TWI708306B - 用於電漿切粒之設備 - Google Patents

用於電漿切粒之設備 Download PDF

Info

Publication number
TWI708306B
TWI708306B TW105133684A TW105133684A TWI708306B TW I708306 B TWI708306 B TW I708306B TW 105133684 A TW105133684 A TW 105133684A TW 105133684 A TW105133684 A TW 105133684A TW I708306 B TWI708306 B TW I708306B
Authority
TW
Taiwan
Prior art keywords
work piece
frame
frame cover
cover element
contact
Prior art date
Application number
TW105133684A
Other languages
English (en)
Chinese (zh)
Other versions
TW201725647A (zh
Inventor
高鈿 拉古納森
大衛 A 托塞爾
奧利薇 安塞爾
Original Assignee
英商Ｓｐｔｓ科技公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 英商Ｓｐｔｓ科技公司 filed Critical 英商Ｓｐｔｓ科技公司
Publication of TW201725647A publication Critical patent/TW201725647A/zh
Application granted granted Critical
Publication of TWI708306B publication Critical patent/TWI708306B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
TW105133684A 2015-10-22 2016-10-19 用於電漿切粒之設備 TWI708306B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1518756.0A GB201518756D0 (en) 2015-10-22 2015-10-22 Apparatus for plasma dicing
GB1518756.0 2015-10-22

Publications (2)

Publication Number Publication Date
TW201725647A TW201725647A (zh) 2017-07-16
TWI708306B true TWI708306B (zh) 2020-10-21

Family

ID=55130098

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105133684A TWI708306B (zh) 2015-10-22 2016-10-19 用於電漿切粒之設備

Country Status (7)

Country Link
US (2) US10283381B2 (ko)
EP (1) EP3159925B1 (ko)
JP (1) JP6557202B2 (ko)
KR (1) KR102052242B1 (ko)
CN (1) CN106952797B (ko)
GB (1) GB201518756D0 (ko)
TW (1) TWI708306B (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8946058B2 (en) * 2011-03-14 2015-02-03 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
GB201518756D0 (en) * 2015-10-22 2015-12-09 Spts Technologies Ltd Apparatus for plasma dicing
JP6524536B2 (ja) * 2016-11-09 2019-06-05 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
DE102018200656A1 (de) * 2018-01-16 2019-07-18 Disco Corporation Verfahren zum Bearbeiten eines Wafers
TWI721463B (zh) * 2019-06-21 2021-03-11 日月光半導體製造股份有限公司 環狀件及晶圓夾持組件
GB201918333D0 (en) 2019-12-12 2020-01-29 Spts Technologies Ltd A semiconductor wafer dicing process
US20220108908A1 (en) * 2020-10-06 2022-04-07 Applied Materials, Inc. Shadow ring kit for plasma etch wafer singulation process
GB202020022D0 (en) * 2020-12-17 2021-02-03 Spts Technologies Ltd Method and apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8691702B2 (en) * 2011-03-14 2014-04-08 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
TW201530642A (zh) * 2013-12-17 2015-08-01 Applied Materials Inc 用於在電漿腔室中散熱的電漿熱屏蔽件

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6129808A (en) 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
JP2002141337A (ja) 2000-11-02 2002-05-17 Matsushita Electric Ind Co Ltd プラズマ処理装置及びプラズマ処理方法
JP4013753B2 (ja) 2002-12-11 2007-11-28 松下電器産業株式会社 半導体ウェハの切断方法
US20050016684A1 (en) * 2003-07-25 2005-01-27 Applied Materials, Inc. Process kit for erosion resistance enhancement
KR100578129B1 (ko) * 2003-09-19 2006-05-10 삼성전자주식회사 플라즈마 식각 장치
JP2005252126A (ja) 2004-03-08 2005-09-15 Disco Abrasive Syst Ltd ウエーハの加工方法
US20070065597A1 (en) * 2005-09-15 2007-03-22 Asm Japan K.K. Plasma CVD film formation apparatus provided with mask
JP2007294812A (ja) 2006-04-27 2007-11-08 Fujikura Ltd 冷却装置およびプラズマ処理装置
JP4840174B2 (ja) * 2007-02-08 2011-12-21 パナソニック株式会社 半導体チップの製造方法
US7781310B2 (en) 2007-08-07 2010-08-24 Semiconductor Components Industries, Llc Semiconductor die singulation method
JP4858395B2 (ja) * 2007-10-12 2012-01-18 パナソニック株式会社 プラズマ処理装置
TW200935506A (en) * 2007-11-16 2009-08-16 Panasonic Corp Plasma dicing apparatus and semiconductor chip manufacturing method
US8941968B2 (en) 2010-06-08 2015-01-27 Axcelis Technologies, Inc. Heated electrostatic chuck including mechanical clamp capability at high temperature
US9265275B2 (en) 2010-11-11 2016-02-23 Rijk Zwaan Zaadteelt En Zaadhandel B.V. Spinach line SP6504
US8946058B2 (en) * 2011-03-14 2015-02-03 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
US8802545B2 (en) * 2011-03-14 2014-08-12 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
JP5528394B2 (ja) 2011-05-30 2014-06-25 パナソニック株式会社 プラズマ処理装置、搬送キャリア、及びプラズマ処理方法
CN103998642B (zh) * 2011-12-15 2016-01-06 佳能安内华股份有限公司 处理装置及护罩
JP5849232B2 (ja) 2012-09-20 2016-01-27 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP5981358B2 (ja) * 2013-01-23 2016-08-31 東京エレクトロン株式会社 伝熱シート貼付方法
US9236305B2 (en) 2013-01-25 2016-01-12 Applied Materials, Inc. Wafer dicing with etch chamber shield ring for film frame wafer applications
JP5962921B2 (ja) * 2013-05-09 2016-08-03 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP6094813B2 (ja) * 2013-09-02 2017-03-15 パナソニックＩｐマネジメント株式会社 プラズマ処理装置
JP5938716B2 (ja) * 2013-11-01 2016-06-22 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP6024921B2 (ja) 2013-11-01 2016-11-16 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
US9236284B2 (en) * 2014-01-31 2016-01-12 Applied Materials, Inc. Cooled tape frame lift and low contact shadow ring for plasma heat isolation
US9034771B1 (en) 2014-05-23 2015-05-19 Applied Materials, Inc. Cooling pedestal for dicing tape thermal management during plasma dicing
US9117868B1 (en) 2014-08-12 2015-08-25 Applied Materials, Inc. Bipolar electrostatic chuck for dicing tape thermal management during plasma dicing
JP2016051876A (ja) * 2014-09-02 2016-04-11 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
JP6296299B2 (ja) * 2014-09-02 2018-03-20 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
JP6555656B2 (ja) * 2015-02-17 2019-08-07 パナソニックＩｐマネジメント株式会社 プラズマ処理装置および電子部品の製造方法
CN106024565B (zh) * 2015-03-31 2019-11-19 松下知识产权经营株式会社 等离子处理装置以及等离子处理方法
US9570272B2 (en) * 2015-03-31 2017-02-14 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus and plasma processing method
CN106024566B (zh) * 2015-03-31 2019-07-05 松下知识产权经营株式会社 等离子处理装置以及等离子处理方法
US9478455B1 (en) * 2015-06-12 2016-10-25 Applied Materials, Inc. Thermal pyrolytic graphite shadow ring assembly for heat dissipation in plasma chamber
GB201518756D0 (en) * 2015-10-22 2015-12-09 Spts Technologies Ltd Apparatus for plasma dicing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8691702B2 (en) * 2011-03-14 2014-04-08 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
TW201530642A (zh) * 2013-12-17 2015-08-01 Applied Materials Inc 用於在電漿腔室中散熱的電漿熱屏蔽件

Also Published As

Publication number Publication date
GB201518756D0 (en) 2015-12-09
KR20170054251A (ko) 2017-05-17
US11769675B2 (en) 2023-09-26
KR102052242B1 (ko) 2019-12-04
JP2017085097A (ja) 2017-05-18
US20170117166A1 (en) 2017-04-27
TW201725647A (zh) 2017-07-16
CN106952797B (zh) 2020-08-07
US20190259640A1 (en) 2019-08-22
CN106952797A (zh) 2017-07-14
EP3159925B1 (en) 2022-05-11
JP6557202B2 (ja) 2019-08-07
EP3159925A1 (en) 2017-04-26
US10283381B2 (en) 2019-05-07

Similar Documents

Publication Publication Date Title
TWI708306B (zh) 用於電漿切粒之設備
JP6617222B1 (ja) 半導体ウエハーをプラズマ・ダイシングするための方法および装置
US9034771B1 (en) Cooling pedestal for dicing tape thermal management during plasma dicing
US9165812B2 (en) Cooled tape frame lift and low contact shadow ring for plasma heat isolation
TWI658538B (zh) 在電漿切割期間藉由晶圓框架支撐環冷卻之切割膠帶熱管理
US9117868B1 (en) Bipolar electrostatic chuck for dicing tape thermal management during plasma dicing
JP2016510168A (ja) 半導体ウェハをプラズマ・ダイシングするための方法及び装置
JP7500655B2 (ja) 基板を製造する方法、及び基板の製造用システム
US9870938B2 (en) Semiconductor element producing method by flattening protective tape
US6756562B1 (en) Semiconductor wafer dividing apparatus and semiconductor device manufacturing method
JP2017112158A (ja) 半導体装置の製造方法
JP2021027336A (ja) 基板の処理法
JP6301658B2 (ja) ウェーハの加工方法
JP2013026247A (ja) 半導体装置の製造方法
JP4572529B2 (ja) 半導体素子の製造方法
JP2016054192A (ja) 半導体ウエハのダイシング方法
TW202221839A (zh) 處理基板的方法