Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45512—Premixing before introduction in the reaction chamber
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
  • B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
  • B01F23/10—Mixing gases with gases
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
  • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
  • B01F25/40—Static mixers
  • B01F25/42—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions
  • B01F25/421—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions by moving the components in a convoluted or labyrinthine path
  • B01F25/423—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions by moving the components in a convoluted or labyrinthine path by means of elements placed in the receptacle for moving or guiding the components
  • B01F25/4231—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions by moving the components in a convoluted or labyrinthine path by means of elements placed in the receptacle for moving or guiding the components using baffles
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
  • B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
  • B01F25/40—Static mixers
  • B01F25/42—Static mixers in which the mixing is affected by moving the components jointly in changing directions, e.g. in tubes provided with baffles or obstructions
  • B01F25/43—Mixing tubes, e.g. wherein the material is moved in a radial or partly reversed direction
  • B01F25/431—Straight mixing tubes with baffles or obstructions that do not cause substantial pressure drop; Baffles therefor
  • B01F25/4314—Straight mixing tubes with baffles or obstructions that do not cause substantial pressure drop; Baffles therefor with helical baffles
  • B01F25/43141—Straight mixing tubes with baffles or obstructions that do not cause substantial pressure drop; Baffles therefor with helical baffles composed of consecutive sections of helical formed elements
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
  • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
  • B01F35/50—Mixing receptacles
  • B01F35/52—Receptacles with two or more compartments
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
  • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
  • B01F35/71—Feed mechanisms
  • B01F35/712—Feed mechanisms for feeding fluids
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
  • B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
  • B01F35/71—Feed mechanisms
  • B01F35/716—Feed mechanisms characterised by the relative arrangement of the containers for feeding or mixing the components
  • B01F35/7163—Feed mechanisms characterised by the relative arrangement of the containers for feeding or mixing the components the containers being connected in a mouth-to-mouth, end-to-end disposition, i.e. the openings are juxtaposed before contacting the contents
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/228—Gas flow assisted PVD deposition

Definitions

• the invention relates to a gas supply device with inlet channels for feeding each provided by a gas source individual gas streams in a first mixing chamber, wherein in the first mixing chamber, in particular by means of one or more first Gasumlenkiano a single or multiple deflection of the single gas flows and mixing the individual gas flows takes place with an overflow barrier over which one of the first
• Gas stream flows into a second mixing chamber in which takes place, in particular by means of second Gasumlenketti a single or multiple deflection of the first gas stream, and with a gas outlet channel for exit of the gas stream from the second mixing chamber into a gas inlet member of a CVD or PVD coating device.
• the invention further relates to a method for supplying a gas inlet member of a CVD or PVD coating device with process gases, comprising the following steps:
• Gas mixing devices serve the mixing together of different gases, which are each introduced by means of an inlet channel, for example in the form of a tube in a premixing chamber, where a first
• the mixing devices in question here are in CVD or
• PVD devices used. Such devices have a reactor housing, a gas inlet member disposed therein, which may in particular have the form of a shower head and a susceptor on which a
• the susceptor can be heated or cooled, depending on whether a thermally excited chemical reaction is to take place on the substrate surface or whether only a condensation should take place on the substrate surface.
• a gas mixture is introduced into the process chamber arranged above the substrate.
• the gas mixing device is used for mixing together the gas mixture, which consists of a plurality of individual gases.
• US Pat. No. 7,540,305 B2 shows a CVD process chamber with a gas inlet element designed as a showerhead into which different process gases can be fed. Upstream of the showerhead is a gas mixing device.
• DE 10 2013 113 817 describes a gas mixing device in the form of a flat-cylindrical housing.
• the housing contains two mixing chambers.
• process gases which are different from one another are fed into the radially outer premixing chamber by starter-shaped inlet channels.
• the premixing chamber contains first gas deflection elements which divert the individual gas streams fed into the premixing chamber. The individual gas streams are doing in one
• EP 1 252 363 B1 describes a CVD reactor with a gas inlet arrangement above a gas inlet element, directly above the process chamber ceiling arranged gas mixing system.
• No. 6,758,591 B1 describes a gas mixing device with a first mixing chamber arranged in the center, which is fed by a plurality of star-shaped gas inlet channels.
• the injected gas streams swirl in the central mixing chamber and pass out of the first mixing chamber through a swirl grating in the axial direction in order to flow radially outward, the gas flow being deflected by about 90 degrees.
• the gas stream premixed in the central first mixing chamber flows through the second, which is arranged radially outside the central first mixing chamber Mixing chamber to emerge from star-shaped outlet channels in Gaseinlassorgane.
• No. 6,495,233 B1 describes a CVD reactor with a showerhead and a mixing device arranged above the showerhead for mixing process gases.
• the process gas provided in a plasma generator flows in mutually parallel inlet channels into a vortex chamber, where turbulence takes place.
• EP 1 452 626 B1 describes a gas mixing device for mixing two gases entering into a first mixing chamber through separate gas inlet channels.
• the first mixing chamber is separated from a partition by a diffusion chamber.
• the two process gases premixed in the first mixing chamber and flowing through the inlet channels pass through an opening in the dividing wall into the diffusion chamber, where further mixing of the process gases takes place.
• US 6,068,703 describes a gas mixing device for mixing a plurality of process gases which enter a mixing chamber through gas inlet passages extending in the radial direction with respect to a center.
• the mixing chamber has indwelling chambers arranged annularly around the center, through which the process gases have to flow meandering in order to mix.
• a total gas stream emerges from a center
• US 2011/0223334 A1 describes a CVD reactor with a reactor lid, on which the sources and a mixing chamber are arranged.
• the mixing chamber is in the center and is fed by gas inlet passages extending radially to the center.
• the mixing of the individual gas flows takes place in a mixing chamber.
• WO 97/35107 shows tube-section gas deflection elements. From the wall of a circular cylindrical tube cut free, curved baffles in the flow channel of the tube.
• the invention has for its object to technologically improve a gas supply device or a method for supplying a gas inlet member with process gases.
• the object is achieved by the invention specified in the claims.
• the fiction, contemporary device is designed so that the effective path lengths of the individual gas streams from the gas sources to Gaseinlass- organ are equal to each other. If the effective path lengths of the individual gas flows are equal to one another, the gases which differ from one another have the same residence time in the gas supply device. The same residence time can be kept the same for inlet channels with different diameters or differently shaped sections of the mixing chamber by different pressure conditions Liehe. But it is also possible to compensate for different diameters through different cable lengths. Preferred are symmetrical configurations in which the inlet channels or the associated sections of the mixing chamber are designed to be identical.
• the effective path lengths are thus understood as meaning, in particular, those flow paths along which the individual gas flows flow through the first mixing chamber at identical times. Possible geometric differences of the individual flow channels can be compensated by different pressure conditions. In a symmetrical design of the inlet channels, in which all inlet channels have a same cross-section and in a same geometric environment in the mixing chamber the effective path lengths are the geometric distances of the flow paths of each individual gas stream from the mouth of the respective inlet channel into the mixing chamber to the beginning of the gas outlet channel.
• the individual gas streams are preferably in each case a laminar flow, so that the path lengths are essentially determined by the flow lines.
• the first gas deflecting elements arranged in the first mixing chamber can be arranged such that they essentially have flow path lengthening properties.
• the arrangement of the first Gasumlenkiano within the first mixing chamber is preferably symmetrical with respect to a star-shaped arrangement of the gas inlet channels, so that the individual individual gas streams flow at least along equivalent flow paths.
• the first gas deflection elements can be arranged such that the individual gas flows flow in a helical manner through a ring-cylindrical first mixing chamber.
• the individual gas streams in this case have a component of movement which is directed transversely to the plane of extent of the inlet plane.
• the individual gas streams in this case have a component of movement which is directed transversely to the extension planes of the inlet plane. But they also have a component of motion in the plane spanning the plane of extension. In these directions, a circular movement or vortex movement preferably forms.
• the individual gas streams flow through the first mixing chamber along a helical line, for example from bottom to top along the imaginary axis of the mixing chamber.
• Within the first mixing chamber may be a second mixing chamber.
• the two mixing chambers can be formed by concentrically arranged tubes.
• the first mixing chamber then forms a peripheral mixing chamber and the second
• the Mixing chamber a central mixing chamber.
• the individual gas streams combine within the first mixing chamber to form a premixed first gas stream which passes over an overflow barrier.
• the overflow barrier can the End edge of an inner tube, which forms the inner wall of the first mixing chamber and the outer wall of the second mixing chamber.
• second gas deflection elements are preferably provided with which the gas flow which has entered the second mixing chamber via the overflow barrier is deflected one or more times.
• the second Gasumlenk sculpture can be designed and arranged such that forms a turbulence. While the first Gasumlenkmaschine are preferably designed and arranged so that they deflect a laminar gas flow one or more times, the second Gasumlenkmaschine are arranged in a turbulence-generating manner.
• the gas stream flowing through the second mixing chamber exits the second mixing chamber through a gas outlet channel, wherein the outlet direction of the gas is preferably directed transversely to the feed direction of the gases.
• the gas outlet channel thus preferably has an extension direction, which is directed transversely to the plane of extent of the gas inlet plane.
• the walls of the two mixing chambers can be circular cylindrical and be formed by concentric tubes.
• the imaginary axis of the tubes extends transversely to the gas inlet level. In the two tubes, oppositely directed gas flows are formed.
• the gas sources can be evaporation sources. These include solid or liquid starting materials which are formed by adding heat of vaporization in the gaseous form.
• this vaporized starting material is transported through an inlet channel to the first mixing chamber.
• the individual gas flows from the feed channels with mutually equal average flow rate in the first mixing chamber.
• the flow rate of the individual gas streams can be adjusted by means of mass flow controllers.
• the gas sources are aerosol evaporators. Again, liquid or solid starting materials are brought into the gaseous form by adding heat of vaporization.
• the mass The flow of steam can be controlled on the one hand via the temperature of evaporation surfaces, on the other hand, but also by the carrier gas flow.
• the residence times of the individual gases within the gas mixing device are substantially equal. They should differ from each other by a maximum of 10 milliseconds.
• the residence time of the gases within the gas mixing device is not greater than 100 milliseconds.
• the first mixing chamber can also have flow obstacles with which a turbulent flow is generated.
• the second mixing chamber may also have flow obstacles. But it can also have flow guide to form a laminar flow.
• FIG. 1 shows schematically the cross section of a CVD or PVD reactor with associated gas mixing device
• FIG. 2 shows the section according to the line II-II in FIG. 1,
• FIG. 3 is a view of a second embodiment of a gas mixing device
• FIG. 4 is a plan view of the gas mixing device according to Figure 3
• FIG. 5 is a perspective view of a third embodiment, wherein the gas mixing device is formed by a U-shaped tube, 6 is a side view of the mixing device shown in Figure 5,
• FIG. 7 is a plan view of the mixing device shown in FIG. 5
• FIG. 8 is a perspective view of a fourth embodiment of a mixing device
• FIG. 9 shows the top view of the gas mixing device shown in FIG. 8
• FIG. 10 shows the section according to the line X - X in FIG. 9, FIG.
• Fig. 12 shows a fifth embodiment of a gas mixing device of
• FIG. 13 shows a side view of the gas mixing device shown in FIG. 12,
• FIG. 14 shows the section according to the line XIV-XIV in FIG. 13,
• FIGS. 1 and 2 show a first embodiment of the invention.
• a gas-tight reactor housing 1 which can be evacuated in its interior, contains a gas inlet element 5 with an internal gas distribution volume 7 and a gas outlet. tread plate having a plurality of shower head arranged gas outlet openings 6, which point in the direction of a process chamber 2, on the bottom of a substrate to be coated 4 is located.
• the substrate 4 is located on a heatable by a heater to a process temperature or cooled by a cooling device to process temperature susceptor 3.
• the susceptor 3 is surrounded by an annular Gasauslassorgan 9, which is connected to a vacuum pump 10, with the total pressure within the process chamber 2 and the reactor housing 1 can be adjusted.
• the feeding of the gas inlet member 5 with process gases is performed by a
• Gas outlet channel 8 which leads through the ceiling of the reactor housing 1 into the interior.
• the gas outlet channel 8 is connected to the bottom 20 of a housing of a gas mixing device, which may be located immediately above the upper wall of the reactor housing 1.
• the gas mixing device may be firmly connected to the upper wall of the reactor housing 1.
• the upper wall may be a carrier of the gas mixing device.
• the gas mixing device has a circular cylindrical housing, wherein the bottom 20 and the bottom 20 opposite ceiling 17 each one
• the housing of the gas mixing device has a cylindrical outer wall 18 which is formed by a first tube.
• a second tube 19 is located inside and is connected at its lower end fixed to the bottom 20.
• the cavity of the inner tube 19 is connected to the gas outlet channel 8.
• the upper edge of the inner tube 19 projects freely into the cavity of the outer tube 18 and forms an overflowable
• the bottom 20 adjacent star-shaped inlet channels 22 may be different from each other process gases at different from each other Circumferential positions are fed into the gas mixing device.
• four inlet channels 22 arranged in a uniform angular distribution are provided which are each connected to a gas source 21.
• the gas sources 21 are evaporators in which solid or liquid starting materials are vaporized by application of heat. The thus formed vapor is fed into the gas mixing device through the inlet channel 22 by means of a carrier gas fed into a feed channel 23.
• the gas mixing device has a first mixing chamber 12 which is bounded outwardly from the outer tube 18 and which is bounded inwardly by the inner tube 19.
• This first mixing chamber 12 are a plurality of superposed Gasumlenkiata 13.
• the Gasumlenkiata 13 are arranged so as to give the entering into the first mixing chamber 12 from the feed channels 22 individual gas flows a substantially helical gear, preferably laminar flow.
• the first Gasumlenkiata 13 are arranged symmetrically with respect to the symmetry of the arrangement of the inlet channels 22, so that the emerging from the inlet channels 22 and passing through the first mixing chamber 12 individual gas streams each have a similar flow pattern. These are worm-shaped flow lines along which the gases from the bottom 20 into
• the premixed gas stream is deflected in the region of the overflow barrier 14 by 180 degrees and then flows from the ceiling 17 in the direction of the bottom 20 through a second mixing chamber 15, which is formed by the inner tube 19.
• second Gasumlenketti 16 which are formed and arranged so that they generate vortices.
• the Gasumlenketti 16 may have gas separation edges, behind which can develop a turbulent flow.
• the Gasumlenkium 16 may be flow obstacles.
• a turbulence of the first gas flow takes place in the second mixing chamber 15.
• the thus formed second turbulent gas flow which includes the gases of all individual gas streams, exits the gas outlet channel 8 from the bottom 20 of the second mixing chamber 15 and enters the gas distribution volume 7 of the gas inlet member 5.
• the carrier gas is so in the gas wells 21 and in the Inlet channels 22 fed that the mean over the cross section of the mouth of the inlet channels 22 in the first mixing chamber 12 averaged gas velocity is the same. From each inlet channel 22, gas thus flows into the mixing chamber 12 at the same mean flow rate.
• a total of eight inlet channels 22 are arranged in a common gas inlet plane and run in a star shape in the direction of the center of the gas mixing device.
• a radially outer first mixing chamber 12 has a Gasumlenkelement 13, with which a helical extending first
• Mixing chamber 12 is formed.
• the end of the first mixing chamber 12 is formed by an overflow edge 14, to which a cylindrical second, internal mixing chamber 15 connects.
• FIGS. 3 and 4 show inlet channels 22 with different cross-sectional areas.
• the inlet channels 22 with the larger cross-sectional areas are preferably process gases or carrier gases, with which a process gas transported, passed through.
• the inlet channels 22 'with a smaller cross-sectional area only diluent gases, ie carrier gases, are preferably passed through.
• the additional inlet channels 22 ', through which no process gases are introduced, may be used to create turbulence in the mixing chamber.
• the housing of the mixing device is U-shaped.
• a first U-leg of the housing which forms a tubular first mixing chamber 12, open in a first plane arranged first inlet channels 22 and arranged in a second plane parallel thereto extending second inlet channels 22 '.
• These are semicircular projections which protrude with a straight free peripheral edge to the middle of the first mixing chamber 12 forming tube.
• the U-web of the U-shaped tube 12, 15 forms an overflow barrier 14. There also protrudes a semicircular Gasumlenkelement 24 in the free cross section of the U-shaped tube, which has a free edge, which passes through the center of the tube.
• the Gasumlenk sculpture 13, 15, 24 are formed by flat, over half a circumferential length connected to the inner wall of the tube plates. The plates extend transversely to the flow direction.
• FIGS 8 to 11 show a fourth embodiment of a mixing device having eight feed channels 22, which are arranged in a common feed-level. Transverse to the feed plane extends a cylindrical housing. It has an outer cylinder 18 and an inner cylinder 19. The inner cylinder 19 forms an overflow barrier 14 with a free peripheral edge.
• the gas inlet channels 22 open in the axial vicinity of the base 20 into the first mixing chamber 12 which is outwardly bounded by the outer tube 18 and which only In the upper region, ie adjacent to the overflow edge 14 Gasumlenkiana 13 has. These Gasumlenketti 13 direct the flowing in the axial direction of the first mixing chamber 12 individual gas flows on a helical flow path on which the individual gas flows reach the space below the ceiling 17 where they are deflected 180 degrees over the overflow barrier 14 passing.
• the inner, second mixing chamber 15 has a multiplicity of gas deflecting elements 16 arranged one behind the other in the flow direction. These are curved flat parts which effect a multi-stage gas deflection. The flat parts are attached to the inner wall of the inner tube 19 and lead to a turbulence of passing through the inner mixing chamber 15 passing gas stream, which the second mixing chamber 15 through a
• Gas outlet channel 8 leaves in the axial direction of the cylinder assembly.
• the Gasumlenketti 16 are identical to each other. It may be essay parts that support each other, so put on each other. she are designed so that they can be supported on the inner walls of the tube 19.
• inlet ducts 22 with a large diameter, process gases or carrier gases conveying process gases are passed through, whereas only a carrier gas, ie a diluent gas, is passed through the supplementary inlet ducts 22 'with a small cross section.
• the fifth exemplary embodiment illustrated in FIGS. 12 to 17 has a total of eight inlet channels 22 arranged in a star-shaped manner in an inlet plane.
• the inlet channels 22 are of identical construction and have an inner diameter which increases stepwise in the flow direction.
• the inlet channels 22 are also connected via transverse channels 25 each with the adjacent inlet channel 22.
• first tubes 18, 19 arranged coaxially with one another form an outer first mixing chamber 12 and an inner second mixing chamber 15, the outer, first mixing chamber 12 being fed at the bottom through the inlet channels 22 with the gases to be mixed.
• first Gasumlenkiana 13 are provided, which deflect the gas flow in the circumferential direction.
• the gas flow can be deflected by the deflecting elements 13 several times in different circumferential directions, so that it flows in a first height section of the first mixing chamber 12, for example in a clockwise direction through the first mixing chamber 12 and flows through the first mixing chamber 12 in an adjoining height section in the counterclockwise direction.
• the flow movement in a clockwise or counterclockwise direction is superimposed on a flow component in the axial direction of the cylinder tubes, so that the individual gas flows emerging from the inlet channels 22 within the first mixing chamber 12 are the upper one Reach section of the first mixing chamber 12, where they flow 180 degrees over two opposing overflow barriers 14 into the central second mixing chamber 15.
• the central second mixing chamber 15 are again made of flat materials, which may have a curved structure, formed second Gasumlenk sculpture 16, which lead to a turbulence of the second mixing chamber 15 by flowing gas.
• the Gasumlenketti 13, 16 are designed and arranged so that even taking into account the length of the inlet channels 22 each individual gas flow from its source 21 to the gas inlet member 5 flows through substantially the same effective path length.
• a carrier gas flow is fed in each case.
• the carrier gas flow is so dimensioned that the gases within the mixing arrangement thus have the same residence time on their way from the gas source 21 to the gas inlet member 5.
• the individual residence times should not differ more than 10 milliseconds, the total residence time preferably being at most 100 milliseconds.
• the gas flows through the inlet channels 22 are preferably adjusted within the tolerances so that the gases enter the mixing chamber at the same average flow rate and flow through the mixing chambers or the entire gas mixing device in the same time. It is optimal if the dwell times differ by less than 10 milliseconds, for example a maximum of only 2 or 5 milliseconds.
• the gas mixture can take place at atmospheric pressure. However, the gas mixture is preferably carried out in a pressure range between 1 mbar and 500 mbar.
• the pressure difference between source 21 and gas inlet member 5 is less than 1 mbar, preferably less than 0.2 mbar.
• the diameter and the height of the gas mixing device are in the range between 200 and 700 mm.
• a gas supply device which is characterized in that the inlet channels 22 are arranged in an inlet plane and in particular directed to a common center, and / or that the gas outlet channel 8 extends in a direction transverse to the inlet plane and / or that the Gas flow through the overflow barrier 14 undergoes a 180 ° deflection.
• a gas supply device which is characterized in that the first mixing chamber 12 is a premixing chamber with preferably a laminar change in direction of the respective individual gas flow generating first Gasumlenk instituten 13 and / or that the second mixing chamber 15 is a Verwirbe- ment chamber, with second Gasumlenkettin 16 for generating a second turbulent gas flow in the second mixing chamber 15th
• a gas supply device which is characterized in that the first or second Gasumlenkiana 12, 13 are arranged in multiple stages in the flow direction one behind the other.
• a gas supply device which is characterized in that the first and second mixing chamber 12, 15 of concentric tubes 18, 19 are formed, which are flowed through in the opposite direction.
• a gas supply device which is characterized in that the diameter of the first or second mixing chamber 12, 15 is smaller than the axial height of the first or second mixing chamber 12, 15th
• a gas supply device which is characterized in that a gas supply device consisting of the two mixing chambers 12, 15 and the gas sources 21 is arranged vertically above a process chamber 2, in particular directly on an upper wall of the reactor housing 1.
• a method which is characterized in that the first gas deflecting elements 13 arranged in the first mixing chamber 12 redirect the individual gas streams in particular laminarly and / or that the second gas deflecting elements 16 arranged in the second mixing chamber 15 generate a particularly turbulent second gas stream.

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• Chemical & Material Sciences (AREA)
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• Engineering & Computer Science (AREA)
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• Organic Chemistry (AREA)
• General Chemical & Material Sciences (AREA)
• Dispersion Chemistry (AREA)
• Chemical Vapour Deposition (AREA)
• Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
• Physical Vapour Deposition (AREA)

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• 2014
  • 2014-05-09 DE DE102014106523.9A patent/DE102014106523A1/de active Pending
• 2015
  • 2015-05-07 CN CN201580027176.9A patent/CN106457168A/zh active Pending
  • 2015-05-07 KR KR1020167034147A patent/KR102413577B1/ko active IP Right Grant
  • 2015-05-07 JP JP2016565413A patent/JP6796491B2/ja active Active
  • 2015-05-07 WO PCT/EP2015/060017 patent/WO2015169882A1/de active Application Filing
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