TWI692796B - 載置台及電漿處理裝置 - Google Patents

載置台及電漿處理裝置 Download PDF

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Publication number
TWI692796B
TWI692796B TW104143399A TW104143399A TWI692796B TW I692796 B TWI692796 B TW I692796B TW 104143399 A TW104143399 A TW 104143399A TW 104143399 A TW104143399 A TW 104143399A TW I692796 B TWI692796 B TW I692796B
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TW
Taiwan
Prior art keywords
mounting table
insulating member
peripheral surface
plasma
lower electrode
Prior art date
Application number
TW104143399A
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English (en)
Chinese (zh)
Other versions
TW201637065A (zh
Inventor
南雅人
佐佐木芳彦
邊見篤
齊藤均
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW201637065A publication Critical patent/TW201637065A/zh
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Publication of TWI692796B publication Critical patent/TWI692796B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H10P72/70—
    • H10P72/7624—

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
TW104143399A 2014-12-26 2015-12-23 載置台及電漿處理裝置 TWI692796B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014265670A JP6540022B2 (ja) 2014-12-26 2014-12-26 載置台及びプラズマ処理装置
JP2014-265670 2014-12-26

Publications (2)

Publication Number Publication Date
TW201637065A TW201637065A (zh) 2016-10-16
TWI692796B true TWI692796B (zh) 2020-05-01

Family

ID=56296091

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104143399A TWI692796B (zh) 2014-12-26 2015-12-23 載置台及電漿處理裝置

Country Status (4)

Country Link
JP (1) JP6540022B2 (enExample)
KR (1) KR101850193B1 (enExample)
CN (1) CN105742146B (enExample)
TW (1) TWI692796B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106206385A (zh) * 2016-09-27 2016-12-07 上海华力微电子有限公司 一种降低腔体内金属污染含量的多晶硅刻蚀腔及方法
JP6794937B2 (ja) * 2017-06-22 2020-12-02 東京エレクトロン株式会社 プラズマ処理装置
JP6969182B2 (ja) * 2017-07-06 2021-11-24 東京エレクトロン株式会社 プラズマ処理装置
KR102505152B1 (ko) * 2017-12-15 2023-02-28 램 리써치 코포레이션 플라즈마 챔버에서 사용하기 위한 링 구조체들 및 시스템들
JP7055040B2 (ja) * 2018-03-07 2022-04-15 東京エレクトロン株式会社 被処理体の載置装置及び処理装置
JP7090465B2 (ja) * 2018-05-10 2022-06-24 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP7228989B2 (ja) * 2018-11-05 2023-02-27 東京エレクトロン株式会社 載置台、エッジリングの位置決め方法及び基板処理装置
JP7401266B2 (ja) * 2018-12-27 2023-12-19 東京エレクトロン株式会社 基板載置台、及び、基板処理装置
JP7274347B2 (ja) * 2019-05-21 2023-05-16 東京エレクトロン株式会社 プラズマ処理装置
KR102845547B1 (ko) 2019-11-11 2025-08-12 삼성전자주식회사 플라즈마 처리 장비
CN111996590B (zh) * 2020-08-14 2021-10-15 北京北方华创微电子装备有限公司 一种工艺腔室
KR102749194B1 (ko) * 2020-10-15 2024-12-31 도쿄엘렉트론가부시키가이샤 체결 구조체, 플라스마 처리 장치 및 체결 방법
CN113192876B (zh) * 2021-04-30 2024-07-23 北京北方华创微电子装备有限公司 半导体设备及其承载装置
JP7700637B2 (ja) 2021-10-29 2025-07-01 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2025046720A1 (ja) * 2023-08-29 2025-03-06 日本碍子株式会社 半導体製造装置用部材

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201001592A (en) * 2008-03-11 2010-01-01 Tokyo Electron Ltd Loading table structure and processing device
CN203503602U (zh) * 2013-10-18 2014-03-26 中芯国际集成电路制造(北京)有限公司 一种蚀刻结构
TW201423904A (zh) * 2012-12-06 2014-06-16 北京北方微電子基地設備工藝研究中心有限責任公司 靜電卡盤以及等離子體加工設備
TW201428845A (zh) * 2012-09-29 2014-07-16 Advanced Micro Fab Equip Inc 等離子體處理裝置及調節基片邊緣區域製程速率的方法
US20140213055A1 (en) * 2011-08-17 2014-07-31 Tokyo Electron Limited Semiconductor manufacturing device and processing method
JP2014222786A (ja) * 2008-08-15 2014-11-27 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 温度制御式ホットエッジリング組立体

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3957719B2 (ja) * 2004-02-27 2007-08-15 川崎マイクロエレクトロニクス株式会社 プラズマ処理装置およびプラズマ処理方法
JP2005260011A (ja) 2004-03-12 2005-09-22 Hitachi High-Technologies Corp ウエハ処理装置およびウエハ処理方法
JP2006016126A (ja) 2004-06-30 2006-01-19 Hitachi Building Systems Co Ltd エレベーターの制御装置
JP4992630B2 (ja) * 2007-09-19 2012-08-08 東京エレクトロン株式会社 載置台構造及び処理装置
KR101592061B1 (ko) * 2008-10-31 2016-02-04 램 리써치 코포레이션 플라즈마 프로세싱 챔버의 하부 전극 어셈블리
JP6034156B2 (ja) * 2011-12-05 2016-11-30 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5893516B2 (ja) * 2012-06-22 2016-03-23 東京エレクトロン株式会社 被処理体の処理装置及び被処理体の載置台
JP6400273B2 (ja) * 2013-03-11 2018-10-03 新光電気工業株式会社 静電チャック装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201001592A (en) * 2008-03-11 2010-01-01 Tokyo Electron Ltd Loading table structure and processing device
JP2014222786A (ja) * 2008-08-15 2014-11-27 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 温度制御式ホットエッジリング組立体
US20140213055A1 (en) * 2011-08-17 2014-07-31 Tokyo Electron Limited Semiconductor manufacturing device and processing method
TW201428845A (zh) * 2012-09-29 2014-07-16 Advanced Micro Fab Equip Inc 等離子體處理裝置及調節基片邊緣區域製程速率的方法
TW201423904A (zh) * 2012-12-06 2014-06-16 北京北方微電子基地設備工藝研究中心有限責任公司 靜電卡盤以及等離子體加工設備
CN203503602U (zh) * 2013-10-18 2014-03-26 中芯国际集成电路制造(北京)有限公司 一种蚀刻结构

Also Published As

Publication number Publication date
JP6540022B2 (ja) 2019-07-10
KR101850193B1 (ko) 2018-04-18
CN105742146B (zh) 2018-01-05
JP2016127090A (ja) 2016-07-11
KR20160079662A (ko) 2016-07-06
TW201637065A (zh) 2016-10-16
CN105742146A (zh) 2016-07-06

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