JP2020061563A - 高対称四重ガス注入によるプラズマリアクタ - Google Patents
高対称四重ガス注入によるプラズマリアクタ Download PDFInfo
- Publication number
- JP2020061563A JP2020061563A JP2019226053A JP2019226053A JP2020061563A JP 2020061563 A JP2020061563 A JP 2020061563A JP 2019226053 A JP2019226053 A JP 2019226053A JP 2019226053 A JP2019226053 A JP 2019226053A JP 2020061563 A JP2020061563 A JP 2020061563A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- outlets
- plasma reactor
- gas outlets
- supply ports
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002347 injection Methods 0.000 title claims abstract description 57
- 239000007924 injection Substances 0.000 title claims abstract description 57
- 238000009826 distribution Methods 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 abstract description 5
- 239000000243 solution Substances 0.000 abstract 1
- 230000007704 transition Effects 0.000 description 24
- 230000000630 rising effect Effects 0.000 description 4
- 230000001174 ascending effect Effects 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
本開示は、ワークピース(例えば、半導体ウェハ)の処理に用いられるプラズマリアクタ用のガス注入システムに関する。
プラズマリアクタのチャンバ内での処理ガス分布の制御は、プラズマ処理中にワークピース上のエッチング速度分布又は堆積速度分布のプロセス制御に影響を与える。チャンバの天井に取り付けられた調整可能なガス注入ノズルは、異なるゾーン(例えば、中央ゾーンと側部ゾーン)に向けられた異なる注入スリットを有することができる。別々のガス入力は、異なる注入スリットに供給することができ、別々の流量制御は、各ガス入力に対して提供することができる。各ガス入力は、異なるガス流路を通って、対応する注入スリットの異なる部分に供給することができる。特定のガス入力からの異なるガス流路は、均一性のために、等しい長さであることが望ましい。しかしながら、ガス入力からノズルまでの経路長をすべての入力とノズルに対して等しくすることは、可能とは思われておらず、ガス分布の不均一性につながる。
Claims (8)
- 側壁を有するチャンバと、
チャンバ内で処理するためにワークピースを保持する支持体と、
側壁で支持された環状蓋板であって、環状蓋板は、
第1のガス入口と、
第2のガス入口と、
第1のガス入口に接続された第1の複数のガス出口と、
第2のガス入口に接続された第2の複数のガス出口とを備え、
第1及び第2の複数のガス出口のうちのガス出口は角度的に離間している環状蓋板と、
環状蓋板に支持された環状窓と、
窓の開口部で支持されたガス分配ハブであって、ガス分配ハブは、
第1の複数のガス供給ポートと、
第2の複数のガス供給ポートと、
第1の複数のガス供給ポートに接続された1つ以上の第1のガス注入通路と、
第2の複数のガス供給ポートに接続された1つ以上の第2のガス注入通路とを備え、
第1及び第2の複数のガス供給ポートのうちの供給ポートは角度的に離間しているガス分配ハブと、
複数の半径方向延在コンジットであって、環状窓の上で延び、
第1の複数のガス出口を第1の複数のガス供給ポートに接続させ、
第2の複数のガス出口を第2の複数のガス供給ポートに接続させる半径方向延在コンジットとを備えるプラズマリアクタ。 - 半径方向延在コンジット及び第1及び第2の複数のガス出口のうちのガス出口は、等しい角度間隔で離間している、請求項1に記載のプラズマリアクタ。
- 第1の複数のガス出口のうちのガス出口は、半円の弧長だけ互いにオフセットされ、
第2の複数のガス出口のうちのガス出口は、半円の弧長だけ互いにオフセットされている、請求項1に記載のプラズマリアクタ。 - 第1の複数のガス出口のうちのガス出口は、第2の複数のガス出口のうちのガス出口から1/4円の弧長だけオフセットされている、請求項3に記載のプラズマリアクタ。
- 第1及び第2の複数のガス出口のうちのガス出口は、環状蓋板に沿って交互に配置されている、請求項1に記載のプラズマリアクタ。
- 第1のガス入口と第1の複数のガス出口注入通路内部ガス注入の各々との間、及び第2のガス入口と第2の複数のガス出口の各々との間のガス通路長は等しくなっている、請求項1に記載のプラズマリアクタ。
- 1つ以上の第2のガス注入通路は、1つ以上の第1のガス注入通路の半径方向外側に配置されている、請求項1に記載のプラズマリアクタ。
- 第1の複数のガス供給ポートは、共通の第1のガス注入通路に接続されている、請求項1に記載のプラズマリアクタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361789485P | 2013-03-15 | 2013-03-15 | |
US61/789,485 | 2013-03-15 | ||
JP2018116830A JP6634475B2 (ja) | 2013-03-15 | 2018-06-20 | 高対称四重ガス注入によるプラズマリアクタ |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018116830A Division JP6634475B2 (ja) | 2013-03-15 | 2018-06-20 | 高対称四重ガス注入によるプラズマリアクタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020061563A true JP2020061563A (ja) | 2020-04-16 |
JP6937354B2 JP6937354B2 (ja) | 2021-09-22 |
Family
ID=51580581
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016500195A Active JP6359627B2 (ja) | 2013-03-15 | 2014-02-03 | 高対称四重ガス注入によるプラズマリアクタ |
JP2018116830A Active JP6634475B2 (ja) | 2013-03-15 | 2018-06-20 | 高対称四重ガス注入によるプラズマリアクタ |
JP2019226053A Active JP6937354B2 (ja) | 2013-03-15 | 2019-12-16 | 高対称四重ガス注入によるプラズマリアクタ |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016500195A Active JP6359627B2 (ja) | 2013-03-15 | 2014-02-03 | 高対称四重ガス注入によるプラズマリアクタ |
JP2018116830A Active JP6634475B2 (ja) | 2013-03-15 | 2018-06-20 | 高対称四重ガス注入によるプラズマリアクタ |
Country Status (6)
Country | Link |
---|---|
US (3) | US10163606B2 (ja) |
JP (3) | JP6359627B2 (ja) |
KR (1) | KR102130061B1 (ja) |
CN (2) | CN104782234B (ja) |
TW (3) | TWI617222B (ja) |
WO (1) | WO2014149200A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9536710B2 (en) | 2013-02-25 | 2017-01-03 | Applied Materials, Inc. | Tunable gas delivery assembly with internal diffuser and angular injection |
CN107424901B (zh) | 2013-03-12 | 2019-06-11 | 应用材料公司 | 具有方位角与径向分布控制的多区域气体注入组件 |
KR102130061B1 (ko) * | 2013-03-15 | 2020-07-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 매우 대칭적인 4-폴드 가스 주입부를 갖는 플라즈마 반응기 |
KR102553629B1 (ko) | 2016-06-17 | 2023-07-11 | 삼성전자주식회사 | 플라즈마 처리 장치 |
JP6696322B2 (ja) * | 2016-06-24 | 2020-05-20 | 東京エレクトロン株式会社 | ガス処理装置、ガス処理方法及び記憶媒体 |
US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
US10840066B2 (en) | 2018-06-13 | 2020-11-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Adjustable fastening device for plasma gas injectors |
KR102610827B1 (ko) * | 2018-12-20 | 2023-12-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 개선된 가스 유동을 처리 챔버의 처리 용적에 공급하기 위한 방법 및 장치 |
US20200258718A1 (en) * | 2019-02-07 | 2020-08-13 | Mattson Technology, Inc. | Gas Supply With Angled Injectors In Plasma Processing Apparatus |
CN110223904A (zh) * | 2019-07-19 | 2019-09-10 | 江苏鲁汶仪器有限公司 | 一种具有法拉第屏蔽装置的等离子体处理系统 |
US11856706B2 (en) * | 2019-12-03 | 2023-12-26 | Applied Materials, Inc. | Method and system for improving the operation of semiconductor processing |
US11562909B2 (en) * | 2020-05-22 | 2023-01-24 | Applied Materials, Inc. | Directional selective junction clean with field polymer protections |
KR20220029906A (ko) * | 2020-09-02 | 2022-03-10 | 에스케이하이닉스 주식회사 | 기판의 평탄화 장치 및 방법 |
KR102619579B1 (ko) * | 2021-08-11 | 2023-12-29 | 주식회사 피에스에스 | 배기가스 처리를 위한 플라즈마 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009065153A (ja) * | 2007-09-05 | 2009-03-26 | Applied Materials Inc | プラズマリアクタチャンバにおいてウェハ縁端部でガスを注入するカソードライナ |
US20090311872A1 (en) * | 2008-06-13 | 2009-12-17 | Tokyo Electron Limited | Gas ring, apparatus for processing semiconductor substrate, the apparatus including the gas ring, and method of processing semiconductor substrate by using the apparatus |
CN102138204A (zh) * | 2008-09-03 | 2011-07-27 | 东京毅力科创株式会社 | 气体供给部件以及等离子体处理装置 |
JP2013033816A (ja) * | 2011-08-01 | 2013-02-14 | Tokyo Electron Ltd | プラズマ処理装置 |
Family Cites Families (87)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6236825A (ja) * | 1985-08-12 | 1987-02-17 | Hitachi Ltd | ドライエツチング装置 |
US6024826A (en) | 1996-05-13 | 2000-02-15 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
KR100276736B1 (ko) | 1993-10-20 | 2001-03-02 | 히가시 데쓰로 | 플라즈마 처리장치 |
US5620523A (en) | 1994-04-11 | 1997-04-15 | Canon Sales Co., Inc. | Apparatus for forming film |
US5746875A (en) | 1994-09-16 | 1998-05-05 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
JP3178295B2 (ja) | 1995-03-29 | 2001-06-18 | 株式会社田村電機製作所 | カード移し換え装置 |
JPH0918614A (ja) | 1995-06-29 | 1997-01-17 | Canon Inc | ファクシミリ装置 |
TW283250B (en) | 1995-07-10 | 1996-08-11 | Watkins Johnson Co | Plasma enhanced chemical processing reactor and method |
US6089182A (en) | 1995-08-17 | 2000-07-18 | Tokyo Electron Limited | Plasma processing apparatus |
JPH0982495A (ja) | 1995-09-18 | 1997-03-28 | Toshiba Corp | プラズマ生成装置およびプラズマ生成方法 |
TW356554B (en) | 1995-10-23 | 1999-04-21 | Watkins Johnson Co | Gas injection system for semiconductor processing |
US6200412B1 (en) | 1996-02-16 | 2001-03-13 | Novellus Systems, Inc. | Chemical vapor deposition system including dedicated cleaning gas injection |
US5948704A (en) | 1996-06-05 | 1999-09-07 | Lam Research Corporation | High flow vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and/or cantilevered substrate support |
US6367410B1 (en) | 1996-12-16 | 2002-04-09 | Applied Materials, Inc. | Closed-loop dome thermal control apparatus for a semiconductor wafer processing system |
US6083344A (en) | 1997-05-29 | 2000-07-04 | Applied Materials, Inc. | Multi-zone RF inductively coupled source configuration |
US6051073A (en) | 1998-02-11 | 2000-04-18 | Silicon Genesis Corporation | Perforated shield for plasma immersion ion implantation |
US6129808A (en) | 1998-03-31 | 2000-10-10 | Lam Research Corporation | Low contamination high density plasma etch chambers and methods for making the same |
US6230651B1 (en) * | 1998-12-30 | 2001-05-15 | Lam Research Corporation | Gas injection system for plasma processing |
US6326597B1 (en) | 1999-04-15 | 2001-12-04 | Applied Materials, Inc. | Temperature control system for process chamber |
US6518190B1 (en) | 1999-12-23 | 2003-02-11 | Applied Materials Inc. | Plasma reactor with dry clean apparatus and method |
AU2001237323A1 (en) | 2000-02-01 | 2001-08-14 | E.G.O. Elektro-Geratebau Gmbh | Electric heating element and method for the production thereof |
US7196283B2 (en) * | 2000-03-17 | 2007-03-27 | Applied Materials, Inc. | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface |
US6451161B1 (en) | 2000-04-10 | 2002-09-17 | Nano-Architect Research Corporation | Method and apparatus for generating high-density uniform plasma |
US6414648B1 (en) | 2000-07-06 | 2002-07-02 | Applied Materials, Inc. | Plasma reactor having a symmetric parallel conductor coil antenna |
US6685798B1 (en) | 2000-07-06 | 2004-02-03 | Applied Materials, Inc | Plasma reactor having a symmetrical parallel conductor coil antenna |
US6450117B1 (en) | 2000-08-07 | 2002-09-17 | Applied Materials, Inc. | Directing a flow of gas in a substrate processing chamber |
TW445540B (en) | 2000-08-07 | 2001-07-11 | Nano Architect Res Corp | Bundle concentrating type multi-chamber plasma reacting system |
JP3889918B2 (ja) * | 2000-08-25 | 2007-03-07 | 富士通株式会社 | プラズマエッチング方法、プラズマエッチング装置及びプラズマ処理装置 |
US20020038791A1 (en) | 2000-10-03 | 2002-04-04 | Tomohiro Okumura | Plasma processing method and apparatus |
EP1361604B1 (en) * | 2001-01-22 | 2009-03-18 | Tokyo Electron Limited | Device and method for treatment |
US6899787B2 (en) | 2001-06-29 | 2005-05-31 | Alps Electric Co., Ltd. | Plasma processing apparatus and plasma processing system with reduced feeding loss, and method for stabilizing the apparatus and system |
US6527911B1 (en) | 2001-06-29 | 2003-03-04 | Lam Research Corporation | Configurable plasma volume etch chamber |
US20030070620A1 (en) | 2001-10-15 | 2003-04-17 | Cooperberg David J. | Tunable multi-zone gas injection system |
US7354501B2 (en) * | 2002-05-17 | 2008-04-08 | Applied Materials, Inc. | Upper chamber for high density plasma CVD |
KR100862658B1 (ko) | 2002-11-15 | 2008-10-10 | 삼성전자주식회사 | 반도체 처리 시스템의 가스 주입 장치 |
JP4584565B2 (ja) | 2002-11-26 | 2010-11-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP3881307B2 (ja) | 2002-12-19 | 2007-02-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
KR100585089B1 (ko) | 2003-05-27 | 2006-05-30 | 삼성전자주식회사 | 웨이퍼 가장자리를 처리하기 위한 플라즈마 처리장치,플라즈마 처리장치용 절연판, 플라즈마 처리장치용하부전극, 웨이퍼 가장자리의 플라즈마 처리방법 및반도체소자의 제조방법 |
JP4273932B2 (ja) * | 2003-11-07 | 2009-06-03 | 株式会社島津製作所 | 表面波励起プラズマcvd装置 |
JP2005201686A (ja) | 2004-01-13 | 2005-07-28 | Shimadzu Corp | ガスクロマトグラフ用炎光光度検出器 |
US7722737B2 (en) * | 2004-11-29 | 2010-05-25 | Applied Materials, Inc. | Gas distribution system for improved transient phase deposition |
US20060172542A1 (en) | 2005-01-28 | 2006-08-03 | Applied Materials, Inc. | Method and apparatus to confine plasma and to enhance flow conductance |
KR100854995B1 (ko) | 2005-03-02 | 2008-08-28 | 삼성전자주식회사 | 고밀도 플라즈마 화학 기상 증착 장치 |
US9218944B2 (en) | 2006-10-30 | 2015-12-22 | Applied Materials, Inc. | Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors |
US8017029B2 (en) | 2006-10-30 | 2011-09-13 | Applied Materials, Inc. | Plasma mask etch method of controlling a reactor tunable element in accordance with the output of an array of optical sensors viewing the mask backside |
US7976671B2 (en) | 2006-10-30 | 2011-07-12 | Applied Materials, Inc. | Mask etch plasma reactor with variable process gas distribution |
WO2008088110A1 (en) | 2007-01-15 | 2008-07-24 | Jehara Corporation | Plasma generating apparatus |
US20100101728A1 (en) * | 2007-03-29 | 2010-04-29 | Tokyo Electron Limited | Plasma process apparatus |
US7832354B2 (en) * | 2007-09-05 | 2010-11-16 | Applied Materials, Inc. | Cathode liner with wafer edge gas injection in a plasma reactor chamber |
US7879250B2 (en) * | 2007-09-05 | 2011-02-01 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection |
US8062472B2 (en) | 2007-12-19 | 2011-11-22 | Applied Materials, Inc. | Method of correcting baseline skew by a novel motorized source coil assembly |
US20090159213A1 (en) | 2007-12-19 | 2009-06-25 | Applied Materials, Inc. | Plasma reactor gas distribution plate having a path splitting manifold immersed within a showerhead |
US20090162262A1 (en) | 2007-12-19 | 2009-06-25 | Applied Material, Inc. | Plasma reactor gas distribution plate having path splitting manifold side-by-side with showerhead |
KR20090102257A (ko) | 2008-03-25 | 2009-09-30 | (주)타이닉스 | 유도결합형 플라즈마 에칭장치 |
JP5208554B2 (ja) * | 2008-03-31 | 2013-06-12 | 日本碍子株式会社 | Dlc成膜方法 |
US7987814B2 (en) | 2008-04-07 | 2011-08-02 | Applied Materials, Inc. | Lower liner with integrated flow equalizer and improved conductance |
US20090275206A1 (en) * | 2008-05-05 | 2009-11-05 | Applied Materials, Inc. | Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias |
US20090277587A1 (en) | 2008-05-09 | 2009-11-12 | Applied Materials, Inc. | Flowable dielectric equipment and processes |
US8317970B2 (en) | 2008-06-03 | 2012-11-27 | Applied Materials, Inc. | Ceiling electrode with process gas dispersers housing plural inductive RF power applicators extending into the plasma |
US20110222038A1 (en) * | 2008-09-16 | 2011-09-15 | Tokyo Electron Limited | Substrate processing apparatus and substrate placing table |
JP5056735B2 (ja) * | 2008-12-02 | 2012-10-24 | 東京エレクトロン株式会社 | 成膜装置 |
DE212010000009U1 (de) | 2009-09-10 | 2011-05-26 | LAM RESEARCH CORPORATION (Delaware Corporation), California | Auswechselbare obere Kammerteile einer Plasmaverarbeitungsvorrichtung |
KR101095172B1 (ko) | 2009-10-01 | 2011-12-16 | 주식회사 디엠에스 | 플라즈마 반응 챔버의 사이드 가스 인젝터 |
US8741097B2 (en) | 2009-10-27 | 2014-06-03 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
SG10201501824XA (en) * | 2010-03-12 | 2015-05-28 | Applied Materials Inc | Atomic layer deposition chamber with multi inject |
JP5567392B2 (ja) | 2010-05-25 | 2014-08-06 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5723130B2 (ja) | 2010-09-28 | 2015-05-27 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8486242B2 (en) | 2010-10-18 | 2013-07-16 | Applied Materials, Inc. | Deposition apparatus and methods to reduce deposition asymmetry |
JP5800547B2 (ja) | 2011-03-29 | 2015-10-28 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
TWI659674B (zh) | 2011-10-05 | 2019-05-11 | 應用材料股份有限公司 | 電漿處理設備及蓋組件 |
US8933628B2 (en) | 2011-10-28 | 2015-01-13 | Applied Materials, Inc. | Inductively coupled plasma source with phase control |
US9017481B1 (en) * | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US20130256271A1 (en) | 2012-04-03 | 2013-10-03 | Theodoros Panagopoulos | Methods and apparatuses for controlling plasma in a plasma processing chamber |
US9082591B2 (en) | 2012-04-24 | 2015-07-14 | Applied Materials, Inc. | Three-coil inductively coupled plasma source with individually controlled coil currents from a single RF power generator |
US9111722B2 (en) | 2012-04-24 | 2015-08-18 | Applied Materials, Inc. | Three-coil inductively coupled plasma source with individually controlled coil currents from a single RF power generator |
US9161428B2 (en) | 2012-04-26 | 2015-10-13 | Applied Materials, Inc. | Independent control of RF phases of separate coils of an inductively coupled plasma reactor |
US9082590B2 (en) | 2012-07-20 | 2015-07-14 | Applied Materials, Inc. | Symmetrical inductively coupled plasma source with side RF feeds and RF distribution plates |
US10170279B2 (en) | 2012-07-20 | 2019-01-01 | Applied Materials, Inc. | Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding |
US9449794B2 (en) | 2012-07-20 | 2016-09-20 | Applied Materials, Inc. | Symmetrical inductively coupled plasma source with side RF feeds and spiral coil antenna |
US9928987B2 (en) * | 2012-07-20 | 2018-03-27 | Applied Materials, Inc. | Inductively coupled plasma source with symmetrical RF feed |
US10249470B2 (en) | 2012-07-20 | 2019-04-02 | Applied Materials, Inc. | Symmetrical inductively coupled plasma source with coaxial RF feed and coaxial shielding |
US10131994B2 (en) * | 2012-07-20 | 2018-11-20 | Applied Materials, Inc. | Inductively coupled plasma source with top coil over a ceiling and an independent side coil and independent air flow |
US9536710B2 (en) | 2013-02-25 | 2017-01-03 | Applied Materials, Inc. | Tunable gas delivery assembly with internal diffuser and angular injection |
CN107424901B (zh) * | 2013-03-12 | 2019-06-11 | 应用材料公司 | 具有方位角与径向分布控制的多区域气体注入组件 |
KR102130061B1 (ko) * | 2013-03-15 | 2020-07-03 | 어플라이드 머티어리얼스, 인코포레이티드 | 매우 대칭적인 4-폴드 가스 주입부를 갖는 플라즈마 반응기 |
US10553398B2 (en) | 2013-09-06 | 2020-02-04 | Applied Materials, Inc. | Power deposition control in inductively coupled plasma (ICP) reactors |
US9779953B2 (en) | 2013-09-25 | 2017-10-03 | Applied Materials, Inc. | Electromagnetic dipole for plasma density tuning in a substrate processing chamber |
-
2014
- 2014-02-03 KR KR1020157019669A patent/KR102130061B1/ko active IP Right Grant
- 2014-02-03 CN CN201480003017.0A patent/CN104782234B/zh active Active
- 2014-02-03 WO PCT/US2014/014391 patent/WO2014149200A1/en active Application Filing
- 2014-02-03 US US14/762,224 patent/US10163606B2/en active Active
- 2014-02-03 JP JP2016500195A patent/JP6359627B2/ja active Active
- 2014-02-03 CN CN201710469815.8A patent/CN107221487B/zh active Active
- 2014-02-25 TW TW103106332A patent/TWI617222B/zh active
- 2014-02-25 TW TW109125558A patent/TWI747402B/zh active
- 2014-02-25 TW TW107101637A patent/TWI703900B/zh active
-
2018
- 2018-06-20 JP JP2018116830A patent/JP6634475B2/ja active Active
- 2018-12-19 US US16/226,536 patent/US11244811B2/en active Active
-
2019
- 2019-12-16 JP JP2019226053A patent/JP6937354B2/ja active Active
-
2022
- 2022-02-01 US US17/590,681 patent/US11728141B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009065153A (ja) * | 2007-09-05 | 2009-03-26 | Applied Materials Inc | プラズマリアクタチャンバにおいてウェハ縁端部でガスを注入するカソードライナ |
US20090311872A1 (en) * | 2008-06-13 | 2009-12-17 | Tokyo Electron Limited | Gas ring, apparatus for processing semiconductor substrate, the apparatus including the gas ring, and method of processing semiconductor substrate by using the apparatus |
CN102138204A (zh) * | 2008-09-03 | 2011-07-27 | 东京毅力科创株式会社 | 气体供给部件以及等离子体处理装置 |
JP2013033816A (ja) * | 2011-08-01 | 2013-02-14 | Tokyo Electron Ltd | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
US20190122861A1 (en) | 2019-04-25 |
CN104782234B (zh) | 2017-07-14 |
US11244811B2 (en) | 2022-02-08 |
KR20150129659A (ko) | 2015-11-20 |
WO2014149200A1 (en) | 2014-09-25 |
US20150371826A1 (en) | 2015-12-24 |
KR102130061B1 (ko) | 2020-07-03 |
TWI617222B (zh) | 2018-03-01 |
US10163606B2 (en) | 2018-12-25 |
TW202103520A (zh) | 2021-01-16 |
TW201817287A (zh) | 2018-05-01 |
CN107221487B (zh) | 2019-06-28 |
JP6634475B2 (ja) | 2020-01-22 |
CN107221487A (zh) | 2017-09-29 |
JP6359627B2 (ja) | 2018-07-18 |
TW201436650A (zh) | 2014-09-16 |
JP2018174340A (ja) | 2018-11-08 |
US11728141B2 (en) | 2023-08-15 |
JP6937354B2 (ja) | 2021-09-22 |
US20220157562A1 (en) | 2022-05-19 |
TWI703900B (zh) | 2020-09-01 |
TWI747402B (zh) | 2021-11-21 |
JP2016519845A (ja) | 2016-07-07 |
CN104782234A (zh) | 2015-07-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6937354B2 (ja) | 高対称四重ガス注入によるプラズマリアクタ | |
JP6862505B2 (ja) | 方位角方向及び半径方向分布制御を備えたマルチゾーンガス注入アセンブリ | |
CN109594061B (zh) | 用于半导体处理的气体分配喷头 | |
US20190085467A1 (en) | Plasma Reactor Having Radial Struts for Substrate Support |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191216 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201030 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201201 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20210301 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210406 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210803 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210830 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6937354 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |