TWI689071B - 具有改良電容的結構 - Google Patents

具有改良電容的結構 Download PDF

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Publication number
TWI689071B
TWI689071B TW103137386A TW103137386A TWI689071B TW I689071 B TWI689071 B TW I689071B TW 103137386 A TW103137386 A TW 103137386A TW 103137386 A TW103137386 A TW 103137386A TW I689071 B TWI689071 B TW I689071B
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TW
Taiwan
Prior art keywords
metal
layer
insulator
lower electrode
insulating
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TW103137386A
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English (en)
Chinese (zh)
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TW201530727A (zh
Inventor
費德瑞克 佛伊隆
蓋伊 帕拉特
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法商村田整合被動式解決方案公司
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Publication of TW201530727A publication Critical patent/TW201530727A/zh
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    • H10P50/264—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10P14/6324—
    • H10W20/496—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes

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  • Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW103137386A 2013-10-29 2014-10-29 具有改良電容的結構 TWI689071B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1360555A FR3012664B1 (fr) 2013-10-29 2013-10-29 Structure a capacite amelioree
FR1360555 2013-10-29

Publications (2)

Publication Number Publication Date
TW201530727A TW201530727A (zh) 2015-08-01
TWI689071B true TWI689071B (zh) 2020-03-21

Family

ID=50543103

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103137386A TWI689071B (zh) 2013-10-29 2014-10-29 具有改良電容的結構

Country Status (7)

Country Link
US (1) US10497582B2 (enExample)
EP (1) EP3063789B1 (enExample)
JP (1) JP6543622B2 (enExample)
CN (1) CN105706234B (enExample)
FR (1) FR3012664B1 (enExample)
TW (1) TWI689071B (enExample)
WO (1) WO2015063420A1 (enExample)

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US6057571A (en) * 1998-03-31 2000-05-02 Lsi Logic Corporation High aspect ratio, metal-to-metal, linear capacitor for an integrated circuit
US20030213989A1 (en) * 2002-05-15 2003-11-20 Philippe Delpech Trench capacitor in a substrate with two floating electrodes independent from the substrate
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Also Published As

Publication number Publication date
TW201530727A (zh) 2015-08-01
EP3063789B1 (fr) 2023-07-19
US10497582B2 (en) 2019-12-03
US20160268144A1 (en) 2016-09-15
CN105706234A (zh) 2016-06-22
JP6543622B2 (ja) 2019-07-10
CN105706234B (zh) 2018-10-12
FR3012664B1 (fr) 2016-01-01
JP2016535441A (ja) 2016-11-10
EP3063789A1 (fr) 2016-09-07
WO2015063420A1 (fr) 2015-05-07
FR3012664A1 (fr) 2015-05-01

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