SG11201701937RA - Silicon containing block copolymers for direct self-assembly application - Google Patents

Silicon containing block copolymers for direct self-assembly application

Info

Publication number
SG11201701937RA
SG11201701937RA SG11201701937RA SG11201701937RA SG11201701937RA SG 11201701937R A SG11201701937R A SG 11201701937RA SG 11201701937R A SG11201701937R A SG 11201701937RA SG 11201701937R A SG11201701937R A SG 11201701937RA SG 11201701937R A SG11201701937R A SG 11201701937RA
Authority
SG
Singapore
Prior art keywords
block copolymers
silicon containing
containing block
assembly application
direct self
Prior art date
Application number
SG11201701937RA
Inventor
Hengpeng Wu
Jian Yin
Guanyang Lin
Jihoon Kim
Margareta Paunescu
Original Assignee
Az Electronic Materials Luxembourg S À R L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Luxembourg S À R L filed Critical Az Electronic Materials Luxembourg S À R L
Publication of SG11201701937RA publication Critical patent/SG11201701937RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F8/00—Chemical modification by after-treatment
    • C08F8/42—Introducing metal atoms or metal-containing groups
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0209—Multistage baking
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
    • B05D3/141—Plasma treatment
    • B05D3/145—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
    • C08F293/005—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
    • C08F297/02—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C08F299/022—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations
    • C08F299/024—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations the unsaturation being in acrylic or methacrylic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
    • C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
    • C08F299/04—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polyesters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L53/005—Modified block copolymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
SG11201701937RA 2014-10-30 2015-10-28 Silicon containing block copolymers for direct self-assembly application SG11201701937RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/527,939 US9505945B2 (en) 2014-10-30 2014-10-30 Silicon containing block copolymers for direct self-assembly application
PCT/EP2015/074980 WO2016066684A1 (en) 2014-10-30 2015-10-28 Silicon containing block copolymers for direct self-assembly application

Publications (1)

Publication Number Publication Date
SG11201701937RA true SG11201701937RA (en) 2017-04-27

Family

ID=54541022

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201701937RA SG11201701937RA (en) 2014-10-30 2015-10-28 Silicon containing block copolymers for direct self-assembly application

Country Status (9)

Country Link
US (1) US9505945B2 (en)
EP (1) EP3212714B1 (en)
JP (2) JP6782695B2 (en)
KR (1) KR102226229B1 (en)
CN (1) CN107075057B (en)
IL (1) IL250995A0 (en)
SG (1) SG11201701937RA (en)
TW (1) TWI677526B (en)
WO (1) WO2016066684A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9738765B2 (en) * 2015-02-19 2017-08-22 International Business Machines Corporation Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers
WO2018101730A1 (en) * 2016-11-30 2018-06-07 주식회사 엘지화학 Block copolymer
KR102096272B1 (en) * 2016-11-30 2020-04-02 주식회사 엘지화학 Block copolymer
SG10202108825RA (en) 2016-12-21 2021-09-29 Ridgefield Acquisition Novel compositions and processes for self-assembly of block copolymers
JP7076701B2 (en) * 2018-03-05 2022-05-30 東京応化工業株式会社 A block copolymer and a method for producing the same, and a method for producing a structure including a phase-separated structure.
FR3089982A1 (en) * 2018-12-12 2020-06-19 Arkema France Method for manufacturing a block copolymer containing silicon
WO2022243216A1 (en) 2021-05-18 2022-11-24 Merck Patent Gmbh Hydrophobic crosslinkable pinning underlayers with improved dry etch capabilities for patterning directed self-assembly of ps-b-pmma type block copolymers

Family Cites Families (19)

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JPH02500152A (en) * 1987-05-21 1990-01-18 ヒューズ・エアクラフト・カンパニー Silicon-containing negative resist materials and processing methods for patterning substrates
US5985524A (en) * 1997-03-28 1999-11-16 International Business Machines Incorporated Process for using bilayer photoresist
US6210856B1 (en) * 1999-01-27 2001-04-03 International Business Machines Corporation Resist composition and process of forming a patterned resist layer on a substrate
JP3963623B2 (en) * 1999-12-09 2007-08-22 富士フイルム株式会社 Positive photoresist composition
JP3858968B2 (en) * 2000-01-06 2006-12-20 信越化学工業株式会社 Method for producing tris (trimethylsilyl) silylethyl ester
US6291696B2 (en) * 2000-01-06 2001-09-18 Shin-Etsu Chemical Co., Ltd. Preparation of tris (trimethylsilyl) silylethyl esters
US6444408B1 (en) * 2000-02-28 2002-09-03 International Business Machines Corporation High silicon content monomers and polymers suitable for 193 nm bilayer resists
JP3781960B2 (en) 2000-09-29 2006-06-07 信越化学工業株式会社 Antireflection film material and pattern forming method
JP3912512B2 (en) * 2002-07-02 2007-05-09 信越化学工業株式会社 Silicon-containing polymer compound, resist material, and pattern forming method
JP4040392B2 (en) 2002-08-22 2008-01-30 富士フイルム株式会社 Positive photoresist composition
US8696918B2 (en) 2010-05-05 2014-04-15 Micron Technology, Inc. Methods of utilizing block copolymer to form patterns
US8691925B2 (en) * 2011-09-23 2014-04-08 Az Electronic Materials (Luxembourg) S.A.R.L. Compositions of neutral layer for directed self assembly block copolymers and processes thereof
US8710150B2 (en) 2012-02-10 2014-04-29 Rohm And Haas Electronic Materials Llc Blended block copolymer composition
US8961918B2 (en) 2012-02-10 2015-02-24 Rohm And Haas Electronic Materials Llc Thermal annealing process
US8697810B2 (en) 2012-02-10 2014-04-15 Rohm And Haas Electronic Materials Llc Block copolymer and methods relating thereto
JP5745439B2 (en) * 2012-02-17 2015-07-08 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, pattern formation method using the same, resist film, and electronic device manufacturing method
KR102126787B1 (en) * 2012-03-27 2020-06-25 닛산 가가쿠 가부시키가이샤 Underlayer film forming composition for self-assembled films
US8822619B1 (en) * 2013-02-08 2014-09-02 Rohm And Haas Electronic Materials Llc Directed self assembly copolymer composition and related methods
JP5956370B2 (en) * 2013-03-12 2016-07-27 信越化学工業株式会社 Silicon-containing underlayer film material and pattern forming method

Also Published As

Publication number Publication date
EP3212714B1 (en) 2019-03-06
JP6810782B2 (en) 2021-01-06
TWI677526B (en) 2019-11-21
EP3212714A1 (en) 2017-09-06
TW201619278A (en) 2016-06-01
JP6782695B2 (en) 2020-11-11
KR102226229B1 (en) 2021-03-10
JP2018502936A (en) 2018-02-01
KR20170081206A (en) 2017-07-11
CN107075057A (en) 2017-08-18
JP2020033566A (en) 2020-03-05
US20160122579A1 (en) 2016-05-05
US9505945B2 (en) 2016-11-29
IL250995A0 (en) 2017-04-30
CN107075057B (en) 2019-02-15
WO2016066684A1 (en) 2016-05-06

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