TWI685972B - 結晶多奈米片應變通道場效電晶體 - Google Patents

結晶多奈米片應變通道場效電晶體 Download PDF

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Publication number
TWI685972B
TWI685972B TW104118904A TW104118904A TWI685972B TW I685972 B TWI685972 B TW I685972B TW 104118904 A TW104118904 A TW 104118904A TW 104118904 A TW104118904 A TW 104118904A TW I685972 B TWI685972 B TW I685972B
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TW
Taiwan
Prior art keywords
layer
gate
crystalline semiconductor
crystalline
channel region
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TW104118904A
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English (en)
Chinese (zh)
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TW201607039A (zh
Inventor
玻那Ｊ 哦拉都比
羅伯特Ｃ 保文
麥克Ｓ 羅德爾
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南韓商三星電子股份有限公司
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Priority claimed from US14/729,652 external-priority patent/US9570609B2/en
Application filed by 南韓商三星電子股份有限公司 filed Critical 南韓商三星電子股份有限公司
Publication of TW201607039A publication Critical patent/TW201607039A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
TW104118904A 2014-06-11 2015-06-11 結晶多奈米片應變通道場效電晶體 TWI685972B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462010585P 2014-06-11 2014-06-11
US62/010,585 2014-06-11
US14/729,652 2015-06-03
US14/729,652 US9570609B2 (en) 2013-11-01 2015-06-03 Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same

Publications (2)

Publication Number Publication Date
TW201607039A TW201607039A (zh) 2016-02-16
TWI685972B true TWI685972B (zh) 2020-02-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW104118904A TWI685972B (zh) 2014-06-11 2015-06-11 結晶多奈米片應變通道場效電晶體

Country Status (4)

Country Link
KR (1) KR102223971B1 (ko)
CN (1) CN106463543B (ko)
TW (1) TWI685972B (ko)
WO (1) WO2015190852A1 (ko)

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CN106409907B (zh) * 2015-08-03 2021-06-08 三星电子株式会社 用于半导体装置的堆叠件及其形成方法
KR102435521B1 (ko) * 2016-02-29 2022-08-23 삼성전자주식회사 반도체 소자
US9978833B2 (en) * 2016-03-11 2018-05-22 Samsung Electronics Co., Ltd. Methods for varied strain on nano-scale field effect transistor devices
KR102384818B1 (ko) 2016-04-25 2022-04-08 어플라이드 머티어리얼스, 인코포레이티드 수평 게이트 올어라운드 디바이스 나노와이어 에어 갭 스페이서 형성
US9882000B2 (en) * 2016-05-24 2018-01-30 Northrop Grumman Systems Corporation Wrap around gate field effect transistor (WAGFET)
US9905643B1 (en) 2016-08-26 2018-02-27 International Business Machines Corporation Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors
US9853114B1 (en) * 2016-10-24 2017-12-26 Samsung Electronics Co., Ltd. Field effect transistor with stacked nanowire-like channels and methods of manufacturing the same
US10008603B2 (en) * 2016-11-18 2018-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-gate device and method of fabrication thereof
EP3369702A1 (en) * 2017-03-03 2018-09-05 IMEC vzw Internal spacers for nanowire semiconductor devices
KR102400558B1 (ko) * 2017-04-05 2022-05-20 삼성전자주식회사 반도체 소자
US9947804B1 (en) * 2017-07-24 2018-04-17 Globalfoundries Inc. Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure
US10651291B2 (en) 2017-08-18 2020-05-12 Globalfoundries Inc. Inner spacer formation in a nanosheet field-effect transistor
KR102385567B1 (ko) 2017-08-29 2022-04-12 삼성전자주식회사 반도체 장치 및 반도체 장치의 제조 방법
CN207458949U (zh) * 2017-09-26 2018-06-05 京东方科技集团股份有限公司 薄膜晶体管、阵列基板和显示装置
US10566330B2 (en) * 2017-12-11 2020-02-18 Samsung Electronics Co., Ltd. Dielectric separation of partial GAA FETs
US10304833B1 (en) * 2018-02-19 2019-05-28 Globalfoundries Inc. Method of forming complementary nano-sheet/wire transistor devices with same depth contacts
US11101359B2 (en) * 2018-11-28 2021-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Gate-all-around (GAA) method and devices
CN111697072B (zh) 2019-03-13 2023-12-12 联华电子股份有限公司 半导体结构及其制作工艺
WO2020236354A1 (en) * 2019-05-20 2020-11-26 Applied Materials, Inc. Formation of bottom isolation
KR102183131B1 (ko) * 2019-06-24 2020-11-26 포항공과대학교 산학협력단 에피텍셜 구조를 갖는 소스/드레인 영역이 축소된 전계효과 트랜지스터 및 이의 제조방법
CN112582265B (zh) * 2019-09-27 2023-06-02 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN112885901B (zh) * 2021-04-29 2021-07-30 中芯集成电路制造(绍兴)有限公司 高电子迁移率晶体管及其形成方法
WO2022241630A1 (zh) * 2021-05-18 2022-11-24 复旦大学 环栅器件及其源漏制备方法、器件制备方法、电子设备
CN113284806B (zh) * 2021-05-18 2022-04-05 复旦大学 环栅器件及其源漏制备方法、器件制备方法、电子设备
US20230038957A1 (en) * 2021-08-05 2023-02-09 International Business Machines Corporation Complementary field effect transistor devices
WO2023035269A1 (zh) * 2021-09-13 2023-03-16 上海集成电路制造创新中心有限公司 环栅器件及其源漏制备方法、器件制备方法、电子设备
US11837604B2 (en) 2021-09-22 2023-12-05 International Business Machine Corporation Forming stacked nanosheet semiconductor devices with optimal crystalline orientations around devices
US20230086888A1 (en) * 2021-09-23 2023-03-23 International Business Machines Corporation Dual strained semiconductor substrate and patterning
US11705504B2 (en) 2021-12-02 2023-07-18 International Business Machines Corporation Stacked nanosheet transistor with defect free channel

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US20060138548A1 (en) * 2004-12-07 2006-06-29 Thunderbird Technologies, Inc. Strained silicon, gate engineered Fermi-FETs
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Also Published As

Publication number Publication date
WO2015190852A1 (en) 2015-12-17
KR20150142632A (ko) 2015-12-22
KR102223971B1 (ko) 2021-03-10
TW201607039A (zh) 2016-02-16
CN106463543A (zh) 2017-02-22
CN106463543B (zh) 2020-04-07

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