TW201725647A - 用於電漿切粒之設備 - Google Patents

用於電漿切粒之設備 Download PDF

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TW201725647A
TW201725647A TW105133684A TW105133684A TW201725647A TW 201725647 A TW201725647 A TW 201725647A TW 105133684 A TW105133684 A TW 105133684A TW 105133684 A TW105133684 A TW 105133684A TW 201725647 A TW201725647 A TW 201725647A
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workpiece
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高鈿 拉古納森
大衛 A 托塞爾
奧利薇 安塞爾
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Ｓｐｔｓ科技公司
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Abstract

依據本發明，提供一種用以將半導體基材電漿切粒之設備的方法，而該半導體基材為形成一工作件之一部分的類型，該工作件更包含在一框構件上之一載片，其中該載片承載該半導體基材， 該設備包含： 一腔室； 一電漿產生裝置，其組配成可在該腔室內產生適用於將該半導體基材切粒之一電漿； 一工作件支持件，其設置在該腔室中用以透過與該載片接觸來支持該工作件； 一框蓋元件，其組配成在使用時接觸該框構件，藉此將該載片夾抵在設置於該腔室中之一輔助元件上。

Description

用於電漿切粒之設備
本發明係有關於用於電漿切粒一半導體基材之設備，而該半導體基材為形成一工作件之一部分的類型，該工作件更包含在一框構件上之一載片，其中該載片承載該半導體基材。本發明亦有關於電漿切粒之相關方法。
半導體製造通常包括在一單一半導體晶圓上並行地加工大量矽晶片。一旦該加工步驟完成後，該晶圓必須被切粒成分開之晶片。接著連接該等晶片並接著封裝該等晶片。以往，該切粒步驟使用沿該晶圓上之刻劃線切割之鑽石鋸來實行。最近，對於提供用於將晶圓切粒之新方法很有興趣。這些方法可增加效能及降低成本。其中一方法係使用雷射實行該晶圓之切粒。另一種方法係使用電漿蝕刻來將該晶圓切粒。這方法之優點在於可使晶粒邊緣破壞減至最少，可藉由使用非常窄之刻劃線使該晶圓表面之利用效率達到最大，及可選擇使用非正交刻劃線布置。依據應用要求，該電漿蝕刻可在薄化或研磨該晶圓前或後實施。
矽晶圓係在一「框及帶」載體上供切粒。圖7係該配置之部份示意圖，其顯示具有被刻劃線72分開之多數分開晶片73的一矽晶圓71。該晶圓71被一黏著劑黏在一載帶74上，而該載帶74被一環狀框環76扣持。一電漿9被用來在一真空系統(未圖示)中蝕刻暴露之刻劃線。該晶圓71/載帶74/框76形成放在一模板75上之一工作件總成。該模板扣持該工作件，提供冷卻及任選之一RF偏壓以便協助該蝕刻製程。一靜電夾頭(ESC)經常被用來改善在該晶圓與該模板間之熱耦合。US8691702揭露一以ESC為主之模板總成，其可加工在一框上之有帶晶圓。此外，設有使該工作件升高以便讓它可移動至該模板或遠離該模板之一升降機構。另外，設有保護該升降機構及該框的與該框分開之一框蓋。又，設有該框蓋之一延伸部或一分開組件以保護在該框附近之帶。該ESC具有適當冷卻通道以便由該夾頭散熱。在該製程中散熱以便保持適當工作溫度是一重要應考慮事項。該載帶特別會有一過熱之風險。通常，該載帶由具有大約90℃之軟化點的一聚合物材料形成，例如一聚烯烴(PO)、聚氯乙烯(PVC)或聚對苯二甲酸乙二酯(PET)。實務上，應考慮必須在加工時保持該載帶之溫度等於或小於80℃以避免破壞該帶或在該帶上使用之丙烯酸黏著劑。由於該帶通常小於200微米且因此該帶具有一低熱容量，一直有熱失控之風險。
由於經濟上之原因，需要儘快地將晶圓切粒同時維持加工規格。這通常藉由在一高RF功率下操作該電漿蝕刻工具以增加在該半導體晶圓之刻劃線中之暴露材料來達成。使用高蝕刻速率範圍會增加過熱之可能性。因此，極需要在電漿切粒時達成高蝕刻速率以使產量達到最大，同時避免破壞該工作件，特別是避免破壞該載帶或相關黏著劑。特別需要可維持該載帶之溫度等於或小於80℃。
本發明在至少某些實施例中，解決上述問題及需求。
依據本發明之第一態樣，提供一種用以將一半導體基材電漿切粒之設備，而該半導體基材為形成一工作件之一部分的類型，該工作件更包含在一框構件上之一載片，其中該載片承載該半導體基材， 該設備包含： 一腔室； 一電漿產生裝置，其組配成可在該腔室內產生適用於將該半導體基材切粒之一電漿； 一工作件支持件，其設置在該腔室中用以透過與該載片接觸來支持該工作件； 一框蓋元件，其組配成在使用時接觸該框構件，藉此將該載片夾抵在設置於該腔室中之一輔助元件上。
該輔助元件可為該工作件支持件。
該輔助元件可為設置成環繞該工作件支持件的一屏蔽環。該屏蔽環可與該腔室熱接觸。通常，該屏蔽環可與該腔室之一或多數內壁熱接觸。
該設備可更包含一熱屏蔽件，其設置在該框蓋元件上方以便熱屏蔽該框蓋元件使其不經受該電漿。
該熱屏蔽件可與該框蓋元件分開。該熱屏蔽件可被支持在該輔助元件上。
該熱屏蔽件可與該框蓋元件接觸。通常，在這些實施例中，必須減少在該熱屏蔽件與該框蓋元件間之熱接觸。該熱屏蔽件可包含接觸該框蓋元件之一或多數突起部。依此方式，可減少熱接觸。該等突起部可為任何適當形式，例如銷、一或多數凸脊、或尖突。
該熱屏蔽件可由一陶瓷材料形成。該陶瓷材料可為氧化鋁。
在其他主要實施例中，沒有熱屏蔽件來熱屏蔽該框蓋元件使其不經受該電漿。
該設備可更包含至少一夾具，其施加一夾持力至該框蓋元件上以協助藉由該框蓋元件將該載片夾抵在該輔助元件上。該至少一夾具可直接夾住該框蓋元件，或若具有該熱屏蔽件，該至少一夾具可將該熱屏蔽件夾抵在該框蓋元件上以協助將該載片夾抵在該輔助元件上。該至少一夾具可安裝在該工作件支持件上。
該框蓋元件可包含在使用時接觸該框構件之一大致平坦下表面。
該框蓋元件可包含在使用時接觸該框構件之一或多數突起部。該等突起部可為任何適當形式，例如銷、一或多數凸脊、或尖突。該輔助元件可包含用以在一工作件未放在該工作件支持件上時收納該框蓋元件之突起部的一或多數孔。
該設備可組配成使得該框蓋元件可在一工作件未放在該工作件支持件上時與該輔助元件熱接觸。
該框蓋元件可由一金屬或一陶瓷材料形成。一適當金屬例係鋁。一適當陶瓷材料例係氧化鋁。
該工作件支持件可為一靜電夾頭(ESC)。該ESC可為一單極或一雙極ESC。
該設備可更包含一升降機構，其用以降低及升高框而接觸及脫離該工作件支持件，且降低及升高該框蓋元件而接觸及脫離該框構件及任選之工作件支持件。
該設備可與一工作件組合設置，而該工作件包含一半導體基材及在一框構件上之一載片，其中該載片支持該半導體基材，該工作件支持件透過與該載片接觸來支持該工作件，且該框構件被該框蓋元件夾住。
該工作件支持件可包含透過與該載片接觸來支持該工作件的一工作件支持表面。該工作件支持表面具有一周邊。該框構件可界定該工作件之一周邊。該工作件之周邊可全部設置在該工作件支持表面之周邊內。
該載片可包含由一聚合物材料形成之帶，且該帶可任選地具有一黏著劑。該聚合物材料可為一PO、PVC或PET。
依據本發明之一第二態樣，提供一種將一半導體基材電漿切粒之方法，而該半導體基材為形成一工作件之一部分的類型，該工作件更包含在一框構件上之一載片，其中該載片承載該半導體基材，該方法包含以下步驟： 提供依據本發明之第一態樣的一設備； 藉由使該載片與該工作件支持件接觸來支持該工作件； 藉由使該框構件與該框蓋元件接觸將該載片夾抵在該輔助元件上；及 將該半導體基材電漿切粒。
該工作件支持件可包含透過與該載片接觸來支持該工作件的一工作件支持表面。該工作件支持表面具有一周邊。該框構件可界定該工作件之一周邊。該工作件之周邊可全部設置在該工作件支持表面之周邊內。
該工作件支持件可為一靜電夾頭且與載膜接觸的該靜電夾頭之部分可為一大致平坦且無形貌體之上表面。
該工作件支持件可為作為一輔助元件之一靜電夾頭，其中該靜電夾頭提供作用在該框構件上之另一靜電夾持力。
在將該半導體基材電漿切粒之步驟完成後，可由該腔室移除該工作件且可使該框蓋元件與該工作件支持件熱接觸。
雖然本發明已如上說明過了，但它可延伸至以上提出，或在以下說明、圖式或申請專利範圍中提出之特徵的任何發明組合。例如，本發明第一態樣中所述之任何特徵可被視為亦揭露於本發明之第二態樣中。
本發明之第一實施例顯示在圖1中。一半導體基材11包含多數刻劃線12及多數分開半導體晶片13。該半導體基材11通常由矽構成，但是，亦可使用砷化鎵及其他III-V半導體。該半導體基材11黏在該切粒帶14上，且該切粒帶14定位在一靜電夾頭15之頂部上。一環狀框16定位在切粒帶14之頂部上使得該切粒帶14被固定在該環狀框16與該靜電夾頭15之間。該半導體基材11設計成可在定位該環狀框16時容許通常為±3 mm之一非同心程度。框總成17包含該半導體基材11、該切粒帶14及該環狀框16。該切粒帶14通常由聚烯烴、聚氯乙烯或聚對苯二甲酸乙二酯構成。該環狀框16通常由不鏽鋼或塑膠構成。該框總成17及該靜電夾頭15之表面積係選擇成使得該靜電夾頭15延伸超過該環狀框16之直徑且包含多數內冷卻通道18，且一冷媒氣體通過該等內冷卻通道18。一高電壓可施加在該靜電夾頭15以便對該框總成17提供一第一夾持力。該靜電夾持機構使該框總成17與該靜電夾頭15之間存在一良好熱接觸。此外，該靜電夾頭15未在該環狀框16之直徑內包含任何表面形貌體以使在該框總成17與該靜電夾頭15間之熱接觸達到最大。在該框總成17與該靜電夾頭15間之一良好熱接觸有助於在電漿處理時保持該框總成17為冷狀態且防止該切粒帶14之熱劣化。該環狀框16藉由使用一框蓋110屏蔽來防止直接暴露於該電漿19。
在本發明之一實施例中，該框蓋110與該環狀框16良好地熱接觸。該框蓋110可藉由使用一熱屏蔽件111對該電漿19提供額外之保護。若使用一熱屏蔽件111，該框蓋110由如鋁等具有高熱傳導性之一材料構成。但是，若未使用一熱屏蔽件111，該框蓋110將與該電漿19直接接觸且最好為如氧化鋁或其他陶瓷材料等具有低熱傳導性之一材料。該熱屏蔽件111通常由如氧化鋁或其他陶瓷材料等具有低熱傳導性之一材料構成。在該熱屏蔽件111與該框蓋110間之接點112極小或不存在以使在該熱屏蔽件111與該框蓋110間之熱通路減至最少。因此，該電漿19直接加熱該熱屏蔽件111但該熱未穿透該框總成17。該環狀框16、該框蓋110及該熱屏蔽件111之重量對該靜電夾頭15提供該切粒帶14之一第二夾持機構。該第二夾持機構亦可使用一主動夾持力來獲得。該主動夾持力可透過使用一模板安裝加重式夾具或其他夾持裝置來獲得。該主動夾持力可直接施加在該熱屏蔽件111、該框蓋110、該環狀框16或其組合上以便對該靜電夾頭15提供該切粒帶14之該第二夾持機構。在該電漿處理完成後由真空加工腔室113移除該框總成17且開始一冷卻階段，如圖2所示。該框蓋110係在一連續電漿處理開始前冷卻。該冷卻效果係藉由降低該框蓋110使得該框蓋110與該靜電夾頭15間有一大接觸面積來達成。該框蓋110係由如鋁等具有高熱傳導性之一材料構成，且與該靜電夾頭15形成一良好熱接觸。在該框蓋110與該靜電夾頭15間之良好熱接觸使來自該框蓋110之熱可輕易地散逸且可有效地冷卻該框蓋110。
在本發明之一第二實施例中，藉由使用多數夾持銷30將該框總成17由上方機械地夾在該靜電夾頭35上，如圖3所示。該等夾持銷30係由該框蓋31之底側突出之多數突起部且在該框蓋31與該環狀框16之間形成一不良熱接觸。該框蓋31可以一熱屏蔽件111之形式提供對該電漿19之額外保護。若使用一熱屏蔽件111，該框蓋31由如鋁等具有高熱傳導性之一材料構成。但是，若未使用一熱屏蔽件111，該框蓋31與該電漿19將直接接觸且最好是如氧化鋁或其他陶瓷材料等具有低熱傳導性之一材料。
在該電漿處理完成後由該真空加工腔室113移除該框總成17且開始一冷卻階段，如圖4所示。該框蓋31係在一連續電漿處理開始前冷卻。該冷卻效果係藉由降低該框蓋31使得該它與該經熱調節之靜電夾頭35直接接觸來達成。在本發明之這實施例中，該等夾持銷30插入設置在該靜電夾頭35中之互補凹部32。這確保在該框蓋31與該靜電夾頭35間之一高接觸面積及良好熱接觸以便在該冷卻階段有效地冷卻該框蓋31。
在本發明之一第三實施例中，該環狀框16直接定位在一屏蔽環50之頂部。該屏蔽環50係包圍靜電夾頭55之一環狀組件。對該電漿19之熱保護係藉由使用一框蓋51及一熱屏蔽件52來提供，如圖5所示。該屏蔽環50通常由如鋁等具有高熱傳導性之一材料構成，且保持與該真空加工腔室53之壁接觸。該真空加工腔室53之壁保持在一適當溫度，通常大約為55℃。該熱屏蔽件52為該框蓋51提供熱保護。該熱屏蔽件52只放在屏蔽環50上且在該電漿處理時未接觸該框蓋51。該熱屏蔽件52係透過如尖突等一連串等距分散之突起部54與該屏蔽環50接觸。該熱屏蔽件52可包含形式為一帶蓋56之一延伸部以便為該切粒帶14提供保護。該帶蓋通常由如氧化鋁或其他陶瓷材料等具有不良熱傳導性之一材料構成。該熱屏蔽件52及帶蓋56係正在該電漿19之瞄準線上且可到達超過150℃之溫度。該熱屏蔽件52及帶蓋56吸收來自該電漿19之熱輻射，但由於該等突起部54與該屏蔽環50之不良熱接觸，熱不容易傳送至該屏蔽環50。這有助於保持該熱屏蔽件52及帶蓋56在一高溫。該熱屏蔽件52及帶蓋56形成一熱屏蔽部，而該熱屏蔽部使該框蓋51比習知技術冷。該比較冷框蓋51亦形成環繞該框16之一熱屏蔽部。這保護該框16不受由該熱屏蔽件52及帶蓋56傳送之輻射及傳導熱影響。有利地，該熱屏蔽件52及帶蓋56之高溫防止特定沈積物之累積，因此增加在清潔程序間之可使用壽命。該框蓋51係透過如尖突等一連串等距分散之突起部57與該環狀框16接觸，且用以將該環狀框16機械地夾在該屏蔽環50上。該機械夾持力可來自該框蓋51之重量或可使用另一夾持力。在該等突起部57與該環狀框16間之接觸面積極小而產生一不良熱接觸。比較冷之該框蓋51及在該等突起部57與該框16間之不良熱接觸的組合表示可在實質上沒有破壞風險之情形下使用塑膠框。亦可使用金屬框。
為了由該真空加工腔室113移除該框總成17，使用升降銷60使該環狀框16及該框蓋51上升。圖6顯示該真空加工腔室之橫截面圖，且多數升降銷60在該上升位置。在該熱屏蔽件52與該框蓋51間之一不良熱接觸係藉由使用如尖突等之等距分散突起部61保持。該等突起部61之極小接觸面積使該熱屏蔽件52至該框蓋51之散熱為最少。各組突起部54與57具有可供它們插入之一對應凹部，因此使該框蓋51、該熱屏蔽件52及該屏蔽環50可在使用該等升降銷時自動對齊。
9, 19‧‧‧電漿 11‧‧‧半導體基材 12, 72‧‧‧刻劃線 13‧‧‧半導體晶片 14‧‧‧切粒帶 15, 35, 55‧‧‧靜電夾頭 16‧‧‧(環狀)框 17‧‧‧框總成 18‧‧‧內冷卻通道 30‧‧‧夾持銷 31, 51, 110‧‧‧框蓋 32‧‧‧互補凹部 50‧‧‧屏蔽環 52, 111‧‧‧熱屏蔽件 53, 113‧‧‧真空加工腔室 54, 57, 61‧‧‧突起部 56‧‧‧帶蓋 60‧‧‧升降銷 71‧‧‧(矽)晶圓 73‧‧‧晶片 74‧‧‧載帶 75‧‧‧模板 76‧‧‧環狀框環/框 112‧‧‧接點
以下將配合附圖說明依據本發明之設備及方法的實施例，其中： 圖1係安裝在具有另一熱屏蔽件之真空加工室中的半導體基材的橫截面圖； 圖2係在連續電漿處理間發生之一冷卻階段時(圖1之)真空加工室的橫截面圖； 圖3係安裝在一真空加工室中之半導體基材的橫截面圖，其中使用夾持銷將環狀框夾在切粒帶上； 圖4係在連續電漿處理間發生之一冷卻階段時(圖3之)真空加工室的橫截面圖，其中夾持銷下降至ESC之凹部中； 圖5係在下降位置時最佳設計之熱屏蔽件的橫截面圖； 圖6係在上升位置時最佳設計之熱屏蔽件的橫截面圖；及 圖7顯示一工作件之電漿切粒，該工作件包含被支持在一帶及框載體上之一晶圓。
11‧‧‧半導體基材
12‧‧‧刻劃線
13‧‧‧半導體晶片
14‧‧‧切粒帶
15‧‧‧靜電夾頭
16‧‧‧(環狀)框
17‧‧‧框總成
18‧‧‧內冷卻通道
19‧‧‧電漿
110‧‧‧框蓋
111‧‧‧熱屏蔽件
112‧‧‧接點
113‧‧‧真空加工腔室

Claims (27)

  1. 一種用以將半導體基材電漿切粒之設備，而該半導體基材為形成一工作件之一部分的類型，該工作件更包含在一框構件上之一載片，其中該載片承載該半導體基材， 該設備包含： 一腔室； 一電漿產生裝置，其組配成可在該腔室內產生適用於將該半導體基材切粒之一電漿； 一工作件支持件，其設置在該腔室中用以透過與該載片接觸來支持該工作件； 一框蓋元件，其組配成在使用時接觸該框構件，藉此將該載片夾抵在設置於該腔室中之一輔助元件上。
  2. 如請求項1之設備，其中該輔助元件係為該工作件支持件。
  3. 如請求項1之設備，其中該輔助元件係為設置成環繞該工作件支持件的一屏蔽環。
  4. 如請求項3之設備，其中該屏蔽環與該腔室熱接觸。
  5. 如請求項1至4中任一項之設備，更包含一熱屏蔽件，其設置在該框蓋元件上方以便熱屏蔽該框蓋元件使其不經受該電漿。
  6. 如請求項5之設備，其中該熱屏蔽件與該框蓋元件分開。
  7. 如請求項6之設備，其中該熱屏蔽件被支持在該輔助元件上。
  8. 如請求項5之設備，其中該熱屏蔽件與該框蓋元件接觸。
  9. 如請求項8之設備，其中該熱屏蔽件包含接觸該框蓋元件之一或多數突起部。
  10. 如請求項5至9中任一項之設備，其中該熱屏蔽件係由一陶瓷材料形成。
  11. 如請求項1至10中任一項之設備，其中沒有熱屏蔽件來熱屏蔽該框蓋元件使其不經受該電漿。
  12. 如請求項1至11中任一項之設備，更包含至少一夾具，其施加一夾持力至該框蓋元件上以協助藉由該框蓋元件將該載片夾抵在該輔助元件上。
  13. 如請求項1至12中任一項之設備，其中該框蓋元件包含在使用時接觸該框構件之一大致平坦下表面。
  14. 如請求項1至12中任一項之設備，其中該框蓋元件包含在使用時接觸該框構件之一或多數突起部。
  15. 如請求項14之設備，其中該輔助元件包含用以在一工作件未放在該工作件支持件上時收納該框蓋元件之該等突起部的一或多數孔。
  16. 如請求項1至15中任一項之設備，其組配成使得該框蓋元件可在一工作件未放在該工作件支持件上時與該輔助元件熱接觸。
  17. 如請求項1至16中任一項之設備，其中該框蓋元件係由金屬或一陶瓷材料形成。
  18. 如請求項1至17中任一項之設備，其中該工作件支持件係為一靜電夾頭。
  19. 如請求項1至18中任一項之設備，更包含一升降機構，其用以降低及升高框而接觸及脫離該工作件支持件，且降低及升高該框蓋元件而接觸及脫離該框構件及任選之該工作件支持件。
  20. 如請求項1至19中任一項之設備，其與一工作件組合，而該工作件包含該半導體基材及在一框構件上之一載片，其中該載片支持該半導體基材，該工作件支持件透過與該載片接觸來支持該工作件，且該框構件被該框蓋元件夾住。
  21. 如請求項20之設備，其中：該工作件支持件包含一工作件支持表面，其透過與該載片接觸來支持該工作件且具有一周邊；該框構件界定該工作件之一周邊；且該工作件之該周邊全部設置在該工作件支持表面之該周邊內。
  22. 如請求項21之設備，其中該載片包含由一聚合物材料形成之帶，且該帶任選地具有一黏著劑。
  23. 一種將半導體基材電漿切粒之方法，而該半導體基材為形成一工作件之一部分的類型，該工作件更包含在一框構件上之一載片，其中該載片承載該半導體基材，該方法包含以下步驟： 提供如請求項1之一設備； 藉由使該載片與該工作件支持件接觸來支持該工作件； 藉由使該框構件與該框蓋元件接觸將該載片夾抵在該輔助元件上； 將該半導體基材電漿切粒。
  24. 如請求項23之方法，其中：該工作件支持件包含一工作件支持表面，其透過與該載片接觸來支持該工作件且具有一周邊；該框構件界定該工作件之一周邊；且該工作件之該周邊全部設置在該工作件支持表面之該周邊內。
  25. 如請求項23或24之方法，其中該工作件支持件係為一靜電夾頭，且與載膜接觸的該靜電夾頭之部分係為一大致平坦且無形貌體之上表面。
  26. 如請求項23至25中任一項之方法，其中該工作件支持件係作為該輔助元件之一靜電夾頭，其中該靜電夾頭提供作用在該框構件上之另一靜電夾持力。
  27. 如請求項23至26中任一項之方法，其中，在將該半導體基材電漿切粒之步驟完成後，由該腔室移除該工作件且使該框蓋元件與該工作件支持件熱接觸。
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