CN106952797A - 等离子切割的设备和方法 - Google Patents

等离子切割的设备和方法 Download PDF

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CN106952797A
CN106952797A CN201610916255.1A CN201610916255A CN106952797A CN 106952797 A CN106952797 A CN 106952797A CN 201610916255 A CN201610916255 A CN 201610916255A CN 106952797 A CN106952797 A CN 106952797A
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CN106952797B (zh
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戈塔姆·拉格纳萨
戴维·A·托塞尔
奥立佛·安塞尔
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Abstract

根据本发明，提供了一种用于等离子切割半导体衬底的设备和方法，所述半导体衬底为形成工件的一部分的类型，所述工件进一步包括在框架构件上的载体片，其中，所述载体片承载半导体衬底。所述设备包括：腔室；等离子产生装置，所述等离子产生装置被配置成在所述腔室内产生适于切割所述半导体衬底的等离子；工件支撑件，所述工件支撑件位于所述腔室中，用于通过与所述载体片接触来支撑所述工件；框架盖元件，所述框架盖元件被配置成在使用时接触所述框架构件，从而夹紧所述载体片以抵靠设置在所述腔室中的辅助元件。

Description

等离子切割的设备和方法
技术领域
本发明涉及一种用于等离子切割形成工件一部分的类型的半导体衬底的设备，所述工件进一步包括在框架构件上的载体片，其中，所述载体片承载半导体衬底。本发明还涉及等离子切割的相关方法。
背景技术
半导体制造通常涉及在单个半导体晶圆上并行处理的大量硅芯片。一旦处理步骤完成，该晶圆就必须被切割成离散的芯片。然后将芯片连接，随后封装。传统上，使用金刚石锯沿晶圆上的划线切割来执行分割步骤。最近，在提供切割晶圆的新方法的方面有很多兴趣。这些能够增强性能并降低成本。一种这样的方法是使用激光执行晶圆的切割。一种替代方法是使用等离子蚀刻来切割晶圆。这具有以下方面的益处：使晶片边缘损伤最小化，通过使用非常窄的划线使晶圆表面的有效使用最大化，以及提供使用非正交划线布局的选项。根据应用要求，等离子蚀刻能够在削薄或研磨晶圆之前或之后进行。
提出硅晶圆用于在“框架和带”载体上切割。图7是这种布置的半示意图，示出了具有由划线72分隔开的离散芯片73的硅晶圆71。晶圆71通过粘合剂粘附到由环形框架环76保持的载体带74上。等离子9用于在真空系统(未示出)中蚀刻暴露的划线。晶圆71/载体带74/框架76形成工件组件，该工件组件被放置在平台75上。该平台保持该工件、提供冷却和可选的RF偏压以辅助该蚀刻工艺。经常，静电卡盘(ESC)用于改善晶圆和平台之间的热耦合。US8691702公开了一种基于ESC的平台组件，该基于ESC的平台组件能处理在框架上胶贴的晶片。提供升降机构，该升降机构使该工件上升以使它移动到平台和从平台处移出。提供与框架间隔开的框架盖，该框架盖保护该升降机构和该框架。提供该框架盖的延伸部或单独的部件以保护该框架附近的带。ESC提供有合适的冷却通道，以从卡盘中移除热量。一个重要的考虑因素是在该工艺期间热量的移除，以保持合适的工作温度。载体带特别具有过热的危险。通常，载体带由聚合物材料形成，诸如软化点为约90℃的聚烯烃(PO)、聚氯乙烯(PVC)或聚对苯二甲酸乙二醇酯(PET)。在实践中，认为有必要的是在处理期间保持载体带的温度为80℃或更低，以避免对带或带上使用的丙烯酸粘合剂的损伤。因为该带的厚度通常小于200微米，因此该带的热容量低，则热失控(thermal runaway)是恒定的风险。
出于经济原因，希望在保持工艺规格的同时尽可能快地切割晶片。这通常是通过在高RF功率下运行等离子蚀刻工具来增加在半导体晶片的划线中的暴露材料来实现。使用高蚀刻速率方案增加了过热的可能性。因此，强烈希望在等离子切割中实现高蚀刻速率以使生产量最大化，同时避免对工件的损伤，特别是避免对载体带或相关的粘合剂的损伤。特别期望能够保持载体带的温度为80℃或更低。
发明内容
本发明至少在其一些实施方式中解决了上述问题和需求。
根据本发明的第一方面，提供了一种用于等离子切割形成工件一部分的类型的半导体衬底的设备，所述工件进一步包括在框架构件上的载体片，其中，所述载体片承载半导体衬底。
所述设备包括：
腔室；
等离子产生装置，所述等离子产生装置被配置成在所述腔室内产生适于切割所述半导体衬底的等离子；
工件支撑件，所述工件支撑件位于所述腔室中，用于通过与所述载体片接触来支撑所述工件；
框架盖元件，所述框架盖元件被配置成在使用时接触所述框架构件，从而夹紧所述载体片以抵靠设置在所述腔室中的辅助元件。
所述辅助元件可以是所述工件支撑件。
所述辅助元件可以屏蔽环，所述屏蔽环设置在所述工件支撑件周围。所述屏蔽环可以与所述腔室热接触。通常，所述屏蔽环可以与所述腔室的一个或多个内壁热接触。
所述设备可以进一步包括热屏蔽件，所述热屏蔽件设置在所述框架盖元件上以对所述框架盖元件热屏蔽所述等离子。
所述热屏蔽件可以与框架盖元件间隔开。所述热屏蔽件可被支撑在所述辅助元件上。
所述热屏蔽件可以与所述框架盖元件接触。通常，在这些实施方式中，希望使所述热屏蔽件和所述框架盖元件之间的热接触最小化。所述热屏蔽件可以包括一个或多个突起，所述一个或多个突起接触所述框架盖元件。以这种方式能够减少热接触。所述突起可以是任何合适的形式，例如销(pin)、一个或多个脊(ridge)，或尖头(pip)。
所述热屏蔽件可以由陶瓷材料形成。所述陶瓷材料可以是氧化铝。
在其它主要实施方式中，不存在对所述框架盖元件热屏蔽所述等离子的热屏蔽件。
所述设备可以进一步包括至少一个夹具，所述夹具将夹紧力施加到所述框架盖元件，以辅助所述框架盖元件夹紧所述支撑片以抵靠所述辅助元件。所述至少一个夹具可以直接夹紧所述框架盖元件，或者，如果存在所述热屏蔽件，则所述至少一个夹具可以夹紧所述热屏蔽件以抵靠所述框架盖元件，以辅助夹紧所述载体片以抵靠所述辅助元件。所述至少一个夹具可被安装在所述工件支撑件上。
所述框架盖元件可以包括基本平坦的下表面，所述下表面在使用时接触所述框架构件。
所述框架盖元件可以包括一个或多个突起，所述突起在使用时接触所述框架构件。所述突起可以是任何合适的形式，例如销、一个或多个脊，或尖头。所述辅助元件可以包括一个或多个开口，所述开口用于当在所述工件支撑件上不存在工件时接收所述框架盖元件的所述突起。
所述设备可被配制成：当在所述工件支撑件上不存在工件时，所述框架盖元件能与所述辅助元件热接触。
所述框架盖元件可以由金属或陶瓷材料形成。合适的金属的实例是铝。合适的陶瓷材料的实例是氧化铝。
所述工件支撑件可以是静电卡盘(ESC)。ESC可以是单极或双极的ESC。
所述设备可以进一步包括升降机构，所述升降机构用于降低和升高所述框架以与所述工件支撑件接触和脱离接触，并且用于降低和升高所述框架盖元件与所述框架构件和可选的所述工件支撑件接触和脱离接触。
可以提供与包括所述半导体衬底和在框架构件上的载体片的工件结合的所述设备，其中，所述载体片支撑所述半导体衬底，所述工件支撑件通过与所述载体片接触来支撑所述工件，而所述框架构件被所述框架盖元件夹紧。
所述工件支撑件可以包括工件支撑表面，所述工件支撑表面通过与载体片接触来支撑所述工件。所述工件支撑表面具有周边。所述框架构件可以限定所述工件的周边。所述工件的周边可以完全位于所述工件支撑表面的周边内。
所述载体片可以包括由聚合物材料和可选的粘合剂形成的带。所述聚合物材料可以是PO、PVC或PET。
根据本发明的第二方面，提供了一种用于等离子切割形成工件一部分的类型的半导体衬底的方法，所述工件进一步包括在框架构件上的载体片，其中，所述载体片承载半导体衬底，所述方法包括以下步骤：
提供根据本发明的第一方面的设备；
通过使所述载体片与所述工件支撑件接触来支撑所述工件；
通过使所述框架构件与所述框架盖元件接触来夹紧所述载体片以抵靠所述辅助元件；以及
等离子切割所述半导体衬底。
所述工件支撑件可以包括工件支撑表面，所述工件支撑表面通过与载体片接触来支撑所述工件。所述工件支撑表面具有周边。所述框架构件可以限定所述工件的周边。所述工件的周边可以完全位于所述工件支撑表面的周边内。
所述工件支撑件可以是静电卡盘，并且所述静电卡盘接触载体膜的一部分可以是基本平坦且无特征部的上表面。
所述工件支撑件可以是用作所述辅助元件的静电卡盘，其中，所述静电卡盘提供作用在所述框架构件上的附加静电夹紧力。
在等离子切割所述半导体衬底的步骤完成之后，可以从所述腔室中移除所述工件，并且可以使所述框架盖元件与所述工件支撑件热接触。
虽然上文已经描述了本发明，但是它延伸至上文或者下面的说明书、附图或权利要求书中所陈述特征的任何发明组合。例如，关于本发明的第一方面所描述的任何特征被认为也在关于本发明的第二方面中公开。
附图说明
将参照附图描述根据本发明的设备和方法的实施方式，其中：
图1安装在具有附加热屏蔽件的真空处理腔室中的半导体衬底的横截面图；
图2是在连续的等离子处理之间发生的冷却阶段期间的真空处理腔室(来自图1)的横截面图；
图3是安装在夹紧销用于将环形框架夹紧到切割带的真空处理腔室中的半导体衬底的横截面图；
图4是在连续的等离子处理之间发生的冷却阶段期间的真空处理腔室(来自图3)的横截面图，其中夹紧销降低到ESC中的凹槽中；
图5是热屏蔽件优化设计在其降低位置的横截面图；
图6是热屏蔽件优化设计在其升高位置的横截面图；并且
图7示出了包括在带和框架载体上支撑的晶圆的工件的等离子切割。
具体实施方式
本发明的第一实施方式示出于图1中。半导体衬底11包括划线12和离散的半导体芯片13。半导体衬底11通常由硅构成，然而，可以使用砷化镓和其它第III族～第V族半导体。半导体衬底11被粘附到切割带14上，切割带14位于静电卡盘15的顶部。环形框架16位于切割带14的顶部，使得切割带14被固定在环形框架16和静电卡盘15之间。半导体衬底11被设计成在环形框架16的定位中适应一定程度的非同心度，通常为±3mm。框架组件17包括半导体衬底11、切割带14和环形框架16。切割带14通常由聚烯烃、聚(氯乙烯)或聚(对苯二甲酸乙二醇酯)组成。环形框架16通常由不锈钢或塑料构成。框架组件17和静电卡盘15的表面积被选择成：使得静电卡盘15延伸超过环形框架16的直径并且含有冷却剂气体通过的内部冷却通道18。高电压可被施加到静电卡盘15，以向框架组件17提供第一夹紧力。静电夹紧机制能够在框架组件17和静电卡盘15之间存在良好的热接触。此外，静电卡盘15不含在环形框架16的直径内的任何表面特征部，以便使在框架组件17和静电卡盘15之间的热接触最大。在框架组件17和静电卡盘15之间的良好热接触有助于在等离子处理期间保持框架组件17冷却，并防止切割带14的热老化。通过使用框架盖110，屏蔽环形框架16以免直接暴露于等离子19。
在本发明的一个实施方式中，框架盖110与环形框架16热接触良好。通过使用热屏蔽件111可以为框架盖110提供针对等离子19的额外保护。如果采用热屏蔽件111，则框架盖110由导热性高的材料例如铝组成。然而，如果不使用热屏蔽件111，则框架盖110将与等离子19直接接触，并且优选导热性低的材料，诸如氧化铝或其它陶瓷材料。热屏蔽件111通常由导热性差的材料例如氧化铝或其他陶瓷材料组成。热屏蔽件111和框架盖110之间的接触部112最小或不存在，以使热屏蔽件111和框架盖110之间的热路径最小化。因此，等离子19直接加热热屏蔽件111，但是热量不会朝向框架组件17渗透。环形框架16、框架盖110和热屏蔽件111的重量提供了切割带14到静电卡盘15的第二夹紧机制。第二夹紧机制也可以通过使用主动夹紧力来实现。主动夹紧力可以通过使用平台安装及称重的夹具或其它夹紧装置来实现。主动夹紧力可以直接施加到热屏蔽件111、框架盖110、环形框架16或其组合，以便获得切割带14到静电卡盘15的第二夹紧机制。如图2所示，在等离子处理完成并且冷却阶段开始之后，从真空处理腔室113中移除框架组件17。在连续的等离子处理开始之前冷却框架盖110。通过降低框架盖110来实现冷却效果，使得在框架盖110和静电卡盘15之间具有大的接触面积。框架盖110由导热性高的材料例如铝组成，并且与静电卡盘15形成良好的热接触。在框架盖110和静电卡盘15之间良好的热接触使得热量能够容易地从框架盖110中耗散并且能够有效冷却框架盖110。
在本发明的第二实施方式中，通过使用如图3所示的夹紧销30，从上方到静电卡盘35机械地夹紧框架组件17。夹持销30是起始于框架盖31下侧的突起，并且在框架盖31和环形框架16之间形成差的热接触。框架盖31可以提供有以热屏蔽件111的方式针对等离子19的额外保护。如果采用热屏蔽件111，则框架盖31由导热性高的材料例如铝组成。然而，如果不使用热屏蔽件111，则框架盖31将与等离子19直接接触，并且优选导热性低的材料，诸如氧化铝或其它陶瓷材料。
如图4所示，在等离子处理完成并且冷却阶段开始之后，从真空处理腔室113中移除框架组件17。在连续的等离子处理开始之前冷却框架盖31。通过降低框架盖31来实现冷却效果，使得其与经热调节的静电卡盘35直接接触。在本发明的这个实施方式中，夹紧销30插入到位于静电卡盘35中的互补凹槽32中。这确保了在框架盖31和静电卡盘35之间高的接触面积和良好的热接触，以在冷却阶段期间有效冷却框架盖31。
在本发明的第三实施方式中，环形框架16直接位于屏蔽环50的顶部。屏蔽环50是围绕静电卡盘55的环状部件。如图5所示，通过使用框架盖51和热屏蔽件52来提供针对等离子19的热保护。屏蔽环50通常由导热性高的材料例如铝组成，并且与真空处理腔室53的壁保持接触。使真空处理腔室53的壁保持在合适的温度，通常为约55℃。热屏蔽件52为框架盖51提供热保护。热屏蔽52仅仅搁置在屏蔽环50上，并且在等离子处理期间不接触框架盖51。热屏蔽件52经由一系列等距分散的突起诸如尖头54而与屏蔽环50接触。热屏蔽件52可以包括带状盖56形式的延伸部，以保护切割带14。带状盖通常由导热性差的材料例如氧化铝或其他陶瓷材料组成。热屏蔽件52和带状盖56在等离子19视线的直线上，并且可达到超过150℃的温度。热屏蔽件52和带状盖56吸收来自等离子19的热辐射，但是由于突起54与屏蔽环50的不良热接触，热量不容易传递到屏蔽环50。这有助于使热屏蔽件52和带状盖56保持高温。热屏蔽件52和带状盖56形成热屏蔽，从而使得框架盖51比现有技术的设计更凉。然后相对凉的框架盖51还形成围绕框架16的热屏蔽件。这保护框架16免受来自热屏蔽件52和带状盖56的辐射和对流的热量传递。有利地，热屏蔽件52和带状盖56的高温防止特定沉积物的积聚，这增加了在清洁过程期间的可用寿命。框架盖51经由一系列等距离分散的突起诸如尖头57而与环形框架16接触，这些突起起到将环形框架16机械地夹紧到屏蔽环50的作用。机械夹紧力可以是框架盖51的重量的结果，或者可以采用额外的夹紧力。突起57和环形框架16之间的接触面积最小，这导致差的热接触。相对凉的框架盖51与突起57和框架16之间差的热接触的组合意味着：能够使用塑料框架而没有显著的损伤风险。也可以使用金属框架。
为了从真空处理腔室113中移除框架组件17，使用升降销(lifting pin)60升高环形框架16和框架盖51。图6示出了升降销60处于升高位置的真空处理腔室的横截面图。通过使用距离分散的突起诸如尖头61，来保持热屏蔽件52和框架盖51之间的差的热接触。突起61的最小接触面积使热屏蔽件52到框架盖51的散热最小化。每组突起54和57具有用于插入它们的相应凹槽，这能够在使用升降销时使框架盖51、热屏蔽件52和屏蔽环50自对准。

Claims (27)

1.一种用于等离子切割半导体衬底的设备，所述半导体衬底为形成工件的一部分的类型，所述工件进一步包括在框架构件上的载体片，其中，所述载体片承载所述半导体衬底，
所述设备包括：
腔室；
等离子产生装置，所述等离子产生装置被配置成在所述腔室内产生适于切割所述半导体衬底的等离子；
工件支撑件，所述工件支撑件位于所述腔室中，用于通过与所述载体片接触来支撑所述工件；
框架盖元件，所述框架盖元件被配置成在使用时接触所述框架构件，从而夹紧所述载体片以抵靠设置在所述腔室中的辅助元件。
2.根据权利要求1所述的设备，其中，所述辅助元件是所述工件支撑件。
3.根据权利要求1所述的设备，其中，所述辅助元件是屏蔽环，所述屏蔽环设置在所述工件支撑件周围。
4.根据权利要求3所述的设备，其中，所述屏蔽环与所述腔室热接触。
5.根据权利要求1至4中任一项所述的设备，进一步包括热屏蔽件，所述热屏蔽件设置在所述框架盖元件上以对所述框架盖元件热屏蔽所述等离子。
6.根据权利要求5所述的设备，其中，所述热屏蔽件与所述框架盖元件间隔开。
7.根据权利要求6所述的设备，其中，所述热屏蔽件被支撑在所述辅助元件上。
8.根据权利要求5所述的设备，其中，所述热屏蔽件与所述框架盖元件接触。
9.根据权利要求8所述的设备，其中，所述热屏蔽件包括接触所述框架盖元件的一个或多个突起。
10.根据权利要求5至9中任一项所述的设备，其中，所述热屏蔽件由陶瓷材料形成。
11.根据前述权利要求中任一项所述的设备，其中，不存在对所述框架盖元件热屏蔽所述等离子的热屏蔽件。
12.根据前述权利要求中任一项所述的设备，进一步包括至少一个夹具，所述夹具将夹紧力施加到所述框架盖元件，以辅助所述框架盖元件夹紧所述支撑片以抵靠所述辅助元件。
13.根据前述权利要求中任一项所述的设备，其中，所述框架盖元件包括基本平坦的下表面，所述下表面在使用时接触所述框架构件。
14.根据权利要求1至12中任一项所述的设备，其中，所述框架盖元件包括一个或多个突起，所述突起在使用时接触所述框架构件。
15.根据权利要求14所述的设备，其中，所述辅助元件包括一个或多个开口，所述开口用于当在所述工件支撑件上不存在工件时接收所述框架盖元件的所述突起。
16.根据前述权利要求中任一项所述的设备，被配制成：当在所述工件支撑件上不存在工件时，所述框架盖元件能与所述辅助元件热接触。
17.根据前述权利要求中任一项所述的设备，其中，所述框架盖元件由金属或陶瓷材料形成。
18.根据前述权利要求中任一项所述的设备，其中，所述工件支撑件是静电卡盘。
19.根据前述权利要求中任一项所述的设备，进一步包括升降机构，所述升降机构用于降低和升高所述框架以与所述工件支撑件接触和脱离接触，并且用于降低和升高所述框架盖元件与所述框架构件和可选的所述工件支撑件接触和脱离接触。
20.与包括所述半导体衬底的工件和在框架构件上的载体片结合的根据前述权利要求中任一项所述的设备，其中，所述载体片支撑所述半导体衬底，所述工件支撑件通过与所述载体片接触来支撑所述工件，而所述框架构件被所述框架盖元件夹紧。
21.根据权利要求20所述的设备，其中，所述工件支撑件包括工件支撑表面，所述工件支撑表面具有周边并且通过与所述载体片接触来支撑所述工件；所述框架构件限定所述工件的周边；并且所述工件的周边完全位于所述工件支撑表面的周边内。
22.根据权利要求21所述的设备，其中，所述载体片包括由聚合物材料和可选的粘合剂形成的带。
23.一种用于等离子切割半导体衬底的方法，所述半导体衬底为形成工件的一部分的类型，所述工件进一步包括在框架构件上的载体片，其中，所述载体片承载半导体衬底，所述方法包括以下步骤：
提供根据权利要求1所述的设备；
通过使所述载体片与所述工件支撑件接触来支撑所述工件；
通过使所述框架构件与所述框架盖元件接触来夹紧所述载体片以抵靠所述辅助元件；
等离子切割所述半导体衬底。
24.根据权利要求23所述的方法，其中，所述工件支撑件包括工件支撑表面，所述工件支撑表面具有周边，并且通过与所述载体片接触来支撑所述工件；所述框架构件限定所述工件的周边；并且所述工件的周边完全位于所述工件支撑表面的周边内。
25.根据权利要求23或24所述的方法，其中，所述工件支撑件是静电卡盘，并且所述静电卡盘接触载体膜的部分是基本平坦且无特征部的上表面。
26.根据权利要求23至25中任一项所述的方法，其中，所述工件支撑件是用作所述辅助元件的静电卡盘，其中，所述静电卡盘提供作用在所述框架构件上的附加静电夹紧力。
27.根据权利要求23至26中任一项所述的方法，其中，在等离子切割所述半导体衬底的步骤完成之后，从所述腔室中移除所述工件，并且使所述框架盖元件与所述工件支撑件热接触。
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