KR101850193B1 - 탑재대 및 플라즈마 처리 장치 - Google Patents

탑재대 및 플라즈마 처리 장치 Download PDF

Info

Publication number
KR101850193B1
KR101850193B1 KR1020150178938A KR20150178938A KR101850193B1 KR 101850193 B1 KR101850193 B1 KR 101850193B1 KR 1020150178938 A KR1020150178938 A KR 1020150178938A KR 20150178938 A KR20150178938 A KR 20150178938A KR 101850193 B1 KR101850193 B1 KR 101850193B1
Authority
KR
South Korea
Prior art keywords
insulating member
main body
plasma
table main
mounting table
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020150178938A
Other languages
English (en)
Korean (ko)
Other versions
KR20160079662A (ko
Inventor
마사토 미나미
요시히코 사사키
아츠시 헴미
히토시 사이토
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20160079662A publication Critical patent/KR20160079662A/ko
Application granted granted Critical
Publication of KR101850193B1 publication Critical patent/KR101850193B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020150178938A 2014-12-26 2015-12-15 탑재대 및 플라즈마 처리 장치 Active KR101850193B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-265670 2014-12-26
JP2014265670A JP6540022B2 (ja) 2014-12-26 2014-12-26 載置台及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20160079662A KR20160079662A (ko) 2016-07-06
KR101850193B1 true KR101850193B1 (ko) 2018-04-18

Family

ID=56296091

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150178938A Active KR101850193B1 (ko) 2014-12-26 2015-12-15 탑재대 및 플라즈마 처리 장치

Country Status (4)

Country Link
JP (1) JP6540022B2 (enExample)
KR (1) KR101850193B1 (enExample)
CN (1) CN105742146B (enExample)
TW (1) TWI692796B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11348760B2 (en) 2019-11-11 2022-05-31 Samsung Electronics Co., Ltd. Plasma processing apparatus and method of manufacturing semiconductor device using the same

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106206385A (zh) * 2016-09-27 2016-12-07 上海华力微电子有限公司 一种降低腔体内金属污染含量的多晶硅刻蚀腔及方法
JP6794937B2 (ja) * 2017-06-22 2020-12-02 東京エレクトロン株式会社 プラズマ処理装置
JP6969182B2 (ja) * 2017-07-06 2021-11-24 東京エレクトロン株式会社 プラズマ処理装置
CN116884823A (zh) * 2017-12-15 2023-10-13 朗姆研究公司 等离子体室中使用的环形结构和系统
JP7055040B2 (ja) * 2018-03-07 2022-04-15 東京エレクトロン株式会社 被処理体の載置装置及び処理装置
JP7090465B2 (ja) * 2018-05-10 2022-06-24 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP7228989B2 (ja) * 2018-11-05 2023-02-27 東京エレクトロン株式会社 載置台、エッジリングの位置決め方法及び基板処理装置
JP7401266B2 (ja) * 2018-12-27 2023-12-19 東京エレクトロン株式会社 基板載置台、及び、基板処理装置
JP7274347B2 (ja) * 2019-05-21 2023-05-16 東京エレクトロン株式会社 プラズマ処理装置
CN111996590B (zh) * 2020-08-14 2021-10-15 北京北方华创微电子装备有限公司 一种工艺腔室
TW202232564A (zh) * 2020-10-15 2022-08-16 日商東京威力科創股份有限公司 緊固構造、電漿處理裝置以及緊固方法
CN113192876B (zh) * 2021-04-30 2024-07-23 北京北方华创微电子装备有限公司 半导体设备及其承载装置
JP7700637B2 (ja) 2021-10-29 2025-07-01 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7751079B2 (ja) * 2023-08-29 2025-10-07 日本碍子株式会社 半導体製造装置用部材

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005260011A (ja) 2004-03-12 2005-09-22 Hitachi High-Technologies Corp ウエハ処理装置およびウエハ処理方法
JP2006016126A (ja) 2004-06-30 2006-01-19 Hitachi Building Systems Co Ltd エレベーターの制御装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3957719B2 (ja) * 2004-02-27 2007-08-15 川崎マイクロエレクトロニクス株式会社 プラズマ処理装置およびプラズマ処理方法
JP4992630B2 (ja) * 2007-09-19 2012-08-08 東京エレクトロン株式会社 載置台構造及び処理装置
JP4450106B1 (ja) * 2008-03-11 2010-04-14 東京エレクトロン株式会社 載置台構造及び処理装置
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
KR101624123B1 (ko) * 2008-10-31 2016-05-25 램 리써치 코포레이션 플라즈마 프로세싱 챔버의 하부 전극 어셈블리
JP5948026B2 (ja) * 2011-08-17 2016-07-06 東京エレクトロン株式会社 半導体製造装置及び処理方法
JP6034156B2 (ja) * 2011-12-05 2016-11-30 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5893516B2 (ja) * 2012-06-22 2016-03-23 東京エレクトロン株式会社 被処理体の処理装置及び被処理体の載置台
CN103715049B (zh) * 2012-09-29 2016-05-04 中微半导体设备(上海)有限公司 等离子体处理装置及调节基片边缘区域制程速率的方法
CN103794538B (zh) * 2012-10-31 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 静电卡盘以及等离子体加工设备
JP6400273B2 (ja) * 2013-03-11 2018-10-03 新光電気工業株式会社 静電チャック装置
CN203503602U (zh) * 2013-10-18 2014-03-26 中芯国际集成电路制造(北京)有限公司 一种蚀刻结构

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005260011A (ja) 2004-03-12 2005-09-22 Hitachi High-Technologies Corp ウエハ処理装置およびウエハ処理方法
JP2006016126A (ja) 2004-06-30 2006-01-19 Hitachi Building Systems Co Ltd エレベーターの制御装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11348760B2 (en) 2019-11-11 2022-05-31 Samsung Electronics Co., Ltd. Plasma processing apparatus and method of manufacturing semiconductor device using the same

Also Published As

Publication number Publication date
TW201637065A (zh) 2016-10-16
TWI692796B (zh) 2020-05-01
JP2016127090A (ja) 2016-07-11
CN105742146B (zh) 2018-01-05
CN105742146A (zh) 2016-07-06
KR20160079662A (ko) 2016-07-06
JP6540022B2 (ja) 2019-07-10

Similar Documents

Publication Publication Date Title
KR101850193B1 (ko) 탑재대 및 플라즈마 처리 장치
KR102121655B1 (ko) 플라즈마 처리 장치
TWI778005B (zh) 電漿處理裝置
TWI411034B (zh) A plasma processing apparatus and a method and a focusing ring
KR101672856B1 (ko) 플라즈마 처리 장치
KR102434559B1 (ko) 탑재대 및 플라즈마 처리 장치
CN101990353B (zh) 等离子处理装置和等离子处理方法
TWI633573B (zh) Plasma processing device and method
KR100900585B1 (ko) 포커스링 및 플라즈마 처리 장치
KR101898079B1 (ko) 플라즈마 처리 장치
KR20120074210A (ko) 플라즈마 처리 장치
TW201838028A (zh) 電漿處理裝置
KR100842452B1 (ko) 플라즈마 처리 장치용 전극 어셈블리 및 플라즈마 처리장치
KR20150077347A (ko) 기판 처리 장치, 셔터 기구 및 플라즈마 처리 장치
KR20120100750A (ko) 플라즈마 처리 장치
JP6339866B2 (ja) プラズマ処理装置およびクリーニング方法
JP7101628B2 (ja) プラズマ処理装置および電極構造体
KR20150101391A (ko) 정전척, 배치대, 플라즈마 처리 장치, 및 정전척의 제조방법
KR102876338B1 (ko) 플라스마 처리 장치 및 플라스마 처리 방법
KR20200051505A (ko) 배치대 및 기판 처리 장치
US11201039B2 (en) Mounting apparatus for object to be processed and processing apparatus
CN113725059A (zh) 一种下电极组件，其安装方法及等离子体处理装置
KR20200115228A (ko) 플라즈마 처리 장치
KR100683255B1 (ko) 플라즈마 처리 장치 및 배기 장치
CN114843165A (zh) 一种下电极组件及等离子体处理装置

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20151215

A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20160401

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20151215

Comment text: Patent Application

PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20171113

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20180130

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20180412

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20180412

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20210402

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20220323

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20230322

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20240320

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20250318

Start annual number: 8

End annual number: 8