JP6396819B2 - プラズマ処理方法及びプラズマ処理装置 - Google Patents

プラズマ処理方法及びプラズマ処理装置 Download PDF

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Publication number
JP6396819B2
JP6396819B2 JP2015019660A JP2015019660A JP6396819B2 JP 6396819 B2 JP6396819 B2 JP 6396819B2 JP 2015019660 A JP2015019660 A JP 2015019660A JP 2015019660 A JP2015019660 A JP 2015019660A JP 6396819 B2 JP6396819 B2 JP 6396819B2
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Japan
Prior art keywords
gas
plasma
plasma processing
etching
processing container
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JP2015019660A
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English (en)
Japanese (ja)
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JP2016143803A5 (enExample
JP2016143803A (ja
Inventor
敏治 和田
敏治 和田
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2015019660A priority Critical patent/JP6396819B2/ja
Priority to US15/001,549 priority patent/US9583317B2/en
Priority to TW105103086A priority patent/TWI686842B/zh
Priority to KR1020160012713A priority patent/KR101874681B1/ko
Publication of JP2016143803A publication Critical patent/JP2016143803A/ja
Publication of JP2016143803A5 publication Critical patent/JP2016143803A5/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
JP2015019660A 2015-02-03 2015-02-03 プラズマ処理方法及びプラズマ処理装置 Active JP6396819B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2015019660A JP6396819B2 (ja) 2015-02-03 2015-02-03 プラズマ処理方法及びプラズマ処理装置
US15/001,549 US9583317B2 (en) 2015-02-03 2016-01-20 Plasma processing method and plasma processing apparatus
TW105103086A TWI686842B (zh) 2015-02-03 2016-02-01 電漿處理方法及電漿處理裝置
KR1020160012713A KR101874681B1 (ko) 2015-02-03 2016-02-02 플라즈마 처리 방법 및 플라즈마 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015019660A JP6396819B2 (ja) 2015-02-03 2015-02-03 プラズマ処理方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2016143803A JP2016143803A (ja) 2016-08-08
JP2016143803A5 JP2016143803A5 (enExample) 2018-02-22
JP6396819B2 true JP6396819B2 (ja) 2018-09-26

Family

ID=56554652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015019660A Active JP6396819B2 (ja) 2015-02-03 2015-02-03 プラズマ処理方法及びプラズマ処理装置

Country Status (4)

Country Link
US (1) US9583317B2 (enExample)
JP (1) JP6396819B2 (enExample)
KR (1) KR101874681B1 (enExample)
TW (1) TWI686842B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6832757B2 (ja) * 2017-03-14 2021-02-24 東京エレクトロン株式会社 プラズマ処理装置及びシーズニング方法
CN113113280B (zh) * 2020-01-09 2022-06-10 江苏鲁汶仪器有限公司 等离子体处理系统及其开合法拉第组件
JP7341099B2 (ja) * 2020-04-07 2023-09-08 東京エレクトロン株式会社 クリーニング方法およびプラズマ処理装置
TWI836713B (zh) * 2021-11-12 2024-03-21 南韓商Ｔｅｓ股份有限公司 基板處理方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786352A (en) * 1986-09-12 1988-11-22 Benzing Technologies, Inc. Apparatus for in-situ chamber cleaning
US5536364A (en) * 1993-06-04 1996-07-16 Nippon Soken, Inc. Process of plasma etching silicon
JP3801366B2 (ja) * 1998-09-17 2006-07-26 株式会社日立製作所 プラズマエッチング処理装置のクリーニング方法
US6491835B1 (en) * 1999-12-20 2002-12-10 Applied Materials, Inc. Metal mask etching of silicon
US6527968B1 (en) * 2000-03-27 2003-03-04 Applied Materials Inc. Two-stage self-cleaning silicon etch process
US7311797B2 (en) * 2002-06-27 2007-12-25 Lam Research Corporation Productivity enhancing thermal sprayed yttria-containing coating for plasma reactor
JP4503270B2 (ja) * 2002-11-28 2010-07-14 東京エレクトロン株式会社 プラズマ処理容器内部材
US7234222B1 (en) * 2003-09-26 2007-06-26 Lam Research Corporation Methods and apparatus for optimizing the delivery of a set of gases in a plasma processing system
JP4438566B2 (ja) * 2004-08-25 2010-03-24 セイコーエプソン株式会社 電気光学装置の製造方法
JP2006120983A (ja) 2004-10-25 2006-05-11 Hitachi High-Technologies Corp プラズマエッチング方法
US7829243B2 (en) * 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
JP2009188257A (ja) * 2008-02-07 2009-08-20 Tokyo Electron Ltd プラズマエッチング方法及びプラズマエッチング装置並びに記憶媒体
US8852685B2 (en) * 2010-04-23 2014-10-07 Lam Research Corporation Coating method for gas delivery system
US9623590B2 (en) * 2012-01-27 2017-04-18 Asahi Kasei E-Materials Corporation Fine concavo-convex structure product, heat-reactive resist material for dry etching, mold manufacturing method and mold

Also Published As

Publication number Publication date
US20160225585A1 (en) 2016-08-04
TWI686842B (zh) 2020-03-01
US9583317B2 (en) 2017-02-28
TW201707047A (zh) 2017-02-16
KR20160095630A (ko) 2016-08-11
KR101874681B1 (ko) 2018-07-04
JP2016143803A (ja) 2016-08-08

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