TWI700385B - 製備薄膜的方法 - Google Patents

製備薄膜的方法 Download PDF

Info

Publication number
TWI700385B
TWI700385B TW108121644A TW108121644A TWI700385B TW I700385 B TWI700385 B TW I700385B TW 108121644 A TW108121644 A TW 108121644A TW 108121644 A TW108121644 A TW 108121644A TW I700385 B TWI700385 B TW I700385B
Authority
TW
Taiwan
Prior art keywords
precursor
group
process temperature
film
butyl
Prior art date
Application number
TW108121644A
Other languages
English (en)
Chinese (zh)
Other versions
TW202022153A (zh
Inventor
安宰奭
朴鐘律
任民赫
昔壯衒
朴正佑
Original Assignee
韓商韓松化學有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 韓商韓松化學有限公司 filed Critical 韓商韓松化學有限公司
Publication of TW202022153A publication Critical patent/TW202022153A/zh
Application granted granted Critical
Publication of TWI700385B publication Critical patent/TWI700385B/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/12—Organo silicon halides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
TW108121644A 2018-11-30 2019-06-21 製備薄膜的方法 TWI700385B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20180152678 2018-11-30
KR10-2018-0152678 2018-11-30
KR10-2019-0011855 2019-01-30
KR1020190011855A KR102157137B1 (ko) 2018-11-30 2019-01-30 실리콘 전구체 및 이를 이용한 실리콘 함유 박막의 제조방법

Publications (2)

Publication Number Publication Date
TW202022153A TW202022153A (zh) 2020-06-16
TWI700385B true TWI700385B (zh) 2020-08-01

Family

ID=71082074

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108121644A TWI700385B (zh) 2018-11-30 2019-06-21 製備薄膜的方法

Country Status (5)

Country Link
US (1) US11267828B2 (ko)
JP (1) JP6941181B2 (ko)
KR (1) KR102157137B1 (ko)
CN (1) CN111511752A (ko)
TW (1) TWI700385B (ko)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103058696A (zh) * 2012-12-14 2013-04-24 西北工业大学 一种氮化硅基体的制备方法
CN103374708A (zh) * 2012-04-12 2013-10-30 气体产品与化学公司 氧化硅薄膜的高温原子层沉积
CN104911561A (zh) * 2015-04-14 2015-09-16 中国计量科学研究院 制备高厚度均匀性纳米/亚微米SiO2薄膜的方法
TW201536946A (zh) * 2014-03-26 2015-10-01 Air Prod & Chem 用於沉積氧化矽膜的組合物及方法
TW201718606A (zh) * 2015-11-23 2017-06-01 韓松化學有限公司 原子層沈積用有機金屬前驅物化合物、沉積有其的薄膜以及薄膜製造方法
CN108118309A (zh) * 2017-12-11 2018-06-05 安徽宝辰机电设备科技有限公司 一种耐高温飞溅物的中频点焊机机壳表面处理方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2800210B2 (ja) * 1988-12-19 1998-09-21 セイコーエプソン株式会社 電界効果トランジスタの製造方法
JP2684942B2 (ja) 1992-11-30 1997-12-03 日本電気株式会社 化学気相成長法と化学気相成長装置および多層配線の製造方法
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
US7208427B2 (en) 2003-08-18 2007-04-24 Advanced Technology Materials, Inc. Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing
US7875312B2 (en) * 2006-05-23 2011-01-25 Air Products And Chemicals, Inc. Process for producing silicon oxide films for organoaminosilane precursors
US8080282B2 (en) 2006-08-08 2011-12-20 Asm Japan K.K. Method for forming silicon carbide film containing oxygen
JP5119832B2 (ja) 2007-09-27 2013-01-16 富士通株式会社 界面ラフネス緩和膜、配線層、半導体装置および半導体装置の製造方法
KR101444707B1 (ko) 2008-06-03 2014-09-26 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 실리콘 함유 막의 저온 증착
US8129555B2 (en) * 2008-08-12 2012-03-06 Air Products And Chemicals, Inc. Precursors for depositing silicon-containing films and methods for making and using same
JP2012151386A (ja) * 2011-01-21 2012-08-09 Hitachi Kokusai Electric Inc ノズル取付方法
EP3929326A3 (en) * 2011-06-03 2022-03-16 Versum Materials US, LLC Compositions and processes for depositing carbon-doped silicon-containing films
US8993072B2 (en) 2011-09-27 2015-03-31 Air Products And Chemicals, Inc. Halogenated organoaminosilane precursors and methods for depositing films comprising same
KR20140067786A (ko) 2012-11-27 2014-06-05 주식회사 유피케미칼 실리콘 전구체 화합물, 및 상기 전구체 화합물을 이용한 실리콘-함유 박막의 증착 방법
US9824881B2 (en) 2013-03-14 2017-11-21 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
JP2015146416A (ja) 2014-01-06 2015-08-13 住友電気工業株式会社 炭化珪素基板用支持部材、炭化珪素成長装置用部材、および炭化珪素エピタキシャル基板の製造方法
JP6387799B2 (ja) 2014-11-14 2018-09-12 株式会社デンソー 半導体基板およびその製造方法
US10421766B2 (en) 2015-02-13 2019-09-24 Versum Materials Us, Llc Bisaminoalkoxysilane compounds and methods for using same to deposit silicon-containing films
US10283348B2 (en) * 2016-01-20 2019-05-07 Versum Materials Us, Llc High temperature atomic layer deposition of silicon-containing films
US20180033614A1 (en) * 2016-07-27 2018-02-01 Versum Materials Us, Llc Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
CN108411279B (zh) 2018-03-30 2019-07-09 华中科技大学 一种高速钢刀具保护涂层的制备方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103374708A (zh) * 2012-04-12 2013-10-30 气体产品与化学公司 氧化硅薄膜的高温原子层沉积
CN103058696A (zh) * 2012-12-14 2013-04-24 西北工业大学 一种氮化硅基体的制备方法
TW201536946A (zh) * 2014-03-26 2015-10-01 Air Prod & Chem 用於沉積氧化矽膜的組合物及方法
TW201708593A (zh) * 2014-03-26 2017-03-01 氣體產品及化學品股份公司 氧化矽膜及用於沉積氧化矽膜的前驅物
CN104911561A (zh) * 2015-04-14 2015-09-16 中国计量科学研究院 制备高厚度均匀性纳米/亚微米SiO2薄膜的方法
TW201718606A (zh) * 2015-11-23 2017-06-01 韓松化學有限公司 原子層沈積用有機金屬前驅物化合物、沉積有其的薄膜以及薄膜製造方法
CN108118309A (zh) * 2017-12-11 2018-06-05 安徽宝辰机电设备科技有限公司 一种耐高温飞溅物的中频点焊机机壳表面处理方法

Also Published As

Publication number Publication date
KR20200066122A (ko) 2020-06-09
KR102157137B1 (ko) 2020-09-17
JP6941181B2 (ja) 2021-09-29
CN111511752A (zh) 2020-08-07
US20210277031A1 (en) 2021-09-09
TW202022153A (zh) 2020-06-16
US11267828B2 (en) 2022-03-08
JP2021509765A (ja) 2021-04-01

Similar Documents

Publication Publication Date Title
TWI656232B (zh) 鉬組成物及其用於形成氧化鉬膜之用途
TWI248472B (en) Precursors for depositing silicon containing films and processes thereof
US9663547B2 (en) Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films
JP6876145B2 (ja) ビス（アミノシリル）アルキルアミン化合物を含むシリコン含有薄膜蒸着用組成物、およびそれを用いたシリコン含有薄膜の製造方法
US9868753B2 (en) Germanium- and zirconium-containing composition for vapor deposition of zirconium-containing films
JP7436054B2 (ja) シリコン前駆体化合物、製造方法、及びこれを利用するシリコン含有膜の形成方法
CN109585264B (zh) 一种氮化硅薄膜的可流动化学气相沉积方法
CN114929937B (zh) 硅前体化合物、包含该硅前体化合物的用于形成含硅膜的组合物以及用于形成含硅膜的方法
CN110461953B (zh) 甲硅烷基胺化合物、含其的用于沉积含硅薄膜的组合物及使用组合物制造含硅薄膜的方法
JP7164789B2 (ja) ５５０℃以上の温度でＡＬＤを使用してＳｉ含有膜を堆積させるための前駆体及びプロセス
TWI828980B (zh) 製造氧化矽薄膜的方法
TWI700385B (zh) 製備薄膜的方法
KR101934773B1 (ko) 저온에서의 실리콘-함유 박막 형성방법
EP3766888A1 (en) Silicon precursor and method of manufacturing silicon-containing thin film using the same
KR102491073B1 (ko) 실리콘 전구체 화합물, 이를 포함하는 실리콘-함유 막 형성용 조성물, 및 실리콘-함유 막 형성용 조성물을 이용한 막 형성 방법
JP7337257B2 (ja) 新規なシリルシクロジシラザン化合物およびこれを用いたシリコン含有薄膜の製造方法
TWI776109B (zh) 在550°C或更高的溫度下使用ALD沈積含Si膜之先質及製程
JP2008007471A (ja) 有機金属化学蒸着法用原料及び該原料を用いたシリコン含有膜の製造方法