TWI677526B - 用於定向自組裝應用之含矽嵌段共聚物 - Google Patents

用於定向自組裝應用之含矽嵌段共聚物 Download PDF

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Publication number
TWI677526B
TWI677526B TW104135931A TW104135931A TWI677526B TW I677526 B TWI677526 B TW I677526B TW 104135931 A TW104135931 A TW 104135931A TW 104135931 A TW104135931 A TW 104135931A TW I677526 B TWI677526 B TW I677526B
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TW
Taiwan
Prior art keywords
block copolymer
alkyl
hydrogen
repeating units
composition
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TW104135931A
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English (en)
Chinese (zh)
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TW201619278A (zh
Inventor
恒鵬 吳
Hengpeng Wu
建 殷
Jian Yin
觀陽 林
Guanyang Lin
金志勳
Jihoon Kim
馬格瑞塔 保尼斯庫
Margareta Paunescu
Original Assignee
盧森堡商Ａｚ電子材料（盧森堡）股份有限公司
AZ ELECTRONIC MATERIALS (LUXEMBOURG) S. a. r. l.
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Publication of TW201619278A publication Critical patent/TW201619278A/zh
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
    • C08F293/005—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0209—Multistage baking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
    • B05D3/141—Plasma treatment
    • B05D3/145—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
    • C08F297/02—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C08F299/022—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations
    • C08F299/024—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations the unsaturation being in acrylic or methacrylic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C08F299/04—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polyesters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/42—Introducing metal atoms or metal-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L53/005—Modified block copolymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Graft Or Block Polymers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
TW104135931A 2014-10-30 2015-10-30 用於定向自組裝應用之含矽嵌段共聚物 TWI677526B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/527,939 US9505945B2 (en) 2014-10-30 2014-10-30 Silicon containing block copolymers for direct self-assembly application
US14/527,939 2014-10-30

Publications (2)

Publication Number Publication Date
TW201619278A TW201619278A (zh) 2016-06-01
TWI677526B true TWI677526B (zh) 2019-11-21

Family

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Family Applications (1)

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TW104135931A TWI677526B (zh) 2014-10-30 2015-10-30 用於定向自組裝應用之含矽嵌段共聚物

Country Status (9)

Country Link
US (1) US9505945B2 (enExample)
EP (1) EP3212714B1 (enExample)
JP (2) JP6782695B2 (enExample)
KR (1) KR102226229B1 (enExample)
CN (1) CN107075057B (enExample)
IL (1) IL250995A0 (enExample)
SG (1) SG11201701937RA (enExample)
TW (1) TWI677526B (enExample)
WO (1) WO2016066684A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9738765B2 (en) * 2015-02-19 2017-08-22 International Business Machines Corporation Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers
JP6819950B2 (ja) * 2016-11-30 2021-01-27 エルジー・ケム・リミテッド ブロック共重合体
KR102096272B1 (ko) * 2016-11-30 2020-04-02 주식회사 엘지화학 블록 공중합체
CN110114377B (zh) 2016-12-21 2022-06-03 默克专利有限公司 嵌段共聚物自组装的新组合物和方法
JP7076701B2 (ja) * 2018-03-05 2022-05-30 東京応化工業株式会社 ブロック共重合体及びその製造方法、ならびに相分離構造を含む構造体の製造方法
FR3089982A1 (fr) * 2018-12-12 2020-06-19 Arkema France Procédé de fabrication d’un copolymère à blocs contenant du silicium
US20240219829A1 (en) 2021-05-18 2024-07-04 Merck Patent Gmbh Hydrophobic crosslinkable pinning underlayers with improved dry etch capabilities for patterning directed self-assembly of ps-b-pmma type block copolymers

Citations (2)

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US6653048B2 (en) * 2000-02-28 2003-11-25 International Business Machines Corp. High silicon content monomers and polymers suitable for 193 nm bilayer resists
WO2013146600A1 (ja) * 2012-03-27 2013-10-03 日産化学工業株式会社 自己組織化膜の下層膜形成組成物

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JPH02500152A (ja) * 1987-05-21 1990-01-18 ヒューズ・エアクラフト・カンパニー シリコン含有ネガレジスト材料および基体のパターン化用処理方法
US5985524A (en) * 1997-03-28 1999-11-16 International Business Machines Incorporated Process for using bilayer photoresist
US6210856B1 (en) * 1999-01-27 2001-04-03 International Business Machines Corporation Resist composition and process of forming a patterned resist layer on a substrate
JP3963623B2 (ja) * 1999-12-09 2007-08-22 富士フイルム株式会社 ポジ型フォトレジスト組成物
US6291696B2 (en) * 2000-01-06 2001-09-18 Shin-Etsu Chemical Co., Ltd. Preparation of tris (trimethylsilyl) silylethyl esters
JP3858968B2 (ja) * 2000-01-06 2006-12-20 信越化学工業株式会社 トリス（トリメチルシリル）シリルエチルエステルの製造方法
JP3781960B2 (ja) 2000-09-29 2006-06-07 信越化学工業株式会社 反射防止膜材料およびパターン形成方法
JP3912512B2 (ja) * 2002-07-02 2007-05-09 信越化学工業株式会社 珪素含有高分子化合物、レジスト材料及びパターン形成方法
JP4040392B2 (ja) 2002-08-22 2008-01-30 富士フイルム株式会社 ポジ型フォトレジスト組成物
US8696918B2 (en) 2010-05-05 2014-04-15 Micron Technology, Inc. Methods of utilizing block copolymer to form patterns
US8691925B2 (en) * 2011-09-23 2014-04-08 Az Electronic Materials (Luxembourg) S.A.R.L. Compositions of neutral layer for directed self assembly block copolymers and processes thereof
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JP5745439B2 (ja) * 2012-02-17 2015-07-08 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたパターン形成方法、レジスト膜及び電子デバイスの製造方法
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US6653048B2 (en) * 2000-02-28 2003-11-25 International Business Machines Corp. High silicon content monomers and polymers suitable for 193 nm bilayer resists
WO2013146600A1 (ja) * 2012-03-27 2013-10-03 日産化学工業株式会社 自己組織化膜の下層膜形成組成物

Also Published As

Publication number Publication date
EP3212714A1 (en) 2017-09-06
TW201619278A (zh) 2016-06-01
JP2018502936A (ja) 2018-02-01
IL250995A0 (en) 2017-04-30
SG11201701937RA (en) 2017-04-27
KR20170081206A (ko) 2017-07-11
JP6810782B2 (ja) 2021-01-06
CN107075057B (zh) 2019-02-15
US9505945B2 (en) 2016-11-29
WO2016066684A1 (en) 2016-05-06
US20160122579A1 (en) 2016-05-05
JP2020033566A (ja) 2020-03-05
EP3212714B1 (en) 2019-03-06
JP6782695B2 (ja) 2020-11-11
CN107075057A (zh) 2017-08-18
KR102226229B1 (ko) 2021-03-10

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