JP2016519845A - 高対称四重ガス注入によるプラズマリアクタ - Google Patents
高対称四重ガス注入によるプラズマリアクタ Download PDFInfo
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- 238000002347 injection Methods 0.000 title claims description 50
- 239000007924 injection Substances 0.000 title claims description 50
- 238000009826 distribution Methods 0.000 claims abstract description 59
- 230000007704 transition Effects 0.000 claims description 34
- 239000007789 gas Substances 0.000 description 280
- 238000000034 method Methods 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 4
- 238000004886 process control Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- Chemical & Material Sciences (AREA)
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- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
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Abstract
Description
本開示は、ワークピース(例えば、半導体ウェハ)の処理に用いられるプラズマリアクタ用のガス注入システムに関する。
プラズマリアクタのチャンバ内での処理ガス分布の制御は、プラズマ処理中にワークピース上のエッチング速度分布又は堆積速度分布のプロセス制御に影響を与える。チャンバの天井に取り付けられた調整可能なガス注入ノズルは、異なるゾーン(例えば、中央ゾーンと側部ゾーン)に向けられた異なる注入スリットを有することができる。別々のガス入力は、異なる注入スリットに供給することができ、別々の流量制御は、各ガス入力に対して提供することができる。各ガス入力は、異なるガス流路を通って、対応する注入スリットの異なる部分に供給することができる。特定のガス入力からの異なるガス流路は、均一性のために、等しい長さであることが望ましい。しかしながら、ガス入力からノズルまでの経路長をすべての入力とノズルに対して等しくすることは、可能とは思われておらず、ガス分布の不均一性につながる。
Claims (15)
- プラズマリアクタ用の環状蓋板であって、
第1及び第2の複数のガス出口であって、前記第1及び第2の複数のガス出口の各々の中のガス出口は、第1円弧長さだけ離間されている第1及び第2の複数のガス出口と、
第1及び第2のガス供給通路を含むガス送出ブロックと、
それぞれ上位及び下位にある第1及び第2の複数のガス分配チャネルであって、前記第1及び第2の複数のガス分配チャネルの各々は、
対応する一対の前記ガス出口に接続された一対の端部を有する円弧状のガス送出チャネルと、
前記第1及び第2のガス供給通路の対応するものに接続された入力端と、前記円弧状のガス送出チャネルの中央ゾーンに結合された出力端とを含む円弧状のガス供給チャネルとを含む第1及び第2の複数のガス分配チャネルとを含む環状蓋板。 - 前記ガス送出ブロックは、前記第1及び第2の複数のガス分散チャネルのうちのガス供給チャネルが等しい長さとなるように、ガス供給チャネルの各々の出力端から第2円弧長さだけオフセットした位置に配置される請求項1記載の環状蓋板。
- 前記第1及び第2の複数のガス出口のうちのガス出口は、前記環状蓋板の円周に対して分布され、前記第1の複数のガス出口は、前記円周に沿って前記第2の複数のガス出口と交互になっている請求項1記載の環状蓋板。
- 前記第1の複数のガス出口は、第1対のガス出口を含み、前記第1円弧長さは半円に対応し、前記第2の複数のガス出口は、前記第1対のガス出口から4分の1円だけオフセットされた第2対のガス出口を含む請求項1記載の環状蓋板。
- 前記ガス送出ブロックは、4分の1円の円弧長さだけガス供給チャネルの各々の出口端からオフセットされた位置に配置される請求項4記載の環状蓋板。
- 前記第1及び第2の複数のガス分配チャネルの各々は、前記ガス供給チャネルの前記出口端と前記ガス送出チャネルの前記中央ゾーンの間に接続されたフロー遷移要素を更に含む請求項1記載の環状蓋板。
- 前記フロー遷移要素は、
前記ガス供給チャネルに対して軸方向にずれた半径方向遷移コンジットと、
前記ガス供給チャネルの前記出力端と前記半径方向遷移コンジットの一端の間に結合された軸方向入力コンジットと、
前記ガス供給チャネルの前記中央ゾーンと前記半径方向遷移コンジットの他端の間に接続された軸方向出力コンジットとを含む請求項6記載の環状蓋板。 - 前記軸方向入力コンジットは、前記ガス供給チャネルの前記出力端内の開口部に合い、前記軸方向出力コンジットは、前記ガス供給チャネルの前記中央ゾーン内の開口部に合う請求項7記載の環状蓋板。
- プラズマリアクタチャンバ用のガス送出システムであって、
それぞれ内側及び外側ガス注入通路を含むガスノズルと、
前記ガスノズルの周囲に中央開口部を画定する環状蓋板であって、
前記内側及び外側ガス注入通路のそれぞれに結合された第1及び第2の複数のガス出口であって、前記第1及び第2の複数のガス出口の各々の中のガス出口は、第1円弧長さだけ離間されている第1及び第2の複数のガス出口と、
第1及び第2のガス供給通路を含むガス送出ブロックと、
それぞれ上位及び下位にある第1及び第2の複数のガス分配チャネルであって、前記第1及び第2の複数のガス分配チャネルの各々は、
対応する一対の前記ガス出口に接続された一対の端部を有する円弧状のガス送出チャネルと、
前記第1及び第2のガス供給通路の対応するものに接続された入力端と、前記円弧状のガス送出チャネルの中央ゾーンに結合された出力端とを含む円弧状のガス供給チャネルとを含む第1及び第2の複数のガス分配チャネルとを含む環状蓋板とを含むガス送出システム。 - 前記ガス送出ブロックは、前記第1及び第2の複数のガス分散チャネルのうちのガス供給チャネルが等しい長さとなるように、ガス供給チャネルの各々の出力端から第2円弧長さだけオフセットした位置に配置される請求項9記載のガス送出システム。
- 前記第1及び第2の複数のガス出口のうちのガス出口は、前記環状蓋板の円周に対して分布され、前記第1の複数のガス出口は、前記円周に沿って前記第2の複数のガス出口と交互になっている請求項9記載のガス送出システム。
- 前記第1の複数のガス出口は、第1対のガス出口を含み、前記第1円弧長さは半円に対応し、前記第2の複数のガス出口は、前記第1対のガス出口から4分の1円だけオフセットされた第2対のガス出口を含む請求項9記載のガス送出システム。
- 前記ガス送出ブロックは、4分の1円の円弧長さだけガス供給チャネルの各々の出口端からオフセットされた位置に配置される請求項12記載のガス送出システム。
- 前記第1及び第2の複数のガス分配チャネルの各々は、前記ガス供給チャネルの前記出口端と前記ガス送出チャネルの前記中央ゾーンの間に接続されたフロー遷移要素を更に含む請求項9記載のガス送出システム。
- 前記フロー遷移要素は、
前記ガス供給チャネルに対して軸方向にずれた半径方向遷移コンジットと、
前記ガス供給チャネルの前記出力端と前記半径方向遷移コンジットの一端の間に結合された軸方向入力コンジットと、
前記ガス供給チャネルの前記中央ゾーンと前記半径方向遷移コンジットの他端の間に接続された軸方向出力コンジットとを含む請求項14記載のガス送出システム。
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US201361789485P | 2013-03-15 | 2013-03-15 | |
US61/789,485 | 2013-03-15 | ||
PCT/US2014/014391 WO2014149200A1 (en) | 2013-03-15 | 2014-02-03 | Plasma reactor with highly symmetrical four-fold gas injection |
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