CN107075057A - 用于定向自组装应用的含硅嵌段共聚物 - Google Patents
用于定向自组装应用的含硅嵌段共聚物 Download PDFInfo
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- CN107075057A CN107075057A CN201580057241.2A CN201580057241A CN107075057A CN 107075057 A CN107075057 A CN 107075057A CN 201580057241 A CN201580057241 A CN 201580057241A CN 107075057 A CN107075057 A CN 107075057A
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- alkyl
- block copolymer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0209—Multistage baking
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
- B05D3/141—Plasma treatment
- B05D3/145—After-treatment
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F293/00—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule
- C08F293/005—Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule using free radical "living" or "controlled" polymerisation, e.g. using a complexing agent
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F297/00—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer
- C08F297/02—Macromolecular compounds obtained by successively polymerising different monomer systems using a catalyst of the ionic or coordination type without deactivating the intermediate polymer using a catalyst of the anionic type
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
- C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
- C08F299/022—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations
- C08F299/024—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polycondensates with side or terminal unsaturations the unsaturation being in acrylic or methacrylic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F299/00—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers
- C08F299/02—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates
- C08F299/04—Macromolecular compounds obtained by interreacting polymers involving only carbon-to-carbon unsaturated bond reactions, in the absence of non-macromolecular monomers from unsaturated polycondensates from polyesters
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F8/00—Chemical modification by after-treatment
- C08F8/42—Introducing metal atoms or metal-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L53/00—Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
- C08L53/005—Modified block copolymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D153/00—Coating compositions based on block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Coating compositions based on derivatives of such polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Graft Or Block Polymers (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
Description
Claims (15)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/527,939 US9505945B2 (en) | 2014-10-30 | 2014-10-30 | Silicon containing block copolymers for direct self-assembly application |
US14/527,939 | 2014-10-30 | ||
PCT/EP2015/074980 WO2016066684A1 (en) | 2014-10-30 | 2015-10-28 | Silicon containing block copolymers for direct self-assembly application |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107075057A true CN107075057A (zh) | 2017-08-18 |
CN107075057B CN107075057B (zh) | 2019-02-15 |
Family
ID=54541022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580057241.2A Active CN107075057B (zh) | 2014-10-30 | 2015-10-28 | 用于定向自组装应用的含硅嵌段共聚物 |
Country Status (9)
Country | Link |
---|---|
US (1) | US9505945B2 (zh) |
EP (1) | EP3212714B1 (zh) |
JP (2) | JP6782695B2 (zh) |
KR (1) | KR102226229B1 (zh) |
CN (1) | CN107075057B (zh) |
IL (1) | IL250995A0 (zh) |
SG (1) | SG11201701937RA (zh) |
TW (1) | TWI677526B (zh) |
WO (1) | WO2016066684A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9738765B2 (en) * | 2015-02-19 | 2017-08-22 | International Business Machines Corporation | Hybrid topographical and chemical pre-patterns for directed self-assembly of block copolymers |
US11155666B2 (en) * | 2016-11-30 | 2021-10-26 | Lg Chem, Ltd. | Block copolymer |
KR102096272B1 (ko) * | 2016-11-30 | 2020-04-02 | 주식회사 엘지화학 | 블록 공중합체 |
CN110114377B (zh) | 2016-12-21 | 2022-06-03 | 默克专利有限公司 | 嵌段共聚物自组装的新组合物和方法 |
JP7076701B2 (ja) * | 2018-03-05 | 2022-05-30 | 東京応化工業株式会社 | ブロック共重合体及びその製造方法、ならびに相分離構造を含む構造体の製造方法 |
FR3089982A1 (fr) * | 2018-12-12 | 2020-06-19 | Arkema France | Procédé de fabrication d’un copolymère à blocs contenant du silicium |
JP2024519063A (ja) | 2021-05-18 | 2024-05-08 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | Ps-b-pmmaタイプブロックコポリマーの誘導自己集合体をパターン化するための改善されたドライエッチング能を有する疎水性の架橋可能ピン止め下層 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1988009527A2 (en) * | 1987-05-21 | 1988-12-01 | Hughes Aircraft Company | Silicon-containing negative resist material, and process for its use in patterning substrates |
US20040006191A1 (en) * | 2002-07-02 | 2004-01-08 | Takanobu Takeda | Silicon-containing polymer, resist composition and patterning process |
US20110272381A1 (en) * | 2010-05-05 | 2011-11-10 | Dan Millward | Methods Of Utilizing Block Copolymer To Form Patterns |
CN103289285A (zh) * | 2012-02-10 | 2013-09-11 | 罗门哈斯电子材料有限公司 | 嵌段共聚物和与其相关的方法 |
CN103797066A (zh) * | 2011-09-23 | 2014-05-14 | Az电子材料美国公司 | 用于定向自组装嵌段共聚物的中性层组合物及其方法 |
CN103980648A (zh) * | 2013-02-08 | 2014-08-13 | 罗门哈斯电子材料有限公司 | 一种导向自组装共聚物组合物及其相关方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5985524A (en) * | 1997-03-28 | 1999-11-16 | International Business Machines Incorporated | Process for using bilayer photoresist |
US6210856B1 (en) * | 1999-01-27 | 2001-04-03 | International Business Machines Corporation | Resist composition and process of forming a patterned resist layer on a substrate |
JP3963623B2 (ja) * | 1999-12-09 | 2007-08-22 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
JP3858968B2 (ja) * | 2000-01-06 | 2006-12-20 | 信越化学工業株式会社 | トリス(トリメチルシリル)シリルエチルエステルの製造方法 |
KR100399208B1 (ko) * | 2000-01-06 | 2003-09-26 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 트리스(트리메틸실릴)실릴에틸 에스테르의 제조 방법 |
US6444408B1 (en) * | 2000-02-28 | 2002-09-03 | International Business Machines Corporation | High silicon content monomers and polymers suitable for 193 nm bilayer resists |
JP3781960B2 (ja) | 2000-09-29 | 2006-06-07 | 信越化学工業株式会社 | 反射防止膜材料およびパターン形成方法 |
JP4040392B2 (ja) | 2002-08-22 | 2008-01-30 | 富士フイルム株式会社 | ポジ型フォトレジスト組成物 |
US8961918B2 (en) | 2012-02-10 | 2015-02-24 | Rohm And Haas Electronic Materials Llc | Thermal annealing process |
US8710150B2 (en) | 2012-02-10 | 2014-04-29 | Rohm And Haas Electronic Materials Llc | Blended block copolymer composition |
JP5745439B2 (ja) * | 2012-02-17 | 2015-07-08 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びに、これを用いたパターン形成方法、レジスト膜及び電子デバイスの製造方法 |
JP6070964B2 (ja) * | 2012-03-27 | 2017-02-01 | 日産化学工業株式会社 | 自己組織化膜の下層膜形成組成物 |
JP5956370B2 (ja) | 2013-03-12 | 2016-07-27 | 信越化学工業株式会社 | 珪素含有下層膜材料及びパターン形成方法 |
-
2014
- 2014-10-30 US US14/527,939 patent/US9505945B2/en active Active
-
2015
- 2015-10-28 CN CN201580057241.2A patent/CN107075057B/zh active Active
- 2015-10-28 SG SG11201701937RA patent/SG11201701937RA/en unknown
- 2015-10-28 KR KR1020177014791A patent/KR102226229B1/ko active IP Right Grant
- 2015-10-28 WO PCT/EP2015/074980 patent/WO2016066684A1/en active Application Filing
- 2015-10-28 JP JP2017523324A patent/JP6782695B2/ja active Active
- 2015-10-28 EP EP15794100.6A patent/EP3212714B1/en active Active
- 2015-10-30 TW TW104135931A patent/TWI677526B/zh active
-
2017
- 2017-03-07 IL IL250995A patent/IL250995A0/en unknown
-
2019
- 2019-10-23 JP JP2019192457A patent/JP6810782B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1988009527A2 (en) * | 1987-05-21 | 1988-12-01 | Hughes Aircraft Company | Silicon-containing negative resist material, and process for its use in patterning substrates |
US20040006191A1 (en) * | 2002-07-02 | 2004-01-08 | Takanobu Takeda | Silicon-containing polymer, resist composition and patterning process |
US20110272381A1 (en) * | 2010-05-05 | 2011-11-10 | Dan Millward | Methods Of Utilizing Block Copolymer To Form Patterns |
CN103797066A (zh) * | 2011-09-23 | 2014-05-14 | Az电子材料美国公司 | 用于定向自组装嵌段共聚物的中性层组合物及其方法 |
CN103289285A (zh) * | 2012-02-10 | 2013-09-11 | 罗门哈斯电子材料有限公司 | 嵌段共聚物和与其相关的方法 |
CN103980648A (zh) * | 2013-02-08 | 2014-08-13 | 罗门哈斯电子材料有限公司 | 一种导向自组装共聚物组合物及其相关方法 |
Also Published As
Publication number | Publication date |
---|---|
KR102226229B1 (ko) | 2021-03-10 |
JP2018502936A (ja) | 2018-02-01 |
JP6810782B2 (ja) | 2021-01-06 |
SG11201701937RA (en) | 2017-04-27 |
KR20170081206A (ko) | 2017-07-11 |
JP6782695B2 (ja) | 2020-11-11 |
CN107075057B (zh) | 2019-02-15 |
JP2020033566A (ja) | 2020-03-05 |
TW201619278A (zh) | 2016-06-01 |
US9505945B2 (en) | 2016-11-29 |
TWI677526B (zh) | 2019-11-21 |
EP3212714A1 (en) | 2017-09-06 |
US20160122579A1 (en) | 2016-05-05 |
WO2016066684A1 (en) | 2016-05-06 |
IL250995A0 (en) | 2017-04-30 |
EP3212714B1 (en) | 2019-03-06 |
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Effective date of registration: 20210108 Address after: Darmstadt Patentee after: AZ Electronic Materials Co.,Ltd. Address before: Lu Senbaolusenbao Patentee before: AZ Electronic Materials Co.,Ltd. Effective date of registration: 20210108 Address after: Lu Senbaolusenbao Patentee after: AZ Electronic Materials Co.,Ltd. Address before: Lu Senbaolusenbao Patentee before: Wisdom Buy Effective date of registration: 20210108 Address after: Lu Senbaolusenbao Patentee after: Wisdom Buy Address before: Lu Senbaolusenbao Patentee before: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L. Effective date of registration: 20210108 Address after: Darmstadt Patentee after: MERCK PATENT GmbH Address before: Darmstadt Patentee before: AZ Electronic Materials Co.,Ltd. |