TWI686842B - 電漿處理方法及電漿處理裝置 - Google Patents

電漿處理方法及電漿處理裝置 Download PDF

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Publication number
TWI686842B
TWI686842B TW105103086A TW105103086A TWI686842B TW I686842 B TWI686842 B TW I686842B TW 105103086 A TW105103086 A TW 105103086A TW 105103086 A TW105103086 A TW 105103086A TW I686842 B TWI686842 B TW I686842B
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TW
Taiwan
Prior art keywords
gas
plasma
processing container
plasma processing
etching
Prior art date
Application number
TW105103086A
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English (en)
Chinese (zh)
Other versions
TW201707047A (zh
Inventor
和田敏治
Original Assignee
日商東京威力科創股份有限公司
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Publication of TW201707047A publication Critical patent/TW201707047A/zh
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Publication of TWI686842B publication Critical patent/TWI686842B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
TW105103086A 2015-02-03 2016-02-01 電漿處理方法及電漿處理裝置 TWI686842B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015019660A JP6396819B2 (ja) 2015-02-03 2015-02-03 プラズマ処理方法及びプラズマ処理装置
JP2015-019660 2015-02-03

Publications (2)

Publication Number Publication Date
TW201707047A TW201707047A (zh) 2017-02-16
TWI686842B true TWI686842B (zh) 2020-03-01

Family

ID=56554652

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105103086A TWI686842B (zh) 2015-02-03 2016-02-01 電漿處理方法及電漿處理裝置

Country Status (4)

Country Link
US (1) US9583317B2 (enExample)
JP (1) JP6396819B2 (enExample)
KR (1) KR101874681B1 (enExample)
TW (1) TWI686842B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6832757B2 (ja) * 2017-03-14 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置及びシーズニング方法
CN113113280B (zh) * 2020-01-09 2022-06-10 江苏鲁汶仪器有限公司 等离子体处理系统及其开合法拉第组件
JP7341099B2 (ja) * 2020-04-07 2023-09-08 東京エレクトロン株式会社 クリーニング方法およびプラズマ処理装置
TWI836713B (zh) * 2021-11-12 2024-03-21 南韓商Ｔｅｓ股份有限公司 基板處理方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536364A (en) * 1993-06-04 1996-07-16 Nippon Soken, Inc. Process of plasma etching silicon
US6491835B1 (en) * 1999-12-20 2002-12-10 Applied Materials, Inc. Metal mask etching of silicon
US6527968B1 (en) * 2000-03-27 2003-03-04 Applied Materials Inc. Two-stage self-cleaning silicon etch process
US20060166107A1 (en) * 2005-01-27 2006-07-27 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
JP3801366B2 (ja) * 1998-09-17 2006-07-26 株式会社日立製作所 プラズマエッチング処理装置のクリーニング方法
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
JP4503270B2 (ja) * 2002-11-28 2010-07-14 東京エレクトロン株式会社 プラズマ処理容器内部材
US7234222B1 (en) * 2003-09-26 2007-06-26 Lam Research Corporation Methods and apparatus for optimizing the delivery of a set of gases in a plasma processing system
JP4438566B2 (ja) * 2004-08-25 2010-03-24 セイコーエプソン株式会社 電気光学装置の製造方法
JP2006120983A (ja) 2004-10-25 2006-05-11 Hitachi High-Technologies Corp プラズマエッチング方法
JP2009188257A (ja) * 2008-02-07 2009-08-20 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置並びに記憶媒体
US8852685B2 (en) * 2010-04-23 2014-10-07 Lam Research Corporation Coating method for gas delivery system
US9623590B2 (en) * 2012-01-27 2017-04-18 Asahi Kasei E-Materials Corporation Fine concavo-convex structure product, heat-reactive resist material for dry etching, mold manufacturing method and mold

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536364A (en) * 1993-06-04 1996-07-16 Nippon Soken, Inc. Process of plasma etching silicon
US6491835B1 (en) * 1999-12-20 2002-12-10 Applied Materials, Inc. Metal mask etching of silicon
US6527968B1 (en) * 2000-03-27 2003-03-04 Applied Materials Inc. Two-stage self-cleaning silicon etch process
US20060166107A1 (en) * 2005-01-27 2006-07-27 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication

Also Published As

Publication number Publication date
KR20160095630A (ko) 2016-08-11
JP2016143803A (ja) 2016-08-08
KR101874681B1 (ko) 2018-07-04
US20160225585A1 (en) 2016-08-04
JP6396819B2 (ja) 2018-09-26
TW201707047A (zh) 2017-02-16
US9583317B2 (en) 2017-02-28

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