TW201711799A - Grinding apparatus for preventing high temperature generated by the heat of an electric motor from influencing a turntable - Google Patents
Grinding apparatus for preventing high temperature generated by the heat of an electric motor from influencing a turntable Download PDFInfo
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- TW201711799A TW201711799A TW105122231A TW105122231A TW201711799A TW 201711799 A TW201711799 A TW 201711799A TW 105122231 A TW105122231 A TW 105122231A TW 105122231 A TW105122231 A TW 105122231A TW 201711799 A TW201711799 A TW 201711799A
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- Prior art keywords
- turntable
- polishing
- grinding
- motor
- electric motor
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000005498 polishing Methods 0.000 claims description 75
- 238000005192 partition Methods 0.000 claims description 35
- 238000000638 solvent extraction Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 abstract 4
- 235000012431 wafers Nutrition 0.000 description 38
- 229910052902 vermiculite Inorganic materials 0.000 description 6
- 235000019354 vermiculite Nutrition 0.000 description 6
- 239000010455 vermiculite Substances 0.000 description 6
- 230000001680 brushing effect Effects 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/02—Lapping machines or devices; Accessories designed for working surfaces of revolution
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
- B24B55/03—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant designed as a complete equipment for feeding or clarifying coolant
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
Description
本發明係關於具備保持晶圓之複數吸盤台的研磨裝置。 The present invention relates to a polishing apparatus having a plurality of suction cup holders for holding wafers.
於轉盤上具有保持晶圓之2以上的吸盤台之類型的研磨裝置，係藉由使轉盤旋轉，使其分別位於使各吸盤台公轉而加工晶圓的加工區域，與搬出入晶圓的搬出入區域，研磨位於加工區域的晶圓。晶圓的研磨中，係在加工區域中使用的研磨用水及研磨屑會散射，故在位於加工區域的吸盤台與位於搬出入區域的吸盤台之間設置區隔板，遮斷加工區域與搬出入區域(例如，參照後述之專利文獻1及2)。 A polishing apparatus having a type of a chuck table that holds two or more wafers on a turntable is placed in a processing area for processing a wafer by revolving each of the chucks by rotating the turntable, and moving out of the wafer. Into the area, grinding the wafers located in the processing area. In the polishing of the wafer, the polishing water and the polishing dust used in the processing area are scattered. Therefore, a partition plate is provided between the suction table located in the processing area and the suction table located in the loading and unloading area, and the processing area and the removal are interrupted. The area is entered (for example, refer to Patent Documents 1 and 2 to be described later).
前述之吸盤台係可在轉盤上旋轉，例如作為將使吸盤台旋轉的電動機直接連結於吸盤台的下部的構造。又，圖5所示先前的研磨裝置40為兩個吸盤台42配設成可在轉盤41上旋轉，於各吸盤台42的下方側配設電動機43的構造。於各電動機43，分別安裝驅動滑輪44，並且於連結於各吸盤台42之下部的旋轉軸420分別安裝 從動滑輪45，於驅動滑輪44與從動滑輪45分別捲繞於皮帶46。如此，即使任一構造之狀況中，都於轉盤的下側配置電動機，故容易進行電動機的交換作業。 The aforementioned chuck table can be rotated on the turntable, for example, as a structure in which the motor that rotates the chuck table is directly coupled to the lower portion of the chuck table. Further, the conventional polishing apparatus 40 shown in FIG. 5 has a structure in which the two chuck tables 42 are arranged to be rotatable on the turntable 41, and the motor 43 is disposed on the lower side of each of the chuck tables 42. The drive pulleys 44 are attached to the respective motors 43 and are respectively mounted on the rotating shafts 420 connected to the lower portions of the respective chuck tables 42. The driven pulley 45 is wound around the belt 46 on the drive pulley 44 and the driven pulley 45, respectively. As described above, even in the case of any configuration, the motor is disposed on the lower side of the turntable, so that the exchange work of the motor is facilitated.
[專利文獻1]日本特開2013-255952號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2013-255952
[專利文獻2]日本特開2013-086244號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2013-086244
但是，於轉盤的下側配置電動機的構造中，電動機的發熱所致之熱傳達至轉盤，故轉盤會熱變形，發生被研磨之晶圓不會成為所定厚度的加工不良。 However, in the structure in which the motor is disposed on the lower side of the turntable, heat generated by heat generation of the motor is transmitted to the turntable, so that the turntable is thermally deformed, and the wafer to be polished does not become a processing defect of a predetermined thickness.
本發明係有鑑於前述的情況所發明者，目的為防止電動機的發熱所致之熱波及轉盤，讓轉盤不會熱變形。 The present invention has been made in view of the above circumstances, and an object thereof is to prevent heat waves and a turntable caused by heat generation of an electric motor, and to prevent the turntable from being thermally deformed.
本發明是一種研磨裝置，係具備：2以上的保持手段，係具有使保持晶圓之吸盤台旋轉的電動機；轉盤，係2以上的該保持手段被均等間隔地配設且旋轉；區隔部，係配設於該轉盤上，並將2以上的吸盤台之間予以區隔；研磨手段，係具有研磨被該吸盤台保持之晶圓的研 磨砥石；及研磨用水供給手段，係對晶圓與該研磨砥石供給研磨用水；其特徵為：該電動機，係配設於該轉盤上；該區隔部，係具有將配設於該轉盤上的該電動機，收容於內側的凹部；藉由使該研磨用水接觸該區隔部的外側，冷卻該區隔部與被該區隔部收容的該電動機。 The present invention relates to a polishing apparatus comprising: 2 or more holding means having a motor for rotating a chuck table for holding a wafer; and a turntable, wherein the holding means of 2 or more are disposed and rotated at equal intervals; , is disposed on the turntable, and separates between two or more suction cups; the grinding means has the grinding of the wafer held by the suction table And a grinding water supply means for supplying polishing water to the wafer and the grinding vermiculite; wherein the motor is disposed on the turntable; the partition is provided on the turntable The motor is housed in a recessed portion on the inner side, and the polishing water is brought into contact with the outer side of the partition portion to cool the partition portion and the motor housed in the partition portion.
本發明相關的研磨裝置係具備具有使吸盤台旋轉的電動機之2以上的保持手段、2以上的保持手段被均等間隔地配設且旋轉的轉盤、配設於轉盤上，並將2以上的吸盤台之間予以區隔的區隔部、具有研磨晶圓的研磨砥石的研磨手段、及對晶圓與該研磨砥石供給研磨用水的研磨用水供給手段，電動機係配設於轉盤上，故易發熱之電動機的上部從轉盤露出，電動機的發熱所致之熱不會傳達至轉盤。 In the polishing apparatus according to the present invention, a holding device having two or more motors for rotating the chuck table, a rotating device in which two or more holding means are disposed and rotated at equal intervals, and a turntable are disposed on the turntable, and two or more suction cups are provided. a partitioning portion between the stages, a polishing means for polishing the vermiculite for polishing the wafer, and a polishing water supply means for supplying the polishing water to the wafer and the polishing vermice, and the motor is disposed on the turntable, so that the heat is easily generated The upper portion of the motor is exposed from the turntable, and heat generated by the heat of the motor is not transmitted to the turntable.
又，區隔部係具有將配設於轉盤上之電動機收容於內側的凹部，故於該凹部收容電動機之狀態下，藉由使研磨用水接觸區隔部的外側，冷卻區隔部與電動機，可讓熱影響不會波及轉盤。 Further, the partition portion has a recessed portion in which the motor disposed on the turntable is housed inside. Therefore, when the recessed portion accommodates the motor, the polishing water contacts the outside of the partition portion, and the cooling partition portion and the motor are cooled. Allows heat to not affect the turntable.
藉此，在晶圓的研磨中防止轉盤熱變形，晶圓不會發生加工不良。 Thereby, the thermal deformation of the turntable is prevented during the polishing of the wafer, and the wafer does not suffer from processing defects.
1‧‧‧研磨裝置 1‧‧‧ grinding device
2‧‧‧裝置基座 2‧‧‧ device base
2a，2b‧‧‧上面 2a, 2b‧‧‧above
3‧‧‧轉盤 3‧‧‧ Turntable
3a‧‧‧旋轉軸 3a‧‧‧Rotary axis
4‧‧‧轉盤護蓋 4‧‧‧ Turntable cover
4‧‧‧電動機 4‧‧‧Electric motor
5a，5b‧‧‧保持手段 5a, 5b‧‧‧ means of keeping
6‧‧‧區隔部 6‧‧‧section
7‧‧‧吸引源 7‧‧‧Attraction
8‧‧‧空氣供給源 8‧‧‧Air supply source
9‧‧‧支柱 9‧‧‧ pillar
10‧‧‧研磨手段 10‧‧‧ grinding means
11‧‧‧主軸 11‧‧‧ Spindle
12‧‧‧主軸殼體 12‧‧‧ spindle housing
13‧‧‧電動機 13‧‧‧Electric motor
14‧‧‧固定機 14‧‧‧Fixed machine
15‧‧‧研磨輪 15‧‧‧ grinding wheel
16‧‧‧研磨砥石 16‧‧‧ grinding diamonds
20‧‧‧研磨用水供給手段 20‧‧‧Brushing water supply means
21‧‧‧研磨用水供給源 21‧‧‧Brushing water supply source
22‧‧‧研磨用水 22‧‧‧ Grinding water
30‧‧‧研磨進給手段 30‧‧‧Drying feed means
31‧‧‧滾珠螺絲 31‧‧‧Ball screws
32‧‧‧電動機 32‧‧‧Electric motor
33‧‧‧導引軌道 33‧‧‧Guided orbit
34‧‧‧升降部 34‧‧‧ Lifting Department
40‧‧‧研磨裝置 40‧‧‧ grinding device
41‧‧‧轉盤 41‧‧‧ Turntable
42‧‧‧吸盤台 42‧‧‧Sucker table
43‧‧‧電動機 43‧‧‧Electric motor
44‧‧‧驅動滑輪 44‧‧‧ drive pulley
45‧‧‧從動滑輪 45‧‧‧driven pulley
46‧‧‧皮帶 46‧‧‧Land
50a，50b‧‧‧吸盤台 50a, 50b‧‧‧ suction cup
51‧‧‧保持面 51‧‧‧ Keep face
52‧‧‧旋轉軸 52‧‧‧Rotary axis
53‧‧‧旋轉接頭 53‧‧‧Rotary joint
54‧‧‧電動機 54‧‧‧Electric motor
55‧‧‧驅動滑輪 55‧‧‧ drive pulley
56‧‧‧從動滑輪 56‧‧‧driven pulley
57‧‧‧皮帶 57‧‧‧Land
60‧‧‧凹部 60‧‧‧ recess
61‧‧‧外側面 61‧‧‧Outside
100‧‧‧接觸部分 100‧‧‧Contact section
420‧‧‧旋轉軸 420‧‧‧Rotary axis
540‧‧‧上部 540‧‧‧ upper
P1‧‧‧加工區域 P1‧‧‧Processing area
P2‧‧‧搬出入區域 P2‧‧‧ moving in and out of the area
W‧‧‧晶圓 W‧‧‧ wafer
[圖1]揭示研磨裝置的構造的立體圖。 Fig. 1 is a perspective view showing the configuration of a polishing apparatus.
[圖2]揭示研磨裝置的構造之一部分的剖面圖。 Fig. 2 is a cross-sectional view showing a part of a configuration of a polishing apparatus.
[圖3]揭示研磨被吸盤台保持的晶圓之狀態的剖面圖。 FIG. 3 is a cross-sectional view showing a state in which a wafer held by a chuck table is polished.
[圖4]揭示研磨時所使用的研磨用水散射之方向的俯視圖。 Fig. 4 is a plan view showing a direction in which polishing water used for polishing is scattered.
[圖5]揭示先前之研磨裝置的構造之一部分的剖面圖。 Fig. 5 is a cross-sectional view showing a part of a configuration of a prior grinding device.
圖1所示之研磨裝置1，係具備保持被加工物即晶圓W之複數吸盤台的研磨裝置之一例，具有裝置基座2。於裝置基座2的Y軸方向前部側的上面2a，具備具有保持晶圓W之吸盤台50a、50b與使該等旋轉之電動機54的2以上的保持手段5a、5b、保持手段5a、5b被均等間隔地配設且旋轉的轉盤3、及配設於轉盤3上，將2以上的吸盤台50a、50b之間予以區隔的區隔部6。 The polishing apparatus 1 shown in FIG. 1 is an example of a polishing apparatus including a plurality of suction cups that hold a workpiece W as a workpiece, and has a device base 2. The upper surface 2a of the front side of the apparatus base 2 in the Y-axis direction is provided with holding means 5a and 5b for holding the wafer table 50a and 50b of the wafer W, and two or more holding means 5a and 5b for holding the motor 54 for rotation, and a holding means 5a. 5b is a turntable 3 that is disposed and rotated at equal intervals, and a partition portion 6 that is disposed on the turntable 3 and that partitions between the two or more suction cups 50a and 50b.
於裝置基座2之Y軸方向後部側的上面2b，豎立設置有向Z軸方向延伸的支柱9。於支柱9的側方，隔著研磨進給手段30，配設具有研磨被吸盤台50a、50b保持的晶圓W之研磨砥石16的研磨手段10。 A pillar 9 extending in the Z-axis direction is erected on the upper surface 2b of the apparatus base 2 on the rear side in the Y-axis direction. On the side of the pillars 9, a polishing means 10 for polishing the diamonds 16 of the wafers W held by the chucking stations 50a, 50b is disposed via the polishing feed means 30.
研磨手段10係藉由具有Z軸方向之軸心的主軸11、支持且可繞主軸11旋轉的主軸殼體12、連接於主軸11的一端的電動機13、連接於主軸11的下端的固定 機(mounter)14、可旋轉地安裝於固定機14的研磨輪15、及環狀固接於研磨輪15之下部的研磨砥石16所構成。藉由電動機13使主軸11以所定旋轉速度旋轉，可讓研磨輪15以所定旋轉速度旋轉。 The polishing means 10 is a spindle housing 11 having an axis center in the Z-axis direction, a spindle housing 12 supported and rotatable around the spindle 11, a motor 13 connected to one end of the spindle 11, and a lower end connected to the spindle 11. A mounter 14 is provided, which is rotatably attached to the grinding wheel 15 of the fixing machine 14, and a grinding stone 16 that is annularly fixed to the lower portion of the grinding wheel 15. By rotating the main shaft 11 at a predetermined rotational speed by the motor 13, the grinding wheel 15 can be rotated at a predetermined rotational speed.
於研磨手段10，連接有具有研磨用水供給源21的研磨用水供給手段20。研磨用水供給手段20係在晶圓W的研磨時，可從研磨用水供給源21對研磨砥石16與晶圓W的接觸部分供給研磨用水。再者，作為研磨用水，例如使用純水。 A polishing water supply means 20 having a polishing water supply source 21 is connected to the polishing means 10. When the polishing water supply means 20 is used for polishing the wafer W, the polishing water can be supplied from the polishing water supply source 21 to the contact portion between the polishing vermiculite 16 and the wafer W. Further, as the polishing water, for example, pure water is used.
研磨進給手段30係藉由向Z軸方向延伸的滾珠螺絲31、連接於滾珠螺絲31的一端的電動機32、與滾珠螺絲31平行延伸之一對導引軌道33、及內部所具備之螺帽螺合於滾珠螺絲31，並且側部滑接於導引軌道33，研磨手段10固定於一方之面的升降部34所構成。研磨進給手段30係被電動機32驅動而滾珠螺絲31旋動，藉由沿著一對導引軌道33使升降部34向Z軸方向移動，可與升降部34一起使研磨手段10向Z軸方向升降。 The grinding feed means 30 is a ball screw 31 extending in the Z-axis direction, a motor 32 connected to one end of the ball screw 31, a pair of guide rails 33 extending in parallel with the ball screw 31, and a nut provided inside. The ball screw 31 is screwed to the guide rail 33, and the polishing means 10 is fixed to the lifting portion 34 on one side. The polishing feed means 30 is driven by the motor 32 and the ball screw 31 is rotated. By moving the lifting portion 34 in the Z-axis direction along the pair of guiding rails 33, the grinding means 10 can be moved to the Z-axis together with the lifting portion 34. Direction up and down.
於轉盤3的上面，安裝有覆蓋轉盤3的轉盤護蓋4。隔著該轉盤護蓋4，保持手段5a、5b與區隔部6配設於轉盤3上。轉盤3以圖2所示之旋轉軸3a為中心旋轉的話，則可使保持手段5a、5b公轉，在對晶圓W研磨加工的加工區域P1與搬出入晶圓W的搬出入區域P2之間使保持手段5a、5b依序移動。再者，保持手段5b係與保持手段5a相同構造，故以下針對保持手段5a的構造 詳細說明。 On the upper surface of the turntable 3, a turntable cover 4 covering the turntable 3 is mounted. The holding means 5a, 5b and the partition portion 6 are disposed on the turntable 3 via the turntable cover 4. When the turntable 3 is rotated about the rotating shaft 3a shown in FIG. 2, the holding means 5a and 5b can be revolved between the processing region P1 for polishing the wafer W and the loading and unloading region P2 for loading and unloading the wafer W. The holding means 5a, 5b are sequentially moved. Further, since the holding means 5b has the same structure as the holding means 5a, the structure of the holding means 5a will be described below. Detailed description.
如圖1所示，構成保持手段5a的吸盤台50a的上面，成為保持晶圓W的保持面51。保持面51係例如藉由多孔陶瓷等的多孔質構件所形成。於吸盤台50a的下端，如圖2所示，連結有具有垂直方向之軸心的旋轉軸52。於旋轉軸52，連接旋轉接頭53，於旋轉接頭53，連接有連通於吸盤台50a之保持面51的吸引源7，與連通於轉盤3之下面的空氣供給源8。然後，藉由吸引源7使吸引力作用於吸盤台50a的保持面51時，可利用保持面51吸引保持晶圓W，藉由從空氣供給源8向轉盤3的下面噴吹空氣，可使轉盤3浮起。 As shown in Fig. 1, the upper surface of the chuck table 50a constituting the holding means 5a serves as a holding surface 51 for holding the wafer W. The holding surface 51 is formed, for example, by a porous member such as porous ceramic. At the lower end of the suction cup table 50a, as shown in Fig. 2, a rotating shaft 52 having a central axis in the vertical direction is coupled. A rotary joint 53 is connected to the rotary shaft 52, and a suction source 7 that communicates with the holding surface 51 of the chuck table 50a and an air supply source 8 that communicates with the lower surface of the turntable 3 are connected to the rotary joint 53. Then, when the suction force is applied to the holding surface 51 of the chuck table 50a by the suction source 7, the wafer W can be sucked and held by the holding surface 51, and the air can be blown from the air supply source 8 to the lower surface of the turntable 3. The turntable 3 floats.
於旋轉軸52，連接有在轉盤3上使吸盤台50a旋轉的旋轉機構。旋轉機構係如圖2所示，藉由配設於轉盤3上的電動機54、安裝於電動機54的驅動滑輪55、安裝於旋轉軸52的從動滑輪56、及捲繞於驅動滑輪55與從動滑輪56的皮帶57所構成。再者，在圖2的範例中雖未圖示，但是，於吸盤台50b側也連接有與吸盤台50a相同的旋轉機構。 A rotating mechanism that rotates the chuck table 50a on the turntable 3 is connected to the rotating shaft 52. As shown in FIG. 2, the rotating mechanism is provided by a motor 54 disposed on the turntable 3, a drive pulley 55 attached to the motor 54, a driven pulley 56 attached to the rotating shaft 52, and a driven pulley 55 and a driven pulley. The belt 57 of 56 is formed. Further, although not shown in the example of Fig. 2, the same rotating mechanism as the chuck table 50a is also connected to the chuck table 50b side.
電動機54係以從轉盤3上突出之方式配設。亦即，成為藉由使電動機54的驅動時易發熱的上部540從轉盤3露出，電動機54的熱不會傳達至轉盤3的配置構造。然後，藉由電動機54驅動驅動滑輪55時，皮帶57使從動滑輪56從動，可與旋轉軸52一起使吸盤台50a旋轉。 The motor 54 is disposed to protrude from the turntable 3. In other words, the upper portion 540 which is easily heated by the driving of the motor 54 is exposed from the turntable 3, and the heat of the motor 54 is not transmitted to the arrangement of the turntable 3. Then, when the drive pulley 55 is driven by the motor 54, the belt 57 causes the driven pulley 56 to be driven, and the suction table 50a can be rotated together with the rotary shaft 52.
區隔部6係如圖1所示，延伸於X軸方向，配置於吸盤台50a與吸盤台50b之間。藉由利用區隔部6將吸盤台50a、50b之間予以區隔，於研磨時遮斷加工區域P1與搬出入區域P2。如此，藉由區隔部6，可防止加工區域P1中使用的研磨用水等散射至位於搬出入區域P2的吸盤台50a或吸盤台50b。 As shown in FIG. 1, the partition portion 6 extends in the X-axis direction and is disposed between the suction cup table 50a and the suction cup table 50b. The suction cups 50a and 50b are partitioned by the partition portion 6, and the processing region P1 and the loading/unloading region P2 are blocked during polishing. As described above, the partition portion 6 can prevent the polishing water or the like used in the processing region P1 from being scattered to the chuck table 50a or the chuck table 50b located in the carry-in/out area P2.
區隔部6係如圖2所示，至少在兩處(圖2中僅圖示1處)具有用以將配設於轉盤3上的各電動機54收容於內側的凹部60。於該凹部60，收容有保持手段5a、5b的各電動機54。因此，藉由研磨時從研磨用水供給源21供給至研磨砥石16與晶圓W的研磨用水接觸區隔部6的外側面61，可冷卻區隔部6與被區隔部6的凹部60收容的電動機54。再者，區隔部6之上端面62的高度位置，係位於至少比吸盤台50a、50b的保持面51還高的位置即可。 As shown in FIG. 2, the partition portion 6 has recesses 60 for accommodating the motors 54 disposed on the turntable 3 on the inside at least in two places (only one is shown in FIG. 2). In the recess 60, the motors 54 of the holding means 5a, 5b are housed. Therefore, the outer side surface 61 of the polishing water contact portion 6 of the polishing vermiculite 16 and the wafer W is supplied from the polishing water supply source 21 during polishing, and the cooling partition portion 6 and the concave portion 60 of the partition portion 6 can be accommodated. Motor 54. Further, the height position of the upper end surface 62 of the partition portion 6 may be located at least higher than the holding surface 51 of the suction cup tables 50a and 50b.
接著，針對研磨裝置1的動作例進行說明。圖1所示之晶圓W，係被加工物的一例，並不是限定其材質及厚度等者。首先，將晶圓W搬送至例如在搬出入區域P2待機的吸盤台50a。 Next, an operation example of the polishing apparatus 1 will be described. The wafer W shown in FIG. 1 is an example of a workpiece, and is not limited to the material and thickness thereof. First, the wafer W is transported to, for example, the chuck table 50a that is waiting in the carry-in/out area P2.
利用吸盤台50a的保持面51吸引保持晶圓W之後，藉由使轉盤3旋轉，使吸盤台50a往加工區域P1移動。具體來說，將從空氣供給源8送來的空氣向轉盤3的下面噴吹而使其浮起之狀態下，使轉盤3向例如箭頭A方向旋轉。然後，伴隨轉盤3的旋轉，使吸盤台50a往研 磨手段10的下方移動。 After the wafer W is held by the holding surface 51 of the chuck table 50a, the dial table 3 is rotated to move the chuck table 50a toward the processing region P1. Specifically, the turntable 3 is rotated in the direction of the arrow A in a state where the air sent from the air supply source 8 is blown to the lower surface of the turntable 3 to be floated. Then, with the rotation of the turntable 3, the suction cup table 50a is researched. The grinding means 10 moves below.
接下來，如圖3所示，藉由電動機54的驅動，使吸盤台50a往例如箭頭A方向旋轉，並且研磨手段10一邊藉由使主軸11旋轉，使研磨輪15往例如箭頭A方向旋轉，一邊藉由圖1所示之研磨進給手段30，使研磨手段10往接近吸盤台50a的保持面51的方向下降，利用一邊旋轉一邊下降的研磨砥石16，對晶圓W一邊按壓一邊研磨至成為所定厚度為止。 Next, as shown in FIG. 3, by the driving of the motor 54, the chuck table 50a is rotated in the direction of the arrow A, and the polishing means 10 rotates the grinding wheel 15 in the direction of the arrow A, for example, by rotating the spindle 11. The polishing means 10 is lowered in the direction of the holding surface 51 of the chuck table 50a by the grinding and feeding means 30 shown in Fig. 1, and the grinding stone 16 which is lowered while rotating is rotated to the wafer W while being pressed. It becomes the predetermined thickness.
此時，如圖3所示，從研磨用水供給源21對晶圓W與研磨砥石16的接觸部分供給研磨用水22，冷卻研磨砥石16並且洗掉研磨屑。研磨用水22係散射至旋轉之研磨砥石16的周圍，但是，接觸區隔部6的外側面61而被遮斷，故研磨用水22不會散射至吸盤台50b。 At this time, as shown in FIG. 3, the polishing water 22 is supplied from the polishing water supply source 21 to the contact portion of the wafer W and the polishing vermicite 16, and the grinding stone 16 is cooled and the polishing dust is washed away. The polishing water 22 is scattered around the rotating grinding stone 16 but is blocked by the outer surface 61 of the contact portion 6, so that the polishing water 22 is not scattered to the suction table 50b.
在此，研磨用水22散射的方向係如圖4所示，伴隨吸盤台50a及研磨砥石16的旋轉，朝向被區隔部6的內部收容的電動機54側。亦即，研磨用水22係從實際上研磨砥石16接觸研磨晶圓W的接觸部分100朝向箭頭B方向散射。因此，可有效率地使研磨用水22接觸對應收容電動機54的位置之區隔部6的外側面61，可冷卻區隔部6與被區隔部6收容的電動機54。 Here, the direction in which the polishing water 22 is scattered is as shown in FIG. 4, and is directed toward the motor 54 side accommodated inside the partition portion 6 with the rotation of the chuck table 50a and the grinding vermiculite 16. That is, the polishing water 22 is scattered from the contact portion 100 where the grinding vermiculite 16 is in contact with the polishing wafer W in the direction of the arrow B. Therefore, the polishing water 22 can be efficiently brought into contact with the outer side surface 61 of the partition portion 6 corresponding to the position at which the motor 54 is housed, and the partition portion 6 and the motor 54 housed in the partition portion 6 can be cooled.
晶圓W的研磨中，係從圖3所示之研磨用水供給源21經常將研磨用水22持續供給至晶圓W與研磨砥石16，使研磨用水22持續接觸區隔部6的外側面61。如此一來，藉由研磨用水22的冷卻作用，利用時常冷卻 電動機54的上部540，去除電動機54的熱，讓熱影響不會波及轉盤3。 In the polishing of the wafer W, the polishing water 22 is continuously supplied to the wafer W and the polishing vermicite 16 from the polishing water supply source 21 shown in FIG. 3, and the polishing water 22 is continuously brought into contact with the outer surface 61 of the partition portion 6. In this way, by the cooling action of the grinding water 22, it is often cooled. The upper portion 540 of the motor 54 removes heat from the motor 54 so that heat effects do not affect the turntable 3.
將晶圓W研磨成所定厚度之後，圖4所示之轉盤3更加旋轉，使吸盤台50a移動至搬出入區域P2，並且使保持未加工之晶圓W的吸盤台50b移動至加工區域P1，重覆進行與前述相同的研磨動作。 After the wafer W is polished to a predetermined thickness, the turntable 3 shown in FIG. 4 is further rotated, the chuck table 50a is moved to the carry-in/out area P2, and the chuck table 50b holding the unprocessed wafer W is moved to the processing area P1. The same polishing operation as described above is repeated.
如此，本發明相關的研磨裝置1係具備具有使吸盤台50a、50b旋轉之電動機54的2以上的保持手段5a、5b、保持手段5a、5b被均等間隔地配設且旋轉的轉盤3、及配設於轉盤3上，將吸盤台50a、50b之間予以區隔的區隔部6，且使電動機54突出配設於轉盤3上，故電動機54的熱不會傳達至轉盤3。。又，區隔部6係具有將電動機54收容於內側的凹部60，故在將電動機54收容於區隔部6的凹部60之狀態下，藉由使研磨用水22接觸區隔部6的外側面61，可冷卻區隔部6與電動機54，熱影響不會波及轉盤3。如此，研磨時轉盤3不會熱變形，可將晶圓W加工成所定研磨厚度。 In the polishing apparatus 1 according to the present invention, the holding device 5a and 5b having the motor 54 that rotates the chuck tables 50a and 50b, and the turntable 3 in which the holding means 5a and 5b are disposed and rotated at equal intervals are provided. The electric motor 54 is disposed on the turntable 3, and the electric motor 54 is disposed on the turntable 3 so that the heat of the electric motor 54 is not transmitted to the turntable 3, and is disposed on the turntable 3 and the partition portion 6 that partitions the suction cups 50a and 50b. . Further, since the partition portion 6 has the recess portion 60 in which the motor 54 is housed inside, the polishing water 22 is brought into contact with the outer side surface of the partition portion 6 in a state where the motor 54 is housed in the recess portion 60 of the partition portion 6. 61. The partition 6 and the motor 54 can be cooled, and the heat influence does not affect the turntable 3. Thus, the turntable 3 is not thermally deformed during polishing, and the wafer W can be processed to a predetermined polishing thickness.
研磨裝置1係常為使電動機54從轉盤3突出的配置構造，但是，可從轉盤3的下方側進行電動機54的交換，故與先前同樣地可容易進行電動機的交換作業。 The polishing apparatus 1 is generally configured to protrude the motor 54 from the turntable 3. However, since the electric motor 54 can be exchanged from the lower side of the turntable 3, the electric motor can be easily exchanged in the same manner as before.
在本實施形態中，將1個區隔部6配設於吸盤台50a、50b之間，但是並不限定於該構造，可因應配設於轉盤的吸盤台的數量，變更區隔部6的數量、形狀及配設位置。 In the present embodiment, the one partition portion 6 is disposed between the suction cup tables 50a and 50b. However, the configuration is not limited thereto, and the partition portion 6 may be changed in accordance with the number of the suction cups disposed on the turntable. Quantity, shape and location.
又，在本實施形態1中，成為具備1個研磨手段10的構造，但是並不限定於該構造。例如，具備兩個研磨手段(粗研磨手段及完成研磨手段)亦可，具備研削手段亦可。 Further, in the first embodiment, the structure including one polishing means 10 is provided, but the configuration is not limited thereto. For example, there may be two polishing means (a rough polishing means and a completion polishing means), and a grinding means may be provided.
1‧‧‧研磨裝置 1‧‧‧ grinding device
2‧‧‧裝置基座 2‧‧‧ device base
2a，2b‧‧‧上面 2a, 2b‧‧‧above
3‧‧‧轉盤 3‧‧‧ Turntable
4‧‧‧轉盤護蓋 4‧‧‧ Turntable cover
5a，5b‧‧‧保持手段 5a, 5b‧‧‧ means of keeping
6‧‧‧區隔部 6‧‧‧section
9‧‧‧支柱 9‧‧‧ pillar
10‧‧‧研磨手段 10‧‧‧ grinding means
11‧‧‧主軸 11‧‧‧ Spindle
12‧‧‧主軸殼體 12‧‧‧ spindle housing
13‧‧‧電動機 13‧‧‧Electric motor
14‧‧‧固定機 14‧‧‧Fixed machine
15‧‧‧研磨輪 15‧‧‧ grinding wheel
16‧‧‧研磨砥石 16‧‧‧ grinding diamonds
20‧‧‧研磨用水供給手段 20‧‧‧Brushing water supply means
21‧‧‧研磨用水供給源 21‧‧‧Brushing water supply source
30‧‧‧研磨進給手段 30‧‧‧Drying feed means
31‧‧‧滾珠螺絲 31‧‧‧Ball screws
32‧‧‧電動機 32‧‧‧Electric motor
33‧‧‧導引軌道 33‧‧‧Guided orbit
34‧‧‧升降部 34‧‧‧ Lifting Department
50a，50b‧‧‧吸盤台 50a, 50b‧‧‧ suction cup
51‧‧‧保持面 51‧‧‧ Keep face
54‧‧‧電動機 54‧‧‧Electric motor
P1‧‧‧加工區域 P1‧‧‧Processing area
P2‧‧‧搬出入區域 P2‧‧‧ moving in and out of the area
W‧‧‧晶圓 W‧‧‧ wafer
Claims (1)
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| JP2015-167610 | 2015-08-27 | ||
| JP2015167610A JP6523872B2 (en) | 2015-08-27 | 2015-08-27 | Grinding device |
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| TW201711799A true TW201711799A (en) | 2017-04-01 |
| TWI700149B TWI700149B (en) | 2020-08-01 |
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| TW105122231A TWI700149B (en) | 2015-08-27 | 2016-07-14 | Grinding device |
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| KR (1) | KR102343155B1 (en) |
| CN (1) | CN106475899B (en) |
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| TWI767058B (en) * | 2017-09-21 | 2022-06-11 | 日商迪思科股份有限公司 | Processing device |
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| JP5335448B2 (en) * | 2009-01-19 | 2013-11-06 | 株式会社ディスコ | Processing equipment |
| WO2011024241A1 (en) * | 2009-08-31 | 2011-03-03 | 株式会社エルム | Method and apparatus for repairing optical disc |
| JP5406676B2 (en) * | 2009-11-10 | 2014-02-05 | 株式会社ディスコ | Wafer processing equipment |
| JP5424864B2 (en) * | 2009-12-28 | 2014-02-26 | 株式会社ディスコ | Processing equipment |
| TWM389601U (en) * | 2010-04-01 | 2010-10-01 | Prec Machinery Res & Dev Ct | Motor fixing plate with heat dissipating features |
| TW201323149A (en) * | 2011-10-21 | 2013-06-16 | Strasbaugh | Systems and methods of wafer grinding |
| JP5822647B2 (en) | 2011-10-21 | 2015-11-24 | 株式会社ディスコ | Grinding equipment |
| JP5389889B2 (en) * | 2011-10-31 | 2014-01-15 | コマツＮｔｃ株式会社 | Machine tool cooling system |
| CN202592201U (en) * | 2012-05-17 | 2012-12-12 | 特新电子机械设备（东莞）有限公司 | Dual-disk type grinding machine |
| JP5930192B2 (en) * | 2012-06-11 | 2016-06-08 | 株式会社ディスコ | Grinding equipment |
| TWI526274B (en) * | 2013-11-28 | 2016-03-21 | Rotating table device | |
| JP6244206B2 (en) * | 2014-01-14 | 2017-12-06 | 株式会社ディスコ | Grinding equipment |
-
2015
- 2015-08-27 JP JP2015167610A patent/JP6523872B2/en active Active
-
2016
- 2016-07-14 TW TW105122231A patent/TWI700149B/en active
- 2016-08-16 KR KR1020160103469A patent/KR102343155B1/en active IP Right Grant
- 2016-08-25 CN CN201610729978.0A patent/CN106475899B/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI767058B (en) * | 2017-09-21 | 2022-06-11 | 日商迪思科股份有限公司 | Processing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2017042875A (en) | 2017-03-02 |
| KR20170026137A (en) | 2017-03-08 |
| CN106475899A (en) | 2017-03-08 |
| CN106475899B (en) | 2020-11-24 |
| TWI700149B (en) | 2020-08-01 |
| KR102343155B1 (en) | 2021-12-23 |
| JP6523872B2 (en) | 2019-06-05 |
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