TWI694168B - 用於將製程氣體混合物供給至ｃｖｄ或ｐｖｄ塗佈裝置之裝置及方法 - Google Patents

用於將製程氣體混合物供給至ｃｖｄ或ｐｖｄ塗佈裝置之裝置及方法 Download PDF

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Publication number
TWI694168B
TWI694168B TW104114708A TW104114708A TWI694168B TW I694168 B TWI694168 B TW I694168B TW 104114708 A TW104114708 A TW 104114708A TW 104114708 A TW104114708 A TW 104114708A TW I694168 B TWI694168 B TW I694168B
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TW
Taiwan
Prior art keywords
gas
mixing chamber
flow
mixing
chamber
Prior art date
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TW104114708A
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English (en)
Chinese (zh)
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TW201602398A (zh
Inventor
巴斯卡爾 帕加達拉 戈琵
愛德華多 奧斯曼 舒凡 皮內羅
馬庫斯 葛斯多夫
馬庫斯 賈科柏
斯特芬 諾依曼
Original Assignee
德商愛思強歐洲公司
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Publication of TW201602398A publication Critical patent/TW201602398A/zh
Application granted granted Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
    • B01F23/10—Mixing gases with gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/40—Static mixers
    • B01F25/42—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions
    • B01F25/421—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions by moving the components in a convoluted or labyrinthine path
    • B01F25/423—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions by moving the components in a convoluted or labyrinthine path by means of elements placed in the receptacle for moving or guiding the components
    • B01F25/4231—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions by moving the components in a convoluted or labyrinthine path by means of elements placed in the receptacle for moving or guiding the components using baffles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
    • B01F25/40—Static mixers
    • B01F25/42—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions
    • B01F25/43—Mixing tubes, e.g. wherein the material is moved in a radial or partly reversed direction
    • B01F25/431—Straight mixing tubes with baffles or obstructions that do not cause substantial pressure drop; Baffles therefor
    • B01F25/4314—Straight mixing tubes with baffles or obstructions that do not cause substantial pressure drop; Baffles therefor with helical baffles
    • B01F25/43141—Straight mixing tubes with baffles or obstructions that do not cause substantial pressure drop; Baffles therefor with helical baffles composed of consecutive sections of helical formed elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/50—Mixing receptacles
    • B01F35/52—Receptacles with two or more compartments
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/71—Feed mechanisms
    • B01F35/712—Feed mechanisms for feeding fluids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
    • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
    • B01F35/71—Feed mechanisms
    • B01F35/716—Feed mechanisms characterised by the relative arrangement of the containers for feeding or mixing the components
    • B01F35/7163—Feed mechanisms characterised by the relative arrangement of the containers for feeding or mixing the components the containers being connected in a mouth-to-mouth, end-to-end disposition, i.e. the openings are juxtaposed before contacting the contents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Physical Vapour Deposition (AREA)
TW104114708A 2014-05-09 2015-05-08 用於將製程氣體混合物供給至ｃｖｄ或ｐｖｄ塗佈裝置之裝置及方法 TWI694168B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014106523.9 2014-05-09
DE102014106523.9A DE102014106523A1 (de) 2014-05-09 2014-05-09 Vorrichtung und Verfahren zum Versorgen einer CVD- oder PVD-Beschichtungseinrichtung mit einem Prozessgasgemisch

Publications (2)

Publication Number Publication Date
TW201602398A TW201602398A (zh) 2016-01-16
TWI694168B true TWI694168B (zh) 2020-05-21

Family

ID=53199950

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104114708A TWI694168B (zh) 2014-05-09 2015-05-08 用於將製程氣體混合物供給至ｃｖｄ或ｐｖｄ塗佈裝置之裝置及方法

Country Status (6)

Country Link
JP (1) JP6796491B2 (ko)
KR (1) KR102413577B1 (ko)
CN (1) CN106457168A (ko)
DE (1) DE102014106523A1 (ko)
TW (1) TWI694168B (ko)
WO (1) WO2015169882A1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11772058B2 (en) 2019-10-18 2023-10-03 Taiwan Semiconductor Manufacturing Company Limited Gas mixing system for semiconductor fabrication

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JP2020020532A (ja) * 2018-08-01 2020-02-06 三菱電機株式会社 温度均一化装置、構造物およびパラボラアンテナ装置
CN110237734A (zh) * 2019-06-10 2019-09-17 中国石油大学(北京) 气体混合器及废气处理装置
DE102019129176A1 (de) * 2019-10-29 2021-04-29 Apeva Se Verfahren und Vorrichtung zum Abscheiden organischer Schichten
CN110773061B (zh) * 2019-11-05 2021-09-21 浙江工业职业技术学院 一种搅拌装置
CN110917914B (zh) * 2019-12-19 2022-09-16 北京北方华创微电子装备有限公司 气体混合装置及半导体加工设备
DE102020112568A1 (de) 2020-02-14 2021-08-19 AIXTRON Ltd. Gaseinlassorgan für einen CVD-Reaktor
CN111744340A (zh) * 2020-07-02 2020-10-09 天津市英格环保科技有限公司 一种在低温环境下脱硫脱硝的方法
CN111804453B (zh) * 2020-07-21 2021-10-12 宁波诺歌休闲用品有限公司 一种用于铝合金型材的表面喷涂机中的喷涂机构
CN112973483A (zh) * 2021-03-29 2021-06-18 深圳市科曼医疗设备有限公司 一种气体混合装置
CN113430502B (zh) * 2021-06-18 2022-07-22 北京北方华创微电子装备有限公司 半导体工艺设备及其混合进气装置
CN113813858B (zh) * 2021-11-10 2023-01-31 西安国际医学中心有限公司 一种治疗癌症疼痛膏药制作的混料装置
CN114768578B (zh) * 2022-05-20 2023-08-18 北京北方华创微电子装备有限公司 混气装置及半导体工艺设备

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TWI319783B (en) * 2004-08-02 2010-01-21 Multi-gas distribution injector for chemical vapor deposition reactors
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11772058B2 (en) 2019-10-18 2023-10-03 Taiwan Semiconductor Manufacturing Company Limited Gas mixing system for semiconductor fabrication

Also Published As

Publication number Publication date
KR20170003965A (ko) 2017-01-10
TW201602398A (zh) 2016-01-16
KR102413577B1 (ko) 2022-06-24
JP2017522447A (ja) 2017-08-10
CN106457168A (zh) 2017-02-22
WO2015169882A1 (de) 2015-11-12
JP6796491B2 (ja) 2020-12-09
DE102014106523A1 (de) 2015-11-12

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