder read heads EN1, which are arranged in the same direction, are also provided in the scale portion GPb. EN2, EN3, EN4. The rotation position detecting mechanism 14 is a displacement meter YN1, YN2, YN3, and YN4 that can detect displacement (small displacement in the Y direction extending from the rotation center line AX2) of both ends of the rotation cylinder DR.

標尺部GPa、GPb之刻度,於旋轉圓筒DR之外周面周方向全體分別形成為環狀。標尺部GPa、GPb係於旋轉圓筒DR之外周面周方向以一定間距(例如20μm)刻設凹狀或凸狀之格子線的繞射光柵,構成為遞增(incremental)型標尺。因此,標尺部GPa、GPb繞著旋轉中心線AX2與旋轉圓筒DR一體旋轉。 The scales of the scale portions GPa and GPb are formed in a ring shape on the entire outer circumferential surface of the rotating cylinder DR. The scale portions GPa and GPb are diffraction gratings in which concave or convex grid lines are engraved at a certain pitch (for example, 20 μm) in the circumferential direction of the outer peripheral surface of the rotating cylinder DR, and are configured as incremental scales. Therefore, the scale portions GPa and GPb rotate integrally with the rotation cylinder DR around the rotation center line AX2.

基板P,係在避開旋轉圓筒DR兩端之標尺部GPa、GPb之內側、也就是說,捲繞在限制帶CLa、CLb之內側。若須有嚴格之配置關係時,係設定標尺部GPa、GPb之外周面、與捲繞在旋轉圓筒DR之基板P之部分之外周面成同一面(距中心線AX2同一半徑)。為達成此,將標尺部GPa、GPb之外周面,相對旋轉圓筒DR之基板捲繞用外周面,作成於徑方向高基板P之厚度分即可。因此,可將形成於旋轉圓筒DR之標尺部GPa、GPb之外周面,設定為與基板P之外周面大致同一半徑。從而,編碼器讀頭EN1、EN2、EN3、EN4,可在與捲繞於旋轉圓筒DR之基板P上之描繪面相同徑方向位置檢測標尺部GPa、GPb,縮小測量位置與處理位置因旋轉系之徑方向相異而產生之阿貝誤差。 The substrate P is inside the scale portions GPa and GPb avoiding both ends of the rotating cylinder DR, that is, it is wound inside the restriction bands CLa and CLb. If a strict arrangement relationship is required, the outer peripheral surface of the scale portion GPa and GPb and the outer peripheral surface of the portion of the substrate P wound around the rotating cylinder DR are set to be the same surface (the same radius from the center line AX2). In order to achieve this, the outer peripheral surface of the scale portion GPa and GPb may be made thicker in the radial direction with respect to the outer peripheral surface for substrate winding of the rotating cylinder DR to the substrate P. Therefore, the outer peripheral surface of the scale portions GPa and GPb formed in the rotating cylinder DR can be set to have substantially the same radius as the outer peripheral surface of the substrate P. Therefore, the encoder read heads EN1, EN2, EN3, and EN4 can detect the scale portions GPa and GPb in the same radial position as the drawing surface wound on the substrate P of the rotary cylinder DR, reducing the measurement position and processing position due to rotation. Abbe error caused by the different radial directions of the system.

編碼器讀頭EN1、EN2、EN3、EN4,從旋轉中心線AX2觀察係分別配置在標尺部GPa、GPb之周圍,於旋轉圓筒DR之周方向之不同位置。此編碼器讀頭EN1、EN2、EN3、EN4連接於控制部16。編碼器讀頭EN1、EN2、EN3、EN4朝標尺部GPa、GPb投射測量用光束,對其反射光束(繞射光)進行光電檢測,據以將對應標尺部GPa、GPb之周方向位置變化之檢測訊號(例如,具有90度相位差之2相訊號)輸出至控制部16。控制部16,藉由對該檢測訊號以未圖示之計數回路加以內挿進行數位處理, 即能以次微米之分解能力測量旋轉圓筒DR之角度變化、亦即,測量其外周面之周方向位置變化。控制部16,亦可從旋轉圓筒DR之角度變化測量基板P之搬送速度。 The encoder read heads EN1, EN2, EN3, and EN4 are respectively arranged around the scale portions GPa and GPb as viewed from the rotation center line AX2, at different positions in the circumferential direction of the rotating cylinder DR. The encoder read heads EN1, EN2, EN3, and EN4 are connected to the control unit 16. The encoder read heads EN1, EN2, EN3, and EN4 project measuring beams toward the GPa and GPb of the scale, and perform photoelectric detection on their reflected beams (diffracted light), thereby detecting changes in the circumferential position of the corresponding GPa and GPb of the scale. A signal (for example, a two-phase signal having a 90-degree phase difference) is output to the control section 16. The control unit 16 performs digital processing by interpolating the detection signal with a counting circuit (not shown). That is, the angular change of the rotating cylinder DR, that is, the circumferential position change of the outer peripheral surface thereof can be measured with the resolution of the sub-micron. The control unit 16 may also measure the transfer speed of the substrate P from the angle of the rotating cylinder DR.

又,如圖4及圖9所示,編碼器讀頭EN1係配置在設置方位線Le1上。設置方位線Le1,係於XZ面內,連結編碼器讀頭EN1之測量用光束對標尺部GPa(GPb)上之投射區域(讀取位置)與旋轉中心線AX2的線。又,如上所述,設置方位線Le1,係於XZ面內,連結描繪線LL1、LL3、LL5與旋轉中心線AX2之線。由以上可知,連結編碼器讀頭EN1之讀取位置與旋轉中心線AX2之線、與連結描繪線LL1、LL3、LL5與旋轉中心線AX2之線係相同方位線。 As shown in FIGS. 4 and 9, the encoder read head EN1 is disposed on the installation azimuth line Le1. The azimuth line Le1 is set in the XZ plane and is a line connecting the measurement beam of the encoder read head EN1 to the projection area (reading position) on the scale portion GPa (GPb) and the rotation center line AX2. In addition, as described above, the azimuth line Le1 is provided and is located in the XZ plane and connects the drawing lines LL1, LL3, and LL5 and the rotation center line AX2. As can be seen from the above, the line connecting the reading position of the encoder read head EN1 and the rotation center line AX2, and the line connecting the drawing lines LL1, LL3, LL5 and the rotation center line AX2 are the same azimuth line.

同樣的,如圖4及圖9所示,編碼器讀頭EN2係配置在設置方位線Le2上。設置方位線Le2,係於XZ面內,連結編碼器讀頭EN2之測量用光束對標尺部GPa(GPb)上之投射區域(讀取位置)與旋轉中心線AX2之線。又,如上所述,設置方位線Le2,係於XZ面內,連結描繪線LL2、LL4與旋轉中心線AX2之線。由以上可知,連結編碼器讀頭EN2之讀取位置與旋轉中心線AX2之線、與連結描繪線LL2、LL4與旋轉中心線AX2之線係相同方位線。 Similarly, as shown in FIG. 4 and FIG. 9, the encoder read head EN2 is arranged on the set azimuth line Le2. The azimuth line Le2 is set in the XZ plane and connects the measurement beam of the encoder read head EN2 to the projection area (reading position) on the scale part GPa (GPb) and the rotation center line AX2. In addition, as described above, the azimuth line Le2 is provided, which is located in the XZ plane, and connects the drawing line LL2, LL4 and the rotation center line AX2. As can be seen from the above, the line connecting the reading position of the encoder read head EN2 and the rotation center line AX2 and the line connecting the drawing lines LL2, LL4 and the rotation center line AX2 are the same azimuth line.

又,如圖4及圖9所示,編碼器讀頭EN3係配置在設置方位線Le3上。設置方位線Le3,係於XZ面內,連結編碼器讀頭EN3之測量用光束對標尺部GPa(GPb)上之投射區域(讀取位置)與旋轉中心線AX2之線。又,如上所述,設置方位線Le3,係於XZ面內,連結對準顯微鏡AM1對基板P之觀察區域Vw1~Vw3與旋轉中心線AX2之線。由以上可知,連 結編碼器讀頭EN3之讀取位置與旋轉中心線AX2之線、與連結對準顯微鏡AM1之觀察區域Vw1~Vw3與旋轉中心線AX2之線,在XZ面內觀察時係相同方位線。 As shown in FIGS. 4 and 9, the encoder read head EN3 is arranged on the installation azimuth line Le3. The azimuth line Le3 is set in the XZ plane and connects the measurement beam of the encoder read head EN3 to the projection area (reading position) on the scale part GPa (GPb) and the rotation center line AX2. In addition, as described above, the azimuth line Le3 is provided in the XZ plane, and connects the alignment microscope AM1 with the observation area Vw1 to Vw3 of the substrate P and the line of the rotation center line AX2. From the above, even The reading position of the encoder read head EN3 and the line of the rotation center line AX2, and the line connecting the observation area Vw1 to Vw3 of the alignment microscope AM1 and the rotation center line AX2 are the same azimuth line when viewed in the XZ plane.

同樣的,如圖4及圖9所示,編碼器讀頭EN4係配置在設置方位線Le4上。設置方位線Le4,係於XZ面內,連結編碼器讀頭EN4之測量用光束對標尺部GPa(GPb)上之投射區域(讀取位置)與旋轉中心線AX2之線。又,如上所述,設置方位線Le4,係於XZ面內,連結對準顯微鏡AM2對基板P之觀察區域Vw4~Vw6與旋轉中心線AX2之線。由以上可知,連結編碼器讀頭EN4之讀取位置與旋轉中心線AX2之線、與連結對準顯微鏡AM2之觀察區域Vw4~Vw6與旋轉中心線AX2之線,於XZ面內觀察時係相同方位線。 Similarly, as shown in FIG. 4 and FIG. 9, the encoder read head EN4 is arranged on the set azimuth line Le4. The azimuth line Le4 is set in the XZ plane and connects the measurement beam of the encoder read head EN4 to the projection area (reading position) on the scale portion GPa (GPb) and the rotation center line AX2. As described above, the azimuth line Le4 is provided in the XZ plane, and connects the alignment microscope AM2 with the observation area Vw4 to Vw6 of the substrate P to the line of the rotation center line AX2. As can be seen from the above, the line connecting the reading position of the encoder read head EN4 and the rotation centerline AX2, and the line connecting the observation area Vw4 ~ Vw6 of the alignment microscope AM2 and the rotation centerline AX2 are the same when viewed in the XZ plane. Bearing line.

將編碼器讀頭EN1、EN2、EN3、EN4之設置方位(以旋轉中心線AX2為之中心之在XZ面內的角度方向)以設置方位線Le1、Le2、Le3、Le4表示之情形時,如圖4所示,係將複數個描繪單元UW1~UW5及編碼器讀頭EN1、EN2配置成設置方位線Le1、Le2相對中心面p3成角度±θ°。設置方位線Le1與設置方位線Le2,係設置成編碼器讀頭EN1與編碼器讀頭EN2在標尺部GPa(GPb)之刻度周圍,空間上非干涉的狀態。 When setting the orientation of the encoder read heads EN1, EN2, EN3, EN4 (the angle direction in the XZ plane with the rotation center line AX2 as the center), set the orientation indicated by the orientation lines Le1, Le2, Le3, Le4, such as As shown in FIG. 4, the plurality of drawing units UW1 to UW5 and the encoder read heads EN1 and EN2 are arranged to set the azimuth lines Le1 and Le2 at an angle ± θ ° with respect to the center plane p3. The set azimuth line Le1 and the set azimuth line Le2 are set in a state where the encoder read head EN1 and the encoder read head EN2 are spatially non-interfering around the scale of the scale portion GPa (GPb).

變位計YN1、YN2、YN3、YN4,從旋轉中心線AX2觀察時分別配置在標尺部GPa或GPb之周圍,於旋轉圓筒DR周方向之不同位置。此變位計YN1、YN2、YN3、YN4連接於控制部16。 The displacement gauges YN1, YN2, YN3, and YN4 are respectively arranged around the scale portion GPa or GPb when viewed from the rotation center line AX2, at different positions in the circumferential direction of the rotating cylinder DR. The displacement gauges YN1, YN2, YN3, and YN4 are connected to the control unit 16.

變位計YN1、YN2、YN3、YN4,可藉由在與捲繞在旋轉圓筒DR之基板P上之描繪面盡可能於徑方向接近之位置進行變位檢測,縮小 阿貝誤差。變位計YN1、YN2、YN3、YN4,藉由朝旋轉圓筒DR兩端部之一方投射測量用光束,並對其反射光束(或繞射光)進行光電檢測,據以將對應旋轉圓筒DR兩端部之Y方向(基板P之寬度方向)之位置變化的檢測訊號輸出至控制部16。控制部16,藉由對該檢測訊號以未圖示之測量電路(計數電路或內挿電路等)進行數位處理,能以次微米之分解能力測量旋轉圓筒DR(及基板P)之Y方向之變位變化。控制部16,亦可從旋轉圓筒DR兩端部之一方之變化,測量旋轉圓筒DR之偏移旋轉。 The displacement gauges YN1, YN2, YN3, and YN4 can be reduced in size by performing displacement detection at positions as close to the drawing surface as possible on the drawing surface of the substrate P wound around the rotating cylinder DR. Abbe error. The displacement gauges YN1, YN2, YN3, and YN4 project the measurement beam toward one of the two ends of the rotating cylinder DR, and perform a photoelectric detection on the reflected beam (or the diffracted light) to thereby correspond to the corresponding rotating cylinder DR. The detection signals of the position change in the Y direction (the width direction of the substrate P) of the both end portions are output to the control portion 16. The control unit 16 can digitally process the detection signal with a measurement circuit (counter circuit or interpolation circuit, etc.) (not shown) to measure the Y direction of the rotating cylinder DR (and the substrate P) with a resolution of submicron. The change of position. The control unit 16 may also measure the offset rotation of the rotary cylinder DR from a change in one of both ends of the rotary cylinder DR.

變位計YN1、YN2、YN3、YN4,雖然4個中只要有1個即夠,但為了測量旋轉圓筒DR之偏移旋轉等,只要4個中有3個以上的話,即能掌握旋轉圓筒DR兩端部之一方之面移動(動態傾斜變化等)。又,若可由控制部16以對準顯微鏡AM1、AM2固定的測量基板P上之標記或圖案(或旋轉圓筒DR上之標記等)的話,亦可省略變位計YN1、YN2、YN3、YN4。 The displacement gauges YN1, YN2, YN3, and YN4, although only one of the four is sufficient, in order to measure the offset rotation of the rotating cylinder DR, etc., as long as there are three or more of the four, the rotation circle can be grasped One surface of both ends of the barrel DR moves (dynamic tilt change, etc.). In addition, if the marks or patterns on the measurement substrate P (or the marks on the rotating cylinder DR, etc.) fixed by the control unit 16 can be aligned with the microscopes AM1 and AM2, the displacement gauges YN1, YN2, YN3, and YN4 may be omitted. .

此處,控制部16,係以編碼器讀頭EN1、EN2檢測標尺部(旋轉圓筒DR)GPa、GPb之旋轉角度位置,根據所檢測之旋轉角度位置,進行使用奇數號及偶數號描繪單元UW1~UW5之描繪。也就是說,控制部16,在投射於基板P之描繪光束LB往掃描方向掃描之期間中,根據待描繪於基板P之圖案之CAD資訊進行光偏向器81之ON/OFF調變,但亦可將使用光偏向器81之ON/OFF調變之時序,根據所檢測之旋轉角度位置來進行,即能於基板P之光感應層上以良好精度描繪圖案。 Here, the control unit 16 uses the encoder read heads EN1 and EN2 to detect the rotation angle positions of the scale unit (rotary cylinder DR) GPa and GPb, and performs drawing units using odd and even numbers based on the detected rotation angle positions. Drawing of UW1 ~ UW5. That is, the control unit 16 performs ON / OFF adjustment of the light deflector 81 based on the CAD information of the pattern to be drawn on the substrate P while the drawing beam LB projected on the substrate P is scanning in the scanning direction, but also The timing of ON / OFF modulation using the light deflector 81 can be performed according to the detected rotation angle position, that is, a pattern can be drawn on the light sensing layer of the substrate P with good accuracy.

又,控制部16,可藉由儲存以對準顯微鏡AM1、AM2檢測基板P上之對準標記Ks1~Ks3時,以編碼器讀頭EN3、EN4檢測之標尺部 GPa、GPb(旋轉圓筒DR)之旋轉角度位置,能求出基板P上之對準標記Ks1~Ks3之位置與旋轉圓筒DR之旋轉角度位置的對應關係。同樣的,控制部16,藉由儲存以對準顯微鏡AM1、AM2檢測旋轉圓筒DR上之基準圖案RMP時,以編碼器讀頭EN3、EN4檢測之標尺部GPa、GPb(旋轉圓筒DR)之旋轉角度位置,能求出旋轉圓筒DR上之基準圖案RMP之位置與旋轉圓筒DR之旋轉角度位置的對應關係。如以上所述,對準顯微鏡AM1、AM2,可精密的測量於觀察區域Vw1~Vw6內,對標記進行取樣(sampling)之瞬間之旋轉圓筒DR之旋轉角度位置(或周方向位置)。於曝光裝置EX,即根據此測量結果,進行基板P與描繪於基板P上之既定圖案的對位(對準)、或旋轉圓筒DR與描繪裝置11之校準。 In addition, the control unit 16 can store the alignment marks Ks1 to Ks3 on the inspection substrate P by aligning the microscopes AM1 and AM2, and measure the encoders EN3 and EN4 to measure the scales. The rotation angle positions of GPa and GPb (rotating cylinder DR) can determine the correspondence between the positions of the alignment marks Ks1 to Ks3 on the substrate P and the rotation angle positions of the rotating cylinder DR. Similarly, the control unit 16 stores the reference patterns RMP on the rotating cylinder DR by aligning the microscopes AM1 and AM2, and the scale portions GPa and GPb (rotating cylinder DR) detected by the encoder read heads EN3 and EN4. For the rotation angle position, the correspondence relationship between the position of the reference pattern RMP on the rotation cylinder DR and the rotation angle position of the rotation cylinder DR can be obtained. As described above, the alignment microscopes AM1 and AM2 can accurately measure the rotation angle position (or the circumferential position) of the rotating cylinder DR at the moment of sampling the mark in the observation areas Vw1 to Vw6. In the exposure device EX, the alignment (alignment) of the substrate P with a predetermined pattern drawn on the substrate P, or the calibration of the rotating cylinder DR and the drawing device 11 is performed based on the measurement result.

又,實際之取樣,係在以編碼器讀頭EN3、EN4測量之旋轉圓筒DR之旋轉角度位置,成為與預先大略獲知之基板P上之標記或旋轉圓筒DR上之基準圖案RMP之位置對應的角度位置時,即將從對準顯微鏡AM1、AM2之各攝影系GD輸出之影像資訊高速的寫入影像記憶體等據以進行。亦即,係以編碼器讀頭EN3、EN4測量之旋轉圓筒DR之旋轉角度位置為觸發(trigger),對從各攝影系GD輸出之影像資訊進行取樣。又,與此不同的,亦有回應一定頻率之時脈訊號之各脈衝,對以編碼器讀頭EN3、EN4測量之旋轉圓筒DR之旋轉角度位置(計數測量值)與從各攝影系GD輸出之影像資訊同時進行取樣的方法。 In addition, the actual sampling is at the position of the rotation angle of the rotating cylinder DR measured by the encoder read heads EN3 and EN4, and becomes the position of the mark on the substrate P or the reference pattern RMP on the rotating cylinder DR, which is roughly known in advance. At the corresponding angular position, the image information output from the GD of each of the photography systems G1 and AM2 of the alignment microscope is written into the image memory at a high speed. That is, the rotation angle position of the rotating cylinder DR measured by the encoder read heads EN3 and EN4 is used as a trigger to sample the image information output from each photography system GD. In addition, different from this, there are pulses that respond to clock signals of a certain frequency. The rotation angle position (counting measurement value) of the rotating cylinder DR measured by the encoder read heads EN3 and EN4 and the GD from each photography department. The method of sampling the output image information at the same time.

又,基板P上之標記及旋轉圓筒DR上之基準圖案RMP,由於係相對觀察區域Vw1~Vw6移動於一方向,於從各攝影系GD輸出之影像資訊之取樣時,作為CCD或CMOS之攝影元件以使用快門速度快者較 佳。隨此,亦須提升照明觀察區域Vw1~Vw6之照明光之輝度,作為對準顯微鏡AM1、AM2之照明光源,亦可考慮使用閃光燈或高輝度LED等。 In addition, the mark on the substrate P and the reference pattern RMP on the rotating cylinder DR are moved in one direction relative to the observation areas Vw1 to Vw6, and are used as the CCD or CMOS when sampling the image information output from each photography system GD. The photographic element uses the faster shutter speed. good. With this, the brightness of the illumination light in the illumination observation areas Vw1 ~ Vw6 must also be increased. As an illumination light source for the alignment microscopes AM1 and AM2, a flash or high-brightness LED can also be considered.

圖11係顯示在基板上之描繪線與描繪圖案之位置關係的說明圖。描繪單元UW1~UW5,藉由沿著描繪線LL1~LL5掃描描繪光束LB之點光,據以描繪圖案PT1~PT5。描繪線LL1~LL5之描繪開始位置OC1~OC5為圖案PT1~PT5之描繪始端PTa。描繪線LL1~LL5之描繪結束位置EC1~EC5為圖案PT1~PT5之描繪終端PTb。 11 is an explanatory diagram showing a positional relationship between a drawing line and a drawing pattern on a substrate. The drawing units UW1 to UW5 scan the spot light of the drawing beam LB along the drawing lines LL1 to LL5, and thereby draw the patterns PT1 to PT5. The drawing start positions OC1 to OC5 of the drawing lines LL1 to LL5 are the drawing start points PTa of the patterns PT1 to PT5. The drawing end positions EC1 to EC5 of the drawing lines LL1 to LL5 are the drawing terminals PTb of the patterns PT1 to PT5.

圖案PT1之描繪始端PTa、描繪終端PTb中之描繪終端PTb與圖案PT2之描繪終端PTb接合。同樣的,圖案PT2之描繪始端PTa與圖案PT3之描繪始端PTa接合、圖案PT3之描繪終端PTb與圖案PT4之描繪終端PTb接合、圖案PT4之描繪始端PTa與圖案PT5之描繪始端PTa接合。如此,描繪於基板P上之圖案PT1~PT5彼此即隨著基板P往長條方向之移動而於基板P之寬度方向接合,於大的曝光區域A7全體描繪出元件圖案。 The drawing start point PTa of the pattern PT1 and the drawing terminal PTb of the drawing terminal PTb are joined to the drawing terminal PTb of the pattern PT2. Similarly, the drawing start point PTa of the pattern PT2 is joined to the drawing start point PTa of the pattern PT3, the drawing terminal PTb of the pattern PT3 is connected to the drawing terminal PTb of the pattern PT4, and the drawing start point PTa of the pattern PT4 is connected to the drawing start point PTa of the pattern PT5. In this way, the patterns PT1 to PT5 drawn on the substrate P are bonded to each other in the width direction of the substrate P as the substrate P moves in the long direction, and an element pattern is drawn in the entire large exposure area A7.

圖12係顯示描繪光束之點光與描繪線之關係的說明圖。描繪單元UW1~UW5中,代表性的說明描繪單元UW1及UW2之描繪線LL1及LL2。由於描繪單元UW3~UW5之描繪線LL3~LL5亦相同,因此省略其說明。旋藉由轉多面鏡97之等速旋轉,描繪光束LB之光束點光SP即沿著基板P上之描繪線LL1及LL2,掃描從描繪開始位置OC1、OC2至描繪結束位置EC1、EC2之描繪線之長度LBL。 FIG. 12 is an explanatory diagram showing a relationship between a point light for drawing a light beam and a drawing line. Among the drawing units UW1 to UW5, the drawing lines LL1 and LL2 of the drawing units UW1 and UW2 are representatively explained. Since the drawing lines LL3 to LL5 of the drawing units UW3 to UW5 are also the same, the description thereof is omitted. By rotating the polygon mirror 97 at a constant speed, the beam spot light SP of the drawing beam LB is drawn along the drawing lines LL1 and LL2 on the substrate P, and the drawing from the drawing start position OC1, OC2 to the drawing end position EC1, EC2 is scanned. The length of the line LBL.

一般來說,於直接描曝光方式,即使是裝置在描繪可曝光之最小尺寸之圖案時,亦係以複數個點光SP之多重曝光(多重寫入)來實現高精度且安定之圖案描繪。如圖12所示,設於描繪線LL1及LL2上,點光 SP之實效直徑為Xs時,由於描繪光束LB為脈衝光,因此以1個脈衝光(微微秒級之發光時間)生成之點光SP與下1個脈衝光生成之點光SP,係以直徑Xs之約1/2距離CXs於Y方向(主掃描方向)重疊之方式進行掃描。 Generally, in the direct-exposure exposure method, even when the device draws a pattern of the smallest size that can be exposed, it uses a multiple exposure (multiple writing) of a plurality of spot lights SP to achieve high-precision and stable pattern drawing. As shown in FIG. 12, light is set on the drawing lines LL1 and LL2 When the effective diameter of SP is Xs, since the drawing light beam LB is pulsed light, the point light SP generated by one pulse light (emission time of picosecond order) and the point light SP generated by the next pulse light are based on diameter. The Xs is scanned at a distance of about 1/2 of the CXs in the Y direction (main scanning direction).

又,與沿各描繪線LL1、LL2之點光SP之主掃描同時,基板P以一定速度被搬送向+X方向,因此各描繪線LL1、LL2於基板P上往X方向以一定間距移動(副掃描)。該間距,此處亦係設定為點光SP之直徑Xs之約1/2距離CXs,但不限於此。據此,於副掃描方向(X方向)亦係以直徑Xs之1/2(或除此以外之重疊距離亦可)距離CXs於X方向相鄰之點光SP彼此重疊曝光。進一步的,以在描繪線LL1之描繪結束位置EC1撃發之光束點光SP與在描繪線LL2之描繪結束位置EC2撃發之光束點光SP,隨著基板P往長條方向之移動(即副掃描)於基板P之寬度方向(Y方向)以重疊距離CXs接合之方式,設定描繪線LL1之描繪開始位置OC1與描繪結束位置EC1、及描繪線LL2之描繪開始位置OC2與描繪結束位置EC2。 In addition, at the same time as the main scanning of the spot light SP along the respective drawing lines LL1 and LL2, the substrate P is transported at a constant speed in the + X direction. Therefore, each of the drawing lines LL1 and LL2 moves on the substrate P at a certain distance in the X direction ( Secondary scan). This distance is also set here as about 1/2 distance CXs of the diameter Xs of the spot light SP, but is not limited thereto. Accordingly, in the sub-scanning direction (X direction), the spot lights SP adjacent to each other in the X direction at a distance of 1/2 of the diameter Xs (or other overlapping distances may be used) are overlapped and exposed. Further, the beam spot light SP emitted at the drawing end position EC1 of the drawing line LL1 and the beam spot light SP emitted at the drawing end position EC2 of the drawing line LL2 are moved along the substrate P in a long direction (that is, (Sub-scan) Set the drawing start position OC1 and the drawing end position EC1 of the drawing line LL1 and the drawing start position OC2 and the drawing end position EC2 of the drawing line LL1 in such a manner that the width direction (Y direction) of the substrate P is joined with the overlapping distance CXs. .

例如,當設光束點光SP之實效直徑Xs為4μm時,能良好的曝光出以點光SP之2列×2行(於主掃描與副掃描之兩方向重疊排排列之合計4個點光)占有之面積、或以3列×3行(於主掃描與副掃描之兩方向重疊排列之合計9個點光)占有之面積為最小尺寸的圖案,亦即最小尺寸為6μm~8μm程度之線寬度的圖案。又,當使旋轉多面鏡97之反射面97b為10面、繞旋轉軸97a之旋轉多面鏡97之旋轉速度為1萬rpm以上時,可使藉由旋轉多面鏡97在描繪線(LL1~LL5)上之點光SP(描繪光束LB)之掃描次數(設係掃描頻率Fms)為1666.66…Hz以上。此係代表可在基板 P上於每1秒之搬送方向(X方向)描繪1666條以上之描繪線分之圖案。因此,若基板P每一秒之搬送距離(搬送速度)變慢,則點光彼此在副掃描方向(X方向)之重疊距離CXs可設定在點光之直徑Xs之1/2以下之值,例如1/3、1/4、1/5、…,此情形,藉由點光沿著描繪線之複數次掃描使相同描繪圖案曝光,能使賦予基板P之感光層之曝光量增加。 For example, when the effective diameter Xs of the beam spot light SP is set to 4 μm, a total of 4 spot lights with 2 columns × 2 rows of the spot light SP (overlapping in the two directions of the main scanning and the sub-scanning) can be well exposed. ) Occupied area, or a pattern with a minimum size of 3 columns × 3 rows (a total of 9 spot lights arranged in the two directions of the main scan and the sub scan), that is, a minimum size of about 6 μm to 8 μm Line width pattern. When the reflecting surface 97b of the rotating polygon mirror 97 is 10 planes, and the rotation speed of the rotating polygon mirror 97 around the rotation axis 97a is 10,000 rpm or more, the drawing line (LL1 ~ LL5) by the rotating polygon mirror 97 can be made. The number of scanning times of the spot light SP (drawing beam LB) (set the scanning frequency Fms) is 1666.66 ... Hz or more. This department represents On P, a pattern of 1666 or more drawing lines is drawn in the conveying direction (X direction) every 1 second. Therefore, if the conveying distance (conveying speed) of the substrate P per second becomes slow, the overlapping distance CXs of the spot lights in the sub-scanning direction (X direction) can be set to a value less than 1/2 of the spot light's diameter Xs. For example, 1/3, 1/4, 1/5, .... In this case, the same drawing pattern is exposed by multiple scanning of the point light along the drawing line, which can increase the exposure of the photosensitive layer provided to the substrate P.

又,藉由旋轉圓筒DR之旋轉驅動之基板P之搬送速度為5mm/s程度時,可將圖12所示之描繪線LL1(LL2~LL5亦相同)之X方向(基板P之搬送方向)之間距(距離CXs)作成約3μm程度。 In addition, when the transfer speed of the substrate P driven by the rotation of the rotary cylinder DR is about 5 mm / s, the X direction of the drawing line LL1 (the same is true for LL2 to LL5) shown in FIG. 12 (the transfer direction of the substrate P) The distance (distance CXs) is about 3 μm.

本實施形態之場合,於主掃描方向(Y方向)之圖案描繪之分解能力R,係由點光SP之實效直徑Xs與掃描頻率Fms,與構成光偏向器81之聲光元件(AOM)之ON/OFF最小切換時間來決定。作為聲光元件(AOM),使用最高回應頻率Fss=50MHz者時,可使ON狀態與OFF狀態之各時間為20nS程度。再者,由於藉由旋轉多面鏡97之1個反射面97b之描繪光束LB之實效掃描期間(描繪線之長度LBL分之點光掃描),係1個反射面97b之旋轉角度分之1/3程度,因此當將描繪線之長度LBL設為30mm時,依存於光偏向器81之切換時間之決定之分解能力R,即為R=LBL/(1/3)/(1/Fms)×(1/Fss)≒3μm。 In the case of this embodiment, the resolution R of the pattern drawing in the main scanning direction (Y direction) is determined by the effective diameter Xs of the spot light SP and the scanning frequency Fms, and the acousto-optic element (AOM) constituting the light deflector 81. Determine the minimum ON / OFF switching time. As an acousto-optic element (AOM), when the highest response frequency Fss = 50MHz is used, the time between the ON state and the OFF state can be approximately 20nS. Furthermore, since the effective scanning period of the drawing beam LB by rotating the reflective surface 97b of the polygon mirror 97 (point light scanning by the length of the drawing line LBL), it is 1/1/1 of the rotation angle of the reflecting surface 97b. 3 degree, so when the length LBL of the drawing line is set to 30mm, the resolution R depends on the switching time of the light deflector 81, which is R = LBL / (1/3) / (1 / Fms) × (1 / Fss) ≒ 3 μm.

從此關係式,為提升圖案描繪之分解能力R,例如作為光偏向器81之聲光元件(AOM)使用最高回應頻率Fss為100MHz者,並將ON/OFF之切換時間設定為10nsec。據此,分解能力R即成為一半之1.5μm。此場合,係使基板P藉由旋轉圓筒DR之旋轉之搬送速度為一半。作為提升分解能力R之其他方法,例如亦可提高旋轉多面鏡97之旋轉速度。 From this relationship, in order to improve the resolution R of the pattern drawing, for example, the acousto-optic element (AOM) of the light deflector 81 uses the highest response frequency Fss of 100 MHz, and the ON / OFF switching time is set to 10 nsec. According to this, the resolution R becomes half of 1.5 μm. In this case, the transfer speed of the substrate P by the rotation of the rotary cylinder DR is set to half. As another method for improving the resolution R, for example, the rotation speed of the rotary polygon mirror 97 may be increased.

一般來說,於微影製程中使用之光阻劑,係使用光阻感度Sr約為30mj/cm2程度之物。設光學系之穿透率ΔTs為0.5(50%)、在旋轉多面鏡97之1個反射面97b中之實效掃描期間為1/3程度、描繪線之長度LBL為30mm、描繪單元UW1~UW5之數Nuw為5、旋轉圓筒DR之基板P之搬送速度Vp為5mm/s(300mm/min)的話,光源裝置CNT所需之雷射功率Pw,可由次式加以預估。 Generally, the photoresist used in the lithography process is a photoresist having a sensitivity Sr of about 30 mj / cm 2 . Let the transmittance ΔTs of the optical system be 0.5 (50%), the effective scanning period in one reflective surface 97b of the rotating polygon mirror 97 is 1/3 degree, the length of the drawing line LBL is 30mm, and the drawing units UW1 to UW5 If the number Nuw is 5, and the transfer speed Vp of the substrate P of the rotating cylinder DR is 5 mm / s (300 mm / min), the laser power Pw required by the light source device CNT can be estimated by the following formula.

Pw=30/60×3×30×5/0.5/(1/3)=1350mW Pw = 30/60 × 3 × 30 × 5 / 0.5 / (1/3) = 1350mW

假設,描繪單元為7個時,光源裝置CNT所需之雷射功率Pw,如次式。 It is assumed that when there are seven drawing units, the laser power Pw required by the light source device CNT is as follows.

Pw=30/60×3×30×7/0.5/(1/3)=1890mW Pw = 30/60 × 3 × 30 × 7 / 0.5 / (1/3) = 1890mW

例如,若光阻感度為80mj/cm2程度的話,為以相同速度進行曝光,作為光束輸出需有3~5W程度之光源裝置CNT。取代此種高功率光源之使用,若使基板P藉由旋轉圓筒DR之旋轉之搬送速度Vp相對初期值之5mm/s降低至30/80的話,作為光束輸出亦可使用1.4~1.9W程度之光源裝置進行曝光。 For example, if the photoresistance is about 80 mj / cm 2 , in order to perform exposure at the same speed, a light source device CNT of about 3 to 5 W is required as the beam output. Instead of using such a high-power light source, if the conveying speed Vp of the substrate P by the rotation of the rotating cylinder DR is reduced from 5mm / s to 30/80 from the initial value, the beam output can also be used from 1.4 to 1.9W. Light source device for exposure.

又,若設描繪線之長度LBL為30mm,並假設光束點光SP之點直徑Xs、與光偏向器81之聲光元件(AOM)之光切換所決定之分解能力(指定光束位置之最小格(grid),相當於1像素)Xg相等,皆為3μm時,設10面旋轉多面鏡97之旋轉速度為1萬rpm時之旋轉多面鏡97之1旋轉之時間為3/500秒、旋轉多面鏡97之1個反射面97b之實效掃描期間為1個反射面97b之旋轉角度分之1/3時,1個反射面97b之實效掃描時間Ts(秒)即可以(3/500)×(1/10)×(1/3)求出,約為Ts=1/5000 (秒)。據此,光源裝置CNT為脈衝雷射時之脈衝發光頻率Fz,即可以Fz=LBL/(Ts‧Xs)求出,Fz=50MHz為最低頻率。從而,於實施形態,即需要輸出頻率50MHz以上之脈衝雷射的光源裝置CNT。有鑑於此,光源裝置CNT之衝發光頻率Fz,最好是光偏向器81之聲光元件(AOM)之最高回應頻率Fss(例如50MHz)的2倍以上(例如100MHz)。 In addition, if the length LBL of the drawn line is 30 mm, and the point diameter Xs of the beam spot light SP and the light switching between the acousto-optic element (AOM) of the light deflector 81 and the light-decomposing capacity are determined (the minimum grid for specifying the beam position) (grid), equivalent to 1 pixel. When Xg is equal to 3 μm, set the rotation speed of the 10-face rotating polygon mirror 97 to 10,000 rpm. The time of 1 rotation of the rotating polygon mirror 97 is 3/500 seconds. When the effective scanning period of one reflecting surface 97b of the mirror 97 is 1/3 of the rotation angle of one reflecting surface 97b, the effective scanning time Ts (second) of one reflecting surface 97b is (3/500) × ( 1/10) × (1/3), it is about Ts = 1/5000 (second). According to this, the pulse emission frequency Fz when the light source device CNT is a pulsed laser can be obtained by Fz = LBL / (Ts‧Xs), and Fz = 50MHz is the lowest frequency. Therefore, in the embodiment, a light source device CNT that outputs a pulse laser with a frequency of 50 MHz or more is required. In view of this, the light emission frequency Fz of the light source device CNT is preferably more than twice (for example, 100 MHz) the highest response frequency Fss (for example, 50 MHz) of the acousto-optic element (AOM) of the light deflector 81.

進一步的,將光偏向器81之聲光元件(AOM)切換為ON狀態/OFF狀態之驅動訊號,為避免聲光元件(AOM)從ON狀態遷移至OFF狀態之期間、或從OFF狀態遷移至ON狀態之期間產生脈衝發光,最好是進行使光源裝置CNT與以脈衝發光頻率Fz振盪之時脈訊號同步的控制。 Further, the driving signal for switching the acousto-optic element (AOM) of the light deflector 81 to the ON state / OFF state is to prevent the acousto-optic element (AOM) from transitioning from the ON state to the OFF state, or from the OFF state to the It is preferable to perform control to synchronize the light source device CNT with the clock signal oscillating at the pulse light emission frequency Fz during the ON state.

其次,將光束點光SP之點直徑Xs與光源裝置CNT之脈衝發光頻率Fz之關係,從光束形狀(重疊的2個點光SP之強度分布)之觀點,使用圖13之圖表加以說明。圖13之橫軸係代表點光SP在沿描繪線之Y方向、或沿基板P之搬送方向之X方向的描繪位置、或點光SP之尺寸,縱軸係代表將單獨點光SP之峰值強度規格化為1.0之相對強度值。又,此處,係設單獨點光SP之強度分布為J1,假定為高斯分布來加以說明。 Next, the relationship between the spot diameter Xs of the beam spot light SP and the pulse light emission frequency Fz of the light source device CNT will be described from the viewpoint of the beam shape (the intensity distribution of the two spot lights SP overlapping) using the graph in FIG. 13. The horizontal axis of FIG. 13 represents the position of the spot light SP in the Y direction along the drawing line, or the X direction of the substrate P in the transport direction, or the size of the spot light SP. The vertical axis represents the peak value of the spot light SP. The intensity is normalized to a relative intensity value of 1.0. Here, it is assumed that the intensity distribution of the individual spot light SP is J1, and a Gaussian distribution is used for explanation.

圖13中,單獨點光SP之強度分布J1,係設相對峰值強度以1/e2之強度具有3μm之直徑。強度分布J2~J6,係顯示將此種點光SP之2脈衝分,於主掃描方向或副掃描方向錯開位置照射時於基板P上所得之積算的強度分布(輪廓)之模擬結果,分別係使位置之錯開量(間隔距離)不同者。 In FIG. 13, the intensity distribution J1 of the individual spot light SP is set to have a diameter of 3 μm at a relative peak intensity of 1 / e 2 . The intensity distributions J2 to J6 are simulation results showing the integrated intensity distribution (contour) obtained on the substrate P when the two pulses of the spot light SP are irradiated at staggered positions in the main scanning direction or the sub-scanning direction, respectively. Make the position shift amount (distance distance) different.

圖13之圖表中,強度分布J5係顯示2脈衝分之點光SP錯 開與直徑3μm相同之間隔距離之情形,強度分布J4為2脈衝分之點光SP之間隔距離為2.25μm之情形、強度分布J3為2脈衝分之點光SP之間隔距離為1.5μm之情形。由此強度分布J3~J5之變化明顯可知,於強度分布J5,直徑3μm之點光SP以3μm間隔照射之條件之情形時,積算之輪廓,為2個點光各個之中心位置最高的瘤狀,於2個點光之中點位置,規格化強度僅能獲得0.3程度。相對於此,直徑3μm之點光SP以1.5μm間隔照射之條件時積算之輪廓,於輪廓中明顯之瘤狀分布,夾著2個點光之中點位置大致平坦。 In the graph of FIG. 13, the intensity distribution J5 shows a point SP error of 2 pulses In the case of opening the same separation distance as the diameter of 3 μm, the case where the intensity distribution J4 is 2 points of 2 pulses of light SP is 2.25 μm, the case of the intensity distribution J3 is 2 points of 2 pulses of light SP is 1.5 μm . From the changes in the intensity distribution J3 to J5, it can be clearly seen that in the case of the intensity distribution J5 and the point light SP with a diameter of 3 μm is irradiated at 3 μm intervals, the accumulated outline is the highest tumor shape at the center of each of the two point lights. At the mid-point position of the 2 spot lights, the normalized intensity can only obtain 0.3 degrees. On the other hand, when the spot light SP with a diameter of 3 μm is irradiated at an interval of 1.5 μm, the outline calculated when the spot light SP is radiated has a clear nodular distribution in the outline, and the positions of the dots between the two spot lights are substantially flat.

又,圖13中,強度分布J2係顯示將2脈衝分之點光SP之間隔距離設為0.75μm時之積算輪廓,強度分布J6係將間隔距離設定為單獨點光SP之強度分布J1之半值全寬度(FWHM)1.78μm時之積算輪廓。 In addition, in FIG. 13, the intensity distribution J2 is an integrated profile when the interval distance of the two-pulse point light SP is set to 0.75 μm, and the intensity distribution J6 is the interval distance set to half of the intensity distribution J1 of the individual point light SP. The integrated profile at the full width (FWHM) of 1.78 μm.

如以上所述,在以較點光SP之直徑Xs相同間隔短之間隔距離CXs照射2個點光之脈衝振盪之條件時,由於易顯著出現2個瘤狀分布,因此,最好是設定為曝光時不會產生強度不均(描繪精度之劣化)的最佳間隔距離。如圖13之強度分布J3或J6般,以單一點光SP之直徑Xs之一半程度(例如40~60%)之間隔距離CXs重疊較佳。此種最佳間隔距離CXs,於主掃描方向,可藉由調整光源裝置CNT之脈衝發光頻率Fz、與沿描繪線之點光SP之掃描速度或掃描時間Ts(旋轉多面鏡97之旋轉速度)至少一方來加以設定,於副掃描方向,可藉由調整描繪線之掃描頻率Fms(旋轉多面鏡97之旋轉速度)與基板P之X方向移動速度中之至少一方來加以設定。 As described above, under the condition that the pulse oscillation of two spot lights is irradiated at the same distance as the diameter Xs of the spot light SP and the short distance CXs, two tumor-like distributions tend to appear significantly, so it is best to set it as Optimal separation distance without causing uneven intensity (deterioration of drawing accuracy) during exposure. As shown in the intensity distribution J3 or J6 of FIG. 13, it is better to overlap the distance CXs at a half degree (for example, 40 to 60%) of the diameter Xs of the single spot light SP. This optimal separation distance CXs can be adjusted in the main scanning direction by the pulse light emission frequency Fz of the light source device CNT and the scanning speed or scanning time Ts of the point light SP along the drawing line (the rotational speed of the rotating polygon mirror 97) At least one is set, and in the sub-scanning direction, it can be set by adjusting at least one of the scanning frequency Fms (the rotation speed of the rotary polygon mirror 97) and the X-direction moving speed of the substrate P in the drawing line.

例如,在無法高精度調整旋轉多面鏡97之旋轉速度絶對值 (點光之掃描時間Ts)之情形時,藉由微調整光源裝置CNT之脈衝發光頻率Fz,可將於主掃描方向之點光SP之間隔距離CXs與點光之直徑Xs(尺寸)之比率,調整至最佳範圍。 For example, the absolute value of the rotation speed of the rotating polygon mirror 97 cannot be adjusted with high accuracy. (Scanning time Ts of the point light), by finely adjusting the pulse light emission frequency Fz of the light source device CNT, the ratio of the distance CXs between the point light SP in the main scanning direction and the diameter Xs (size) of the point light can be adjusted. And adjust to the best range.

如以上所述,在使2個點光SP於掃描方向重疊時,亦即,Xs>CXs時,光源裝置CNT係將脈衝發光頻率Fz設定為Fz>LBL/(Ts‧Xs)之關係,滿足Fz=LBL/(Ts‧CXs)之關係。例如,光源裝置CNT之脈衝發光頻率Fz為100MHz時,設旋轉多面鏡97為10面而以1萬rpm旋轉時,以1/e2、或半值全寬度(FWHM)規定之點光之實效直徑Xs為3μm,可將來自各描繪單元UW1~UW5之脈衝雷射光束(點光),於各描繪線LL1~LL5上以直徑Xs之約一半之1.5μm間隔(CXs)照射。據此,圖案描繪時之曝光量均勻性獲得提升,即便是微細圖案亦能獲得基於描繪資料之忠實的曝光像(光阻像),達成高精度的描繪。 As described above, when the two spot lights SP are overlapped in the scanning direction, that is, when Xs> CXs, the light source device CNT sets the relationship between the pulse light emission frequency Fz and Fz> LBL / (Ts‧Xs) to satisfy Fz = LBL / (Ts‧CXs). For example, when the pulsed light emission frequency Fz of the light source device CNT is 100 MHz, when the rotating polygon mirror 97 is set to 10 surfaces and rotated at 10,000 rpm, the effect of the point light specified by 1 / e 2 or full width at half maximum (FWHM) The diameter Xs is 3 μm, and a pulsed laser beam (spot light) from each of the drawing units UW1 to UW5 can be irradiated on each of the drawing lines LL1 to LL5 at intervals of about 1.5 μm (CXs), which is about half the diameter Xs. According to this, the uniformity of the exposure amount during pattern drawing is improved, and even a fine pattern can obtain a faithful exposure image (photoresist image) based on drawing data, thereby achieving high-precision drawing.

進一步的,以聲光元件(AOM)之光切換速度決定之分解能力(最高回應頻率Fss)與光源裝置CNT之脈衝振盪頻率Fz,若設h為任意整數時,必須是換算為位置或時間後整數倍之關係,亦即必須是Fz=h‧Fss之關係。此係由於為避免聲光元件(AOM)之光切換時序,在從光源裝置CNT發出脈衝光束之中進行ON/OFF。 Further, the decomposition capability (the highest response frequency Fss) determined by the light switching speed of the acousto-optic element (AOM) and the pulse oscillation frequency Fz of the light source device CNT, if h is an arbitrary integer, it must be converted into position or time The integer multiple relationship must be the relationship of Fz = h‧Fss. This is to prevent the light switching timing of the acousto-optic element (AOM) from being turned on / off during the pulsed beam emitted from the light source device CNT.

第1實施形態之曝光裝置EX,由於係使用將光纖增幅器FB1、FB2與波長轉換部CU2之波長轉換元件加以組合之脈衝雷射光源之光源裝置CNT,因此於紫外波長帶(400~300nm),容易地得到此種具有高振盪頻率之脈衝光。 The exposure device EX of the first embodiment is a light source device CNT using a pulsed laser light source combining a fiber amplifier FB1, FB2 and a wavelength conversion element of the wavelength conversion unit CU2, so it is in the ultraviolet wavelength band (400 to 300 nm). It is easy to obtain such pulsed light with high oscillation frequency.

此外,聲光元件(AOM)之光切換,係根據將待描繪圖案 分割成例如3μm×3μm之像素單位、以「0」、「1」表示是否對各像素單位照射脈衝束之點光之位元列(描繪資料)進行。描繪線之長度LBL為30mm之情形,點光之一次掃描中之像素數成為一萬像素,聲光元件(AOM)具備在掃描時間Ts之期間切換一萬像素量之位元列之回應性(回應頻率Fss)。另一方面,主掃描方向之相鄰點光彼此,例如以重疊直徑Xs之1/2程度之方式設定脈衝振盪頻率Fz。因此,在上述關係式Fz=h‧Fss,以整數h為2以上、亦即Fz>Fss之方式設定脈衝振盪頻率Fz與聲光元件(AOM)之光切換之回應頻率Fss之關係較佳。 In addition, the light switching of the acousto-optic element (AOM) is based on the pattern to be drawn. Dividing is performed, for example, in a pixel unit of 3 μm × 3 μm, and “0” and “1” are used to indicate whether or not each pixel unit is irradiated with a bit string (drawing data) of a pulse beam. When the length LBL of the drawing line is 30mm, the number of pixels in one scan of the point light becomes 10,000 pixels, and the acousto-optical element (AOM) has the responsiveness to switch the bit array of 10,000 pixels during the scanning time Ts ( Response frequency Fss). On the other hand, the adjacent point lights in the main scanning direction set the pulse oscillation frequency Fz to each other, for example, so as to overlap the diameter Xs by about 1/2. Therefore, in the above-mentioned relational expression Fz = h‧Fss, the relationship between setting the pulse oscillation frequency Fz and the response frequency Fss of the light switching of the acousto-optic element (AOM) is better with the integer h being 2 or more, that is, Fz> Fss.

其次,說明曝光裝置EX之描繪裝置11之調整方法。圖14係關於第1實施形態之曝光裝置之調整方法的流程圖。圖15係以示意方式顯示旋轉圓筒之基準圖案與描繪線之關係的說明圖。圖16係以示意方式顯示從將來自旋轉圓筒之基準圖案之反射光於亮視野受光之光電感測器輸出之訊號的說明圖。控制部16,為進行掌握複數個描繪單元UW1~UW5之位置關係的校準,如圖15所示,使旋轉圓筒DR旋轉。旋轉圓筒DR,可搬送描繪光束LB可穿透程度之具透光性的基板P。 Next, a method of adjusting the drawing device 11 of the exposure device EX will be described. FIG. 14 is a flowchart of a method of adjusting the exposure apparatus according to the first embodiment. 15 is an explanatory diagram schematically showing a relationship between a reference pattern of a rotating cylinder and a drawing line. FIG. 16 is an explanatory diagram schematically showing a signal output from a photo sensor that reflects light reflected from a reference pattern of a rotating cylinder in a bright field of light. The control unit 16 rotates the rotating cylinder DR as shown in FIG. 15 in order to perform calibration for grasping the positional relationship of the plurality of drawing units UW1 to UW5. By rotating the cylinder DR, a light-transmitting substrate P that depicts the degree of light beam LB penetration can be carried.

如上所述,基準圖案RMP與旋轉圓筒DR之外周面成一體。如圖15所示,基準圖案RMP中、任意之基準圖案RMP1隨著旋轉圓筒DR外周面之移動而移動。因此,基準圖案RMP1在通過描繪線LL1、LL3、LL5後,通過描繪線LL2、LL4。例如,控制部16在相同基準圖案RMP1通過描繪線LL1、LL3、LL5後時,使描繪單元UW1、UW3、UW5之描繪光束LB掃描。控制部16,在相同基準圖案RMP1通過描繪線LL2、LL4後時,使描繪單元UW2、UW4之描繪光束LB掃描(步驟S1)。因此、基準圖案RMP1 即成為用以掌握描繪單元UW1~UW5之位置關係的基準。 As described above, the reference pattern RMP is integrated with the outer peripheral surface of the rotating cylinder DR. As shown in FIG. 15, among the reference patterns RMP, an arbitrary reference pattern RMP1 moves as the outer peripheral surface of the rotating cylinder DR moves. Therefore, after the reference pattern RMP1 passes through the drawing lines LL1, LL3, and LL5, it passes through the drawing lines LL2 and LL4. For example, the control unit 16 scans the drawing beams LB of the drawing units UW1, UW3, and UW5 after the same reference pattern RMP1 passes through the drawing lines LL1, LL3, and LL5. The control unit 16 scans the drawing beams LB of the drawing units UW2 and UW4 after the same reference pattern RMP1 passes through the drawing lines LL2 and LL4 (step S1). Therefore, the reference pattern RMP1 That is, it becomes a reference for grasping the positional relationship of the drawing units UW1 to UW5.

上述校準檢測系31之光電感測器31Cs(圖4),透過包含f-θ透鏡系85與掃描器83之掃描光學系,檢測來自基準圖案RMP1之反射光。光電感測器31Cs連接於控制部16,控制部16檢測光電感測器31Cs之檢測訊號(步驟S2)。例如,描繪單元UW1~UW5就描繪線LL1~LL5毎一個,將複數個描繪光束LB之各個於既定掃描方向掃描複數行。 The photodetector 31Cs (FIG. 4) of the calibration detection system 31 described above detects the reflected light from the reference pattern RMP1 through the scanning optical system including the f-θ lens system 85 and the scanner 83. The photo sensor 31Cs is connected to the control unit 16, and the control unit 16 detects a detection signal of the photo sensor 31Cs (step S2). For example, the drawing units UW1 to UW5 draw one line LL1 to LL5, and scan each of the plurality of drawing beams LB in a plurality of rows in a predetermined scanning direction.

例如,如圖16所示,描繪單元UW1~UW5,將描繪光束LB從描繪開始位置OC1起沿著上述旋轉圓筒DR之旋轉中心線AX2之方向(Y方向)進行描繪線之長度LBL(參照圖12)的第1行掃描SC1。其次,描繪單元UW1~UW5,將描繪光束LB從描繪開始位置OC1起沿著上述旋轉圓筒DR之旋轉中心線AX2之方向(Y方向)進行描繪線之長度LBL(參照圖12)的第2行掃描SC2。其次,描繪單元UW1~UW5,將描繪光束LB從描繪開始位置OC1起沿著上述旋轉圓筒DR之旋轉中心線AX2之方向(Y方向)進行描繪線之長度LBL(參照圖12)的第3行掃描SC3。 For example, as shown in FIG. 16, the drawing units UW1 to UW5 draw the drawing beam length LB from the drawing start position OC1 along the direction (Y direction) of the rotation center line AX2 of the rotating cylinder DR (see FIG. Figure 1) Scans SC1 on the first line. Next, the drawing units UW1 to UW5 perform the second drawing line length LBL (see FIG. 12) along the direction (Y direction) of the rotation center line AX2 of the rotating cylinder DR from the drawing start position OC1. Line scan SC2. Next, the drawing units UW1 to UW5 perform the third drawing line length LBL (see FIG. 12) of the drawing light beam LB along the direction (Y direction) of the rotation center line AX2 of the rotating cylinder DR from the drawing start position OC1. Line scan SC3.

旋轉圓筒DR,由於係繞旋轉中心線AX2旋轉,因此第1行掃描SC1,第2行掃描SC2及第3行掃描SC3在基準圖案RMP1上之X方向位置,有ΔP1、ΔP2之差異。又,控制部16,亦可以是進行在使旋轉圓筒DR靜止之狀態下進行沿第1行掃描SC1之描繪光束LB之掃描,之後,在使旋轉圓筒DR旋轉ΔP1分後靜止,進行沿第2行掃描SC2之描繪光束LB之掃描,後再次使旋轉圓筒DR旋轉ΔP2後靜止,進行沿第3行掃描SC3之描繪光束LB之掃描、以此順序使各部動作的程序。 Since the rotating cylinder DR rotates around the rotation center line AX2, the X-direction position of the first line scan SC1, the second line scan SC2, and the third line scan SC3 on the reference pattern RMP1 is different from ΔP1 and ΔP2. In addition, the control unit 16 may perform scanning of the drawing beam LB along the first line SC1 while the rotating cylinder DR is stationary, and then, after rotating the rotating cylinder DR by ΔP1 minutes, stand still, and perform Scanning of the drawing beam LB of the second line scan SC2, and then rotating the rotating cylinder DR again by ΔP2, and then stopping, scanning the drawing beam LB along the third line of scanning SC3, and a program for moving each part in this order.

如上所述,基準圖案RMP,係設定成形成在旋轉圓筒DR 外周面之彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2,較上述描繪線之長度LBL小。因此、當投射第1行掃描SC1,第2行掃描SC2及第3行掃描SC3之描繪光束LB時,描繪光束LB至少照射於交點部Cr1、Cr2。線圖案RL1、RL2係於旋轉圓筒DR之表面以凹凸形成。當將旋轉圓筒DR表面之凹凸之段差量作成特定條件時,描繪光束LB投射於線圖案RL1、RL2而產生之反射光,會部分的產生反射強度之差。例如,如圖16所示,線圖案RL1、RL2係旋轉圓筒DR表面之凹部時,當描繪光束LB投射於線圖案RL1、RL2時,於線圖案RL1、RL2反射之反射光即被光電感測器31Cs於亮視野受光。 As described above, the reference pattern RMP is set to be formed on the rotating cylinder DR The intersections Cr1 and Cr2 of the two line patterns RL1 and RL2 that cross each other on the outer peripheral surface are shorter than the length LBL of the drawing line. Therefore, when the drawing light beam LB of the first line scan SC1, the second line scan SC2, and the third line scan SC3 is projected, the drawing light beam LB is irradiated at least to the intersections Cr1 and Cr2. The line patterns RL1 and RL2 are formed as irregularities on the surface of the rotating cylinder DR. When the unevenness of the unevenness on the surface of the rotating cylinder DR is set to a specific condition, the reflected light generated when the drawing light beam LB is projected on the line patterns RL1 and RL2 may partially cause a difference in reflection intensity. For example, as shown in FIG. 16, when the line patterns RL1 and RL2 are concave portions on the surface of the rotating cylinder DR, when the drawing light beam LB is projected on the line patterns RL1 and RL2, the reflected light reflected by the line patterns RL1 and RL2 is photoinductive. The detector 31Cs receives light in a bright field.

控制部16根據來自光電感測器31Cs之輸出訊號,檢測基準圖案RMP之邊緣位置psc1。例如,控制部16根據第1行掃描SC1時從光電感測器31Cs所得之輸出訊號,儲存第1行掃描位置資料Dsc1、與基準圖案RMP之邊緣位置psc1之中間值mpsc1。 The control unit 16 detects the edge position psc1 of the reference pattern RMP based on the output signal from the photo sensor 31Cs. For example, the control unit 16 stores the scan position data Dsc1 in the first line and the intermediate value mpsc1 of the edge position psc1 of the reference pattern RMP according to the output signal obtained from the photo sensor 31Cs when scanning SC1 in the first line.

其次,控制部16根據第2行掃描SC2時從光電感測器31Cs所得之輸出訊號,儲存第2行掃描位置資料Dsc2、與基準圖案RMP之邊緣位置psc1之中間值mpsc1。此外,控制部16根據第3行掃描SC3時從光電感測器31Cs所得之輸出訊號,儲存第3行掃描位置資料Dsc3、與基準圖案RMP之邊緣位置psc1之中間值mpsc1。 Next, the control unit 16 stores the second position scan position data Dsc2 and the intermediate value mpsc1 of the edge position psc1 of the reference pattern RMP according to the output signal obtained from the photo sensor 31Cs when scanning SC2 in the second line. In addition, the control unit 16 stores an intermediate value mpsc1 of the scanning position data Dsc3 of the third line and the edge position psc1 of the reference pattern RMP according to the output signal obtained from the photo sensor 31Cs when scanning SC3 of the third line.

控制部16從第1行掃描位置資料Dsc1,第2行掃描位置資料Dsc2及第3行掃描位置資料Dsc3、與複數個基準圖案RMP之邊緣位置psc1之中間值mpsc1,透過運算求出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2之座標位置。其結果,控制部16亦可運算出彼此交叉之2條 線圖案RL1、RL2之交點部Cr1、Cr2與描繪開始位置OC1之關係。針對其他描繪單元UW2~5亦同樣的,控制部16可運算出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2與描繪開始位置OC2~OC5(參照圖11)之關係。又,上述中間值mpsc1亦可從從光電感測器31Cs輸出之訊號之峰值求出。 The control unit 16 calculates the intersections between the first line scan position data Dsc1, the second line scan position data Dsc2 and the third line scan position data Dsc3, and the intermediate position mpsc1 of the edge positions psc1 of the plurality of reference patterns RMP through calculation. The coordinate positions of the intersection points Cr1 and Cr2 of the two line patterns RL1 and RL2. As a result, the control unit 16 can also calculate two lines that cross each other. The relationship between the intersections Cr1 and Cr2 of the line patterns RL1 and RL2 and the drawing start position OC1. The same applies to the other drawing units UW2 to 5. The control unit 16 can calculate the relationship between the intersection points Cr1 and Cr2 of the two line patterns RL1 and RL2 that cross each other and the drawing start positions OC2 to OC5 (see FIG. 11). The above-mentioned intermediate value mpsc1 can also be obtained from the peak value of the signal output from the photo sensor 31Cs.

以上,針對於線圖案RL1、RL2反射之反射光由光電感測器31Cs在亮視野受光之情形作了說明,但光電感測器31Cs亦可將於線圖案RL1、RL2反射之反射光在暗視野受光。圖17係以示意方式顯示將來自旋轉圓筒之基準圖案之反射光於暗視野受光之光電感測器的說明圖。圖18係以示意方式顯示從將來自旋轉圓筒之基準圖案之反射光於暗視野受光之光電感測器輸出之訊號的說明圖。如圖17所示,校準檢測系31,在中繼透鏡94與光電感測器31Cs之間配置具有環帶狀光穿透部之遮光構件31f。因此、光電感測器31Cs,係受光於線圖案RL1、RL2反射之反射光中之邊緣散射光或繞射光。例如,如圖18所示,線圖案RL1、RL2係旋轉圓筒DR表面之凹部時,當描繪光束LB投射於線圖案RL1、RL2時,光電感測器31Cs即將於線圖案RL1、RL2反射之反射光於暗視野加以受光。 Above, the case where the reflected light reflected by the line patterns RL1, RL2 is received by the photo sensor 31Cs in a bright field of view has been described, but the photo sensor 31Cs may also reflect the reflected light reflected by the line patterns RL1, RL2 in the dark. Field of view is affected by light. FIG. 17 is an explanatory diagram schematically showing a photo sensor that reflects light reflected from a reference pattern of a rotating cylinder in a dark field. FIG. 18 is an explanatory diagram schematically showing a signal output from a photo sensor that reflects light reflected from a reference pattern of a rotating cylinder in a dark field. As shown in FIG. 17, in the calibration detection system 31, a light shielding member 31 f having an endless belt-shaped light transmitting portion is disposed between the relay lens 94 and the photo sensor 31Cs. Therefore, the photodetector 31Cs is the edge scattered light or diffracted light among the reflected light reflected by the line patterns RL1 and RL2. For example, as shown in FIG. 18, when the line patterns RL1 and RL2 are concave portions on the surface of the rotating cylinder DR, when the drawing beam LB is projected on the line patterns RL1 and RL2, the photo sensor 31Cs is about to be reflected by the line patterns RL1 and RL2. The reflected light is received in a dark field.

控制部16根據從光電感測器31Cs輸出之訊號,檢測基準圖案RMP之邊緣位置pscd1。例如,控制部16根據第1行掃描SC1時從光電感測器31Cs所得之輸出訊號,儲存第1行掃描位置資料Dsc1、與基準圖案RMP之邊緣位置pscd1之中間值mpscd1。其次,控制部16根據第2行掃描SC2時從光電感測器31Cs所得之輸出訊號,儲存第2行掃描位置資料Dsc2、與基準圖案RMP之邊緣位置pscd1之中間值mpscd1。控制部16根據第3 行掃描SC3時從光電感測器31Cs所得之輸出訊號,儲存第3行掃描位置資料Dsc3、與基準圖案RMP之邊緣位置pscd1之中間值mpscd1。 The control unit 16 detects the edge position pscd1 of the reference pattern RMP based on a signal output from the photo sensor 31Cs. For example, the control unit 16 stores an intermediate value mpscd1 of the scanning position data Dsc1 of the first line and the edge position pscd1 of the reference pattern RMP based on the output signal obtained from the photo sensor 31Cs when scanning SC1 in the first line. Next, the control unit 16 stores the middle position mpscd1 of the scan position data Dsc2 of the second line and the edge position pscd1 of the reference pattern RMP based on the output signal obtained from the photo sensor 31Cs when scanning SC2 in the second line. The control unit 16 The output signal obtained from the photo sensor 31Cs during line scan SC3 stores the middle position mpscd1 of the scan position data Dsc3 of the third line and the edge position pscd1 of the reference pattern RMP.

控制部16,從第1行掃描位置資料Dsc1,第2行掃描位置資料Dsc2及第3行掃描位置資料Dsc3、與複數個基準圖案RMP之邊緣位置pscd1之中間值mpscd1,透過運算求出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2。其結果,控制部16,透過運算求出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2之座標位置與描繪開始位置OC1之關係。 The control unit 16 calculates an intersection between the scan position data Dsc1 of the first row, the scan position data Dsc2 of the second row, the scan position data Dsc3 of the third row, and the intermediate value mpscd1 of the edge positions pscd1 of the plurality of reference patterns RMP through calculation. The intersections Cr1 and Cr2 of the two line patterns RL1 and RL2. As a result, the control unit 16 calculates the relationship between the coordinate positions of the intersection points Cr1 and Cr2 of the two line patterns RL1 and RL2 crossing each other and the drawing start position OC1 through calculation.

針對其他描繪單元UW2~5亦同樣的,控制部16可運算出彼此交叉之2條線圖案RL1、RL2之交點部Cr1、Cr2與描繪開始位置OC2~OC5之關係。如以上所述,於線圖案RL1、RL2反射之反射光由光電感測器31Cs於暗視野受光之情形時,可提高複數個基準圖案RMP之邊緣位置pscd1之精度。 The same applies to the other drawing units UW2 to 5, and the control unit 16 can calculate the relationship between the intersection points Cr1 and Cr2 of the two line patterns RL1 and RL2 that cross each other and the drawing start positions OC2 to OC5. As described above, when the reflected light reflected by the line patterns RL1 and RL2 is received by the photo sensor 31Cs in a dark field, the accuracy of the edge position pscd1 of the plurality of reference patterns RMP can be improved.

如圖14所示,控制部16,從於步驟S2檢測之檢測訊號求出對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)(步驟S3)。圖19係以示意方式顯示旋轉圓筒之基準圖案彼此之位置關係的說明圖。圖20係以示意方式顯示複數個描繪線之相對位置關係的說明圖。如上所述,配置奇數號第1描繪線LL1,第3描繪線LL3及第5描繪線LL5,如圖19所示,就第1描繪線LL1,第3描繪線LL3及第5描繪線LL5之各個,所檢測之交點部Cr1間之基準距離PL預先儲存於控制部16。同樣的,就第2描繪線LL2及第4描繪線LL4之各個,所檢測之交點部Cr1間之基準距離PL亦預先儲存於控制部16。又,就第2描繪線LL2及第3描繪線LL3之各個,所檢測之交點部Cr1間之基準距離ΔPL亦 預先儲存於控制部16。進一步的,就第4描繪線LL4及第5描繪線LL5之各個,所檢測之交點部Cr1間之基準距離ΔPL亦預先儲存於控制部16。 As shown in FIG. 14, the control unit 16 obtains adjustment information (calibration information) corresponding to the arrangement states of the plurality of drawing lines LL1 to LL5 or the mutual arrangement errors from the detection signals detected in step S2 (step S3). FIG. 19 is an explanatory diagram schematically showing the positional relationship between the reference patterns of the rotating cylinder. FIG. 20 is an explanatory diagram schematically showing the relative positional relationship of a plurality of drawn lines. As described above, the odd-numbered first drawing line LL1, the third drawing line LL3, and the fifth drawing line LL5 are arranged. As shown in FIG. 19, the first drawing line LL1, the third drawing line LL3, and the fifth drawing line LL5 are arranged. In each case, the reference distance PL between the detected intersection points Cr1 is stored in the control unit 16 in advance. Similarly, for each of the second drawing line LL2 and the fourth drawing line LL4, the reference distance PL between the detected intersection points Cr1 is also stored in the control unit 16 in advance. For each of the second drawing line LL2 and the third drawing line LL3, the reference distance ΔPL between the detected intersections Cr1 is also Stored in the control unit 16 in advance. Further, for each of the fourth drawing line LL4 and the fifth drawing line LL5, the reference distance ΔPL between the detected intersection points Cr1 is also stored in the control unit 16 in advance.

例如,如圖20所示,控制部16,就第1描繪線LL1之描繪開始位置OC1已根據來自原點檢測器98(參照圖7)之訊號掌握了位置關係,因此能求出交點部Cr1與描繪開始位置OC1之距離BL1。又,控制部16,就第3描繪線LL3之描繪開始位置OC3已由原點檢測器98檢測了位置,因此能求出交點部Cr1與描繪開始位置OC3之距離BL3。從而、控制部16可根據距離BL1,距離BL3及基準距離PL求出描繪開始位置OC1與描繪開始位置OC3之位置關係,儲存沿描繪線LL1、LL3掃描之描繪光束LB之原點間之原點間距離ΔOC13。同樣的,控制部16,就第5描繪線LL5之描繪開始位置OC5已由原點檢測器98檢測了位置,因此能求出交點部Cr1與描繪開始位置OC5之距離BL5。從而、控制部16可根據距離BL3、距離BL5及基準距離PL求出描繪開始位置OC3與描繪開始位置OC5之位置關係,儲存沿描繪線LL3、LL5掃描之描繪光束LB之原點間之原點間距離ΔOC35。 For example, as shown in FIG. 20, since the control unit 16 has grasped the positional relationship with respect to the drawing start position OC1 of the first drawing line LL1 based on a signal from the origin detector 98 (see FIG. 7), the intersection point Cr1 can be obtained The distance BL1 from the drawing start position OC1. In addition, since the control unit 16 has detected the position of the drawing start position OC3 of the third drawing line LL3 by the origin detector 98, the distance BL3 between the intersection point Cr1 and the drawing start position OC3 can be obtained. Therefore, the control unit 16 can obtain the positional relationship between the drawing start position OC1 and the drawing start position OC3 based on the distance BL1, the distance BL3, and the reference distance PL, and store the origin between the origins of the drawing beam LB scanned along the drawing lines LL1 and LL3. Interval distance ΔOC13. Similarly, since the control unit 16 has detected the position of the drawing start position OC5 of the fifth drawing line LL5 by the origin detector 98, the distance BL5 between the intersection point Cr1 and the drawing start position OC5 can be obtained. Therefore, the control unit 16 can obtain the positional relationship between the drawing start position OC3 and the drawing start position OC5 based on the distance BL3, the distance BL5, and the reference distance PL, and store the origin between the origins of the drawing beam LB scanned along the drawing lines LL3 and LL5. The distance ΔOC35.

控制部16,就第2描繪線LL2之描繪開始位置OC2已由原點檢測器98檢測了位置,因此能求出交點部Cr1與描繪開始位置OC2之距離BL2。又,控制部16,就第4描繪線LL4之描繪開始位置OC4已由原點檢測器98檢測了位置,因此能求出交點部Cr1與描繪開始位置OC4之距離BL4。從而、控制部16可根據距離BL2,距離BL4及基準距離PL求出描繪開始位置OC2與描繪開始位置OC4之位置關係,儲存沿描繪線LL2、LL4掃描之描繪光束LB之原點間之原點間距離ΔOC24。 Since the control unit 16 has detected the position of the drawing start position OC2 of the second drawing line LL2 by the origin detector 98, the distance BL2 between the intersection point Cr1 and the drawing start position OC2 can be obtained. In addition, since the control unit 16 has detected the position of the drawing start position OC4 of the fourth drawing line LL4 by the origin detector 98, the distance BL4 between the intersection point Cr1 and the drawing start position OC4 can be obtained. Therefore, the control unit 16 can obtain the positional relationship between the drawing start position OC2 and the drawing start position OC4 based on the distance BL2, the distance BL4, and the reference distance PL, and store the origin between the origins of the drawing beam LB scanned along the drawing lines LL2 and LL4. The distance ΔOC24.

又,控制部16,由於描繪開始位置OC1與描繪開始位置OC2係透過上述相同基準圖案RMP1求出之位置,因此能容易的儲存沿描繪線LL1、LL2掃描之描繪光束LB之原點間之原點間距離ΔOC12。如以上之說明,曝光裝置EX能求出複數個描繪單元UW1~UW5各個之原點(描繪開始點)之彼此的位置關係。 In addition, the control unit 16 can easily store the origin between the origins of the drawing beams LB scanned along the drawing lines LL1 and LL2 because the drawing start position OC1 and the drawing start position OC2 are positions obtained through the same reference pattern RMP1 described above. Distance between points ΔOC12. As described above, the exposure device EX can obtain the positional relationship between the origins (drawing start points) of each of the plurality of drawing units UW1 to UW5.

又,控制部16,可從在第2描繪線LL2及第3描繪線LL3檢測之交點部Cr1間之基準距離ΔPL,檢測描繪開始位置OC2與描繪開始位置OC3之接合誤差。進一步的,可從在第4描繪線LL4及第5描繪線LL5檢測之交點部Cr1間之基準距離ΔPL,檢測描繪開始位置OC4與描繪開始位置OC5之接合誤差。 The control unit 16 can detect a joining error between the drawing start position OC2 and the drawing start position OC3 from the reference distance ΔPL between the intersection points Cr1 detected at the second drawing line LL2 and the third drawing line LL3. Further, from the reference distance ΔPL between the intersection points Cr1 detected at the fourth drawing line LL4 and the fifth drawing line LL5, a joint error between the drawing start position OC4 and the drawing start position OC5 can be detected.

在從各描繪線LL1~LL5之描繪開始位置OC1~OC5到描繪結束位置EC1~EC5為止之期間檢測2個交點部Cr1、Cr2。據此,即能檢測從描繪開始位置OC1~OC5到描繪結束位置EC1~EC5為止之掃描方向。其結果,控制部16可檢測各描繪線LL1~LL5相對沿中心線AX2之方向(Y方向)之角度誤差。 During the period from the drawing start positions OC1 to OC5 of each drawing line LL1 to LL5 to the drawing end positions EC1 to EC5, two intersection portions Cr1 and Cr2 are detected. Accordingly, the scanning directions from the drawing start positions OC1 to OC5 to the drawing end positions EC1 to EC5 can be detected. As a result, the control unit 16 can detect an angular error of each of the drawing lines LL1 to LL5 with respect to the direction (Y direction) along the center line AX2.

控制部16,針對上述基準圖案RMP1,求出對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)。包含基準圖案RMP1之基準圖案RMP,係以一定間距(週期)Pf1、Pf2重複刻設之網格狀基準圖案。因此、控制部16針對以各間距Pf1、Pf2重複之基準圖案RMP,求出對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),運算與複數個描繪線LL1~LL5之相對位置關係之偏差相關之資訊。其結果,控制部16能更進一步提高對應複數個描繪 線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)之精度。 For the reference pattern RMP1, the control unit 16 obtains adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement errors. The reference pattern RMP including the reference pattern RMP1 is a grid-like reference pattern repeatedly engraved at a certain pitch (period) Pf1, Pf2. Therefore, the control unit 16 obtains the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the arrangement error of each other with respect to the reference pattern RMP repeated at each pitch Pf1, Pf2, and calculates and plural drawing lines. Information about the deviation of the relative positional relationship between LL1 ~ LL5. As a result, the control unit 16 can further improve the correspondence to a plurality of renderings. The accuracy of the adjustment information (calibration information) of the arrangement state of the lines LL1 ~ LL5 or the mutual arrangement error.

其次,如圖14所示,控制部16進行調整描繪狀態之處理(步驟S4)。控制部16,根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以編碼器讀頭EN1、EN2檢測之標尺部(旋轉圓筒DR)GPa、GPb之旋轉角度位置,調整奇數號及偶數號之描繪單元UW1~UW5之描繪位置。編碼器讀頭EN1、EN2可根據上述標尺部(旋轉圓筒DR)GPa、GPb檢測基板P之搬送量。 Next, as shown in FIG. 14, the control part 16 performs the process of adjusting a drawing state (step S4). The control unit 16 adjusts information (calibration information) corresponding to the arrangement state of a plurality of drawing lines LL1 to LL5 or the mutual arrangement errors, and the scale units (rotating cylinder DR) GPa, GPb detected by the encoder read heads EN1 and EN2. For the rotation angle position, adjust the drawing positions of the odd-numbered and even-numbered drawing units UW1 to UW5. The encoder read heads EN1 and EN2 can detect the conveyance amount of the substrate P based on the above-mentioned scale section (rotating cylinder DR) GPa and GPb.

圖21,與先前之圖12同樣的,係以示意方式顯示基板之每單位時間之移動距離與移動距離內所含之描繪線數之關係的說明圖。如圖21所示,編碼器讀頭EN1、EN2可檢測並儲存基板P之每單位時間之移動距離ΔX。又,亦可藉由上述對準顯微鏡AM1、AM2逐次檢測複數個對準標記Ks1~Ks3,以求出並儲存移動距離ΔX。 FIG. 21 is an explanatory diagram schematically showing the relationship between the moving distance per unit time of the substrate and the number of drawing lines included in the moving distance, similarly to the previous FIG. 12. As shown in FIG. 21, the encoder read heads EN1 and EN2 can detect and store the moving distance ΔX per unit time of the substrate P. In addition, the alignment microscopes AM1 and AM2 may be used to sequentially detect the plurality of alignment marks Ks1 to Ks3 to obtain and store the moving distance ΔX.

於基板P之每單位時間之移動距離ΔX,以描繪單元UW1描繪之複數個描繪線LL1係以光束點光SP之光束線SPL1、SPL2及SPL3描繪,以各個光束點光SP之點直徑Xs之約1/2於X方向(及Y方向)重疊之方式掃描。同樣的,描繪線LL1之描繪終端PTb側之光束點光SP與描繪線LL2之描繪終端PTb側之光束點光SP,係隨著基板P往長條方向之移動於基板P之寬度方向以重疊距離CXs接合。 The moving distance ΔX per unit time on the substrate P, the plurality of drawing lines LL1 drawn by the drawing unit UW1 are drawn by the beam lines SPL1, SPL2, and SPL3 of the beam spot light SP, and by the point diameter Xs of each beam spot light SP Scan about 1/2 of the X direction (and Y direction). Similarly, the beam spot light SP on the drawing terminal PTb side of the drawing line LL1 and the beam spot light SP on the drawing terminal PTb side of the drawing line LL2 overlap with the width direction of the substrate P as the substrate P moves in the longitudinal direction. Distance CXs engage.

例如,當旋轉圓筒DR上下動時,奇數號及偶數號描繪單元UW1~UW5之X方向描繪位置即產生偏移,有可能產生例如X方向之倍率差。控制部16,使旋轉圓筒DR搬送之基板P之搬送速度(移動速度)慢時,光束線SPL1、SPL2及SPL3之X方向間隔距離CXs變小,可調整X方 向之描繪倍率變小。相反的,當加快旋轉圓筒DR搬送之基板P之搬送速度(移動速度)時,光束線SPL1、SPL2及SPL3之X方向間隔距離CXs即變大,可調整X方向之描繪倍率變大。以上,針對描繪線LL1參照圖21作了說明,針對其他之描繪線LL2~LL5亦同。控制部16,根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以編碼器讀頭EN1、EN2檢測之標尺部(旋轉圓筒DR)GPa、GPb之旋轉角度位置,變更在基板P之長條方向之基板P每單位時間之移動距離ΔX、與該移動距離內所含之光束線SPL1、SPL2及SPL3之數量的關係。因此,控制部16可調整奇數號及偶數號描繪單元UW1~UW5於X方向之描繪位置。 For example, when the rotating cylinder DR moves up and down, the X-direction drawing positions of the odd-numbered and even-numbered drawing units UW1 to UW5 are shifted, and for example, a magnification difference in the X-direction may occur. The control unit 16 reduces the X-direction separation distance CXs of the beam lines SPL1, SPL2, and SPL3 when the substrate P conveyed by the rotating cylinder DR is slow (moving speed), and the X direction can be adjusted. The drawing magnification becomes smaller. Conversely, when the transfer speed (moving speed) of the substrate P transferred by the rotary cylinder DR is increased, the X-direction separation distance CXs of the beam lines SPL1, SPL2, and SPL3 becomes larger, and the drawing magnification that can be adjusted in the X direction becomes larger. The drawing line LL1 has been described above with reference to FIG. 21, and the same applies to the other drawing lines LL2 to LL5. The control unit 16 adjusts information (calibration information) corresponding to the arrangement state of a plurality of drawing lines LL1 to LL5 or the mutual arrangement errors, and the scale units (rotating cylinder DR) GPa, GPb detected by the encoder read heads EN1 and EN2 The rotation angle position changes the relationship between the moving distance ΔX per unit time of the substrate P in the strip direction of the substrate P and the number of beam lines SPL1, SPL2, and SPL3 included in the moving distance. Therefore, the control unit 16 can adjust the drawing positions of the odd-numbered and even-numbered drawing units UW1 to UW5 in the X direction.

圖22係以示意方式說明與脈衝光源之系統時脈同步發光之脈衝光的說明圖。以下,針對描繪線LL2亦參照圖21加以說明,針對描繪線LL1、LL3~LL5亦同。光源裝置CNT可與作為系統時脈SQ之脈衝訊號wp同步擊出光束點光SP。藉由改變系統時脈SQ之頻率Fz,脈衝訊號wp之脈衝間隔Δwp(=1/Fz)亦改變。該時間性的脈衝間隔Δwp,於描繪線LL2上,係對應每一脈衝之點光SP之主掃描方向之間隔距離CXs。控制部16,係使描繪光束LB之光束點光SP沿基板P上之描繪線LL2掃描描繪線之長度LBL。 FIG. 22 is an explanatory diagram schematically illustrating pulsed light emitted synchronously with the clock of a pulsed light source system. Hereinafter, the drawing line LL2 will also be described with reference to FIG. 21, and the same will be applied to the drawing lines LL1, LL3 to LL5. The light source device CNT can strike the beam spot light SP in synchronization with the pulse signal wp as the system clock SQ. By changing the frequency Fz of the system clock SQ, the pulse interval Δwp (= 1 / Fz) of the pulse signal wp also changes. The temporal pulse interval Δwp is the distance CXs in the main scanning direction of the point light SP corresponding to each pulse on the drawing line LL2. The control unit 16 causes the beam spot light SP of the drawing light beam LB to scan the length LBL of the drawing line along the drawing line LL2 on the substrate P.

控制部16,具備在描繪光束LB沿描繪線LL2進行掃描之期間,部分的變更系統時脈SQ之週期,以使脈衝間隔Δwp在描繪線LL2中之任意位置増減的功能。例如,原本之系統時脈SQ為100MHz之場合,控制部16,在掃描描繪線之長度LBL之期間以一定時間間隔(週期)部分的將系統時脈SQ變更為例如101MHz(或99MHz)。其結果,光束點光SP在 描繪線之長度LBL之數量即増減。換言之,控制部16,在掃描描繪線之長度LBL之期間,以既定次(1以上)之週期間隔部分的増減系統時脈SQ之工作比。據此,光源CNT產生之光束點光SP之間隔即變化脈衝間隔Δwp之變化分,光束點光SP彼此之重疊距離CXs變化。而Y方向之描繪始端PTa與描繪終端PTb之距離,看起來即伸縮。 The control unit 16 has a function of partially changing the period of the system clock SQ while the drawing beam LB is being scanned along the drawing line LL2 so that the pulse interval Δwp is decreased at any position in the drawing line LL2. For example, when the original system clock SQ is 100 MHz, the control unit 16 changes the system clock SQ to, for example, 101 MHz (or 99 MHz) at a certain time interval (period) while scanning the length LBL of the drawing line. As a result, the beam spot light SP The number of drawn lines LBL decreases. In other words, the control unit 16 decrements the operating ratio of the system clock SQ at a predetermined interval (1 or more) while scanning the length LBL of the drawing line. According to this, the interval between the beam spot lights SP generated by the light source CNT, that is, the variation of the change pulse interval Δwp, and the overlapping distance CXs of the beam spot lights SP between each other. The distance between the drawing start point PTa and the drawing terminal PTb in the Y direction appears to expand and contract.

舉一例而言,描繪線之長度LBL為30mm時,將其11等分而就每一約3mm之描繪長(週期間隔)僅使1處之系統時脈SQ之脈衝間隔Δwp増減。脈衝間隔Δwp之増減量,如圖13之說明,若將不會招致隨著相鄰2個點光SP之間隔距離CXs之變化的積算輪廓(強度分布)之大幅悪化之範圍、例如將基準之間隔距離CSx設為點光之直徑Xs(3μm)之50%的話,相對其設為約±15%左右。若設脈衝間隔Δwp之増減為+10%(間隔距離CSx為點光之直徑Xs之60%)的話,在長度LBL之描繪線中之離散的10處之各處,1脈衝分之點光會產生往主掃描方向延伸直徑Xs之10%分的位置偏移。其結果,描繪後之描繪線之長度LBL,會相對30mm延長3μm。此係代表描繪於基板P上之圖案往Y方向擴大0.01%(100ppm)之意。據此,即使是在基板P於Y方向伸縮之情形時,亦能因應使描繪圖案於Y方向伸縮進行曝光。 For example, when the length LBL of the drawing line is 30 mm, the drawing line is divided into 11 equal parts and the drawing interval (period interval) of about 3 mm reduces the pulse interval Δwp of the system clock SQ at only one place. The decrease in the pulse interval Δwp is as shown in FIG. 13. If the cumulative profile (intensity distribution) that does not cause a change with the distance CXs between the two adjacent point light SPs will be significantly reduced, for example, the reference When the separation distance CSx is set to 50% of the diameter Xs (3 μm) of the spot light, it is set to about ± 15%. If the reduction of the pulse interval Δwp is set to + 10% (the separation distance CSx is 60% of the diameter Xs of the point light), the point light of 1 pulse per minute will be scattered at 10 discrete points in the drawing line of the length LBL. A position shift of 10% of the diameter Xs in the main scanning direction occurs. As a result, the length LBL of the drawn line after drawing becomes 3 μm longer than 30 mm. This means that the pattern drawn on the substrate P is enlarged by 0.01% (100 ppm) in the Y direction. Accordingly, even when the substrate P expands and contracts in the Y direction, it is possible to expose the drawing pattern in accordance with the expansion and contraction in the Y direction.

將增減脈衝間隔Δwp之位置,例如,設成能於描繪線LL1~LL5之1次掃描,例如預設於系統時脈SQ之每100脈衝、每200脈衝、…之任意值的構成。如此一來,即能將描繪圖案之主掃描方向(Y方向)之伸縮量在比較大範圍內進行變更,因應基板P之伸縮及變形,動態的進行倍率修正。因此,於本實施形態之曝光裝置EX之控制部16中包含系統時 脈SQ之產生電路,該產生電路具有脈衝間隔Δwp以一定之原時脈訊號為系統時脈SQ產生之時脈振盪部、與輸入該原時脈訊號計數(count)預先設定之脈衝數分後將系統時脈SQ之次一時脈脈衝產生為止之時間相對脈衝間隔Δwp使之増減之時間遷移部。又,描繪線(長度LBL)中,使系統時脈SQ之脈衝間隔Δwp増減之部分之數量,雖係視待描繪之圖案之Y方向之倍率修正比(ppm)大致決定,最少時,可以是對應長度LBL之點光SP之掃描時間Ts中之至少1處。 For example, the position of the increase / decrease pulse interval Δwp is set to be able to perform one scan on the drawing lines LL1 to LL5, for example, a value preset to every 100 pulses, 200 pulses, etc. of the system clock SQ. In this way, the amount of expansion and contraction in the main scanning direction (Y direction) of the drawing pattern can be changed within a relatively large range, and the magnification can be dynamically adjusted in accordance with the expansion and contraction of the substrate P. Therefore, when the control unit 16 of the exposure apparatus EX of this embodiment includes a system The pulse SQ generating circuit has a pulse interval Δwp, a clock oscillation portion generated by a system clock SQ with a certain original clock signal, and a preset number of pulses after inputting the original clock signal count (count). A time shift unit that decrements the time from the next clock pulse of the system clock SQ to the pulse interval Δwp. In addition, the number of parts of the drawing line (length LBL) that reduces the pulse interval Δwp of the system clock SQ is approximately determined by the magnification correction ratio (ppm) in the Y direction of the pattern to be drawn. At least one of the scanning times Ts of the spot light SP corresponding to the length LBL.

圖23係顯示使系統時脈SQ之脈衝間隔Δwp部分地可變之時脈產生電路之一例。圖23中,從時脈振盪部200輸出與系統時脈SQ相同頻率之基本時脈訊號CKL。基本時脈訊號CKL係施加於藉由對基本時脈訊號CKL之各脈衝附加既定延遲時間Td產生系統時脈SQ之延遲電路202、及輸出將基本時脈訊號CKL之頻率例如增加20倍之增倍時脈訊號CKs之增倍電路204。 FIG. 23 shows an example of a clock generation circuit that partially changes the pulse interval Δwp of the system clock SQ. In FIG. 23, a basic clock signal CKL having the same frequency as the system clock SQ is output from the clock oscillation section 200. The basic clock signal CKL is applied to a delay circuit 202 that generates a system clock SQ by adding a predetermined delay time Td to each pulse of the basic clock signal CKL, and outputs a 20-fold increase in the frequency of the basic clock signal CKL, for example. Multiplier circuit 204 for the double clock signal CKs.

延遲電路202在內部具有將增倍時脈訊號CKs之脈衝數計數至既定值ΔNs為止之計數器。該計數器對既定值ΔNs進行計數之期間相當於延遲時間Td。既定值ΔNs係藉由預設定電路206設定。預設定電路206在內部具備作為既定值ΔNs之初始值之標準值Ns0,從外部(主CPU等)傳送來預設定值Dsb(與延遲時間Td之變化量ΔTd對應之值)後,將新的既定值ΔNs覆寫成前一刻之既定值ΔNs+Dsb。 The delay circuit 202 internally has a counter that counts the number of pulses of the multiplied clock signal CKs to a predetermined value ΔNs. The period during which the counter counts the predetermined value ΔNs corresponds to the delay time Td. The predetermined value ΔNs is set by the preset circuit 206. The preset circuit 206 internally has a standard value Ns 0 as an initial value of the predetermined value ΔNs, and transmits a preset value Dsb (a value corresponding to the change amount ΔTd of the delay time Td) from the outside (main CPU, etc.), and then The new default value ΔNs is overwritten with the previous value ΔNs + Dsb.

該覆寫係回應來自對從延遲電路202輸出之系統時脈SQ之脈衝進行計數之計數器電路208之完成脈衝訊號b進行。計數器電路208具備下述構成,即對系統時脈SQ之脈衝數進行計數至預設定值Dsa而輸出 完成脈衝訊號b後,將計數值重置成零後再次反覆對系統時脈SQ之脈衝數進行計數。預設定值Dsa雖為對應描繪線之長度LBL被N等分時之一個長度LBL/N之點光之脈衝數Nck,但不一定要對應長度LBL/N,亦可為任意值。此外,由上述延遲電路202、預設定電路206、計數器電路208構成時間偏移部。 The overwriting is performed in response to the completion pulse signal b from the counter circuit 208 that counts the pulses of the system clock SQ output from the delay circuit 202. The counter circuit 208 has a structure that counts the number of pulses of the system clock SQ to a preset value Dsa and outputs After the pulse signal b is completed, reset the count value to zero and count the pulse number of the system clock SQ again and again. Although the preset value Dsa is the number of pulses of the point light Nck corresponding to a length LBL / N when the length LBL of the drawn line is divided equally by N, it does not necessarily correspond to the length LBL / N, and may be an arbitrary value. The delay circuit 202, the preset circuit 206, and the counter circuit 208 constitute a time shift unit.

圖24係顯示圖23之電路構成中各部之訊號之時間遷移之時序圖。在預設定電路206設定作為初始值之標準值Ns0,設施加於延遲電路202之既定值ΔNs為標準值Ns0。在計數器電路208計數至設定之脈衝數Nck之前,亦即在完成脈衝訊號b產生前之狀態,來自預設定電路206之既定值ΔNs為Ns0,延遲電路202,如圖24所示,從基本時脈訊號CKL之各脈衝之上升對增倍時脈訊號CKs之脈衝數進行計數至既定值ΔNs,與該計數完成同時地作為系統時脈SQ輸出一個脈衝wp。是以,從基本時脈訊號CKL之脈衝之上升至系統時脈SQ之對應脈衝wp之上升為止之延遲時間Td1相當於對增倍時脈訊號CKs之脈衝進行計數至既定值ΔNs之時間。 FIG. 24 is a timing chart showing the time transition of the signals of each part in the circuit configuration of FIG. 23. In the pre-setting circuit 206 to set an initial value as a standard value Ns 0, add facilities to the delay circuit 202, a predetermined value ΔNs standard value Ns 0. Before the counter circuit 208 counts to the set pulse number Nck, that is, before the completion of the generation of the pulse signal b, the predetermined value ΔNs from the preset circuit 206 is Ns0, and the delay circuit 202 is shown in FIG. 24. From the basic time, The rise of each pulse of the pulse signal CKL counts the pulse number of the doubled pulse signal CKs to a predetermined value ΔNs, and outputs a pulse wp as the system clock SQ at the same time as the counting is completed. Therefore, the delay time Td 1 from the rise of the pulse of the basic clock signal CKL to the rise of the corresponding pulse wp of the system clock SQ is equivalent to the time of counting the pulses of the doubled clock signal CKs to a predetermined value ΔNs.

圖24中,藉由對應基本時脈訊號CKL之脈衝CKn在延遲時間Td1後產生之系統時脈SQ之脈衝wp,計數器電路208進行計數至預設定值Dsa(脈衝數Nck)後,計數器電路208輸出完成脈衝訊號b,與此回應地,預設定電路206將新的既定值ΔNs覆寫成前一刻之既定值ΔNs+Dsb。預設定值Dsb為對應圖22所示之脈衝間隔Δwp之變化量(ΔTd)之數值,圖24中,雖設定成負值,但正值亦相同。是以,在基本時脈訊號CKL之脈衝CKn之下一個脈衝CKn+1產生前,在延遲電路202設定對應較以標準值Ns0設定之延遲時間Td1短ΔTd之延遲時間Td2之既定值ΔNs。 In FIG. 24, the counter circuit 208 counts to the preset value Dsa (the number of pulses Nck) by the pulse wp of the system clock SQ generated after the delay time Td 1 corresponding to the pulse CKn of the basic clock signal CKL. The circuit 208 outputs the completion pulse signal b. In response to this, the preset circuit 206 overwrites the new predetermined value ΔNs with the predetermined value ΔNs + Dsb at the previous moment. The preset value Dsb is a value corresponding to the change amount (ΔTd) of the pulse interval Δwp shown in FIG. 22. Although it is set to a negative value in FIG. 24, the positive value is also the same. Therefore, before the next pulse CKn + 1 of the pulse CKn of the basic clock signal CKL is generated, the delay circuit 202 is set to a predetermined value of the delay time Td 2 which is shorter than the delay time Td 1 set by the standard value Ns 0 by ΔTd. ΔNs.

藉此,回應基本時脈訊號CKL之脈衝CKn+1產生之系統時脈SQ之脈衝wp’與前一刻之脈衝wp之脈衝間隔Δwp’較之前之脈衝間隔Δwp短。在脈衝wp’產生後,計數器電路208計數至脈衝數Nck次之系統時脈SQ為止前,不會產生完成脈衝訊號b,因此設定在延遲電路202之既定值ΔNs維持為對應延遲時間Td2之值,在完成脈衝訊號b接著產生為止,系統時脈SQ以相對於基本時脈訊號CKL一律地延遲延遲時間Td2之狀態輸出。是以,以基本時脈訊號CKL之頻率Fz決定之脈衝間隔Δwp與時間偏移所修正之脈衝間隔Δwp’之比β成為β=Δwp’/Δwp=1±(ΔTd/Δwp)(其中,ΔTd<Δwp) Thereby, the pulse interval Δwp 'of the system clock SQ generated from the pulse CKn + 1 of the basic clock signal CKL + 1 and the pulse wp of the previous moment is shorter than the previous pulse interval Δwp. After the pulse wp 'is generated, the counter circuit 208 counts up to the system clock SQ of the number of pulses Nck, and the completion pulse signal b is not generated. Therefore, the predetermined value ΔNs set in the delay circuit 202 is maintained at the corresponding delay time Td 2 Value, the system clock SQ is output in a state where the delay time Td 2 is uniformly delayed relative to the basic clock signal CKL until the pulse signal b is generated next. Therefore, the ratio β of the pulse interval Δwp determined by the frequency Fz of the basic clock signal CKL to the pulse interval Δwp 'corrected by the time offset becomes β = Δwp' / Δwp = 1 ± (ΔTd / Δwp) (where, ΔTd <Δwp)

沿著描繪線描繪之圖案之寬度方向之尺寸,在β>1時較以描繪資料規定之設計值放大,在β<1時(圖24之情形)較設計值縮小。 The dimension of the width direction of the pattern drawn along the drawing line is larger than the design value specified by the drawing data when β> 1, and smaller than the design value when β <1 (in the case of FIG. 24).

在上述圖23之電路構成,就系統時脈SQ之脈衝數Nck次之計數分別反覆執行使在完成脈衝訊號b產生後一刻所作之系統時脈SQ之一個脈衝wp之脈衝間隔Δwp變化時間ΔTd動作。此外,圖23之電路構成之情形,若設預設定電路206在內部儲存之標準值Ns0為20、從外部設定之預設定值Dsb為零,則不論有無產生完成脈衝訊號b,既定值ΔNs維持20(Y方向之描繪倍率未修正之狀態)。又,由於設增倍時脈訊號CKs之頻率為基本時脈訊號CKL之頻率之20倍,因此設既定值ΔNs為20之情形,將預設定值Dsb設定成+1(或-1),則既定值ΔNs,每當產生完成脈衝訊號b時,被覆寫成20,21,22,‧‧‧(或20,19,18‧‧‧)般地增加(或減少)。再者,增倍時脈訊號CKs之一個脈衝相當於標準之脈衝間隔Δwp(脈衝間隔距離CXs)之1/20(5%),因此若預設定值Dsb改變±1,則二個連續之點光之重疊之比例 以5%單位改變。 In the circuit configuration of FIG. 23 described above, the number of pulses Nck of the system clock SQ is repeatedly executed so that the pulse interval Δwp change time ΔTd of one pulse wp of the system clock SQ made immediately after the completion of the pulse signal b is generated. . In addition, in the case of the circuit configuration of FIG. 23, if the standard value Ns 0 stored internally by the preset circuit 206 is 20 and the preset value Dsb set from the outside is zero, the preset value b is set regardless of the completion pulse signal b. ΔNs is maintained at 20 (the drawing magnification in the Y direction is not corrected). In addition, since the frequency of the doubled clock signal CKs is set to 20 times the frequency of the basic clock signal CKL, the preset value ΔNs is set to 20, and the preset value Dsb is set to +1 (or -1). Then, the predetermined value ΔNs is overwritten (or decreased) as 20,21,22, ‧‧‧ (or 20,19,18‧‧‧) when the completion pulse signal b is generated. Furthermore, one pulse of the doubled clock signal CKs is equivalent to 1/20 (5%) of the standard pulse interval Δwp (pulse interval distance CXs). Therefore, if the preset value Dsb is changed by ± 1, two consecutive The proportion of overlapping points of light changes by 5%.

如上述,回應此種脈衝間隔Δwp部分増減之系統時脈SQ而從脈衝雷射之光源裝置CNT輸出之脈衝光束,係對描繪單元UW1~UW5之各個共通的供應,因此,以描繪線LL1~LL5之各個描繪之圖案會於Y方向以相同比率伸縮。因此,如圖12(或圖11)所說明般,為維持於Y方向相鄰之描繪線間之接合精度,係修正描繪時序,以使描繪線LL1~LL5各個之描繪開始位置OC1~OC5(或描繪結束位置EC1~EC5)往Y方向移動。 As described above, the pulsed beam output from the pulsed laser light source device CNT in response to the system clock SQ that is partially decremented in the pulse interval Δwp is a common supply to each of the drawing units UW1 to UW5. Therefore, the drawing lines LL1 to Each of the drawn patterns of LL5 will expand and contract at the same rate in the Y direction. Therefore, as illustrated in FIG. 12 (or FIG. 11), in order to maintain the joining accuracy between adjacent drawing lines in the Y direction, the drawing timing is modified so that the drawing start positions OC1 to OC5 of each of the drawing lines LL1 to LL5 ( Or the drawing end positions EC1 to EC5) are moved in the Y direction.

使系統時脈SQ之脈衝間隔Δwp部分地可變之電路構成之例,除了圖23、圖24所示般使延遲時間Td1,Td2數位地可變之方式外,亦可為類比地可變之構成。又,亦可為每當計數器電路208在對系統時脈SQ進行計數至預設定值Dsb(脈衝數Nck)為止時修正之一處之脈衝間隔Δwp’相對於標準之脈衝間隔Δwp增減例如1%之些微值之構成。此情形,在沿著掃描線之長度LBL之點光之一次掃描中,只要依據必要之倍率修正量改變將標準之脈衝間隔Δwp修正成脈衝間隔Δwp’之部位之數即可。例如,若設修正之部位之數為100,則在點光之一次掃描描繪之圖案在Y方向之尺寸增減相當於脈衝間隔Δwp之量。 An example of a circuit configuration in which the pulse interval Δwp of the system clock SQ is partially variable is not limited to digitally changing the delay times Td 1 and Td 2 as shown in FIGS. 23 and 24. Makeup change. In addition, the pulse interval Δwp 'at one of the corrections every time the counter circuit 208 counts the system clock SQ to the preset value Dsb (the number of pulses Nck) may be increased or decreased from the standard pulse interval Δwp, for example. The composition of a slight value of 1%. In this case, in one scan of the spot light along the length LBL of the scanning line, the number of locations where the standard pulse interval Δwp is corrected to the pulse interval Δwp 'may be changed according to the necessary magnification correction amount. For example, if the number of corrected parts is set to 100, the size of the pattern drawn in one scan of the spot light in the Y direction increases or decreases by an amount equivalent to the pulse interval Δwp.

再者,圖4中所示之光偏向器(AOM)81之ON/OFF切換,雖係回應作為描繪資料送出之串列位元列(位元值「0」或「1」之排列)進行,該位元值之送出,可與脈衝間隔Δwp部分増減之系統時脈SQ之脈衝訊號wp(圖22)同步。具體而言,在產生1個脈衝訊號wp致產生下1個脈衝訊號wp為止之期間,將1個位元值送出至光偏向器(AOM)81之驅動電路,甘味元值為「1」、而前1個位元值為「0」時,將光偏向器(AOM) 81從OFF狀態切換為ON狀態即可。 Furthermore, the ON / OFF switching of the light deflector (AOM) 81 shown in FIG. 4 is performed in response to a serial bit string (an array of bit values "0" or "1") sent as drawing data. The sending of this bit value can be synchronized with the pulse signal wp (Fig. 22) of the system clock SQ which is partially reduced by the pulse interval Δwp. Specifically, during the period from the generation of one pulse signal wp to the generation of the next pulse signal wp, a bit value is sent to the drive circuit of the optical deflector (AOM) 81, and the sweetness value is "1", When the first bit value is "0", the light deflector (AOM) 81 can be switched from OFF to ON.

控制部16,可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及可檢測旋轉圓筒DR兩端部之偏移之變位計YN1、YN2、YN3、YN4所檢測之資訊,調整以奇數號及偶數號描繪單元UW1~UW5進行之Y方向之描繪位置,以抵銷因旋轉圓筒DR之旋轉偏移所產生之Y方向誤差。又,控制部16,可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及可檢測旋轉圓筒DR兩端部之偏移之變位計YN1、YN2、YN3、YN4所檢測之資訊,變更以奇數號及偶數號描繪單元UW1~UW5進行之Y方向之長度(描繪線之長度LBL),以抵銷因旋轉圓筒DR之旋轉偏移所產生之Y方向之誤差。 The control unit 16 can adjust the adjustment information (calibration information) according to the arrangement state corresponding to the plurality of drawing lines LL1 to LL5 or the mutual arrangement errors and the displacement gauges YN1, YN2, which can detect the offset of the two ends of the rotating cylinder DR. The information detected by YN3 and YN4 adjusts the drawing position in the Y direction by the drawing units UW1 to UW5 with odd and even numbers to offset the Y direction error caused by the rotation offset of the rotating cylinder DR. In addition, the control unit 16 can adjust the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement errors and the displacement meter YN1 that can detect the offset of the two ends of the rotating cylinder DR. The information detected by YN2, YN3, and YN4 changes the length in the Y direction (length of the drawing line LBL) performed by drawing units UW1 to UW5 with odd and even numbers to offset the rotation offset caused by the rotation of the DR of the rotating cylinder. Y-direction error.

又,控制部16,可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以對準顯微鏡AM1、AM2檢測之資訊,調整以奇數號及偶數號描繪單元UW1~UW5進行之X方向或Y方向之描繪位置,以抵銷基板P之X方向或Y方向之誤差。 In addition, the control unit 16 can adjust the odd and even numbers according to the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement errors and the information detected by the alignment microscopes AM1 and AM2. The drawing positions in the X direction or the Y direction by the drawing units UW1 to UW5 are used to offset the errors in the X direction or the Y direction of the substrate P.

第1實施形態之曝光裝置EX,如上述般包含以來自複數個描繪單元UW1~UW5各個之描繪光束LB,以包含形成在基板P上之複數個描繪線LL1~LL5之描繪面內之既定點旋轉軸I為中心,於前述描繪面內相對第1光學平台23使第2光學平台25位移之作為位移修正機構之移動機構24。藉由對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),複數個描繪線LL1~LL5之全體對X方向及Y方向中之至少1者有誤差時,控制部16,可對移動機構24之驅動部進行驅動控 制,使第2光學平台25往X方向及Y方向之至少一方位移抵消誤差之位移量。 The exposure apparatus EX of the first embodiment includes the drawing light beam LB from each of the plurality of drawing units UW1 to UW5 as described above, and includes a predetermined point in the drawing plane including a plurality of drawing lines LL1 to LL5 formed on the substrate P. The rotation mechanism I is a movement mechanism 24 serving as a displacement correction mechanism for displacing the second optical stage 25 with respect to the first optical stage 23 in the drawing plane as a center. When adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement errors is made, when the whole of the plurality of drawing lines LL1 to LL5 has an error in at least one of the X and Y directions, The control section 16 can drive and control the driving section of the moving mechanism 24 Control so that the displacement of the second optical stage 25 in at least one of the X direction and the Y direction cancels the displacement amount of the error.

當使第2光學平台25往X方向及Y方向之至少一方位移時,圖6所示之第4反射鏡59即往X方向或Y方向變位該位移量。特別是第4反射鏡59之Y方向變位,在使來自第3反射鏡58之描繪光束LB反射向+Y方向時,使之往Z方向位移。因此,藉由第1光學系41中之光束位移機構44,修正該往Z方向之位移。據此,對第4反射鏡59之後之第2光學系42及第3光學系43,即能維持光束LB通過正確的光路。 When the second optical stage 25 is displaced in at least one of the X direction and the Y direction, the fourth mirror 59 shown in FIG. 6 is displaced by the displacement amount in the X direction or the Y direction. In particular, the fourth mirror 59 is displaced in the Y direction, and when the drawing light beam LB from the third mirror 58 is reflected in the + Y direction, it is displaced in the Z direction. Therefore, the beam displacement mechanism 44 in the first optical system 41 corrects the displacement in the Z direction. As a result, the second optical system 42 and the third optical system 43 after the fourth mirror 59 can maintain the light beam LB through the correct optical path.

又,於第1實施形態之曝光裝置EX中,因對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),而使複數個描繪線LL1~LL5對X方向及Y方向之至少1個有誤差時,控制部16,可對移動機構24之驅動部進行驅動控制,使形成在基板P上之描繪線LL1~LL5往X方向或Y方向微幅移動抵消誤差之位移量。 In addition, in the exposure apparatus EX of the first embodiment, the plurality of drawing lines LL1 to LL5 are aligned with the X direction due to adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or mutual arrangement errors. When there is an error in at least one of the Y direction, the control unit 16 can drive and control the driving unit of the moving mechanism 24 so that the drawing lines LL1 to LL5 formed on the substrate P move slightly in the X direction or the Y direction to offset the error. Of displacement.

再者,第1實施形態之曝光裝置EX中,因對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),使複數個描繪線LL1~LL5中之奇數號或偶數號描繪線對X方向及Y方向之至少1個有誤差時,控制部16,可以抵消誤差之位移量之方式,對光束位移機構45進行驅動控制,以使形成在基板P上之偶數號描繪線LL2、LL4往X方向或Y方向微幅移動,以微調與形成在基板P上之奇數號描繪線LL1、LL3、LL5之相對位置關係。 Furthermore, in the exposure apparatus EX of the first embodiment, the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement errors makes the odd numbers in the plurality of drawing lines LL1 to LL5. When there is an error in at least one of the X- and Y-directions of the even-numbered drawing line pair, the control unit 16 can drive and control the beam displacement mechanism 45 in such a manner as to offset the displacement amount of the error so that the even number formed on the substrate P The numbered drawing lines LL2 and LL4 move slightly in the X direction or the Y direction to fine-tune the relative positional relationship with the odd numbered drawing lines LL1, LL3, and LL5 formed on the substrate P.

又,控制部16,亦可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以變位計YN1、YN2、 YN3、YN4或對準顯微鏡AM1、AM2檢測之資訊,調整描繪單元UW1~UW5之Y倍率。例如,f-θ透鏡系85所含之遠心f-θ透鏡之像高與入射角成正比。因此,僅調整描繪單元UW1之Y倍率時,控制部16,可根據調整資訊(校準資訊)及以變位計YN1、YN2、YN3、YN4或對準顯微鏡AM1、AM2檢測之資訊,個別調整f-θ透鏡系85之焦點距離f,據以調整Y倍率。此整調整機構中,可組合例如用以進行倍率修正之彎板(bending plate)、遠心f-θ透鏡之倍率修正機構、用以進行位移調整之halving(可傾斜之平行平板玻璃)中之任一以上。此外,將以一定旋轉速度旋轉之旋轉多面鏡97之旋轉速度作成可略為改變,即可使與系統時脈SQ同步描繪之各點光SP(脈衝光)之間隔距離CXs略為改變(將相鄰點光彼此之重疊量略微錯開),結果亦能調整Y倍率。 In addition, the control unit 16 may also adjust the adjustment information (calibration information) corresponding to the arrangement states of the plurality of drawing lines LL1 to LL5 or the mutual arrangement errors, and the displacement indicators YN1, YN2, Adjust the Y magnification of the drawing units UW1 ~ UW5 with the information detected by YN3, YN4 or alignment microscope AM1 and AM2. For example, the image height of the telecentric f-θ lens included in the f-θ lens system 85 is proportional to the angle of incidence. Therefore, when adjusting only the Y magnification of the drawing unit UW1, the control unit 16 can individually adjust f according to the adjustment information (calibration information) and the displacement measurement YN1, YN2, YN3, YN4 or the information detected by the alignment microscope AM1, AM2. The -theta lens system has a focal length f of 85 to adjust the Y magnification. In this whole adjustment mechanism, for example, any of a bending plate for magnification correction, a magnification correction mechanism for a telecentric f-θ lens, and a halving (tiltable parallel plate glass) for displacement adjustment can be combined. More than one. In addition, the rotation speed of the rotating polygon mirror 97 rotating at a certain rotation speed can be slightly changed, so that the interval distance CXs of each point light SP (pulse light) synchronized with the system clock SQ can be slightly changed (the adjacent The overlapping amount of the point lights is slightly staggered), and the Y magnification can also be adjusted as a result.

第1實施形態之曝光裝置EX,如上述般包含以來自複數個描繪單元UW1~UW5各個之描繪光束LB,以包含形成在基板P上之複數個描繪線LL1~LL5之描繪面內之既定點旋轉軸I為中心,於前述描繪面內相對第1光學平台23使第2光學平台25位移之作為位移修正機構之移動機構24。因對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),使複數個描繪線LL1~LL5相對Y方向有角度誤差,控制部16,可以對移動機構24之驅動部進行驅動控制,以使第2光學平台25旋轉抵銷角度誤差之旋轉量。 The exposure apparatus EX of the first embodiment includes the drawing light beam LB from each of the plurality of drawing units UW1 to UW5 as described above, and includes a predetermined point in the drawing plane including a plurality of drawing lines LL1 to LL5 formed on the substrate P. The rotation mechanism I is a movement mechanism 24 serving as a displacement correction mechanism for displacing the second optical stage 25 with respect to the first optical stage 23 in the drawing plane as a center. Due to the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement error, the plurality of drawing lines LL1 to LL5 have an angular error with respect to the Y direction. The control unit 16 can The driving unit performs drive control so that the second optical table 25 is rotated to offset the rotation amount of the angular error.

又,當產生需對各描繪單元UW1~UW5個別的進行旋轉修正時,可藉由使圖8所示之f-θ透鏡系85與第2柱面透鏡86繞光軸AXf微幅旋轉,據以使各描繪線LL1~LL5於基板P上個別的微幅旋轉(傾斜)。 以旋轉多面鏡97掃描之光束LB,於非掃描方向係沿柱面透鏡86之母線成像(聚光),因此藉由柱面透鏡86繞光軸AXf之旋轉,可使各描繪線LL1~LL5旋轉(傾斜)。 In addition, when it is necessary to perform rotation correction on each of the drawing units UW1 to UW5, the f-θ lens system 85 and the second cylindrical lens 86 shown in FIG. 8 can be rotated slightly around the optical axis AXf. Each of the drawing lines LL1 to LL5 is individually rotated (inclined) on the substrate P slightly. The light beam LB scanned by the rotating polygon mirror 97 is imaged (condensed) along the generatrix of the cylindrical lens 86 in the non-scanning direction. Therefore, by rotating the cylindrical lens 86 about the optical axis AXf, each drawing line LL1 ~ LL5 can be made. Rotate (tilt).

第1實施形態之曝光裝置EX,只要處理上述步驟S4之控制裝置進行之描繪位置調整之處理之至少1種即可。又,第1實施形態之曝光裝置EX,亦可組合上述步驟S4之控制裝置進行之描繪位置調整之處理以進行處理。 The exposure apparatus EX of the first embodiment only needs to process at least one of the processes of the adjustment of the drawing position performed by the control device in step S4. In addition, the exposure apparatus EX of the first embodiment may be combined with the processing of the drawing position adjustment performed by the control device of step S4 described above.

藉由以上說明之基板處理裝置之調整方法,於第1實施形態之曝光裝置EX,可省去(無需)用以抑制於基板P之寬度方向(Y方向)相鄰之圖案PT1~PT5彼此之接合誤差的測試曝光,或大幅減少其次數。因此,第1實施形態之曝光裝置EX,可縮短測試曝光、乾燥及顯影製程、曝光結果之確認作業等需耗費時間之校準作業。此外,第1實施形態之曝光裝置EX,可抑制因測試曝光而反饋之次數分之基板P的浪費。第1實施形態之曝光裝置EX,可更早的取得對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)。第1實施形態之曝光裝置EX,可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊),預先進行修正,據以容易的修正在X方向或Y方向之位移、旋轉、倍率等之各成分。又,第1實施形態之曝光裝置EX,可提高在基板P上重疊曝光之精度。 With the method for adjusting the substrate processing apparatus described above, in the exposure apparatus EX of the first embodiment, it is possible to eliminate (not necessary) the pattern PT1 to PT5 adjacent to each other in the width direction (Y direction) of the substrate P. Test exposure for joint error, or significantly reduce it. Therefore, the exposure device EX of the first embodiment can shorten the time-consuming calibration operations such as test exposure, drying and development processes, and confirmation of exposure results. In addition, the exposure device EX of the first embodiment can suppress the waste of the substrate P in the number of times of feedback due to the test exposure. The exposure device EX of the first embodiment can obtain adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement errors earlier. The exposure device EX of the first embodiment can be corrected in advance according to the arrangement information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement errors, and the correction can be easily performed in the X direction or the Y direction. The components of displacement, rotation, magnification, etc. In addition, the exposure apparatus EX of the first embodiment can improve the accuracy of overlapping exposure on the substrate P.

又,第1實施形態之曝光裝置EX,雖係以光偏向器81包含聲光元件,以旋轉多面鏡97進行描繪光束LB之點掃描為例作了說明,但除點掃描之外,亦可以是使用DMD(Digital Micro mirror Device)或SLM (Spatial light modulator:空間光調變器)描繪圖案之方式。 The exposure device EX of the first embodiment is described by taking the light deflector 81 including an acousto-optic element and the point scan of the drawing beam LB as an example by rotating the polygon mirror 97 as an example. Use DMD (Digital Micro mirror Device) or SLM (Spatial light modulator) The way of drawing patterns.

〔第2實施形態〕 [Second Embodiment]

其次,說明第2實施形態之曝光裝置EX。又,於第2實施形態,為扁免與第1實施形態重複之記載,僅針對與第1實施形態相異之部分進行說明,針對與第1實施形態相同之構成要素係賦予與第1實施形態相同符號加以說明。 Next, an exposure apparatus EX according to a second embodiment will be described. In addition, in the second embodiment, in order to avoid the duplicated description of the first embodiment, only the parts that are different from the first embodiment will be described, and the same constituent elements as the first embodiment will be given to the first embodiment. The same symbols are used for explanation.

第2實施形態之曝光裝置EX中,校準檢測系31之光電感測器31Cs並非檢測基準圖案(亦可作為基準標記加以利用)RMP而是檢測基板P上之對準標記Ks1~Ks3之反射光(散射光)。對準標記Ks1~Ks3係配置在通過複數個描繪單元UW1~UW5之各描繪線LL1~LL5之任一者之Y方向之基板P上之位置。當描繪光束LB之點光SP掃描到對準標記Ks1~Ks3時,於對準標記Ks1~Ks3反射之散射光即被光電感測器31Cs於亮視野或暗視野受光。 In the exposure apparatus EX of the second embodiment, the photo sensor 31Cs of the calibration detection system 31 does not detect the reference pattern (also can be used as a reference mark) RMP, but detects the reflected light of the alignment marks Ks1 to Ks3 on the substrate P. (Scattered light). The alignment marks Ks1 to Ks3 are arranged on the substrate P in the Y direction passing any one of the drawing lines LL1 to LL5 of the plurality of drawing units UW1 to UW5. When the spot light SP depicting the light beam LB scans the alignment marks Ks1 ~ Ks3, the scattered light reflected by the alignment marks Ks1 ~ Ks3 is received by the photo sensor 31Cs in a bright field or a dark field.

控制部16根據從光電感測器31Cs輸出之訊號,檢測對準標記Ks1~Ks3之邊緣位置。並與第1實施形態同樣的,控制部16可從以光電感測器31Cs檢測之檢測訊號,求出對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)。 The control unit 16 detects the edge positions of the alignment marks Ks1 to Ks3 based on a signal output from the photo sensor 31Cs. In the same manner as in the first embodiment, the control unit 16 can obtain the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 from the detection signals detected by the optical sensor 31Cs. .

又,控制部16,可根據對應複數個描繪線LL1~LL5之配置狀態或彼此之配置誤差之調整資訊(校準資訊)及以對準顯微鏡AM1、AM2檢測之資訊,調整奇數號及偶數號描繪單元UW1~UW5之X方向或Y方向之描繪位置,以抵銷基板P之X方向或Y方向之誤差。當描繪光束LB之點光SP投射於對準標記Ks1~Ks3時,對準標記Ks1~Ks3上之感光層即 感光,有可能於之後之製程中對準標記Ks1~Ks3潰散。因此,最好是能設置複數行對準標記Ks1~Ks3,對準顯微鏡AM1、AM2則讀取未因曝光潰散之對準標記Ks1~Ks3。 In addition, the control unit 16 can adjust the drawing of the odd and even numbers according to the adjustment information (calibration information) corresponding to the arrangement state of the plurality of drawing lines LL1 to LL5 or the mutual arrangement errors and the information detected by the alignment microscopes AM1 and AM2. The drawing position of the X direction or the Y direction of the units UW1 to UW5 is to offset the error of the X direction or the Y direction of the substrate P. When the spot light SP depicting the light beam LB is projected on the alignment marks Ks1 ~ Ks3, the photosensitive layer on the alignment marks Ks1 ~ Ks3 is Photosensitive, it is possible that the alignment marks Ks1 ~ Ks3 will collapse in the subsequent process. Therefore, it is best to set a plurality of rows of alignment marks Ks1 to Ks3, and the alignment microscopes AM1 and AM2 read the alignment marks Ks1 to Ks3 that have not been scattered by exposure.

因此,第2實施形態之曝光裝置EX,可於圖案描繪用資料中包含,可因曝光潰散之對準標記Ks1~Ks3之近旁以描繪光束LB之點光SP掃描,而在不希望因曝光潰散之對準標記Ks1~Ks3之近旁則以點光SP不會照射之方式,進行光偏向器(AOM)81之ON/OFF的資料。據此,可在以描繪光束LB進行曝光之同時、大致即時取得校準資訊,且亦能讀取對準標記Ks1~Ks3(基板P之位置)。 Therefore, the exposure device EX of the second embodiment may be included in the pattern drawing data, and the spot light SP scanning for drawing the light beam LB may be performed near the alignment marks Ks1 to Ks3 which are scattered due to exposure. Near the alignment marks Ks1 ~ Ks3, the ON / OFF data of the light deflector (AOM) 81 is performed in a way that the spot light SP will not be irradiated. According to this, it is possible to obtain the calibration information at substantially the same time as the exposure with the drawing beam LB, and it is also possible to read the alignment marks Ks1 to Ks3 (the position of the substrate P).

第2實施形態之曝光裝置EX,與第1實施形態之曝光裝置EX同樣的,可省去用以抑制接合誤差之測試曝光、或大幅減少其次數。除此之外,於第2實施形態之曝光裝置EX,可在基板P曝光圖案之同時,測量對應複數個描繪線LL1~LL5之配置狀態或彼此之配置關係等之誤差資訊,及早(大致即時)取得與之對應之調整資訊(校準資訊)。因此,第2實施形態之曝光裝置EX,可根據提早測量之誤差資訊、或調整資訊(校準資訊),一邊進行元件圖案之曝光、一邊逐次進行為保持既定精度之修正及調整,而能容易的抑制於多描繪頭方式中成問題之於X方向或Y方向之位移誤差、旋轉誤差、倍率誤差等各誤差成分之描繪單元間接合精度之降低。據此,第2實施形態之曝光裝置EX,能將基板P上重疊曝光時之重疊精度維持於高狀態。 The exposure apparatus EX of the second embodiment is the same as the exposure apparatus EX of the first embodiment, and it is possible to omit the test exposure for suppressing the joint error or to reduce the number of times significantly. In addition, in the exposure device EX of the second embodiment, it is possible to measure the error information corresponding to the arrangement status of the plurality of drawing lines LL1 to LL5 or the arrangement relationship among each other while exposing the pattern on the substrate P. ) Obtain the corresponding adjustment information (calibration information). Therefore, according to the exposure device EX of the second embodiment, it is possible to easily perform corrections and adjustments in order to maintain a predetermined accuracy while exposing the element pattern based on the error information or adjustment information (calibration information) measured early. In the multi-drawing head method, it is possible to suppress the decrease in the joint accuracy between the drawing elements such as displacement errors, rotation errors, and magnification errors in the X direction or the Y direction, which is a problem. According to this, the exposure apparatus EX of the second embodiment can maintain the superimposition accuracy at the time of superimposed exposure on the substrate P.

<元件製造方法> <Element Manufacturing Method>

其次,參照圖25,說明元件製造方法。圖25係顯示各實施形態之元件 製造方法的流程圖。 Next, a device manufacturing method will be described with reference to FIG. 25. Fig. 25 shows elements of each embodiment Flow chart of manufacturing method.

圖25所示之元件製造方法,首先,係進行例如使用有機EL等自發光元件形成之顯示面板之功能、性能設計,以CAD等設計所需之電路圖案及配線圖案(步驟S201)。並準備捲繞有作為顯示面板之基材之可撓性基板P(樹脂薄膜、金屬箔膜、塑膠等)之供應用捲筒(步驟S202)。又,於此步驟S202中準備之捲筒狀基板P,可以是視需要將其表面改質者、或事前已形成底層(例如透過印記(imprint)方式之微小凹凸)者、或預先積層有光感應性之功能膜或透明膜(絶緣材料)者 The element manufacturing method shown in FIG. 25 is to first perform a function and performance design of a display panel formed using a self-luminous element such as an organic EL, and design a circuit pattern and a wiring pattern required by CAD or the like (step S201). A roll for supply of a flexible substrate P (resin film, metal foil film, plastic, etc.) as a base material of the display panel is wound up (step S202). In addition, the roll-shaped substrate P prepared in this step S202 may be one whose surface has been modified as required, or which has been previously formed with a bottom layer (for example, through minute irregularities of an imprint method), or has been laminated with light in advance. Inductive functional film or transparent film (insulating material)

接著,於基板P上形成構成顯示面板元件以電極或配線、絶緣膜、TFT(薄膜半導體)等構成之底板層,並以積層於該底板之方式形成以有機EL等自發光元件構成之發光層(顯示像素部)(步驟S203)。於此步驟S203中,亦包含使用於先前各實施形態說明之曝光裝置EX,對光阻劑層進行曝光使之顯影的習知微影製程、對取代光阻劑而塗有感光性矽烷耦合劑之基板P進行圖案曝光以將表面改質為親撥水性以形成圖案的曝光製程、對光感應性之觸媒層進行圖案曝光以賦予選擇性之鍍敷還元性並以無電解鍍敷法形成金屬膜圖案(配線、電極等)的濕式製程、或以含有銀奈米粒子之導電性墨水等描繪圖案的印刷製程等之處理。 Next, a substrate layer including electrodes or wiring, an insulating film, and a TFT (thin-film semiconductor) is formed on the substrate P, and a light-emitting layer composed of a self-light-emitting element such as an organic EL is formed on the substrate. (Display pixel portion) (Step S203). In this step S203, the conventional lithography process for exposing and developing the photoresist layer using the exposure device EX described in the previous embodiments is also included, and a photosensitive silane coupling agent is applied instead of the photoresist. The substrate P is subjected to pattern exposure to modify the surface to be water-repellent to form a pattern exposure process, pattern exposure to a light-sensitive catalyst layer to impart selective plating restitution and is formed by an electroless plating method. Wet processes of metal film patterns (wiring, electrodes, etc.), or printing processes that draw patterns with conductive ink containing silver nano particles, etc.

接著,針對以捲筒方式於長條基板P上連續製造之每一顯示面板元件切割基板P、或於各顯示面板元件表面貼合保護膜(耐環境障壁層)或彩色濾光片膜等,組裝元件(步驟S204)。接著,進行顯示面板元件是否可正常作動、或是否滿足所欲性能及特性之檢查步驟(步驟S205)。經由以上方式,即能製造顯示面板(可撓性顯示器)。又,作成可撓性長條片狀基 板之電子元件不限於顯示面板,亦可以是做為用以連接搭載於汽車或電車等之各種電子零件間之導線(配線帶)之可撓性配線網。 Next, for each display panel element that is continuously manufactured on the long substrate P by a roll method, the substrate P is cut, or a protective film (environmental barrier layer) or a color filter film is laminated on the surface of each display panel element. The components are assembled (step S204). Next, a step of checking whether the display panel element can operate normally or whether the desired performance and characteristics are satisfied is performed (step S205). Through the above method, a display panel (flexible display) can be manufactured. Also, a flexible long sheet-like base is made The electronic components of the board are not limited to the display panel, and may also be a flexible wiring network for connecting wires (wiring tapes) between various electronic components mounted on automobiles or trams.

Claims (14)

一種基板處理裝置,具備:搬送裝置,將長條片狀基板之一部分一邊以具有從中心線以一定半徑彎曲之圓筒狀外周面之旋轉圓筒支承一邊藉由繞該中心線之該旋轉圓筒之旋轉使該基板往該長條方向移動;描繪裝置,包含對以該外周面支承之該基板一邊投射已調變之描繪束、一邊在與該長條方向交叉之該基板之寬度方向於較該基板之寬度窄之範圍掃描並沿著以該掃描所得之描繪線描繪既定圖案之複數個描繪單元,以該複數個描繪單元之各描繪線描繪於該基板上之圖案彼此隨著該基板往長條方向之移動而於該基板之寬度方向接合之方式,將該複數個描繪單元配置於該基板之寬度方向;移動測量裝置,包含具有從該旋轉圓筒之中心線於既定半徑之周方向形成之刻度且被設置成與該旋轉圓筒一起旋轉之標尺部、及與該標尺部之刻度對向配置且用以輸出對應該搬送裝置進行之該基板之移動量或移動位置之移動資訊之編碼器讀頭;以及控制部,預先儲存關於藉由該複數個描繪單元之各個形成在該基板上之該描繪線彼此之位置關係之校準資訊,且根據該校準資訊與從該移動測量裝置輸出之該移動資訊,調整藉由該複數個描繪單元之各個之該描繪束形成在該基板上之圖案之描繪位置。A substrate processing apparatus includes a conveying device that supports a portion of a long sheet-like substrate by a rotating cylinder having a cylindrical outer peripheral surface bent at a certain radius from a center line while supporting the rotating circle around the center line. The rotation of the cylinder causes the substrate to move in the strip direction; the drawing device includes projecting the modulated drawing beam on the substrate supported by the outer peripheral surface, and in the width direction of the substrate crossing the strip direction in Scan a narrower range than the width of the substrate and draw a plurality of drawing units along a predetermined pattern along the drawing lines obtained by the scanning. The patterns drawn on the substrate by the drawing lines of the plurality of drawing units follow each other along the substrate. In a manner of moving in the long direction and joining in the width direction of the substrate, the plurality of drawing units are arranged in the width direction of the substrate; the moving measuring device includes a circle having a predetermined radius from the center line of the rotating cylinder. The scale formed in the direction is set to rotate along with the rotating cylinder, and the scale is arranged opposite to the scale of the scale and is used for output correspondence. The encoder read head of the movement amount of the substrate or the movement information of the movement position performed by the transfer device; and a control unit that stores in advance the positional relationship of the drawing lines formed on the substrate by each of the plurality of drawing units. Calibration information, and adjusting a drawing position of a pattern formed on the substrate by the drawing beam of each of the plurality of drawing units according to the calibration information and the movement information output from the mobile measurement device. 如申請專利範圍第1項之基板處理裝置,其中,該複數個描繪單元係配置成在將於該基板上描繪彼此接合之圖案的相鄰描繪單元之一方設為奇數號、另一方設為偶數號時,該奇數號描繪單元各個之奇數號描繪線、與該偶數號描繪單元各個之偶數號描繪線,以一定之角度間隔位於該旋轉圓筒外周面之周方向。For example, the substrate processing apparatus of the first patent application range, wherein the plurality of drawing units are arranged such that one of adjacent drawing units that draw a pattern joining each other on the substrate is set to an odd number, and the other is set to an even number. At the time of numbering, the odd-numbered drawing lines of each of the odd-numbered drawing units and the even-numbered drawing lines of each of the even-numbered drawing units are located at a certain angular interval in the circumferential direction of the outer peripheral surface of the rotating cylinder. 如申請專利範圍第2項之基板處理裝置,其中,該奇數號描繪線之各個係以在該基板上與該旋轉圓筒之該中心線大致平行之方式,於該基板之寬度方向配置成一行,該偶數號描繪線之各個係以在該基板上與該旋轉圓筒之該中心線大致平行之方式,於該基板之寬度方向配置成一行。For example, the substrate processing apparatus of the second patent application range, wherein each of the odd-numbered drawing lines is arranged in a line on the substrate in a direction substantially parallel to the center line of the rotating cylinder. Each of the even-numbered drawing lines is arranged in a line in the width direction of the substrate in such a manner that the center line of the rotating cylinder is substantially parallel to the substrate. 如申請專利範圍第3項之基板處理裝置,其中,該移動測量裝置之該編碼器讀頭,包含:第1編碼器讀頭,在與從該旋轉圓筒之該中心線觀察配置成該一行之該奇數號描繪線時之第1方位相同之方向與該標尺部之刻度對向配置;以及第2編碼器讀頭,在與從該旋轉圓筒之該中心線觀察配置成該一行之該偶數號描繪線時之第2方位相同之方向與該標尺部之刻度對向配置。For example, the substrate processing device of the third scope of the patent application, wherein the encoder reading head of the mobile measuring device includes the first encoder reading head, which is arranged in a row when viewed from the centerline of the rotating cylinder. The odd-numbered line is drawn in the same direction as the first azimuth and is opposite to the scale of the scale; and the second encoder read head is arranged in the same row as the one viewed from the centerline of the rotating cylinder. The second direction when the even number draws the line is the same direction as the scale of the scale. 如申請專利範圍第4項之基板處理裝置,其中,該第1方位與該第2方位係設定成該第1編碼器讀頭與該第2編碼器讀頭以空間上非干涉狀態設置在該標尺部之刻度周圍之角度範圍。For example, the substrate processing device of the fourth scope of the patent application, wherein the first position and the second position are set so that the first encoder read head and the second encoder read head are disposed in the space in a non-interfering state. The angular range around the scale of the ruler. 如申請專利範圍第1至5項中任一項之基板處理裝置,其進一步具備基板圖案檢測裝置,該基板圖案檢測裝置包含用以檢測在該長條方向離散或連續地形成在該基板上之特定圖案之檢測探針,以該檢測探針之該基板上之檢測區域相較該複數個描繪單元之各個之該描繪線設定在該基板之搬送方向之上游側之方式配置在該旋轉圓筒周圍;該控制部,除了該校準資訊及從該移動測量裝置輸出之該移動資訊外,亦根據在該檢測探針之該檢測區域檢測之該特定圖案之位置資訊,執行該描繪束之圖案描繪位置之調整。For example, the substrate processing apparatus according to any one of claims 1 to 5 further includes a substrate pattern detection apparatus, which includes a substrate pattern detection apparatus for detecting discretely or continuously formed on the substrate in the strip direction. A detection probe with a specific pattern is arranged on the rotating cylinder in such a manner that the detection area on the substrate of the detection probe is set on the upstream side of the substrate in the conveying direction compared to the drawing line of each of the plurality of drawing units. Surrounding; the control section, in addition to the calibration information and the mobile information output from the mobile measurement device, also performs pattern drawing of the drawing beam based on the position information of the specific pattern detected in the detection area of the detection probe Position adjustment. 如申請專利範圍第1至5項中任一項之基板處理裝置,其中,該控制部進行之該描繪位置之調整包含變更該搬送裝置進行之該基板之移動速度之處理。For example, the substrate processing apparatus according to any one of claims 1 to 5, wherein the adjustment of the drawing position by the control unit includes a process of changing a moving speed of the substrate by the transporting apparatus. 如申請專利範圍第1至5項中任一項之基板處理裝置,其中,該控制部進行之該描繪位置之調整,包含變更該基板在該長條方向之每單位時間之移動距離與在該移動距離內所含之該描繪線之條數之關係之處理。For example, the substrate processing device according to any one of claims 1 to 5, wherein the adjustment of the drawing position by the control unit includes changing the moving distance per unit time of the substrate in the long direction and Processing of the relationship between the number of the drawn lines included in the moving distance. 如申請專利範圍第1至5項中任一項之基板處理裝置,其中,該描繪裝置進一步具備產生與系統時脈同步之紫外域之波長之脈衝光以作為該描繪束之脈衝光源;該控制部進行之該描繪位置之調整,包含在該描繪束沿著該描繪線掃描之期間部分地變更該系統時脈之週期之處理。For example, the substrate processing device according to any one of claims 1 to 5, wherein the drawing device is further provided with pulse light of a wavelength in an ultraviolet region synchronized with the system clock as the pulse light source of the drawing beam; the control The adjustment of the drawing position by the Ministry includes a process of partially changing the cycle of the system clock while the drawing beam is scanned along the drawing line. 如申請專利範圍第1至5項中任一項之基板處理裝置,其中,該控制部進行之該描繪位置之調整包含變更該描繪束之掃描所形成之該描繪線之長度之處理。For example, the substrate processing apparatus according to any one of claims 1 to 5, wherein the adjustment of the drawing position by the control unit includes a process of changing the length of the drawing line formed by scanning the drawing beam. 如申請專利範圍第1至5項中任一項之基板處理裝置,其中,從該複數個描繪單元之各個投射至該基板之該描繪束之各行進方向皆設定成朝向該旋轉圓筒之該中心線。For example, the substrate processing apparatus according to any one of claims 1 to 5, wherein each of the traveling directions of the drawing beam projected from each of the plurality of drawing units onto the substrate is set to face the rotating cylinder. Centerline. 如申請專利範圍第1至5項中任一項之基板處理裝置,其包含:平台,以既定位置關係保持該複數個描繪單元;以及旋轉機構,以包含藉由來自該複數個描繪單元之各個之描繪束形成在該基板上之該複數條描繪線之描繪面內之既定點為中心,使該平台在該描繪面內旋轉;該控制部進行之該描繪位置之調整包含使該平台旋轉之處理。For example, the substrate processing apparatus according to any one of claims 1 to 5 includes: a platform that holds the plurality of drawing units in a predetermined positional relationship; and a rotation mechanism that includes the data from each of the plurality of drawing units. The drawing beam formed on the substrate is centered on a predetermined point in the drawing plane of the plurality of drawing lines, so that the platform rotates in the drawing plane; the adjustment of the drawing position by the control unit includes rotating the platform. deal with. 如申請專利範圍第1至5項中任一項之基板處理裝置,其中,該複數個描繪單元之各個,進一步具備:旋轉多面鏡,使朝向該基板之該描繪束往一方向偏向掃描;f-θ透鏡,將以該旋轉多面鏡偏向掃描之描繪束導向該基板上之描繪線;以及柱面透鏡,設在該f-θ透鏡與該基板之間,具有與該描繪線延伸之方向大致平行之母線並在與該母線正交之方向聚光該描繪束。For example, the substrate processing device according to any one of claims 1 to 5, wherein each of the plurality of drawing units further includes: rotating a polygon mirror to scan the drawing beam toward the substrate in a direction; f a -θ lens, which directs the drawing beam scanned by the rotating polygon mirror toward the drawing line on the substrate; and a cylindrical lens, which is provided between the f-θ lens and the substrate and has a direction substantially extending from the drawing line The parallel buses converge the drawing beam in a direction orthogonal to the buses. 一種元件製造方法,包含:使如申請專利範圍第1至13項中任一項之基板處理裝置之該旋轉圓筒,以將形成有感光性機能層之具有可撓性之長條基板之一部分捲繞於該旋轉圓筒之方式,支承該長條基板之一部分,藉由該旋轉圓筒之旋轉將該基板以既定之速度往該長條方向搬送之動作;以及藉由圖案之描繪位置被該控制部調整後之該複數個描繪單元之各個,於該基板之該感光性機能層描繪電子元件之圖案之動作。A method for manufacturing a component, comprising: using the rotating cylinder of the substrate processing apparatus according to any one of claims 1 to 13 to apply a part of a flexible long substrate having a photosensitive functional layer formed thereon; The method of winding around the rotating cylinder supports a part of the long substrate, and the substrate is moved at a predetermined speed in the long direction by the rotation of the rotating cylinder; Each of the plurality of drawing units adjusted by the control unit draws a pattern of an electronic component on the photosensitive functional layer of the substrate.
TW104109884A 2014-04-01 2015-03-27 Substrate processing device and element manufacturing method TWI639064B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2014-075841 2014-04-01
JP2014075841 2014-04-01

Publications (2)

Publication Number Publication Date
TW201600941A TW201600941A (en) 2016-01-01
TWI639064B true TWI639064B (en) 2018-10-21

Family

ID=54240539

Family Applications (6)

Application Number Title Priority Date Filing Date
TW107127841A TWI674484B (en) 2014-04-01 2015-03-27 Substrate processing method
TW109101148A TWI709006B (en) 2014-04-01 2015-03-27 Pattern drawing device and pattern drawing method
TW107127840A TWI661280B (en) 2014-04-01 2015-03-27 Substrate processing method and substrate processing device
TW104109884A TWI639064B (en) 2014-04-01 2015-03-27 Substrate processing device and element manufacturing method
TW108135217A TWI695235B (en) 2014-04-01 2015-03-27 Pattern drawing device and element manufacturing method
TW108114726A TWI684836B (en) 2014-04-01 2015-03-27 Pattern drawing device

Family Applications Before (3)

Application Number Title Priority Date Filing Date
TW107127841A TWI674484B (en) 2014-04-01 2015-03-27 Substrate processing method
TW109101148A TWI709006B (en) 2014-04-01 2015-03-27 Pattern drawing device and pattern drawing method
TW107127840A TWI661280B (en) 2014-04-01 2015-03-27 Substrate processing method and substrate processing device

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW108135217A TWI695235B (en) 2014-04-01 2015-03-27 Pattern drawing device and element manufacturing method
TW108114726A TWI684836B (en) 2014-04-01 2015-03-27 Pattern drawing device

Country Status (6)

Country Link
JP (3) JP6597602B2 (en)
KR (2) KR102430139B1 (en)
CN (4) CN106133610B (en)
HK (3) HK1245417B (en)
TW (6) TWI674484B (en)
WO (1) WO2015152218A1 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015152217A1 (en) * 2014-04-01 2015-10-08 株式会社ニコン Substrate-processing apparatus, device manufacturing method, and method for adjusting substrate-processing apparatus
CN111781807B (en) * 2015-10-30 2024-01-12 株式会社尼康 Substrate processing apparatus and device manufacturing method
JP6607002B2 (en) * 2015-11-30 2019-11-20 株式会社ニコン Pattern drawing device
JP6690214B2 (en) * 2015-12-09 2020-04-28 株式会社ニコン Pattern drawing device
CN109478018B (en) * 2015-12-17 2020-11-24 株式会社尼康 Pattern drawing device
KR102541913B1 (en) 2016-03-30 2023-06-13 가부시키가이샤 니콘 The apparatus for drawing pattern, and the pattern imaging method and device manufacturing method
WO2018061633A1 (en) * 2016-09-29 2018-04-05 株式会社ニコン Beam scanning device and pattern rendering apparatus
TWI736621B (en) * 2016-10-04 2021-08-21 日商尼康股份有限公司 Pattern drawing device and pattern drawing method
WO2018164087A1 (en) * 2017-03-10 2018-09-13 株式会社ニコン Pattern drawing device and pattern exposure device
WO2019065224A1 (en) * 2017-09-26 2019-04-04 株式会社ニコン Pattern-drawing device
JP7136601B2 (en) * 2018-06-25 2022-09-13 川崎重工業株式会社 Light guide device and laser processing device
JP2020021079A (en) * 2019-09-04 2020-02-06 株式会社ニコン Pattern drawing apparatus
JP2020024443A (en) * 2019-10-17 2020-02-13 株式会社ニコン Pattern drawing apparatus
KR20220150942A (en) * 2020-04-06 2022-11-11 가부시키가이샤 니콘 Pattern forming device and pattern forming method
JP2022052111A (en) * 2020-09-23 2022-04-04 株式会社Screenホールディングス Substrate position detecting method, drawing method, substrate position detecting device, and drawing device
JP7334708B2 (en) * 2020-10-20 2023-08-29 株式会社豊田自動織機 Autonomous mobile

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2653782B2 (en) * 1986-05-20 1997-09-17 東芝機械株式会社 Laser drawing equipment
JP3140185B2 (en) * 1992-07-13 2001-03-05 富士通株式会社 Image forming device
JPH08110488A (en) * 1994-10-11 1996-04-30 Canon Inc Optical scanning device
JPH10142538A (en) * 1996-11-12 1998-05-29 Asahi Optical Co Ltd Laser plotting device having multihead scanning optical system
US6037967A (en) * 1996-12-18 2000-03-14 Etec Systems, Inc. Short wavelength pulsed laser scanner
JP4232130B2 (en) * 1998-03-11 2009-03-04 株式会社ニコン Laser apparatus and light irradiation apparatus and exposure method using this laser apparatus
JP3945951B2 (en) * 1999-01-14 2007-07-18 日立ビアメカニクス株式会社 Laser processing method and laser processing machine
JP4375846B2 (en) * 1999-09-10 2009-12-02 古河電気工業株式会社 Laser equipment
JP2001133710A (en) * 1999-11-05 2001-05-18 Asahi Optical Co Ltd Laser plotting device having multi-head scanning optical system
JP3749083B2 (en) * 2000-04-25 2006-02-22 株式会社ルネサステクノロジ Manufacturing method of electronic device
JP3945966B2 (en) * 2000-07-27 2007-07-18 株式会社リコー Image forming apparatus
JP2002029094A (en) * 2000-07-18 2002-01-29 Konica Corp Imaging apparatus
JP3656959B2 (en) * 2001-05-11 2005-06-08 大日本スクリーン製造株式会社 Cylindrical outer surface scanning device and plate size checking method
CN1613084A (en) * 2002-01-08 2005-05-04 提维股份有限公司 Electronic content distribution and exchange system
JP2004086193A (en) * 2002-07-05 2004-03-18 Nikon Corp Light source device and light irradiation apparatus
JP2004146681A (en) * 2002-10-25 2004-05-20 Sumitomo Electric Ind Ltd Fiber for light amplification, light amplifier, light source device, optical treatment device, and exposure device
JP4351509B2 (en) * 2003-09-19 2009-10-28 株式会社リコー Rotating Body Position Control Method, Rotating Body Position Control Device, Image Forming Device, Image Reading Device, Recording Medium
JP2007506136A (en) * 2003-09-22 2007-03-15 オーボテック リミテッド Color filter direct drawing system and direct drawing method
US20050200929A1 (en) * 2004-03-15 2005-09-15 Michael Plotkin Out of plane start of scan
KR101421915B1 (en) * 2004-06-09 2014-07-22 가부시키가이샤 니콘 Exposure system and device production method
JP2006098719A (en) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd Exposure apparatus
JP2007298603A (en) * 2006-04-28 2007-11-15 Shinko Electric Ind Co Ltd Drawing device and drawing method
JP4853388B2 (en) * 2007-06-05 2012-01-11 コニカミノルタビジネステクノロジーズ株式会社 Multi-beam scanning apparatus and image forming apparatus provided with the apparatus
FR2922330A1 (en) * 2007-10-15 2009-04-17 Commissariat Energie Atomique METHOD FOR MANUFACTURING A MASK FOR HIGH RESOLUTION LITHOGRAPHY
JP5448240B2 (en) * 2008-10-10 2014-03-19 株式会社ニコン Display element manufacturing equipment
JP5094678B2 (en) * 2008-10-20 2012-12-12 キヤノン株式会社 Scanning optical unit and color image forming apparatus using the same
US8541163B2 (en) * 2009-06-05 2013-09-24 Nikon Corporation Transporting method, transporting apparatus, exposure method, and exposure apparatus
CN102081307B (en) * 2009-11-26 2013-06-19 上海微电子装备有限公司 Method for controlling exposure dose of photoetching machine
KR101816327B1 (en) * 2010-02-12 2018-01-08 가부시키가이샤 니콘 Substrate processing device
NL2006260A (en) * 2010-02-23 2011-08-24 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
CN201820072U (en) * 2010-08-12 2011-05-04 志圣科技(广州)有限公司 Double-sided exposure device
JP6074898B2 (en) * 2012-03-26 2017-02-08 株式会社ニコン Substrate processing equipment
TWI626515B (en) * 2012-03-26 2018-06-11 日商尼康股份有限公司 Substrate processing apparatus, processing apparatus and device manufacturing method
CN104380204B (en) * 2012-06-21 2016-10-19 株式会社尼康 Illuminator, processing means and manufacturing method
JP6091792B2 (en) * 2012-07-26 2017-03-08 株式会社ミクニ Electric pump
JP2014035412A (en) * 2012-08-08 2014-02-24 Nikon Corp Exposure device and device manufacturing method
CN106886133B (en) 2012-08-28 2018-06-29 株式会社尼康 Patterning device and substrate supporting arrangement
JP2014048575A (en) * 2012-09-03 2014-03-17 Opcell Co Ltd Method for generating many micropore in thin film at high speed and device using the same
JP6256338B2 (en) * 2012-09-14 2018-01-10 株式会社ニコン Substrate processing apparatus and device manufacturing method

Also Published As

Publication number Publication date
CN107272353A (en) 2017-10-20
WO2015152218A1 (en) 2015-10-08
JP2019023764A (en) 2019-02-14
HK1245417B (en) 2020-03-27
JPWO2015152218A1 (en) 2017-04-13
CN106133610B (en) 2017-12-29
KR20220038545A (en) 2022-03-28
TWI695235B (en) 2020-06-01
CN107255913A (en) 2017-10-17
CN107957660A (en) 2018-04-24
CN106133610A (en) 2016-11-16
CN107272353B (en) 2019-06-14
HK1247996A1 (en) 2018-10-05
KR102430139B1 (en) 2022-08-08
TW201600941A (en) 2016-01-01
TWI661280B (en) 2019-06-01
TW201932996A (en) 2019-08-16
TWI684836B (en) 2020-02-11
CN107957660B (en) 2020-10-23
TWI674484B (en) 2019-10-11
TW201842420A (en) 2018-12-01
TWI709006B (en) 2020-11-01
TW202018436A (en) 2020-05-16
KR20170002375A (en) 2017-01-06
JP6597602B2 (en) 2019-10-30
TW201842419A (en) 2018-12-01
JP2019215588A (en) 2019-12-19
HK1245420A1 (en) 2018-08-24
TW202004368A (en) 2020-01-16
CN107255913B (en) 2019-10-11
KR102377752B1 (en) 2022-03-24

Similar Documents

Publication Publication Date Title
TWI639064B (en) Substrate processing device and element manufacturing method
TWI677766B (en) Method for adjusting substrate processing device
JP6648798B2 (en) Pattern drawing equipment