TWI679257B - 樹脂組合物、接著膜、覆蓋膜、積層板、附有樹脂之銅箔及附有樹脂之銅箔積層板 - Google Patents

樹脂組合物、接著膜、覆蓋膜、積層板、附有樹脂之銅箔及附有樹脂之銅箔積層板 Download PDF

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TWI679257B
TWI679257B TW107105189A TW107105189A TWI679257B TW I679257 B TWI679257 B TW I679257B TW 107105189 A TW107105189 A TW 107105189A TW 107105189 A TW107105189 A TW 107105189A TW I679257 B TWI679257 B TW I679257B
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Taiwan
Prior art keywords
resin composition
copper foil
resin
styrene
acid
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TW107105189A
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English (en)
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TW201837141A (zh
Inventor
吉川和男
Kazuo Yoshikawa
田井誠
Makoto Tai
岩野暢行
Nobuyuki Iwano
間山孝之
Takayuki Mayama
Original Assignee
日商有澤製作所股份有限公司
Arisawa Mfg. Co., Ltd.
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Application filed by 日商有澤製作所股份有限公司, Arisawa Mfg. Co., Ltd. filed Critical 日商有澤製作所股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09D153/02Vinyl aromatic monomers and conjugated dienes
    • C09D153/025Vinyl aromatic monomers and conjugated dienes modified
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Abstract

本發明係一種包括特定苯乙烯系聚合物、特定無機填料、及硬化劑之樹脂組合物,其中苯乙烯系聚合物係特定酸改性苯乙烯系聚合物,樹脂組合物於具有25 μm之厚度之膜之形態下,滿足特定條件。

Description

樹脂組合物、接著膜、覆蓋膜、積層板、附有樹脂之銅箔及附有樹脂之銅箔積層板
本發明係關於樹脂組合物、接著膜、覆蓋膜、積層板、附有樹脂之銅箔及附有樹脂之銅箔積層板。
近年,伴隨著軟性印刷配線板(FPC)之傳輸信號之高速化,信號之高頻化迅速發展。伴隨於此,對FPC用材料更加要求高頻區域下之低介電特性(低介電常數、低介電損耗正切)。其中,伴隨著FPC之高密度化,進行3層以上之多層化,或減小盲孔等之直徑。伴隨於此,對用於接著FPC之各種構件之接著劑更加要求優異之低介電特性、及優異之UV雷射加工性。
於日本專利特開2016-135859號公報中揭示有含有聚醯亞胺化合物、改性聚丁二烯、及無機填充劑,且低介電損耗正切特性優異之樹脂組合物。
又,於日本專利特開平6-13495號公報中揭示有對於氟系樹脂調配聚醯亞胺,而賦予UV雷射加工性之低介電樹脂組合物。
於日本專利特開2004-175983號公報中揭示有藉由對於氟系樹脂添加於氧化鈦或氧化鋅之表面塗覆有氧化鋁、二氧化矽、硬脂酸而得之紫外線吸收物質而賦予UV雷射加工性之樹脂組合物。
於日本專利特開2006-63297號公報中揭示有包括對於多孔質物質(二 氧化矽)之孔部填充有聚苯乙烯、聚烯烴等低介電常數化成分之低介電常數化劑、及絕緣性樹脂組合物之低介電常數絕緣性樹脂組合物。
但,專利文獻1及2所揭示之樹脂組合物由於包括聚醯亞胺,故而吸水率較高。因此,該等樹脂組合物於高濕度下,介電損耗正切特性惡化,無法適當地傳播傳輸信號。
專利文獻3所揭示之樹脂組合物中作為樹脂包括氟系樹脂作為主成分,故而於常態下,介電特性優異,同時吸水率亦較低,故而於高濕度下介電損耗正切亦未惡化,可適當地傳播傳輸信號。然而,由於包括氟樹脂作為主成分,故而缺乏密接性。因此,該樹脂組合物作為FPC用材料不實用。
專利文獻4所揭示之樹脂組合物係低介電常數化成分之調配量較少,為46%。又,該樹脂組合物藉由調配環氧樹脂及酚樹脂而形成,故而推測硬化後產生之羥基、未反應酚樹脂之羥基之比率較多。結果,硬化後之組合物之介電常數較佳為2.9,無法對應近年之低介電常數化。又,硬化後之樹脂組合物由於羥基之比率較大,故而具有較高之吸水率,結果,於高濕環境下,介電損耗正切惡化。
因此,本發明之目的在於提供一種高濕度下之介電特性、UV雷射加工性及密接性優異之樹脂組合物。
本發明者等為解決上述問題已進行銳意研究,結果發現,以特定比率包括特定苯乙烯系聚合物、特定無機填料、及硬化劑,且光之吸收率及霧度值在特定範圍內之樹脂組合物可解決上述問題,完成本發明。 即,本發明如下。
〔1〕
一種樹脂組合物,其係包括苯乙烯系聚合物、無機填料、及硬化劑者,其中上述苯乙烯系聚合物係具有羧基之酸改性苯乙烯系聚合物,上述無機填料係二氧化矽及/或氫氧化鋁,上述無機填料之粒徑為1μm以下,上述無機填料之含量相對於上述苯乙烯系聚合物100質量份為20~80質量份,上述樹脂組合物於具有25μm之厚度之膜之形態下,滿足下述式(A)及(B):X≦50…(A)
Y≧40…(B)
(式中,X表示波長355nm之光之吸收率(單位:%),Y表示霧度值(單位:%))。
〔2〕
如〔1〕之樹脂組合物,其中上述酸改性苯乙烯系聚合物係酸改性苯乙烯系彈性體。
〔3〕
如〔2〕之樹脂組合物,其中含於上述酸改性苯乙烯系彈性體之不飽和雙鍵之全部或一部分被氫化。
〔4〕
如〔2〕或〔3〕之樹脂組合物,其中上述酸改性苯乙烯系彈性體係 包括苯乙烯聚合物嵌段、乙烯-丁烯聚合物嵌段之共聚物之酸改性物。
〔5〕
如〔2〕至〔4〕中任一項之樹脂組合物,其中上述酸改性苯乙烯系彈性體係苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物之酸改性物。
〔6〕
如〔1〕至〔5〕中任一項之樹脂組合物,其中上述硬化劑係選自由環氧樹脂、碳二醯亞胺化合物、及
Figure TWI679257B_D0001
唑啉化合物所組成之群中之1種以上之硬化劑。
〔7〕
如〔1〕至〔6〕中任一項之樹脂組合物,其中硬化後之上述樹脂組合物之介電常數未達2.8,硬化後之上述樹脂組合物之介電損耗正切未達0.006。
〔8〕
一種接著膜,其包括如〔1〕至〔7〕中任一項之樹脂組合物。
〔9〕
如〔8〕之接著膜,其中硬化後之上述接著膜具有2~200μm之厚度。
〔10〕
一種覆蓋膜,其具有積層有包括如〔1〕至〔9〕中任一項之樹脂組合物之接著層及電氣絕緣層之積層結構。
〔11〕
一種積層板,其係具有積層有包括如〔1〕至〔7〕中任一項之樹脂組合物之接著層、電氣絕緣層、及銅箔之積層結構者, 其中上述接著層具有第一面、及與上述第一面對向之第二面,於上述接著層之第一面積層有上述電氣絕緣層,於上述接著層之第二面積層有上述銅箔。
〔12〕
一種附有樹脂之銅箔,其具有積層有包括如〔1〕至〔7〕中任一項之樹脂組合物之接著層及銅箔之積層結構。
〔13〕
一種附有樹脂之銅箔積層板,其係具有積層有包括如〔1〕至〔7〕中任一項之樹脂組合物之接著層、電氣絕緣層、及銅箔之積層結構者,其中上述電氣絕緣層具有第一面、及與上述第一面對向之第二面,於上述電氣絕緣層之第一面積層有上述接著層,於上述電氣絕緣層之第二面積層有上述銅箔。
〔14〕
如〔13〕之積層板,其中對上述積層板進行下述(1)及(2)之處理時,形成於切斷部位之水平方向之切斷面的凹陷之水平方向之最大長度為5μm以下:(1)藉由去除上述銅箔而形成去除部位;(2)藉由向上述去除部位照射波長355nm之雷射光而於上述去除部位之垂直方向形成切斷部位。
本發明可提供高濕度下之介電特性、密接性及UV雷射加工性優異之樹脂組合物。
圖1係實施例之雷射加工性之評價方法之概略說明圖。
以下,詳細地揭示用於實施本發明之形態(以下,稱為「本實施形態」)。再者,本發明未限定於以下之實施形態,可於其主旨之範圍內進行各種變形而實施。
本實施形態之樹脂組合物係包括苯乙烯系聚合物、無機填料、及硬化劑之樹脂組合物,苯乙烯系聚合物係具有羧基之酸改性苯乙烯系聚合物,無機填料係二氧化矽及/或氫氧化鋁,無機填料之粒徑為1μm以下,無機填料之含量相對於苯乙烯系聚合物100質量份為20~80質量份,樹脂組合物於具有25μm之厚度之膜之形態下,滿足下述式(A)及(B):X≦50…(A)
Y≧40…(B)
(式中,X表示波長355nm之光之吸收率(單位:%),Y表示霧度值(單位:%))。
〔酸改性苯乙烯系聚合物〕
本實施形態之樹脂組合物包括具有羧基之酸改性苯乙烯系聚合物。於本說明書中,「酸改性苯乙烯系聚合物」係具有來自芳香族乙烯基類(例如為苯乙烯、α-甲基苯乙烯,較佳為苯乙烯)之結構單元,且具有羧基者。於本說明書中,「羧基」係亦包含「酸酐基」之概念。
作為酸改性苯乙烯系聚合物,可列舉:包括來自芳香族乙烯基類之單元及來自不飽和羧酸之單元(例如丙烯酸、甲基丙烯酸等不飽和羧酸、反丁烯二酸、順丁烯二酸、伊康酸等不飽和二羧酸等)之共聚物、包括來自芳香族乙烯基之單元及來自不飽和羧酸酐(例如順丁烯二酸酐、伊康酸 酐等)之單元之共聚物。該等共聚物進而可包括來自可與芳香族乙烯基及不飽和羧酸或不飽和羧酸酐共聚之單體(例如α-烯烴、共軛二烯、乙烯酯類、乙烯醚類、丙烯酸或甲基丙烯酸之酯類、鹵化乙烯類等)之單元。
作為酸改性苯乙烯系聚合物之具體例,可列舉:酸改性苯乙烯系彈性體、酸改性ABS樹脂(丙烯腈-丁二烯-苯乙烯樹脂經順丁烯二酸酐等酸改性而得之樹脂)、酸改性AS樹脂(丙烯腈-苯乙烯樹脂經順丁烯二酸酐等酸改性而得之樹脂)。該等之中,就低介電常數及低介電損耗正切之觀點而言,較佳為酸改性苯乙烯系彈性體。再者,於本說明書中,「苯乙烯系彈性體」與苯乙烯-伸烷基共聚物同義。
作為酸改性苯乙烯系彈性體,雖未特別限定,但例如可列舉:包括芳香族乙烯基聚合物嵌段(例如苯乙烯聚合物嵌段)及共軛二烯嵌段(例如丁二烯嵌段、異戊二烯嵌段等)之共聚物之酸改性物等。
含於酸改性苯乙烯系彈性體之不飽和雙鍵之全部或一部分,就低介電常數及低介電損耗正切之觀點而言,較佳為被氫化。藉此,具有可降低來自不飽和雙鍵之π電子之存在對介電特性之影響之趨勢。作為氫化率為100%之酸改性苯乙烯系彈性體,例如可列舉:(i)包括芳香族乙烯基聚合物嵌段(例如苯乙烯聚合物嵌段)、乙烯-丁烯聚合物嵌段之共聚物之酸改性物(例如苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物之酸改性物);(ii)包括芳香族乙烯基聚合物嵌段(例如苯乙烯聚合物嵌段)、乙烯-丙烯聚合物嵌段之共聚物之酸改性物;(iii)包括芳香族乙烯基聚合物嵌段(例如苯乙烯聚合物嵌段)、異丁烯聚合物嵌段之共聚物之酸改性物。該等之中,就柔軟性之觀點而言,較佳為(i)包括芳香族乙烯基聚合物嵌段(較佳為苯乙烯聚合物嵌段)、乙烯-丁烯聚合物嵌段之共聚物之酸改性物,更佳為苯乙烯-乙 烯-丁烯-苯乙烯嵌段共聚物之酸改性物。
於本實施形態之樹脂組合物中,酸改性苯乙烯系聚合物可單獨使用1種,或組合2種以上使用。
酸改性苯乙烯系聚合物中來自苯乙烯之單元之比率較佳為10~65重量%,更佳為15~60重量%,進而較佳為20~55重量%。於來自苯乙烯之單元之比率為65重量%以下之情形時,柔軟性變更好,因此具有作為FPC之軟性更加提高之趨勢。另一方面,於來自苯乙烯之單元之比率為10重量%以上之情形時,使樹脂組合物硬化而用作FPC材料之接著劑時,不易變得過軟,即使使其彎曲接著劑亦難以移動,因此有可保持電路而不易發生電路斷線之趨勢。
酸改性苯乙烯系聚合物於分子鏈中(主要為側鏈)包括羧基。酸改性苯乙烯系聚合物藉由包含羧基而與環氧化合物或碳二醯亞胺化合物等硬化劑反應,形成立體網狀結構,其結果,耐熱性提高。酸改性苯乙烯系聚合物之羧基當量較佳為11000g/eq以下,更佳為8000g/eq以下,進而較佳為6000g/eq以下。於羧基當量為11000g/eq以下之情形時,具有交聯密度更加提高,耐焊料回焊性更加優異之趨勢。再者,羧基當量可依據JIS K 1557-5而測定。具體而言,例如藉由以下方法測定。即,添加2-丙醇200mL、水100mL及溴瑞香草酚藍之甲醇溶液7滴,以0.02mol/L氫氧化鉀之甲醇溶液滴定至變為綠色,於其中溶解試樣50g。將其以0.02mol/L氫氧化鉀之甲醇溶液進行滴定,藉由以下計算公式計算出羧基當量。
羧基當量(g/當量)=(56100×3(g/試樣採取量)/((1.122×(滴定量mL)×0.02(滴定液濃度))
〔無機填料〕
樹脂組合物包括具有1μm以下之粒徑之無機填料(以下,亦稱為「特定無機填料」)。酸改性苯乙烯系聚合物通常對UV-YAG雷射波長之355nm之光不易吸收,UV雷射加工性較差。與此相對,樹脂組合物藉由含有特定無機填料可提高UV雷射加工性。樹脂組合物若含有無機填料,則雖無法提高波長355nm之光之吸收率,但可提高霧度值(漫透射率/全光線透過率×100(%))。其中,霧度值較大則意味著漫透射率較大,故而樹脂組合物內光充分擴散透射。結果,UV雷射與苯乙烯系聚合物於更廣範圍接觸,而促進苯乙烯系聚合物之去除(消融)。
作為無機填料,就低介電常數及低介電損耗正切之觀點而言,較佳為二氧化矽及/或氫氧化鋁。
無機填料之粒徑為1μm以下,較佳為0.8μm以下。若無機填料之粒徑超過1μm,則無機填料之粒徑相當於UV-YAG雷射波長355nm之3倍左右之長度,故而有霧度值降低、雷射加工性不足之虞。
無機填料之粒徑可藉由依據JIS Z8825 2013之雷射繞射式粒度分佈進行測定。具體而言,例如,向分散溶劑添加無機填料,漿化後,慢慢添加於雷射繞射式流動分佈裝置之測定槽,以透光度成為基準之方式調整濃度。其次,由裝置之自動計測進行測定。
無機填料之含量相對於苯乙烯系聚合物100質量份為20~80質量份,較佳為30質量份~70質量份,更佳為35~65質量份。無機填料之含量為20質量份以上,則霧度值未降低,雷射加工性變好。另一方面,無機填料之含量為80質量份以下,則介電常數及介電損耗正切變低。
無機填料之介電常數雖未特別限定,但較佳為10以下,更佳為8以下,進而較佳為5以下。
〔硬化劑〕
樹脂組合物包括硬化劑。硬化劑藉由與含於苯乙烯系聚合物之羧基反應,增加交聯密度,提高密接力及耐焊料回焊性。
作為硬化劑,若可與羧基反應則無特別限定,例如可列舉:環氧樹脂、碳二醯亞胺化合物、胺化合物、
Figure TWI679257B_D0002
唑啉化合物、異氰酸酯化合物等。該等之中,就反應性之觀點而言,較佳為環氧樹脂、碳二醯亞胺化合物、
Figure TWI679257B_D0003
唑啉化合物,更佳為環氧樹脂。
作為環氧樹脂,可列舉:雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、酚醛清漆型環氧樹脂、聯苯型環氧樹脂、環戊二烯型環氧樹脂、縮水甘油胺型環氧樹脂、縮合多環型環氧樹脂等。
環氧樹脂之環氧當量較佳為500g/eq以下,更佳為300g/eq以下。於環氧當量為500g/eq以下之情形時,可減少含於樹脂組合物之環氧含量,故而具有介電常數及介電損耗正切變得更好之趨勢。再者,環氧樹脂之環氧當量可依據JIS K7236 2001而測定。
相對於含於樹脂組合物中之苯乙烯系聚合物之羧基1當量的硬化劑之官能基之當量較佳為0.3~3.0,更佳為0.5~2.5,進而較佳為0.7~2.0。於相對於羧基1當量之官能基之當量為0.3以上之情形時,具有反應性更加提高,耐焊料回焊性變更好之趨勢。另一方面,於相對於羧基1當量之官能基之當量為3.0以下之情形時,環氧樹脂未過量,故而具有絕緣可靠性更優異,介電常數及介電損耗正切變更好之趨勢。
本實施形態之樹脂組合物可包括除上述各成分以外之其他添加劑。作為其他添加劑,例如使用:受阻酚系、磷系、硫系等抗氧化劑;耐光穩定劑、耐候穩定劑、熱穩定劑等穩定劑;磷酸三烯丙基酯、磷酸酯等阻燃 劑;陰離子系、陽離子系、非離子系界面活性劑;塑化劑;潤滑劑等各種公知之添加劑。添加劑之調配量可於無損於本發明之效果之範圍內適宜地調整。
〔樹脂組合物之特性〕
樹脂組合物於具有25μm之厚度之膜之形態下,滿足下述式(A)及(B)。
X≦50…(A)
Y≧40…(B)
式中,X表示波長355nm之光之吸收率(單位:%),Y表示霧度值(單位:%)。
霧度值較佳為50%以上,更佳為60%以上,進而較佳為70%以上。於霧度未達40%之情形時,UV雷射無法於寬範圍與苯乙烯系聚合物接觸,故而有UV雷射加工性較差之虞。再者,光之吸收率及霧度值可藉由實施例所揭示之方法計算出。
本實施形態之樹脂組合物之硬化物係介電特性優異。硬化後之樹脂組合物之介電常數較佳為未達2.8,更佳為2.75以下,進而較佳為2.70以下。又,硬化後之樹脂組合物之介電損耗正切較佳為未達0.006,更佳為0.005以下,進而較佳為0.004以下。
本實施形態之樹脂組合物成為接著膜等形狀後,例如,可用作軟性印刷配線板(FPC)之各種構件之接著劑。以下,說明接著膜及各種構件。
〔接著膜〕
本實施形態之接著膜包括本實施形態之樹脂組合物。接著膜例如可藉由於脫模膜上塗佈樹脂組合物而製作。更具體而言,於至少於單面實施 有脫模處理之PET(聚對苯二甲酸乙二酯)膜、PP(聚丙烯)膜、PE(聚乙烯)膜等之脫模處理面上塗佈樹脂組合物後,藉由一定條件(溫度:80~180℃、時間:2~10分鐘)乾燥至成為半硬化狀態(以下,亦稱為B階段)而獲得接著膜。塗膜之厚度根據用途而不同,但為10~100μm左右即可。塗佈方法未特別限定,例如可列舉:缺角輪塗佈機、模嘴塗佈機、凹版塗佈機等之方法。再者,完全硬化狀態(C階段)之接著膜可藉由對B階段之接著膜於一定硬化條件(溫度:160~180℃、壓力:2~3MPa、時間:30~60分鐘)下進行處理而獲得。
硬化後之接著膜之厚度較佳為2~200μm,更佳為5~150μm,進而較佳為10~100μm。接著膜之厚度為200μm以下,則具有可更加抑制製造時之發泡之趨勢,接著膜之厚度為2μm以上,則可更加保持加工表面之平滑性,例如,具有電路嵌入性、密接性、彎折性等特性變更好之趨勢。
〔覆蓋膜〕
本實施形態之覆蓋膜具有積層有包括本實施形態之樹脂組合物之接著層及電氣絕緣層之結構。
電氣絕緣層於將覆蓋膜用作FPC之構件之情形時,具有用於保護形成於配線板上之電路等之作用。作為構成電氣絕緣層之材料,未特別限定,例如可列舉選自由聚醯亞胺、液晶聚合物、聚苯硫醚、對排聚苯乙烯、聚對苯二甲酸乙二酯、聚萘二甲酸乙二酯、聚碳酸酯、聚對苯二甲酸丁二酯、聚醚醚酮、及氟系樹脂所組成之群中之1種以上之樹脂。
作為電氣絕緣層之氟系樹脂,未特別限定,例如可列舉選自由聚四氟乙烯、聚四氟乙烯-全氟烷基乙烯基醚共聚物、四氟乙烯-六氟丙烯共聚 物、二氟乙烯-三氟乙烯共聚物、四氟乙烯-乙烯共聚物、聚氯三氟乙烯、及聚偏二氟乙烯所組成之群中之1種以上。
〔積層板〕
本實施形態之積層板係具有積層有包括本實施形態之樹脂組合物之接著層、電氣絕緣層、及銅箔之積層結構之積層板,接著層具有第一面及與第一面對向之第二面,於接著層之第一面積層電氣絕緣層,於接著層之第二面積層銅箔。本實施形態之積層板於接著層包括本實施形態之樹脂組合物,故而高濕度下之介電特性、UV雷射加工性及密接性優異。
又,本實施形態之積層板係積層有包括本實施形態之樹脂組合物之接著層、電氣絕緣層、及銅箔之積層板,亦可為具有於電氣絕緣層之雙面積層接著層,且於與接著層之積層有電氣絕緣層之面相反側之面積層有銅箔的結構之雙面銅箔積層板。雙面銅箔積層板具有於單面銅箔積層板之電氣絕緣層之與積層有接著層及銅箔之面相反側之面進而設有接著層及銅箔的結構。
積層板中,接著層之硬化狀態與覆蓋膜不同。具體而言,含於覆蓋膜之接著層之硬化狀態為B階段,與此相對,含於積層板之接著層之硬化狀態為C階段。覆蓋膜如後述,貼合於形成有電路之積層板後,進一步使接著層硬化至C階段。
含於積層板之接著層之厚度較佳為2~50μm,更佳為5~25μm。若接著層之厚度為2μm以上,則具有電氣絕緣層與被黏附體之間之接著性變更好之趨勢,若為50μm以下,則具有彎折性(彎曲性)變更好之趨勢。
本實施形態之積層板係UV雷射加工性優異,故而可抑制伴隨照射UV雷射光之無用的削除等。因此,本實施形態之積層板係對積層板進行 下述(1)及(2)之處理時,形成於切斷部位之水平方向之切斷面的凹陷之水平方向之最大長度例如為5μm以下,較佳為3μm以下。
(1)藉由去除上述銅箔而形成去除部位。
(2)藉由向上述去除部位照射波長355nm之雷射光而於上述去除部位之垂直方向形成切斷部位。
本實施形態之附有樹脂之銅箔具有積層有包括本實施形態之樹脂組合物之接著層及銅箔之積層結構。本實施形態之附有樹脂之銅箔於接著層包括本實施形態之樹脂組合物,故而高濕度下之介電特性、UV雷射加工性及密接性優異。
〔附有樹脂之銅箔積層板〕
本實施形態之附有樹脂之銅箔係具有積層有包括本實施形態之樹脂組合物之接著層、電氣絕緣層、及銅箔之積層結構的附有樹脂之銅箔積層板,且電氣絕緣層具有第一面及與第一面對向之第二面,於電氣絕緣層之第一面積層接著層,於電氣絕緣層之第二面積層銅箔。本實施形態之附有樹脂之銅箔積層板於接著層包括本實施形態之樹脂組合物,故而高濕度下之介電特性、UV雷射加工性及密接性優異。
上述各種構件於露出接著層之面可進一步積層分離膜。作為形成分離膜之樹脂,未特別限定,例如可列舉選自由聚對苯二甲酸乙二酯樹脂、聚萘二甲酸乙二酯樹脂、聚丙烯樹脂、聚乙烯樹脂、及聚對苯二甲酸丁二酯樹脂所組成之群中之1種以上之樹脂,其中,就降低製造成本之觀點而言,較佳為選自由聚丙烯樹脂、聚乙烯樹脂、及聚對苯二甲酸乙二酯樹脂所組成之群中之1種以上之樹脂。使用具有分離膜之各種構件時,剝離該分離膜後,將接著層面貼附於被黏附體。
〔軟性印刷配線板〕
軟性印刷配線板包括本實施形態之覆蓋膜及積層板,於含於積層板之銅箔形成電路後,藉由使覆蓋膜之接著層貼合於積層板之電路形成面而獲得。
〔製造方法〕
作為本實施形態之各種構件之製造方法,未特別限定,可使用公知之方法。本實施形態之覆蓋膜例如可藉由包括以下之(a)步驟之方法而製造。
(a)於電氣絕緣層之單面塗佈形成接著層的樹脂組合物之清漆,乾燥至B階段之步驟。
作為本實施形態之單面銅箔積層板之製造方法,例如,除上述(a)步驟外,進一步進行以下之(b)步驟。
(b)於設有上述(a)步驟所獲得之覆蓋膜之接著層的面,熱壓銅箔,使接著層乾燥至C階段之步驟。
作為本實施形態之雙面銅箔積層板之製造方法,可藉由於上述單面銅箔積層板之電氣絕緣層之另一面,以與上述相同之方法積層接著層及銅箔而製造。
作為用於清漆之溶劑,例如可列舉:丙酮、甲苯、甲基乙基酮、甲基異丁基酮、環己酮、丙二醇單甲醚、二甲基乙醯胺、乙酸丁酯、乙酸乙酯等。溶劑之調配量相對於酸改性苯乙烯系聚合物100質量份,可為300~500質量份左右。
作為塗佈清漆之方法,根據塗佈厚度,可適宜地採用缺角輪塗佈 機、模嘴塗佈機、凹版塗佈機等。清漆之乾燥可藉由線上乾燥器等而實施,此時之乾燥條件可藉由樹脂或添加劑之種類及量等而適宜地調整。
本實施形態之附有樹脂之銅箔具有積層有包括本實施形態之樹脂組合物之接著層、銅箔之結構。又,本實施形態之附有樹脂之銅箔積層板具有積層有包括上述低介電樹脂組合物之接著層、電氣絕緣層、及銅箔之結構,於上述電氣絕緣層之第一面積層上述接著層,於第二面積層上述銅箔。附有樹脂之銅箔及附有樹脂之銅箔積層板可依據上述覆蓋層或銅箔積層板之製造方法而製造。
本說明書中之各物性之測定及評價,除非特別明記,否則可依據以下實施例所揭示之方法而進行。
[實施例]
以下,藉由實施例及比較例進一步具體地說明本發明,但本發明未僅限於該等實施例。
用於各實施例及比較例之各成分及材料如下。
〔苯乙烯系聚合物〕
(1)苯乙烯系聚合物A
Tuftec M1913旭化成化學公司製造
氫化苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物,羧基當量5400g/eq,來自苯乙烯之單元之比率為30重量%。
(2)苯乙烯系聚合物B
Tuftec H1041旭化成化學公司製造
氫化苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物,無羧基,來自苯乙烯之 單元之比率為30重量%。
(3)苯乙烯系聚合物C
ASAPRENE T-432旭化成化學公司製造
苯乙烯-丁二烯-苯乙烯嵌段共聚物,無羧基,來自苯乙烯之單元之比率為30重量%
〔無機填料〕
(1)二氧化矽A
SC2050-MB Admatechs公司製造、粒徑0.5μm。
(2)氫氧化鋁A
Higilite H-43昭和電工公司製造、粒徑0.75μm。
(3)二氧化矽B
VX-SR龍森公司製造、粒徑2.5μm。
(4)氫氧化鋁B
B-303 ALMORIX公司製造、粒徑4.3μm。
(5)氧化鈦
Ti-Pure R-960 Chemours公司製造、粒徑0.5μm。
(6)滑石
D-600日本滑石公司製造、粒徑0.6μm。
(7)有機磷系填料
OP930 Clariant公司製造、粒徑3.5μm。
〔硬化劑〕
(1)環氧樹脂
jER YX8800三菱化學公司製造、縮合多環型環氧樹脂、環氧當量180g/eq。
(2)碳二醯亞胺化合物
Carbodilite V-05日清紡化學公司製造、碳二醯亞胺當量262g/eq。
(3)
Figure TWI679257B_D0004
唑啉化合物
1,3-PBO三國製藥工業公司製造、
Figure TWI679257B_D0005
唑啉當量108g/eq。
於實施例及比較例中,各物性之測定及評價藉由以下方法進行。
〔剝離強度〕
(1)樣本之製作程序
於厚度38μm之實施有單面脫模處理之PET膜之脫模面側塗佈樹脂組合物,以乾燥後之厚度成為25μm之方式,於80~180℃、1~30分鐘之條件下,乾燥至成為半硬化狀態(B階段),藉此而形成接著層(接著膜)。
於接著層之一面層壓具有25μm之厚度之聚醯亞胺膜,剝離PET膜。其次,於與接著層之一面相對之另一面,貼合壓延銅箔(JX日礦日石金屬公司製造,品名BHY-22B-T,厚度為35μm)之光澤面,於160℃、3.0MPa(每1cm2之壓力)、60分鐘之條件下加熱加壓,獲得樣本(積層板)。
(2)測定方法
將(1)所製作之樣本切為寬度10mm×長度100mm,使用島津製作所製造之Autograph AGS-500,用以下測定條件測定90°方向(與積層板之面方向正交之方向)之剝離強度。測定條件係去除基材膜,測試速度設為50mm/min。評價基準如下。
A:剝離強度為7N/cm以上
B:剝離強度為5N/cm以上且未達7N/cm
C:剝離強度未達5N/cm。
〔耐焊料回焊性〕
(1)樣本之製作程序
〔剝離強度〕(1)藉由樣本之製作程序而製作積層板。
(2)用於評價之樣本
使用上述積層板、及將上述積層板於40℃、90%RH之條件下保管96小時而得之濕熱處理過之積層板之2種積層板。並且,將各積層板切為50mm×50mm之大小,將其等作為樣本。以下,將前者稱為未處理樣本,將後者稱為處理過之樣本。
(3)測定方法
於以峰值溫度成為260℃之方式設定之焊料回焊爐將未處理樣本及處理過之樣本搬送至爐內。此時,搬送速度為300mm/min,以峰值溫度之暴露時間成為10秒之方式進行調整。以目視確認通過回焊爐後之各樣本有無鼓出及剝離,藉此評價耐焊料回焊性。評價基準如下。
A:鼓出及剝離均未發現。
C:發現鼓出及剝離之至少一者。
〔絕緣可靠性〕
(1)樣本之製作
於厚度38μm之實施有單面脫模處理之PET膜之脫模面側塗佈樹脂組合物,以乾燥後之厚度成為25μm之方式,於80~180℃、1~30分鐘之條件下乾燥至成為半硬化狀態(B階段),藉此形成接著層(接著膜)。
於接著層之一面,層壓具有25μm之厚度之聚醯亞胺膜而獲得樣本。
(2)被黏附體之製作
作為被黏附體,使用如下者:於在電解銅箔(JX日礦日石金屬公司製造,厚度為18μm)之粗糙表面形成有厚度25μm之聚醯亞胺層的2層基板之銅箔光澤面,形成有圖案之配線寬度(L)/間距(S)=50/50之電路圖案。
(3)評價方法
自樣本剝離脫模之PET膜,將與接著層之一面相對之另一面、及上述被黏附體之電路形成面藉由加壓成形(加熱溫度160℃、加熱時間1小時、壓力3MPa)而進行貼合。並且,於85℃、85%RH、DC50V之條件下以目視確認1000小時後有無短路,藉此評價所貼合之樣本之絕緣可靠性。評價基準如下。
A:1000小時後亦無短路。
C:到達1000小時前短路。
〔介電常數及介電損耗正切〕
(1)樣本之製作
於厚度38μm之實施有單面脫模處理之PET膜之脫模面側,塗佈樹脂組合物,以乾燥後之厚度成為25μm之方式,於80~180℃、1~30分鐘之條件下乾燥至成為半硬化狀態(B階段),藉此形成接著層(接著膜)。
以接著層之一面(接著層露出之面)與38μm之實施有單面脫模處理之PET膜之脫模面相對之方式進行層壓,進行加壓成形(加熱溫度160℃、加熱時間1小時、壓力3MPa),得到樣本。使用時兩側一起剝離脫模之PET膜而進行測定。
(2)測定方法
使用Agilent Technologies公司製造之Network Analyzer N5230A SPDR(共振器法),於23℃之環境下,以頻率5GHz之條件進行測定,如下進行評價。又,使用於40℃、90%RH之條件下保管96小時之濕熱處理過之樣本進行相同之評價。評價基準如下。
(介電常數)
A:未達2.7
B:2.7以上且未達2.8
C:2.8以上。
(介電損耗正切)
A:未達0.004
B:0.004以上且未達0.006
C:0.006以上。
〔吸水率〕
(1)樣本之製作
藉由〔介電常數及介電損耗正切〕(1)樣本之製作順序得到樣本。使用時剝離脫模之PET膜而進行測定。
(2)測定方法
於105℃、0.5小時之條件下乾燥樣本,冷卻至室溫後之樣本質量設為初始值(m0)。將該樣本於23℃之純水中浸漬24小時,測定之後之質量(md),根據初始值及浸漬後之質量之變化使用下述式測定吸水率。
(md-m0)×100/m0=吸水率(%)
A:吸水率為0.5%以下
B:吸水率超過0.5%且未達1.0%
C:吸水率為1.0%以上。
〔雷射加工性〕
(1)樣本之製作
於厚度38μm之實施有單面脫模處理之PET膜之脫模面側,塗佈樹脂組合物,以乾燥後之厚度成為25μm之方式,於80~180℃、1~30分鐘之條件下乾燥至成為半硬化狀態(B階段),藉此製成接著層(接著膜)。
作為被黏附體之單面銅箔積層板及雙面銅箔積層板分別使用有澤製作所製造之PNS H0512RAH(聚醯亞胺12.5μm、壓延銅箔12μm)、及PKRW 1012EDR(聚醯亞胺25μm、電解銅箔12μm)。
以接著層之一面與單面銅箔積層板之聚醯亞胺層相對之方式,於接著層層壓單面銅箔積層板後,剝離脫模膜,將與接著層之一面相對之另一面、及雙面銅箔積層板進行貼合,於160℃、3.0MPa(每1cm2之壓力)、60分鐘之條件下進行加熱加壓,獲得樣本。
(2)測定方法
使用ESI公司製造之UV-YAG雷射Model5330,對單面銅箔積層板之銅箔部進行共形蝕刻後,進行盲孔加工直至接著膜與雙面銅箔積層板之交界(參照圖1)。用光學顯微鏡觀察盲孔部之剖面,測定接著層之削除長度(即形成於切斷部位之水平方向之切斷面的凹陷之水平方向之最大長度)。
〔吸收率及霧度〕
(1)樣本之製作
藉由〔介電常數及介電損耗正切〕(1)樣本之製作順序而獲得樣本。使用時剝離脫模之PET膜而進行測定。
(2)測定方法
使用Hitachi High-TechScience公司製造之分光光度計U-4100測定355nm之光之全光線透過率、反射率、及漫透射率。吸收率及霧度值藉由以下計算公式計算出。
吸收率(%)=100-全光線透過率(%)-反射率(%)
霧度值(%)=漫透射率/全光線透過率×100(%)
〔實施例1〕
相對於氫化苯乙烯系彈性體(Tuftec M1913)100質量份,添加環氧樹脂(jER YX8800)6.1質量份、粒徑0.5μm之二氧化矽(SC2050-MB)50質量份、作為溶解溶劑之甲苯400質量份進行攪拌,製成接著劑清漆(樹脂組合物)。
〔實施例2~8、比較例1~9〕
除如表1及2所示般改變各成分之種類及含量以外,藉由與實施例1相同之方法,獲得接著劑清漆(樹脂組合物)。
使用各實施例1~8及比較例1~9之接著劑清漆(樹脂組合物)進行各種評價。評價結果示於表1及2。
根據上述實施例之結果,可知本實施形態之樹脂組合物係高濕度下之介電特性優異,密接性及UV雷射加工性亦優異。
本申請係基於2017年2月20日申請之日本專利申請(日本專利特願2017-029450)及2018年1月22日申請之日本專利申請(日本專利特願2018-008192)者,其等之內容係作為參照而被引入於此處。
[產業上之可利用性]
本發明之低介電樹脂組合物具有作為用於軟性印刷配線板之接著膜等的產業上之可利用性。

Claims (14)

  1. 一種樹脂組合物,其係包括苯乙烯系聚合物、無機填料、及硬化劑者,其中 上述苯乙烯系聚合物係具有羧基之酸改性苯乙烯系聚合物, 上述無機填料係二氧化矽及/或氫氧化鋁, 上述無機填料之粒徑為1 μm以下, 上述無機填料之含量相對於上述苯乙烯系聚合物100質量份為20~80質量份, 上述樹脂組合物於具有25 μm之厚度之膜之形態下,滿足下述式(A)及(B): X≦50…(A) Y≧40…(B) (式中,X表示波長355 nm之光之吸收率(單位:%),Y表示霧度值(單位:%))。
  2. 如請求項1之樹脂組合物,其中上述酸改性苯乙烯系聚合物係酸改性苯乙烯系彈性體。
  3. 如請求項2之樹脂組合物,其中含於上述酸改性苯乙烯系彈性體之不飽和雙鍵之全部或一部分被氫化。
  4. 如請求項2或3之樹脂組合物,其中上述酸改性苯乙烯系彈性體係包括苯乙烯聚合物嵌段、乙烯-丁烯聚合物嵌段的共聚物之酸改性物。
  5. 如請求項2或3之樹脂組合物,其中上述酸改性苯乙烯系彈性體係苯乙烯-乙烯-丁烯-苯乙烯嵌段共聚物之酸改性物。
  6. 如請求項1至3中任一項之樹脂組合物,其中上述硬化劑係選自由環氧樹脂、碳二醯亞胺化合物、及㗁唑啉化合物所組成之群中之1種以上之硬化劑。
  7. 如請求項1至3中任一項之樹脂組合物,其中硬化後之上述樹脂組合物之介電常數未達2.8,硬化後之上述樹脂組合物之介電損耗正切未達0.006。
  8. 一種接著膜,其包括如請求項1至7中任一項之樹脂組合物。
  9. 如請求項8之接著膜,其中硬化後之上述接著膜具有2~200 μm之厚度。
  10. 一種覆蓋膜,其具有積層有包括如請求項1至7中任一項之樹脂組合物之接著層及電氣絕緣層之積層結構。
  11. 一種積層板,其係具有積層有包括如請求項1至7中任一項之樹脂組合物之接著層、電氣絕緣層、及銅箔之積層結構者,其中 上述接著層具有第一面、及與上述第一面對向之第二面, 於上述接著層之第一面積層有上述電氣絕緣層,於上述接著層之第二面積層有上述銅箔。
  12. 一種附有樹脂之銅箔,其具有積層有包括如請求項1至7中任一項之樹脂組合物之接著層及銅箔之積層結構。
  13. 一種附有樹脂之銅箔積層板,其係具有積層有包括如請求項1至7中任一項之樹脂組合物之接著層、電氣絕緣層、及銅箔之積層結構者,其中 上述電氣絕緣層具有第一面、及與上述第一面對向之第二面, 於上述電氣絕緣層之第一面積層有上述接著層,於上述電氣絕緣層之第二面積層有上述銅箔。
  14. 如請求項13之積層板,其中對上述積層板進行下述(1)及(2)之處理時,形成於切斷部位之水平方向之切斷面的凹陷之水平方向之最大長度為5 μm以下: (1)藉由去除上述銅箔而形成去除部位; (2)藉由向上述去除部位照射波長355 nm之雷射光而於上述去除部位之垂直方向形成切斷部位。
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