TWI700149B - Grinding device - Google Patents

Grinding device Download PDF

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Publication number
TWI700149B
TWI700149B TW105122231A TW105122231A TWI700149B TW I700149 B TWI700149 B TW I700149B TW 105122231 A TW105122231 A TW 105122231A TW 105122231 A TW105122231 A TW 105122231A TW I700149 B TWI700149 B TW I700149B
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Taiwan
Prior art keywords
turntable
motor
grinding
polishing
partition
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TW105122231A
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Chinese (zh)
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TW201711799A (en
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山中聡
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日商迪思科股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/02—Lapping machines or devices; Accessories designed for working surfaces of revolution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
    • B24B55/03—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant designed as a complete equipment for feeding or clarifying coolant
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

防止電動機的發熱所致之熱波及轉盤，讓轉盤不會熱變形。 Prevent the heat caused by the heating of the motor from spreading to the turntable, so that the turntable will not be thermally deformed.

研磨裝置(1)係具備具有使吸盤台(50a，50b)旋轉之電動機(54)的2以上的保持手段(5a，5b)、保持手段(5a，5b)被均等間隔地配設且旋轉的轉盤(3)、及配設於轉盤(3)上，並將2以上的吸盤台(50a，50b)之間予以區隔的區隔部(6)，電動機(54)係配設於轉盤(3)上；區隔部(6)係具有將配設於轉盤(3)上的電動機(54)，收容於內側的凹部(60)；藉由使研磨用水(22)接觸區隔部(6)的外側面(61)，冷卻區隔部(6)與電動機(54)，故電動機(54)的發熱所致之熱不會波及轉盤(3)。因此，可防止轉盤(3)熱變形，將晶圓(W)加工成所定研磨厚度。 The polishing device (1) is equipped with 2 or more holding means (5a, 5b) and holding means (5a, 5b) with a motor (54) that rotates the suction table (50a, 50b), and the holding means (5a, 5b) are arranged and rotated at equal intervals The turntable (3), and the partition (6) that is arranged on the turntable (3) and separates the 2 or more suction cup tables (50a, 50b), the motor (54) is arranged on the turntable ( 3) Upper; the partition part (6) is provided with the electric motor (54) arranged on the turntable (3), and the recess (60) on the inner side; by making the grinding water (22) contact the partition part (6) The outer surface (61) of ), the cooling zone partition (6) and the motor (54), so the heat caused by the heating of the motor (54) will not spread to the turntable (3). Therefore, thermal deformation of the turntable (3) can be prevented, and the wafer (W) can be processed to a predetermined polishing thickness.

Description

研磨裝置 Grinding device

本發明係關於具備保持晶圓之複數吸盤台的研磨裝置。 The present invention relates to a polishing device provided with a plurality of chuck tables for holding wafers.

於轉盤上具有保持晶圓之2以上的吸盤台之類型的研磨裝置，係藉由使轉盤旋轉，使其分別位於使各吸盤台公轉而加工晶圓的加工區域，與搬出入晶圓的搬出入區域，研磨位於加工區域的晶圓。晶圓的研磨中，係在加工區域中使用的研磨用水及研磨屑會散射，故在位於加工區域的吸盤台與位於搬出入區域的吸盤台之間設置區隔板，遮斷加工區域與搬出入區域(例如，參照後述之專利文獻1及2)。 A polishing device with a suction table that holds more than 2 wafers on the turntable. The turntable is rotated so that it is located in the processing area where each suction table revolves to process the wafer, and the wafer is moved in and out. Into the area, grind the wafer located in the processing area. During wafer polishing, the polishing water and polishing debris used in the processing area are scattered. Therefore, a partition is installed between the suction table located in the processing area and the suction table located in the loading/unloading area to block the processing area and the removal Enter the area (for example, refer to Patent Documents 1 and 2 described later).

前述之吸盤台係可在轉盤上旋轉，例如作為將使吸盤台旋轉的電動機直接連結於吸盤台的下部的構造。又，圖5所示先前的研磨裝置40為兩個吸盤台42配設成可在轉盤41上旋轉，於各吸盤台42的下方側配設電動機43的構造。於各電動機43，分別安裝驅動滑輪44，並且於連結於各吸盤台42之下部的旋轉軸420分別安裝 從動滑輪45，於驅動滑輪44與從動滑輪45分別捲繞於皮帶46。如此，即使任一構造之狀況中，都於轉盤的下側配置電動機，故容易進行電動機的交換作業。 The aforementioned chuck table is rotatable on a turntable, for example, as a structure in which a motor that rotates the chuck table is directly connected to the lower part of the chuck table. In addition, the conventional polishing apparatus 40 shown in FIG. 5 has a structure in which two chuck tables 42 are arranged so as to be rotatable on the turntable 41, and a motor 43 is arranged below each chuck table 42. The drive pulley 44 is attached to each motor 43, and the rotation shaft 420 connected to the lower part of each suction table 42 is attached to each The driven pulley 45 is wound around the belt 46 in the driving pulley 44 and the driven pulley 45, respectively. In this way, even in the situation of any structure, the electric motor is arranged on the lower side of the turntable, so that it is easy to exchange the electric motor.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2013-255952號公報 [Patent Document 1] JP 2013-255952 A

[專利文獻2]日本特開2013-086244號公報 [Patent Document 2] JP 2013-086244 A

但是，於轉盤的下側配置電動機的構造中，電動機的發熱所致之熱傳達至轉盤，故轉盤會熱變形，發生被研磨之晶圓不會成為所定厚度的加工不良。 However, in the structure in which the motor is arranged on the lower side of the turntable, the heat generated by the heat of the motor is transmitted to the turntable, so the turntable is thermally deformed, and the polished wafer does not become defective in processing of a predetermined thickness.

本發明係有鑑於前述的情況所發明者，目的為防止電動機的發熱所致之熱波及轉盤，讓轉盤不會熱變形。 The present invention is the inventor in view of the aforementioned circumstances, and aims to prevent the heat caused by the heating of the motor from spreading to the turntable, so that the turntable will not be thermally deformed.

本發明是一種研磨裝置，係具備：2以上的保持手段，係具有使保持晶圓之吸盤台旋轉的電動機；轉盤，係2以上的該保持手段被均等間隔地配設且旋轉；區隔部，係配設於該轉盤上，並將2以上的吸盤台之間予以區隔；研磨手段，係具有研磨被該吸盤台保持之晶圓的研 磨砥石；及研磨用水供給手段，係對晶圓與該研磨砥石供給研磨用水；其特徵為：該電動機，係配設於該轉盤上；該區隔部，係具有將配設於該轉盤上的該電動機，收容於內側的凹部；藉由使該研磨用水接觸該區隔部的外側，冷卻該區隔部與被該區隔部收容的該電動機。 The present invention is a polishing device, which is provided with: 2 or more holding means, which has a motor that rotates a chuck table holding wafers; a turntable, where 2 or more holding means are evenly arranged and rotated; partitions , Is arranged on the turntable, and separates the 2 or more sucker tables; the grinding means is a grinding method that grinds the wafer held by the sucker table Grinding stone; and grinding water supply means for supplying grinding water to the wafer and the grinding stone; characterized in that: the motor is arranged on the turntable; the partition part is provided with a device that will be arranged on the turntable The motor is housed in the inner recess; by contacting the grinding water to the outside of the compartment, the compartment and the motor housed in the compartment are cooled.

本發明相關的研磨裝置係具備具有使吸盤台旋轉的電動機之2以上的保持手段、2以上的保持手段被均等間隔地配設且旋轉的轉盤、配設於轉盤上，並將2以上的吸盤台之間予以區隔的區隔部、具有研磨晶圓的研磨砥石的研磨手段、及對晶圓與該研磨砥石供給研磨用水的研磨用水供給手段，電動機係配設於轉盤上，故易發熱之電動機的上部從轉盤露出，電動機的發熱所致之熱不會傳達至轉盤。 The polishing device related to the present invention is equipped with 2 or more holding means with a motor that rotates the chuck table, 2 or more holding means are arranged and rotated at even intervals, and arranged on the turntable, and 2 or more suckers The partition between the stages, the grinding means for polishing the grinding stone for polishing the wafer, and the grinding water supplying means for supplying the grinding water to the wafer and the grinding stone, the electric motor is arranged on the turntable, so it is easy to generate heat The upper part of the motor is exposed from the turntable, and the heat caused by the heating of the motor will not be transmitted to the turntable.

又，區隔部係具有將配設於轉盤上之電動機收容於內側的凹部，故於該凹部收容電動機之狀態下，藉由使研磨用水接觸區隔部的外側，冷卻區隔部與電動機，可讓熱影響不會波及轉盤。 In addition, the partition part has a recess for accommodating the motor arranged on the turntable inside. Therefore, in a state where the motor is accommodated in the recess, by contacting the polishing water with the outside of the partition, the partition and the motor are cooled, It can prevent heat influence from spreading to the turntable.

藉此，在晶圓的研磨中防止轉盤熱變形，晶圓不會發生加工不良。 This prevents thermal deformation of the turntable during the polishing of the wafer, and the wafer does not suffer from processing defects.

1‧‧‧研磨裝置 1‧‧‧Grinding device

2‧‧‧裝置基座 2‧‧‧Device base

2a，2b‧‧‧上面 2a, 2b‧‧‧top

3‧‧‧轉盤 3‧‧‧Turntable

3a‧‧‧旋轉軸 3a‧‧‧Rotation axis

4‧‧‧轉盤護蓋 4‧‧‧Turntable cover

4‧‧‧電動機 4‧‧‧Motor

5a，5b‧‧‧保持手段 5a, 5b‧‧‧Keeping means

6‧‧‧區隔部 6‧‧‧Division

7‧‧‧吸引源 7‧‧‧Attraction source

8‧‧‧空氣供給源 8‧‧‧Air supply source

9‧‧‧支柱 9‧‧‧Pillars

10‧‧‧研磨手段 10‧‧‧Grinding method

11‧‧‧主軸 11‧‧‧Spindle

12‧‧‧主軸殼體 12‧‧‧Spindle housing

13‧‧‧電動機 13‧‧‧Motor

14‧‧‧固定機 14‧‧‧Fixed machine

15‧‧‧研磨輪 15‧‧‧Grinding wheel

16‧‧‧研磨砥石 16‧‧‧Grinding Whetstone

20‧‧‧研磨用水供給手段 20‧‧‧Grinding water supply means

21‧‧‧研磨用水供給源 21‧‧‧Grinding water supply source

22‧‧‧研磨用水 22‧‧‧Grinding water

30‧‧‧研磨進給手段 30‧‧‧Grinding feed method

31‧‧‧滾珠螺絲 31‧‧‧Ball screw

32‧‧‧電動機 32‧‧‧Motor

33‧‧‧導引軌道 33‧‧‧Guide track

34‧‧‧升降部 34‧‧‧Elevator

40‧‧‧研磨裝置 40‧‧‧Grinding device

41‧‧‧轉盤 41‧‧‧Turntable

42‧‧‧吸盤台 42‧‧‧Suction table

43‧‧‧電動機 43‧‧‧Motor

44‧‧‧驅動滑輪 44‧‧‧Drive pulley

45‧‧‧從動滑輪 45‧‧‧Driven pulley

46‧‧‧皮帶 46‧‧‧Belt

50a，50b‧‧‧吸盤台 50a, 50b‧‧‧Suction table

51‧‧‧保持面 51‧‧‧Keep the surface

52‧‧‧旋轉軸 52‧‧‧Rotating axis

53‧‧‧旋轉接頭 53‧‧‧Rotary joint

54‧‧‧電動機 54‧‧‧Motor

55‧‧‧驅動滑輪 55‧‧‧Drive pulley

56‧‧‧從動滑輪 56‧‧‧Driven pulley

57‧‧‧皮帶 57‧‧‧Belt

60‧‧‧凹部 60‧‧‧Concave

61‧‧‧外側面 61‧‧‧Outer side

100‧‧‧接觸部分 100‧‧‧Contact part

420‧‧‧旋轉軸 420‧‧‧Rotating axis

540‧‧‧上部 540‧‧‧Upper

P1‧‧‧加工區域 P1‧‧‧Processing area

P2‧‧‧搬出入區域 P2‧‧‧Move in and out of the area

W‧‧‧晶圓 W‧‧‧wafer

[圖1]揭示研磨裝置的構造的立體圖。 [Fig. 1] A perspective view showing the structure of the polishing device.

[圖2]揭示研磨裝置的構造之一部分的剖面圖。 [Fig. 2] A sectional view showing a part of the structure of the polishing device.

[圖3]揭示研磨被吸盤台保持的晶圓之狀態的剖面圖。 [Fig. 3] A cross-sectional view showing the state of polishing a wafer held by a chuck table.

[圖4]揭示研磨時所使用的研磨用水散射之方向的俯視圖。 [Figure 4] A plan view showing the direction in which the polishing water used for polishing is scattered.

[圖5]揭示先前之研磨裝置的構造之一部分的剖面圖。 [Fig. 5] A cross-sectional view showing a part of the structure of the previous polishing device.

圖1所示之研磨裝置1，係具備保持被加工物即晶圓W之複數吸盤台的研磨裝置之一例，具有裝置基座2。於裝置基座2的Y軸方向前部側的上面2a，具備具有保持晶圓W之吸盤台50a、50b與使該等旋轉之電動機54的2以上的保持手段5a、5b、保持手段5a、5b被均等間隔地配設且旋轉的轉盤3、及配設於轉盤3上，將2以上的吸盤台50a、50b之間予以區隔的區隔部6。 The polishing apparatus 1 shown in FIG. 1 is an example of a polishing apparatus provided with a plurality of chuck tables for holding wafers W as a workpiece, and has an apparatus base 2. On the upper surface 2a of the device base 2 on the front side in the Y-axis direction, there are two or more holding means 5a, 5b, holding means 5a, and holding means 5a, 50b having chuck tables 50a, 50b for holding wafers W, and a motor 54 that rotates the same. 5b is the turntable 3 which is arranged and rotated at equal intervals, and the partition 6 which is arranged on the turntable 3 and partitions the 2 or more suction table 50a, 50b.

於裝置基座2之Y軸方向後部側的上面2b，豎立設置有向Z軸方向延伸的支柱9。於支柱9的側方，隔著研磨進給手段30，配設具有研磨被吸盤台50a、50b保持的晶圓W之研磨砥石16的研磨手段10。 On the upper surface 2b of the device base 2 on the rear side in the Y-axis direction, a support 9 extending in the Z-axis direction is erected. On the side of the pillar 9, a polishing means 10 having a polishing wheel 16 for polishing the wafer W held by the chuck tables 50a and 50b is arranged via the polishing feeding means 30.

研磨手段10係藉由具有Z軸方向之軸心的主軸11、支持且可繞主軸11旋轉的主軸殼體12、連接於主軸11的一端的電動機13、連接於主軸11的下端的固定 機(mounter)14、可旋轉地安裝於固定機14的研磨輪15、及環狀固接於研磨輪15之下部的研磨砥石16所構成。藉由電動機13使主軸11以所定旋轉速度旋轉，可讓研磨輪15以所定旋轉速度旋轉。 The grinding means 10 is made up of a spindle 11 having a shaft center in the Z-axis direction, a spindle housing 12 that is supported and rotatable around the spindle 11, a motor 13 connected to one end of the spindle 11, and a fixing device connected to the lower end of the spindle 11 A mounter 14, a grinding wheel 15 rotatably mounted on the fixed machine 14, and a grinding wheel 16 fixed to the lower part of the grinding wheel 15 in a ring shape are constituted. The motor 13 rotates the main shaft 11 at a predetermined rotation speed, so that the grinding wheel 15 can be rotated at a predetermined rotation speed.

於研磨手段10，連接有具有研磨用水供給源21的研磨用水供給手段20。研磨用水供給手段20係在晶圓W的研磨時，可從研磨用水供給源21對研磨砥石16與晶圓W的接觸部分供給研磨用水。再者，作為研磨用水，例如使用純水。 To the polishing means 10, a polishing water supply means 20 having a polishing water supply source 21 is connected. The polishing water supply means 20 is configured to supply polishing water from the polishing water supply source 21 to the contact portion of the polishing stone 16 and the wafer W during polishing of the wafer W. In addition, as the grinding water, for example, pure water is used.

研磨進給手段30係藉由向Z軸方向延伸的滾珠螺絲31、連接於滾珠螺絲31的一端的電動機32、與滾珠螺絲31平行延伸之一對導引軌道33、及內部所具備之螺帽螺合於滾珠螺絲31，並且側部滑接於導引軌道33，研磨手段10固定於一方之面的升降部34所構成。研磨進給手段30係被電動機32驅動而滾珠螺絲31旋動，藉由沿著一對導引軌道33使升降部34向Z軸方向移動，可與升降部34一起使研磨手段10向Z軸方向升降。 The grinding and feeding means 30 is provided by a ball screw 31 extending in the Z-axis direction, a motor 32 connected to one end of the ball screw 31, a pair of guide rails 33 extending parallel to the ball screw 31, and a nut provided inside It is screwed to the ball screw 31, and the side part is slidably connected to the guide rail 33, and the grinding means 10 is fixed to the lifting part 34 on one side. The grinding and feeding means 30 is driven by the motor 32 to rotate the ball screw 31. By moving the lifting part 34 in the Z-axis direction along a pair of guide rails 33, the grinding means 10 can be moved to the Z-axis together with the lifting part 34 Direction lift.

於轉盤3的上面，安裝有覆蓋轉盤3的轉盤護蓋4。隔著該轉盤護蓋4，保持手段5a、5b與區隔部6配設於轉盤3上。轉盤3以圖2所示之旋轉軸3a為中心旋轉的話，則可使保持手段5a、5b公轉，在對晶圓W研磨加工的加工區域P1與搬出入晶圓W的搬出入區域P2之間使保持手段5a、5b依序移動。再者，保持手段5b係與保持手段5a相同構造，故以下針對保持手段5a的構造 詳細說明。 On the top of the turntable 3, a turntable cover 4 covering the turntable 3 is installed. The holding means 5a, 5b and the partition 6 are arranged on the turntable 3 with the turntable cover 4 interposed therebetween. If the turntable 3 rotates around the rotating shaft 3a shown in FIG. 2, the holding means 5a, 5b can be revolved between the processing area P1 where the wafer W is polished and the load-out area P2 where the wafer W is loaded and unloaded. The holding means 5a and 5b are moved sequentially. Furthermore, the holding means 5b has the same structure as the holding means 5a, so the following is for the structure of the holding means 5a Detailed description.

如圖1所示，構成保持手段5a的吸盤台50a的上面，成為保持晶圓W的保持面51。保持面51係例如藉由多孔陶瓷等的多孔質構件所形成。於吸盤台50a的下端，如圖2所示，連結有具有垂直方向之軸心的旋轉軸52。於旋轉軸52，連接旋轉接頭53，於旋轉接頭53，連接有連通於吸盤台50a之保持面51的吸引源7，與連通於轉盤3之下面的空氣供給源8。然後，藉由吸引源7使吸引力作用於吸盤台50a的保持面51時，可利用保持面51吸引保持晶圓W，藉由從空氣供給源8向轉盤3的下面噴吹空氣，可使轉盤3浮起。 As shown in FIG. 1, the upper surface of the chuck table 50 a constituting the holding means 5 a serves as a holding surface 51 for holding the wafer W. The holding surface 51 is formed of, for example, a porous member such as porous ceramic. At the lower end of the suction table 50a, as shown in FIG. 2, a rotating shaft 52 having a vertical axis is connected. The rotary shaft 52 is connected with a rotary joint 53, and the rotary joint 53 is connected with a suction source 7 communicating with the holding surface 51 of the suction table 50 a and an air supply source 8 communicating with the lower surface of the turntable 3. Then, when suction is applied to the holding surface 51 of the suction table 50a by the suction source 7, the holding surface 51 can be used to attract and hold the wafer W. By blowing air from the air supply source 8 to the lower surface of the turntable 3, The turntable 3 floats.

於旋轉軸52，連接有在轉盤3上使吸盤台50a旋轉的旋轉機構。旋轉機構係如圖2所示，藉由配設於轉盤3上的電動機54、安裝於電動機54的驅動滑輪55、安裝於旋轉軸52的從動滑輪56、及捲繞於驅動滑輪55與從動滑輪56的皮帶57所構成。再者，在圖2的範例中雖未圖示，但是，於吸盤台50b側也連接有與吸盤台50a相同的旋轉機構。 To the rotating shaft 52, a rotating mechanism for rotating the chuck table 50a on the turntable 3 is connected. The rotating mechanism is shown in Fig. 2, with a motor 54 arranged on the turntable 3, a drive pulley 55 installed on the electric motor 54, a driven pulley 56 installed on the rotating shaft 52, and wound around the drive pulley 55 and the driven pulley 56 of the belt 57 constituted. In addition, although not shown in the example in FIG. 2, the same rotation mechanism as the suction table 50a is also connected to the suction table 50b side.

電動機54係以從轉盤3上突出之方式配設。亦即，成為藉由使電動機54的驅動時易發熱的上部540從轉盤3露出，電動機54的熱不會傳達至轉盤3的配置構造。然後，藉由電動機54驅動驅動滑輪55時，皮帶57使從動滑輪56從動，可與旋轉軸52一起使吸盤台50a旋轉。 The electric motor 54 is arranged so as to protrude from the turntable 3. That is, by exposing the upper part 540 that easily generates heat when the motor 54 is driven, from the turntable 3, the heat of the motor 54 is not transmitted to the turntable 3. Then, when the driving pulley 55 is driven by the motor 54, the belt 57 will follow the driven pulley 56 and the suction table 50 a can be rotated together with the rotating shaft 52.

區隔部6係如圖1所示，延伸於X軸方向，配置於吸盤台50a與吸盤台50b之間。藉由利用區隔部6將吸盤台50a、50b之間予以區隔，於研磨時遮斷加工區域P1與搬出入區域P2。如此，藉由區隔部6，可防止加工區域P1中使用的研磨用水等散射至位於搬出入區域P2的吸盤台50a或吸盤台50b。 As shown in FIG. 1, the partition 6 extends in the X-axis direction, and is disposed between the suction table 50a and the suction table 50b. By using the partition 6 to partition the suction table 50a, 50b, the processing area P1 and the carry-in area P2 are blocked during polishing. In this way, the partition 6 can prevent the polishing water used in the processing area P1 from being scattered to the suction table 50a or the suction table 50b located in the carry-in area P2.

區隔部6係如圖2所示，至少在兩處(圖2中僅圖示1處)具有用以將配設於轉盤3上的各電動機54收容於內側的凹部60。於該凹部60，收容有保持手段5a、5b的各電動機54。因此，藉由研磨時從研磨用水供給源21供給至研磨砥石16與晶圓W的研磨用水接觸區隔部6的外側面61，可冷卻區隔部6與被區隔部6的凹部60收容的電動機54。再者，區隔部6之上端面62的高度位置，係位於至少比吸盤台50a、50b的保持面51還高的位置即可。 As shown in FIG. 2, the partition portion 6 has at least two recesses 60 (only one is shown in FIG. 2) for accommodating the motors 54 arranged on the turntable 3 inside. In this recessed part 60, each electric motor 54 of holding means 5a, 5b is accommodated. Therefore, by supplying the polishing water supply 21 from the polishing water supply source 21 to the outer surface 61 of the polishing water contact partition 6 of the polishing stone 16 and the wafer W during polishing, the partition 6 and the recess 60 of the partition 6 can be cooled and accommodated. The electric motor 54. In addition, the height position of the upper end surface 62 of the partition 6 may be at least higher than the holding surface 51 of the suction table 50a, 50b.

接著，針對研磨裝置1的動作例進行說明。圖1所示之晶圓W，係被加工物的一例，並不是限定其材質及厚度等者。首先，將晶圓W搬送至例如在搬出入區域P2待機的吸盤台50a。 Next, an operation example of the polishing device 1 will be described. The wafer W shown in FIG. 1 is an example of a to-be-processed object, and is not limited to its material and thickness. First, the wafer W is transported to, for example, the chuck table 50a on standby in the carry-in area P2.

利用吸盤台50a的保持面51吸引保持晶圓W之後，藉由使轉盤3旋轉，使吸盤台50a往加工區域P1移動。具體來說，將從空氣供給源8送來的空氣向轉盤3的下面噴吹而使其浮起之狀態下，使轉盤3向例如箭頭A方向旋轉。然後，伴隨轉盤3的旋轉，使吸盤台50a往研 磨手段10的下方移動。 After the wafer W is sucked and held by the holding surface 51 of the chuck table 50a, the turntable 3 is rotated to move the chuck table 50a to the processing area P1. Specifically, in a state where the air sent from the air supply source 8 is blown to the lower surface of the turntable 3 to float, the turntable 3 is rotated in the direction of arrow A, for example. Then, with the rotation of the turntable 3, the suction table 50a is moved The grinding means 10 moves below.

接下來，如圖3所示，藉由電動機54的驅動，使吸盤台50a往例如箭頭A方向旋轉，並且研磨手段10一邊藉由使主軸11旋轉，使研磨輪15往例如箭頭A方向旋轉，一邊藉由圖1所示之研磨進給手段30，使研磨手段10往接近吸盤台50a的保持面51的方向下降，利用一邊旋轉一邊下降的研磨砥石16，對晶圓W一邊按壓一邊研磨至成為所定厚度為止。 Next, as shown in FIG. 3, the suction table 50a is rotated in the direction of arrow A by the drive of the motor 54, and the grinding means 10 rotates the spindle 11 to rotate the grinding wheel 15 in the direction of arrow A, for example, While lowering the grinding means 10 toward the holding surface 51 of the suction table 50a by the grinding and feeding means 30 shown in FIG. 1, the grinding wheel 16 that descends while rotating is used to grind the wafer W while pressing it to Until it becomes the predetermined thickness.

此時，如圖3所示，從研磨用水供給源21對晶圓W與研磨砥石16的接觸部分供給研磨用水22，冷卻研磨砥石16並且洗掉研磨屑。研磨用水22係散射至旋轉之研磨砥石16的周圍，但是，接觸區隔部6的外側面61而被遮斷，故研磨用水22不會散射至吸盤台50b。 At this time, as shown in FIG. 3, the polishing water 22 is supplied from the polishing water supply source 21 to the contact portion between the wafer W and the polishing stone 16 to cool the polishing stone 16 and wash off the polishing debris. The polishing water 22 is scattered around the rotating polishing stone 16, but is blocked by contacting the outer surface 61 of the partition 6, so the polishing water 22 will not be scattered to the suction table 50b.

在此，研磨用水22散射的方向係如圖4所示，伴隨吸盤台50a及研磨砥石16的旋轉，朝向被區隔部6的內部收容的電動機54側。亦即，研磨用水22係從實際上研磨砥石16接觸研磨晶圓W的接觸部分100朝向箭頭B方向散射。因此，可有效率地使研磨用水22接觸對應收容電動機54的位置之區隔部6的外側面61，可冷卻區隔部6與被區隔部6收容的電動機54。 Here, the direction in which the polishing water 22 is scattered is, as shown in FIG. 4, with the rotation of the chuck table 50 a and the polishing wheel 16, it faces the motor 54 housed in the partition 6. That is, the polishing water 22 is scattered from the contact portion 100 where the polishing stone 16 actually contacts the polishing wafer W toward the arrow B direction. Therefore, the polishing water 22 can be efficiently brought into contact with the outer surface 61 of the partition 6 corresponding to the position where the motor 54 is accommodated, and the partition 6 and the motor 54 accommodated in the partition 6 can be cooled.

晶圓W的研磨中，係從圖3所示之研磨用水供給源21經常將研磨用水22持續供給至晶圓W與研磨砥石16，使研磨用水22持續接觸區隔部6的外側面61。如此一來，藉由研磨用水22的冷卻作用，利用時常冷卻 電動機54的上部540，去除電動機54的熱，讓熱影響不會波及轉盤3。 In the polishing of the wafer W, the polishing water 22 is constantly supplied to the wafer W and the polishing stone 16 from the polishing water supply source 21 shown in FIG. 3, so that the polishing water 22 continuously contacts the outer surface 61 of the partition 6. In this way, with the cooling effect of the grinding water 22, the constant cooling The upper part 540 of the electric motor 54 removes the heat of the electric motor 54 so that the heat influence does not affect the turntable 3.

將晶圓W研磨成所定厚度之後，圖4所示之轉盤3更加旋轉，使吸盤台50a移動至搬出入區域P2，並且使保持未加工之晶圓W的吸盤台50b移動至加工區域P1，重覆進行與前述相同的研磨動作。 After the wafer W is ground to a predetermined thickness, the turntable 3 shown in FIG. 4 rotates further to move the chuck table 50a to the carry-in/out area P2, and move the chuck table 50b holding the unprocessed wafer W to the processing area P1. Repeat the same polishing operation as described above.

如此，本發明相關的研磨裝置1係具備具有使吸盤台50a、50b旋轉之電動機54的2以上的保持手段5a、5b、保持手段5a、5b被均等間隔地配設且旋轉的轉盤3、及配設於轉盤3上，將吸盤台50a、50b之間予以區隔的區隔部6，且使電動機54突出配設於轉盤3上，故電動機54的熱不會傳達至轉盤3。。又，區隔部6係具有將電動機54收容於內側的凹部60，故在將電動機54收容於區隔部6的凹部60之狀態下，藉由使研磨用水22接觸區隔部6的外側面61，可冷卻區隔部6與電動機54，熱影響不會波及轉盤3。如此，研磨時轉盤3不會熱變形，可將晶圓W加工成所定研磨厚度。 Thus, the polishing apparatus 1 related to the present invention is provided with two or more holding means 5a, 5b having a motor 54 that rotates the chuck tables 50a, 50b, a turntable 3 in which the holding means 5a, 5b are evenly arranged and rotated, and The partition 6 is arranged on the turntable 3 to separate the suction tables 50a and 50b, and the motor 54 is arranged to protrude from the turntable 3, so the heat of the motor 54 is not transmitted to the turntable 3. . In addition, the partition 6 has a recess 60 for accommodating the motor 54 inside. Therefore, when the motor 54 is accommodated in the recess 60 of the partition 6, the polishing water 22 is brought into contact with the outer surface of the partition 6 61. The partition 6 and the motor 54 can be cooled, and the heat influence will not affect the turntable 3. In this way, the turntable 3 will not be thermally deformed during polishing, and the wafer W can be processed to a predetermined polishing thickness.

研磨裝置1係常為使電動機54從轉盤3突出的配置構造，但是，可從轉盤3的下方側進行電動機54的交換，故與先前同樣地可容易進行電動機的交換作業。 The polishing device 1 is always arranged so that the electric motor 54 protrudes from the turntable 3. However, the electric motor 54 can be exchanged from the lower side of the turntable 3, so the exchange of the electric motor can be easily performed as before.

在本實施形態中，將1個區隔部6配設於吸盤台50a、50b之間，但是並不限定於該構造，可因應配設於轉盤的吸盤台的數量，變更區隔部6的數量、形狀及配設位置。 In this embodiment, one partition 6 is arranged between the suction table 50a, 50b, but it is not limited to this structure, and the number of the partition 6 can be changed according to the number of suction tables arranged on the turntable. Quantity, shape and location.

又，在本實施形態1中，成為具備1個研磨手段10的構造，但是並不限定於該構造。例如，具備兩個研磨手段(粗研磨手段及完成研磨手段)亦可，具備研削手段亦可。 In addition, in the first embodiment, the structure includes one polishing means 10, but it is not limited to this structure. For example, two grinding means (a rough grinding means and a finishing grinding means) may be provided, or a grinding means may be provided.

1‧‧‧研磨裝置 1‧‧‧Grinding device

2‧‧‧裝置基座 2‧‧‧Device base

2a，2b‧‧‧上面 2a, 2b‧‧‧top

3‧‧‧轉盤 3‧‧‧Turntable

4‧‧‧轉盤護蓋 4‧‧‧Turntable cover

5a，5b‧‧‧保持手段 5a, 5b‧‧‧Keeping means

6‧‧‧區隔部 6‧‧‧Division

9‧‧‧支柱 9‧‧‧Pillars

10‧‧‧研磨手段 10‧‧‧Grinding method

11‧‧‧主軸 11‧‧‧Spindle

12‧‧‧主軸殼體 12‧‧‧Spindle housing

13‧‧‧電動機 13‧‧‧Motor

14‧‧‧固定機 14‧‧‧Fixed machine

15‧‧‧研磨輪 15‧‧‧Grinding wheel

16‧‧‧研磨砥石 16‧‧‧Grinding Whetstone

20‧‧‧研磨用水供給手段 20‧‧‧Grinding water supply means

21‧‧‧研磨用水供給源 21‧‧‧Grinding water supply source

30‧‧‧研磨進給手段 30‧‧‧Grinding feed method

31‧‧‧滾珠螺絲 31‧‧‧Ball screw

32‧‧‧電動機 32‧‧‧Motor

33‧‧‧導引軌道 33‧‧‧Guide track

34‧‧‧升降部 34‧‧‧Elevator

50a，50b‧‧‧吸盤台 50a, 50b‧‧‧Suction table

51‧‧‧保持面 51‧‧‧Keep the surface

54‧‧‧電動機 54‧‧‧Motor

P1‧‧‧加工區域 P1‧‧‧Processing area

P2‧‧‧搬出入區域 P2‧‧‧Move in and out of the area

W‧‧‧晶圓 W‧‧‧wafer

Claims (1)

一種研磨裝置，係具備：2以上的保持手段，係具有使保持晶圓之吸盤台旋轉的電動機；轉盤，係2以上的該保持手段被均等間隔地配設且旋轉；區隔部，係配設於該轉盤上，並將2以上的該吸盤台之間予以區隔；研磨手段，係具有研磨被該吸盤台保持之晶圓的研磨砥石；及研磨用水供給手段，係對晶圓與該研磨砥石供給研磨用水；其特徵為：該電動機，係配設於該轉盤上；該區隔部，係具有將配設於該轉盤上的該電動機，收容於內側的凹部；藉由使該研磨用水接觸該區隔部的外側，冷卻該區隔部與被該區隔部收容的該電動機。 A polishing device is provided with: 2 or more holding means, a motor that rotates a chuck table holding a wafer; a turntable, where 2 or more holding means are evenly spaced and rotated; a partition part is attached It is installed on the turntable and separates the chuck tables above 2; the grinding means is a grinding wheel that grinds the wafer held by the chuck table; and the grinding water supply means is for the wafer and the The grinding stone is supplied with water for grinding; it is characterized in that: the electric motor is arranged on the turntable; the partition part has a concave part that accommodates the electric motor arranged on the turntable inside; by making the grinding The outer side of the partition is contacted with water to cool the partition and the motor contained in the partition.
TW105122231A 2015-08-27 2016-07-14 Grinding device TWI700149B (en)

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KR102343155B1 (en) 2021-12-23
CN106475899B (en) 2020-11-24

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